TW202540011A - Support glass substrate, laminate, laminate manufacturing method and semiconductor package manufacturing method - Google Patents

Abstract

This invention provides a support glass substrate with higher mechanical strength and higher transmittance on the short wavelength side, a laminate, a method for manufacturing the laminate, and a method for manufacturing semiconductor packaging. The support glass substrate of this invention is used to support a processed substrate, and as a glass composition, it contains, in molar percentage, _47-65 % _SiO2 , _5-15 % _Al2O3 , 5-20% _B2O3 , 6-25% CaO _, 1-15% SrO, and 1-15% BaO, and the molar ratio _B2O3 / _Al2O3 is ₁ or more.

Description

Supports manufacturing methods for glass substrates, laminates, and semiconductor packaging.

This invention relates to a support glass substrate, a laminate, a method for manufacturing the laminate, and a method for manufacturing semiconductor packaging.

For portable electronic devices such as mobile phones, laptops, and PDAs (Personal Data Assistance), miniaturization and weight reduction are required. At the same time, the mounting space for semiconductor chips used in these devices is strictly limited, making high-density semiconductor chip mounting a challenge. Therefore, in recent years, three-dimensional mounting technology has been used—that is, stacking semiconductor chips on top of each other and connecting them with wiring—to achieve high-density semiconductor packaging.

Furthermore, previous wafer-level packaging (WLP) was manufactured by forming bumps on a wafer and then dicing it to create a single wafer. However, previous WLP had the following problems: it was not easy to increase the number of pins, and because it was mounted with the back of the semiconductor chip exposed, the semiconductor chip was prone to defects.

Therefore, the fan-out type WLP was proposed as a new type of WLP. The fan-out type WLP can increase the number of pins, and by protecting the ends of the semiconductor chip, it can prevent semiconductor chip damage.

Furthermore, panel-level packaging (PLP) was proposed as a packaging technology. Compared to WLP, PLP can improve the manufacturability of semiconductor chips.

In fan-out WLP or PLP (hereinafter collectively referred to as fan-out packages), for example, a plurality of semiconductor chips are arranged on a supporting glass substrate, and then a processing substrate is formed by molding with a resin sealing material. The process includes steps such as wiring on one surface of the processing substrate and forming solder bumps.

Furthermore, in recent years, 2.5D or 2.nD semiconductor packaging technologies, namely CoWoS (Chip on Wafer on Substrate), have been proposed. Unlike fan-out packaging, CoWoS has a larger package size, making it suitable for high-performance computing. Regarding the characteristics of CoWoS, by using an intermediate substrate called an interposer, it is possible to achieve high-density wiring and compactly configure silicon wafers or DRAM modules.

In CoWoS, for example, after placing a silicon wafer on a supporting glass substrate, there are steps such as forming silicon through electrodes, forming a wiring layer, and forming solder bumps.

Furthermore, high-density mounting is further advanced through fan-out packaging or three-dimensional packaging combining CoWoS and SoIC (System on Integrated Chips).

These steps involve heat treatment at approximately 200°C, which raises concerns about deformation of the sealing material and changes in the dimensions of the processing substrate. If the dimensions of the processing substrate change, it becomes difficult to perform high-density wiring on one surface of the processing substrate, and it is also difficult to accurately form solder bumps.

Based on the above, research is underway on using glass substrates to support the processing substrate in order to suppress dimensional changes in the processing substrate (see Patent Document 1).

Glass substrates typically have smooth surfaces and high rigidity. Therefore, using a glass substrate as a support substrate allows for secure and accurate support of the processing substrate during the aforementioned 3D mounting process. However, if the glass substrate has poor mechanical properties, it is prone to breakage during the 3D mounting process. This can lead to decreased semiconductor packaging yield and potential contamination of the 3D mounting process. [Previous Art Documents][Patent Documents]

[Patent Document 1] Japanese Patent Application Publication No. 2023-31216

[Problem to be Solved by the Invention] From the perspective of higher Young's modulus, higher environmental resistance (acid resistance, etc.), and compatibility with the coefficient of thermal expansion of semiconductor packaging, the supporting glass substrate is preferably made of aluminoborosilicate glass with _Al₂O₃ , _B₂O₃ , _{and SiO₂} as the main components. Furthermore, from the perspective of improving glass meltability, the aluminoborosilicate glass preferably contains alkaline _earth oxides.

However, due to the high _SiO2 or _Al2O3 content in aluminoborosilicate glass, even with the presence of alkaline oxides, the glass's meltability is still insufficient. _This results in unmelted crystalline foreign matter within the molten support glass substrate, leading to lower manufacturability of the aluminoborosilicate glass used for the support glass substrate. Furthermore, there are concerns about a decrease in the mechanical strength of the support glass substrate. Specifically, in the aforementioned three-dimensional installation process, there is a concern that the support glass substrate may break due to unmelted crystalline foreign matter.

Furthermore, after processing the substrate, there is a step of separating the substrate from the glass support substrate. During this step, laser light passes through the support glass substrate and irradiates the release layer. Therefore, the support glass substrate needs to have high transmittance in the range of short to long wavelengths. In particular, the separation of the release layer sometimes uses short-wavelength light (e.g., 254 nm), in which case high transmittance (ultraviolet transmittance) at short wavelengths is required. However, if the support glass substrate contains the aforementioned unmelted crystalline foreign matter, there is a concern that light will be scattered around the crystalline foreign matter, leading to a decrease in transmittance on the short-wavelength side.

Furthermore, it is required that the supporting glass substrate have a specified coefficient of thermal expansion to match the coefficient of thermal expansion of the semiconductor package. Specifically, a coefficient of thermal expansion of 40× ^10⁻⁷ to 70× ^10⁻⁷ /℃ is required. However, due to the high content of _SiO₂ or _Al₂O₃ in aluminoborosilicate glass, the coefficient of thermal expansion is easily reduced unreasonably, and even with the presence of alkaline oxides, it is difficult to meet the above _- mentioned range of coefficient of thermal expansion.

This invention addresses the aforementioned issues by providing a support glass substrate, a laminate, a method for manufacturing the laminate, and a method for manufacturing a semiconductor package. In this support glass substrate, by giving the aluminoborosilicate glass a high Young's modulus and by suppressing the precipitation of unmelted crystalline foreign matter in the glass due to its excellent melting properties, the decrease in the mechanical strength and the decrease in transmittance at short wavelengths of the obtained support glass substrate can be avoided. Furthermore, this invention provides a support glass substrate, a laminate, a method for manufacturing the laminate, and a method for manufacturing a semiconductor package with excellent matching of the coefficient of thermal expansion to the semiconductor package. [Technical Means for Solving the Problem]

The inventors have conducted intensive research and discovered that by strictly limiting the glass composition of the supporting glass substrate, especially by strictly limiting the content of alkaline earth oxides in the aluminoborosilicate glass, the meltability of the glass during melting can be improved. This avoids the presence of unmelted crystalline foreign matter in the obtained supporting glass substrate, thereby solving the above-mentioned technical problems. The above solution is proposed as the present invention.

That is, the characteristic of the supporting glass substrate of state 1 is that it is a supporting glass substrate used to support the processed substrate, and as a glass composition, it contains, in mole percent, _47-65 % _SiO2 , _5-15 % _Al2O3 , 5-20% _B2O3 , 6-25% CaO, 1-15% SrO, and 1-15% BaO, and the mole ratio _B2O3 / _Al2O3 is ₁ or _more . Here, _{" B2O3} / _{Al2O3 "} refers to the value obtained by dividing the content _{of B2O3} by the content _{of Al2O3} .

The supporting glass substrate of state 2 is preferably the same as that of state 1, wherein the molar ratio of SrO/BaO as the glass composition is 0.5 to 5. Here, "SrO/BaO" refers to the value obtained by dividing the content of SrO by the content of BaO.

