TW201826392A - Process for producing layered product and process for producing electronic device - Google Patents
Process for producing layered product and process for producing electronic device Download PDFInfo
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- TW201826392A TW201826392A TW106128195A TW106128195A TW201826392A TW 201826392 A TW201826392 A TW 201826392A TW 106128195 A TW106128195 A TW 106128195A TW 106128195 A TW106128195 A TW 106128195A TW 201826392 A TW201826392 A TW 201826392A
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- 238000000034 method Methods 0.000 title claims abstract description 348
- 230000008569 process Effects 0.000 title claims abstract description 286
- 239000011342 resin composition Substances 0.000 claims abstract description 190
- 229910052751 metal Inorganic materials 0.000 claims abstract description 89
- 239000002184 metal Substances 0.000 claims abstract description 89
- 238000010438 heat treatment Methods 0.000 claims abstract description 82
- 238000011161 development Methods 0.000 claims abstract description 57
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 41
- 150000001875 compounds Chemical class 0.000 claims description 165
- 239000002243 precursor Substances 0.000 claims description 116
- 239000011347 resin Substances 0.000 claims description 89
- 229920005989 resin Polymers 0.000 claims description 89
- 239000004642 Polyimide Substances 0.000 claims description 77
- 229920001721 polyimide Polymers 0.000 claims description 77
- 238000004519 manufacturing process Methods 0.000 claims description 66
- 238000003860 storage Methods 0.000 claims description 61
- 125000003118 aryl group Chemical group 0.000 claims description 49
- 229920002098 polyfluorene Polymers 0.000 claims description 43
- 125000000962 organic group Chemical group 0.000 claims description 41
- 229920002577 polybenzoxazole Polymers 0.000 claims description 40
- 150000003949 imides Chemical class 0.000 claims description 36
- 239000003999 initiator Substances 0.000 claims description 29
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 24
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000010526 radical polymerization reaction Methods 0.000 claims description 2
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 claims 2
- 206010034972 Photosensitivity reaction Diseases 0.000 claims 1
- 230000036211 photosensitivity Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 194
- -1 acryl Chemical group 0.000 description 137
- 150000003254 radicals Chemical class 0.000 description 73
- 239000000126 substance Substances 0.000 description 57
- 239000003513 alkali Substances 0.000 description 39
- 125000000217 alkyl group Chemical group 0.000 description 34
- 239000010408 film Substances 0.000 description 33
- 239000000758 substrate Substances 0.000 description 31
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 29
- 125000004432 carbon atom Chemical group C* 0.000 description 29
- 239000002585 base Substances 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 27
- 125000001931 aliphatic group Chemical group 0.000 description 25
- 239000002904 solvent Substances 0.000 description 24
- 239000002253 acid Substances 0.000 description 21
- 125000001424 substituent group Chemical group 0.000 description 21
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 19
- 150000007513 acids Chemical class 0.000 description 18
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 17
- 206010040844 Skin exfoliation Diseases 0.000 description 17
- 125000005647 linker group Chemical group 0.000 description 17
- 238000004321 preservation Methods 0.000 description 17
- 239000007870 radical polymerization initiator Substances 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 150000001450 anions Chemical class 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 239000003112 inhibitor Substances 0.000 description 16
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 16
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 16
- 239000007787 solid Substances 0.000 description 16
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 14
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 14
- 125000002947 alkylene group Chemical group 0.000 description 14
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 238000006116 polymerization reaction Methods 0.000 description 14
- 150000001412 amines Chemical class 0.000 description 13
- 150000002430 hydrocarbons Chemical group 0.000 description 13
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 13
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 12
- 230000004913 activation Effects 0.000 description 12
- 238000009835 boiling Methods 0.000 description 12
- 150000002148 esters Chemical class 0.000 description 12
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 12
- 238000003786 synthesis reaction Methods 0.000 description 12
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 11
- 239000006087 Silane Coupling Agent Substances 0.000 description 11
- 125000003342 alkenyl group Chemical group 0.000 description 11
- 150000003863 ammonium salts Chemical class 0.000 description 11
- 229910052731 fluorine Inorganic materials 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- 239000004094 surface-active agent Substances 0.000 description 11
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 10
- 238000001914 filtration Methods 0.000 description 10
- 238000007363 ring formation reaction Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 125000003277 amino group Chemical group 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 150000004985 diamines Chemical class 0.000 description 9
- 125000001153 fluoro group Chemical group F* 0.000 description 9
- 150000002466 imines Chemical class 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 150000003839 salts Chemical class 0.000 description 9
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 125000006165 cyclic alkyl group Chemical group 0.000 description 8
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 8
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 7
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 7
- ISAOCJYIOMOJEB-UHFFFAOYSA-N desyl alcohol Natural products C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 7
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 7
- 239000000178 monomer Substances 0.000 description 7
- 229940059574 pentaerithrityl Drugs 0.000 description 7
- 230000001235 sensitizing effect Effects 0.000 description 7
- 150000003512 tertiary amines Chemical class 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 6
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical group CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000003463 adsorbent Substances 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 239000012986 chain transfer agent Substances 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 150000005690 diesters Chemical class 0.000 description 6
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 6
- ARXJGSRGQADJSQ-UHFFFAOYSA-N propylene glycol methyl ether Substances COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical group O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 6
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 5
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 5
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 5
- 125000003545 alkoxy group Chemical group 0.000 description 5
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 5
- 239000012965 benzophenone Substances 0.000 description 5
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 5
- 150000001735 carboxylic acids Chemical class 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 5
- 125000004427 diamine group Chemical group 0.000 description 5
- 125000005843 halogen group Chemical group 0.000 description 5
- 125000002883 imidazolyl group Chemical group 0.000 description 5
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 5
- 125000002950 monocyclic group Chemical group 0.000 description 5
- 125000002971 oxazolyl group Chemical group 0.000 description 5
- 125000003367 polycyclic group Chemical group 0.000 description 5
- 239000003505 polymerization initiator Substances 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- 125000003373 pyrazinyl group Chemical group 0.000 description 5
- 125000000168 pyrrolyl group Chemical group 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 4
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical group C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 244000028419 Styrax benzoin Species 0.000 description 4
- 235000000126 Styrax benzoin Nutrition 0.000 description 4
- 235000008411 Sumatra benzointree Nutrition 0.000 description 4
- 125000004018 acid anhydride group Chemical group 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 229960002130 benzoin Drugs 0.000 description 4
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 4
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 4
- 235000014113 dietary fatty acids Nutrition 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 150000002170 ethers Chemical class 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229930195729 fatty acid Natural products 0.000 description 4
- 239000000194 fatty acid Substances 0.000 description 4
- 150000004665 fatty acids Chemical class 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 235000019382 gum benzoic Nutrition 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 125000001041 indolyl group Chemical group 0.000 description 4
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 4
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 4
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 4
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 150000000000 tetracarboxylic acids Chemical group 0.000 description 4
- 150000003573 thiols Chemical class 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 3
- VZDDUFFXSBGRMP-UHFFFAOYSA-N 9h-fluoren-1-ylphosphane Chemical class C12=CC=CC=C2CC2=C1C=CC=C2P VZDDUFFXSBGRMP-UHFFFAOYSA-N 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000013556 antirust agent Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 150000001733 carboxylic acid esters Chemical class 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 125000000753 cycloalkyl group Chemical group 0.000 description 3
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000001991 dicarboxylic acids Chemical class 0.000 description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 3
- 239000000539 dimer Substances 0.000 description 3
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000006575 electron-withdrawing group Chemical group 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 3
- 229940116333 ethyl lactate Drugs 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 125000000623 heterocyclic group Chemical group 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 3
- 150000002978 peroxides Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 125000003386 piperidinyl group Chemical group 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 125000003226 pyrazolyl group Chemical group 0.000 description 3
- 125000000714 pyrimidinyl group Chemical group 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 3
- SWYZZEPJSISERH-KHPPLWFESA-N (z)-2-(3-triethoxysilylpropyl)but-2-enedioic acid Chemical compound CCO[Si](OCC)(OCC)CCC\C(=C\C(O)=O)C(O)=O SWYZZEPJSISERH-KHPPLWFESA-N 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- FLBAYUMRQUHISI-UHFFFAOYSA-N 1,8-naphthyridine Chemical group N1=CC=CC2=CC=CN=C21 FLBAYUMRQUHISI-UHFFFAOYSA-N 0.000 description 2
- ZGEGCLOFRBLKSE-UHFFFAOYSA-N 1-Heptene Chemical group CCCCCC=C ZGEGCLOFRBLKSE-UHFFFAOYSA-N 0.000 description 2
- WTFAGPBUAGFMQX-UHFFFAOYSA-N 1-[2-[2-(2-aminopropoxy)propoxy]propoxy]propan-2-amine Chemical compound CC(N)COCC(C)OCC(C)OCC(C)N WTFAGPBUAGFMQX-UHFFFAOYSA-N 0.000 description 2
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical group C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- HNAGHMKIPMKKBB-UHFFFAOYSA-N 1-benzylpyrrolidine-3-carboxamide Chemical compound C1C(C(=O)N)CCN1CC1=CC=CC=C1 HNAGHMKIPMKKBB-UHFFFAOYSA-N 0.000 description 2
- YXAOOTNFFAQIPZ-UHFFFAOYSA-N 1-nitrosonaphthalen-2-ol Chemical compound C1=CC=CC2=C(N=O)C(O)=CC=C21 YXAOOTNFFAQIPZ-UHFFFAOYSA-N 0.000 description 2
- QFGCFKJIPBRJGM-UHFFFAOYSA-N 12-[(2-methylpropan-2-yl)oxy]-12-oxododecanoic acid Chemical compound CC(C)(C)OC(=O)CCCCCCCCCCC(O)=O QFGCFKJIPBRJGM-UHFFFAOYSA-N 0.000 description 2
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Natural products C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 2
- UXGVMFHEKMGWMA-UHFFFAOYSA-N 2-benzofuran Chemical group C1=CC=CC2=COC=C21 UXGVMFHEKMGWMA-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- WXUAQHNMJWJLTG-UHFFFAOYSA-N 2-methylbutanedioic acid Chemical compound OC(=O)C(C)CC(O)=O WXUAQHNMJWJLTG-UHFFFAOYSA-N 0.000 description 2
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical group C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 2
- AGIJRRREJXSQJR-UHFFFAOYSA-N 2h-thiazine Chemical compound N1SC=CC=C1 AGIJRRREJXSQJR-UHFFFAOYSA-N 0.000 description 2
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical group C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 2
- XJMMNTGIMDZPMU-UHFFFAOYSA-N 3-methylglutaric acid Chemical compound OC(=O)CC(C)CC(O)=O XJMMNTGIMDZPMU-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- OZJPLYNZGCXSJM-UHFFFAOYSA-N 5-valerolactone Chemical compound O=C1CCCCO1 OZJPLYNZGCXSJM-UHFFFAOYSA-N 0.000 description 2
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical group N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Natural products CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- QCNWZROVPSVEJA-UHFFFAOYSA-N Heptadecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCC(O)=O QCNWZROVPSVEJA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- FFOPEPMHKILNIT-UHFFFAOYSA-N Isopropyl butyrate Chemical compound CCCC(=O)OC(C)C FFOPEPMHKILNIT-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- BTZVDPWKGXMQFW-UHFFFAOYSA-N Pentadecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCCC(O)=O BTZVDPWKGXMQFW-UHFFFAOYSA-N 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical group CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical group C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001409 amidines Chemical class 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 125000005577 anthracene group Chemical group 0.000 description 2
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 description 2
- 229940053200 antiepileptics fatty acid derivative Drugs 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 235000019445 benzyl alcohol Nutrition 0.000 description 2
- 125000000051 benzyloxy group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])O* 0.000 description 2
- 239000002981 blocking agent Substances 0.000 description 2
- OBNCKNCVKJNDBV-UHFFFAOYSA-N butanoic acid ethyl ester Natural products CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 description 2
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical compound CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 238000003851 corona treatment Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- 150000001990 dicarboxylic acid derivatives Chemical class 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- HMSWAIKSFDFLKN-UHFFFAOYSA-N hexacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC HMSWAIKSFDFLKN-UHFFFAOYSA-N 0.000 description 2
- QQHJDPROMQRDLA-UHFFFAOYSA-N hexadecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCCCC(O)=O QQHJDPROMQRDLA-UHFFFAOYSA-N 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- CBFCDTFDPHXCNY-UHFFFAOYSA-N icosane Chemical compound CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 2
- 125000003454 indenyl group Chemical group C1(C=CC2=CC=CC=C12)* 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 125000000904 isoindolyl group Chemical group C=1(NC=C2C=CC=CC12)* 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000005641 methacryl group Chemical group 0.000 description 2
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 2
- BNJOQKFENDDGSC-UHFFFAOYSA-N octadecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCCC(O)=O BNJOQKFENDDGSC-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- GUVXZFRDPCKWEM-UHFFFAOYSA-N pentalene group Chemical group C1=CC=C2C=CC=C12 GUVXZFRDPCKWEM-UHFFFAOYSA-N 0.000 description 2
- JQQSUOJIMKJQHS-UHFFFAOYSA-N pentaphenyl group Chemical group C1=CC=CC2=CC3=CC=C4C=C5C=CC=CC5=CC4=C3C=C12 JQQSUOJIMKJQHS-UHFFFAOYSA-N 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical group C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 125000001791 phenazinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3N=C12)* 0.000 description 2
- LFSXCDWNBUNEEM-UHFFFAOYSA-N phthalazine Chemical group C1=NN=CC2=CC=CC=C21 LFSXCDWNBUNEEM-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229920000768 polyamine Chemical class 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical group N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 150000003335 secondary amines Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 2
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 2
- 239000012756 surface treatment agent Substances 0.000 description 2
- HQHCYKULIHKCEB-UHFFFAOYSA-N tetradecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCC(O)=O HQHCYKULIHKCEB-UHFFFAOYSA-N 0.000 description 2
- 150000003536 tetrazoles Chemical group 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- 125000005580 triphenylene group Chemical group 0.000 description 2
- 125000001834 xanthenyl group Chemical group C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical class C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 1
- 125000000355 1,3-benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical class C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- FBMQNRKSAWNXBT-UHFFFAOYSA-N 1,4-diaminoanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C(N)=CC=C2N FBMQNRKSAWNXBT-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- VWBVCOPVKXNMMZ-UHFFFAOYSA-N 1,5-diaminoanthracene-9,10-dione Chemical compound O=C1C2=C(N)C=CC=C2C(=O)C2=C1C=CC=C2N VWBVCOPVKXNMMZ-UHFFFAOYSA-N 0.000 description 1
- VBFVFTVNLQCICW-UHFFFAOYSA-N 1-(trifluoromethyl)-2-[2-(trifluoromethyl)phenyl]benzene Chemical group FC(F)(F)C1=CC=CC=C1C1=CC=CC=C1C(F)(F)F VBFVFTVNLQCICW-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 1
- RDSVPKGMYHANML-UHFFFAOYSA-N 1-[2-[1-(2-aminopropoxy)propan-2-yloxy]ethoxy]propan-2-amine Chemical compound CC(N)COCCOC(C)COCC(C)N RDSVPKGMYHANML-UHFFFAOYSA-N 0.000 description 1
- QCWWEZIJUCPALZ-UHFFFAOYSA-N 1-aminobutan-2-one Chemical compound CCC(=O)CN QCWWEZIJUCPALZ-UHFFFAOYSA-N 0.000 description 1
- IANQTJSKSUMEQM-UHFFFAOYSA-N 1-benzofuran Chemical group C1=CC=C2OC=CC2=C1 IANQTJSKSUMEQM-UHFFFAOYSA-N 0.000 description 1
- WVUYYXUATWMVIT-UHFFFAOYSA-N 1-bromo-4-ethoxybenzene Chemical compound CCOC1=CC=C(Br)C=C1 WVUYYXUATWMVIT-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- 125000006219 1-ethylpentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- BUZMJVBOGDBMGI-UHFFFAOYSA-N 1-phenylpropylbenzene Chemical compound C=1C=CC=CC=1C(CC)C1=CC=CC=C1 BUZMJVBOGDBMGI-UHFFFAOYSA-N 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical class CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- HFZLSTDPRQSZCQ-UHFFFAOYSA-N 1-pyrrolidin-3-ylpyrrolidine Chemical compound C1CCCN1C1CNCC1 HFZLSTDPRQSZCQ-UHFFFAOYSA-N 0.000 description 1
- MACMNSLOLFMQKL-UHFFFAOYSA-N 1-sulfanyltriazole Chemical class SN1C=CN=N1 MACMNSLOLFMQKL-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- JAAIPIWKKXCNOC-UHFFFAOYSA-N 1h-tetrazol-1-ium-5-thiolate Chemical class SC1=NN=NN1 JAAIPIWKKXCNOC-UHFFFAOYSA-N 0.000 description 1
- LVKMGHBPYIRYPS-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7-dodecafluorooctanedioic acid;dihydrate Chemical compound O.O.OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(O)=O LVKMGHBPYIRYPS-UHFFFAOYSA-N 0.000 description 1
- AUGXEWHOMRRUHX-UHFFFAOYSA-N 2,2,3,3,4,4-hexafluorodecanedioic acid Chemical compound FC(C(C(C(=O)O)(F)F)(F)F)(CCCCCC(=O)O)F AUGXEWHOMRRUHX-UHFFFAOYSA-N 0.000 description 1
- CCUWGJDGLACFQT-UHFFFAOYSA-N 2,2,3,3,4,4-hexafluoropentanedioic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(O)=O CCUWGJDGLACFQT-UHFFFAOYSA-N 0.000 description 1
- YUDUFRYTKFGQCL-UHFFFAOYSA-N 2,2,3,3-tetrafluorobutanedioic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(O)=O YUDUFRYTKFGQCL-UHFFFAOYSA-N 0.000 description 1
- KJDGGLOKWHMBOX-UHFFFAOYSA-N 2,2,3-trimethylbutanedioic acid Chemical compound OC(=O)C(C)C(C)(C)C(O)=O KJDGGLOKWHMBOX-UHFFFAOYSA-N 0.000 description 1
- CKUJONFLPBQEKM-UHFFFAOYSA-N 2,2,6,6-tetramethylheptanedioic acid Chemical compound OC(=O)C(C)(C)CCCC(C)(C)C(O)=O CKUJONFLPBQEKM-UHFFFAOYSA-N 0.000 description 1
- WUHHVDQBQZVSJV-UHFFFAOYSA-N 2,2-dibutylpropanedioic acid Chemical compound CCCCC(C(O)=O)(C(O)=O)CCCC WUHHVDQBQZVSJV-UHFFFAOYSA-N 0.000 description 1
- BTUDGPVTCYNYLK-UHFFFAOYSA-N 2,2-dimethylglutaric acid Chemical compound OC(=O)C(C)(C)CCC(O)=O BTUDGPVTCYNYLK-UHFFFAOYSA-N 0.000 description 1
- GOHPTLYPQCTZSE-UHFFFAOYSA-N 2,2-dimethylsuccinic acid Chemical compound OC(=O)C(C)(C)CC(O)=O GOHPTLYPQCTZSE-UHFFFAOYSA-N 0.000 description 1
- WCZNKVPCIFMXEQ-UHFFFAOYSA-N 2,3,5,6-tetramethylbenzene-1,4-diamine Chemical compound CC1=C(C)C(N)=C(C)C(C)=C1N WCZNKVPCIFMXEQ-UHFFFAOYSA-N 0.000 description 1
- KKTUQAYCCLMNOA-UHFFFAOYSA-N 2,3-diaminobenzoic acid Chemical compound NC1=CC=CC(C(O)=O)=C1N KKTUQAYCCLMNOA-UHFFFAOYSA-N 0.000 description 1
- PCAXITAPTVOLGL-UHFFFAOYSA-N 2,3-diaminophenol Chemical class NC1=CC=CC(O)=C1N PCAXITAPTVOLGL-UHFFFAOYSA-N 0.000 description 1
