TW201908242A - 洗淨水供給裝置 - Google Patents
洗淨水供給裝置 Download PDFInfo
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- TW201908242A TW201908242A TW107110606A TW107110606A TW201908242A TW 201908242 A TW201908242 A TW 201908242A TW 107110606 A TW107110606 A TW 107110606A TW 107110606 A TW107110606 A TW 107110606A TW 201908242 A TW201908242 A TW 201908242A
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 238000005406 washing Methods 0.000 title claims description 100
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 41
- 239000012498 ultrapure water Substances 0.000 claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 239000003002 pH adjusting agent Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 238000005342 ion exchange Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000003456 ion exchange resin Substances 0.000 claims description 3
- 229920003303 ion-exchange polymer Polymers 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000001172 regenerating effect Effects 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000011084 recovery Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 23
- 239000003814 drug Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 15
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000012528 membrane Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 238000007872 degassing Methods 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F9/00—Multistage treatment of water, waste water or sewage
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- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/68—Treatment of water, waste water, or sewage by addition of specified substances, e.g. trace elements, for ameliorating potable water
- C02F1/685—Devices for dosing the additives
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- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/469—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis
- C02F1/4693—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis electrodialysis
- C02F1/4695—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis electrodialysis electrodeionisation
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- C02F1/72—Treatment of water, waste water, or sewage by oxidation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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Abstract
洗淨水供給裝置係具有:超純水以定量流通的超純水線路(1);在該超純水線路定量添加溶質,來製造洗淨水的製造部(2);用以流通洗淨水的洗淨水線路(3);由該洗淨水線路(3)被供給洗淨水的洗淨機(5A~5N);剩餘的洗淨水由洗淨水線路(3)被導入的溶質去除部(4);及用以將溶質已被去除的回收水送回至槽等的回收線路(6)。
Description
本發明係關於在超純水添加pH調整劑、氧化還原電位調整劑等,製造且供給半導體晶圓等的洗淨水的裝置者,尤其係關於適於製造且供給以極低濃度含有pH調整劑、氧化還原電位調整劑等溶質的晶圓洗淨水的裝置。
在半導體晶圓的洗淨/清洗水工程中,在抑制晶圓的帶電、金屬腐蝕/熔解、微粒子附著的目的下,有使用使酸或鹼的pH調整劑、或如氧化劑或還原劑般的氧化還原電位調整劑,以所需最低限度之極低濃度溶解於超純水的水質調整水作為洗淨水(包含清洗水)的情形(例如專利文獻1)。以該洗淨水的製造方法而言,亦有使H2
、O3
、CO2
、NH3
等還原性、氧化性、酸性、或鹼性的氣體溶解於超純水的方法,但是由於操作簡便,因此大多採用一種將使pH調整劑及/或氧化還原電位調整劑溶解於水的藥液進行藥注的方法。以藥液的藥注方法而言,有使用泵的方法、使用藉由密閉容器與N2
等惰性氣體所為之加壓的方法,任一方法均被實用化。
若超純水的流量一定,雖然容易以成為所希望濃度的方式添加溶質,但是在實際上使用稀薄洗淨水的洗淨機中,以複數閥的開閉控制被注入至晶圓的水的供給/停止,流量會不規則變動。
即使超純水流動變動,亦以稀薄洗淨水的溶質濃度在所希望範圍內的方式,進行對超純水流量的比例控制、接受濃度監視器的訊號的PID控制等藉由各種手法所為之溶質添加控制。但是,尤其在具有複數洗淨腔室的單片式洗淨機中,並無法實現可充分追隨不規則的流量變動的溶質添加控制,結果有被注入至晶圓的洗淨水/清洗水的液質大幅背離目的值的情形。
亦有一種使液質安定化優先且以一定條件製造且持續供給稀薄洗淨水的單純方法,但是此時會使剩餘水直接照原樣流出。在最近的多腔室單片洗淨機中,瞬間成為必要的最大流量與最低流量的差大,若連續供給最大流量以上的洗淨水,會排出相當量的剩餘水,在對用排水設備的負擔、藥液的過度使用/排出方面造成問題。
專利文獻1:日本特開2016-139766號公報
本發明之目的在提供可安定供給適於供給至半導體用晶圓等的洗淨/清洗工程之含有鹼/氧化劑等極低濃度的溶質的洗淨水的洗淨水供給裝置。
本發明之洗淨水供給裝置係具有:超純水線路;及在來自該超純水線路的超純水添加pH調整劑及/或氧化還原電位調整劑,來製造一定濃度的洗淨水的洗淨水製造部的洗淨水供給裝置,其特徵為:具備有:由洗淨水製造部供給至洗淨機的洗淨水線路;及將溶質由來自該洗淨水線路的剩餘洗淨水去除的去除部。
在本發明之一態樣中,前述洗淨水製造部係具有:對前述超純水線路定量供給超純水的手段、及對超純水定量供給溶質的手段。
在本發明之一態樣中,在前述洗淨水線路連接有複數洗淨機,前述洗淨水製造部係可製造比全部洗淨機的最大使用量的合計為更多量的洗淨水。
在本發明之一態樣中,前述去除部係具備有:離子交換樹脂、電氣再生式離子交換裝置、或鉑奈米膠體擔載樹脂。 (發明之效果)
在本發明中,在洗淨水製造部,對以一定流量流通的超純水定量添加溶質,藉此以高精度製造成為一定濃度的洗淨水。該一定濃度的洗淨水被供給至晶圓洗淨機,剩餘的洗淨水係在溶質去除部被去除,且超純水被回收。剩餘的洗淨水中的溶質及濃度為已知,而且溶質成分的種類亦少,因此可輕易且充分地將溶質由剩餘洗淨水去除。
藉由本發明,在多數閥不規則開閉的多腔室單片式洗淨機中,可實現將在洗淨/清洗工程中極為重要的液質精度佳而安定地保持為所希望的值的供給,而且可消除剩餘水的排出而防止超純水的浪費使用。
以下參照圖示,詳加說明本發明。
圖1係顯示本發明之洗淨水供給裝置之實施形態之一例的系統圖。
