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A surface planarization method used on the semiconductor wafer on which there is a piece of ragged surface with broad pits, includes the following steps: 1. forming the first layer on the ragged surface; 2. forming one hard film layer on the first layer; 3. patterning the first layer and the hard film layer and forming polishing stop island on the broad pits; 4. forming the second as the top surface for polishing on the ragged surface and the polishing stop island, and the top surface and the ragged surface is softer than the hard film layer; 5. polishing the top surface in vertical direction for removing partial top surface until the top surface and the vertex of the polishing stop island is co-planar; 6. removing the residual parts of the hard film layer to finish the surface planarization.
Method of manufacturing semiconductor monocrystalline mirror-surface wafers which includes a gas phase etching process, and semiconductor monocrystalline mirror-surface wafers manufactured by the method
A method for isolating an active region of an MOS semiconductor device using a planarized refill layer which is not substantially overpolished and an MOS device fabricated thereby