- KLZYRCVPDWTZLH-UHFFFAOYSA-N 2,3-dimethylsuccinic acid Chemical compound OC(=O)C(C)C(C)C(O)=O KLZYRCVPDWTZLH-UHFFFAOYSA-N 0.000 description 1
- ZVDSMYGTJDFNHN-UHFFFAOYSA-N 2,4,6-trimethylbenzene-1,3-diamine Chemical compound CC1=CC(C)=C(N)C(C)=C1N ZVDSMYGTJDFNHN-UHFFFAOYSA-N 0.000 description 1
- OVSKIKFHRZPJSS-UHFFFAOYSA-N 2,4-D Chemical compound OC(=O)COC1=CC=C(Cl)C=C1Cl OVSKIKFHRZPJSS-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- QYXHDJJYVDLECA-UHFFFAOYSA-N 2,5-diphenylcyclohexa-2,5-diene-1,4-dione Chemical compound O=C1C=C(C=2C=CC=CC=2)C(=O)C=C1C1=CC=CC=C1 QYXHDJJYVDLECA-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WMYINDVYGQKYMI-UHFFFAOYSA-N 2-[2,2-bis(hydroxymethyl)butoxymethyl]-2-ethylpropane-1,3-diol Chemical compound CCC(CO)(CO)COCC(CC)(CO)CO WMYINDVYGQKYMI-UHFFFAOYSA-N 0.000 description 1
- YUZSJKBFHATJHV-UHFFFAOYSA-N 2-[4-[2-[4-(2-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C(=CC=CC=3)N)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 YUZSJKBFHATJHV-UHFFFAOYSA-N 0.000 description 1
- PTJWCLYPVFJWMP-UHFFFAOYSA-N 2-[[3-hydroxy-2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)COCC(CO)(CO)CO PTJWCLYPVFJWMP-UHFFFAOYSA-N 0.000 description 1
- HEQOJEGTZCTHCF-UHFFFAOYSA-N 2-amino-1-phenylethanone Chemical class NCC(=O)C1=CC=CC=C1 HEQOJEGTZCTHCF-UHFFFAOYSA-N 0.000 description 1
- ZTZLVQYRXBHWEU-UHFFFAOYSA-N 2-amino-4-[1-(3-amino-4-hydroxyphenyl)-9h-fluoren-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C=2C(=C3C(C4=CC=CC=C4C3)=CC=2)C=2C=C(N)C(O)=CC=2)=C1 ZTZLVQYRXBHWEU-UHFFFAOYSA-N 0.000 description 1
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 1
- UHIDYCYNRPVZCK-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)propan-2-yl]phenol Chemical compound C=1C=C(O)C(N)=CC=1C(C)(C)C1=CC=C(O)C(N)=C1 UHIDYCYNRPVZCK-UHFFFAOYSA-N 0.000 description 1
- NPUFCLGAODQFLG-UHFFFAOYSA-N 2-amino-5-(4-aminophenyl)cyclohexa-2,4-diene-1,1-diol Chemical group C1C(O)(O)C(N)=CC=C1C1=CC=C(N)C=C1 NPUFCLGAODQFLG-UHFFFAOYSA-N 0.000 description 1
- IYOLSZYAAACSNO-UHFFFAOYSA-N 2-amino-5-[1-(4-amino-3-hydroxyphenyl)-9H-fluoren-2-yl]phenol Chemical compound NC1=C(C=C(C=C1)C1=C(C=2CC3=CC=CC=C3C=2C=C1)C1=CC(=C(C=C1)N)O)O IYOLSZYAAACSNO-UHFFFAOYSA-N 0.000 description 1
- ZDRNVPNSQJRIRN-UHFFFAOYSA-N 2-amino-5-[2-(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C(O)=C1 ZDRNVPNSQJRIRN-UHFFFAOYSA-N 0.000 description 1
- JDFAWEKPFLGRAK-UHFFFAOYSA-N 2-amino-5-[2-(4-amino-3-hydroxyphenyl)propan-2-yl]phenol Chemical compound C=1C=C(N)C(O)=CC=1C(C)(C)C1=CC=C(N)C(O)=C1 JDFAWEKPFLGRAK-UHFFFAOYSA-N 0.000 description 1
- UZSDRHVOBLQYCX-UHFFFAOYSA-N 2-amino-6-hydroxybenzoic acid Chemical compound NC1=CC=CC(O)=C1C(O)=O UZSDRHVOBLQYCX-UHFFFAOYSA-N 0.000 description 1
- ZMCHBSMFKQYNKA-UHFFFAOYSA-N 2-aminobenzenesulfonic acid Chemical compound NC1=CC=CC=C1S(O)(=O)=O ZMCHBSMFKQYNKA-UHFFFAOYSA-N 0.000 description 1
- VRVRGVPWCUEOGV-UHFFFAOYSA-N 2-aminothiophenol Chemical compound NC1=CC=CC=C1S VRVRGVPWCUEOGV-UHFFFAOYSA-N 0.000 description 1
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- ALQPJHSFIXARGX-UHFFFAOYSA-N 2-ethynylaniline Chemical compound NC1=CC=CC=C1C#C ALQPJHSFIXARGX-UHFFFAOYSA-N 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical class OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- PCKZAVNWRLEHIP-UHFFFAOYSA-N 2-hydroxy-1-[4-[[4-(2-hydroxy-2-methylpropanoyl)phenyl]methyl]phenyl]-2-methylpropan-1-one Chemical compound C1=CC(C(=O)C(C)(O)C)=CC=C1CC1=CC=C(C(=O)C(C)(C)O)C=C1 PCKZAVNWRLEHIP-UHFFFAOYSA-N 0.000 description 1
- FLFWJIBUZQARMD-UHFFFAOYSA-N 2-mercapto-1,3-benzoxazole Chemical class C1=CC=C2OC(S)=NC2=C1 FLFWJIBUZQARMD-UHFFFAOYSA-N 0.000 description 1
- BKBZFJRHYSCZQA-UHFFFAOYSA-N 2-methoxy-2-methylpropanoic acid Chemical compound COC(C)(C)C(O)=O BKBZFJRHYSCZQA-UHFFFAOYSA-N 0.000 description 1
- ICPWFHKNYYRBSZ-UHFFFAOYSA-M 2-methoxypropanoate Chemical compound COC(C)C([O-])=O ICPWFHKNYYRBSZ-UHFFFAOYSA-M 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- RIWRBSMFKVOJMN-UHFFFAOYSA-N 2-methyl-1-phenylpropan-2-ol Chemical compound CC(C)(O)CC1=CC=CC=C1 RIWRBSMFKVOJMN-UHFFFAOYSA-N 0.000 description 1
- FJNLCHNQVJVCPY-UHFFFAOYSA-N 2-n-methoxy-2-n-methyl-4-n,6-n-dipropyl-1,3,5-triazine-2,4,6-triamine Chemical compound CCCNC1=NC(NCCC)=NC(N(C)OC)=N1 FJNLCHNQVJVCPY-UHFFFAOYSA-N 0.000 description 1
- SYUYTOYKQOAVDW-UHFFFAOYSA-N 2-nitrosonaphthalen-1-ol Chemical compound C1=CC=C2C(O)=C(N=O)C=CC2=C1 SYUYTOYKQOAVDW-UHFFFAOYSA-N 0.000 description 1
- WNYJRJRHKRZXEO-UHFFFAOYSA-N 2-propan-2-ylbenzene-1,4-diamine Chemical compound CC(C)C1=CC(N)=CC=C1N WNYJRJRHKRZXEO-UHFFFAOYSA-N 0.000 description 1
- DQEUFPARIOFOAI-UHFFFAOYSA-N 2-propan-2-ylpropanedioic acid Chemical compound CC(C)C(C(O)=O)C(O)=O DQEUFPARIOFOAI-UHFFFAOYSA-N 0.000 description 1
- KATSEUSPUVTAAQ-UHFFFAOYSA-N 2h-benzotriazole;5-methyl-2h-benzotriazole Chemical compound C1=CC=C2NN=NC2=C1.CC1=CC=C2NN=NC2=C1 KATSEUSPUVTAAQ-UHFFFAOYSA-N 0.000 description 1
- UAIUNKRWKOVEES-UHFFFAOYSA-N 3,3',5,5'-tetramethylbenzidine Chemical group CC1=C(N)C(C)=CC(C=2C=C(C)C(N)=C(C)C=2)=C1 UAIUNKRWKOVEES-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- HSTOKWSFWGCZMH-UHFFFAOYSA-N 3,3'-diaminobenzidine Chemical group C1=C(N)C(N)=CC=C1C1=CC=C(N)C(N)=C1 HSTOKWSFWGCZMH-UHFFFAOYSA-N 0.000 description 1
- DUHQIGLHYXLKAE-UHFFFAOYSA-N 3,3-dimethylglutaric acid Chemical compound OC(=O)CC(C)(C)CC(O)=O DUHQIGLHYXLKAE-UHFFFAOYSA-N 0.000 description 1
- AJHPGXZOIAYYDW-UHFFFAOYSA-N 3-(2-cyanophenyl)-2-[(2-methylpropan-2-yl)oxycarbonylamino]propanoic acid Chemical compound CC(C)(C)OC(=O)NC(C(O)=O)CC1=CC=CC=C1C#N AJHPGXZOIAYYDW-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- NDXGRHCEHPFUSU-UHFFFAOYSA-N 3-(3-aminophenyl)aniline Chemical group NC1=CC=CC(C=2C=C(N)C=CC=2)=C1 NDXGRHCEHPFUSU-UHFFFAOYSA-N 0.000 description 1
- KEPGNQLKWDULGD-UHFFFAOYSA-N 3-(3-prop-2-enoyloxypropoxy)propyl prop-2-enoate Chemical compound C=CC(=O)OCCCOCCCOC(=O)C=C KEPGNQLKWDULGD-UHFFFAOYSA-N 0.000 description 1
- WWJCRUKUIQRCGP-UHFFFAOYSA-N 3-(dimethylamino)propyl 2-methylprop-2-enoate Chemical compound CN(C)CCCOC(=O)C(C)=C WWJCRUKUIQRCGP-UHFFFAOYSA-N 0.000 description 1
- PQFRTJPVZSPBFI-UHFFFAOYSA-N 3-(trifluoromethyl)benzene-1,2-diamine Chemical compound NC1=CC=CC(C(F)(F)F)=C1N PQFRTJPVZSPBFI-UHFFFAOYSA-N 0.000 description 1
- ZZYZUFNSKAIYCJ-UHFFFAOYSA-N 3-[(3-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1C(N)CCCC1CC1CC(N)CCC1 ZZYZUFNSKAIYCJ-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- UCFMKTNJZCYBBJ-UHFFFAOYSA-N 3-[1-(2,3-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)C1=CC=CC(C(O)=O)=C1C(O)=O UCFMKTNJZCYBBJ-UHFFFAOYSA-N 0.000 description 1
- PAHZZOIHRHCHTH-UHFFFAOYSA-N 3-[2-(2,3-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)(C)C1=CC=CC(C(O)=O)=C1C(O)=O PAHZZOIHRHCHTH-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- MFTFTIALAXXIMU-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MFTFTIALAXXIMU-UHFFFAOYSA-N 0.000 description 1
- GIMFLOOKFCUUOQ-UHFFFAOYSA-N 3-amino-4-hydroxy-1,2-dihydropyrimidin-6-one Chemical compound NN1CN=C(O)C=C1O GIMFLOOKFCUUOQ-UHFFFAOYSA-N 0.000 description 1
- ZAJAQTYSTDTMCU-UHFFFAOYSA-N 3-aminobenzenesulfonic acid Chemical compound NC1=CC=CC(S(O)(=O)=O)=C1 ZAJAQTYSTDTMCU-UHFFFAOYSA-N 0.000 description 1
- KFFUEVDMVNIOHA-UHFFFAOYSA-N 3-aminobenzenethiol Chemical compound NC1=CC=CC(S)=C1 KFFUEVDMVNIOHA-UHFFFAOYSA-N 0.000 description 1
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 1
- 229940018563 3-aminophenol Drugs 0.000 description 1
- FCXUMTIQEJYDOU-UHFFFAOYSA-N 3-diphenylphosphanyloxy-5-(trifluoromethyl)aniline Chemical compound C1=CC=C(C=C1)P(C2=CC=CC=C2)OC3=CC(=CC(=C3)N)C(F)(F)F FCXUMTIQEJYDOU-UHFFFAOYSA-N 0.000 description 1
- ABZLRXBAERZNRD-UHFFFAOYSA-N 3-ethoxyiminobutan-2-one Chemical compound CCON=C(C)C(C)=O ABZLRXBAERZNRD-UHFFFAOYSA-N 0.000 description 1
- XAWFHZMTJUGGEE-UHFFFAOYSA-N 3-ethyl-3-methylpentanedioic acid Chemical compound OC(=O)CC(C)(CC)CC(O)=O XAWFHZMTJUGGEE-UHFFFAOYSA-N 0.000 description 1
- NNKQLUVBPJEUOR-UHFFFAOYSA-N 3-ethynylaniline Chemical compound NC1=CC=CC(C#C)=C1 NNKQLUVBPJEUOR-UHFFFAOYSA-N 0.000 description 1
- SYEOWUNSTUDKGM-YFKPBYRVSA-N 3-methyladipic acid Chemical compound OC(=O)C[C@@H](C)CCC(O)=O SYEOWUNSTUDKGM-YFKPBYRVSA-N 0.000 description 1
- RPKHFQXMFPSMJO-UHFFFAOYSA-N 3-phenylmethoxyiminobutan-2-one Chemical compound CC(=O)C(C)=NOCC1=CC=CC=C1 RPKHFQXMFPSMJO-UHFFFAOYSA-N 0.000 description 1
- ATVJXMYDOSMEPO-UHFFFAOYSA-N 3-prop-2-enoxyprop-1-ene Chemical compound C=CCOCC=C ATVJXMYDOSMEPO-UHFFFAOYSA-N 0.000 description 1
- TXFPEBPIARQUIG-UHFFFAOYSA-N 4'-hydroxyacetophenone Chemical compound CC(=O)C1=CC=C(O)C=C1 TXFPEBPIARQUIG-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- FYYYKXFEKMGYLZ-UHFFFAOYSA-N 4-(1,3-dioxo-2-benzofuran-5-yl)-2-benzofuran-1,3-dione Chemical compound C=1C=C2C(=O)OC(=O)C2=CC=1C1=CC=CC2=C1C(=O)OC2=O FYYYKXFEKMGYLZ-UHFFFAOYSA-N 0.000 description 1
- RQBIGPMJQUKYAH-UHFFFAOYSA-N 4-(3,4-diaminophenoxy)benzene-1,2-diamine Chemical compound C1=C(N)C(N)=CC=C1OC1=CC=C(N)C(N)=C1 RQBIGPMJQUKYAH-UHFFFAOYSA-N 0.000 description 1
- AIVVXPSKEVWKMY-UHFFFAOYSA-N 4-(3,4-dicarboxyphenoxy)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 AIVVXPSKEVWKMY-UHFFFAOYSA-N 0.000 description 1
- FWOLORXQTIGHFX-UHFFFAOYSA-N 4-(4-amino-2,3,5,6-tetrafluorophenyl)-2,3,5,6-tetrafluoroaniline Chemical group FC1=C(F)C(N)=C(F)C(F)=C1C1=C(F)C(F)=C(N)C(F)=C1F FWOLORXQTIGHFX-UHFFFAOYSA-N 0.000 description 1
- UVJXASLHNGDGTJ-UHFFFAOYSA-N 4-(4-amino-2,3,6-trifluorophenyl)-2,3,5-trifluoroaniline Chemical compound FC1=C(F)C(N)=CC(F)=C1C1=C(F)C=C(N)C(F)=C1F UVJXASLHNGDGTJ-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- QQWWWAQUMVHHQN-UHFFFAOYSA-N 4-(4-amino-4-phenylcyclohexa-1,5-dien-1-yl)aniline Chemical group C1=CC(N)=CC=C1C1=CCC(N)(C=2C=CC=CC=2)C=C1 QQWWWAQUMVHHQN-UHFFFAOYSA-N 0.000 description 1
- LFEWXDOYPCWFHR-UHFFFAOYSA-N 4-(4-carboxybenzoyl)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C=C1 LFEWXDOYPCWFHR-UHFFFAOYSA-N 0.000 description 1
- WVDRSXGPQWNUBN-UHFFFAOYSA-N 4-(4-carboxyphenoxy)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C=C1 WVDRSXGPQWNUBN-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- SGPJBCCVSFQQED-UHFFFAOYSA-N 4-[(4-aminophenyl)-[[dimethyl(trimethylsilyloxy)silyl]oxy-dimethylsilyl]oxy-methylsilyl]oxysilylaniline Chemical compound C=1C=C(N)C=CC=1[Si](C)(O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C)O[SiH2]C1=CC=C(N)C=C1 SGPJBCCVSFQQED-UHFFFAOYSA-N 0.000 description 1
- IJJNNSUCZDJDLP-UHFFFAOYSA-N 4-[1-(3,4-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 IJJNNSUCZDJDLP-UHFFFAOYSA-N 0.000 description 1
- HSBOCPVKJMBWTF-UHFFFAOYSA-N 4-[1-(4-aminophenyl)ethyl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)C1=CC=C(N)C=C1 HSBOCPVKJMBWTF-UHFFFAOYSA-N 0.000 description 1
- ASNOFHCTUSIHOM-UHFFFAOYSA-N 4-[10-(4-aminophenyl)anthracen-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=C(N)C=C1 ASNOFHCTUSIHOM-UHFFFAOYSA-N 0.000 description 1
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 1
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- LTKJRDQWPMBSFN-UHFFFAOYSA-N 4-[3-(4-aminophenyl)-1,1,2,2,3,3-hexafluoropropyl]aniline Chemical compound C1=CC(N)=CC=C1C(F)(F)C(F)(F)C(F)(F)C1=CC=C(N)C=C1 LTKJRDQWPMBSFN-UHFFFAOYSA-N 0.000 description 1
- BOVVHULZWVFIOX-UHFFFAOYSA-N 4-[3-(4-aminophenyl)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=CC(C=2C=CC(N)=CC=2)=C1 BOVVHULZWVFIOX-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- GACNZKUFHGKSEX-UHFFFAOYSA-N 4-[4-(4-aminophenyl)-1,1,2,2,3,3,4,4-octafluorobutyl]aniline Chemical compound C1=CC(N)=CC=C1C(F)(F)C(F)(F)C(F)(F)C(F)(F)C1=CC=C(N)C=C1 GACNZKUFHGKSEX-UHFFFAOYSA-N 0.000 description 1
- LFNFPWYUXXLMGE-UHFFFAOYSA-N 4-[4-[1-[4-(4-aminophenoxy)phenyl]-9H-fluoren-2-yl]phenoxy]aniline Chemical compound NC1=CC=C(OC2=CC=C(C=C2)C2=C(C=3CC4=CC=CC=C4C=3C=C2)C2=CC=C(C=C2)OC2=CC=C(C=C2)N)C=C1 LFNFPWYUXXLMGE-UHFFFAOYSA-N 0.000 description 1
- HBLYIUPUXAWDMA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)-3,5-bis(trifluoromethyl)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]-2,6-bis(trifluoromethyl)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=C(C(F)(F)F)C=C(C(C=2C=C(C(OC=3C=CC(N)=CC=3)=C(C=2)C(F)(F)F)C(F)(F)F)(C(F)(F)F)C(F)(F)F)C=C1C(F)(F)F HBLYIUPUXAWDMA-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- IWFSADBGACLBMH-UHFFFAOYSA-N 4-[4-[4-[4-amino-2-(trifluoromethyl)phenoxy]phenyl]phenoxy]-3-(trifluoromethyl)aniline Chemical group FC(F)(F)C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C(=CC(N)=CC=3)C(F)(F)F)=CC=2)C=C1 IWFSADBGACLBMH-UHFFFAOYSA-N 0.000 description 1
- DPCDFSDBIWVMJC-UHFFFAOYSA-N 4-[4-[4-[4-amino-3-(trifluoromethyl)phenoxy]phenyl]phenoxy]-2-(trifluoromethyl)aniline Chemical group C1=C(C(F)(F)F)C(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=C(C(N)=CC=3)C(F)(F)F)=CC=2)C=C1 DPCDFSDBIWVMJC-UHFFFAOYSA-N 0.000 description 1
- LACZRKUWKHQVKS-UHFFFAOYSA-N 4-[4-[4-amino-2-(trifluoromethyl)phenoxy]phenoxy]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1C(F)(F)F LACZRKUWKHQVKS-UHFFFAOYSA-N 0.000 description 1
- FPAKXKXRPMFMLR-UHFFFAOYSA-N 4-[5-(4-aminophenyl)-1,1,2,2,3,3,4,4,5,5-decafluoropentyl]aniline Chemical compound C1=CC(N)=CC=C1C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C1=CC=C(N)C=C1 FPAKXKXRPMFMLR-UHFFFAOYSA-N 0.000 description 1
- ALYNCZNDIQEVRV-PZFLKRBQSA-N 4-amino-3,5-ditritiobenzoic acid Chemical compound [3H]c1cc(cc([3H])c1N)C(O)=O ALYNCZNDIQEVRV-PZFLKRBQSA-N 0.000 description 1
- HVBSAKJJOYLTQU-UHFFFAOYSA-N 4-aminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C=C1 HVBSAKJJOYLTQU-UHFFFAOYSA-N 0.000 description 1
- WCDSVWRUXWCYFN-UHFFFAOYSA-N 4-aminobenzenethiol Chemical compound NC1=CC=C(S)C=C1 WCDSVWRUXWCYFN-UHFFFAOYSA-N 0.000 description 1
- ABJQKDJOYSQVFX-UHFFFAOYSA-N 4-aminonaphthalen-1-ol Chemical compound C1=CC=C2C(N)=CC=C(O)C2=C1 ABJQKDJOYSQVFX-UHFFFAOYSA-N 0.000 description 1
- WUBBRNOQWQTFEX-UHFFFAOYSA-N 4-aminosalicylic acid Chemical compound NC1=CC=C(C(O)=O)C(O)=C1 WUBBRNOQWQTFEX-UHFFFAOYSA-N 0.000 description 1
- ACQVEWFMUBXEMR-UHFFFAOYSA-N 4-bromo-2-fluoro-6-nitrophenol Chemical compound OC1=C(F)C=C(Br)C=C1[N+]([O-])=O ACQVEWFMUBXEMR-UHFFFAOYSA-N 0.000 description 1
- IXPIMYAHKQOJCN-UHFFFAOYSA-N 4-diphenylphosphanyloxy-3-(trifluoromethyl)aniline Chemical compound C1=CC=C(C=C1)P(C2=CC=CC=C2)OC3=C(C=C(C=C3)N)C(F)(F)F IXPIMYAHKQOJCN-UHFFFAOYSA-N 0.000 description 1
- JXYITCJMBRETQX-UHFFFAOYSA-N 4-ethynylaniline Chemical compound NC1=CC=C(C#C)C=C1 JXYITCJMBRETQX-UHFFFAOYSA-N 0.000 description 1
- WXAIEIRYBSKHDP-UHFFFAOYSA-N 4-phenyl-n-(4-phenylphenyl)-n-[4-[4-(4-phenyl-n-(4-phenylphenyl)anilino)phenyl]phenyl]aniline Chemical compound C1=CC=CC=C1C1=CC=C(N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 WXAIEIRYBSKHDP-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- ZBIBQNVRTVLOHQ-UHFFFAOYSA-N 5-aminonaphthalen-1-ol Chemical compound C1=CC=C2C(N)=CC=CC2=C1O ZBIBQNVRTVLOHQ-UHFFFAOYSA-N 0.000 description 1
- FSBRKZMSECKELY-UHFFFAOYSA-N 5-aminonaphthalen-2-ol Chemical compound OC1=CC=C2C(N)=CC=CC2=C1 FSBRKZMSECKELY-UHFFFAOYSA-N 0.000 description 1
- FPKNJPIDCMAIDW-UHFFFAOYSA-N 5-aminonaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(N)=CC=CC2=C1C(O)=O FPKNJPIDCMAIDW-UHFFFAOYSA-N 0.000 description 1
- XVOBQVZYYPJXCK-UHFFFAOYSA-N 5-aminonaphthalene-2-carboxylic acid Chemical compound OC(=O)C1=CC=C2C(N)=CC=CC2=C1 XVOBQVZYYPJXCK-UHFFFAOYSA-N 0.000 description 1
- YDEUKNRKEYICTH-UHFFFAOYSA-N 5-aminoquinolin-8-ol Chemical compound C1=CC=C2C(N)=CC=C(O)C2=N1 YDEUKNRKEYICTH-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- RZWRYPGAUIOOMK-UHFFFAOYSA-N 5-nitroso-8-quinolinol Chemical compound C1=CN=C2C(O)=CC=C(N=O)C2=C1 RZWRYPGAUIOOMK-UHFFFAOYSA-N 0.000 description 1
- QYFYIOWLBSPSDM-UHFFFAOYSA-N 6-aminonaphthalen-1-ol Chemical compound OC1=CC=CC2=CC(N)=CC=C21 QYFYIOWLBSPSDM-UHFFFAOYSA-N 0.000 description 1
- CKSZZOAKPXZMAT-UHFFFAOYSA-N 6-aminonaphthalene-1-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=CC(N)=CC=C21 CKSZZOAKPXZMAT-UHFFFAOYSA-N 0.000 description 1
- NZTPZUIIYNYZKT-UHFFFAOYSA-N 6-aminonaphthalene-2-carboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(N)=CC=C21 NZTPZUIIYNYZKT-UHFFFAOYSA-N 0.000 description 1
- WSUYONLKFXZZRV-UHFFFAOYSA-N 7-aminonaphthalen-2-ol Chemical compound C1=CC(O)=CC2=CC(N)=CC=C21 WSUYONLKFXZZRV-UHFFFAOYSA-N 0.000 description 1
- BFBAHPDPLUEECU-UHFFFAOYSA-N 7-aminonaphthalene-1-carboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=CC(N)=CC=C21 BFBAHPDPLUEECU-UHFFFAOYSA-N 0.000 description 1
- ODPYDILFQYARBK-UHFFFAOYSA-N 7-thiabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2SC2=C1 ODPYDILFQYARBK-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- SNCJAJRILVFXAE-UHFFFAOYSA-N 9h-fluorene-2,7-diamine Chemical compound NC1=CC=C2C3=CC=C(N)C=C3CC2=C1 SNCJAJRILVFXAE-UHFFFAOYSA-N 0.000 description 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical group NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- 241000272478 Aquila Species 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- KYNSBQPICQTCGU-UHFFFAOYSA-N Benzopyrane Chemical group C1=CC=C2C=CCOC2=C1 KYNSBQPICQTCGU-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- YHHHEQVLWJQCOY-UHFFFAOYSA-N C(C)(=O)NN=C(C(=O)C1=CC=CC=C1)C Chemical compound C(C)(=O)NN=C(C(=O)C1=CC=CC=C1)C YHHHEQVLWJQCOY-UHFFFAOYSA-N 0.000 description 1
- FVLXSOBXEXWOMA-UHFFFAOYSA-N C(C)(C)NC(C(=C)C)=N Chemical compound C(C)(C)NC(C(=C)C)=N FVLXSOBXEXWOMA-UHFFFAOYSA-N 0.000 description 1
- RCNIOMUCGDHUNT-UHFFFAOYSA-N C(C=CCCCCCCCCCCCCCCCCCCCCCCCC(=O)O)(=O)O Chemical compound C(C=CCCCCCCCCCCCCCCCCCCCCCCCC(=O)O)(=O)O RCNIOMUCGDHUNT-UHFFFAOYSA-N 0.000 description 1
- SYSPOOPLPCVGLD-UHFFFAOYSA-N C1(=CC=C(C=C1)S(=O)(=O)OC(C(C=N)=O)C)C Chemical compound C1(=CC=C(C=C1)S(=O)(=O)OC(C(C=N)=O)C)C SYSPOOPLPCVGLD-UHFFFAOYSA-N 0.000 description 1
- GNLISHBGYQQRKB-UHFFFAOYSA-N C1=CC=CC1.C(C1=CC=CC=C1)(=O)O Chemical compound C1=CC=CC1.C(C1=CC=CC=C1)(=O)O GNLISHBGYQQRKB-UHFFFAOYSA-N 0.000 description 1
- DUUFVWIKTVQSCG-UHFFFAOYSA-N CC(=C)C.[O] Chemical group CC(=C)C.[O] DUUFVWIKTVQSCG-UHFFFAOYSA-N 0.000 description 1
- SQNXPWDKGDZRLM-UHFFFAOYSA-N CC1=C(CC2=C(C=CC=C2)P(C2=CC=CC=C2)(C2=CC=CC=3C4=CC=CC=C4CC23)=O)C(=CC(=C1)C)C Chemical compound CC1=C(CC2=C(C=CC=C2)P(C2=CC=CC=C2)(C2=CC=CC=3C4=CC=CC=C4CC23)=O)C(=CC(=C1)C)C SQNXPWDKGDZRLM-UHFFFAOYSA-N 0.000 description 1
- HOUQZKGEAMAJHC-UHFFFAOYSA-N CC1=CC(=CC(=C1OC2=CC=C(C=C2)N)C)C(C)(CF)C3=CC(=C(C(=C3)C)OC4=CC=C(C=C4)N)C Chemical compound CC1=CC(=CC(=C1OC2=CC=C(C=C2)N)C)C(C)(CF)C3=CC(=C(C(=C3)C)OC4=CC=C(C=C4)N)C HOUQZKGEAMAJHC-UHFFFAOYSA-N 0.000 description 1
- XDFJROAYCCNORU-UHFFFAOYSA-N CCC(=O)C(C)=NNC(C)=O Chemical compound CCC(=O)C(C)=NNC(C)=O XDFJROAYCCNORU-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical group NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 1
- 239000009261 D 400 Substances 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 206010024769 Local reaction Diseases 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- UBUCNCOMADRQHX-UHFFFAOYSA-N N-Nitrosodiphenylamine Chemical compound C=1C=CC=CC=1N(N=O)C1=CC=CC=C1 UBUCNCOMADRQHX-UHFFFAOYSA-N 0.000 description 1
- XQVWYOYUZDUNRW-UHFFFAOYSA-N N-Phenyl-1-naphthylamine Chemical compound C=1C=CC2=CC=CC=C2C=1NC1=CC=CC=C1 XQVWYOYUZDUNRW-UHFFFAOYSA-N 0.000 description 1
- AHRCSSVWZPPSQR-UHFFFAOYSA-N NC1=C(OC2=CC=C(C=C2)C2=C(C=3CC4=CC=CC=C4C3C=C2)C2=CC=C(C=C2)OC2=C(C=CC=C2)N)C=CC=C1 Chemical compound NC1=C(OC2=CC=C(C=C2)C2=C(C=3CC4=CC=CC=C4C3C=C2)C2=CC=C(C=C2)OC2=C(C=CC=C2)N)C=CC=C1 AHRCSSVWZPPSQR-UHFFFAOYSA-N 0.000 description 1
- SKUQFFVTELZULD-UHFFFAOYSA-N NC1=CC=CC=C1.NNC1=CC=C(C2=CC=C(NN)C=C2)C=C1 Chemical compound NC1=CC=CC=C1.NNC1=CC=C(C2=CC=C(NN)C=C2)C=C1 SKUQFFVTELZULD-UHFFFAOYSA-N 0.000 description 1
- UQSRDEJZZBVORS-UHFFFAOYSA-N NCCC[SiH](N([Si](C)(C)C)C)CCCN Chemical compound NCCC[SiH](N([Si](C)(C)C)C)CCCN UQSRDEJZZBVORS-UHFFFAOYSA-N 0.000 description 1
- IFAWYXIHOVRGHQ-UHFFFAOYSA-N Nonadecandioic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCCCC(O)=O IFAWYXIHOVRGHQ-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 239000005700 Putrescine Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000007877 V-601 Substances 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical group C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- BDYVWDMHYNGVGE-UHFFFAOYSA-N [2-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCCC1CN BDYVWDMHYNGVGE-UHFFFAOYSA-N 0.000 description 1
- YPCHGLDQZXOZFW-UHFFFAOYSA-N [2-[[4-methyl-3-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]carbonylamino]phenyl]carbamoyloxymethyl]-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound CC1=CC=C(NC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C)C=C1NC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C YPCHGLDQZXOZFW-UHFFFAOYSA-N 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- HIVQCJOGAHNXBO-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] propanoate Chemical compound CCC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C HIVQCJOGAHNXBO-UHFFFAOYSA-N 0.000 description 1
- OXIKYYJDTWKERT-UHFFFAOYSA-N [4-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCC(CN)CC1 OXIKYYJDTWKERT-UHFFFAOYSA-N 0.000 description 1
- PUBONXXOMJRGAN-UHFFFAOYSA-N [O].C=CCCC Chemical group [O].C=CCCC PUBONXXOMJRGAN-UHFFFAOYSA-N 0.000 description 1
- USDJGQLNFPZEON-UHFFFAOYSA-N [[4,6-bis(hydroxymethylamino)-1,3,5-triazin-2-yl]amino]methanol Chemical compound OCNC1=NC(NCO)=NC(NCO)=N1 USDJGQLNFPZEON-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- NJYZCEFQAIUHSD-UHFFFAOYSA-N acetoguanamine Chemical compound CC1=NC(N)=NC(N)=N1 NJYZCEFQAIUHSD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 238000007754 air knife coating Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 1
- 125000004848 alkoxyethyl group Chemical group 0.000 description 1