該洗淨水供給裝置係用以在超純水添加pH調整劑及/或氧化還原電位調整劑等來製造水質調整水,且供給至洗淨機者,具有:超純水以定量流通的超純水線路1;在該超純水線路定量添加溶質來製造洗淨水的製造部2;用以流通洗淨水的洗淨水線路3;由該洗淨水線路3供給洗淨水的第1至第n的n個洗淨機5A、5B、…5N;剩餘的洗淨水由洗淨水線路3被導入的溶質去除部4;及用以將溶質已被去除的回收水送回至槽等的回收線路6等。
對洗淨機5A、5B至5N,分別由洗淨水線路3透過分叉配管7、閥8、泵9、配管10供給洗淨水。亦可在配管10設置過濾器。回流配管11係由配管10分叉出,該回流配管11的末端側係連接於洗淨水線路3。在回流配管11設有閥12。
在超純水線路1係藉由具備有定量泵、定流量閥、流量控制裝置等的定量供給裝置,以一定流量流通超純水。在製造部2係以一定供給量在超純水添加溶質,藉此,以高精度,成為目的濃度的洗淨水透過洗淨水線路3而朝向各洗淨機5A~5N供給。
在圖2~6中顯示洗淨水製造部2的構成之一例。
在圖2中,洗淨水製造部係由藥液槽15、藥注泵16、及藥注配管17所構成。在藥液槽15內係收容有pH調整劑、氧化還原電位調整劑等1種以上以預定濃度溶解的藥液。以藥注泵16而言,係使用定量泵或附流量控制裝置的泵。亦可設置2以上由藥液槽15、藥注泵16、及藥注配管17所成之藥注單元。
在圖3中,洗淨水製造部係具備有:用以去除氧等氣體成分的除氣裝置20、及膜式氣體溶解裝置21。除氣裝置20在本實施形態中係具有膜20a的膜式除氣裝置,構成為將以膜20a間隔的氣相室內藉由真空泵22等減壓手段進行減壓。但是,除氣裝置亦可為膜除氣裝置以外。
氣體溶解裝置21在本實施形態中為膜式溶解裝置。在以氣體透過膜21a間隔的氣相室內,透過配管23被定量供給用以溶解在超純水中的氣體。
由該配管23被供給至氣體溶解裝置21的氣體係包含1或2種以上的溶解目的成分氣體。被供給至氣體溶解裝置21的氣體亦可為僅由1種或2種以上的目的成分氣體所成者,亦可為目的成分氣體與惰性氣體的定量比的混合氣體。
其中,亦可使用膜式氣體溶解裝置以外之射出器等直接氣液接觸式氣體溶解裝置。
圖4的洗淨水製造部係具備有:圖2的藥液槽15、藥注泵16、藥注配管17、及圖3的除氣裝置20及氣體溶解裝置12之雙方。
圖5的洗淨水製造部在圖2中,係在超純水線路1設有過氧化氫去除裝置25者,其他構成係與圖2相同。藉由設置過氧化氫去除裝置25,可精度佳地控制洗淨水中的氧化劑的量。
在圖2、4、5中,係將藥液槽15內的藥液,藉由藥注泵16而藥注至超純水線路1,但是亦可如圖6所示構成為對藥液槽15定量供給氮氣等惰性氣體而將藥液定量添加在超純水線路1。圖6係與圖2相關連者,圖4、5亦可構成為相同。
由製造部2被供給至洗淨水線路3的洗淨水量係比被供給至各洗淨機5A~5N的洗淨水量的最大量的合計量為更多,較佳為該合計量的120%以上。
在本發明中,藥注至超純水的藥液係使pH調整劑及/或氧化還原電位調整劑溶解在超純水來進行調製的藥液,以該pH調整劑而言,可使用:鹽酸、醋酸、硝酸、磷酸、硫酸、氫氟酸、氨、氫氧化鈉、氫氧化鉀、四甲基氫氧化銨、或碳酸銨等。
此外,以氧化還原電位調整劑而言,係可使用過氧化氫或硝酸。
本發明中所使用的藥液通常係以20~48重量%左右的濃度含有該等藥劑者,將如上所示之藥液藥注至超純水,通常製造藥劑濃度0.1~100mg/L左右的洗淨水。
以溶解於超純水的氣體而言,例示H2
、O3
、CO2
、NH3
等。該等濃度亦通常形成為ppm級例如50ppm以下,尤其20ppm以下的稀薄濃度。
如上所述,在本發明中,製造部2中的酸、鹼、氧化劑、還原劑等的溶解係可直接適用習知之藥注機構或氣體溶解機構。亦即,若為藥注,以藉由泵或N2
等惰性氣體所為之壓送,若為氣體溶解,以藉由氣體透過膜模組或射出器等所為之氣液接觸操作,以成為所希望的溶質濃度的方式使其溶解。
去除部4中的剩餘水的處理係可僅以離子交換樹脂或鉑族觸媒對應。亦即,ppm級的酸/鹼係可以離子交換裝置輕易去除。亦可適用電氣再生式離子交換裝置(所謂EDI)。在氧化劑/還原劑的去除係以鉑奈米膠體擔載樹脂等觸媒為有效。若有含較多臭氧的剩餘水,以追加適於臭氧分解的觸媒為宜。
來自洗淨水線路3的剩餘洗淨水中的溶質濃度非常低,為ppm級,此外,溶質種類亦受限,因此輕易將溶質充分去除,以簡單的離子交換裝置與觸媒裝置的組合,恢復到接近超純水的純度。因此,在去除部4去除溶質後的回收水係可導至剩餘超純水的回流配管或超純水槽,可不浪費地再利用。
上述實施形態係本發明之一例,本發明亦可形成為上述以外的形態。在上述實施形態中係設置有複數(N個)洗淨機5A~5N,但是亦可如圖7所示洗淨機係僅設置1台。
