TWI238176B - Highly reflective flake-based pigment and method for fabricating the same - Google Patents
Highly reflective flake-based pigment and method for fabricating the same Download PDFInfo
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- TWI238176B TWI238176B TW88115514A TW88115514A TWI238176B TW I238176 B TWI238176 B TW I238176B TW 88115514 A TW88115514 A TW 88115514A TW 88115514 A TW88115514 A TW 88115514A TW I238176 B TWI238176 B TW I238176B
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- oxide
- dielectric coating
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- 239000000049 pigment Substances 0.000 title claims abstract description 162
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000010410 layer Substances 0.000 claims abstract description 178
- 239000011247 coating layer Substances 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 239000006096 absorbing agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims description 170
- 239000011248 coating agent Substances 0.000 claims description 138
- 239000000463 material Substances 0.000 claims description 95
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 65
- 229910052782 aluminium Inorganic materials 0.000 claims description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 36
- 238000002310 reflectometry Methods 0.000 claims description 33
- 239000000203 mixture Substances 0.000 claims description 32
- 230000002745 absorbent Effects 0.000 claims description 28
- 239000002250 absorbent Substances 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 24
- 238000009501 film coating Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 15
- -1 sodium aluminum fluoride Chemical compound 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000975 dye Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 10
- 239000003086 colorant Substances 0.000 claims description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 8
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 7
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 239000005083 Zinc sulfide Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000004576 sand Substances 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 4
- 239000011195 cermet Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- VFLXBUJKRRJAKY-UHFFFAOYSA-N 13768-86-0 Chemical compound O=[Se](=O)=O VFLXBUJKRRJAKY-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000987 azo dye Substances 0.000 claims description 3
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 3
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 238000000197 pyrolysis Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 claims description 2
- 150000004056 anthraquinones Chemical class 0.000 claims description 2
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 claims description 2
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 claims description 2
- 230000007062 hydrolysis Effects 0.000 claims description 2
- 238000006460 hydrolysis reaction Methods 0.000 claims description 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims 4
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims 4
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims 4
- 229940075624 ytterbium oxide Drugs 0.000 claims 4
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 claims 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims 2
- QHEDSQMUHIMDOL-UHFFFAOYSA-J hafnium(4+);tetrafluoride Chemical compound F[Hf](F)(F)F QHEDSQMUHIMDOL-UHFFFAOYSA-J 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- HPNURIVGONRLQI-UHFFFAOYSA-K trifluoroeuropium Chemical compound F[Eu](F)F HPNURIVGONRLQI-UHFFFAOYSA-K 0.000 claims 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 239000004812 Fluorinated ethylene propylene Substances 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- XLWMYKCPNRBIDK-UHFFFAOYSA-N azanylidyneytterbium Chemical compound [Yb]#N XLWMYKCPNRBIDK-UHFFFAOYSA-N 0.000 claims 1
