TWI239994B - Process for ashing organic materials from substrates - Google Patents

Process for ashing organic materials from substrates Download PDF

Info

Publication number: TWI239994B
Authority: TW; Taiwan
Prior art keywords: gas; ashing; plasma; sulfur trioxide; nitrogen
Prior art date: 1998-01-28

Application number

TW088101212A

Other languages

English (en)

Chinese (zh)

Inventor

Eric O Levenson

Ahmad Nmi Waleh

Original Assignee

Anon Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-01-28

Filing date

1999-03-23

Publication date

2005-09-21

1999-03-23 Application filed by Anon Inc filed Critical Anon Inc

2005-09-21 Application granted granted Critical

2005-09-21 Publication of TWI239994B publication Critical patent/TWI239994B/zh

Links

238000004380 ashing Methods 0.000 title claims abstract description 62
239000000758 substrate Substances 0.000 title claims abstract description 26
238000000034 method Methods 0.000 title claims description 36
230000008569 process Effects 0.000 title claims description 13
239000011368 organic material Substances 0.000 title claims description 9
239000007789 gas Substances 0.000 claims abstract description 53
AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 claims abstract description 51
MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 21
TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 9
239000001257 hydrogen Substances 0.000 claims abstract description 6
229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims abstract description 5
XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims abstract description 4
WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims abstract description 4
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 3
125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 2
229920002120 photoresistant polymer Polymers 0.000 claims description 27
239000012495 reaction gas Substances 0.000 claims description 19
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
239000001301 oxygen Substances 0.000 claims description 12
229910052760 oxygen Inorganic materials 0.000 claims description 12
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
239000000126 substance Substances 0.000 claims description 7
238000000576 coating method Methods 0.000 claims description 6
239000000463 material Substances 0.000 claims description 6
229910052757 nitrogen Inorganic materials 0.000 claims description 6
RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 4
229910052751 metal Inorganic materials 0.000 claims description 4
239000002184 metal Substances 0.000 claims description 4
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
239000004065 semiconductor Substances 0.000 claims description 4
229910052710 silicon Inorganic materials 0.000 claims description 4
239000010703 silicon Substances 0.000 claims description 4
LZDSILRDTDCIQT-UHFFFAOYSA-N dinitrogen trioxide Chemical compound [O-][N+](=O)N=O LZDSILRDTDCIQT-UHFFFAOYSA-N 0.000 claims description 3
239000011521 glass Substances 0.000 claims description 3
GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 2
239000000919 ceramic Substances 0.000 claims description 2
239000003989 dielectric material Substances 0.000 claims description 2
229910052732 germanium Inorganic materials 0.000 claims description 2
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
229910001092 metal group alloy Inorganic materials 0.000 claims description 2
150000002739 metals Chemical class 0.000 claims description 2
150000002894 organic compounds Chemical class 0.000 claims description 2
229920000642 polymer Polymers 0.000 claims description 2
239000007787 solid Substances 0.000 claims description 2
235000012431 wafers Nutrition 0.000 claims description 2
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims 2
JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims 2
MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims 1
229910052786 argon Inorganic materials 0.000 claims 1
239000002131 composite material Substances 0.000 claims 1
229910001873 dinitrogen Inorganic materials 0.000 claims 1
230000003628 erosive effect Effects 0.000 claims 1
239000001307 helium Substances 0.000 claims 1
229910052734 helium Inorganic materials 0.000 claims 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
150000004767 nitrides Chemical class 0.000 claims 1
229920000620 organic polymer Polymers 0.000 claims 1
125000002524 organometallic group Chemical group 0.000 claims 1
239000011347 resin Substances 0.000 claims 1