- 125000004457 alkyl amino carbonyl group Chemical group 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- MKSISPKJEMTIGI-LWTKGLMZSA-K aluminum (Z)-oxido-oxidoimino-phenylazanium Chemical compound [Al+3].[O-]\N=[N+](/[O-])c1ccccc1.[O-]\N=[N+](/[O-])c1ccccc1.[O-]\N=[N+](/[O-])c1ccccc1 MKSISPKJEMTIGI-LWTKGLMZSA-K 0.000 description 1
- 125000004202 aminomethyl group Chemical group [H]N([H])C([H])([H])* 0.000 description 1
- 229960004909 aminosalicylic acid Drugs 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 150000008365 aromatic ketones Chemical class 0.000 description 1
- 125000005100 aryl amino carbonyl group Chemical group 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- 125000005161 aryl oxy carbonyl group Chemical group 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- PAQKRBLMHQTWAS-UHFFFAOYSA-N azane;n-hydroxy-n-naphthalen-1-ylnitrous amide Chemical compound N.C1=CC=C2C(N(N=O)O)=CC=CC2=C1 PAQKRBLMHQTWAS-UHFFFAOYSA-N 0.000 description 1
- PBLWYVAEJYQTLU-UHFFFAOYSA-N azanium;3-phenylprop-2-enoate Chemical group [NH4+].[O-]C(=O)C=CC1=CC=CC=C1 PBLWYVAEJYQTLU-UHFFFAOYSA-N 0.000 description 1
- VCGNYVLXYFKXCS-UHFFFAOYSA-N azanium;docosanoate Chemical compound [NH4+].CCCCCCCCCCCCCCCCCCCCCC([O-])=O VCGNYVLXYFKXCS-UHFFFAOYSA-N 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- GSRFPZLAJMPCOU-UHFFFAOYSA-N benzene 1-benzofuran Chemical group C1=CC=CC=C1.C1=CC=C2OC=CC2=C1 GSRFPZLAJMPCOU-UHFFFAOYSA-N 0.000 description 1
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- TUQQUUXMCKXGDI-UHFFFAOYSA-N bis(3-aminophenyl)methanone Chemical compound NC1=CC=CC(C(=O)C=2C=C(N)C=CC=2)=C1 TUQQUUXMCKXGDI-UHFFFAOYSA-N 0.000 description 1
- FQUNFJULCYSSOP-UHFFFAOYSA-N bisoctrizole Chemical compound N1=C2C=CC=CC2=NN1C1=CC(C(C)(C)CC(C)(C)C)=CC(CC=2C(=C(C=C(C=2)C(C)(C)CC(C)(C)C)N2N=C3C=CC=CC3=N2)O)=C1O FQUNFJULCYSSOP-UHFFFAOYSA-N 0.000 description 1
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- 229940006460 bromide ion Drugs 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- IWPATTDMSUYMJV-UHFFFAOYSA-N butyl 2-methoxyacetate Chemical compound CCCCOC(=O)COC IWPATTDMSUYMJV-UHFFFAOYSA-N 0.000 description 1
- 125000004744 butyloxycarbonyl group Chemical group 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 150000004657 carbamic acid derivatives Chemical class 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 150000001768 cations Chemical group 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- QZHPTGXQGDFGEN-UHFFFAOYSA-N chromene Chemical group C1=CC=C2C=C[CH]OC2=C1 QZHPTGXQGDFGEN-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000002592 cumenyl group Chemical group C1(=C(C=CC=C1)*)C(C)C 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000002993 cycloalkylene group Chemical group 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N cyclobenzothiazole Natural products C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- SSJXIUAHEKJCMH-UHFFFAOYSA-N cyclohexane-1,2-diamine Chemical compound NC1CCCCC1N SSJXIUAHEKJCMH-UHFFFAOYSA-N 0.000 description 1
- GEQHKFFSPGPGLN-UHFFFAOYSA-N cyclohexane-1,3-diamine Chemical compound NC1CCCC(N)C1 GEQHKFFSPGPGLN-UHFFFAOYSA-N 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- UKJLNMAFNRKWGR-UHFFFAOYSA-N cyclohexatrienamine Chemical group NC1=CC=C=C[CH]1 UKJLNMAFNRKWGR-UHFFFAOYSA-N 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- MYJQGGALXPHWLV-UHFFFAOYSA-N cyclopentane-1,2-diamine Chemical compound NC1CCCC1N MYJQGGALXPHWLV-UHFFFAOYSA-N 0.000 description 1
- ZQWRZCZEOLZBQF-UHFFFAOYSA-N cyclopentane-1,3-diamine Chemical compound NC1CCC(N)C1 ZQWRZCZEOLZBQF-UHFFFAOYSA-N 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005595 deprotonation Effects 0.000 description 1
- 238000010537 deprotonation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 125000001142 dicarboxylic acid group Chemical group 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical group OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- OREAFAJWWJHCOT-UHFFFAOYSA-N dimethylmalonic acid Chemical compound OC(=O)C(C)(C)C(O)=O OREAFAJWWJHCOT-UHFFFAOYSA-N 0.000 description 1
- IPZJQDSFZGZEOY-UHFFFAOYSA-N dimethylmethylene Chemical group C[C]C IPZJQDSFZGZEOY-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 1
- JLEKJZUYWFJPMB-UHFFFAOYSA-N ethyl 2-methoxyacetate Chemical compound CCOC(=O)COC JLEKJZUYWFJPMB-UHFFFAOYSA-N 0.000 description 1
- WHRLOJCOIKOQGL-UHFFFAOYSA-N ethyl 2-methoxypropanoate Chemical compound CCOC(=O)C(C)OC WHRLOJCOIKOQGL-UHFFFAOYSA-N 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- UKFXDFUAPNAMPJ-UHFFFAOYSA-N ethylmalonic acid Chemical compound CCC(C(O)=O)C(O)=O UKFXDFUAPNAMPJ-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Substances CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine group Chemical group NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- 238000006358 imidation reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 150000004698 iron complex Chemical class 0.000 description 1
- YAQXGBBDJYBXKL-UHFFFAOYSA-N iron(2+);1,10-phenanthroline;dicyanide Chemical compound [Fe+2].N#[C-].N#[C-].C1=CN=C2C3=NC=CC=C3C=CC2=C1.C1=CN=C2C3=NC=CC=C3C=CC2=C1 YAQXGBBDJYBXKL-UHFFFAOYSA-N 0.000 description 1
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 1
- LDHQCZJRKDOVOX-IHWYPQMZSA-N isocrotonic acid Chemical compound C\C=C/C(O)=O LDHQCZJRKDOVOX-IHWYPQMZSA-N 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical group C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 description 1
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 1
- 125000000842 isoxazolyl group Chemical group 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 125000005439 maleimidyl group Chemical class C1(C=CC(N1*)=O)=O 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine powder Natural products NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- KBOPZPXVLCULAV-UHFFFAOYSA-N mesalamine Chemical compound NC1=CC=C(O)C(C(O)=O)=C1 KBOPZPXVLCULAV-UHFFFAOYSA-N 0.000 description 1
- 229960004963 mesalazine Drugs 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 description 1
- PPFNAOBWGRMDLL-UHFFFAOYSA-N methyl 2-ethoxyacetate Chemical compound CCOCC(=O)OC PPFNAOBWGRMDLL-UHFFFAOYSA-N 0.000 description 1
- YVWPDYFVVMNWDT-UHFFFAOYSA-N methyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OC YVWPDYFVVMNWDT-UHFFFAOYSA-N 0.000 description 1
- AKWHOGIYEOZALP-UHFFFAOYSA-N methyl 2-methoxy-2-methylpropanoate Chemical compound COC(=O)C(C)(C)OC AKWHOGIYEOZALP-UHFFFAOYSA-N 0.000 description 1
- XPIWVCAMONZQCP-UHFFFAOYSA-N methyl 2-oxobutanoate Chemical compound CCC(=O)C(=O)OC XPIWVCAMONZQCP-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 229940017219 methyl propionate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- 239000002365 multiple layer Substances 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- KADGVXXDDWDKBX-UHFFFAOYSA-N naphthalene-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C21 KADGVXXDDWDKBX-UHFFFAOYSA-N 0.000 description 1
- HDLRSIQOZFLEPK-UHFFFAOYSA-N naphthalene-1,2,5,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C2=C(C(O)=O)C(C(=O)O)=CC=C21 HDLRSIQOZFLEPK-UHFFFAOYSA-N 0.000 description 1
- DSCIZKMHZPGBNI-UHFFFAOYSA-N naphthalene-1,3,5,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C2=CC(C(=O)O)=CC(C(O)=O)=C21 DSCIZKMHZPGBNI-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- JGGWKXMPICYBKC-UHFFFAOYSA-N phenanthrene-1,8,9,10-tetracarboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=C(C(O)=O)C(C(O)=O)=C3C(C(=O)O)=CC=CC3=C21 JGGWKXMPICYBKC-UHFFFAOYSA-N 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 125000001484 phenothiazinyl group Chemical group C1(=CC=CC=2SC3=CC=CC=C3NC12)* 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000006678 phenoxycarbonyl group Chemical group 0.000 description 1
- DYFXGORUJGZJCA-UHFFFAOYSA-N phenylmethanediamine Chemical compound NC(N)C1=CC=CC=C1 DYFXGORUJGZJCA-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 125000004193 piperazinyl group Chemical group 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 238000010094 polymer processing Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000011085 pressure filtration Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- FBCQUCJYYPMKRO-UHFFFAOYSA-N prop-2-enyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC=C FBCQUCJYYPMKRO-UHFFFAOYSA-N 0.000 description 1
- AMCBXFAKLFFSQZ-UHFFFAOYSA-N propan-2-yl 2-methoxypropanoate Chemical compound COC(C)C(=O)OC(C)C AMCBXFAKLFFSQZ-UHFFFAOYSA-N 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- ILPVOWZUBFRIAX-UHFFFAOYSA-N propyl 2-oxopropanoate Chemical compound CCCOC(=O)C(C)=O ILPVOWZUBFRIAX-UHFFFAOYSA-N 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- MIROPXUFDXCYLG-UHFFFAOYSA-N pyridine-2,5-diamine Chemical compound NC1=CC=C(N)N=C1 MIROPXUFDXCYLG-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000006798 ring closing metathesis reaction Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 150000005846 sugar alcohols Chemical class 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- PEQHIRFAKIASBK-UHFFFAOYSA-N tetraphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 PEQHIRFAKIASBK-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 150000003568 thioethers Chemical group 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- DXNCZXXFRKPEPY-UHFFFAOYSA-N tridecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCC(O)=O DXNCZXXFRKPEPY-UHFFFAOYSA-N 0.000 description 1
- 125000004953 trihalomethyl group Chemical group 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N vinyl-ethylene Natural products C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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Abstract
Description
本發明是有關一種積層體的製造方法及電子元件的製造方法。The present invention relates to a method for manufacturing a laminated body and a method for manufacturing an electronic component.
聚醯亞胺和聚苯并噁唑等樹脂的耐熱性及絕緣性優異,因此使用於電子元件的絕緣層等中。又,聚醯亞胺和聚苯并噁唑對溶劑的溶解性低,因此還進行以環化反應前的前驅物(聚醯亞胺前驅物和聚苯并噁唑前驅物)的狀態應用到支撐體等之後,對其進行加熱而將聚醯亞胺前驅物和聚苯并噁唑前驅物進行環化來形成硬化膜之情況。Resins such as polyimide and polybenzoxazole are excellent in heat resistance and insulation properties, and are therefore used in insulating layers and the like of electronic components. In addition, polyfluorine and polybenzoxazole have low solubility in solvents. Therefore, they are also applied to precursors (polyfluorine imide and polybenzoxazole precursor) before the cyclization reaction. After the support body is heated, the polyimide precursor and the polybenzoxazole precursor are cyclized to form a cured film.
例如,專利文獻1、2中記載有使用包含聚醯亞胺前驅物和光聚合起始劑之感光性樹脂組成物而製造圖案硬化膜之情況。 [先前技術文獻] [專利文獻]For example, Patent Documents 1 and 2 describe a case where a pattern cured film is produced using a photosensitive resin composition containing a polyfluorene imide precursor and a photopolymerization initiator. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本特開2011-191749號公報 [專利文獻2]日本特開2014-201695號公報[Patent Document 1] Japanese Patent Laid-Open No. 2011-191749 [Patent Document 2] Japanese Patent Laid-Open No. 2014-201695
本發明人對包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中之樹脂和光聚合起始劑之感光性樹脂組成物進行了研究之結果,得知使用包含該些樹脂之感光性樹脂組成物而形成之膜有時與支撐體或金屬層等的黏合性不夠充分。The present inventors studied a photosensitive resin composition containing a resin and a photopolymerization initiator selected from the group consisting of a polyimide precursor, a polyimide, a polybenzoxazole precursor, and a polybenzoxazole. As a result, it was found that the film formed using the photosensitive resin composition containing these resins may not have sufficient adhesion to a support, a metal layer, or the like.
本發明的目的在於提供一種黏合性優異之積層體的製造方法及電子元件的製造方法。An object of the present invention is to provide a method for producing a laminated body having excellent adhesion and a method for producing an electronic component.
基於上述問題,發明人進行了研究之結果,發現如下傾向,亦即將使用包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中之樹脂和光聚合起始劑之感光性樹脂組成物而形成之膜應用於支撐體上之後至膜的性狀穩定需要時間之傾向。而且,發現藉由後述各製程之間中的任一個中,藉由設置規定的保存製程,能夠製造黏合性優異之積層體,以至解決了上述問題。本發明提供以下。 <1>一種積層體的製造方法,其包括: 感光性樹脂組成物層形成製程,於支撐體上應用包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中之樹脂和光聚合起始劑之感光性樹脂組成物而形成感光性樹脂組成物層; 曝光製程,將感光性樹脂組成物層曝光成圖案狀; 顯影製程,對感光性樹脂組成物層進行顯影而形成圖案; 加熱製程,對圖案進行加熱;以及 金屬層形成製程,於加熱後的圖案上形成金屬層;並且 於感光性樹脂組成物層形成製程與曝光製程之間、曝光製程與顯影製程之間、顯影製程與加熱製程之間及加熱製程與金屬層形成製程之間中的至少一個中,進行保存製程,該保存製程中,於表面溫度達到一定溫度之後,於該狀態下保存5分鐘以上。 <2>如<1>所述之積層體的製造方法,其中 於曝光製程與顯影製程之間進行保存製程。 <3>如<2>所述之積層體的製造方法,其中 於曝光製程與顯影製程之間進行之保存製程滿足下述式, 5≤t1<(10-0.036×T1+12.3 )×60 T1為於曝光製程與顯影製程之間進行之保存製程中的平均表面溫度且單位為K,t1為於曝光製程與顯影製程之間進行之保存製程的時間且單位為分鐘。 <4>如<1>~<3>中任一項所述之積層體的製造方法,其中 於感光性樹脂組成物層形成製程與曝光製程之間進行保存製程。 <5>如<4>所述之積層體的製造方法,其中 於感光性樹脂組成物層形成製程與曝光製程之間進行之保存製程滿足下述式, 5≤t2<(10-0.031×T2+10.7 )×60 T2為於感光性樹脂組成物層形成製程與曝光製程之間進行之保存製程中的平均表面溫度且單位為K,t2為於感光性樹脂組成物層形成製程與曝光製程之間進行之保存製程的時間且單位為分鐘。 <6>如<1>~<5>中任一項所述之積層體的製造方法,其中 於顯影製程與加熱製程之間進行保存製程。 <7>如<6>所述之積層體的製造方法,其中 於顯影製程與加熱製程之間進行之保存製程滿足下述式, 5≤t3<(10-0.02×T3+8.0 )×60 T3為於顯影製程與加熱製程之間進行之保存製程中的平均表面溫度且單位為K,t3為於顯影製程與加熱製程之間進行之保存製程的時間且單位為分鐘。 <8>如<1>~<7>中任一項所述之積層體的製造方法,其中 於加熱製程與金屬層形成製程之間進行保存製程。 <9>如<1>~<8>中任一項所述之積層體的製造方法,其中 感光性樹脂組成物中的樹脂是聚醯亞胺前驅物, 聚醯亞胺前驅物包含自由基聚合性基,或者感光性樹脂組成物包含除聚醯亞胺前驅物以外的自由基聚合性化合物。 <10>如<1>~<9>中任一項所述之積層體的製造方法,其中 聚醯亞胺前驅物包括由下述式(1)表示之重複單元。 式(1) [化學式1]式(1)中,A21 及A22 分別獨立地表示氧原子或-NH-,R21 表示2價有機基,R22 表示4價有機基,R23 及R24 分別獨立地表示氫原子或1價有機基 <11>如<10>所述之積層體的製造方法,其中 式(1)中,R23 及R24 中的至少一個包含自由基聚合性基。 <12>如<10>或<11>所述之積層體的製造方法,其中 式(1)中的R22 是包含芳香環之4價基團。 <13>如<1>~<12>中任一項所述之積層體的製造方法,其中 將如下一系列的循環進行2循環以上,亦即於金屬層形成製程後的圖案上,依序進行感光性樹脂組成物層形成製程、曝光製程、顯影製程、加熱製程及金屬層形成製程,且將於感光性樹脂組成物層形成製程與曝光製程之間、曝光製程與顯影製程之間、顯影製程與加熱製程之間及加熱製程與金屬層形成製程之間中的至少一個中,進行保存製程 。 <14>如<1>~<13>中任一項所述之積層體的製造方法,其為複數層配線結構的積層體的製造方法。 <15>一種電子元件的製造方法,其包括: 感光性樹脂組成物層形成製程,於支撐體上應用包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中之樹脂和光聚合起始劑之感光性樹脂組成物而形成感光性樹脂組成物層; 曝光製程,將感光性樹脂組成物層曝光成圖案狀; 顯影製程,對感光性樹脂組成物層進行顯影而形成圖案; 加熱製程,對圖案進行加熱;以及 金屬層形成製程,於加熱後的圖案上形成金屬層;並且 於感光性樹脂組成物層形成製程與曝光製程之間、曝光製程與顯影製程之間、顯影製程與加熱製程之間及加熱製程與金屬層形成製程之間中的至少一個中,進行保存製程,該保存製程中,於表面溫度達到一定溫度之後,於該狀態下保存5分鐘以上。 <16> 如<15>所述之電子元件的製造方法,其中 於相同的保存製程的條件下製造複數個電子元件。 [發明效果]Based on the above problems, the inventors conducted research and found that there is a tendency to use a resin containing a polyimide precursor, a polyimide, a polybenzoxazole precursor, and a polybenzoxazole. After the film formed of the photosensitive resin composition of the photopolymerization initiator is applied to the support, it takes time to stabilize the properties of the film. In addition, it was found that by setting a predetermined storage process in any of the processes described later, a laminated body having excellent adhesion can be manufactured, and the above-mentioned problems are solved. The present invention provides the following. <1> A method for manufacturing a laminated body, comprising: a process for forming a photosensitive resin composition layer; and applying, on a support, a material selected from the group consisting of a polyimide precursor, a polyimide, a polybenzoxazole precursor, and The photosensitive resin composition of the resin in the polybenzoxazole and the photopolymerization initiator forms a photosensitive resin composition layer; an exposure process, which exposes the photosensitive resin composition layer into a pattern; a development process, the photosensitive resin The composition layer is developed to form a pattern; a heating process to heat the pattern; and a metal layer formation process to form a metal layer on the heated pattern; and between the photosensitive resin composition layer formation process and the exposure process, exposure is performed. A preservation process is performed in at least one of the manufacturing process and the development process, between the developing process and the heating process, and between the heating process and the metal layer forming process. In the storage process, after the surface temperature reaches a certain temperature, the state is maintained in this state. Save for more than 5 minutes. <2> The method for manufacturing a laminated body according to <1>, wherein a storage process is performed between the exposure process and the development process. <3> The method for manufacturing a laminated body according to <2>, wherein the storage process performed between the exposure process and the development process satisfies the following formula, 5 ≦ t1 <(10 -0.036 × T1 + 12.3 ) × 60 T1 It is the average surface temperature in the preservation process performed between the exposure process and the development process and the unit is K, and t1 is the time of the preservation process performed between the exposure process and the development process and the unit is minute. <4> The method for producing a laminated body according to any one of <1> to <3>, wherein a storage process is performed between the photosensitive resin composition layer forming process and the exposure process. <5> The method for manufacturing a multilayer body according to <4>, wherein the storage process performed between the photosensitive resin composition layer forming process and the exposure process satisfies the following formula, 5 ≦ t2 <(10 -0.031 × T2 +10.7 ) × 60 T2 is the average surface temperature in the storage process between the photosensitive resin composition layer formation process and the exposure process and the unit is K, t2 is the photosensitive resin composition layer formation process and the exposure process The time of the save process in minutes. <6> The method for producing a laminated body according to any one of <1> to <5>, wherein a storage process is performed between a development process and a heating process. <7> The method for manufacturing a laminated body according to <6>, wherein the storage process performed between the development process and the heating process satisfies the following formula, 5 ≦ t3 <(10 -0.02 × T3 + 8.0 ) × 60 T3 It is the average surface temperature in the storage process between the development process and the heating process and the unit is K, and t3 is the time of the storage process between the development process and the heating process and the unit is minute. <8> The method for producing a laminated body according to any one of <1> to <7>, wherein a storage process is performed between the heating process and the metal layer forming process. <9> The method for producing a laminated body according to any one of <1> to <8>, wherein the resin in the photosensitive resin composition is a polyimide precursor, and the polyimide precursor contains a radical The polymerizable group or the photosensitive resin composition contains a radical polymerizable compound other than a polyimide precursor. <10> The method for producing a laminate according to any one of <1> to <9>, wherein the polyfluorene imide precursor includes a repeating unit represented by the following formula (1). Formula (1) [Chemical Formula 1] In formula (1), A 21 and A 22 each independently represent an oxygen atom or -NH-, R 21 represents a divalent organic group, R 22 represents a tetravalent organic group, and R 23 and R 24 each independently represent a hydrogen atom or The monovalent organic group <11> The method for producing a multilayer body according to <10>, wherein at least one of R 23 and R 24 in the formula (1) includes a radical polymerizable group. <12> The method for producing a laminated body according to <10> or <11>, wherein R 22 in the formula (1) is a tetravalent group containing an aromatic ring. <13> The method for manufacturing a laminated body according to any one of <1> to <12>, wherein the following series of cycles are performed for more than 2 cycles, that is, sequentially on the pattern after the metal layer forming process, in order The photosensitive resin composition layer formation process, the exposure process, the development process, the heating process, and the metal layer formation process are performed, and between the photosensitive resin composition layer formation process and the exposure process, between the exposure process and the development process, and development A preservation process is performed between at least one of the manufacturing process and the heating process and between the heating process and the metal layer forming process. <14> The manufacturing method of the laminated body as described in any one of <1>-<13> which is a manufacturing method of the laminated body of a multiple-layer wiring structure. <15> A method for manufacturing an electronic component, comprising: a process for forming a photosensitive resin composition layer; and applying, on a support, a material selected from a polyimide precursor, a polyimide, a polybenzoxazole precursor, and The photosensitive resin composition of the resin in the polybenzoxazole and the photopolymerization initiator forms a photosensitive resin composition layer; an exposure process, which exposes the photosensitive resin composition layer into a pattern; a development process, the photosensitive resin The composition layer is developed to form a pattern; a heating process to heat the pattern; and a metal layer formation process to form a metal layer on the heated pattern; and between the photosensitive resin composition layer formation process and the exposure process, exposure is performed. A preservation process is performed in at least one of the manufacturing process and the development process, between the developing process and the heating process, and between the heating process and the metal layer forming process. In the storage process, after the surface temperature reaches a certain temperature, the state is maintained in this state. Save for more than 5 minutes. <16> The method for manufacturing an electronic component according to <15>, wherein a plurality of electronic components are manufactured under the same storage process conditions. [Inventive effect]
依本發明,能夠提供一種黏合性優異之積層體的製造方法及電子元件的製造方法。According to the present invention, it is possible to provide a method for manufacturing a laminated body having excellent adhesion and a method for manufacturing an electronic component.