- QNDQILQPPKQROV-UHFFFAOYSA-N dizinc Chemical compound [Zn]=[Zn] QNDQILQPPKQROV-UHFFFAOYSA-N 0.000 claims 1
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- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 claims 1
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- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
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- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 20
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- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- HBEQXAKJSGXAIQ-UHFFFAOYSA-N oxopalladium Chemical compound [Pd]=O HBEQXAKJSGXAIQ-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
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Classifications
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- C01P2004/00—Particle morphology
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- C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C—CHEMISTRY; METALLURGY
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- C—CHEMISTRY; METALLURGY
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Pigments, Carbon Blacks, Or Wood Stains (AREA)
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1238176 A7 B7 五、發明説明(彳) 蜜jg背景 1、 發明範疇 (請先閲讀背面之注意事項再填寫本頁) 本發明大體上係有關一種金屬薄片顏料。詳言之,本 發明係有關一種具有改良之鏡面反射性之金屬薄片顏料。 2、 相關技藝 顏料通常係用於諸如塗層、墨液、擠塑物、塗料、整 理劑、.玻璃、陶瓷及化粧品等應用中提供光學及其他性質 。顏料有許多類型,其中有些係以金屬薄片爲基礎。此等 金屬薄片係包含金屬層薄膜,以改善該應用之光澤、光彩 、光輝、吸收性、遮蓋性及/或反射性。然而,該顏料之 光學性能係因其中各金屬薄片之固有限制而受到實質之限 制。 經濟部智慧財產局員工消費合作社印製 已知當欲於可見光波長(3 0 0 - 8 0 0毫微米)中 達到最大鏡面反射性時,金屬薄片應儘可能個別地平貼。 當該薄片係整體平面取向,以使該金屬薄片之最大表面積 曝露於入射光,而儘可能反射最多光線時,該大量薄片之 聚集產生最大之反射性,因而有最大之明亮度。 然而’影響該反射特性之主要因素係爲當該薄片使用 於特定應用下之大小或尺寸。例如,若該薄片厚,則大量 該厚片於一應用中結合,而無法同時平置於一大體上平坦 或水平之單一平面中,因爲相鄰薄片因其厚度而無法輕易 地彼此重疊。結果,許多薄片不利地定向於實質垂直取向 ’而大量薄片形成放射狀之非平面層。隨後照射於該非平 -4- 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇><297公釐) 1238176 A7 B7 五、發明説明(2 ) 面層之入射光受到極強之散射及非鏡面反射。因此,有利 於該應用之反射性被厚層薄片所消除。其次,厚層薄片經 (請先閲讀背面之注意事項再填寫本頁) 常導致其他困難,諸如自動塗佈噴槍於塗佈應用期間堵塞 〇 然而,亦已知當該薄片之厚度變薄時(非剛性,柔軟 ),其開始捲曲及/或皺縮。此因入射於該薄片上之光線 被散射及非鏡面反射,故降低其有利之平面性及反射性。 此外,若該薄片太薄時,當於應用期間施加於一表面上時 ,該薄片之表面輪廓上呈現許多微觀缺陷。例如,若該輪 廓粗糙,則該薄片係對應地粗糙或非平面。而且,因爲照 射該表面之入射光被散射及非鏡面反射,故產生不佳之平 面性及反射性。 經濟部智慧財產局員工消費合作社印製 有一些製造方法係由金屬之單一大型片材或薄膜形成 薄片,其係藉已知方法“斷裂”成小型薄片狀粒子。可形成兩 類斷裂,“延展性”及“脆性”。延展性斷裂係於發生斷裂之前 ,先使金屬於該斷面附近進行實質塑性變形。此種變形導 致數個畸形區域,具有不利之平面特性。如前文所述,此 等畸形區域,諸如具有捲曲或皺縮金屬之區域,不利地將 照射彼者之光線散射及漫射。另一方面,脆性斷面易於產 生斷面之前,幾乎或完全不使金屬產生塑性變形,而可製 造儘可能保持該較大金屬片之原始平面性的金屬薄片。結 果,期望於製造期間產生脆性斷面。 .然而,大部分具有高反射性之金屬皆不產生脆性斷面 。實際上,脆性斷面僅易發生於相對於其對應之拉伸強度 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐.) ~ 1238176 A7 B7 五、發明説明(3 ) (請先閲讀背面之注意事項再填寫本頁) 具有極大之壓縮強度的材料上。此因分佈於該材料整體中 之內部鍵結強度係包括拉伸及壓縮成分。拉伸強度補償指 向該材料平面外之力,而壓縮強度係與平面中之力有關。 因此,相同之壓縮及拉伸強度可產生延展變形,因爲進出 該平面之相對強度相等。相反地,當該壓縮強度大於該拉 伸強度時,該材料強度係指向該平面內,而非指向該平面 外。結果’相對於拉伸強度之高壓縮強度在施力下,產生 斷鍵及材料裂開。因此,鋁一 一例如具有約1 3 — 2 4磅 /英吋2之拉伸強度及約1 3 — 2 4磅/英吋2之壓縮強度 - -最常於單軸應力下進行延展斷裂,使該銘具有較不利 之反射特性。而且,一旦該鋁彎曲或變形,如延展性斷裂 所示,該鋁保持變形,而持續具有較不利之反射特性。結 果,難以製造金屬薄片,諸如鋁,而不產生降低反射性之 畸形。 經濟部智慧財產局員工消費合作社印製 如眾所周知,斷裂機制不僅於製造過程中對於金屬薄 片極爲重要,使用期間亦同樣重要。例如,施加方法諸如 乾燥塗料或墨液溶劑,亦於該薄片上誘發應力。此等由表 面張力所致之應力仍使該薄片產生斷裂或畸形。因爲該薄 片於施加期間之脆性斷裂亦易產生較小之薄片,以保持較 多較大薄片之原始平面性,而非產生捲曲或變形之薄片, 故改善薄片平面性及反射性。因此,薄片脆性不僅係爲製 造期間之較佳特徵,應用期間亦然。是故,先前技藝已嚐 試藉著同時調整其製造及應用之反射性,而產製薄、具剛 性而具脆性之薄片。 本紙張尺度適用中.國國家標準(CNS ) A4規格(210X297公釐) 1238176 Α7 Β7 五、發明説明(4 ) (請先閱讀背面之注意事項再填寫本頁) 但所有先則技藝之解決方法皆包括某些讓步。例如, 於美國專利第5,1 9 8,0 4 2號“用於塗佈材料之鋁合金 粉及含該鋁粉之材料”中,教示使該金屬薄片與其他材料成 爲合金,以降低該薄片具有負面影響之捲曲、皺縮及延展 性。然而,合金操作稀釋該薄片的反射性。 於美國專利第4,2 1 3,8 8 6號“處理鋁薄片以改善 塗佈組成物外觀”中,揭示一種表面黏合物質,將該塗佈樹 脂中之薄片拉平。然而,此方祛需化學性地調整該薄片及 該樹脂,以達到該物質之化學相容性。該相容性相當困難 ,而尙未證明可實用。 美國專利第4 , 6 2 9 , 5 1 2號“具有改良之性質的鋁 箔顏料”中,薄片係漂浮於一樹脂塗層上。相反地,此方法 使該薄片接受延展性攻擊,因爲薄片未受保護。