229920005989 resin Polymers 0.000 claims 1
239000000203 mixture Substances 0.000 abstract description 18
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 9
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 2
239000000460 chlorine Substances 0.000 abstract description 2
229910052801 chlorine Inorganic materials 0.000 abstract description 2
230000000153 supplemental effect Effects 0.000 abstract 3
238000012545 processing Methods 0.000 description 24
230000004913 activation Effects 0.000 description 13
239000010410 layer Substances 0.000 description 12
238000006243 chemical reaction Methods 0.000 description 6
238000004140 cleaning Methods 0.000 description 6
230000002079 cooperative effect Effects 0.000 description 6
238000004519 manufacturing process Methods 0.000 description 5
230000008859 change Effects 0.000 description 4
230000000694 effects Effects 0.000 description 4
238000005530 etching Methods 0.000 description 4
150000002500 ions Chemical class 0.000 description 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
239000011149 active material Substances 0.000 description 3
238000005516 engineering process Methods 0.000 description 3
229910001385 heavy metal Inorganic materials 0.000 description 3
229910052814 silicon oxide Inorganic materials 0.000 description 3
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
229910052778 Plutonium Inorganic materials 0.000 description 2
YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
125000004429 atom Chemical group 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
230000005611 electricity Effects 0.000 description 2
230000002349 favourable effect Effects 0.000 description 2
229910052731 fluorine Inorganic materials 0.000 description 2
239000011737 fluorine Substances 0.000 description 2
229910052735 hafnium Inorganic materials 0.000 description 2
VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
150000004820 halides Chemical class 0.000 description 2
229910052736 halogen Inorganic materials 0.000 description 2
150000002367 halogens Chemical class 0.000 description 2
150000002431 hydrogen Chemical class 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
-1 oxygen ions Chemical class 0.000 description 2
OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 2
ODUCDPQEXGNKDN-UHFFFAOYSA-N Nitrogen oxide(NO) Natural products O=N ODUCDPQEXGNKDN-UHFFFAOYSA-N 0.000 description 1
206010067482 No adverse event Diseases 0.000 description 1
239000004642 Polyimide Substances 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910052783 alkali metal Inorganic materials 0.000 description 1
150000001340 alkali metals Chemical class 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
239000000969 carrier Substances 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000011109 contamination Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 description 1
238000001312 dry etching Methods 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
230000009931 harmful effect Effects 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
229910052745 lead Inorganic materials 0.000 description 1
239000007788 liquid Substances 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
238000000691 measurement method Methods 0.000 description 1
239000012528 membrane Substances 0.000 description 1
150000002736 metal compounds Chemical class 0.000 description 1
230000005012 migration Effects 0.000 description 1
238000013508 migration Methods 0.000 description 1
229960001730 nitrous oxide Drugs 0.000 description 1
239000005416 organic matter Substances 0.000 description 1
238000002161 passivation Methods 0.000 description 1
230000035515 penetration Effects 0.000 description 1
FLDALJIYKQCYHH-UHFFFAOYSA-N plutonium(iv) oxide Chemical class [O-2].[O-2].[Pu+4] FLDALJIYKQCYHH-UHFFFAOYSA-N 0.000 description 1
229920001721 polyimide Polymers 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000007639 printing Methods 0.000 description 1
150000003254 radicals Chemical class 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
239000011343 solid material Substances 0.000 description 1
XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
239000002344 surface layer Substances 0.000 description 1
235000021419 vinegar Nutrition 0.000 description 1
239000000052 vinegar Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Manufacturing & Machinery (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Plasma & Fusion (AREA)
Drying Of Semiconductors (AREA)
Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