The supporting glass substrate of state 3 is preferably as in state 1 or state 2, wherein, as a glass composition, the content of CaO is greater than the content of SrO and the content of CaO is greater than the content of BaO in moles.

The supporting glass substrate of state 4 is preferably any one of state 1 to state 3, wherein, as a glass composition, the content of CaO is greater than the content of MgO in moles%.

The supporting glass substrate of state 5 is preferably a state of any one of states 1 to 4, wherein the glass composition contains 0 to 5% MgO in molar percentage.

The supporting glass substrate of state 6 is preferably any one of states 1 to 5, wherein the glass composition contains 0 to 1% _Li₂O + _Na₂O + _K₂O in moles. Here, " _Li₂O + _Na₂O + _K₂O " refers to the total amount of _Li₂O , _Na₂O and _K₂O .

The supporting glass substrate of state 7 is preferably a state of any one of states 1 to 6, wherein the glass composition contains 0 to 1% _Na₂O in moles.

The supporting glass substrate of state 8 is preferably a state of any one of states 1 to 7, wherein as a glass composition, it contains 0 to 1% SnO ₂ in moles.

The supporting glass substrate of state 9 is preferably a state of any one of states 1 to 8, wherein the glass composition contains 0 to 1% _ZrO2 in molar percentage.

The supporting glass substrate of state 10 is preferably any one of states 1 to 9, wherein the Young's modulus is 70 GPa or higher. Here, "Young's modulus" is a value measured using the bending resonance method.

The supporting glass substrate of state 11 is preferably any one of states 1 to 10, wherein the average coefficient of thermal expansion in the temperature range of 30 to 380°C is 40× ^10⁻⁷ to 70× ^10⁻⁷ /°C. Here, the "average coefficient of thermal expansion in the temperature range of 30 to 380°C" is a value measured using a thermal expansion gauge.

The supporting glass substrate of state 12 is preferably any one of states 1 to 11, wherein the liquid phase viscosity is 10 ^3.5 dPa・s or higher. Here, "liquid phase viscosity" refers to the viscosity at the liquid phase temperature, which can be measured using the platinum ball pulling method. The "liquid phase temperature" can be calculated as follows: glass powder that has passed through a standard sieve of 30 mesh (500 μm) and has residues at 50 mesh (300 μm) is placed in a platinum boat, kept in a temperature gradient furnace for 24 hours, and the temperature at which crystallization occurs is measured. Furthermore, liquid phase viscosity is an indicator of formability; the higher the liquid phase viscosity, the better the formability.

The supporting glass substrate of state 13 is preferably any one of states 1 to 12, wherein the temperature at a high temperature viscosity of 10 ^2.5 dPa·s does not reach 1400°C. Here, the "temperature at 10 ^2.5 dPa·s" can be measured using the platinum ball pulling method. Furthermore, the temperature at 10 ^2.5 dPa·s is equivalent to the melting temperature. The lower the temperature, the higher the solubility, which can suppress the precipitation of unmelted crystalline foreign matter from the molten glass during melting.

The supporting glass substrate of the state 14 is preferably any one of the states 1 to 13, wherein the transmittance, including reflection loss, at 254 nm with a thickness of 1 mm is 5% or more.

The supporting glass substrate of state 15 is preferably any one of states 1 to 14, having a wafer shape with a diameter of 100 to 500 mm, a thickness of less than 2.0 mm, an overall thickness deviation (TTV) of less than 5 μm, and a warpage of less than 60 μm. Here, "overall thickness deviation (TTV)" can be measured, for example, using a Bow/Warp measuring device SBW-331M/Ld manufactured by Kobelco Research Institute. "Warpage" refers to the sum of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire supporting glass substrate, and the absolute value of the distance between the lowest point and the least square focal plane, which can be measured, for example, using a Bow/Warp measuring device SBW-331M/Ld manufactured by Kobelco Research Institute.

The supporting glass substrate of pattern 16 is preferably a pattern of any one of patterns 1 to 14, having a generally rectangular shape with at least one side of 300 mm or more, a thickness of less than 2.0 mm, an overall thickness deviation of less than 5 μm, and a warpage of less than 60 μm. Here, the "overall thickness deviation (TTV)" can be measured, for example, using the Bow/Warp measuring device SBW-331M/Ld manufactured by Kobelco Research Institute. The "warpage" refers to the sum of the absolute value of the maximum distance between the highest point and the smallest square focal plane in the entire supporting glass substrate, and the absolute value of the lowest point and the smallest square focal plane, which can be measured, for example, using the Bow/Warp measuring device SBW-331M/Ld manufactured by Kobelco Research Institute.

The supporting glass substrate of the state sample 17 is preferably a state sample of any one of the states sample 1 to state sample 16, which is used for fan-out wafer-level packaging or fan-out panel-level packaging.

The feature of the laminate of state 18 is that it is a laminate having at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and the supporting glass substrate is a supporting glass substrate of any one of states 1 to 17.

The stack of state 19 is preferably as in state 18, wherein the processing substrate has at least a semiconductor wafer molded with a sealing material.

The method for manufacturing the laminate of state 20 is characterized by including the following steps: preparing a supporting glass substrate of any one of states 1 to 17; preparing a processing substrate; and laminating the supporting glass substrate and the processing substrate to obtain the laminate.

The semiconductor package manufacturing method of state 21 preferably includes the following steps: preparing a multilayer such as state 18 or state 19; and processing the substrate.

The semiconductor package manufacturing method of state 22 is preferably as in state 21, wherein the processing includes a step of wiring on one surface of a processing substrate.

The semiconductor package manufacturing method of state 23 is preferably as shown in state 21 or state 22, wherein the processing includes the step of forming solder bumps on one surface of a processing substrate. [Effects of the Invention]

According to the present invention, a supporting glass substrate, a laminate, a method for manufacturing the laminate, and a method for manufacturing a semiconductor package are provided. In the supporting glass substrate, by giving the aluminoborosilicate glass a high Young's modulus and suppressing the formation of unmelted crystalline foreign matter in the glass due to its excellent melting properties, the decrease in mechanical strength and transmittance at short wavelengths of the obtained supporting glass substrate can be avoided. Furthermore, a supporting glass substrate, a laminate, a method for manufacturing the laminate, and a method for manufacturing a semiconductor package with excellent matching of the coefficient of thermal expansion of the semiconductor package are provided.

The supporting glass substrate of this invention, as a glass composition, contains _, in mole percent, 47-65% _SiO₂ , 5-15% _{Al₂O₃ ,} 5-20% _B₂O₃ , 6-25% CaO _{, 1-15% SrO, and 1-15% BaO, and the mole ratio of B₂O₃ / Al₂O₃} is ₁ or more. The reasons for limiting the content of each component as described above will be explained below. Furthermore, in the description of the content of each component, % indicates mole percent. Also, unless otherwise specified, the numerical range indicated by "~" in this specification refers to the range including the minimum and maximum values recorded before and after "~".

_SiO₂ is the main component forming the glass framework. If the _SiO₂ content decreases, vitrification becomes difficult, the Young's modulus decreases, acid resistance decreases, and the coefficient of thermal expansion increases unreasonably. On the other hand, if the _SiO₂ content increases, vitrification becomes easier, the Young's modulus increases, and acid resistance improves, but the coefficient of thermal expansion decreases unreasonably, leading to higher high-temperature viscosity and a decrease in meltability and formability. Furthermore, if the _SiO₂ content increases, unmelted crystalline foreign matter easily forms in the glass during melting or forming, reducing the mechanical strength of the supporting glass substrate and decreasing transmittance at short wavelengths. Additionally, devitrifying crystals such as siliceous silica easily precipitate from the glass, causing the liquidus temperature to rise easily and reducing the productivity of the supporting glass substrate. Therefore, the _SiO2 content in the glass is 47% or more, preferably 49% or more or 51% or more, especially 53% or more and below 65%, preferably below 63% or 61% or below, and especially below 59%.