該攻擊包 括腐蝕,不僅腐蝕該薄片,亦使該應用物具有斑駁或變色 之外觀。此外,若此方法與其他樹脂應用諸如透明頂塗層 塗料共同使用,則該頂塗層本身易因溶劑滲透而不利地損 及該薄片之平面取向。再次降低反射性。 經濟部智慧財產局員工消費合作社印製 美國專利第5 , 5 9 3,7 7 3號“金屬粉顏料”中,揭示 一種預先裂解之薄片,其具有小至基本上不可能產生薄片 畸形之寬高比。然而,該收縮寬高比亦對應地收縮該薄片 固有之反射能力。此因當該寬高比變小時’任何非平面薄 片於應用期間之取向皆使該薄片之小型表面積曝露於光反 射性最小之入射光下。其他先前技藝提議,諸如將一金屬 薄片封包於一金屬塗層中,亦降低該薄片寬局比’負面地 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _Ί · 1238176 A7 B7 五、發明説明(5 ) 消去該薄片反射入射光之能力。 (請先閲讀背面之注意事項再填寫本頁) 美國專利第3,6 2 2,4 7 3號“於鋁表面提供塗層之 方法”中,薄片之剛性藉著氧化該薄片之反射層,以形成剛 性氧化物外層而增加。然而,當使用氧化物時,該薄片之 固有反射性被降低了。此外,氧化物一般係於該薄片的缺 陷部位形成,而妨礙該薄片表面上之均勻施加。此種不均 勻性導致反射性降低,亦導致斑駁之施加外觀。 已多方嚐試以藉著於其表面上施加單一或多層塗層’ 以改善薄片剛性。至今爲止,該單層塗層太厚,使得反射 性因該塗層大幅散光而受損。該多層塗層誘導更多之散射 ,而負面地導致光於各層間之邊界上漫射。此外,所有塗 層基本上皆爲有機性,而此等有機塗層結晶結構固有之天 然限制爲如何形成薄的塗層,而仍於脆弱之金屬薄片上提 供結構剛性。不幸的是,天然厚度限制極大,使得其他施 加方法仍受限於此厚度。該方法包括經由自動塗佈噴槍噴 灑該薄片。而且,當於溶劑中施加時,有機塗層最後因爲 溶解之相關效應而喪失結構剛性。 經濟部智慧財產局員工消費合作社印製 雖然存在某些剛性而有利於脆性斷面之反射性塗層, 但該塗層因不使用金屬薄片而與大部分其他先前技藝相異 。例如美國專利第4,3 0 9,0 7 5號“具有最大反射性之 多層鏡面”中,教示一種多層塗層,僅模擬一金屬薄片及其 反射性。此等塗層--因爲係交替高及低折射率層而被稱 作“高-低”塗層- -係用以產生反射層,模擬金屬薄片的反 射性。另一實例係描述於B ◦ 1 〇 m e y申請之美國專利第
本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐.) T 1238176 A7 B7 五、發明説明(6 ) (請先閲讀背面之注意事項再填寫本頁) 3,1 2 3,4 9〇號,其中Z n S層係塗佈於具有Mg F2 之頂層及底層。雖然具有剛性而易脆斷裂,但此結構一般 極厚(約2 1 5毫微米),而無法使用於許多需要薄片之 應用。而且,經常需要具有數層交替高-低塗層以模擬金 屬薄片。但當厚度及層數增加時,製造複雜性及成本負荷 因而增高。 是故,需尋求一種備擇方法,以平價地產製一種具有 改良之反射特性之薄、具剛性而脆之金屬薄片,以改善以 金屬薄片爲基礎之顏料的反射性。 發明之總結及目的 本發明之目的係提出一種改良之以金屬薄片爲基礎的 顏料,其含有實質剛性之薄金屬薄片,於約3 0‘ 0毫微米 至約8 0 0鼋微米之可見光波長範圍內具有良好之鏡面反 射特性。 經濟部智慧財產局員工消費合作社印製 本發明另一目的係提出一種改良之以金屬薄片爲基礎 的顏料,其中含有薄金屬薄片,具有脆性斷裂性質,以於 使用期間產生改良之反射特性。 本發明另一目的係提出一種相當具有成本效益之方法 ’用以產製改良之以金屬溥片爲基礎的顏料,該顏料中含 有薄、剛性且脆性之金屬薄片。 本發明另一目的係提出一種改良之以金屬薄片爲基礎 的顏料,其含有具有大寬高比的薄片。 根據例示而廣義描述之本發明,前述及其他目的係藉 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐.)~^ 1238176 A7 B7 五、發明説明(7 ) (請先閱讀背面之注意事項再填寫本頁) 著提供一種以薄片爲基礎的顏料而達成,該顏料具有多個 芯片節段(各由一中心反射層形成)及至少一層位於該反 射層側邊之介電質載體層。該芯片節段係爲極薄結構,具 有遠大於對應之單軸拉伸強度的單軸壓縮強度。此結構係 於製造及施加期間提供剛性及脆性斷裂之優點,結果使該 S1料於可見光波長範圍內具有較佳之平面及鏡面反射特性 °該剛性及脆性之較佳性質可使所形成之芯片輕易地斷裂 成小薄片,而不使該薄片變成捲曲或皺縮。該芯片節段亦 具有大的寬高比,有利於應用期間反射大量入射光。 根據本發明各個具體實例,可於所製造之芯片節段周 圍形成一或多層塗層。該塗層可包括各種介電質、吸收劑 、及/或其他光學塗層,厚度係視該顏料所需之光學特性 而定。該塗層係於該顏料上提供特定特性,諸如顏色漂移 、增色、磁性、日光吸收性等。 經濟部智慧財產局員工消費合作社印製 於本發明製造高反射性之以薄片爲基礎之顏料的方法 中,第一介電質載體層係於一網狀材料之上表面上形成, 而一反射層係於該第一介電質載體層上形成。第二介電質 載體層可於該反射層上形成,以完成具有實質剛性之核心 薄片薄膜’而賦予該顏料高反射性。然後自該網狀材料移 出該芯片薄膜’以產生多個芯片節段。可視需要於該芯片 節段周圍形成一或多層塗層。 可由以下描述及申請專利範圍更充分地明瞭本發明之 其他目的及特色,或可藉著依循下文進行本發明而習得。 -10- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 1238176 A7 B7 五、發明説明(8 ) 祖^_簡單說明 (請先閲讀背面之注意事項再填寫本頁) 爲了更充分地明瞭得到前述及其他本發明優點及目的 之方法,參照其說明於附圖之特定具體實例而更特定地描 述本發明。已知此等附圖僅說明本發明之典型具體實例, 故不視爲本發明範圍之限制,描述目前已知用以進行及使 用本發明之最佳模式,而經由附圖更加詳細地說明,其中 圖1係爲本發明明亮金屬薄片薄膜之剖面圖; 圖2 A及2 B係爲本發明備擇具體實例之以薄片爲基 礎的顏料粒子之剖面圖; 圖3A - 3 D係爲本發明另一備擇具體實例之以薄片 爲基礎的顏料粒子之剖面圖; 圖4 A及4 B係爲本發明另一備擇具體實例之以薄片 爲基礎的顏料的剖面圖; 圖5 A及5 B係爲本發明另一備擇具體實例以薄片爲 基礎之顏料粒子的剖面圖; 經濟部智慧財產局員工消費合作社印製 圖6係爲本發明另一備擇具體實例之以薄片爲基礎的 顏料粒子的剖面圖; 圖7係爲本發明另一備擇具體實例之以薄片爲基礎之 顏料的剖面圖;且 圖8係爲各種以薄片爲基礎之顏料相對於波長之總反 射性的圖示。 主要元件對照表 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ~ 1238176 A7 B7 五、發明説明(9 經濟部智慧財產局員工消費合作社印製 10 芯片節段 11 網 12 載體層 14 反射層 16 介電載體層 18 薄膜光學層 2 0 a 以薄片爲基礎之顏料粒子 2 0b 以薄片爲基礎之顏料粒子 2 4 介電塗層 25 介電塗層 26 吸收劑塗層 30a 顏料粒子 30b 顏料粒子 3 0 c 顏料粒子 3 0 d 顏料粒子 3 4 介電塗層 35 介電塗層 36 吸收劑塗層 4 0a 顏料粒子 40b 顏料粒子 4 4 介電塗層 5 0 a 顏料粒子 5 0b 顏料粒子 5 2 介電塗層 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -12- 1238176 A7 B7 五、發明説明(1〇 4 5 7 6 0 6 2 6 4 6 6 6 8 7〇 7 2 7 4 7 6 介電塗層 介電塗層 介電塗層 介電塗層 以薄片爲基礎之顏料粒子 薄膜塗層 色門(c e r m e t )材料 磁性材料 紅外光反射性材料 以薄片爲基礎之顏料粒子 塗層 有機染料材料 無機著色劑材料 (請先閲讀背面之注意事項再填寫本頁) 發明昆复 本發明係有關 3 0 〇至約8〇〇 經濟部智慧財產局員工消費合作社印製 上置有介電質載體層。該介電質層係於 供剛性支撐及脆性斷裂特性。本發明之 分上環繞一或多層介電質、吸收性、及 薄片爲基礎之顏料- -其中含有薄、剛 一種以金屬薄片爲基礎之顏料,其於約 毫微米之可見光波長範圍內具有改良之 鏡面反射性。本發明之特色係提出一種該顏料薄片之核心 部分’其具有一薄反射層,一般係爲金屬,該反射層之一 或兩相對平面表面 該金屬反射層上提 特色係於該核心部 /或其他光學層,以產生大量顏料粒子 本發明以金屬 本纸張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 1238176 A7 B7 五、發明説明(11 ) (請先閲讀背面之注意事項再填寫本頁) 性且脆性之金屬薄片- -可藉著相對具有成本效益方法製 造。