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HK1054465A1 - Method of modifying the surface of a semiconductor wafer - Google Patents

Method of modifying the surface of a semiconductor wafer Download PDF

Info

Publication number
HK1054465A1
HK1054465A1 HK03104882.0A HK03104882A HK1054465A1 HK 1054465 A1 HK1054465 A1 HK 1054465A1 HK 03104882 A HK03104882 A HK 03104882A HK 1054465 A1 HK1054465 A1 HK 1054465A1
Authority
HK
Hong Kong
Prior art keywords
wafer
modifying
semiconductor wafer
combinations
group
Prior art date
Application number
HK03104882.0A
Other languages
Chinese (zh)
Inventor
J. Gagliardi John
Original Assignee
3M Innovative Properties Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Company filed Critical 3M Innovative Properties Company
Publication of HK1054465A1 publication Critical patent/HK1054465A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D2203/00—Tool surfaces formed with a pattern

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A method of modifying a surface of a semiconductor wafer is disclosed. The method includes: (a) contacting the wafer with a fixed abrasive article in the presence of a composition that includes water and a polar component having from 1 to 10 functional groups selected from the group consisting of -OH, -OOH, =O, and combinations thereof, and from 1 to 10 consecutive groups selected from the group consisting of -CH2-, -CH2O-, -C2H4O-, -C3H6O- and combinations thereof; and (b) relatively moving the wafer and the fixed abrasive article to modify the surface of the wafer.
HK03104882.0A 2000-04-28 2000-10-02 Method of modifying the surface of a semiconductor wafer HK1054465A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US56097300A 2000-04-28 2000-04-28
US09/560,973 2000-04-28
PCT/US2000/027091 WO2001084613A1 (en) 2000-04-28 2000-10-02 Method of modifying the surface of a semiconductor wafer

Publications (1)

Publication Number Publication Date
HK1054465A1 true HK1054465A1 (en) 2003-11-28

Family

ID=24240135

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03104882.0A HK1054465A1 (en) 2000-04-28 2000-10-02 Method of modifying the surface of a semiconductor wafer

Country Status (9)

Country Link
EP (1) EP1281197A1 (en)
JP (1) JP2003533023A (en)
KR (1) KR20020093991A (en)
CN (1) CN1452784A (en)
AU (1) AU2000278447A1 (en)
BR (1) BR0017222A (en)
CA (1) CA2407300A1 (en)
HK (1) HK1054465A1 (en)
WO (1) WO2001084613A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6682575B2 (en) 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
KR100623963B1 (en) * 2005-01-12 2006-09-19 제일모직주식회사 Slurry composition for metal wiring polishing and metal wiring polishing method using the same
CN102891077B (en) * 2012-09-26 2015-12-09 复旦大学 Water base technique for atomic layer deposition is adopted to prepare the method for high-k gate dielectric at graphenic surface
JP6358740B2 (en) * 2014-04-08 2018-07-18 山口精研工業株式会社 Polishing composition
JP6358739B2 (en) * 2014-04-08 2018-07-18 山口精研工業株式会社 Polishing composition
CN104842265A (en) * 2015-06-18 2015-08-19 上海申航热能科技有限公司 Grinding head and formula for polishing pipe inner wall
CN106002498B (en) * 2016-08-01 2018-04-06 中国电子科技集团公司第四十六研究所 A kind of surface grinding process method of organic DAST crystal
CN113881349B (en) * 2021-09-01 2022-10-21 上海工程技术大学 Polishing liquid and polishing method for chemical mechanical polishing of silicon carbide wafer silicon surface

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3735158A1 (en) * 1987-10-16 1989-05-03 Wacker Chemitronic METHOD FOR VIAL-FREE POLISHING OF SEMICONDUCTOR DISC
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5704987A (en) * 1996-01-19 1998-01-06 International Business Machines Corporation Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
US5972792A (en) * 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
EP1102821A4 (en) * 1998-06-10 2004-05-19 Rodel Inc COMPOSITION AND METHOD FOR CMP POLISHING METAL

Also Published As

Publication number Publication date
EP1281197A1 (en) 2003-02-05
KR20020093991A (en) 2002-12-16
CA2407300A1 (en) 2001-11-08
CN1452784A (en) 2003-10-29
AU2000278447A1 (en) 2001-11-12
WO2001084613A1 (en) 2001-11-08
BR0017222A (en) 2003-01-07
JP2003533023A (en) 2003-11-05

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