以下所記載之本發明中的構成要件的說明有時基於本發明的代表性實施形態而進行,但本發明並不限定於該種實施形態。 本說明書中的基團(原子團)的標記中,未記錄經取代及未經取代之標記是同時包含不具有取代基之基團和具有取代基之基團。例如,「烷基」不僅包含不具有取代基之烷基(未經取代之烷基),還包含具有取代基之烷基(取代烷基)。 本說明書中「曝光」只要無特別限定,除了利用光的曝光以外,利用電子束、離子束等粒子束之描繪亦包含於曝光中。又,作為使用於曝光之光,通常可列舉以水銀燈的明線光譜、準分子雷射為代表之遠紫外線、極紫外線(EUV光)、X射線、電子束等光化射線或放射線。 本說明書中,利用「~」表示之數值範圍是指將記載於「~」前後之數值作為下限值及上限值而包含之範圍。 本說明書中,「(甲基)丙烯酸酯」表示「丙烯酸酯」及「甲基丙烯酸酯」這兩者或其中任一個,「(甲基)烯丙基」表示「烯丙基」及「甲基烯丙基」兩者或其中任一個,「(甲基)丙烯酸」表示「丙烯酸」及「甲基丙烯酸」這兩者或其中任一個,「(甲基)丙烯醯基」表示「丙烯醯基」及「甲基丙烯醯基」這兩者或其中任一個。 本說明書中,「製程」這一術語,不僅是獨立的製程,而且即使於無法與其他製程明確區分之情況下,若可實現對該製程所預期之作用,則亦包含於本術語中。 本說明書中,固體成分濃度是指相對於組成物的總質量之除了溶劑以外的成分的質量百分率。又,只要沒有特別記載,則固體成分濃度是指25℃下的濃度。 本說明書中,只要沒有特別記載,則重量平均分子量(Mw)及數平均分子量(Mn)基於凝膠滲透層析法(GPC)測定,並作為苯乙烯換算值而定義。本說明書中,重量平均分子量(Mw)及數平均分子量(Mn)例如能夠利用HLC-8220(TOSOH CORPORATION製),並作為管柱而使用保護管柱HZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000及TSKgel Super HZ2000(TOSOH CORPORATION製)而求出。只要沒有特別記載,則將洗提液設為利用THF(四氫呋喃)進行測定者。又,只要沒有特別記載,則將檢測設為使用了UV線(紫外線)的波長254nm檢測器者。The description of the constituent elements in the present invention described below may be made based on a representative embodiment of the present invention, but the present invention is not limited to this embodiment. In the description of the group (atomic group) label in this specification, unrecorded and unsubstituted labels include both a group having no substituent and a group having a substituent. For example, "alkyl" includes not only an alkyl group (unsubstituted alkyl group) having no substituent, but also an alkyl group (substituted alkyl group) having a substituent. As long as "exposure" is not specifically limited in this specification, in addition to exposure using light, the drawing using a particle beam such as an electron beam and an ion beam is also included in the exposure. In addition, as the light used for the exposure, actinic rays such as bright line spectrum of a mercury lamp, excimer laser, extreme ultraviolet (EUV light), X-rays, and electron beams, or radiation are generally mentioned. In the present specification, a numerical range indicated by "~" means a range including numerical values described before and after "~" as a lower limit value and an upper limit value. In this specification, "(meth) acrylate" means either or both "acrylate" and "methacrylate", and "(meth) allyl" means "allyl" and "formyl" "(Meth) acrylic" means either or both of "acrylic" and "methacrylic", and "(meth) acryl" refers to "acryl" Or "methacryl". In this specification, the term "process" is not only an independent process, but even if it cannot be clearly distinguished from other processes, if the expected effect of the process can be achieved, it is also included in this term. In the present specification, the solid content concentration refers to the mass percentage of components other than the solvent with respect to the total mass of the composition. In addition, unless otherwise stated, the solid content concentration means the concentration at 25 ° C. In this specification, unless otherwise stated, weight average molecular weight (Mw) and number average molecular weight (Mn) are measured based on gel permeation chromatography (GPC), and are defined as styrene conversion values. In this specification, for example, HLC-8220 (manufactured by TOSOH CORPORATION) can be used as the weight average molecular weight (Mw) and the number average molecular weight (Mn), and the protective column HZ-L, TSKgel Super HZM-M, and TSKgel Super can be used as the column. HZ4000, TSKgel Super HZ3000 and TSKgel Super HZ2000 (manufactured by TOSOH CORPORATION). Unless otherwise stated, the eluent was measured by THF (tetrahydrofuran). In addition, unless otherwise stated, the detection was performed using a wavelength 254 nm detector using UV rays (ultraviolet rays).
<積層體的製造方法> 本發明的積層體的製造方法的特徵為,包括: 感光性樹脂組成物層形成製程,於支撐體上應用包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中之樹脂和光聚合起始劑之感光性樹脂組成物而形成感光性樹脂組成物層; 曝光製程,將感光性樹脂組成物層曝光成圖案狀; 顯影製程,對感光性樹脂組成物層進行顯影而形成圖案; 加熱製程,對圖案進行加熱;及 金屬層形成製程,於加熱後的圖案上形成金屬層, 於感光性樹脂組成物層形成製程與曝光製程之間、曝光製程與顯影製程之間、顯影製程與加熱製程之間及加熱製程與金屬層形成製程之間中的至少一個中,進行保存製程,該保存製成中,於表面溫度達到一定溫度之後,於該狀態下保存5分鐘以上。<The manufacturing method of a laminated body> The manufacturing method of the laminated body of this invention is characterized by including the process of forming a photosensitive resin composition layer, and apply | coating on a support body containing the material selected from polyimide precursor, polyimide, A polybenzoxazole precursor and a photosensitive resin composition of a resin and a photopolymerization initiator in the polybenzoxazole to form a photosensitive resin composition layer; the exposure process exposes the photosensitive resin composition layer into a pattern ; A development process for developing a pattern on the photosensitive resin composition layer to form a pattern; a heating process for heating the pattern; and a metal layer formation process for forming a metal layer on the heated pattern and forming a process on the photosensitive resin composition layer And at least one of the exposure process, the exposure process and the development process, the development process and the heating process, and the heating process and the metal layer formation process, a preservation process is performed, and the preservation process is performed at the surface temperature After reaching a certain temperature, store in this state for more than 5 minutes.
依本發明,能夠形成黏合性優異之積層體。作為能夠得到該種效果之理由,推測基於以下者。使用包含上述樹脂和光聚合起始劑之感光性樹脂組成物而形成之膜具有直至膜的性狀變穩定為止需要時間之傾向。認為若於膜的性狀不穩定之狀態下進行下一製程的處理(例如,於感光性樹脂組成物層形成製程後,繼而進行曝光製程之情況等),則於膜中產生進行局部反應之部位等,從而對膜施加局部應力。相對於此,認為依本發明,於上述各製程中的任意期間,設置上述保存製程,能夠使膜的性狀變穩定,且於使膜的殘留應力等緩和之狀態下進行下一製程的處理。因此,推測能夠製造黏合性優異之積層體。 又,感光性樹脂組成物中的上述樹脂為聚醯亞胺前驅物,使用了該聚醯亞胺前驅物包含自由基聚合性基或包含除上述聚醯亞胺前驅物以外的自由基聚合性化合物之感光性樹脂組成物之情況下,本發明的效果尤其顯著。詳細的理由雖不明確,但使用了包含該種自由基聚合性成分(具有自由基聚合性基之聚醯亞胺前驅物、除聚醯亞胺前驅物以外的自由基聚合性化合物)之感光性樹脂之情況下,曝光製程及顯影製程時,利用基於自由基聚合性成分的自由基聚合的交聯反應來形成圖案,於加熱製程中以高溫對所得到之圖案進行加熱而引發醯亞胺化反應來形成高耐熱、高絕緣性膜。如此,使用了包含上述自由基聚合性成分之感光性組成物之情況下,反應為多個階段且複雜,但推測藉由設置上述保存製程,能夠使膜的微狀態穩定,且能夠使所形成之膜的性質穩定而製造黏合性優異之積層體。 以下,對本發明的積層體的製造方法中的各製程進行說明。According to the present invention, a laminated body having excellent adhesion can be formed. The reason why such an effect can be obtained is estimated based on the following. The film formed using the photosensitive resin composition containing the above-mentioned resin and a photopolymerization initiator tends to take time until the properties of the film become stable. It is considered that if the processing of the next process is performed in a state where the properties of the film are unstable (for example, after the photosensitive resin composition layer formation process is followed by the exposure process, etc.), a local reaction site is generated in the film. Etc., thereby applying local stress to the film. On the other hand, according to the present invention, it is considered that by providing the storage process during any of the processes described above, the properties of the film can be stabilized, and the processing of the next process can be performed while the residual stress of the film is relaxed. Therefore, it is estimated that a laminated body having excellent adhesion can be produced. The resin in the photosensitive resin composition is a polyimide precursor, and the polyimide precursor contains a radical polymerizable group or contains a radical polymerizable property other than the polyimide precursor. In the case of the photosensitive resin composition of a compound, the effect of the present invention is particularly remarkable. Although the detailed reason is not clear, a photosensitizer containing such a radical polymerizable component (a polyimide precursor having a radical polymerizable group and a radical polymerizable compound other than the polyimide precursor) is used. In the case of a flexible resin, during the exposure process and the development process, a pattern is formed by using a cross-linking reaction of radical polymerization based on a radical polymerizable component, and the obtained pattern is heated at a high temperature during the heating process to cause fluorene imine. Chemical reaction to form a highly heat-resistant and highly insulating film. As described above, in the case where a photosensitive composition containing the radical polymerizable component is used, the reaction is multi-stage and complicated, but it is estimated that by setting the storage process described above, the microstate of the film can be stabilized and the formed film can be formed. The properties of the film are stable and a laminated body having excellent adhesion is produced. Hereinafter, each process in the manufacturing method of the laminated body of this invention is demonstrated.
(感光性樹脂組成物層形成製程) 本發明的積層體的製造方法包括將感光性樹脂組成物應用於支撐體上而形成感光性樹脂組成物層之感光性樹脂組成物層形成製程。於後面對感光性樹脂組成物進行敘述。(Photosensitive resin composition layer forming process) The manufacturing method of the laminated body of this invention includes the photosensitive resin composition layer forming process which applies a photosensitive resin composition to a support body, and forms a photosensitive resin composition layer. The photosensitive resin composition will be described later.
支撐體的種類能夠依用途而適當確定。例如,可列舉無機基板、樹脂基板、樹脂複合材料基板等。作為無機基板,例如可列舉玻璃基板,石英基板,矽基板,氮化矽(silicon nitride)基板,以及於如該些般的基板上蒸鍍鉬、鈦、鋁、銅等而成的複合基板。作為樹脂基板,可列舉包含聚對苯二甲酸丁二酯、聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚萘二甲酸丁醇二酯、聚苯乙烯、聚碳酸酯、聚碸、聚醚碸、聚芳酯、烯丙基二乙二醇碳酸酯、聚醯胺、聚醯亞胺、聚醯胺醯亞胺、聚醚醯亞胺、聚吲哚、聚苯硫醚、聚環烯烴、降冰片烯樹脂、聚氯三氟乙烯等氟樹脂、液晶聚合物、丙烯酸樹脂、環氧樹脂、矽酮樹脂、離子聚合物樹脂、氰酸酯樹脂、交聯反丁烯二酸二酯、環狀聚烯烴、芳香族醚、順丁烯二醯亞胺、烯烴、纖維素、環硫化合物等合成樹脂的基板。該些基板直接以所述形態使用的情況少,通常依最終製品的形態,例如形成有如薄膜電晶體(TFT)元件般的複數層積層結構。此外,感光性樹脂組成物層的表面或金屬層的表面進而形成感光性樹脂組成物層之情況下,感光性樹脂組成物層或金屬層成為支撐體。The type of the support can be appropriately determined depending on the application. Examples include inorganic substrates, resin substrates, and resin composite substrates. Examples of the inorganic substrate include a glass substrate, a quartz substrate, a silicon substrate, a silicon nitride substrate, and a composite substrate in which molybdenum, titanium, aluminum, copper, or the like is vapor-deposited on such substrates. Examples of the resin substrate include polybutylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, polybutylene naphthalate, polystyrene, and polycarbonate. Ester, polyfluorene, polyetherfluorene, polyarylate, allyl diethylene glycol carbonate, polyfluorene, polyfluorene, polyfluorene, imine, polyether, imine, polyindole, poly Fluorine resins such as phenylene sulfide, polycyclic olefins, norbornene resins, polychlorotrifluoroethylene, liquid crystal polymers, acrylic resins, epoxy resins, silicone resins, ionic polymer resins, cyanate resins, cross-linking resins Substrates of synthetic resins such as butadiene diesters, cyclic polyolefins, aromatic ethers, maleimides, olefins, cellulose, and episulfide compounds. These substrates are rarely used directly in the above-mentioned form, and generally, depending on the form of the final product, for example, a multilayer structure such as a thin film transistor (TFT) element is formed. When the surface of the photosensitive resin composition layer or the surface of the metal layer further forms the photosensitive resin composition layer, the photosensitive resin composition layer or the metal layer becomes a support.
作為針對支撐體的感光性樹脂組成物的應用方法,塗佈為較佳。作為具體的應用方法,可例示浸漬塗佈法、氣刀塗佈法、簾式塗佈法、線棒塗佈法、凹版塗佈法、擠出塗佈法、旋轉塗佈法、狹縫掃描法、噴墨法等。從感光性樹脂組成物層的厚度的均勻性的觀點考慮,更佳為旋轉塗佈法。當為旋轉塗佈法時,例如能夠以500~2000rpm的轉速應用10秒鐘~1分鐘左右。 關於感光性樹脂組成物層的厚度,以曝光後的膜厚成為0.1~100μm之方式進行塗佈為較佳,以成為1~50μm之方式進行塗佈為更佳。又,所形成之感光性樹脂組成物層的厚度未必一定均勻。例如,當於具有凹凸之表面上形成感光性樹脂組成物層時,有時成為厚度不同之感光性樹脂組成物層。As a method of applying the photosensitive resin composition to the support, coating is preferred. Specific application methods include dip coating method, air knife coating method, curtain coating method, wire rod coating method, gravure coating method, extrusion coating method, spin coating method, and slit scanning. Method, inkjet method, etc. From the viewpoint of the uniformity of the thickness of the photosensitive resin composition layer, a spin coating method is more preferred. In the case of the spin coating method, it can be applied at a rotation speed of 500 to 2000 rpm for about 10 seconds to 1 minute. The thickness of the photosensitive resin composition layer is preferably applied so that the film thickness after exposure becomes 0.1 to 100 μm, and more preferably applied so that it becomes 1 to 50 μm. The thickness of the photosensitive resin composition layer to be formed is not necessarily uniform. For example, when a photosensitive resin composition layer is formed on a surface having irregularities, it may become a photosensitive resin composition layer having a different thickness.
於感光性樹脂組成物層形成製程中,可以對形成在支撐體上之感光性樹脂組成物層進行乾燥。乾燥溫度是50~150℃為較佳,70~130℃為更佳,90~110℃為進一步較佳。乾燥時間是30秒鐘~20分鐘為較佳,1~10分鐘為更佳,3~7分鐘為進一步較佳。此外,乾燥處理是於本發明中的保存製程不同之製程。In the process of forming the photosensitive resin composition layer, the photosensitive resin composition layer formed on the support may be dried. The drying temperature is preferably 50 to 150 ° C, more preferably 70 to 130 ° C, and even more preferably 90 to 110 ° C. The drying time is preferably 30 seconds to 20 minutes, more preferably 1 to 10 minutes, and even more preferably 3 to 7 minutes. In addition, the drying process is a process different from the storage process in the present invention.
(曝光製程) 本發明的積層體的製造方法中,包括對上述感光性樹脂組成物層進行圖案狀曝光之曝光製程。關於曝光,只要能夠使感光性樹脂組成物硬化,則並無特別限定,例如以波長365nm曝光能量換算為100~10000mJ/cm2 進行為較佳,以200~8000mJ/cm2 進行為更佳。曝光波長能夠於190~1000nm的範圍適當設定,240~550nm為較佳。(Exposure process) The manufacturing method of the laminated body of this invention includes the exposure process of pattern-wise exposing the said photosensitive resin composition layer. The exposure is not particularly limited as long as the photosensitive resin composition can be cured. For example, it is preferably performed at 100 to 10,000 mJ / cm 2 in terms of exposure energy at a wavelength of 365 nm, and more preferably 200 to 8000 mJ / cm 2 . The exposure wavelength can be appropriately set in a range of 190 to 1000 nm, and 240 to 550 nm is preferable.
(顯影製程) 本發明的積層體的製造方法包括相對於已曝光之感光性樹脂組成物層,對感光性樹脂組成物層進行顯影而形成圖案之顯影製程。顯影使用顯影液來進行。顯影液能夠無特別限制地使用。溶劑為較佳。作為顯影液中所使用之溶劑,可列舉酯類、醚類、酮類、芳香族烴類、亞碸類等有機溶劑。關於該些的詳細內容,可列舉於後述樹脂組成物的欄中進行說明之溶劑。 其中,3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲基醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、環戊酮、γ-丁內酯、二甲基亞碸、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲基醚及丙二醇甲基醚乙酸酯為較佳,環戊酮、γ-丁內酯為更佳。(Developing Process) The manufacturing method of the laminated body of the present invention includes a developing process of developing a pattern on the photosensitive resin composition layer with respect to the exposed photosensitive resin composition layer. The development is performed using a developing solution. The developer can be used without particular limitation. A solvent is preferred. Examples of the solvent used in the developer include organic solvents such as esters, ethers, ketones, aromatic hydrocarbons, and fluorenes. About these details, the solvent demonstrated in the column of the resin composition mentioned later is mentioned. Among them, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, 3- Methyl methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, dimethylsulfinium, ethylcarbitol acetate, butylcarbitol acetate Propylene glycol methyl ether and propylene glycol methyl ether acetate are more preferred, and cyclopentanone and γ-butyrolactone are more preferred.
作為顯影時間,10秒鐘~5分鐘為較佳。顯影時的溫度並無特別限定,能夠於20~40℃下進行。於使用了顯影液之處理之後,可以進而進行沖洗。沖洗時使用與顯影液不同之溶劑進行為較佳。例如,能夠使用感光性樹脂組成物中所含有之溶劑進行沖洗。沖洗時間是5秒鐘~1分鐘為較佳。The development time is preferably 10 seconds to 5 minutes. The temperature during development is not particularly limited, and it can be performed at 20 to 40 ° C. After the treatment using the developing solution, processing can be further performed. It is preferable to use a solvent different from the developer when developing. For example, it is possible to perform washing using a solvent contained in the photosensitive resin composition. The rinse time is preferably 5 seconds to 1 minute.
(加熱製程) 本發明的積層體的製造方法包括對藉由顯影製程而得到之圖案(樹脂層)進行加熱之加熱製程。於加熱製程中,進行聚醯亞胺前驅物等的環化反應。又,還進行未反應的自由基聚合性成分的硬化等。作為最高加熱溫度(加熱時的最高溫度),100~500℃為較佳,140~400℃為更佳,160~350℃為進一步較佳。 關於加熱,從20~150℃的溫度至最高加熱溫度以1~12℃/分鐘的升溫速度進行為較佳,2~10℃/分鐘為更佳,3~10℃/分鐘為進一步較佳。藉由將升溫速度設為2℃/分鐘以上,能夠確保高生產率的同時防止胺過於揮發,且藉由將升溫速度設為12℃/分鐘以下,能夠使於所得到之膜中殘存之應力緩和。 加熱開始時的溫度是20~150℃為較佳,20℃~130℃為更佳,25℃~120℃為進一步較佳。加熱開始時的溫度是指,開始進行加熱至最高加熱溫度之製程時的加熱溫度。例如,將感光性樹脂組成物應用於基板上之後,使其乾燥時,為該乾燥後的溫度,例如,從比感光性樹脂組成物中所含有之溶劑的沸點低30~200℃的溫度逐漸升溫為較佳。 關於加熱,於達到最高加熱溫度之後,進行10~360分鐘的加熱為較佳,進行20~300分鐘加熱為進一步較佳,進行30~240分鐘加熱為特佳。(Heating process) The manufacturing method of the laminated body of this invention includes the heating process which heats the pattern (resin layer) obtained by the development process. In the heating process, a cyclization reaction such as a polyfluorene imide precursor is performed. In addition, curing of unreacted radical polymerizable components is also performed. The maximum heating temperature (highest temperature during heating) is preferably 100 to 500 ° C, more preferably 140 to 400 ° C, and even more preferably 160 to 350 ° C. Regarding heating, it is preferred to perform the heating at a temperature increase rate of 1 to 12 ° C./minute from a temperature of 20 to 150 ° C., more preferably 2 to 10 ° C./minute, and even more preferably 3 to 10 ° C./minute. By setting the temperature increase rate to 2 ° C / min or more, it is possible to ensure high productivity while preventing the amine from being too volatilized, and by setting the temperature increase rate to 12 ° C / min or less, the stress remaining in the obtained film can be relaxed. . The temperature at the start of heating is preferably 20 to 150 ° C, more preferably 20 to 130 ° C, and even more preferably 25 to 120 ° C. The temperature at the start of heating refers to the heating temperature at the time when the process of heating to the highest heating temperature is started. For example, when the photosensitive resin composition is applied to a substrate and dried, the temperature after drying is, for example, gradually lowered from a temperature of 30 to 200 ° C. below the boiling point of the solvent contained in the photosensitive resin composition. It is better to heat up. Regarding heating, after reaching the maximum heating temperature, heating for 10 to 360 minutes is preferable, heating for 20 to 300 minutes is more preferable, and heating for 30 to 240 minutes is particularly preferable.