該以薄片爲基礎之顏料可使用於各種應用,諸如塗佈 組成物、墨液、擠塑物、塗料、靜電塗層、玻璃、陶瓷及 化粧品。該薄金屬薄片於該顏料中之脆性斷裂性質於使用 該顏料期間提供改良之反射特性。 參照附圖,其中相同結構係以相同編號表示,圖中僅 顯示明瞭本發明所需之結構。 圖1係表示一以薄片爲基礎之顏料薄膜,用以製造本 發明高反射性以薄片爲基礎之顏料。該以薄片爲基礎之顏 料薄膜包括一芯片節段1 0,其係於一撓性材料網1 1上 藉著習用沉積方法形成,如下文所詳述。該芯片節段1〇 係包括一中心反射層1 4,反射層1 4之一側邊形成至少 一·層載體層1 2。如圖1所示,可於反射層1 4之相反側 邊上形成第二層載體層1 6,以產製三層核心結構。 經濟部智慧財產局員工消費合作社印製 圖1亦顯示一或多層薄膜光學層1 8 (透視顯示)可 視情況位於芯片節段1 0上,先決條件爲該芯片節段之功 能保持不變。例如在以薄片形式自網1 1取下之前,先於 芯片節段1 〇之一或兩側面形成各種介電質、吸收劑、及 /或其他光學塗層,厚度係視該顏料所需之光學特性而定 。此等薄片可用以製造光學塗料薄片,用以形成反覆之光 學塗層,或可進行其他塗佈過程,以於該薄片周圍產製另 外之光學層。 就方便性及簡短性而言,本發明之芯片節段有時應稱 爲“明亮金屬薄片”(B M F )。此稱謂並不排除由除純金屬 本紙張尺度適用中國國家標準(CNS ) Α4規格(210x297公釐) Γ14. 1238176 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明説明(12 ) 以外之材料所形成之反射層。本發明較佳芯片節段另外詳 細描述於共待審申請案“明亮金屬薄片”(1 9 9 8年丄月 曰申請之U· S . Ser ·Ν〇·〇9/〇〇5,〇64) ,其倂入本文參考。 供反射層1 4使用之材料係經選擇,以具有適於顏料 用途之反射特性。此時較佳反射層材料係爲鋁,其具有良 好反射特性,同時價格不貴,且可輕易形成一薄層。然而 ’就本發明教示已知可使用其他反射性材料取代鋁。例如 ,銅、銀、金、鉑、鈀、鎳、鈷、鈮、鉻、錫、及其組成 物或此等或其他金屬之合金可作爲反射性材料。其他可使 用之反射性材料包括但不限於過渡金屬及鑭系金屬及其組 成物;及金屬碳化物、金屬氧化物、金屬氮化物、金屬硫 化物、其組成物、或金屬與一或多種此等材料之混合物。 反射層1 4之厚度可介於約4 0毫微米至約1 5 0毫 微米範圍內,唯此範圍應不視爲限制。例如,鋁反射層以 選擇約4 0毫微米之下限爲佳,使得該鋁呈不透明。其他 反射層材料可調整較高或較低最小厚度,以得到一不透明 厚度。此具體實例中,主要選擇約1 5 0毫微米之上限, 以於最終顏料中得到直徑對厚度之高的寬高比。某些情況 下仍可接受較大之厚度。 於更佳範圍內,反射層之厚度係由約8 〇毫微米至約 1 5 0毫微米,而最佳厚度係約1 〇 〇毫微米。就約8〇 毫微米之下限而言,此極限係經選擇以針對鋁層得到實質 不透明之厚度,以利於反射性。其他反射層材料可使用較 本紙張尺度適用中國國家標準(CNS ) Α4規格(21〇Χ29<7公釐) (請先閲讀背面之注意事項再填寫本頁}
1238176 A7 _ B7 五、發明説明(13 ) (請先閱讀背面之注意事項再填寫本頁) 高或較低之最小厚度’以得到不透明之厚度。該約1 5 〇 毫微米之上限仍係選擇以保持最終顏料之高的寬高比。然 而’所選擇之反射層厚度在未受到支撐下相當脆弱,該層 具有負面性質諸如捲曲、皺縮及延展性。因此,於反射層 1 4之任一或兩側面上形成載體層1 2及1 6。 該載體層以包含介電材料爲佳。該載體層之介電材料 以無機爲佳,因爲已發現無機介電材料具有良好之脆性及 剛性特性。例如,載體層1 2及1 6可由介電材料形成, 包括金屬氟化物、金屬氧化物、金屬硫化物、金屬氮化物 、.金屬碳化物及其組成物。適當之介電材料的實例包括氟 化鎂、一氧化矽、二氧化矽、氧化鋁、二氧化鈦、硫化鋅 、其組成物等。此等材料可輕易獲得及應用。然而,由本 發明技術得知,可提供本發明所描述之功能且可作爲具有 玻璃狀品質之剛性層的任何載體材料,皆可作爲此等材料 中之一的可令人接受之取代物。較佳情況係於應用期間, 保護該介電材料以防止溶劑之負面影響。 經濟部智慧財產局員工消費合作社印製 一載體層之厚度皆可由約1 0毫微米至約2 0 0毫微 米,以由約5 0毫微米至約2 0 0毫微米爲佳,而約 1〇0毫微米之厚度最佳。該載體層之塗層厚度範圍係基 於所使用之實際反射層及所選擇之載體塗層而改變。使用 鋁反射層及二氧化矽或氟化鎂作爲載體層時,根據該塗層 強度選擇約5 〇毫微米之厚度下限’小於該値時,則強度 不足以在撓曲鋁反射層之應力及應變下保持結構完整性( 因此保持薄片剛性)。約2 0 0毫微米之上限係根據於超 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公楚1 7^6 - " 1238176 A7 B7 五、發明説明(14 ) 過2 0 0毫微米厚度之介電載體層間發現彩色干擾。當彩 色干射爲有用時,可使用較厚之載體層。 (請先閱讀背面之注意事項再填寫本頁) 由前文所述,已知目則較佳Z芯片節段1 〇僅約 3 ο 〇毫微米厚:兩載體層各約1 〇 〇毫微米厚,而反射 層係約1 0 0毫微米。儘管此超小薄片厚度’仍意外地發 現具有此種三層結構之薄片具有足以作爲局反射性顏料之 剛性,主要係因爲該載體介電質之固有單軸強度。例如’ 二氧化矽之介電載體塗層之單軸壓縮強度約1 6 0,0 0〇 (磅/英吋2 ),而單軸拉伸強度約7 0 0 0 (磅/英吋2 ),防止內部反射層撓曲、彎曲或其他變形。 經濟部智慧財產局員工消費合作社印製 鋁具有約等於其壓縮強度之拉伸強度。當該鋁層係根. 據本發明以支撐之介電質形成層狀時,該芯片節段之單軸 壓縮強度(磅/英吋2 )係意外地較該單軸拉伸強度(磅/ 英吋2 )大約8倍。此種意外之結果於實驗上係支撐於脆性 斷裂之已知理論下,稱爲GnffUh‘s理論。此種強度之實質 差異將易因延展而斷裂之鋁層轉化成易因脆性而斷裂之層 。脆性斷裂特性有利地於製造期間形成一較大金屬膜,而 有利於在使用期間因應力而使個別金屬薄片斷裂。 於較佳脆性範圍中,當該芯片節段之單軸壓縮強度係 約該單軸拉伸強度之約6倍或更高時,該反射層係藉著載 體層而令人滿意地強化。雖然該芯片節段可於較該拉伸強 度低約6倍之量下強化,但該薄片易與延展性斷裂般地具 有負面斷裂特性。應已知雖然可於雙側面載體塗層中達成 前述剛性及脆性,但仍期望該反射層亦可塗佈於單一側面 -17- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 1238176 A7 B7 五、發明説明(15 ) (請先閱讀背面之注意事項再填寫本頁) ,而仍可於製造及使用期間達到有利之性質。然而,該單 層塗層一般需藉著熟習此技藝者已知之方式進行應力平衡 ,以防止該薄片捲曲。然而,該雙側面塗佈係爲該芯片節 段之較佳具體實例,令人滿意地改善薄片剛性,而促進可 使用於製造方法中之對稱性。 本發明芯片節段並非均勻形狀。該薄片可簡稱爲具有 一“直徑”。於較佳具體實例中,該芯片節段之直徑係介於約 1 — 5 0微米範圍內,以約5 - 1 5微米範圍內爲佳。本 發明芯片節段之薄片直徑相對於薄片厚度之寬高比係介於 約6 · 5 — 6 2 5範圍內,以約5 0 — 2 5〇範圍內爲佳 。眾所周知地,寬高比愈高,該芯片節段貼平之機率愈高 ,因而增加反射性。因爲許多先前顏料及/或薄片皆具有 僅約1 5之最佳寬高比,故已知本發明之寬高比將產生實 質改良之反射性。 經濟部智慧財產局員工消費合作社印製 製造本發明以薄片爲基礎之顏料的方法先包括製造芯 片節段1 0之方法。第一層介電載體層1 2係位於網1 1 之頂面,如圖1所示,而反射層1 4係位於載體層1 2上 ,使用習用沉積方法諸如物理性蒸汽沉積(P V D )。該 網1 1係由可撓性材料製造,可使用於習用滾塗裝.置。可 藉著沉積方法於反射層1 4上形成第二層介電載體層1 6 ,以完成具有實質剛性以提供高反射性之核心薄片膜。該 核心薄片膜自網1 1取下,以製造多個包括明亮金屬薄片 (B Μ F )之芯片節段1 〇。之後,於芯片節段1 0周圍 形成一或多層薄膜塗層,以產製各種顏料產物,如下文所 -18- 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐·) 1238176 A7 ___B7 五、發明説明(16 ) 詳述。 (請先閲讀背面之注意事項再填寫本頁) 該載體層之沉積以使用習用蒸汽沉積方法進行爲佳, 使得該..載體層因爲由該蒸汽相轉化成固相時所施加於該載 體層上之應力而斷裂。