TW201835965A - 電子束裝置及曝光方法、以及元件製造方法 - Google Patents
電子束裝置及曝光方法、以及元件製造方法 Download PDFInfo
- Publication number
- TW201835965A TW201835965A TW107106154A TW107106154A TW201835965A TW 201835965 A TW201835965 A TW 201835965A TW 107106154 A TW107106154 A TW 107106154A TW 107106154 A TW107106154 A TW 107106154A TW 201835965 A TW201835965 A TW 201835965A
- Authority
- TW
- Taiwan
- Prior art keywords
- electron beam
- beam apparatus
- optical system
- light
- optical
- Prior art date
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 286
- 238000000034 method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 429
- 238000006243 chemical reaction Methods 0.000 claims description 44
- 238000009826 distribution Methods 0.000 claims description 38
- 238000005286 illumination Methods 0.000 claims description 34
- 238000005520 cutting process Methods 0.000 claims description 26
- 230000001678 irradiating effect Effects 0.000 claims description 24
- 230000008859 change Effects 0.000 claims description 23
- 238000001459 lithography Methods 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 16
- 230000004075 alteration Effects 0.000 claims description 15
- 238000005192 partition Methods 0.000 claims description 13
- 230000009467 reduction Effects 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 5
- 230000005693 optoelectronics Effects 0.000 claims description 5
- 238000007493 shaping process Methods 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 75
- 239000002775 capsule Substances 0.000 description 41
- 239000011295 pitch Substances 0.000 description 28
- 239000000758 substrate Substances 0.000 description 23
- 238000012937 correction Methods 0.000 description 21
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000007687 exposure technique Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013256 coordination polymer Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
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- 239000004065 semiconductor Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 240000004244 Cucurbita moschata Species 0.000 description 1
- 235000009854 Cucurbita moschata Nutrition 0.000 description 1
- 235000009852 Cucurbita pepo Nutrition 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP2017-034195 | 2017-02-24 | ||
| JP2017034195 | 2017-02-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201835965A true TW201835965A (zh) | 2018-10-01 |
Family
ID=63252709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107106154A TW201835965A (zh) | 2017-02-24 | 2018-02-23 | 電子束裝置及曝光方法、以及元件製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW201835965A (fr) |
| WO (1) | WO2018155537A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI813948B (zh) * | 2020-02-21 | 2023-09-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | 帶電粒子評估工具及檢測方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10937630B1 (en) | 2020-04-27 | 2021-03-02 | John Bennett | Modular parallel electron lithography |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5684360A (en) * | 1995-07-10 | 1997-11-04 | Intevac, Inc. | Electron sources utilizing negative electron affinity photocathodes with ultra-small emission areas |
| DE69904881T2 (de) * | 1998-07-01 | 2003-10-30 | Asml Netherlands B.V., Veldhoven | Projektionsbelichtungsgerät |
| JP2003511855A (ja) * | 1999-09-30 | 2003-03-25 | エテック システムズ インコーポレイテッド | 多荷電粒子ビーム放射コラムのアレイ |
| US6828574B1 (en) * | 2000-08-08 | 2004-12-07 | Applied Materials, Inc. | Modulator driven photocathode electron beam generator |
| JP4514998B2 (ja) * | 2001-07-27 | 2010-07-28 | 浜松ホトニクス株式会社 | 電子線発生装置及び光電面収容カートリッジ |
| KR20050044369A (ko) * | 2001-11-07 | 2005-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 마스크없는 광자-전자 스팟-그리드 어레이 프린터 |
| JP4945763B2 (ja) * | 2005-05-17 | 2012-06-06 | 国立大学法人京都大学 | 電子ビーム露光装置 |
| JP5988537B2 (ja) * | 2010-06-10 | 2016-09-07 | 株式会社ニコン | 荷電粒子線露光装置及びデバイス製造方法 |
| US20120223245A1 (en) * | 2011-03-01 | 2012-09-06 | John Bennett | Electron beam source system and method |
-
2018
- 2018-02-22 WO PCT/JP2018/006391 patent/WO2018155537A1/fr not_active Ceased
- 2018-02-23 TW TW107106154A patent/TW201835965A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI813948B (zh) * | 2020-02-21 | 2023-09-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | 帶電粒子評估工具及檢測方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018155537A1 (fr) | 2018-08-30 |
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