加熱可以階段性進行。作為例,可列舉以3℃/分鐘分從25℃升溫至180℃,於180℃下放置60分鐘,且以2℃/分鐘從180℃升溫至200℃,於200℃下放置120分鐘支製程。 進而,可以於加熱後冷卻,作為該情況下的冷卻速度,1~5℃/分鐘為較佳。Heating can be performed in stages. By way of example, the temperature can be raised from 25 ° C to 180 ° C at 3 ° C / minute, left at 180 ° C for 60 minutes, and raised from 180 ° C to 200 ° C at 2 ° C / minute, and left at 200 ° C for 120 minutes. . Furthermore, it may be cooled after heating, and the cooling rate in this case is preferably 1 to 5 ° C / minute.
關於加熱製程,從防止聚醯亞胺前驅物的分解之方面考慮,藉由使氮、氦、氬等惰性氣體流動,於低氧濃度的環境下進行為較佳。氧濃度是50體積ppm以下為較佳,20體積ppm以下為更佳。Regarding the heating process, from the viewpoint of preventing the decomposition of the polyimide precursor, it is preferable to carry out an inert gas such as nitrogen, helium, and argon in a low oxygen concentration environment. The oxygen concentration is preferably 50 vol ppm or less, and more preferably 20 vol ppm or less.
(金屬層形成製程) 本發明的積層體的製造方法包括於加熱後的圖案(樹脂層)上形成金屬層之金屬層形成製程。作為金屬層,並無特別限定,能夠使用已知金屬種類。例如,可列舉銅、鋁、鎳、釩、鈦、鉻、鈷、金及鎢,銅及鋁為較佳,銅為更佳。金屬層的形成方法並無特別限定,能夠應有已知方法。例如,能夠使用日本特開2007-157879號公報、日本特表2001-521288號公報、日本特開2004-214501號公報、日本特開2004-101850號公報中所記載之方法。例如,可考慮光微影、剝離、電鍍、無電解電鍍、蝕刻、印刷及將它們組合而成之方法等。更具體而言,可列舉將濺射、光微影及蝕刻組合而成之圖案化方法、將光微影於電解電鍍組合而成之圖案化方法。 作為金屬層的厚度,最厚的部分為0.1~50μm為較佳,1~10μm為更佳。(Metal Layer Forming Process) The method for manufacturing a laminated body of the present invention includes a metal layer forming process of forming a metal layer on a pattern (resin layer) after heating. The metal layer is not particularly limited, and a known metal type can be used. Examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, and tungsten. Copper and aluminum are preferred, and copper is more preferred. The method for forming the metal layer is not particularly limited, and a known method can be used. For example, the methods described in Japanese Patent Application Laid-Open No. 2007-157879, Japanese Patent Application No. 2001-521288, Japanese Patent Application Laid-Open No. 2004-214501, and Japanese Patent Application Laid-Open No. 2004-101850 can be used. For example, photolithography, peeling, electroplating, electroless plating, etching, printing, and a method of combining them can be considered. More specifically, a patterning method in which sputtering, photolithography, and etching are combined, and a patterning method in which photolithography is combined with electrolytic plating are exemplified. As the thickness of the metal layer, the thickest part is preferably 0.1 to 50 μm, and more preferably 1 to 10 μm.
(表面活性化處理製程) 本發明的積層體的製造方法可以包括對上述金屬層及感光性樹脂組成物層中的至少一部分進行表面活性化處理之表面活性化處理製程。表面活性化處理可以僅對金屬層的至少一部分進行。亦可以對加熱製程後的感光性樹脂組成物層的至少一部分進行,亦可以分別對金屬層及加熱製程後的感光性樹脂組成物層的兩者的至少一部分進行。 表面活性化處理製程通常於金屬層形成製程後進場,但亦可以於上述加熱製程後,對感光性樹脂組成物層進行表面活性化處理製程之後形成金屬層。 表面活性化處理對金屬層的至少一部分進行為較佳,對金屬層中的於表面形成感光性樹脂組成物層之區域的一部分全部進行表面活性化處理為較佳。如此,藉由對金屬層的表面進行表面活性化處理,能夠提高與設置於其表面之感光性樹脂組成物層的黏合性。 又,表面活性化處理可以對加熱製程後的感光性樹脂組成物層的一部分或全部進行為較佳。如此,藉由對感光性樹脂組成物層的表面進行表面活性化處理,能夠提高與設置於已進行表面活性化處理之表面之金屬層或感光性樹脂組成物層的黏合性。 作為表面活性化處理,選自各種原料氣體(氧、氫、氬、氮、氮/氫混合氣體、氬/氧混合氣體等)的電漿處理、電暈放電處理、基於CF4 /O2 、NF3 /O2 、SF6 、NF3 、NF3 /O2 的蝕刻處理、基於紫外線(UV)臭氧法的表面處理、浸漬於鹽酸水溶液而去除氧化覆膜之後對包含具有胺基與硫醇基中的至少一種之化合物之有機表面處理劑進行的浸漬處理、使用了刷子之機械粗糙化處理,電漿處理為較佳,尤其對原料氣體使用了氧之氧電漿處理為較佳。進行電暈放電處理時,能量是500~200000J/m2 為較佳,1000~100000J/m2 為更佳,10000~50000J/m2 為最佳。(Surface activation treatment process) The manufacturing method of the laminated body of this invention may include the surface activation treatment process which surface-activated the at least one part of the said metal layer and the photosensitive resin composition layer. The surface activation treatment may be performed only on at least a part of the metal layer. It may be performed on at least a part of the photosensitive resin composition layer after the heating process, or may be performed on at least a part of both the metal layer and the photosensitive resin composition layer after the heating process. The surface activation treatment process usually proceeds after the metal layer formation process, but the metal resin layer may also be formed after the surface activation treatment process is performed on the photosensitive resin composition layer after the heating process. The surface activation treatment is preferably performed on at least a part of the metal layer, and it is preferable to perform surface activation treatment on a part of a region of the metal layer where a photosensitive resin composition layer is formed on the surface. As described above, by subjecting the surface of the metal layer to surface activation treatment, it is possible to improve the adhesion to the photosensitive resin composition layer provided on the surface. The surface activation treatment may be performed on part or all of the photosensitive resin composition layer after the heating process. In this way, by subjecting the surface of the photosensitive resin composition layer to surface activation treatment, it is possible to improve the adhesion to the metal layer or the photosensitive resin composition layer provided on the surface subjected to the surface activation treatment. The surface activation treatment is selected from plasma treatment, corona discharge treatment of various raw material gases (oxygen, hydrogen, argon, nitrogen, nitrogen / hydrogen mixed gas, argon / oxygen mixed gas, etc.), based on CF 4 / O 2 , Etching treatment of NF 3 / O 2 , SF 6 , NF 3 , NF 3 / O 2 , surface treatment based on ultraviolet (UV) ozone method, immersion in an aqueous hydrochloric acid solution to remove the oxide film, and the inclusion of amine groups and thiols It is preferred that the organic surface treatment agent of at least one of the compounds be impregnated with an organic surface treatment agent, mechanical roughening treatment using a brush, and plasma treatment, especially oxygen plasma treatment using oxygen as a raw material gas. When performing the corona discharge treatment, the energy is preferably 500 to 200,000 J / m 2 , more preferably 1,000 to 100,000 J / m 2 , and most preferably 10,000 to 50,000 J / m 2 .
(保存製程) 本發明的積層體的製造方法中,感光性樹脂組成物層形成製程與曝光製程之間、曝光製程與顯影製程之間、顯影製程與加熱製程之間及加熱製程與金屬層形成製程之間中的任一個中,進行表面溫度達到一定溫度之後於該狀態下保存5分鐘以上之保存製程。可以於所有有的各製程之間進行上述保存製程,亦可以僅於各製程之間中的任一個中進行,亦可以進行上述保存製程。本發明中,感光性樹脂組成物層形成製程與曝光製程之間、曝光製程與顯影製程之間及顯影製程與加熱製程之間中的至少一個中進行上述保存製程為較佳,於曝光製程與顯影製程之間進行保存製程更佳。藉由於曝光製程與顯影製程之間進行保存製程,能夠進一步提高感光性樹脂組成物層的黏合性。(Preservation process) In the method for producing a laminated body of the present invention, the photosensitive resin composition layer formation process and the exposure process, the exposure process and the development process, the development process and the heating process, and the heating process and the metal layer formation In any of the processes, a storage process is performed in which the surface temperature reaches a certain temperature and the state is stored in the state for more than 5 minutes. The above-mentioned preservation process may be performed between all the existing processes, or only in any one of the processes, or the above-mentioned preservation process may be performed. In the present invention, it is preferable that the storage process is performed in at least one of the photosensitive resin composition layer forming process and the exposure process, between the exposure process and the development process, and between the development process and the heating process. The preservation process between development processes is better. The storage process between the exposure process and the development process can further improve the adhesiveness of the photosensitive resin composition layer.
本發明中,保存製程是指,表面溫度達到一定溫度之後於該狀態下保存5分鐘以上之製程。在此,表面溫度是指藉由感光性樹脂組成物層或感光性樹脂組成物層而形成之圖案(樹脂層)等的被處理物的表面溫度。In the present invention, the storage process refers to a process in which the surface temperature is kept in this state for more than 5 minutes after the surface temperature reaches a certain temperature. Here, the surface temperature refers to a surface temperature of a to-be-processed object such as a pattern (resin layer) formed by a photosensitive resin composition layer or a photosensitive resin composition layer.
於本發明中,保存製程中的一定溫度不是指某一特定溫度,而可以具有規定的溫度範圍。保存製程中的被處理物的表面溫度的變動幅度(表面溫度的最大值與最小值之差)是15℃以下為較佳,10℃以下為更佳,5℃以下為進一步較佳。若表面溫度的變動幅度為上述範圍,則可使膜的性狀變穩定,且可輕鬆地製造黏合性優異之積層體。In the present invention, a certain temperature in the storage process does not refer to a specific temperature, but may have a predetermined temperature range. The fluctuation range of the surface temperature (the difference between the maximum value and the minimum value of the surface temperature) of the object to be processed during the storage process is preferably 15 ° C or lower, more preferably 10 ° C or lower, and 5 ° C or lower. When the fluctuation range of the surface temperature is within the above range, the properties of the film can be stabilized, and a laminated body having excellent adhesiveness can be easily produced.
本發明中,保存製程中的被處理物的平均表面溫度是-30℃以上為較佳,4℃以上為更佳,10℃以上為進一步較佳,20℃以上為特佳。上限是100℃以下為較佳,60℃以下為更佳,45℃以下為進一步較佳,30℃以下為特佳。此外,被處理物的平均表面溫度是指,每小時的被處理物的表面溫度的平均。又,保存製程進行5分鐘以上。In the present invention, the average surface temperature of the object to be processed in the storage process is preferably -30 ° C or higher, more preferably 4 ° C or higher, even more preferably 10 ° C or higher, and particularly preferably 20 ° C or higher. The upper limit is preferably below 100 ° C, more preferably below 60 ° C, even more preferably below 45 ° C, and particularly preferably below 30 ° C. In addition, the average surface temperature of a to-be-processed object means the average of the surface temperature of a to-be-processed object per hour. The storage process is performed for more than 5 minutes.
當於曝光製程與顯影製程之間進行保存製程(以下,還將保存製程稱為PED(Post Exposure Delay:曝光後延遲)製程)時,PED製程於滿足下述式之條件下進行較佳。 5≤t1<(10-0.036×T1+12.3 )×60 T1為PED製程中的平均表面溫度且單位為K,t1為PED製程的時間且單位為分鐘。When a preservation process is performed between the exposure process and the development process (hereinafter, the preservation process is also referred to as a PED (Post Exposure Delay) process), the PED process is preferably performed under the condition that the following formula is satisfied. 5≤t1 <(10 -0.036 × T1 + 12.3 ) × 60 T1 is the average surface temperature in the PED process and the unit is K, and t1 is the time of the PED process and the unit is minute.
又,PED製程中的被處理物的平均表面溫度是-30~60℃為較佳,4~45℃為更佳,20~30℃為進一步較佳。又,PED製程進行5~720分鐘為較佳,進行5~480分鐘為更佳,進行5~360分鐘為進一步較佳。PED製程中的被處理物的表面溫度的變動幅度是15℃以下為較佳,10℃以下為更佳,5℃以下為進一步較佳。The average surface temperature of the object to be treated in the PED process is preferably -30 to 60 ° C, more preferably 4 to 45 ° C, and even more preferably 20 to 30 ° C. The PED process is preferably performed for 5 to 720 minutes, more preferably performed for 5 to 480 minutes, and further preferably performed for 5 to 360 minutes. In the PED process, the fluctuation range of the surface temperature of the object to be treated is preferably 15 ° C or lower, more preferably 10 ° C or lower, and further preferably 5 ° C or lower.
當於感光性樹脂組成物層形成製程與曝光製程之間進行保存製程(以下,還將保存製程稱為PCD(Post Coating Delay:塗敷後延遲)製程)時,PCD製程於滿足下述式之條件下進行為較佳。 5≤t2<(10-0.031×T2+10.7 )×60 T2為PCD製程中的平均表面溫度且單位為K,t2為PCD製程的時間且單位為分鐘。When a storage process is performed between the photosensitive resin composition layer formation process and the exposure process (hereinafter, the storage process is also referred to as a PCD (Post Coating Delay) process), the PCD process is to satisfy the following formula: It is better to perform under the conditions. 5≤t2 <(10 -0.031 × T2 + 10.7 ) × 60 T2 is the average surface temperature in the PCD process and the unit is K, and t2 is the time of the PCD process and the unit is minute.
又,PCD製程中的被處理物的平均表面溫度是-30~60℃為較佳,4~45℃為更佳,20~30℃為進一步較佳。又,PCD製程僅5~360分鐘為較佳,進行5~120分鐘為更佳,進行5~60分鐘為進一步較佳。PCD製程中的被處理物的表面溫度的變動幅度是15℃以下為較佳,10℃以下為更佳,5℃以下為進一步較佳。The average surface temperature of the object to be treated in the PCD process is preferably -30 to 60 ° C, more preferably 4 to 45 ° C, and even more preferably 20 to 30 ° C. In addition, the PCD process is preferably only 5 to 360 minutes, more preferably 5 to 120 minutes, and still more preferably 5 to 60 minutes. In the PCD process, the fluctuation range of the surface temperature of the object to be treated is preferably 15 ° C or lower, more preferably 10 ° C or lower, and further preferably 5 ° C or lower.
於顯影製程與加熱製程之間進行保存製程(以下,還將該保存製程稱為PDD(Post Developing Delay:顯影後延遲)製程)時,PDD製程於滿足下述式之條件下進行為較佳。 5≤t3<(10-0.02×T3+8.0 )×60 T3為PDD製程中的平均表面溫度且單位為K,t3為PDD製程的時間且單位為分鐘。When a preservation process is performed between the development process and the heating process (hereinafter, the preservation process is also referred to as a PDD (Post Developing Delay) process), it is preferable that the PDD process is performed under the condition that the following formula is satisfied. 5≤t3 <(10 -0.02 × T3 + 8.0 ) × 60 T3 is the average surface temperature in the PDD process and the unit is K, and t3 is the time of the PDD process and the unit is minute.
又,PDD製程中的被處理物的平均表面溫度是4~80℃為較佳,10~60℃為更佳,20~30℃為進一步較佳。又,PDD製程進行5~1200分鐘為較佳,進行5~720分鐘為更佳,進行5~600分鐘為進一步較佳,進行5~300分鐘為特佳。PDD製程中的被處理物的表面溫度的變動幅度是30℃以下為較佳,20℃以下為更佳,10℃以下為進一步較佳。The average surface temperature of the object to be treated in the PDD process is preferably 4 to 80 ° C, more preferably 10 to 60 ° C, and even more preferably 20 to 30 ° C. The PDD process is preferably performed for 5 to 1200 minutes, more preferably performed for 5 to 720 minutes, more preferably performed for 5 to 600 minutes, and particularly preferably performed for 5 to 300 minutes. In the PDD process, the fluctuation range of the surface temperature of the object to be treated is preferably 30 ° C or lower, more preferably 20 ° C or lower, and further preferably 10 ° C or lower.
當於加熱製程與金屬層形成製程之間進行保存製程(以下,還將保存製程稱為PBD(Post Bake Delay:後烘烤延遲)製程)時,PBD製程中的被處理物的平均表面溫度是4~100℃為較佳,10~80℃為更佳,20~60℃為進一步較佳。又,PBD製程進行5~2400分鐘為較佳,進行5~1200分鐘為更佳,進行5~900分鐘為進一步較佳,進行5~600分鐘為特佳。PBD製程中的被處理物的表面溫度的變動幅度是60℃以下為較佳,45℃以下為更佳,30℃以下為進一步較佳。When a preservation process is performed between the heating process and the metal layer formation process (hereinafter, the preservation process is also referred to as a PBD (Post Bake Delay) process), the average surface temperature of the object in the PBD process is 4 to 100 ° C is preferable, 10 to 80 ° C is more preferable, and 20 to 60 ° C is more preferable. The PBD process is preferably performed for 5 to 2400 minutes, more preferably performed for 5 to 1200 minutes, more preferably performed for 5 to 900 minutes, and particularly preferably performed for 5 to 600 minutes. In the PBD process, the fluctuation range of the surface temperature of the object to be treated is preferably 60 ° C or lower, more preferably 45 ° C or lower, and further preferably 30 ° C or lower.
本發明的積層體的製造方法將如下一系列的循環進行2循環以上亦為較佳,亦即進而於金屬層形成製程後的圖案(樹脂層)上,依序進行感光性樹脂組成物層形成製程、曝光製程、顯影製程、加熱製程及金屬層形成製程,且於感光性樹脂組成物層形成製程與曝光製程之間、曝光製程與顯影製程之間、顯影製程與加熱製程之間及加熱製程與金屬層形成製程之間中的至少任一個中進行保存製程。前述循環進行2~7次為較佳,進行2~5次為更佳。藉此,能夠製造將由感光性樹脂組成物層形成之樹脂層與金屬層交替積層複數層而成之複數層配線結構的積層體。 又,隨著積層數的增加,容易於金屬層與樹脂層的界面、樹脂層彼此的界面、樹脂層與支撐體的界面中產生剝離,但依本發明的積層體的製造方法,即使增加積層數亦不會於各層之間產生剝離。因此,可更加顯著地得到本發明的效果。The method for manufacturing a laminated body of the present invention is preferably performed in the following series of cycles of 2 or more cycles, that is, sequentially forming a photosensitive resin composition layer on the pattern (resin layer) after the metal layer forming process. Process, exposure process, development process, heating process, and metal layer formation process, and between the photosensitive resin composition layer formation process and the exposure process, between the exposure process and the development process, between the development process and the heating process, and the heating process The storage process is performed in at least one of the metal layer formation process. The cycle is preferably performed 2 to 7 times, and more preferably 2 to 5 times. This makes it possible to produce a multilayer body having a multilayer wiring structure in which a resin layer formed of a photosensitive resin composition layer and a metal layer are alternately laminated. In addition, with the increase of the number of layers, peeling is likely to occur at the interface between the metal layer and the resin layer, the interface between the resin layers, and the interface between the resin layer and the support. It does not cause peeling between layers. Therefore, the effect of the present invention can be obtained more significantly.
圖1為表示複數層配線結構的積層體的一例之圖。圖中的符號500表示積層體,符號201~204表示樹脂層,符號301~303表示金屬層。 樹脂層201中形成有所希望的圖案。例如,該圖案例如能夠藉由負型顯影而形成。於樹脂層201的表面形成有金屬層301。該金屬層301以覆蓋形成在樹脂層201之槽401的表面的一部分的方式形成。 於金屬層301上形成有樹脂層202。樹脂層202中形成有所希望的圖案且金屬層301的一部分露出於樹脂層202。於樹脂層202的表面形成有金屬層302。該金屬層302以覆蓋形成在樹脂層202之槽402的表面的一部分的方式形成,且與露出於樹脂層202之金屬層301電連接。 於金屬層302上形成有樹脂層203。樹脂層203中形成有所希望的圖案,且金屬層302的一部分露出於樹脂層203。於樹脂層203的表面形成有金屬層303。該金屬層303以覆蓋形成在樹脂層203之槽403的表面的一部分的方式形成,且與露出於樹脂層203之金屬層302電連接。 於金屬層303上形成有樹脂層204。樹脂層204中形成有所希望的圖案,且金屬層303的一部分露出於樹脂層204。又,於圖1中金屬層302的一部分亦露出於樹脂層204。 該積層體作為樹脂層201~204的絕緣膜而發揮作用,且金屬層301~303作為配線層而發揮功能。該種積層體能夠較佳地用作電子元件中的再配線層。FIG. 1 is a diagram showing an example of a multilayer body having a multilayer wiring structure. In the figure, reference numeral 500 indicates a laminated body, reference numerals 201 to 204 indicate resin layers, and reference numerals 301 to 303 indicate metal layers. A desired pattern is formed in the resin layer 201. This pattern can be formed, for example, by negative-type development. A metal layer 301 is formed on the surface of the resin layer 201. The metal layer 301 is formed so as to cover a part of the surface of the groove 401 formed in the resin layer 201. A resin layer 202 is formed on the metal layer 301. A desired pattern is formed in the resin layer 202 and a part of the metal layer 301 is exposed on the resin layer 202. A metal layer 302 is formed on the surface of the resin layer 202. The metal layer 302 is formed so as to cover a part of the surface of the groove 402 formed in the resin layer 202, and is electrically connected to the metal layer 301 exposed to the resin layer 202. A resin layer 203 is formed on the metal layer 302. A desired pattern is formed in the resin layer 203, and a part of the metal layer 302 is exposed on the resin layer 203. A metal layer 303 is formed on the surface of the resin layer 203. The metal layer 303 is formed so as to cover a part of the surface of the groove 403 formed in the resin layer 203, and is electrically connected to the metal layer 302 exposed to the resin layer 203. A resin layer 204 is formed on the metal layer 303. A desired pattern is formed in the resin layer 204, and a part of the metal layer 303 is exposed on the resin layer 204. A part of the metal layer 302 is also exposed in the resin layer 204 in FIG. 1. The laminated body functions as an insulating film of the resin layers 201 to 204, and the metal layers 301 to 303 function as wiring layers. This laminated body can be preferably used as a redistribution layer in an electronic component.
<感光性樹脂組成物(樹脂組成物)> 接著,對本發明的積層體的製造方法中所使用之感光性樹脂組成物(以下,還稱為樹脂組成物)進行說明。<Photosensitive resin composition (resin composition)> Next, the photosensitive resin composition (henceforth a resin composition) used for the manufacturing method of the laminated body of this invention is demonstrated.
<<樹脂>> 本發明中的樹脂組成物包含選自聚醯亞胺前驅物、聚醯亞胺、聚苯并噁唑前驅物及聚苯并噁唑中之樹脂。作為樹脂而使用了聚醯亞胺前驅物或聚苯并噁唑前驅物時,具有不易使膜性狀穩定之傾向。因此,作為樹脂而使用了聚醯亞胺前驅物或聚苯并噁唑前驅物時,可尤其顯著地得到本發明的效果。其中,作為樹脂使用了聚醯亞胺前驅物(較佳為,具有自由基聚合性基之聚醯亞胺前驅物)時,可尤其顯著地得到本發明的效果。<< Resin> The resin composition in the present invention contains a resin selected from the group consisting of a polyimide precursor, a polyimide, a polybenzoxazole precursor, and a polybenzoxazole. When a polyfluorene imide precursor or a polybenzoxazole precursor is used as the resin, it tends to be difficult to stabilize film properties. Therefore, when a polyfluorene imide precursor or a polybenzoxazole precursor is used as the resin, the effect of the present invention is particularly remarkable. Among them, when a polyfluorene imide precursor (preferably, a polyfluorene imide having a radical polymerizable group) is used as the resin, the effect of the present invention is particularly remarkable.