所沉積之反射層具有底層斷裂載體 層之特性’如同沉積於該反射層上之殘留載體層一般。如 此一來,該兩載體層支撐一極脆弱而薄之反射層膜,使其 成爲易沿該載體層之裂紋而以脆性而非延展性之方式斷裂 之的剛性反射層膜。之後,取下該可撓性網時,或藉著溶 解於預定液體或藉著脫模劑,兩方式皆係技藝界已知,多 個芯片節段係根據該載體層之裂紋而斷裂。此種製造技術 係與詳述於1 9 9 2年8月4日申請之美國專利第 5,1 3 5,8 1 2號“光學可變性薄膜薄片及其積取”者相同 ,其以提及方式倂入本發明。 製造之後,個別芯片節段具有意外平面特性,使各片 節段極爲平坦且光滑,即使於該斷面附近皆然。與先前具 有粗糙或非平面片節段之顏料不同地,此種平坦而光滑之 斷面使薄膜塗層進一步沉積,而不產生表面變形。 經濟部智慧財產局員工消費合作社印製 之後,該芯片節段硏磨成適於所需應用之尺寸。硏磨 之後,各種附加薄膜塗層沉積於該芯片節段上,視該顏料 於應用時所需之光學性能而定,用以形成本發明以薄片爲 基礎之顏料。應已知含有無機介電質之顏料薄片可於任何 製造階段硏磨成最終應用尺寸,之後施加該有機介電質。 下文將詳細討論具有明亮金屬薄片之核心部分的本發 明以薄片爲基礎顏料的各種備擇具體實例。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _ 1Q _ " 038176 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(17 ) 圖2 A係顯示本發明之一具體實例之以薄片爲基礎的 顏料粒子2 0 a的剖面圖,具有一芯片節段i 〇,包含具 有實質剛性之B M F。該芯片節段1 〇包括一反射層及至 少〜位於該反射層側面之載體層,如前文所述。第一層介 Μ塗層2 4係貫質ί哀繞或封包芯片節段1 〇。該介電塗層 2 4係包括具有“低”折射率之材料,於本發明定義爲約 1 · 6 5或更低之折射率。適用於介電塗層2 4之低折射 率材料包括二氧化矽(s 1〇2 )、氧化鋁(A 1 2〇3 ) 、金屬氟化物諸如氟化鎂(M g F 2 )、氟化鋁(A 1 F 3 )、氟化鈽(C e F 3 )、氟化鑭(L a F 3 )、氟化鋁鈉 (例如 N a 3 A 1 F 6 或 N a 5 A 1 3 F i 4 )、氟化鈸( N d F 3 )、氟化釤(S m F 3 )、氟化鋇(B a F 2 )、 氟化鈣(C a F 2 )、氟化鋰(L i F )、其組成物,或具 有約1 · 6 5或更低之折射率的任何其他低折射率材料。 例如,可使用有機單體及聚合物作爲低折射率材料,包括 二烯或烯類,諸如丙烯酸酯(例如甲基丙烯酸酯)、全氟 烯類、聚四氟乙烯(鐵弗龍)、氟化乙烯丙烯(F E P ) 、其組成物等。介電塗層2 4之光學厚度以具有特定設計 波長之半波長的倍數爲佳,物理厚度少介於約5 0毫微米 至約8 0 0毫微米範圍內,以由約7 2毫微米至約7 6〇 毫微米爲佳,而約2 0 0毫微米至約6 0 0毫微米範圍內 更佳。 第一層吸收劑塗層2 6係實質環繞或封包介電塗層 2 4。適用於吸收劑塗層2 6之材料包括在可見光譜中具 (請先閱讀背面之注意事項再填寫本頁)
本紙張尺度適用中國國家標準(CNS ) A4規格(21〇x297公釐) -20- 1238176 A7 B7 五、發明説明(18 ) (請先閱讀背面之注意事項再填寫本頁) 有均勻吸光性或選擇性吸光性之所有金屬。該金屬之實例 包括鉻、鎳、鐵、鈦、鋁、鎢、鉬、鈮、其組成物或合金 ,諸如Inconel ( N 1 — C r — F e )、混合於介電基質中 之金屬、或其他可於可見光譜中作爲均勻或選擇性吸光劑 之物質。該吸收劑塗層2 6以具有介於約2毫微米至約 8 〇毫微米範圍內之厚度爲佳,以由約3毫微米至約3〇 毫微米更佳。然而,已知該介電質及吸收劑塗層可使用其 他厚度,以改變該顏料之光學性能。 已知較薄厚度之吸收劑塗層不需連續以作爲光學吸收 劑。例如,多個島狀或點狀吸收劑材料即足以作爲吸收劑 〇 經濟部智慧財產局員工消費合作社印製 該介電塗層2 4及吸收劑塗層2 6係藉著習用塗佈方 法於顏料粒子2 0 a之芯片節段1 〇旁形成。例如,適於 形成該介電塗層之較佳方法係包括但不限於真空蒸汽沉積 '溶膠-凝膠水解、流體化床中之化學蒸汽沉積(C V D )、電化學沉積、及於該薄片表面上聚合一有機單體。適 於形成該吸收劑塗層之方法包括但不限於蒸汽沉積、於粒 子之機械振動床上濺射、藉著金屬-有機化合物之熱解而 #解、及化學蒸汽沉積流體化床。若不進行其他硏磨,則 此等方法產生一被封包之芯片節段,周圍環繞有介電及吸 1&劑材料。周圍具有多層塗層之顏料薄片的製造期間,可 ί采用前述塗佈方法的各種組合。 圖2 Β係爲本發明備擇具體實例之以薄片爲基礎的顏 料粒子2 〇 b的剖面圖。顏料粒子2 0 b包括類似前述顏 -21 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 1238176 A 7 s___ B7 五 經濟部智慧財產局員工消費合作社印製 、發明説明(19 ) 、、粒子2 0 a之成分’包括一芯片節段1 〇,包含b μ F t成第一層介電塗層2 5,以實質環繞或封包芯片節段 (請先閱讀背面之注意事項再填寫本覓) 1 〇。該介電塗層2 5係包含具有“高,,折射率之材料,於本 π明中疋我爲大於約1 · 6 5之折射率。適於介電塗層 2 5之高折射率材料係包括硫化鋅(z n s )、氧化鋅( Zn〇)、氧化鉻(Zr〇)、二氧化鈦(Ti〇2)、碳 、氧化銦(I η 2〇3 )、氧化銦錫(][τ〇)、五氧化二 鉅(T a 2〇3 )、氧化鈽(c e〇2 )、氧化釔(Y 2〇3 )、氧化銪(E u 2〇3 )、氧化鐵諸如氧化(π )二鐵( 瓜)(F e 3〇4 )及氧化鐵(F e 2〇3 )、氮化給( Η ί N )、碳化給(H f C )、氧化給(H f〇2 )、氧化 鑭(L· a 2〇3 )、氧化鎂(M g〇)、氧化銨(N d 2〇3 )、氧化鐯(PreOH)、氧化衫(Sm2〇3)、氧化 銻(S b 2 0 3 )、碳化矽(S i C )、氮化矽(S i 3 N 4 )、單氧化矽(S i〇)、三氧化硒(S e 2〇3 )、氧化 錫(S η〇2 )、三氧化鎢(W〇3 )、其組成物等。該介 電塗層2 5係具有介於由約5 0毫微米至約8 0 0毫微米 範圍內之物理厚度爲佳,而由約7 2毫微米至約7 6 〇毫 微米更佳。 吸收劑塗層2 6係實質環繞或封包介電塗層2 5。該 吸收劑塗層2 6可由與粒子2 0 a相同之材料形成’而具 有相同之厚度範圍。該介電塗層2 5及吸收劑塗層2 6可 藉由前述針對粒子2 0 a所描述之習用塗佈方法環繞於芯 片節段1 0周圍。 -22- 尺度用中國國家標準(CNS ) A4規格(210><297公釐-) 1238176 A7 B7 五、發明説明(2〇 ) 圖3 A 一 3 D係爲本發明另一具體實例之以薄片爲基 礎的顏料粒子之剖面圖。如圖3 A所示,顏料粒子3〇a 係具有與則述粒子2 〇 a相同之成分內部結構。此包括一 芯片節段1 0 - 一包含B M F、環繞於芯片節段1 〇周圍 之由低折射率材料形成之第一層介電塗層、及環繞於介電 塗層2 4周圍之第一層吸收劑塗層2 6。該顏料粒子 3 〇 a另外包括環繞於吸收劑塗層2 6周圍之第二層低折 射率材料介電塗層3 4,及環繞於介電塗層3 4周圍之第 二層吸收劑塗層3 6。該第一層及第二層介電塗層係具有 約1 ♦ 6 5或更低之折射率。該附加之介電及吸收劑塗層 可使用則述習用塗佈方法而由相同材料形成,而具有與粒 子2 0 a相同之厚度範圍。 圖3 B係說明本發明備擇具體實例釔顏料粒子3 〇 b 。顏料粒子3 0 b具有與前述粒子2 0 b相同成分之內部 結構。此包括一芯片節段1 〇--包含B M F、環繞於芯 片節段1 0周圍之第一層高折射率材料介電塗層2 5、及 環繞於介電塗層2 5周圍之第一種吸收劑塗層2 6。該顏 料粒子3 〇 b另外包括一環繞於吸收劑塗層2 6周圍之第 一層咼折射率材料介電塗層3 5、及環繞於該介電塗層 3 5周圍之第二層吸收劑塗層3 6。該第一層及第二層介 電塗層係具有大於約1 . 6 5之折射率。 本發明另一備擇具體實例之顏料粒子3 〇 c係說明於 圖3 C中。顏料粒子3 0 c基本上具有與前述粒子3 〇 a 相问之結構,不同處係第二層尚折射率材料介電塗層3 5 本紙張尺度適用中國國家標準(CNS ) A4規格(210Χ297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 1238176 A7 B7 五、發明説明(21 ) 係環繞於吸收劑塗層2 6周圍。因此,介電塗層2 4具有 約1 · 6 5或較低之折射率,而介電塗層3 5具有大於約 (請先閱讀背面之注意事項再填寫本頁) 1 · 6 5之折射率。 