_{Al₂O₃ is} a component that forms the glass framework. If _{the Al₂O₃} content decreases, the Young's modulus and acid resistance tend to decline. Conversely, if _{the Al₂O₃} content increases, meltability and formability tend to decrease. During glass melting or forming, unmelted crystalline foreign matter easily forms in the glass, leading to a decrease in the mechanical strength of the supporting glass substrate and a decrease in transmittance at short wavelengths. Furthermore, devitrifying crystals such as mullite easily precipitate from the glass, causing the liquidus temperature to rise easily and reducing the productivity of the supporting glass substrate. Therefore, the _Al₂O₃ content in the _glass is 5% or more, preferably 6% or more, 7% or more, particularly 8% or more, and preferably 15% or less, preferably 14% or less, 13% or less, and particularly preferably 12% or less.

_B₂O₃ is a component _that improves melt permeability and resistance to devitrification. Therefore, in aluminoborosilicate glass, by maintaining an appropriate _B₂O₃ content, the formation of unmelted crystalline foreign matter in the glass is suppressed during melting or forming, or the precipitation of devitrifying crystals such as leucite or mullite is inhibited. However, if _{the B₂O₃ content} is too high, the Young's modulus decreases, and acid resistance decreases. Therefore, the _B₂O₃ content in _{the glass} is 5% or more, preferably 6% or more, 7% or more, particularly preferably 8% or more, and below 20%, preferably below 18%, below 16%, and particularly preferably below 14%.

The molar ratio of _B₂O₃ / _Al₂O₃ is 1 or _higher , preferably 1.1 or higher, 1.2 or higher, and especially 1.3 _or higher. If the molar ratio of _B₂O₃ / _Al₂O₃ in the glass is within the above range, _{it is} easy to obtain the following effect: during glass melting or forming, the generation of unmelted crystalline foreign matter or the precipitation of devitrifying crystals such as leucite or mullite is suppressed. Furthermore, the upper limit of the molar ratio of _B₂O₃ / _Al₂O₃ is preferably ₂ or lower, more preferably 1.8 or _lower . If the molar ratio of _B₂O₃ / _Al₂O₃ in the glass exceeds 2, _the Young's modulus of the glass tends to decrease, and its acid resistance tends to decrease _as well.

CaO is a component that improves Young's modulus and coefficient of thermal expansion. However, if the CaO content in the glass is too high, unmelted crystalline foreign matter or precipitated calcium feldspar crystals can easily form during glass melting or forming. Furthermore, if the supporting glass substrate contains unmelted crystalline foreign matter or devitrifying crystals such as calcium feldspar precipitate from the supporting glass substrate, the mechanical strength of the supporting glass substrate will decrease, and the transmittance at short wavelengths will also decrease. Therefore, the CaO content in the glass is 6% or more, preferably 8% or more, 10% or more, or 12% or more, particularly preferably 14% or more, and preferably 25% or less, preferably 24% or less, 23% or less, and particularly preferably 22% or less.

SrO is a component that improves devitrification resistance, Young's modulus, and coefficient of thermal expansion, and also reduces high-temperature viscosity and improves meltability. Therefore, it easily achieves the effect of suppressing the formation of unmelted crystalline foreign matter during glass melting or forming. However, if the SrO content in the glass is too high, the glass composition lacks balance, and devitrification resistance easily decreases. Therefore, the SrO content in the glass is preferably 1% or more, more than 2% or 3% or more, and even more than 4% and below, preferably below 14% or 13% or more, and even more preferably below 12%.

BaO is a component that improves devitrification resistance, Young's modulus, and coefficient of thermal expansion, and also reduces high-temperature viscosity and improves meltability. Therefore, it easily achieves the effect of suppressing the formation of unmelted crystalline foreign matter during glass melting or forming. However, if the BaO content in the glass is too high, the glass composition lacks balance, and devitrification resistance easily decreases. Therefore, the BaO content in the glass is preferably 1% or more, more than 2% or 3% or more, and even more than 4% and below, preferably below 15%, below 14% or 13% or more, and even more preferably below 12%.

The molar ratio of SrO/BaO is preferably 0.5 or higher, 0.6 or higher, and preferably 0.7 or higher, with a further preference of 5 or lower, 4 or lower, and an even preference of 3 or lower. If the molar ratio of SrO/BaO in the glass is within the above range, the high-temperature viscosity decreases and the meltability increases. Therefore, it is easier to obtain the effect of suppressing the generation of unmelted crystalline foreign matter during glass melting or forming, and the devitrification resistance of the glass is improved.

MgO is a component that increases Young's modulus and coefficient of thermal expansion. It is also a component among alkaline earth metal oxides that significantly increases Young's modulus. However, if the MgO content in the glass is too high, cordierite and other crystals are easily precipitated, which can reduce devitrification resistance. Therefore, the preferred MgO content in the glass is 0% or more, 0.1% or more, particularly 0.5% or more, and preferably 5% or less, 3% or less, particularly 1% or less.

If the glass contains excessive amounts of SrO or BaO, the glass density becomes unreasonably high. This increases the weight per unit area of the resulting supporting glass substrate, making installation difficult. Furthermore, the coefficient of thermal expansion of the glass becomes higher. Therefore, to prevent the precipitation of unmelted crystalline foreign matter during glass melting or forming, and to prevent the formation of devitrifying crystals such as calcite from the supporting glass substrate, thus avoiding the presence of alkaline oxides in the glass, it is preferable that the CaO content be greater than the SrO content, and that the CaO content be greater than the BaO content.

Furthermore, compared to CaO, MgO tends to decrease the devitrification resistance of glass. Therefore, when glass contains alkaline earth oxides, the content of CaO is preferably higher than that of MgO.

Alkali oxides ( _Li₂O , _Na₂O , and _K₂O ) are components that improve melt flow. However, if the content of alkali oxides in the glass is too high, the coefficient of thermal expansion can easily increase significantly. Furthermore, in fan-out packaging or CoWoS, after arranging multiple semiconductor chips on a supporting glass substrate and molding them with a resin sealant to form a processing substrate, there are concerns about the diffusion of alkali ions from the glass into the semiconductor chips during steps such as wiring on one surface of the processing substrate and forming solder bumps. Therefore, the content of _Li₂O + _Na₂O + _K₂O in the glass is preferably 1% or less, 0.5% or less, or 0.1% or less, and particularly preferably less than 0.05%.

_Li₂O is a component that improves melt flow. However, if the _Li₂O content in the glass is too high, the coefficient of thermal expansion can easily increase significantly. Furthermore, in fan-out packaging or CoWoS, after arranging multiple semiconductor chips on a supporting glass substrate and molding them with a resin sealant to form a processing substrate, there are concerns about Li ions diffusing into the semiconductor chips during steps such as wiring on one surface of the processing substrate and forming solder bumps. Therefore, the _Li₂O content in the glass is preferably 1% or less, 0.5% or less, or 0.1% or less, and particularly preferably less than 0.05%.

_Na₂O is a component that improves melt flow. However, if the _Na₂O content in the glass is too high, the coefficient of thermal expansion can easily increase significantly. Furthermore, in fan-out packaging or CoWoS, after arranging multiple semiconductor chips on a supporting glass substrate and molding them with a resin sealant to form a processing substrate, there are concerns about Na ions in the glass diffusing into the semiconductor chips during steps such as wiring on one surface of the processing substrate and forming solder bumps. Therefore, the _Na₂O content in the glass is preferably 1% or less, 0.5% or less, or 0.1% or less, and particularly preferably less than 0.05%.

_K₂O is a component that improves melt flow. However, if the _K₂O content in the glass is too high, the coefficient of thermal expansion can easily increase significantly. Furthermore, in fan-out packaging or CoWoS, after arranging multiple semiconductor chips on a supporting glass substrate and molding them with a resin sealant to form a processing substrate, there are concerns about the diffusion of K ions from the glass into the semiconductor chips during steps such as wiring on one surface of the processing substrate and forming solder bumps. Therefore, the _K₂O content in the glass is preferably 1% or less, 0.5% or less, or 0.1% or less, and particularly preferably less than 0.05%.