以上使用特定態樣詳細說明本發明,惟在不脫離本發明之意圖與範圍的情形下可作各種變更,為該領域熟習該項技術者清楚可知。 本申請案係根據2017年4月14日所申請之日本專利申請案2017-080626,藉由引用而沿用其全體。
1‧‧‧超純水線路
2‧‧‧洗淨水製造部
3‧‧‧洗淨水線路
4‧‧‧去除部
5、5A~5N‧‧‧洗淨機
6‧‧‧回收線路
7‧‧‧分叉配管
8‧‧‧閥
9‧‧‧泵
10‧‧‧配管
11‧‧‧回流配管
12‧‧‧閥
15‧‧‧藥液槽
16‧‧‧藥注泵
17‧‧‧藥注配管
20‧‧‧除氣裝置
20a‧‧‧膜
21‧‧‧氣體溶解裝置
21a‧‧‧氣體透過膜
22‧‧‧真空泵
23‧‧‧配管
25‧‧‧過氧化氫去除裝置
圖1係顯示本發明之洗淨水供給裝置之實施形態之一例的系統圖。 圖2係洗淨水製造部的構成圖。 圖3係洗淨水製造部的構成圖。 圖4係洗淨水製造部的構成圖。 圖5係洗淨水製造部的構成圖。 圖6係洗淨水製造部的構成圖。 圖7係顯示本發明之洗淨水供給裝置之實施形態之一例的系統圖。
Claims (4)
- 一種洗淨水供給裝置,其係具有:超純水線路;及在來自該超純水線路的超純水添加pH調整劑及/或氧化還原電位調整劑,來製造一定濃度的洗淨水的洗淨水製造部的洗淨水供給裝置,其特徵為: 具備有: 由洗淨水製造部供給至洗淨機的洗淨水線路;及 將溶質由來自該洗淨水線路的剩餘洗淨水去除的去除部。
- 如申請專利範圍第1項之洗淨水供給裝置,其中,前述洗淨水製造部係具有:對前述超純水線路定量供給超純水的手段、及對超純水定量供給溶質的手段。
- 如申請專利範圍第1項或第2項之洗淨水供給裝置,其中,在前述洗淨水線路連接有複數洗淨機,前述洗淨水製造部係可製造比全部洗淨機的最大使用量的合計為更多量的洗淨水。
- 如申請專利範圍第1項至第3項中任一項之洗淨水供給裝置,其中,前述去除部係具備有:離子交換樹脂、電氣再生式離子交換裝置、或鉑奈米膠體擔載樹脂。
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| JP6947267B1 (ja) * | 2020-09-14 | 2021-10-13 | 栗田工業株式会社 | 電子部品・部材の洗浄水供給装置及び電子部品・部材の洗浄水の供給方法 |
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| TWI260309B (en) * | 2001-12-12 | 2006-08-21 | Ind Tech Res Inst | System and method for removing organic substances in waste water by oxidation |
| JP2003334433A (ja) | 2002-05-16 | 2003-11-25 | Kurita Water Ind Ltd | 連続溶解装置、連続溶解方法及び気体溶解水供給装置 |
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| JP5124946B2 (ja) | 2006-01-12 | 2013-01-23 | 栗田工業株式会社 | 超純水製造装置における超純水中の過酸化水素の除去方法 |
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| JP5329463B2 (ja) | 2009-03-18 | 2013-10-30 | オルガノ株式会社 | 過酸化水素分解処理水の製造方法、過酸化水素分解処理水の製造装置、処理槽、超純水の製造方法、超純水の製造装置、水素溶解水の製造方法、水素溶解水の製造装置、オゾン溶解水の製造方法、オゾン溶解水の製造装置および電子部品の洗浄方法 |
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| JP5750236B2 (ja) | 2010-05-25 | 2015-07-15 | オルガノ株式会社 | 純水製造方法及び装置 |
| JP6423211B2 (ja) | 2013-09-25 | 2018-11-14 | オルガノ株式会社 | 基板処理方法および基板処理装置 |
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| JP6430772B2 (ja) * | 2014-10-06 | 2018-11-28 | オルガノ株式会社 | 炭酸ガス溶解水供給システム、炭酸ガス溶解水供給方法、およびイオン交換装置 |
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