圖3 D係說明本發明另一備擇具體實例之顏料粒子 3 0 d。該顏料粒子3 〇 d具有基本上與前述粒子3〇b 相同之結構,不同處係第二層低折射率材料介電層係環繞 於吸收劑塗層2 6周圍。因此,介電塗層2 5係具有大於 約1 · 6 5之折射率,而介電塗層係具有約1 · 6 5或較 低之折射率。 圖4 A及4 B係爲本發明另一備擇具體實例以薄片爲 基礎之顏料粒子的剖面圖。如圖4 A所示,顏料粒子. 4 〇 a具有與圖2 0A中粒子2 〇 a內部結構相同之成分 。此包括一芯片節段1 0 - 一包含B M F及環繞於芯片節 段1 0周圍之第一層低折射率材料介電塗層2 4。此外, 該顏料粒子4 0 b另外包括一實質環繞於第一層介電塗層 經濟部智慧財產局員工消費合作社印製 2 4周圍之第二層介電塗層4 4該第二層介電塗層4 4係 包含一吸收性介電材料諸如氧化鐵(例如F e 2〇3 )、單 氧化砂(S !〇)、氧化鉻(C r 2〇3 )、碳、氮化鈦( T i N )、鈦低ί貝氧化物(T i〇X,其中χ係小於 2 . 〇 )、其組成物等。 圖4 Β係表示內部結構成分與圖2 Β中粒子2 〇 b之 內部結構相同的顏料粒子4 0 b。包括一芯片節段i 〇 — -包含Β M F、及環繞於芯片節段1 〇周圍而由高折射率 材料形成之第一層介電塗層2 5。此外’顏料粒子4 〇 b 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 1238176 A7 -_ B7 五、發明説明(22 ) 包括貫質環繞於第一層介電塗層周圍而由吸收性材料形成 之第二層介電塗層4 4。 (請先閱讀背面之注意事項再填寫本頁) 圖5 A及5 B少爲本發明另一備擇具體實例之以薄片 爲基礎之顏料的粒子之剖面圖,其係由交替之高及低折射 率塗層形成。如圖5 A所示,顏料粒子5 〇 a具有成分與 圖4 A中之粒子4 〇 a的內部結構相同的內部結構。包括 一心片節段1 〇 一 一包含B M F、及環繞於該芯片節段 1 ◦周圍之第二個低折射率材料介電塗層2 4。此外,顏 料粒子5 〇 a包括實質環繞第一層介電塗層2 4之第二層 尚折射率材料介電塗層5 2、實質環繞第二層介電塗層 5 2之第二層低折射率材料介電塗層5 4、及實質環繞第 二層介電塗層5 4之第四層高折射率材料介電塗層5 6。 經濟部智慧財產局員工消費合作社印製 如圖5 B所示,顏料粒子5 〇 ^具有成分與圖4A之 粒子4 0 b的內部結構相同的內部結構。包括包含b μ f 之心片節段1 〇、及環繞於芯片節段1 〇周圍之第一層高 折射率材料介電塗層2 5。此外,顏料粒子5 〇 b包括實 質環繞於第一層介電塗層2 5周圍之第二層低折射率材料 7丨电塗層5 3、貫質環繞於第二層介電塗層5 3周圍之第 二層局折射率材料介電塗層5 5、及實質環繞於第三層介 電塗層5 5周圍之第四層低折射率材料介電塗層5 7。 前述本發明顏料粒子具體實例(圖2 A 一 5 B )特別 可使用於製備具有色彩漂移性質之顏料、非漂移彩色顏料 、具有增色性之顏料、高反射性、磁性、及彩色之金屬。 例如’於塗層中使用高折射率材料可產製具有純色之顏料 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -25- 1238176 A7 ____B7 -------— _______ 五、發明説明(23 ) (請先閱讀背面之注意事項再填寫本頁) ’使用低折射率介電材料可產生具有色彩漂移性質之顏料 。圖6係爲本發明備擇具體實例之以薄片爲基礎的顏料粒 子6 0的剖面圖。該顏料粒子6 〇係包括一包含B M F之 芯片節段1 0、及位於芯片節段1 〇上之薄膜塗層6 2。 .5亥溥膜塗層6 2可由一或多層各種不同材料形成。該薄膜 塗層6 2係具有由約3至約4 0 0 0毫微米(4微米)之 厚度’以由約5 0毫微米至約8 0 0毫微米爲佳,而由約 2〇0毫微米至約6 0 〇毫微米更佳。 於一具體實例中’該薄膜塗層6 2可爲色門(cermet ).(陶瓷一金屬)材料6 4,針對該顏料提供選擇性陽光 吸收性。H.Gurev於1 9 7 9年於1 0月1 8日申請之申請 案“選擇性陽光吸收劑及摻有彼者之結構”(編號 8 6,0 7 6 ’現已放棄)中,例示有用以形成色門材料之 材料及硏究。前述已放棄之申請案以提及方式倂入本發明 〇 另一具體實例中,薄膜塗層可爲至少一層磁性材料。 經濟部智慧財產局員工消費合作社印製 該磁性材料可用以產製色彩漂移顏料,以使用於諸如信用 卡、支票、或條碼圖型。其中一種較佳之磁性塗層設計係 爲對稱性地施加鈷-鎳合金,該鈷及鎳之重量比個別係爲 8 0百分比及2 0百分比,沉積於芯片節段1 0周圍。其 他可使用於芯片節段1 0之磁性色彩漂移塗層係描述於美 國專利第4,8 3 8,6 4 8號中,以提及方式倂入本發明。
另一具體實例中,顏料粒子6 0之薄膜塗層6 2可包 括至少一層紅外光(I R )反射性材料6 8。適當之I R •26- 本紙張尺度逍用中國國家標準(CNS ) A4規格(210 X 297公釐) !238176 Α7 Β7 五、發明説明(24 ) (請先閲讀背面之注意事項再填寫本頁) 反射性材料包括氧化銦錫、氧化銪(E U 2〇3 )、五氧化 二釩(V 2〇3 )、氧化銶(R e〇3 )、硼化鑭(L a B ( )、其組成物等。 圖7係爲本發明另一備擇具體實例之以薄片爲基礎的 顏料粒子7 0的剖面圖◦顏料粒子7 0係包括一包含有 B M F之芯片節段1 〇、及一位於芯片節段1 〇上之輻射 吸收性材料(例如可見光或紅外光)塗層7 2。該塗層 7 2可由一或多層各種不同之吸收性材料形成。塗層7 2 以具有由約3毫微米至約4 0 0毫微米之厚度爲佳,而由 約5 0毫微米至約2 0 0毫微米更佳。 於一具體實例中,塗層7 2可由一有機染料材料7 4 形成。適當之有機染料實例包括銅酞花青、茈、蒽醌等; 偶氮染料及偶氮基金屬染料,諸如鋁紅R L W、鋁銅、鋁 棗紅R L、鋁火紅“1^、鋁紅01^'\¥、鋁紫(:1^贾等;及 其組成物或混合物。 經濟部智慧財產局員工消費合作社印製 另一具體實例中,塗層7 2可由氧化鋁或二氧化矽藉 著溶膠-凝膠方法形成,有機染料吸收於該溶膠-凝膠塗 層中或鍵結於該塗層表面上。適用於該溶膠-凝膠塗佈方 法之有機染料係包括Sandoz Coampany所售商標 Aluminiumrot GLW(銘紅 GLW)及 Aluminiumviolett CLW (銘 紫C L W )。鋁紅G L W係爲含有銅之偶氮基金屬錯合物 ,而鋁紫C L W係爲純有機偶氮基染料。可使用於本發明 之溶膠一凝膠塗佈技術係揭示於BrocUlla ( 1 9 9 8 )美 國專利第4,了 5 6,7 7 1號;Zink等人,由溶膠—凝膠 -27- 本紙張尺度適用中.國國家標準(CNS ) A4規格(21〇Χ297公釐) 1238176 Α7 _Β7 五、發明説明(25 ) 方法製備之鋁矽酸鹽玻璃的光學探針及性質,聚合物彳才_ 科學工程,6 1 ,第204 — 20 8頁( 1 989),及
MeKieman等人,摻雜於藉溶膠-凝膠技術製備之矽酸鹽及 鋁矽酸鹽玻璃中之香豆素乾燥的發光及雷射作用,j In〇。 Organomet.Polym.l ( 1 )第 8 7 — 1 〇 3 頁(1 9 g 1 ) ;其揭示以提及方式倂入本發明。 另一具體實例中,塗層7 2係由無機著色劑材料7 6 形成。適當之無機著色劑係包括氮化鈦、氮化鉻、氧化絡 、氧化鐵、摻雜有鈷之氧化鋁、其組成物或混合物等。該 有機染料及無機著色劑可用以得到具有明亮顏色之顏料。 前述具體實例之各種修飾及組合亦視爲本發明之範圍 。例如,可於薄片形成之前,於前述粒子實施例周圍或於 B M F薄膜上形成附加之介電、吸收劑、及/或其他光學 塗層,以產生其他所需之光學特性。 以下實施例係用以說明本發明,而不限制本發明範圍 實施例Γ 製備數個明亮金屬薄片顏料之試樣,每個試樣皆含有 多個本發明芯片節段。該反射層各具有約1 Q Q毫微米厚 度之銘,直徑係由約1 - 5 0微米範圍。於該反射層之相 對平面表面上形成厚度介於約1 0 0 - 2 〇 〇毫微米範圍 內之無機介電載體層。該介電載體層係由二氧化砂或氟化 鎂形成。 本紙張尺度適用中.國國家標準( CNS ) Α4規格(210X297公釐) ~Γ7 一 ί請先閎讀背面之注意事項再填寫本頁} ▼裝 -訂 經濟部智慧財產局員工消費合作社印製 1238176 A7 B7 五、發明説明(26 ) 童-施例2 (請先閱讀背面之注意事項再填寫本頁) 觀察以各種波長之函數表示之實際反射結果,針對實 施例以薄片爲基礎之顏料及各種其他以薄片爲基礎之顏料 進行記錄。圖8係爲總反射性相對於波長之反射性一波長 圖,顯示實施例1以薄片爲基礎之顏料的反射性曲線8 2 。