_SnO2 is a component with good clarifying properties in high-temperature regions and also reduces high-temperature viscosity. The preferred _SnO2 content in glass is 0% or more, 0.001% or more, and 0.01% or more, with an even higher content of 0.05% or more. It is also preferred to be 2% or less, 1% or less, and 0.9% or less, with an even higher content of 0.7% or less. If the _SnO2 content is too high, devitrifying _SnO2 crystals are easily precipitated. If the _SnO2 content is too low, the aforementioned effects are difficult to achieve.

_ZrO₂ is a component that improves weather resistance, Young's modulus, and crack resistance. However, if the _ZrO₂ content in the glass increases, the glass is prone to devitrification, and the introduced raw material is refractory. Therefore, there is a concern that the glass may contain unmelted crystalline foreign matter during melting or forming. Thus, the preferred _ZrO₂ content in the glass is below 1%, below 0.5%, below 0.1%, and preferably below 0.05%.

In addition to the above-mentioned components, other components may also be introduced into the glass as any component. Furthermore, from the viewpoint of truly enjoying the effects of the present invention, the content of other components besides the above-mentioned components, in terms of total amount, is preferably 15% or less, 10% or less, 5% or less, and particularly preferably less than 1%.

ZnO is a component that reduces high-temperature viscosity and significantly improves melt flowability and formability, as well as weather resistance. However, if the ZnO content is too high, the glass is prone to devitrification. Therefore, the ZnO content in glass is preferably below 3%, below 2%, or below 1%, and ideally below 0.1%.

_Fe₂O₃ can be introduced as an impurity or clarifying agent. However, if the _Fe₂O₃ content is too high, there is a concern about a decrease in ultraviolet transmittance. That _is , if the _Fe₂O₃ content is too high, it _becomes difficult to properly process the substrate and support glass substrate for bonding and debonding via the resin layer and release layer. Therefore, the _Fe₂O₃ content in the _glass is preferably _0.05 % or less, 0.03% or less, or 0.02% or less, and particularly preferably less than 0.0001%. Furthermore, the " _{Fe₂O₃ "} described in this invention includes both divalent and trivalent iron oxides, with divalent iron oxide being converted to _Fe₂O₃ for processing. Other oxides are also treated similarly based on the oxides described _herein .

_TiO2 can be used as a component to introduce impurities. However, if the _TiO2 content is too high, there is a concern about a decrease in ultraviolet transmittance. That is, if the _TiO2 content is too high, it will be difficult to properly bond and desorb the processed substrate and the supporting glass substrate through the resin layer and the release layer. Therefore, the _TiO2 content in the glass is preferably 0.05% or less, 0.03% or less, or 0.02% or less, and preferably less than 0.0001%.

While _{As₂O₃ and Sb₂O₃} function effectively as clarifying agents, from _an environmental perspective, it is preferable to minimize their presence. The preferred content of _{As₂O₃ and Sb₂O₃} in glass is less than 1%, less than 0.5%, and less than 0.1%, respectively, _with a particularly favorable content of less than 0.05%.

_SO3 is a clarifying component. The preferred _SO3 content in glass is below 1%, below 0.5%, or below 0.1%, with less than 0.01% being ideal. Excessive _SO3 content can easily lead to _SO2 reboil.

Furthermore, as long as the properties of the glass are not impaired, F, C, or Al, Si, etc., can be introduced into the glass as clarifying agents, with the content of each metal powder not exceeding 1%. Also, although CeO ₂ , etc., can be introduced at less than 1%, attention should be paid to the decrease in ultraviolet transmittance.

Cl (chlorine) is a component that promotes glass melting. Introducing Cl into the glass composition can lower the melting temperature and promote refining, resulting in lower melting costs and longer lifespan for the glassmaking furnace. However, excessive Cl content may corrode the metal parts surrounding the glassmaking furnace. Therefore, the preferred Cl content in glass is below 3%, below 1%, or below 0.5%, with less than 0.1% being ideal.

_{P₂O₅ is} a component that can suppress devitrification and crystallization. However, if a large amount of _P₂O₅ is introduced, the glass is prone to phase separation. _Therefore , the preferred _P₂O₅ content in the glass is 15% or less, 10% or less, 5 _% or less, 2.5% or less, 1.5% or less, or 0.5% or less, with less than 0.3% being particularly preferred.

_Y₂O₃ , _Nb₂O₅ , _{and La₂O₃} in glass play _a role in increasing the strain point and Young's modulus. However, if _the content of these components is more than 0.5%, especially more than 1%, there are concerns about increased raw material and product costs.

_MoO3 can be introduced as an impurity or phase separation suppressant. Furthermore, Mo is a component that can be contained in the electrode during the melting process; _MoO3 is dissolved through electrofusion heating and introduced into the molten glass. However, if a large amount of _MoO3 is introduced, the transmittance tends to decrease. Therefore, the _MoO3 content in the glass is preferably 0.01% or less, 0.007% or less, or 0.006% or less, and particularly preferably less than 0.002%.

The supporting glass substrate of this invention preferably has the following characteristics.

The average coefficient of thermal expansion within the temperature range of 30–380°C is preferably 40 × ^10⁻⁷ /°C or higher, 42 × ^10⁻⁷ /°C or higher, 44 × ^10⁻⁷ /°C or higher, and preferably 70 × ^10⁻⁷ /°C or lower, 65 × ^10⁻⁷ /°C or lower, 62 × ^10⁻⁷ /°C or lower, and preferably 60 ^{× 10⁻⁷} /°C or lower. If the average coefficient of thermal expansion within the temperature range of 30–380°C is not within the above range, it is difficult to match the coefficient of thermal expansion of the semiconductor chip, and the dimensional changes (especially warping deformation) of the processing substrate on the supporting glass substrate are easily generated during processing.

The preferred Young's modulus is 70 GPa or higher, 73 GPa or higher, or 75 GPa or higher, with an even better value of 77 GPa or higher. If the Young's modulus is too low, it is difficult to maintain the rigidity of the laminate, which can easily lead to deformation, warping, and damage to the substrate during processing. There is no particular upper limit to the Young's modulus; for example, it can be set to below 150 GPa, and especially below 130 GPa.

The liquid phase viscosity is preferably ^10⁻³.5 dPa·s or higher, ^10⁻⁴.0 dPa·s or higher, and especially preferably ^10⁻⁴.3 dPa·s or higher. This prevents the precipitation of devitrified crystals during molding, thus facilitating the formation of glass substrates using the pull-down method, particularly the overflow pull-down method. There is no particular upper limit to the liquid phase viscosity; for example, it can be set to ^10⁻⁸.0 dPa·s or lower.

The preferred temperatures for high-temperature viscosity 10 ^2.5 dPa·s are below 1400℃, 1380℃, 1360℃, 1340℃, 1320℃, and 1300℃, with an especially preferred temperature below 1280℃. If the temperature for high-temperature viscosity 10 ^2.5 dPa·s increases, the meltability decreases, leading to increased manufacturing costs for the glass substrate. Specifically, unmelted crystalline foreign matter can easily precipitate from the molten glass during melting, potentially reducing the mechanical strength and transmittance of the resulting support glass substrate, making it unsuitable as a support glass substrate. There is no particular limitation on the lower limit of the temperature for high-temperature viscosity 10 ^2.5 dPa·s; for example, it can be set to above 1000℃, especially above 1050℃.

The preferred transmittance T254 at 254 nm for a thickness of 1 mm, including reflection loss, is 5% or higher, 10% or higher, 20% or higher, and 25% or higher, with an especially good value of 30% or higher. If T254 is too low, it will be difficult to peel the processed substrate from the supporting glass substrate using light from the short-wavelength side after processing. There is no particular upper limit to T254; for example, it can be set to below 99.9%, below 99%, below 98%, and especially below 95%.