TW088101212A 1998-01-28 1999-03-23 Process for ashing organic materials from substrates TWI239994B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US1469598A	1998-01-28	1998-01-28

Publications (1)

Publication Number	Publication Date
TWI239994B true TWI239994B (en)	2005-09-21

Family

ID=21767120

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW088101212A TWI239994B (en)	1998-01-28	1999-03-23	Process for ashing organic materials from substrates

Country Status (9)

Country	Link
EP (1)	EP1074043A4 (fr)
JP (1)	JP3358808B2 (fr)
KR (1)	KR100377711B1 (fr)
CN (1)	CN1154159C (fr)
CA (1)	CA2319018C (fr)
IL (1)	IL137513A (fr)
MY (1)	MY134851A (fr)
TW (1)	TWI239994B (fr)
WO (1)	WO1999039382A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6231775B1 (en)	1998-01-28	2001-05-15	Anon, Inc.	Process for ashing organic materials from substrates
US20050136681A1 (en) *	2003-12-23	2005-06-23	Tokyo Electron Limited	Method and apparatus for removing photoresist from a substrate
KR100559947B1 (ko) *	2004-08-18	2006-03-13	동부아남반도체 주식회사	반도체 소자용 금속 배선의 후처리 방법
US7387968B2 (en)	2005-11-08	2008-06-17	Tokyo Electron Limited	Batch photoresist dry strip and ash system and process
US7381651B2 (en) *	2006-03-22	2008-06-03	Axcelis Technologies, Inc.	Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
US8043434B2 (en) *	2008-10-23	2011-10-25	Lam Research Corporation	Method and apparatus for removing photoresist
CN104599962A (zh) *	2014-12-29	2015-05-06	上海华虹宏力半导体制造有限公司	厚铝刻蚀工艺中聚合物的去除方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59163826A (ja) *	1983-03-08	1984-09-14	Toshiba Corp	ドライエツチング方法
EP0368732B1 (fr) *	1988-11-04	1995-06-28	Fujitsu Limited	Procédé pour former un masque en matière photorésistante
JPH0475323A (ja) *	1990-07-17	1992-03-10	Seiko Epson Corp	レジスト除去法
US5037506A (en) *	1990-09-06	1991-08-06	Subhash Gupta	Method of stripping layers of organic materials
FR2673763A1 (fr) *	1991-03-06	1992-09-11	Centre Nat Rech Scient	Procede de gravure anisotrope des polymeres par plasma.
JP3084910B2 (ja) *	1992-03-18	2000-09-04	ヤマハ株式会社	配線形成法
JPH05304089A (ja) *	1992-04-28	1993-11-16	Dainippon Screen Mfg Co Ltd	基板表面からのレジストの除去方法並びに装置
JP2572924B2 (ja) *	1992-09-04	1997-01-16	醇西脇	大気圧プラズマによる金属の表面処理法
US5550007A (en) *	1993-05-28	1996-08-27	Lucent Technologies Inc.	Surface-imaging technique for lithographic processes for device fabrication
JP3391410B2 (ja) *	1993-09-17	2003-03-31	富士通株式会社	レジストマスクの除去方法
US5824604A (en) *	1996-01-23	1998-10-20	Mattson Technology, Inc.	Hydrocarbon-enhanced dry stripping of photoresist
US5763016A (en) *	1996-12-19	1998-06-09	Anon, Incorporated	Method of forming patterns in organic coatings films and layers

1999
- 1999-01-26 IL IL13751399A patent/IL137513A/en not_active IP Right Cessation
- 1999-01-26 JP JP2000529750A patent/JP3358808B2/ja not_active Expired - Fee Related
- 1999-01-26 EP EP99904261A patent/EP1074043A4/fr not_active Ceased
- 1999-01-26 CN CNB99802399XA patent/CN1154159C/zh not_active Expired - Fee Related
- 1999-01-26 MY MYPI99000277A patent/MY134851A/en unknown
- 1999-01-26 KR KR10-2000-7008217A patent/KR100377711B1/ko not_active Expired - Fee Related
- 1999-01-26 WO PCT/US1999/001560 patent/WO1999039382A1/fr not_active Ceased
- 1999-01-26 CA CA002319018A patent/CA2319018C/fr not_active Expired - Fee Related
- 1999-03-23 TW TW088101212A patent/TWI239994B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
CN1154159C (zh)	2004-06-16
WO1999039382A1 (fr)	1999-08-05
IL137513A0 (en)	2001-07-24
CA2319018A1 (fr)	1999-08-05
KR100377711B1 (ko)	2003-03-26
CN1289452A (zh)	2001-03-28
JP3358808B2 (ja)	2002-12-24
KR20010040431A (ko)	2001-05-15
MY134851A (en)	2007-12-31
EP1074043A4 (fr)	2002-11-06
IL137513A (en)	2004-05-12
CA2319018C (fr)	2004-08-24
JP2002502125A (ja)	2002-01-22
EP1074043A1 (fr)	2001-02-07

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JPH01223733A (ja)	1989-09-06	炭化チタン系膜及び窒化チタン系膜のエッチング方法
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Legal Events

Date	Code	Title	Description
2017-06-21	MM4A	Annulment or lapse of patent due to non-payment of fees