該反射性曲線8 2實驗上亦受到得自各種其他測定裝置 (未顯示),諸如墨液繪製、塗料噴灑及顯微鏡之結果的 支持。 圖8上爲反射性曲線8 2,純鋁薄片8 4之理論反射 性曲線及塗佈有氟化鎂8 6或二氧化矽8 8之鋁薄片的預 測反射性曲線。該預測曲線係以鋁之反射性爲模型,以單 一薄片之各種波長加上多個薄片爲函數。應已知雖然反射 性曲線8 2於低於約6 8 0毫微米波長下所實際觀察之結 果係低於預測反射性値,但於高於約6 8 0毫微米所實際 觀察之反射性係高於二氧化矽8 8之預測反射性反應。 經濟部智慧財產局員工消費合作社印製 雖然該理論或預測反應並未適當地模擬,但意外地發 現較模擬反射性反應爲佳之本發明顏料芯片節段的兩倍優 勢結果。不僅該芯片節段之剛性使其個別具有較佳之平面 特性,該芯片節段--就多個薄片而言——極薄,而相信 該薄片使曝照入射光之表面積變大,而具有較大反射性。 即使附加層係置於該芯片節段附近,仍因該干擾效應爲最 大値而具有該鏡面反射性反應。 由圖8亦應可發現所有已知先前以鋁爲基礎之顏料的 -29- 本紙張尺度適用中.國國家標準(CNS ) A4規格(210X297公釐) 1238176 A7 B7 五、發明説明(27 ) 測量反射性結果係低於7 5百分比。因此,本發明以爲基 礎之改良芯片節段最小可達到總反射性的約5百分比改良 ’而鏡面反射性較先前以鋁爲基礎之顏料改善1 0百分比 。此等結果不僅遠遠地超越先前以鋁爲基礎之顏料,此等 結果亦較目前所預測者優越。 本發明可在不偏離其精神或必要特性下以其他特定形 式具體化。所描述之具體實例皆僅視爲說明而非限制。因 此,本發明範圍係由申請專利範圍表示,而非前文描述。 所有介於申請專利範圍之定義及同等範圍內之改變皆涵蓋 於其範圍內。 r------------IT----- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)
Claims (1)
1238176 A8 B8 C8 D8 六、申請專利範圍 化鋅、及其組成物的材料。 (請先閱讀背面之注意事項再填寫本頁) 8、 如申請專利範圍第1項之顏料,其中該載體層係 具有介於1 0毫微米至2 0 0毫微米範圍內之厚度。 9、 如申請專利範圍第1項之顏料,其中該第一層介 電塗層係具有1 · 6 5或較低之折射率。 1〇、如申請專利範圍第9項之顏料,其中該第一層 介電塗層係包含一種選自二氧化矽、氧化鋁、氟化鎂、氟 化鋁、氟化鈽、氟化鑭、氟化鋁鈉、氟化鈸、氟化釤、氟 化鋇、氟化鈣、氟化鋰、及其組成物的材料。 1 1、如申請專利範圍第9項之顏料,其中該第一層 介電塗層係包含一種選自丙烯酸酯、全氟烯、聚四氟乙烯 、氟化乙烯丙烯、其組成物等之材料。 1 2、如申請專利範圍第1項之顏料,其中該第一層 介電塗層係具有大於1 · 6 5之折射率。 經濟部智慧財產局員工消費合作社印製 1 3、如申請專利範圍第1 2項之顏料,其中該第一 層介電塗層係包含一種選自硫化鋅、氧化鋅、氧化锆、二 氧化鈦、碳、氧化銦、氧化銦錫、五氧化鉅、氧化鈽、氧 化i乙、氧化銪、氧化鐵、氮化飴、碳化耠、氧化給、氧化 鑭、氧化鎂、氧化鈸、氧化鐯、氧化釤、三氧化二銻、碳 化砂、氮化砍、一氧化砂、三氧化硒、氧化錫、三氧化鎢 、及其組成物。 1 4、如申請專利範圍第1項之顏料,其中該第一層 介電塗層係具有介於5 0毫微米至8 0 0毫微米範圍內之 厚度。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -32 - 1238176 A8 B8 C8 D8 六、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 1 5、如申_專利範S1第1項之顏料,其中該第一層 吸收劑塗層係包含一種選自鉻、鎳、鈦、鋁、鎢、鉬、銀 、N 1 — C r — F e、及其組成物或合金之材料。 1 6、如申請專利範圍第1項之顏料,其中該第一層 吸收劑塗層係具有介於2毫微米至8 〇毫微米範圍內之厚 度。 1 7、如申請專利範圍第1項之顏料,其中該芯片節 段係具有至少較單軸拉伸強度大6倍之單軸壓縮強度。 1 8、如申請專利範圍第1項之顏料,其另外包括第 二層實質環繞於該第一層吸收劑塗層周圍之介電塗層,及 第二層實質環繞於該第二層介電塗層周圍之吸收劑塗層。 1 9、如申請專利範圍第1 8項之顏料,其中該第一 層及第二層介電塗層係具有1 · 6 5或較低之折射率。 2〇、如申請專利範圍第1 8項之顏料,其中該第一 層及第二層介電塗層係具有大於1 . 6 5之折射率。 經濟部智慧財產局員工消費合作社印製 2 1、如申請專利範圍第1 8項之顏料,其中該第一 層介電塗層係具有1 . 6 5或較低之折射率,而第二層介 電塗層具有大於1 · 6 5之折射率。 2 2、如申請專利範圍第1 8項之顏料,其中該第一 層介電塗層係具有大於1 · 6 5之折射率,而第二層介電 塗層具有1 . 6 5或較低之折射率。 2 3、一種高度反射性而以薄片爲基礎之顏料,其包 含: 多個具有實質剛性之芯片節段,每個芯片節段皆包括 -33- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 1238176 ABCD 六、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 具有上表面、下表面與至少一側表面之一反射層及至少一 預形成於該反射層上下表面至少一者之上而非側表面上之 載體層; 實質環繞於各芯片節段周圍之第一層介電塗層;及 實質環繞於該第一層介電塗層周圍之第二層介電塗層 〇 2 4、如申請專利範圍第2 3項之顏料,其中該反射 層係包3 —種^自過渡金屬、鑭系金屬、及其組成物之材 料。 2 5、如申請專利範圍第2 3項之顏料,其中該反射 層係包含一種選自銘、銅、銀、金、纟自、纟g、錬、銘、錫 、鈮、鉻、及其組成物或合金的材料。 2 6、如申請專利範圍第2 3項之顏料,其中該反射 層包含一種選自金屬碳化物、金屬氧化物、金屬氮化物、 金屬硫化物、及其組成物的材料。 2 7、如申請專利範圍第2 3項之顏料,其中該反射 層係具有介於4 0¾微米至1 5 〇毫微米範阖內之厚度。 經濟部智慧財產局員工消費合作社印製 2 8 '如申請專利範圍第2 3項之顏料,其中該載體 層係包含一種選自金屬氟化物、金屬氧化物、金屬硫化物 '金屬氮化物、金屬碳化物、及其組成物的材料。 2 9、如申請專利範圍第2 3項之顏料,其中該載體 層係包含一種選自氟化鎂、一氧化矽、氧化鋁、二氧化鈦 、硫化鋅、及其組成物的材料。 3 〇、如申請專利範圍第2 3項卞_齟 #」 貝z _科,其中該載體 本紙張尺度適用中國國家標準(CNS ) A4規格(210χ29?公釐)- 734^---- 1238176 A8 B8 C8 D8 々、申請專利範圍 層係具有介於1 0毫微米至2 0 0毫微米範圍內之厚度。 (請先閱讀背面之注意事項再填寫本頁) 3 1、如申請專利範圍第2 3項之顏料,其中該第一 層介電塗層係具有1 · 6 5或較低之折射率。 3 2、如申g靑專利S弟3 1項之顏料,其中該第一 層介電塗層係包含一種選自二氧化矽、氧化鋁、氟化鎂、 氟化鋁、氟化鈽、氟化鑭、氟化鋁鈉、氟化銨、氟化衫、 氟化鋇、氟化鈣、氟化鋰、及其組成物的材料。 3 3、如申請專利範圍第3 1項之顏料,其中該第二 層介電塗層係包含一種選自氧化鐵、一氧化砂、氧化路、 碳、氮化鈦、氧化低價鈦、其組成物等之吸收性材料。 3 4、如申請專利範圍第2 3項之顏料,其中該第一 層介電塗層係具有大於1 · 6 5之折射率。 經濟部智慧財產局員工消費合作社印製 3 5、如申g靑專利軔圍弟3 4項之顏料,其中該第一^ 層介電塗層係包含一種選自硫化鋅、氧化鋅、氧化锆、二 氧化鈦、碳、氧化銦、氧化銦錫、五氧化鉬、氧化鈽、氧 化釔、氧化銪、氧化鐵、氮化飴、碳化飴、氧化給、氧化 鑭、氧化鎂、氧化銨、氧化鐯、氧化釤、三氧化二銻、碳 化矽、氮化矽、一氧化矽、三氧化硒、氧化錫、三氧化鎢 、及其組成物。 3 6、如申請專利範圍第3 4項之顏料,其中該第二 層介電塗層係包含一種選自氧化鐵、一氧化矽、氧化鉻、 碳、氮化鈦、氧化低價鈦、其組成物等之吸收性材料。 3 7、如申請專利範圍第3 1項之顏料’其中該第二 層介電塗層係具有大於1 · 6 5之折射率。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -35 - ' 1238176 A8 B8 C8 _____ D8 六、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 3 8、如申請專利範圍第3 7項之顏料,其另外包括 第三層實質環繞於該第二層介電塗層周圍之介電塗層,及 第四層實質環繞於該第三層介電塗層周圍之介電塗層。 