In this invention, the temperature at which the slope of the thermal expansion curve of glass changes is considered the glass transition point. The glass transition point is preferably above 630°C, and more preferably above 650°C. If the glass transition point is too low, the glass will flow excessively and be difficult to shape. Furthermore, if the glass transition point is too low, the glass will easily deform during high-temperature use. There is no particular upper limit to the glass transition point; it can also be set below 800°C, and especially below 750°C.

In this invention, the temperature at which the slope of the thermal expansion curve of the glass changes above the glass transition point is considered the yield point. The yield point is preferably above 700°C, and more preferably above 720°C. If the yield point is too low, the glass will flow excessively and be difficult to shape. Furthermore, the glass is prone to deformation at high temperatures. There is no particular upper limit to the yield point; it can also be set below 800°C, and especially below 750°C.

The optimal strain point is above 570°C or 590°C, with an even better value of above 610°C. If the strain point is too low, the glass is prone to unexpected deformation when a functional film is formed on the glass surface at high temperatures. There is no particular upper limit to the strain point; for example, it can be set below 800°C, especially below 750°C.

The optimal cooling point (equivalent to the temperature at which the glass viscosity is approximately ^10¹³ dPa·s) is above 600°C, and preferably above 650°C. If the cooling point is too low, the glass is prone to breakage during forming. Furthermore, if the cooling point is too low, the glass is prone to shrinkage over time, which can lead to adverse effects such as decreased dimensional accuracy. There is no particular upper limit to the cooling point; it can also be set below 750°C, and especially below 700°C.

The softening point (equivalent to the temperature at which the glass viscosity is approximately 10 ^7.6 dPa・s) is preferably above 800℃, and ideally above 820℃. If the softening point is too low, the glass is prone to deformation during high-temperature use. There is no particular upper limit to the softening point, and it can also be set below 950℃, especially below 900℃.

The density is preferably below 3.0 g/ ^cm³ , and preferably below 2.9 g/ ^cm³ . If the density is too high, the weight per unit area will increase, making handling difficult. There is no particular limitation on the lower limit of density; for example, it can be set above 2.0 g/ ^cm³ , especially above 2.2 g/ ^cm³ .

The optimal liquidus temperature is below 1100°C, and ideally below 1080°C. This helps prevent devitrification crystallization during glass manufacturing, which could lead to decreased productivity. There is no particular limitation on the lower limit of the liquidus temperature; it can be set above 850°C, and especially above 900°C. Furthermore, the liquidus temperature is an indicator of devitrification resistance; the lower the liquidus temperature, the better the devitrification resistance. The liquidus temperature (TL) is determined by placing glass powder that has passed through a standard sieve of 30 mesh (500 μm) and has residues at 50 mesh (300 μm) into a platinum boat and maintaining it in a temperature gradient furnace for 24 hours, then observing the precipitation temperature under a microscope. The liquid phase viscosity logη is the value obtained by measuring the glass viscosity at liquid phase temperature TL using the platinum ball dip method.

The supporting glass substrate of this invention is preferably a wafer shape with a diameter of 100 to 500 mm, a thickness of less than 2.0 mm, an overall thickness deviation (TTV) of less than 5 μm, and a warpage of less than 60 μm. The preferred shape is described below.

The supporting glass substrate of this invention is preferably wafer-shaped, with a diameter preferably between 100 and 500 mm, particularly 150 to 450 mm. This facilitates its application in the manufacturing process of fan-out type WLPs or CoWoSs. It can also be processed into shapes other than those described above, such as rectangular shapes, as required. This facilitates its application in the manufacturing process of fan-out type PLPs.

The preferred thickness of the plate is less than 2.0 mm, less than 1.5 mm, less than 1.2 mm, less than 1.1 mm, or less than 1 mm, with an even more preferred thickness of less than 0.9 mm. The thinner the plate, the lighter the mass of the laminate, thus improving its performance. On the other hand, if the plate is too thin, the strength of the supporting glass substrate itself decreases, making it difficult to perform its function as a supporting substrate. Therefore, the preferred thickness is more than 0.1 mm, more than 0.2 mm, more than 0.3 mm, more than 0.4 mm, more than 0.5 mm, or more than 0.6 mm, with an even more preferred thickness exceeding 0.7 mm.

The overall thickness deviation (TTV) is preferably below 5 μm, 4 μm, 3 μm, 2 μm, or 1 μm, and preferably 0.1 to less than 1 μm. Furthermore, the arithmetic mean roughness Ra is preferably below 20 nm, 10 nm, 5 nm, 2 nm, or 1 nm, and preferably below 0.5 nm. There is no particular limitation on the lower limit; for example, it can be set to 0.1 nm or higher. Higher surface finish makes it easier to improve the accuracy of processing. In particular, it improves wiring accuracy, thus enabling high-density wiring. Furthermore, it increases the strength of the supporting glass substrate, making the supporting glass substrate and laminate less prone to breakage. Consequently, it increases the number of times the supporting glass substrate can be reused. Furthermore, the "arithmetic mean roughness Ra" can be measured using a stylus surface roughness meter or an atomic force microscope (AFM).

Furthermore, the supporting glass substrate of this invention is preferably formed by grinding the surface after being formed using the overflow pull-down method. In this way, it is easy to limit the overall thickness deviation (TTV) to less than 2 μm, less than 1.5 μm, less than 1 μm, and especially 0.1 to less than 1 μm.

The preferred warpage is below 60 μm, below 55 μm, below 50 μm, or 1–45 μm, with an optimal range of 5–40 μm. A smaller warpage facilitates improved processing accuracy. It particularly enhances wiring accuracy, enabling high-density wiring.

The roundness is preferably below 1 mm, below 0.1 mm, below 0.05 mm, and especially below 0.03 mm. There is no particular limitation on the lower limit; for example, it can also be set above 0.001 mm. The smaller the roundness, the easier it is to apply to the manufacturing process of fan-out type WLP or CoWoS. Furthermore, "roundness" is the value obtained by subtracting the minimum value from the maximum value of the wafer's outer shape, excluding the notch area.

The supporting glass substrate of this invention preferably has a notch (a notch-shaped alignment portion), and more preferably, the depth of the notch is generally circular or generally V-shaped when viewed from above. This allows positioning pins or other positioning components to abut against the notch of the supporting glass substrate, facilitating the positioning of the supporting glass substrate. As a result, alignment between the supporting glass substrate and the processing substrate becomes easier. In particular, if a notch is also formed on the processing substrate and the positioning components abut against the notch, the overall alignment of the laminate becomes easier.

The supporting glass substrate of this invention is preferably formed using a pull-down method, particularly an overflow pull-down method. The overflow pull-down method involves allowing molten glass to overflow from both sides of a heat-resistant refractory channel-like structure. One side of the overflowing molten glass merges at the top of the channel-like structure, while the other side extends downwards to form the glass substrate. In the overflow pull-down method, the surface of the glass substrate should not contact the channel-like refractory material, but should be formed as a free surface. Therefore, with minimal grinding, the overall thickness variation (TTV) can be reduced to less than 2 μm, and especially less than 1 μm. This results in a lower manufacturing cost for the glass substrate.

The supporting glass substrate of this invention is preferably not subjected to ion exchange treatment, and preferably does not have a compressive stress layer on its surface. If ion exchange treatment is performed, the manufacturing cost of the supporting glass substrate increases significantly; therefore, by not performing ion exchange treatment, the manufacturing cost of the supporting glass substrate can be reduced. Furthermore, if ion exchange treatment is performed, it is difficult to reduce the overall thickness variation (TTV) of the supporting glass substrate; therefore, by not performing ion exchange treatment, this defect is easily eliminated. Moreover, the supporting glass substrate of this invention does not exclude the possibility of undergoing ion exchange treatment to form a compressive stress layer on its surface. If the focus is solely on improving mechanical strength, it is preferable to perform ion exchange treatment to form a compressive stress layer on the surface.