樹脂組成物中的樹脂的含量相對於樹脂組成物的總固體成分是20~99質量%為較佳,50~99質量%為更佳,60~99質量%為進一步較佳,70~99質量%為特佳。 又,樹脂組成物中的樹脂的含量相對於樹脂組成物的總固體成分是20~99質量%為較佳,50~99質量%為更佳,60~99質量%為進一步較佳,70~99質量%為特佳。 又,樹脂組成物中所含有之樹脂的總質量中的聚醯亞胺前驅物的含量是80~100質量%為較佳,90~100質量%為更佳。樹脂組成物中所含有之樹脂實質上僅由聚醯亞胺構成為較佳。樹脂組成物中所含有的樹脂實質上僅由聚醯亞胺構成之情況是指,例如樹脂中所含有的除聚醯亞胺前驅物以外的樹脂的含量是聚醯亞胺前驅物的含量的3質量%以下為較佳。The content of the resin in the resin composition is preferably 20 to 99% by mass, more preferably 50 to 99% by mass, more preferably 60 to 99% by mass, and 70 to 99% by mass relative to the total solid content of the resin composition. % Is particularly good. The content of the resin in the resin composition is preferably 20 to 99% by mass, more preferably 50 to 99% by mass, still more preferably 60 to 99% by mass, and 70 to 99% by mass of the total solid content of the resin composition. 99% by mass is particularly good. The content of the polyimide precursor in the total mass of the resin contained in the resin composition is preferably 80 to 100% by mass, and more preferably 90 to 100% by mass. It is preferable that the resin contained in the resin composition consists essentially of polyimide. The case where the resin contained in the resin composition consists essentially of polyimide means, for example, that the content of the resin other than the polyimide precursor contained in the resin is the content of the polyimide precursor It is preferably 3% by mass or less.
(聚醯亞胺前驅物) 作為聚醯亞胺前驅物,包含由式(1)表示之重複單元之聚醯亞胺前驅物為較佳。 式(1) [化學式2]式(1)中,A21 及A22 分別獨立地表示氧原子或-NH-,R21 表示2價有機基,R22 表示4價有機基,R23 及R24 分別獨立地表示氫原子或1價有機基。(Polyimide precursor) As the polyimide precursor, a polyimide precursor containing a repeating unit represented by formula (1) is preferable. Formula (1) [Chemical Formula 2] In formula (1), A 21 and A 22 each independently represent an oxygen atom or -NH-, R 21 represents a divalent organic group, R 22 represents a tetravalent organic group, and R 23 and R 24 each independently represent a hydrogen atom or Monovalent organic group.
A21 及A22 分別獨立地表示氧原子或-NH-,氧原子為較佳。A 21 and A 22 each independently represent an oxygen atom or -NH-, and an oxygen atom is preferred.
R21 表示2價有機基。作為2價有機基,例示包含直鏈或分支脂肪族基、環狀脂肪族基及芳基之基團,碳數2~20的直鏈或分支脂肪族基、碳數6~20的環狀脂肪族基、碳數6~20的芳基或包括它們的組合之基團為較佳,包括碳數6~20的芳基之基團為更佳。作為芳基的例,可列舉下述。R 21 represents a divalent organic group. Examples of the divalent organic group include a linear or branched aliphatic group, a cyclic aliphatic group, and an aryl group, a linear or branched aliphatic group having 2 to 20 carbon atoms, and a cyclic group having 6 to 20 carbon atoms. An aliphatic group, an aryl group having 6 to 20 carbons, or a group including a combination thereof is preferable, and a group including an aryl group having 6 to 20 carbons is more preferable. Examples of the aryl group include the following.
[化學式3]式中,A是單鍵或選自可以被氟原子取代之碳數1~10的烴基、-O-、-C(=O)-、-S-、-S(=O)2 -及-NHCO-、以及它們的組合中之基團為較佳,單鍵或選自可以被氟原子取代之碳數1~3的伸烷基、-O-、-C(=O)-、-S-、-SO2 -中之基團為更佳,選自-CH2 -、-O-、-S-、-SO2 -、-C(CF3 )2 -、-C(CH3 )2 -中之2價基為進一步較佳。[Chemical Formula 3] In the formula, A is a single bond or a hydrocarbon group having 1 to 10 carbon atoms, -O-, -C (= O)-, -S-, -S (= O) 2- , and-which may be substituted with a fluorine atom. NHCO- and a group thereof are preferred, and a single bond or a group selected from a C1-C3 alkylene group, -O-, -C (= O)-, -S which may be substituted by a fluorine atom The group in-, -SO 2 -is more preferably selected from -CH 2- , -O-, -S-, -SO 2- , -C (CF 3 ) 2- , -C (CH 3 ) 2 -A divalent radical of-is more preferable.
具體而言,R21 可列舉以下的二胺的去除胺基之後殘存之二胺殘基等。 選自1,2-二胺基乙烷、1,2-二胺基丙烷、1,3-二胺基丙烷、1,4-二胺基丁烷及1,6-二胺基己烷;1,2-二胺基環戊烷或1,3-二胺基環戊烷、1,2-二胺基環己烷、1,3-二胺基環己烷或1,4-二胺基環己烷、1,2-雙(胺基甲基)環己烷、1,3-雙(胺基甲基)環己烷或1,4-雙(胺基甲基)環己烷、雙-(4-胺基環己基)甲烷、雙-(3-胺基環己基)甲烷、4,4’-二胺基-3,3’-二甲基環己基甲烷及異佛爾酮二胺;間苯二胺及對苯二胺、二胺基甲苯、4,4’-二胺基聯苯及3,3’-二胺基聯苯、4,4’-二胺基二苯醚及3,3’-二胺基二苯醚、4,4’-二胺基二苯基甲烷及3,3’-二胺基二苯基甲烷、4,4’-二胺基二苯基碸及3,3’-二胺基二苯基碸、4,4’-二胺基二苯硫醚及3,3’-二胺基二苯硫醚、4,4’-二胺基二苯甲酮及3,3’-二胺基二苯甲酮、3,3’-二甲基-4,4’-二胺基聯苯、2,2’-二甲基-4,4’-二胺基聯苯、3,3’-二甲氧基-4,4’-二胺基聯苯、2,2-雙(4-胺基苯基)丙烷、2,2-雙(4-胺基苯基)六氟丙烷、2,2-雙(3-羥基-4-胺基苯基)丙烷、2,2-雙(3-羥基-4-胺基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基苯基)丙烷、2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、雙(3-胺基-4-羥基苯基)碸、雙(4-胺基-3-羥基苯基)碸、4,4’-二胺基對聯三苯、4,4’-雙(4-胺基苯氧基)聯苯、雙[4-(4-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)苯基]碸、雙[4-(2-胺基苯氧基)苯基]碸、1,4-雙(4-胺基苯氧基)苯、9,10-雙(4-胺基苯基)蒽、3,3’-二甲基-4,4’-二胺基二苯基碸、1,3-雙(4-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、1,3-雙(4-胺基苯基)苯、3,3’-二乙基-4,4’-二胺基二苯基甲烷、3,3’-二甲基-4,4’-二胺基二苯基甲烷、4,4’-二胺基八氟聯苯、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]六氟丙烷、9,9-雙(4-胺基苯基)-10-氫蒽、3,3’,4,4’-四胺基聯苯、3,3’,4,4’-四胺基二苯醚、1,4-二胺基蒽醌、1,5-二胺基蒽醌、3,3-二羥基-4,4’-二胺基聯苯、9,9’-雙(4-胺基苯基)茀、4,4’-二甲基-3,3’-二胺基二苯基碸、3,3’,5,5’-四甲基-4,4’-二胺基二苯基甲烷、2,4-二胺基枯烯及2,5-二胺基枯烯、2,5-二甲基-對苯二胺、乙醯胍胺、2,3,5,6-四甲基-對苯二胺、2,4,6-三甲基-間苯二胺、雙(3-胺基丙基)四甲基二矽氧烷、2,7-二胺基茀、2,5-二胺基吡啶、1,2-雙(4-胺基苯基)乙烷、二胺基苯甲醯苯胺、二胺基苯甲酸的酯、1,5-二胺基萘、二胺基三氟甲苯、1,3-雙(4-胺基苯基)六氟丙烷、1,4-雙(4-胺基苯基)八氟丁烷、1,5-雙(4-胺基苯基)十氟戊烷、1,7-雙(4-胺基苯基)十四氟庚烷、2,2-雙[4-(3-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(2-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(4-胺基苯氧基)-3,5-二甲基苯基]六氟丙烷、2,2-雙[4-(4-胺基苯氧基)-3,5-雙(三氟甲基)苯基]六氟丙烷、對雙(4-胺基-2-三氟甲基苯氧基)苯、4,4’-雙(4-胺基-2-三氟甲基苯氧基)聯苯、4,4’-雙(4-胺基-3-三氟甲基苯氧基)聯苯、4,4’-雙(4-胺基-2-三氟甲基苯氧基)二苯基碸、4,4’-雙(3-胺基-5-三氟甲基苯氧基)二苯基碸、2,2-雙[4-(4-胺基-3-三氟甲基苯氧基)苯基]六氟丙烷、3,3’,5,5’-四甲基-4,4’-二胺基聯苯、3,3’–二甲氧基-4,4’–二胺基聯苯、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯、2,2’,5,5’,6,6’-六氟聯甲苯胺及4,4’-二胺基四聯苯中之至少一種二胺。Specific examples of R 21 include diamine residues remaining after removal of the amine group of the following diamines. Selected from 1,2-diaminoethane, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane, and 1,6-diaminohexane; 1,2-diaminocyclopentane or 1,3-diaminocyclopentane, 1,2-diaminocyclohexane, 1,3-diaminocyclohexane or 1,4-diamine Cyclohexane, 1,2-bis (aminomethyl) cyclohexane, 1,3-bis (aminomethyl) cyclohexane or 1,4-bis (aminomethyl) cyclohexane, Bis- (4-aminocyclohexyl) methane, bis- (3-aminocyclohexyl) methane, 4,4'-diamino-3,3'-dimethylcyclohexylmethane and isophorone di Amine; m-phenylenediamine and p-phenylenediamine, diaminotoluene, 4,4'-diaminobiphenyl and 3,3'-diaminobiphenyl, 4,4'-diaminodiphenyl ether And 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane and 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl Hydrazone and 3,3'-diaminodiphenylphosphonium, 4,4'-diaminodiphenylsulfide and 3,3'-diaminodiphenylsulfide, 4,4'-diaminediphenyl Benzophenone and 3,3'-diaminobenzophenone, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4 ' -Diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 2,2-bis (4-aminophenyl) propane, 2,2-bis (4-aminophenyl) hexafluoropropane, 2,2-bis (3-hydroxy-4-aminophenyl) propane, 2,2- Bis (3-hydroxy-4-aminophenyl) hexafluoropropane, 2,2-bis (3-amino-4-hydroxyphenyl) propane, 2,2-bis (3-amino-4-hydroxy Phenyl) hexafluoropropane, bis (3-amino-4-hydroxyphenyl) fluorene, bis (4-amino-3-hydroxyphenyl) fluorene, 4,4'-diaminopara-terphenyl, 4 , 4'-bis (4-aminophenoxy) biphenyl, bis [4- (4-aminophenoxy) phenyl] fluorene, bis [4- (3-aminophenoxy) phenyl ] 碸, bis [4- (2-aminophenoxy) phenyl] fluorene, 1,4-bis (4-aminophenoxy) benzene, 9,10-bis (4-aminophenyl) Anthracene, 3,3'-dimethyl-4,4'-diaminodiphenylphosphonium, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-amino Phenoxy) benzene, 1,3-bis (4-aminophenyl) benzene, 3,3'-diethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl -4,4'-diaminodiphenylmethane, 4,4'-diaminooctafluorobiphenyl, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, 9,9-bis (4-amino ) -10-hydroanthracene, 3,3 ', 4,4'-tetraaminobiphenyl, 3,3', 4,4'-tetraaminodiphenyl ether, 1,4-diaminoanthraquinone , 1,5-diaminoanthraquinone, 3,3-dihydroxy-4,4'-diaminobiphenyl, 9,9'-bis (4-aminophenyl) fluorene, 4,4'- Dimethyl-3,3'-diaminodiphenylphosphonium, 3,3 ', 5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 2,4-diamine Cumene and 2,5-diaminocumene, 2,5-dimethyl-p-phenylenediamine, acetoguanamine, 2,3,5,6-tetramethyl-p-phenylenediamine, 2 , 4,6-trimethyl-m-phenylenediamine, bis (3-aminopropyl) tetramethyldisilaxane, 2,7-diaminofluorene, 2,5-diaminopyridine, 1 2,2-bis (4-aminophenyl) ethane, diaminobenzidine aniline, esters of diaminobenzoic acid, 1,5-diaminonaphthalene, diaminotrifluorotoluene, 1,3 -Bis (4-aminophenyl) hexafluoropropane, 1,4-bis (4-aminophenyl) octafluorobutane, 1,5-bis (4-aminophenyl) decafluoropentane, 1,7-bis (4-aminophenyl) tetradefluorofluoroheptane, 2,2-bis [4- (3-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis [4 -(2-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis [4- (4-aminophenoxy) -3,5-dimethylphenyl] Fluoropropane, 2,2-bis [4- (4-aminophenoxy) -3,5-bis (trifluoromethyl) phenyl] hexafluoropropane, p-bis (4-amino-2-tri Fluoromethylphenoxy) benzene, 4,4'-bis (4-amino-2-trifluoromethylphenoxy) biphenyl, 4,4'-bis (4-amino-3-trifluoro Methylphenoxy) biphenyl, 4,4'-bis (4-amino-2-trifluoromethylphenoxy) diphenylphosphonium, 4,4'-bis (3-amino-5- Trifluoromethylphenoxy) diphenylphosphonium, 2,2-bis [4- (4-amino-3-trifluoromethylphenoxy) phenyl] hexafluoropropane, 3,3 ', 5 , 5'-tetramethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 4,4'-diamino-2 At least one of 2,2'-bis (trifluoromethyl) biphenyl, 2,2 ', 5,5', 6,6'-hexafluorobenzidine and 4,4'-diamine tetraphenyl Diamine.
又,還可以作為R21 的例而列舉下述中所示之二胺(DA-1)~(DA-18)的去除胺基之後殘存之二胺殘基。In addition, as examples of R 21 , diamine residues remaining after removal of the amine group of the diamines (DA-1) to (DA-18) shown below can be mentioned.
[化學式4] [Chemical Formula 4]
[化學式5] [Chemical Formula 5]
又,作為R21 的例,亦可列舉於主鏈具有兩個以上的伸烷基二醇單元之二胺的去除胺基之後殘存之二胺殘基。較佳為於一分子中組合包含兩個以上的乙二醇鏈、丙二醇鏈中的任一個或兩者之二胺殘基,更佳為不包含芳香環之二胺殘基。作為例,可列舉JEFFAMINE(註冊商標)KH-511、ED-600、ED-900、ED-2003、EDR-148、EDR-176、D-200、D-400、D-2000、D-4000(以上為商品名,HUNTSMAN Corporation製)、1-(2-(2-(2-胺基丙氧基)乙氧基)丙氧基)丙烷-2-胺、1-(1-(1-(2-胺基丙氧基)丙烷-2-基)氧基)丙烷-2-胺等,但並不限定於此。以下示出JEFFAMINE(註冊商標)KH-511、ED-600、ED-900、ED-2003、EDR-148、EDR-176的結構。In addition, as an example of R 21 , a diamine residue remaining after removal of an amine group of a diamine having two or more alkylene glycol units in the main chain may be mentioned. It is preferable to combine a diamine residue containing one or more of two or more ethylene glycol chains and propylene glycol chains in one molecule, and more preferably a diamine residue containing no aromatic ring. Examples include JEFFAMINE (registered trademark) KH-511, ED-600, ED-900, ED-2003, EDR-148, EDR-176, D-200, D-400, D-2000, D-4000 ( The above are trade names, manufactured by HUNTSMAN Corporation), 1- (2- (2- (2-aminopropyloxy) ethoxy) propoxy) propane-2-amine, 1- (1- (1- ( 2-Aminopropoxy) propane-2-yl) oxy) propane-2-amine and the like are not limited thereto. The structures of JEFFAMINE (registered trademark) KH-511, ED-600, ED-900, ED-2003, EDR-148, and EDR-176 are shown below.
[化學式6] [Chemical Formula 6]
上述中,x、y、z為平均值。In the above, x, y, and z are average values.
式(1)中,R22 表示4價有機基,包含芳香環之4價基為較佳,由下述式(1-1)或式(1-2)表示之基團為更佳。In formula (1), R 22 represents a tetravalent organic group, a tetravalent group containing an aromatic ring is more preferred, and a group represented by the following formula (1-1) or formula (1-2) is more preferred.
式(1-1) [化學式7]式(1-1)中,R112 是單鍵或選自可以被氟原子取代之碳數1~10的烴基、-O-、-CO-、-S-、-SO2 -及-NHCO-、以及它們的組合中之基團為較佳,單鍵或選自可以被氟原子取代之碳數1~3的伸烷基、-O-、-CO-、-S-及-SO2 -中之2價基團為更佳,選自包括-CH2 -、-C(CF3 )2 -、-C(CH3 )2 -、-O-、-CO-、-S-及-SO2 -之組中之2價基團為進一步較佳。Formula (1-1) [Chemical Formula 7] In the formula (1-1), R 112 is a single bond or a hydrocarbon group having 1 to 10 carbon atoms, -O-, -CO-, -S-, -SO 2- , and -NHCO-, which may be substituted with a fluorine atom. And a group in a combination thereof is preferred, and a single bond or a group selected from the group consisting of an alkylene group having 1 to 3 carbon atoms, -O-, -CO-, -S-, and -SO 2 -which may be substituted by a fluorine atom. The divalent group is more preferably selected from the group consisting of -CH 2- , -C (CF 3 ) 2- , -C (CH 3 ) 2- , -O-, -CO-, -S-, and -SO The divalent group in the 2- group is further preferred.
式(1-2) [化學式8] Formula (1-2) [Chemical Formula 8]
關於R22 ,可列舉從四羧酸二酐去除酸酐基之後殘存之四羧酸殘基等。具體而言,可列舉從以下的四羧酸二酐去除酸酐基之後殘存之四羧酸殘基等。 選自均苯四甲酸二酐(PMDA)、3,3’,4,4’-聯苯四羧酸二酐、3,3’,4,4’-二苯硫醚四羧酸二酐、3,3’,4,4’-二苯基碸四羧酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、3,3’,4,4’-二苯基甲烷四羧酸二酐、2,2’,3,3’-二苯基甲烷四羧酸二酐、2,3,3’,4’-聯苯四羧酸二酐、2,3,3’,4’-二苯甲酮四羧酸二酐、4,4’-氧代二鄰苯二甲酸二酐、2,3,6,7-萘四羧酸二酐、1,4,5,7-萘四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐、1,3-二苯基六氟丙烷-3,3,4,4-四羧酸二酐、1,4,5,6-萘四羧酸二酐、2,2’,3,3’-二苯基四羧酸二酐、3,4,9,10-苝四羧酸二酐、1,2,4,5-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、1,8,9,10-菲四羧酸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐及1,2,3,4-苯四羧酸二酐以及它們的碳數1~6的烷基衍生物及碳數1~6的烷氧基衍生物中之至少一種四羧酸二酐。Examples of R 22 include tetracarboxylic acid residues remaining after the acid anhydride group is removed from the tetracarboxylic dianhydride. Specific examples thereof include tetracarboxylic acid residues remaining after removing acid anhydride groups from the following tetracarboxylic dianhydrides. Selected from pyromellitic dianhydride (PMDA), 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 3,3', 4,4'-diphenylsulfide tetracarboxylic dianhydride, 3,3 ', 4,4'-diphenylphosphonium tetracarboxylic dianhydride, 3,3', 4,4'-benzophenone tetracarboxylic dianhydride, 3,3 ', 4,4'- Diphenylmethanetetracarboxylic dianhydride, 2,2 ', 3,3'-diphenylmethanetetracarboxylic dianhydride, 2,3,3', 4'-biphenyltetracarboxylic dianhydride, 2, 3,3 ', 4'-benzophenone tetracarboxylic dianhydride, 4,4'-oxo diphthalic dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 1, 4,5,7-naphthalenetetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride , 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 1,3-diphenylhexafluoropropane-3,3,4,4-tetracarboxylic dianhydride, 1,4 , 5,6-naphthalenetetracarboxylic dianhydride, 2,2 ', 3,3'-diphenyltetracarboxylic dianhydride, 3,4,9,10-fluorenetetracarboxylic dianhydride, 1,2, 4,5-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 1,8,9,10-phenanthrenetetracarboxylic dianhydride, 1,1-bis (2,3 -Dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, 1,2,3,4-benzenetetracarboxylic dianhydride and their carbon number 1 to 6 alkyl derivatives and Alkoxy derivative having 1 to 6 of at least one tetracarboxylic dianhydride.
又,作為R22 的例,還可列舉從下述中所示之四羧酸二酐(DAA-1)~(DAA-5)中去除酸酐基之後殘存之四羧酸殘基。 [化學式9] Examples of R 22 include tetracarboxylic acid residues remaining after removing acid anhydride groups from the tetracarboxylic dianhydrides (DAA-1) to (DAA-5) shown below. [Chemical Formula 9]
從針對鹼顯影液的溶解度的觀點考慮,R22 具有OH基為較佳。更具體而言,作為R22 ,可列舉從上述(DAA-1)~(DAA-5)中去除酸酐基之後殘存之四羧酸殘基。From the viewpoint of the solubility with respect to the alkaline developer, it is preferable that R 22 has an OH group. More specifically, examples of R 22 include tetracarboxylic acid residues remaining after removing acid anhydride groups from the above (DAA-1) to (DAA-5).
式(1)中,R23 及R24 分別獨立地表示氫原子或1價有機基。作為由R23 及R24 表示之1價有機基,可列舉包含直鏈或分支烷基、環狀烷基、芳香族基之基團、自由基聚合性基等。本發明中,R23 及R24 中的至少一個包含自由基聚合性基之基團為較佳。依該態樣,具有更顯著地得到本發明的效果之傾向。又,包含該聚醯亞胺前驅物之感光性樹脂組成物能夠較佳地用作負型感光性樹脂組成物。作為自由基聚合性基,可列舉具有乙烯性不飽和鍵之基團等。作為自由基聚合性基的具體例,可列舉乙烯基、(甲基)烯丙基、由下述式(III)表示之基團等。In formula (1), R 23 and R 24 each independently represent a hydrogen atom or a monovalent organic group. Examples of the monovalent organic group represented by R 23 and R 24 include a group including a linear or branched alkyl group, a cyclic alkyl group, an aromatic group, and a radical polymerizable group. In the present invention, at least one of R 23 and R 24 preferably contains a radical polymerizable group. According to this aspect, the effect of the present invention tends to be more significantly obtained. Moreover, the photosensitive resin composition containing this polyfluorene imide precursor can be used suitably as a negative photosensitive resin composition. Examples of the radical polymerizable group include a group having an ethylenically unsaturated bond. Specific examples of the radical polymerizable group include a vinyl group, a (meth) allyl group, and a group represented by the following formula (III).
[化學式10] [Chemical Formula 10]
式(III)中,R200 表示氫原子或甲基,甲基為更佳。 式(III)中,R201 表示碳數2~12的伸烷基、-CH2 CH(OH)CH2 -或碳數4~30的聚氧化伸烷基。作為較佳的R201 的例,可列舉伸乙基、伸丙基、三亞甲基、四亞甲基、1,2-丁二基、1,3-丁二基、五亞甲基、六亞甲基、八亞甲基、十二亞甲基、-CH2 CH(OH)CH2 -,伸乙基、伸丙基、三亞甲基、-CH2 CH(OH)CH2 -為更佳。R200 是甲基,R201 是伸乙基之組合為特佳。In the formula (III), R 200 represents a hydrogen atom or a methyl group, and a methyl group is more preferred. In formula (III), R 201 represents an alkylene group having 2 to 12 carbon atoms, -CH 2 CH (OH) CH 2- , or a polyoxyalkylene group having 4 to 30 carbon atoms. Preferred examples of R 201 include ethylidene, propylidene, trimethylene, tetramethylene, 1,2-butanediyl, 1,3-butanediyl, pentamethylene, and hexamethylene. methylene, octamethylene, dodecamethylene, -CH 2 CH (OH) CH 2 - , ethyl stretching, stretch propylene, trimethylene, -CH 2 CH (OH) CH 2 - is more good. It is particularly preferred that R 200 is a methyl group and R 201 is an ethyl group.
直鏈或分支烷基的碳數是1~30為較佳。作為具體例,可列舉甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基、十四烷基,十八烷基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基及2-乙基己基。 環狀烷基可以是單環環狀烷基,亦可以是多環環狀烷基。作為單環環狀烷基,例如可列舉環丙基、環丁基、環戊基、環己基、環庚基及環辛基。作為多環環狀的烷基,例如可列舉金剛烷基、降冰片基、冰片基、莰烯基(camphenyl)、十氫萘基、三環癸烷基、四環癸烷基、莰二醯基、二環己基及蒎烯基(pinenyl)。其中,從兼顧高靈敏度化的觀點考慮,環己基為較佳。 作為芳香族基,可列舉經取代或未經取代之苯環基、萘環基、戊搭烯環基、茚環基、薁環基、庚搭烯環基、茚烯環基、苝環基、稠五苯環基、苊烯環基、菲環基、蒽環基、稠四苯環基、䓛環基、三伸苯環基、茀環基、聯苯環基、吡咯環基、呋喃環基、噻吩環基、咪唑環基、噁唑環基、噻唑環基、吡啶環基、吡嗪環基、嘧啶環基、噠嗪環基、吲哚嗪環基、吲哚環基、苯并呋喃環基、苯并噻吩環基、異苯并呋喃環基、喹嗪環基、喹啉環基、酞嗪環基、萘啶環基、喹噁啉環基、喹噁唑啉環基、異喹啉環基、咔唑環基、啡啶環基、吖啶環基、啡啉環基、噻蒽環基、色烯環基、呫噸環基、啡噁噻環基、啡噻嗪環基或啡嗪環基。苯環基為較佳。The linear or branched alkyl group preferably has 1 to 30 carbon atoms. Specific examples include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl, octadecyl, Isopropyl, isobutyl, second butyl, third butyl, 1-ethylpentyl and 2-ethylhexyl. The cyclic alkyl group may be a monocyclic cyclic alkyl group or a polycyclic cyclic alkyl group. Examples of the monocyclic cyclic alkyl group include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and cyclooctyl. Examples of the polycyclic cyclic alkyl group include adamantyl, norbornyl, norbornyl, camphenyl, decahydronaphthyl, tricyclodecyl, tetracyclodecyl, and fluorene. Group, dicyclohexyl and pinenyl. Among them, cyclohexyl is preferred from the viewpoint of achieving high sensitivity. Examples of the aromatic group include a substituted or unsubstituted benzene ring group, a naphthalene ring group, a pentalene ring group, an indenyl ring group, a fluorene ring group, a heptene ring group, an indenene ring group, and a fluorene ring group. , Fused pentaphenyl ring group, pinene ring group, phenanthrene ring group, anthracene ring group, fused tetraphenyl ring group, fluorene ring group, triphenylene ring group, fluorene ring group, biphenyl ring group, pyrrole ring group, furan Cyclic group, thienyl group, imidazole group, oxazole group, thiazole group, pyridine group, pyrazine group, pyrimidine group, pyridazine group, indazine group, indole group, benzene Benzofuran ring, benzothiophene ring, isobenzofuran ring, quinazine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoxazoline ring , Isoquinoline ring, carbazole ring group, morphinyl ring group, acridine ring group, morpholine ring group, thienthyl ring group, chromene ring group, xanthene ring group, phenoxaline group, phenothialine group Azine ring group or phenazine ring group. A phenyl ring group is preferred.
式(1)中,當A22 是氧原子且R23 是氫原子時和/或A21 為氧原子且R24 為氫原子時,聚醯亞胺前驅物可以與具有乙烯性不飽和鍵之3級胺化合物形成共軛鹼。作為具有該種乙烯性不飽和鍵之3級胺化合物的例,可列舉N,N-二甲基胺基丙基甲基丙烯酸酯。In formula (1), when A 22 is an oxygen atom and R 23 is a hydrogen atom and / or A 21 is an oxygen atom and R 24 is a hydrogen atom, the polyfluorene imide precursor may be bonded to a polymer having an ethylenically unsaturated bond. Tertiary amine compounds form conjugate bases. Examples of the tertiary amine compound having such an ethylenically unsaturated bond include N, N-dimethylaminopropylmethacrylate.
又,當鹼顯影時,從提高解析度的方面考慮,聚醯亞胺前驅物於結構單元中具有氟原子為較佳。藉由氟原子,能夠於鹼顯影時對膜表面賦予拒水性,且抑制自表面的浸入等。聚醯亞胺前驅物中的氟原子含有量是10質量%以上為較佳,又,從對於鹼性水溶液的溶解性的方面考慮,20質量%以下為較佳。In addition, when the alkali is developed, it is preferable that the polyfluorene imide precursor has a fluorine atom in the structural unit from the viewpoint of improving the resolution. The fluorine atom can impart water repellency to the surface of the film at the time of alkali development, and can suppress infiltration from the surface. The fluorine atom content in the polyfluorene imide precursor is preferably 10% by mass or more, and from the viewpoint of solubility in an alkaline aqueous solution, 20% by mass or less is preferable.
又,以提高與基板的黏合性為目的,聚醯亞胺前驅物可以與具有矽氧烷結構之脂肪族基共聚合。具體而言,作為二胺成分,可列舉雙(3-胺基丙基)四甲基二矽氧烷、雙(對胺基苯基)八甲基五矽氧烷等。In addition, for the purpose of improving the adhesion to the substrate, the polyimide precursor can be copolymerized with an aliphatic group having a siloxane structure. Specifically, examples of the diamine component include bis (3-aminopropyl) tetramethyldisilazane, bis (p-aminophenyl) octamethylpentasiloxane, and the like.
又,為了提高樹脂組成物的保存穩定性,用單胺、酸酐、單羧酸、單醯氯化合物、單活性酯化合物等封端劑密封聚醯亞胺前驅物的主鏈末端為較佳。該些中,使用單胺為更佳。作為單胺的較佳的化合物,可列舉苯胺、2-乙炔基苯胺、3-乙炔基苯胺、4-乙炔基苯胺、5-胺基-8-羥基喹啉、1-羥基-7-胺基萘、1-羥基-6-胺基萘、1-羥基-5-胺基萘、1-羥基-4-胺基萘、2-羥基-7-胺基萘、2-羥基-6-胺基萘、2-羥基-5-胺基萘、1-羧基-7-胺基萘、1-羧基-6-胺基萘、1-羧基-5-胺基萘、2-羧基-7-胺基萘、2-羧基-6-胺基萘、2-羧基-5-胺基萘、2-胺基苯甲酸、3-胺基苯甲酸、4-胺基苯甲酸、4-胺基水楊酸、5-胺基水楊酸、6-胺基水楊酸、2-胺基苯磺酸、3-胺基苯磺酸、4-胺基苯磺酸、3-胺基-4,6-二羥基嘧啶、2-胺基苯酚、3-胺基苯酚、4-胺基苯酚、2-胺基苯硫酚、3-胺基苯硫酚、4-胺基苯硫酚等。可以將該些使用兩種以上,亦可以藉由使複數個封端劑反應而導入複數個不同的末端基。In order to improve the storage stability of the resin composition, it is preferable to seal the end of the main chain of the polyfluorene imide precursor with a blocking agent such as a monoamine, an acid anhydride, a monocarboxylic acid, a monofluorinated chloride compound, or a monoactive ester compound. Among these, it is more preferable to use a monoamine. Preferred compounds of the monoamine include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, and 1-hydroxy-7-amine group. Naphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-amine Naphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-amine Naphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid , 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6- Dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, and the like. Two or more of these may be used, or a plurality of different terminal groups may be introduced by reacting a plurality of end-capping agents.
聚醯亞胺前驅物可以由式(1)表示之重複單元和作為其他聚醯亞胺前驅物之其他重複單元構成。 當包含其他重複單元時,聚醯亞胺前驅物中的其他重複單元的比例是1~60莫耳%為較佳,5~50莫耳%為更佳。The polyfluorene imide precursor may be composed of a repeating unit represented by formula (1) and other repeating units as other polyfluorine imide precursors. When other repeating units are included, the proportion of other repeating units in the polyfluorene imide precursor is preferably 1 to 60 mole%, and more preferably 5 to 50 mole%.
本發明中的聚醯亞胺前驅物還能夠構成為實質上不含有除了包含由式(1)表示之重複單元之聚醯亞胺前驅物以外的其他聚醯亞胺前驅物。實質上不含有是指,例如樹脂組成物中所含有之上述其他聚醯亞胺前驅物的含量為聚醯亞胺前驅物的含量的3質量%以下。The polyimide precursor in the present invention can be configured so as not to substantially contain other polyimide precursors other than the polyimide precursor containing a repeating unit represented by formula (1). The term “substantially free” means that, for example, the content of the other polyimide precursor contained in the resin composition is 3% by mass or less of the content of the polyimide precursor.
聚醯亞胺前驅物的重量平均分子量(Mw)較佳為20000~28000,更佳為22000~27000,進一步較佳為23000~25000。聚醯亞胺前驅物的分散度(Mw/Mn)並無特別確定,1.0以上為較佳,2.5以上為更佳,2.8以上為進一步較佳。聚醯亞胺前驅物的分散度的上限值並無特別限定,例如4.5以下為較佳,且還能夠設為3.4以下。The weight average molecular weight (Mw) of the polyimide precursor is preferably 20,000 to 28,000, more preferably 22,000 to 27,000, and even more preferably 23,000 to 25,000. The dispersion degree (Mw / Mn) of the polyfluorene imide precursor is not particularly determined, but 1.0 or more is preferable, 2.5 or more is more preferable, and 2.8 or more is more preferable. The upper limit of the dispersion degree of the polyimide precursor is not particularly limited, and is preferably 4.5 or less, for example, and can be set to 3.4 or less.
(聚醯亞胺) 作為本發明中所使用之聚醯亞胺是具有醯亞胺環之高分子化合物即可,且並無特別限定,由下述式(4)表示之化合物為較佳,由下述式(4)表示之化合物,且具有自由基聚合性基之化合物為更佳。作為自由基聚合性基,可列舉以上述聚醯亞胺前驅物進行說明之聚合性基,較佳範圍亦相同。 式(4) [化學式11]式(4)中,R131 表示2價有機基,R132 表示4價有機基。(Polyimide) The polyimide used in the present invention may be a polymer compound having a fluorene imine ring, and is not particularly limited. A compound represented by the following formula (4) is preferred, The compound represented by the following formula (4) is more preferably a compound having a radical polymerizable group. Examples of the radical polymerizable group include a polymerizable group described using the polyfluorene imide precursor described above, and the preferable ranges are also the same. Formula (4) [Chemical Formula 11] In the formula (4), R 131 represents a divalent organic group, and R 132 represents a tetravalent organic group.
當聚醯亞胺具有自由基聚合性基時,可以於R131 及R132 中的至少一個中導入有自由基聚合性基,如下述式(4-1)或式(4-2)所示,可以於聚醯亞胺的末端導入有自由基聚合性基。 式(4-1) [化學式12]式中,R133 為自由基聚合性基,其他基團的定義與式(4)相同。 式(4-2) [化學式13]式中,R134 及R135 中的至少一個是自由基聚合性基,另一個是有機基,其他基團的定義與式(4)相同。When the polyfluorene imide has a radical polymerizable group, a radical polymerizable group may be introduced into at least one of R 131 and R 132 , as shown in the following formula (4-1) or formula (4-2) A radical polymerizable group may be introduced at the end of the polyfluoreneimide. Formula (4-1) [Chemical Formula 12] In the formula, R 133 is a radical polymerizable group, and the definition of other groups is the same as that of formula (4). Formula (4-2) [Chemical Formula 13] In the formula, at least one of R 134 and R 135 is a radical polymerizable group, and the other is an organic group. The definition of other groups is the same as that of formula (4).
作為由R131 表示之2價有機基,可例示與上述聚醯亞胺前驅物的式(1)中的R21 相同的基團,較佳範圍亦相同。作為由R132 表示之4價有機基,可例示與上述聚醯亞胺前驅物的式(1)中的R22 相同的基團,較佳範圍亦相同。Examples of the divalent organic group represented by R 131 include the same groups as those of R 21 in the formula (1) of the polyfluorene imide precursor described above, and preferred ranges are also the same. Examples of the tetravalent organic group represented by R 132 include the same groups as those of R 22 in the formula (1) of the polyfluorene imide precursor described above, and preferred ranges are also the same.
聚醯亞胺的醯亞胺化率是85%以上為較佳,90%以上為更佳。醯亞胺化率是85%以上,藉此伴隨因加熱而醯亞胺化時所引起之閉環的膜收縮變小,從而能夠抑制產生翹曲。The polyimide has an imidization rate of 85% or more, more preferably 90% or more. The fluorene imidization rate is 85% or more, thereby reducing the shrinkage of the membrane due to the ring closure caused by the fluorene imidization by heating, and thereby suppressing the occurrence of warpage.
聚醯亞胺不僅含有均為基於一種R131 或R132 之上述式(4)的重複結構單元,而且還可以含有包含兩個以上的種類不同的R131 或R132 之重複單元。又,除了上述的式(4)的重複單元以外,聚醯亞胺還可以包含其他種類的重複結構單元。Polyimide not only contains repeating structural units of the above formula (4) each based on one type of R 131 or R 132 , but also may contain repeating units including two or more different types of R 131 or R 132 . In addition to the repeating unit of the formula (4) described above, the polyfluoreneimide may contain other kinds of repeating structural units.
聚醯亞胺例如能夠利用如下方法來進行合成,該方法為利用於低溫中下使四羧酸二酐與二胺化合物(用作為單胺之封端劑取代一部分)反應之方法、於低溫下使四羧酸二酐(用作為酸酐或單醯氯(Monoacid chloride)化合物或單活性酯化合物之封端劑取代一部分)與二胺化合物反應之方法、藉由四羧酸二酐與醇而得到二酯,然後於縮合劑的存在下使其與二胺(用作為單胺之封端劑取代一部分)反應之方法、藉由四羧酸二酐與醇而得到二酯,然後將剩餘的二羧酸醯氯化而使其與二胺(用作為單胺之封端劑取代一部分)反應之方法等方法得到聚醯亞胺前驅物,並利用已知的醯亞胺化反應法將其完全醯亞胺化之方法或中途停止醯亞胺化反應而局部導入醯亞胺結構之方法、進而將完全醯亞胺化之聚合物和該聚醯亞胺前驅物進行混合,藉此局部導入醯亞胺結構之方法。 作為聚醯亞胺的市售品,可例示Durimide(註冊商標)284(Fujifilm Corporation製)、Matrimide5218(HUNTSMAN CORPORATION製)。Polyfluorene imine can be synthesized, for example, by a method in which a tetracarboxylic dianhydride is reacted with a diamine compound (a part of which is replaced by a blocking agent as a monoamine) at a low temperature, and at a low temperature. A method of reacting a tetracarboxylic dianhydride (replacement with a capping agent as an acid anhydride or a monoacid chloride compound or a monoactive ester compound) with a diamine compound, which is obtained by using a tetracarboxylic dianhydride and an alcohol A diester, which is then reacted with a diamine in the presence of a condensing agent to replace a part of it with a capping agent as a monoamine, to obtain a diester by using a tetracarboxylic dianhydride and an alcohol, and then The phosphonium carboxylic acid is chlorinated to react with a diamine (a part of which is replaced with a monoamine capping agent) and other methods to obtain a polyfluorene imine precursor, and complete it by a known fluorene imidization reaction method.方法 Imidation method or method of stopping 醯 imidization reaction and introducing 醯 imine structure locally, and then mixing the fully 醯 imidized polymer and the poly 醯 imine precursor to locally introduce 醯Of imine structure Law. Examples of commercially available products of polyimide include Durimide (registered trademark) 284 (manufactured by Fujifilm Corporation) and Matrimide 5218 (manufactured by HUNTSMAN CORPORATION).
聚醯亞胺的重量平均分子量(Mw)是5,000~70,000為較佳,8,000~50,000為更佳,10,000~30,000為特佳。藉由將重量平均分子量設為5,000以上,能夠提高硬化後的膜的耐彎折性。為了得到力學特性優異之硬化膜,重量平均分子量是20,000以上為更佳。又,當含有兩種以上的聚醯亞胺時,至少一種聚醯亞胺的重量平均分子量是上述範圍為較佳。The weight average molecular weight (Mw) of the polyimide is preferably 5,000 to 70,000, more preferably 8,000 to 50,000, and particularly preferably 10,000 to 30,000. By setting the weight average molecular weight to 5,000 or more, the bending resistance of the cured film can be improved. In order to obtain a cured film having excellent mechanical properties, a weight average molecular weight of 20,000 or more is more preferable. When two or more kinds of polyimide are contained, the weight average molecular weight of at least one kind of polyimide is preferably in the above range.
(聚苯并噁唑前驅物) 本發明中,作為聚苯并噁唑前驅物,對其結構等並無特別限定,較佳為包含由下述式(3)表示之重複單元之化合物。 式(3) [化學式14]式(3)中,R121 表示2價有機基,R122 表示4價有機基,R123 及R124 分別獨立地表示氫原子或1價有機基。(Polybenzoxazole precursor) In the present invention, as the polybenzoxazole precursor, the structure and the like are not particularly limited, and a compound containing a repeating unit represented by the following formula (3) is preferred. Formula (3) [Chemical Formula 14] In the formula (3), R 121 represents a divalent organic group, R 122 represents a tetravalent organic group, and R 123 and R 124 each independently represent a hydrogen atom or a monovalent organic group.
於式(3)中,R123 及R124 的定義分別與式(1)中的R23 相同,較佳範圍亦相同。In formula (3), the definitions of R 123 and R 124 are the same as those of R 23 in formula (1), and the preferred ranges are also the same.
於式(3)中,作為由R121 表示之2價有機基,包含脂肪族基及芳香族基中的至少一個基為較佳。作為脂肪族基,直鏈脂肪族基為較佳。R121 是二羧酸殘基為較佳。作為二羧酸,包含脂肪族基之二羧酸及包含芳香族基之二羧酸為較佳,包含芳香族基之二羧酸為更佳。 作為包含脂肪族基之二羧酸,包含直鏈或分支(較佳為直鏈)脂肪族基之二羧酸為較佳,由直鏈或分支(較佳為直鏈)的脂肪族基與兩個COOH構成之二羧酸為更佳。直鏈或分支(較佳為直鏈)脂肪族基的碳數是2~30為較佳,2~25為更佳,3~20為進一步較佳,4~15為特佳,5~10為進一步較佳。直鏈脂肪族基是伸烷基為較佳。作為包含直鏈脂肪族基之二羧酸的具體例,可列舉丙二酸、二甲基丙二酸、乙基丙二酸、異丙基丙二酸、二正丁基丙二酸、琥珀酸、四氟琥珀酸、甲基琥珀酸、2,2-二甲基琥珀酸、2,3-二甲基琥珀酸、二甲基甲基琥珀酸、戊二酸、六氟戊二酸、2-甲基戊二酸、3-甲基戊二酸、2,2-二甲基戊二酸、3,3-二甲基戊二酸、3-乙基-3-甲基戊二酸、己二酸、八氟己二酸、3-甲基己二酸、庚二酸、2,2,6,6-四甲基庚二酸、辛二酸、十二氟辛二酸、壬二酸、癸二酸、十六氟癸二酸、1,9-壬二酸、十二烷二酸、十三烷二酸、十四烷二酸、十五烷二酸、十六烷二酸、十七烷二酸、十八烷二酸、十九烷二酸、二十烷二酸、二十一烷二酸、二十二烷二酸、二十三烷二酸、二十四烷二酸、二十五烷二酸、二十六烷二酸、二十七烷二酸、二十八烷二酸、二十九烷二酸、三十烷二酸、三十一烷二酸、三十二烷二酸、二乙二醇酸,進而可列舉由下述式表示之二羧酸等。In the formula (3), it is preferable that the divalent organic group represented by R 121 includes at least one of an aliphatic group and an aromatic group. As the aliphatic group, a linear aliphatic group is preferred. R 121 is preferably a dicarboxylic acid residue. As the dicarboxylic acid, a dicarboxylic acid containing an aliphatic group and a dicarboxylic acid containing an aromatic group are more preferred, and a dicarboxylic acid containing an aromatic group is more preferred. As the dicarboxylic acid containing an aliphatic group, a dicarboxylic acid containing a linear or branched (preferably linear) aliphatic group is preferred, and a linear or branched (preferably linear) aliphatic group and Dicarboxylic acids composed of two COOH are more preferred. The linear or branched (preferably straight-chain) aliphatic group has a carbon number of 2 to 30, more preferably 2 to 25, more preferably 3 to 20, particularly preferably 4 to 15, and 5 to 10 Is even better. It is preferred that the linear aliphatic group is an alkylene group. Specific examples of the dicarboxylic acid containing a linear aliphatic group include malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n-butylmalonic acid, and amber. Acid, tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexafluoroglutaric acid, 2-methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid , Adipic acid, octafluoroadipate, 3-methyladipate, pimelic acid, 2,2,6,6-tetramethylpimelate, suberic acid, dodecafluorosuberic acid, nonyl Diacid, Sebacic acid, Hexafluorosebacic acid, 1,9-Azelaic acid, Dodecanedioic acid, Tridecanedioic acid, Tetradecanedioic acid, Pentadecanoic acid, Hexadecanedioic Acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosenedioic acid, behenedioic acid, behenedioedioic acid, behenedenedioic acid, twenty-four Glycanedioic acid, pentadecanedioic acid, hexacosane diacid, heptacosenedioic acid, octacosenedioic acid, icosane enedioic acid, sescanedioic acid, 31 Acid, tris dodecanedioic acid, glycol acid, and further include represented by the following formula of the dicarboxylic acid.
[化學式15](式中,Z表示碳數1~6的烴基,n表示1~6的整數。)[Chemical Formula 15] (In the formula, Z represents a hydrocarbon group having 1 to 6 carbon atoms, and n represents an integer of 1 to 6).
作為包含芳香族基之二羧酸,具有以下芳香族基之二羧酸為較佳,僅由以下芳香族基和兩個COOH構成之二羧酸為更佳。As the dicarboxylic acid containing an aromatic group, a dicarboxylic acid having the following aromatic group is preferable, and a dicarboxylic acid composed of only the following aromatic group and two COOH is more preferable.
[化學式16]式中,A表示選自包含-CH2 -、-O-、-S-、-SO2 -、-CO-、-NHCO-、-C(CF3 )2 -及-C(CH3 )2 -之組中之2價基。[Chemical Formula 16] In the formula, A represents a member selected from the group consisting of -CH 2- , -O-, -S-, -SO 2- , -CO-, -NHCO-, -C (CF 3 ) 2- , and -C (CH 3 ) 2 -2-valent base in the group.
作為包含芳香族基之二羧酸的具體例,4,4’-羰基二苯甲酸及4,4’-二羧基二苯基醚對苯二甲酸為較佳。As specific examples of the dicarboxylic acid containing an aromatic group, 4,4'-carbonyldibenzoic acid and 4,4'-dicarboxydiphenyl ether terephthalic acid are preferable.
於式(3)中,R122 表示4價有機基。作為4價有機基,可列舉以上述式(1)中的R22 進行說明之基團,較佳範圍亦相同。In formula (3), R 122 represents a tetravalent organic group. Examples of the tetravalent organic group include groups described with R 22 in the formula (1), and preferred ranges are also the same.
聚苯并噁唑前驅物的重量平均分子量(Mw)是18000~30000為較佳,20000~29000為更佳,22000~28000為進一步較佳。又,數平均分子量(Mn)是7200~14000為較佳,8000~12000為更佳,9200~11200為進一步較佳。聚苯并噁唑前驅物的分散度是1.4以上為較佳,1.5以上為更佳,1.6以上為進一步較佳。聚苯并噁唑前驅物的分散度的上限值並無特別限定,例如是2.6以下為較佳,2.5以下為更佳,2.4以下為進一步較佳,2.3以下為進一步較佳,2.2以下為更進一步較佳。The weight average molecular weight (Mw) of the polybenzoxazole precursor is preferably 18,000 to 30,000, more preferably 20,000 to 29,000, and even more preferably 22,000 to 28,000. The number average molecular weight (Mn) is preferably 7200 to 14000, more preferably 8000 to 12000, and still more preferably 9200 to 11200. The degree of dispersion of the polybenzoxazole precursor is preferably 1.4 or more, more preferably 1.5 or more, and more preferably 1.6 or more. The upper limit of the degree of dispersion of the polybenzoxazole precursor is not particularly limited. For example, it is preferably below 2.6, more preferably below 2.5, even more preferably below 2.4, even more preferably below 2.3, and below 2.2 Even better.
(聚苯并噁唑) 作為聚苯并噁唑,是具有苯并噁唑環之化合物即可,且並無特別限定,具有由下述式(X)表示之重複單元之化合物為較佳,是由下述式(X)表示之化合物,且具有自由基聚合性基之化合物為更佳。作為自由基聚合性基,可列舉以上述聚醯亞胺前驅物進行說明之自由基聚合性基,較佳範圍亦相同。 [化學式17]式(X)中,R133 表示2價有機基,R134 表示4價有機基。(Polybenzoxazole) The polybenzoxazole may be a compound having a benzoxazole ring, and is not particularly limited. A compound having a repeating unit represented by the following formula (X) is preferable. It is a compound represented by the following formula (X), and a compound having a radical polymerizable group is more preferable. Examples of the radically polymerizable group include radically polymerizable groups described with reference to the aforementioned polyfluorene imide precursor, and the preferred ranges are also the same. [Chemical Formula 17] In the formula (X), R 133 represents a divalent organic group, and R 134 represents a tetravalent organic group.