3 9、如申請專利範圍第3 8項之顏料,其中該第三 層介電塗層係具有1 · 6 5或較低之折射率,而第四層介 電塗層具有大於1 · 6 5之折射率。 4 0、如申請專利範圍第3 4項之顏料,其中該第二 層介電塗層具有1 · 6 5或較低之折射率。 4 1、如申請專利範圍第4 〇項之顏料,其另外包括 第三層實質環繞於該第二層介電塗層周圍之介電塗層,及 第四層實質環繞於該第三層介電塗層周圍之介電塗層。 4 2、如申請專利範圍第4 1項之顏料,其中該第三 層介電塗層係具有大於1 · 6 5之折射率,而第四層介電 塗層具有1 · 6 5或較低之折射率。 4 3、一種高度反射性而以薄片爲基礎之顏料,其包 含: 經濟部智慧財產局員工消費合作社印製 多個具有實質剛性之芯片節段,每個芯片節段皆包括 具有上表面、下表面與至少一側表面之反射層及一對預形 成於該反射層上下表面上而非至少一側表面上的相反介電 載體層,其中該反射層係具有介於4 0毫微米至1 5 0毫 微米範圍內之厚度,而各載體層皆具有介於5 0毫微米至 2 0 0毫微米範圍內之厚度;及 一薄膜塗層,實質環繞於各芯片節段周圍。 4 4、如申請專利範圍第4 3項之顏料,其中該薄膜 -36- 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇Χ297公釐) 1238176 Α8 Β8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 塗層係包含一種色門(cermet )材料。 4 5、如申請專利範圍第4 3項之顏料,其中該薄膜 塗層係包括至少一種磁性材料層。 4 6、如申請專利範圍第4 5項之顏料,其中該磁性 材料係包含一種鈷-鎳合金。 4 7、如申請專利範圍第4 6項之顏料,其中該銘一 鎳合金係包含8 〇重量百分比之鈷及2 〇重量百分比之鎳 〇 4 8、如申請專利範圍第4 3項之顏料,其中該薄膜 塗層係包括至少一層紅外光反射性材料。 4 9、如申請專利範圍第4 8項之顏料,其中該紅外 光反射性材料係選自氧化銦錫、氧化銪、五氧化二釩、氧 化銶、硼化鑭、其組成物等。 5 0、如申請專利範圍第4 3項之顏料,其中該薄膜 塗層係爲一吸收性材料。 5 1、如申請專利範圍第5 〇項之顏料,其中該吸收 性材料係包含一種有機染料材料。 5 2、如申請專利範圍第5 1項之顏料,其中該有機 染料材料係選自銅酞花青、茈、蒽醌、偶氮染料及偶氮基 金屬染料、及其組成物或混合物。 5 3、如申請專利範圍第5 2項之顏料,其中該偶氮 染料及偶氮基金屬染料係選自鋁紅r L W、鋁銅、鋁棗紅 R L、鋁火紅M L、鋁紅G L W、鋁紫C L W等、及其組 成物或混合物。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公羞) -37- --------裝------訂----- (請先閱讀背面之注意事項再填寫本頁) 1238176 ABCD 六、申請專利範圍 5 4、如申請專利範圍第5 0項之顏料,其中該吸收 性材料係包含一種無機著色劑材料。 (請先閱讀背面之注意事項再填寫本頁) 5 5、如申請專利範圍第5 4項之顏料,其中該無機 著色劑材料係選自氮化鈦、氮化鉻、氧化鉻、氧化鐵、摻 雑有銘之氧化銘、其組成物或混合物。 5 6、一種製造高度反射性而以薄片爲基礎之顏料的 方法,其包括步驟有: 於一網狀材料之上層表面上形成第一層介電載體層; 於該第一層介電載體層上形成一反射層; 於該反射層上形成第二層介電載體層,以完成一個具 有實質剛性之核心薄片膜,而於該顏料上提供高反射性; 自該網狀材料上取下該核心薄片膜,以產生多個芯片 節段;及 於該芯片節段周圍形成薄膜塗層。 5 7、如申請專利範圍第5 6項之方法,其中該薄膜 塗層係包括至少一種實質環繞各芯片節段之介電塗層,及 至少一層實質環繞該介電塗層之吸收劑塗層。 經濟部智慧財產局員工消費合作社印製 5 8、如申請專利範圍第5 7項之方法,其中該介電 塗層係具有1 . 6 5或較低之折射率。 5 9、如申請專利範圍第5 7項之方法,其中該介電 塗層係具有大於1 . 6 5之折射率。 6〇、如申請專利範圍第5 6項之方法,其中該薄膜 塗層係包括第一層實質環繞各芯片節段之介電塗層,及第 二層實質環繞該第一層介電塗層之介電塗層。 玉紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -38 - 1238176 A8 B8 C8 _D8 六、申請專利範圍 6 1、如申請專利範圍第6 0項之方法,其中該第一 層介電塗層係具有1 · 6 5或較低之折射率。 (請先閱讀背面之注意事項再填寫本頁) 6 2、如申請專利範圍第6 0項之方法,其中該第一 層介電塗層係具有大於1 . 6 5之折射率。 6 3、如申請專利範圍第6 0項之方法,其中該第二 層介電塗層係包含一種吸收性材料。 6 4、如申請專利範圍第6 1項之方法,其中該第二 層介電塗層係具有大於1 · 6 5之折射率。 6 5、如申請專利範圍第6 2項之方法,其中該第二 層介電塗層係具有1 · 6 5或較小之折射率。 6 6、如申請專利範圍第5 6項之方法,其中該薄膜 塗層係包含一種色門(cermet )材料。 6 7、如申請專利範圍第5 6項之方法,其中該薄膜 塗層係包含一種磁性材料。 6 8、如申請專利範圍第5 6項之方法,其中該薄膜 塗層係包含一種紅外光反射性材料。 6 9、如申請專利範圍第5 6項之方法,其中該薄膜 塗層係包含一種有機染料材料。 經濟部智慧財產局員工消費合作社印製 7 〇、如申請專利範圍第5 6項之方法,其中該薄膜 塗層係包含一種無機著色劑材料。 7 1、如申請專利範圍第5 6項之方法,其中該薄膜 塗層係由一種選自真空蒸汽沉積、化學蒸汽沉積、電化學 沉積、溶膠-凝膠水解、濺射、熱解、及其組合之方法形 成。 本紙張尺度適用中國國家標準(CNS ) A4規格Ui〇x297公釐) -39 - ABCD 1238176 六、申請專利範圍 7 2、如申請專利範圍第5 6項之方法,其中該反射 層係具有介於4 0毫微米至1 5 0毫微米範圍內之厚度, 而該載體層係具有介於1 0毫微米至2 0 0毫微米範圍內 之厚度。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -40- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)
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| US09/207,121 US6150022A (en) | 1998-12-07 | 1998-12-07 | Bright metal flake based pigments |
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| TW88115514A TWI238176B (en) | 1998-12-07 | 1999-09-08 | Highly reflective flake-based pigment and method for fabricating the same |
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| EP (1) | EP1141143B2 (zh) |
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- 1999-08-06 WO PCT/US1999/017913 patent/WO2000034395A1/en not_active Ceased
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108359269A (zh) * | 2012-10-01 | 2018-08-03 | Viavi科技有限公司 | 一种包含颜料混合物的着色剂 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6150022A (en) | 2000-11-21 |
| WO2000034395A1 (en) | 2000-06-15 |
| US6383638B1 (en) | 2002-05-07 |
| US6387498B1 (en) | 2002-05-14 |
| EP1141143A1 (en) | 2001-10-10 |
| EP1141143B1 (en) | 2012-06-20 |
| EP1141143B2 (en) | 2017-01-25 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |