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TWI350001B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TWI350001B
TWI350001B TW096122236A TW96122236A TWI350001B TW I350001 B TWI350001 B TW I350001B TW 096122236 A TW096122236 A TW 096122236A TW 96122236 A TW96122236 A TW 96122236A TW I350001 B TWI350001 B TW I350001B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
TW096122236A
Other languages
Chinese (zh)
Other versions
TW200814313A (en
Inventor
Yoshinobu Kono
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Publication of TW200814313A publication Critical patent/TW200814313A/en
Application granted granted Critical
Publication of TWI350001B publication Critical patent/TWI350001B/en

Links

TW096122236A 2006-08-09 2007-06-21 Semiconductor device TWI350001B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006216950A JP2008042073A (en) 2006-08-09 2006-08-09 Semiconductor device

Publications (2)

Publication Number Publication Date
TW200814313A TW200814313A (en) 2008-03-16
TWI350001B true TWI350001B (en) 2011-10-01

Family

ID=39085504

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096122236A TWI350001B (en) 2006-08-09 2007-06-21 Semiconductor device

Country Status (3)

Country Link
JP (1) JP2008042073A (en)
CN (1) CN100585872C (en)
TW (1) TWI350001B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5587622B2 (en) * 2010-01-27 2014-09-10 ルネサスエレクトロニクス株式会社 Reverse conduction type IGBT
JP5526811B2 (en) 2010-01-29 2014-06-18 富士電機株式会社 Reverse conducting insulated gate bipolar transistor
JP2014103376A (en) 2012-09-24 2014-06-05 Toshiba Corp Semiconductor device
US9461116B2 (en) 2012-12-06 2016-10-04 Institute of Microelectronics, Chinese Academy of Sciences Method of formation of a TI-IGBT
CN103594467B (en) * 2013-11-27 2016-06-22 杭州士兰集成电路有限公司 Power semiconductor of integrated fly-wheel diode and forming method thereof
CN103872053B (en) * 2013-12-17 2017-05-17 上海联星电子有限公司 TI-IGBT device
CN115763554A (en) * 2022-11-10 2023-03-07 安徽瑞迪微电子有限公司 Micro-trench gate IGBT device and manufacturing method thereof
CN115985941B (en) * 2023-03-21 2023-06-23 上海埃积半导体有限公司 Longitudinal RC-IGBT structure and preparation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62109365A (en) * 1985-11-07 1987-05-20 Fuji Electric Co Ltd semiconductor equipment
JPH053205A (en) * 1991-01-25 1993-01-08 Fuji Electric Co Ltd Insulated gate bipolar transistor
JPH11204789A (en) * 1998-01-08 1999-07-30 Sanken Electric Co Ltd Insulating gate type transistor
JP4566470B2 (en) * 2001-07-17 2010-10-20 三菱電機株式会社 Insulated gate bipolar transistor

Also Published As

Publication number Publication date
CN101123270A (en) 2008-02-13
JP2008042073A (en) 2008-02-21
CN100585872C (en) 2010-01-27
TW200814313A (en) 2008-03-16

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