The laminate of this invention is characterized in that it is a laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate, wherein the supporting glass substrate is the aforementioned supporting glass substrate. Furthermore, it is preferable that the processing substrate at least has a semiconductor wafer molded with a sealing material. The glass substrate with the above configuration has a higher Young's modulus, thus easily maintaining the rigidity of the laminate and suppressing deformation, warping, and breakage of the processing substrate. Therefore, the laminate of this invention can suppress the degradation of processing reliability of the processing substrate.

In the laminate of this invention, it is preferable to have an adhesive layer between the processing substrate and the supporting glass substrate. The adhesive layer is preferably a resin, such as a thermosetting resin, a photocurable resin (especially a UV-curable resin), etc. Furthermore, it is preferable to have heat resistance capable of withstanding the heat treatment during the manufacturing process of fan-out packaging or CoWoS. This prevents the adhesive layer from melting during the manufacturing process of fan-out packaging or CoWoS, thereby improving the precision of the processing. Moreover, to facilitate the fixing of the processing substrate and the supporting glass substrate, a UV-curable tape can also be used as the adhesive layer.

In the laminate of this invention, it is preferable to further have a release layer between the processing substrate and the supporting glass substrate, more specifically between the processing substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. In this way, after the processing substrate has undergone the prescribed processing treatment, it is easy to peel the processing substrate from the supporting glass substrate. From a production point of view, the peeling of the processing substrate is preferably performed by irradiation with ultraviolet laser light or similar light.

Exfoliating layers include materials that undergo "intralayer peeling" or "interfacial peeling" when exposed to light such as laser light. Specifically, they include materials that, when irradiated with light of a certain intensity, experience a reduction or disappearance of the bonding forces between atoms or molecules, resulting in ablation and subsequent peeling. Furthermore, there are cases where, upon irradiation, components within the exfoliating layer are released as gases, thus separating; and where the exfoliating layer absorbs light, turns into a gas, and its vapor is released, leading to further separation.

In the laminate of this invention, it is preferable that the supporting glass substrate is larger than the processing substrate. In this way, when the processing substrate and the supporting glass substrate are supported, even if their centers are slightly offset, the edge of the processing substrate is unlikely to extend beyond the supporting glass substrate.

The method for manufacturing the laminate of this invention is characterized by including the following steps: preparing the aforementioned supporting glass substrate; preparing the processing substrate; and laminating the supporting glass substrate and the processing substrate to obtain the laminate. This enables the manufacture of a laminate that suppresses the degradation of processing reliability of the processing substrate.

The semiconductor packaging manufacturing method of the present invention is characterized by including the following steps: preparing the above-mentioned laminate; and processing the processing substrate. In other words, the semiconductor packaging manufacturing method of the present invention is characterized by including the following steps: at least preparing a processing substrate and a supporting glass substrate for supporting the processing substrate; and processing the processing substrate; and the supporting glass substrate is the above-mentioned supporting glass substrate.

The semiconductor packaging manufacturing method of this invention preferably includes a step of transporting the laminate. This improves the processing efficiency. Furthermore, the "step of transporting the laminate" and the "step of processing the substrate" do not need to be performed separately and can be performed simultaneously.

In the semiconductor packaging manufacturing method of the present invention, the processing is preferably performed by wiring on one surface of the processing substrate or by forming solder bumps on one surface of the processing substrate. In the semiconductor packaging manufacturing method of the present invention, the processing substrate is less likely to undergo dimensional changes when performing these processes, thus these steps can be performed appropriately.

In addition to the above, the processing can also be any one of the following: mechanical polishing of one surface of the processing substrate (usually the surface opposite to the supporting glass substrate), dry etching of one surface of the processing substrate (usually the surface opposite to the supporting glass substrate), or wet etching of one surface of the processing substrate (usually the surface opposite to the supporting glass substrate). Furthermore, in the semiconductor packaging manufacturing method of the present invention, the processing substrate is less prone to warping, and the rigidity of the laminate can be maintained. As a result, the above-mentioned processing can be performed appropriately.

The invention will be further explained with reference to the figures.

Figure 1 is a conceptual perspective view showing an example of the laminate 1 of the present invention. In Figure 1, the laminate 1 includes a supporting glass substrate 10 and a processing substrate 11. The supporting glass substrate 10 is attached to the processing substrate 11 to prevent dimensional changes in the processing substrate 11. A peeling layer 12 and an adhesive layer 13 are disposed between the supporting glass substrate 10 and the processing substrate 11. The peeling layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processing substrate 11.

That is, a supporting glass substrate 10, a release layer 12, an adhesive layer 13, and a processing substrate 11 are sequentially laminated in the laminate 1. The shape of the supporting glass substrate 10 is determined based on the processing substrate 11. In Figure 1, both the supporting glass substrate 10 and the processing substrate 11 are approximately circular. The release layer 12 can be, for example, a resin that is decomposed by laser irradiation. Alternatively, a substance that efficiently absorbs laser light and converts it into heat can be added to the resin. Examples include carbon black, graphite powder, microparticle metal powder, dyes, and pigments. The release layer 12 is formed by plasma CVD or rotational coating based on the sol-gel method. Next, layer 13 comprises resin, which is formed by coating using various methods such as printing, inkjet printing, spin coating, and roller coating. Alternatively, UV-curable tape can be used. After the supporting glass substrate 10 is peeled off from the processing substrate 11 by the release layer 12, layer 13 is dissolved and removed by solvent or the like. UV-curable tape can be removed by peeling tape after being irradiated with ultraviolet light.

Figures 2(a) to (g) are conceptual cross-sectional views illustrating the manufacturing steps of a fan-out package. Figure 2(a) shows the state where an adhesion layer 21 is formed on one surface of the support member 20. A release layer may also be formed between the support member 20 and the adhesion layer 21 as needed. Then, as shown in Figure 2(b), a plurality of semiconductor chips 22 are attached to the adhesion layer 21. At this time, the active side of the semiconductor chip 22 is brought into contact with the adhesion layer 21. Then, as shown in Figure 2(c), the semiconductor chip 22 is molded using a resin sealing material 23. The sealing material 23 uses a material with minimal dimensional changes after compression molding and during wire bonding. Then, as shown in Figures 2(d) and 2(e), after the processing substrate 24 with the molded semiconductor wafer 22 is separated from the support member 20, it is then fixed to the support glass substrate 26 via the adhesive layer 25. At this time, the surface of the processing substrate 24 that is opposite to the surface on the side where the embedded semiconductor wafer 22 is located is positioned on the side of the support glass substrate 26. This obtains a laminate 27. Furthermore, a peel layer may be formed between the adhesive layer 25 and the support glass substrate 26 as needed. Subsequently, after transporting the obtained laminate 27, as shown in Figure 2(f), wiring 28 is formed on the surface of the processing substrate 24 on the side where the embedded semiconductor wafer 22 is located, and then a plurality of solder bumps 29 are formed. Finally, after the processing substrate 24 separates from the supporting glass substrate 26, the processing substrate 24 is diced into individual semiconductor wafers 22 for subsequent packaging steps (Figure 2(g)). [Example 1]

The present invention will now be described based on embodiments. However, the following embodiments are merely illustrative. The present invention is not limited by any of the following embodiments.

Tables 1 and 2 show the embodiments (samples No. 1 to 17) and comparative examples (samples No. 18 and 19) of the present invention.

[Table 1] No.1 No.2 No. 3 No. 4 No. 5 No. 6 No. 7 No. 8 No. 9 No. 10 mol% SiO ₂ 56.8 58.5 58.6 57.2 58.0 58.2 56.0 56.9 55.6 57.6 _{Al₂O₃ ​} 9.6 9.7 9.7 9.7 9.8 9.6 9.5 9.7 9.0 9.6 _{B2O3 ​} 11.2 9.7 9.8 11.3 9.8 10.3 12.1 9.8 12.8 10.4 CaO 14.1 13.7 14.1 13.7 15.9 13.6 13.0 12.9 12.4 13.4 SrO 3.99 2.71 2.68 3.86 1.28 3.27 4.00 2.68 3.80 3.29 BaO 4.14 5.02 4.96 4.07 5.05 4.69 3.89 4.96 4.06 4.99 MgO 0.00 0.50 0.00 0.00 0.00 0.18 1.35 2.90 2.18 0.55 Li ₂ O 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 _Na₂O 0.033 0.026 0.017 0.025 0.026 0.020 0.018 0.019 0.018 0.023 K ₂ O 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 SnO ₂ 0.13 0.14 0.14 0.14 0.14 0.14 0.14 0.14 0.14 0.14 ZrO ₂ 0.005 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 ZnO 0.000 0.003 0.003 0.002 0.003 0.000 0.001 0.001 0.001 0.007 Cl 0.000 0.000 0.000 0.002 0.000 0.000 0.000 0.000 0.000 0.000 _{Fe₂O₃ ​} 0.002 0.001 0.000 0.001 0.001 0.000 0.001 0.000 0.001 0.000 total 100.000 100.000 100.000 100.000 100.000 100.000 100.000 100.000 100.000 100.000 _{B₂O₃ / Al₂O₃ ​} 1.1667 1.0000 1.0103 1.1649 1.0000 1.0729 1.2737 1.0103 1.4222 1.0833 SrO/BaO 0.9638 0.5398 0.5403 0.9484 0.2535 0.6972 1.0283 0.5403 0.9360 0.6593 _Li₂O + _Na₂O + _K₂O 0.0330 0.0260 0.0170 0.0250 0.0260 0.0200 0.0180 0.0190 0.0180 0.0230 density g/cm ³ 2.75 2.75 2.75 2.74 2.73 2.74 2.73 2.76 2.73 2.76 Yang's Modulus GPa 81 80 80 80 80 80 80 81 80 80 Average coefficient of thermal expansion (30–380°C) × ^10⁻⁷ /℃ 54 53 53 53 53 53 53 54 54 54 Glass transfer point ℃ 687 687 685 684 686 682 677 682 674 681 Subjugation point ℃ 740 743 745 738 740 740 732 741 728 740 Strain point ℃ 640 640 641 638 641 639 633 638 629 638 Xu Lengdian ℃ 681 683 684 680 683 681 674 681 669 679 softening point ℃ 848 860 860 850 857 856 842 856 834 853 Transmittance (254 nm) % 32 40 40 36 37 39 36 38 41 34 Viscosity 10 ^{^4.0} ℃ 1091 1111 1113 1094 1104 1107 1081 1100 1067 1099 Viscosity 10 ^{^3.0} ℃ 1225 1247 1251 1227 1238 1245 1211 1230 1194 1233 Viscosity 10 ^{^2.5} ℃ 1313 1337 1343 1317 1329 1335 1298 1316 1280 1322 Viscosity 10 ^{^2.0} ℃ 1426 1449 1456 1428 1440 1449 1407 1425 1388 1432 Liquid phase viscosity logη 4.9 5.1 5.1 5.0 5.3 5.3 5.3 4.7 4.9 4.9 liquid phase temperature ℃ 1008 1013 1007 1000 988 993 970 1031 989 1018 Are there any unmelted crystalline foreign objects? without without without without without without without without without without

[Table 2] No. 11 No. 12 No. 13 No. 14 No. 15 No. 16 No. 17 No. 18 No. 19 mol% SiO ₂ 57.5 56.1 56.8 55.5 55.5 56.1 56.2 70.1 66.0 _{Al₂O₃ ​} 9.6 9.6 9.7 9.4 9.5 9.6 9.6 4.9 9.0 _{B2O3 ​} 10.5 11.4 11.5 12.4 12.3 11.6 11.9 5.5 4.0 CaO 13.3 13.5 13.4 12.9 13.4 13.4 12.6 9.7 14.8 SrO 3.22 3.84 3.85 3.97 3.95 4.13 4.38 4.76 0.00 BaO 4.97 4.06 4.58 4.36 3.88 3.79 4.10 4.90 0.50 MgO 0.75 1.33 0.00 1.30 1.30 1.21 1.03 0.00 5.50 Li ₂ O 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 _Na₂O 0.020 0.027 0.018 0.018 0.029 0.028 0.036 0.048 0.033 K ₂ O 0.000 0.000 0.000 0.000 0.000 0.000 0.002 0.001 0.001 SnO ₂ 0.14 0.14 0.15 0.15 0.14 0.14 0.15 0.09 0.15 ZrO ₂ 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.015 ZnO 0.000 0.002 0.001 0.001 0.000 0.001 0.000 0.000 0.000 Cl 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000 _{Fe₂O₃ ​} 0.000 0.001 0.001 0.001 0.001 0.001 0.002 0.001 0.001 total 100.000 100.000 100.000 100.000 100.000 100.000 100.000 100.000 100.000 _{B₂O₃ / Al₂O₃ ​} 1.0938 1.1875 1.1856 1.3191 1.2947 1.2083 1.2396 1.1224 0.4444 SrO/BaO 0.6479 0.9458 0.8406 0.9106 1.0180 1.0897 1.0683 0.9714 0.0000 _Li₂O + _Na₂O + _K₂O 0.0200 0.0270 0.0180 0.0180 0.0290 0.0280 0.0380 0.0490 0.0340 density g/cm ³ 2.76 2.74 2.75 2.75 2.73 2.74 2.74 2.73 Undetermined Yang's Modulus GPa 80 81 80 81 80 81 80 78 83 Average coefficient of thermal expansion (30–380°C) × ^10⁻⁷ /℃ 54 54 54 54 54 54 54 52 44 Glass transfer point ℃ 683 678 683 678 674 677 678 684 Undetermined Subjugation point ℃ 742 737 737 729 731 733 737 747 Undetermined Strain point ℃ 637 634 636 630 632 634 635 654 679 Xu Lengdian ℃ 679 675 677 670 672 675 676 699 727 softening point ℃ 851 844 846 836 838 842 844 Undetermined 938 Transmittance (254 nm) % 45 38 37 52 61 61 61 Undetermined Undetermined Viscosity 10 ^{^4.0} ℃ 1098 1082 1090 1073 1076 1080 1082 1195 1228 Viscosity 10 ^{^3.0} ℃ 1229 1211 1221 1200 1202 1208 1212 1360 1375 Viscosity 10 ^{^2.5} ℃ 1317 1298 1309 1285 1288 1293 1299 1438 1477 Viscosity 10 ^{^2.0} ℃ 1428 1406 1421 1391 1395 1400 1406 1637 1587 Liquid phase viscosity logη 4.8 4.9 5.0 5.0 5.1 5.1 5.2 <3.6 Undetermined liquid phase temperature ℃ 1021 1003 998 988 982 985 978 >1256 Undetermined Are there any unmelted crystalline foreign objects? without without without without without without without have have

First, the glass batch, prepared according to the glass composition shown in the table, is placed in a 300 cc platinum crucible and melted at 1400–1700°C for 3–24 hours. While the glass batch is melting, it is stirred with a platinum stirrer to homogenize it. Then, the molten glass is poured onto a carbon plate, formed into a plate shape, and then slowly cooled to room temperature (30°C) at a temperature approximately 20°C above its slow cooling point at a rate of 3°C/minute. For each obtained sample, the following parameters were evaluated: density, Young's modulus, average coefficient of thermal expansion in the temperature range of 30–380 °C, glass transition point, yield point, strain point, cooling point, softening point, transmittance at 254 nm (converted to a thickness of 1 mm), temperature at a high temperature viscosity of ^10⁴ dPa·s, temperature at a high temperature viscosity of ^10⁴ dPa·s, temperature at a high temperature viscosity of 10⁴ dPa·s, temperature at a high temperature viscosity of 10⁴ ^2.5 dPa·s, temperature at a high temperature viscosity of 10⁴ ^2.0 dPa·s, liquid phase viscosity, and liquid phase temperature.

Next, we will conduct an evaluation assuming actual production. Specifically, we will prepare a glass batch by mixing the glass raw materials in a manner that achieves the glass composition in the table, and then produce glass in a 50 L platinum crucible under the same melting conditions as described above, to confirm whether there are any unmelted crystalline foreign matter in the glass.

Density is a value measured using the well-known Archimedes method.

The Young's modulus is a value measured using the resonance method.

The average coefficient of thermal expansion, glass transition point, and yield point within the temperature range of 30–380℃ are values obtained by measuring the thermal expansion gauge.

The strain point, cooling point, and softening point are values measured based on the method of ASTM C336.

The transmittance at 254 nm for a thickness of 1 mm includes the reflection loss measured using a double-beam spectrophotometer. The test samples were optically polished (mirror-like) with both surfaces ground. Furthermore, the surface roughness Ra of the glass surfaces of these test samples was measured using AFM, and the results showed a range of 0.5–1.0 nm within a 5 μm × 5 μm measurement area.

The temperatures at high-temperature viscosities of ^10⁴.0 dPa·s, ^10⁴.3.0 dPa·s, ^10⁴.2.5 dPa·s, and ^10⁴.2.0 dPa·s were measured using the platinum ball pull method.

The liquidus temperature is defined as the temperature at which crystallization occurs when glass powder that has passed through a standard sieve (30 mesh, 500 μm) and has residues at a 50 mesh, is placed in a platinum boat and kept in a temperature gradient furnace for 24 hours. The crystallization temperature is then determined by microscopic observation. The liquidus viscosity, logη, is the glass viscosity at the liquidus temperature TL determined using the platinum ball pulling method.

The presence of unmelted crystalline foreign matter was confirmed by observing the obtained plate-shaped glass using an optical microscope (200x). Furthermore, observations were made at five random, non-repeating locations.

No unmelted crystalline foreign matter was found in samples No. 1 to 17. Furthermore, the temperature at a high-temperature viscosity of 10 ^2.5 dPa·s was below 1400°C. Therefore, it is considered that the glass in samples No. 1 to 17 has higher meltability, which can prevent a decrease in the mechanical strength of the obtained supporting glass substrate. Also, since no unmelted crystalline foreign matter was found, it is considered that a decrease in transmittance on the short-wavelength side can be avoided. In summary, samples No. 1 to 17 are considered suitable as supporting glass substrates. On the other hand, samples No. 18 and 19 were considered unsuitable as supporting glass substrates because unmelted crystalline foreign matter precipitated. [Example 2]

First, glass raw materials were prepared according to the glass composition of samples No. 1 to 17 listed in the table, and then fed into a glass melting furnace to melt at 1400–1700°C. The molten glass was then fed into an overflow drawing forming device and formed into plates with a thickness of 0.8 mm. The obtained glass substrates were then mechanically ground on both surfaces to reduce the total thickness deviation (TTV) to less than 1 μm. After the obtained glass substrates were processed to a thickness of ϕ300 mm × 0.8 mm, their two surfaces were ground using a grinding device. Specifically, the two surfaces of the glass substrate were clamped by a pair of grinding pads with different outer diameters, and the glass substrate was rotated together with the pair of grinding pads while the two surfaces of the glass substrate were ground. During the polishing process, the process is controlled by occasionally allowing a portion of the glass substrate to extend beyond the polishing pad. Furthermore, the polishing pad is made of polyurethane, and the average particle size of the polishing slurry used is 2.5 μm, with a polishing speed of 15 m/min. For each polished glass substrate, the total thickness deviation (TTV) and warpage were measured using a Bow/Warp measuring device SBW-331M/Ld manufactured by Kobelco Research Institute. The results showed that the total thickness deviation (TTV) was less than 0.85 μm and the warpage was less than 35 μm.

1,27: Laminate; 10,26: Supporting glass substrate; 11,24: Processing substrate; 12: Release layer; 13,21,25: Adhesive layer; 20: Support component; 22: Semiconductor wafer; 23: Sealing material; 28: Wiring; 29: Solder bump.

Figure 1 is a conceptual perspective view showing an example of the laminate of the present invention. Figures 2(a) to (g) are conceptual cross-sectional views showing the manufacturing steps of a fan-out package.

1: Laminated body

10: Supports glass substrates

11: Processing substrate

12: Delamination

13: Next layer

Claims (23)

A support glass substrate for supporting a processed substrate, and as a glass composition, containing, in _molar percentage, 47-65% _SiO2 , 5-15% _Al2O3 , 5-20% _B2O3 , 6-25% CaO, 1-15% _SrO , and 1-15% BaO, and having a molar ratio of _{B2O3 / Al2O3} of ₁ or more. For example, the supporting glass substrate in Request 1 has a molar ratio of SrO/BaO of 0.5 to 5. For the supporting glass substrate of Request 1 or 2, the content of CaO is greater than that of SrO, and the content of CaO is greater than that of BaO, expressed in moles (%). For the supporting glass substrate of Request 1 or 2, the content of CaO, expressed in moles, is greater than that of MgO. The supporting glass substrate of Request 1 or 2 contains 0-5% MgO in moles. The supporting glass substrate of Request 1 or 2 contains 0-1% _Li₂O + _Na₂O + _K₂O in moles. The supporting glass substrate of Request 1 or 2 contains 0 to 1% _Na₂O in moles. The supporting glass substrate of Request 1 or 2 contains 0 to 1% _SnO2 in moles. The supporting glass substrate of Request 1 or 2 contains 0 to 1% _ZrO2 in moles. For example, the supporting glass substrate of request item 1 or 2, wherein the Young's modulus is 70 GPa or higher. For example, the supporting glass substrate of request item 1 or 2, wherein the average coefficient of thermal expansion in the temperature range of 30℃ to 380℃ is 40× ^10⁻⁷ /℃ to 70× ^10⁻⁷ /℃. For example, the supporting glass substrate of request item 1 or 2, wherein the liquid phase viscosity is 10 ^3.5 dPa・s or higher. For example, the supporting glass substrate of request item 1 or 2, wherein the temperature at a high temperature viscosity of 10 ^2.5 dPa・s does not reach 1400°C. For example, the supporting glass substrate of Request 1 or 2, wherein the transmittance, including reflection loss, at 254 nm with a thickness of 1 mm is 5% or more. The supporting glass substrate of Request 1 or 2 has a wafer shape with a diameter of 100 to 500 mm, a thickness of less than 2.0 mm, an overall thickness deviation (TTV) of less than 5 μm, and a warpage of less than 60 μm. The supporting glass substrate of Request 1 or 2 has a generally rectangular shape with at least one side being more than 300 mm, a thickness of less than 2.0 mm, an overall thickness deviation of less than 5 μm, and a warping of less than 60 μm. For example, the supporting glass substrates in Request 1 or 2, used for fan-out wafer-level packaging or fan-out panel-level packaging. A laminate having at least a processing substrate and a support glass substrate for supporting the processing substrate, wherein the support glass substrate is the support glass substrate as claimed in claim 1 or 2. As in claim 18, the laminate wherein the aforementioned processing substrate has at least a semiconductor wafer molded with a sealing material. A method for manufacturing a laminate includes the following steps: preparing a support glass substrate as claimed in claim 1 or 2; preparing a processing substrate; and laminating the support glass substrate and the processing substrate to obtain a laminate. A method for manufacturing a semiconductor package includes the following steps: preparing a multilayer as claimed in claim 18; and processing the aforementioned substrate. The semiconductor packaging manufacturing method of claim 21, wherein the above processing includes a step of wiring on one surface of the above processing substrate. The semiconductor packaging manufacturing method of claim 21, wherein the above processing includes the step of forming solder bumps on one surface of the above processing substrate.