當聚苯并噁唑具有自由基聚合性基時,可以於R133 及R134 中的至少一個中導入有自由基聚合性基,如下述式(X-1)或式(X-2)所示,可以於聚苯并噁唑的末端導入有自由基聚合性基。 式(X-1) [化學式18]式(X-1)中,R135 及R136 中的至少一個是自由基聚合性基,另一個是有機基,且其他基團的定義與式(X)相同。 式(X-2) [化學式19]式(X-2)中,R137 是自由基聚合性基,其他為取代基,且其他基團的定義與式(X)相同。When the polybenzoxazole has a radical polymerizable group, a radical polymerizable group may be introduced into at least one of R 133 and R 134 as shown in the following formula (X-1) or formula (X-2) It is shown that a radical polymerizable group can be introduced into the terminal of the polybenzoxazole. Formula (X-1) [Chemical Formula 18] In the formula (X-1), at least one of R 135 and R 136 is a radical polymerizable group, and the other is an organic group, and the definition of the other groups is the same as that of the formula (X). Formula (X-2) [Chemical Formula 19] In the formula (X-2), R 137 is a radical polymerizable group, the others are substituents, and the definitions of other groups are the same as those of the formula (X).
作為由R133 表示之2價有機基,可列舉脂肪族或芳香族基。作為具體例,可列舉以聚苯并噁唑前驅物的式(3)的R121 進行說明之基團,較佳範圍亦相同。Examples of the divalent organic group represented by R 133 include an aliphatic group and an aromatic group. As a specific example, a group described with R 121 of the formula (3) of a polybenzoxazole precursor can be cited, and the preferred range is also the same.
作為由R134 表示之4價有機基,可列舉以聚苯并噁唑前驅物的式(3)中的R122 進行說明之基團,較佳範圍亦相同。Examples of the tetravalent organic group represented by R 134 include a group described with R 122 in Formula (3) of a polybenzoxazole precursor, and the preferred ranges are also the same.
聚苯并噁唑不僅可以含有均為基於一種R133 或R134 之由上述式(X)表示之重複結構單元,而且還可以含有包含兩個以上的種類不同的R133 或R134 之由上述式(X)表示之重複結構單元。又,除了上述式(X)的重複單元以外,聚苯并噁唑還可以包含其他種類的重複結構單元。The polybenzoxazole may not only contain repeating structural units represented by the above formula (X) based on one kind of R 133 or R 134 , but may also contain two or more kinds of R 133 or R 134 having different kinds. Repeating structural unit represented by formula (X). In addition to the repeating unit of the formula (X), the polybenzoxazole may contain other types of repeating structural units.
聚苯并噁唑例如藉由使二胺基苯酚衍生物與如下化合物反應而得到聚苯并噁唑前驅物,並利用已知的噁唑化反應法將其噁唑化來得到,該化合物選自包含R133 之二羧酸以及上述二羧酸的二羧酸二氯化物及二羧酸衍生物等。此外,為二羧酸時,為了提高反應產率,可以使用使1-羥基-1,2,3-苯并三唑等預先反應而成之活性酯型二羧酸衍生物。The polybenzoxazole is obtained, for example, by reacting a diaminophenol derivative with the following compound to obtain a polybenzoxazole precursor and oxazolating it using a known oxazolation reaction method. The compound is selected Self-containing dicarboxylic acids including R 133 and dicarboxylic acid dichlorides and dicarboxylic acid derivatives of the aforementioned dicarboxylic acids. In the case of a dicarboxylic acid, in order to increase the reaction yield, an active ester-type dicarboxylic acid derivative obtained by previously reacting 1-hydroxy-1,2,3-benzotriazole or the like may be used.
聚苯并噁唑的重量平均分子量(Mw)是5,000~70,000為較佳,8,000~50,000為更佳,10,000~30,000為特佳。藉由將重量平均分子量設為5,000以上,能夠提高硬化後的膜的耐彎折性。為了得到力學特性優異之硬化膜,重量平均分子量是20,000以上為更佳。又,當具有兩種以上的聚苯并噁唑時,至少一種聚苯并噁唑的重量平均分子量是上述範圍為較佳。The weight average molecular weight (Mw) of the polybenzoxazole is preferably 5,000 to 70,000, more preferably 8,000 to 50,000, and particularly preferably 10,000 to 30,000. By setting the weight average molecular weight to 5,000 or more, the bending resistance of the cured film can be improved. In order to obtain a cured film having excellent mechanical properties, a weight average molecular weight of 20,000 or more is more preferable. When there are two or more kinds of polybenzoxazole, the weight average molecular weight of at least one kind of polybenzoxazole is preferably in the above range.
<<自由基聚合性化合物>> 本發明中的樹脂組成物還可以含有自由基聚合性化合物。藉由含有自由基聚合性化合物,能夠較佳地使用負型感光性樹脂組成物。進而,能夠形成耐熱性更優異之硬化膜。作為自由基聚合性化合物,具有乙烯性不飽和鍵之化合物為較佳,包含兩個以上的具有乙烯性不飽和鍵之基團之化合物為更佳。自由基聚合性化合物例如可以是單體、預聚物、寡聚物及它們的混合物以及它們的多聚體等化學形態中的任一種。作為具有乙烯性不飽和鍵之基團,苯乙烯基、乙烯基、(甲基)丙烯醯基及(甲基)烯丙基為較佳,(甲基)丙烯醯基為更佳。此外,本發明中的自由基聚合性化合物為於上述樹脂不同之成分。亦即,具有自由基聚合性基之聚醯亞胺前驅物、具有自由基聚合性基之聚醯亞胺、具有自由基聚合性基之聚苯并噁唑前驅物及具有自由基聚合性基之聚苯并噁唑相當於樹脂。<<< Radical Polymerizable Compound> The resin composition in the present invention may further contain a radical polymerizable compound. By containing a radically polymerizable compound, a negative photosensitive resin composition can be preferably used. Furthermore, a cured film having more excellent heat resistance can be formed. As the radical polymerizable compound, a compound having an ethylenically unsaturated bond is preferred, and a compound containing two or more groups having an ethylenically unsaturated bond is more preferred. The radical polymerizable compound may be, for example, any of chemical forms such as a monomer, a prepolymer, an oligomer, a mixture thereof, and a multimer thereof. As the group having an ethylenically unsaturated bond, styryl, vinyl, (meth) acrylfluorenyl, and (meth) allyl are preferred, and (meth) acrylfluorenyl is more preferred. The radical polymerizable compound in the present invention is a component different from the resin. That is, a polyfluorene imide precursor having a radical polymerizable group, a polyfluorene imide having a radical polymerizable group, a polybenzoxazole precursor having a radical polymerizable group, and a radical polymerizable group Polybenzoxazole is equivalent to resin.
本發明中,單體類型的自由基聚合性化合物(以下,還稱為自由基聚合性單體)為與高分子化合物不同之化合物。自由基聚合性單體典型地是低分子化合物,且分子量2000以下的低分子化合物為較佳,分子量1500以下的低分子化合物為更佳,分子量900以下的低分子化合物為進一步較佳。此外,自由基聚合性單體的分子量通常為100以上。 又,寡聚物類型的自由基聚合性化合物典型地為分子量相對較低的聚合物,由10個~100個自由基聚合性單體鍵合而成之聚合物為較佳。作為分子量,利用凝膠滲透層析(GPC)法進行之聚苯乙烯換算的重量平均分子量是2000~20000為較佳,2000~15000為更佳,2000~10000為進一步較佳。In the present invention, a monomer-type radical polymerizable compound (hereinafter, also referred to as a radical polymerizable monomer) is a compound different from a polymer compound. The radical polymerizable monomer is typically a low-molecular compound, and a low-molecular compound having a molecular weight of 2,000 or less is preferred, a low-molecular compound having a molecular weight of 1500 or less is more preferred, and a low-molecular compound having a molecular weight of 900 or less is further preferred. The molecular weight of the radical polymerizable monomer is usually 100 or more. The oligomer-type radically polymerizable compound is typically a polymer having a relatively low molecular weight, and a polymer obtained by bonding 10 to 100 radically polymerizable monomers is preferred. As the molecular weight, a polystyrene-equivalent weight average molecular weight by a gel permeation chromatography (GPC) method is preferably 2,000 to 20,000, more preferably 2,000 to 15,000, and even more preferably 2,000 to 10,000.
本發明中的自由基聚合性化合物的官能基數是指1分子中的自由基聚合性基的數量。從分辨性的觀點考慮,樹脂組成物至少含有一種包含兩個以上的自由基聚合性基之2官能以上的自由基聚合性化合物為較佳,含有至少一種2~4官能自由基聚合性化合物為更佳。The number of functional groups of the radically polymerizable compound in the present invention refers to the number of radically polymerizable groups in one molecule. From the viewpoint of resolvability, it is preferable that the resin composition contains at least one type of a bifunctional or more radically polymerizable compound containing two or more radical polymerizable groups, and contains at least one type of a 2- to 4-functional radically polymerizable compound. Better.
作為自由基聚合性化合物,可列舉不飽和羧酸(例如,丙烯酸、甲基丙烯酸、衣康酸、巴豆酸、異巴豆酸、馬來酸等)或其酯類、醯胺類,較佳為不飽和羧酸與多元醇化合物的酯及不飽和羧酸與多元胺化合物的醯胺類。又,還可較佳地使用具有羥基或胺基、巰基等親和性取代基之不飽和羧酸酯或醯胺類與單官能或多官能異氰酸酯類或環氧類的加成反應物、與單官能或多官能的羧酸的脫水縮合反應物等。又,具有異氰酸酯基或環氧基等親電子性取代基之不飽和羧酸酯或醯胺類與單官能或多官能醇類、胺類、硫醇類的加成反應物及鹵素基或甲苯磺醯氧基等具有脫離性取代基之不飽和羧酸酯或醯胺類與單官能或多官能醇類、胺類、硫醇類的取代反應物亦為較佳。又,作為另一例,替代上述不飽和羧酸,能夠使用被不飽和膦酸、苯乙烯等乙烯基苯衍生物、乙烯醚、烯丙醚等取代之化合物組。作為具體例,能夠參閱日本特開2016-027357號公報的0113~0122段的記載,並將該些內容編入本說明書中。Examples of the radical polymerizable compound include unsaturated carboxylic acids (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) or their esters and amines, and more preferably Esters of unsaturated carboxylic acids and polyhydric alcohol compounds, and amines of unsaturated carboxylic acids and polyamine compounds. In addition, it is also preferable to use an addition reaction product of an unsaturated carboxylic acid ester or amidoamine having an affinity substituent such as a hydroxyl group, an amine group, or a mercapto group with a monofunctional or polyfunctional isocyanate or epoxy, and Dehydration condensation reactants of functional or polyfunctional carboxylic acids and the like. In addition, unsaturated carboxylic acid esters or amidoamines having an electrophilic substituent such as an isocyanate group or an epoxy group, and an addition reaction product of a monofunctional or polyfunctional alcohol, amine, or thiol, and a halogen group or toluene Substituted reactants of unsaturated carboxylic acid esters or amidoamines having detachable substituents such as sulfonyloxy groups and monofunctional or polyfunctional alcohols, amines, and thiols are also preferred. As another example, instead of the unsaturated carboxylic acid, a compound group substituted with a vinyl benzene derivative such as unsaturated phosphonic acid, styrene, vinyl ether, allyl ether, or the like can be used. As a specific example, the descriptions in paragraphs 0113 to 0122 of Japanese Patent Application Laid-Open No. 2016-027357 can be referred to, and these contents are incorporated into this specification.
作為自由基聚合性化合物,於常壓下具有100℃以上的沸點的化合物亦為較佳。作為其例,能夠列舉聚乙二醇二(甲基)丙烯酸酯、三羥甲基乙烷三(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯(Neopentyl glycol di(meth)acrylate)、季戊四醇三(甲基)丙烯酸酯(Pentaerythritol(meth)acrylate)、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、己二醇(甲基)丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三(丙烯醯氧基乙基)異氰脲酸酯、甘油或三羥甲基乙烷等在多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化之化合物、日本特公昭48-41708號公報、日本特公昭50-6034號公報、日本特開昭51-37193號公報中所記載之(甲基)丙烯酸胺基甲酸酯類、日本特開昭48-64183號公報、日本特公昭49-43191號公報、日本特公昭52-30490號公報中所記載之聚酯丙烯酸酯類,作為環氧樹脂與(甲基)丙烯酸的反應產物的環氧丙烯酸酯類等多官能的丙烯酸酯或甲基丙烯酸酯、以及該些的混合物。又,日本特開2008-292970號公報的0254~0257段中所記載之化合物亦為較佳。As the radical polymerizable compound, a compound having a boiling point of 100 ° C. or higher under normal pressure is also preferable. Examples thereof include polyethylene glycol di (meth) acrylate, trimethylolethane tri (meth) acrylate, and neoopentyl glycol di (meth) acrylate. acrylate), pentaerythritol tri (meth) acrylate, pentaerythritol (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, adipate Alcohols (meth) acrylates, trimethylolpropane tris (acryloxypropyl) ether, tris (acryloxyethyl) isocyanurate, glycerol or trimethylolethane, etc. A compound obtained by adding (meth) acrylate to functional alcohol by adding ethylene oxide or propylene oxide, Japanese Patent Publication No. 48-41708, Japanese Patent Publication No. 50-6034, Japanese Patent Publication No. 51-37193 (Meth) acrylic acid urethanes described in Japanese Patent Publication No. 48-64183, Japanese Patent Publication No. 49-43191, and Japanese Patent Publication No. 52-30490 Acrylate as epoxy tree Epoxy acrylates and (meth) acrylic acid reaction product of polyfunctional acrylate or methacrylate, and a mixture of these. The compounds described in paragraphs 0254 to 0257 of Japanese Patent Application Laid-Open No. 2008-292970 are also preferred.
作為自由基聚合性化合物,還能夠使用日本特開2010-160418號公報、日本特開2010-129825號公報、日本專利第4364216號公報等中所記載之具有茀環,且具有兩個以上的含有乙烯性不飽和鍵的基團的化合物或卡多(cardo)樹脂。進而,作為其他例,還能夠列舉日本特公昭46-43946號公報、日本特公平1-40337號公報、日本特公平1-40336號公報中所記載之特定的不飽和化合物、日本特開平2-25493號公報中所記載之乙烯基膦酸系化合物等。又,還能夠使用日本特開昭61-22048號公報中所記載之包含全氟烷基的化合物。進而,還能夠使用「Journal of the Adhesion Society of Japan」vol.20、No.7、300頁~308頁(1984年)中作為光聚合性單體及寡聚物所介紹者。As the radical polymerizable compound, it is also possible to use a fluorene ring described in Japanese Patent Application Laid-Open No. 2010-160418, Japanese Patent Application Laid-Open No. 2010-129825, Japanese Patent No. 4364216, and the like. Compounds of ethylenically unsaturated groups or cardo resins. Furthermore, as another example, Japanese Unexamined Patent Publication No. 46-43946, Japanese Unexamined Patent Publication No. 1-40337, Japanese Unexamined Patent Publication No. 1-40336, and specific unsaturated compounds described in Japanese Unexamined Patent Publication No. Hei 2-200 can be cited. A vinylphosphonic acid-based compound described in Japanese Patent No. 25493 and the like. In addition, a compound containing a perfluoroalkyl group described in Japanese Patent Application Laid-Open No. 61-22048 can also be used. Furthermore, the "Journal of the Adhesion Society of Japan" vol. 20, No. 7, pages 300 to 308 (1984) can also be used as the introducer of the photopolymerizable monomer and oligomer.
除了上述以外,還能夠較佳地使用由下述通式(MO-1)~(MO-5)表示之化合物。此外,式中,當T為氧伸烷基時,碳原子側的末端與R鍵結。In addition to the above, compounds represented by the following general formulae (MO-1) to (MO-5) can be preferably used. In the formula, when T is an oxyalkylene group, a carbon atom-side end is bonded to R.
[化學式20] [Chemical Formula 20]
[化學式21] [Chemical Formula 21]
於上述各式中,n為0~14的整數,m為0~8的整數。於分子內存在複數個之R、T可以分別相同,亦可以不同。 於由上述式(MO-1)~(MO-5)表示之化合物之每一個中,複數個R內的至少一個表示由-OC(=O)CH=CH2 或-OC(=O)C(CH3 )=CH2 表示之基團。 作為由上述式(MO-1)~(MO-5)表示之化合物的具體例,可列舉日本特開2007-269779號公報的0248~0251段中所記載之化合物。In each of the above formulas, n is an integer of 0 to 14, and m is an integer of 0 to 8. A plurality of R and T in the molecule may be the same or different. In each of the compounds represented by the above formulae (MO-1) to (MO-5), at least one of the plurality of Rs is represented by -OC (= O) CH = CH 2 or -OC (= O) C (CH 3 ) = A group represented by CH 2 . Specific examples of the compounds represented by the formulae (MO-1) to (MO-5) include compounds described in paragraphs 0248 to 0251 of Japanese Patent Application Laid-Open No. 2007-269779.
又,於日本特開平10-62986號公報中作為式(1)及式(2)與其具體例一同記載之如下化合物還能夠用作自由基聚合性化合物,該化合物是於多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化而成的化合物。進而,日本特開2015-187211號公報的0104~0131段中所記載之化合物亦能夠用作自由基聚合性化合物,並將該些內容編入本說明書中。In addition, the following compounds described in Japanese Patent Application Laid-Open No. 10-62986 as formulas (1) and (2) together with specific examples thereof can also be used as radical polymerizable compounds, which compounds are added to a polyfunctional alcohol A compound obtained by (meth) acrylated with ethylene oxide or propylene oxide. Furthermore, the compounds described in paragraphs 0104 to 0131 of Japanese Patent Application Laid-Open No. 2015-187211 can also be used as radical polymerizable compounds, and these contents are incorporated into this specification.
作為自由基聚合性化合物,二季戊四醇三丙烯酸酯(作為市售品為KAYARAD D-330;Nippon Kayaku Co.,Ltd.製)、二季戊四醇四丙烯酸酯(作為市售品為KAYARAD D-320;Nippon Kayaku Co.,Ltd.製、A-TMMT:Shin-Nakamura Chemical Co., Ltd.製)、二季戊四醇五(甲基)丙烯酸酯(作為市售品為KAYARAD D-310;Nippon Kayaku Co.,Ltd.製)、二季戊四醇六(甲基)丙烯酸酯(作為市售品為KAYARAD DPHA;Nippon Kayaku Co.,Ltd.製、A-DPH;Shin-Nakamura Chemical Co., Ltd.製)及該些的(甲基)丙烯醯基經由乙二醇殘基、丙二醇殘基鍵結之結構為較佳。還能夠使用它們的寡聚物類型。又,作為較佳的例,還可列舉上述式(MO-1)、式(MO-2)的季戊四醇衍生物和/或二季戊四醇衍生物。又,還能夠使用Sartomer company Inc.製SR209。As the radical polymerizable compound, dipentaerythritol triacrylate (commercially available product is KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.), and dipentaerythritol tetraacrylate (commercially available product is KAYARAD D-320; Nippon Kayaku Co., Ltd., A-TMMT: Shin-Nakamura Chemical Co., Ltd.), dipentaerythritol penta (meth) acrylate (KAYARAD D-310 as a commercial product; Nippon Kayaku Co., Ltd. .), Dipentaerythritol hexa (meth) acrylate (available commercially as KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd., A-DPH; manufactured by Shin-Nakamura Chemical Co., Ltd.) and these A structure in which the (meth) acrylfluorenyl group is bonded via an ethylene glycol residue and a propylene glycol residue is preferable. It is also possible to use their oligo type. In addition, as a preferable example, pentaerythritol derivatives and / or dipentaerythritol derivatives of the above formula (MO-1) and (MO-2) may be mentioned. It is also possible to use SR209 manufactured by Sartomer company Inc.
自由基聚合性化合物還可以具有羧基、磺基、磷酸基等酸基。作為市售品,例如可列舉作為TOAGOSEI CO.,LTD.製多元酸改質丙烯酸寡聚物之M-510、M-520等。作為具有酸基之自由基聚合性化合物的較佳的酸值,是0.1~40mgKOH/g,特佳為5~30mgKOH/g。若上述化合物的酸值為上述範圍,則製造和操作性優異,進而顯影性優異。又,自由基聚合性為良好。The radical polymerizable compound may have an acid group such as a carboxyl group, a sulfo group, or a phosphate group. Examples of commercially available products include M-510 and M-520, which are polyacid-modified acrylic oligomers produced by TOAGOSEI CO., LTD. The preferable acid value of the radically polymerizable compound having an acid group is 0.1 to 40 mgKOH / g, particularly preferably 5 to 30 mgKOH / g. When the acid value of the compound is in the above-mentioned range, the manufacturing and handling properties are excellent, and further the developability is excellent. Moreover, the radical polymerizability was favorable.
作為自由基聚合性化合物,還能夠使用具有己內酯結構之化合物。作為具有己內酯結構之化合物,只要於分子內具有己內酯結構,則並無特別限定,例如能夠列舉可藉由將三羥甲基乙烷、二三羥甲基乙烷、三羥甲基丙烷、二三羥甲基丙烷、季戊四醇、二季戊四醇、三季戊四醇、甘油、二甘油、三羥甲基三聚氰胺等多元醇和(甲基)丙烯酸及ε-己內酯酯化而得到之ε-己內酯改質多官能(甲基)丙烯酸酯。其中,由下述式(C)表示之化合物為較佳。As the radical polymerizable compound, a compound having a caprolactone structure can also be used. The compound having a caprolactone structure is not particularly limited as long as it has a caprolactone structure in the molecule, and examples thereof include trimethylolethane, ditrimethylolethane, and trimethylol. Polypropane, ditrimethylolpropane, pentaerythritol, dipentaerythritol, tripentaerythritol, glycerol, diglycerol, trimethylol melamine, etc., and (meth) acrylic acid and ε-caprolactone esterified ε-hexane Lactone modified polyfunctional (meth) acrylate. Among them, a compound represented by the following formula (C) is preferable.
式(C) [化學式22] Formula (C) [Chemical Formula 22]
式中,6個R均為由下述式(D)表示之基團,或6個R中的1~5個為由下述式(D)表示之基團,剩餘為由下述式(E)表示之基團。In the formula, 6 R are each a group represented by the following formula (D), or 1 to 5 of the 6 R are groups represented by the following formula (D), and the rest are represented by the following formula (D E) represents a group.
式(D) [化學式23] Formula (D) [Chemical Formula 23]
式中,R1 表示氫原子或甲基,m表示1或2,「*」表示鍵結鍵。In the formula, R 1 represents a hydrogen atom or a methyl group, m represents 1 or 2, and "*" represents a bonding bond.
式(E) [化學式24] Formula (E) [Chemical Formula 24]
式中,R1 表示氫原子或甲基,「*」表示鍵結鍵。In the formula, R 1 represents a hydrogen atom or a methyl group, and "*" represents a bonding bond.
具有該種己內酯結構之化合物例如由Nippon Kayaku Co.,Ltd作為KAYARAD DPCA系列而在市售中,且能夠列舉DPCA-20(於上述式(C)~(E)中,m=1,由式(D)表示之基團的數量=2,R1 均為氫原子之化合物)、DPCA-30(上述式中,m=1,由式(D)表示之基團的數量=3,R1 均為氫原子之化合物)、DPCA-60(上述式中,m=1,由式(D)表示之基團的數量=6,R1 均為氫原子之化合物)、DPCA-120(上述式中m=2,由式(D)表示之基團的數量=6、R1 均為氫原子之化合物)等。A compound having such a caprolactone structure is commercially available, for example, as KAYARAD DPCA series by Nippon Kayaku Co., Ltd. DPCA-20 (in the formulae (C) to (E) above, m = 1, The number of groups represented by formula (D) = 2, and R 1 is a hydrogen atom compound), DPCA-30 (in the above formula, m = 1, the number of groups represented by formula (D) = 3, R 1 is a compound of hydrogen atom), DPCA-60 (in the above formula, m = 1, the number of groups represented by formula (D) = 6, R 1 is a compound of hydrogen atom), DPCA-120 ( In the above formula, m = 2, the number of groups represented by formula (D) = 6, a compound in which R 1 is a hydrogen atom), and the like.
作為自由基聚合性化合物,選自由下述通式(i)或(ii)表示之化合物的組中之至少一種亦為較佳。As the radical polymerizable compound, at least one selected from the group of compounds represented by the following general formula (i) or (ii) is also preferable.
[化學式25] [Chemical Formula 25]
式(i)及式(ii)中,E各自獨立地表示-((CH2 )y CH2 O)-或-((CH2 )y CH(CH3 )O)-,y各自獨立地表示0~10的整數,X各自獨立地表示(甲基)丙烯醯基、氫原子或羧基。 式(i)中,(甲基)丙烯醯基的合計是3個或4個,m各自獨立地表示0~10的整數,各m的合計為0~40的整數。但是,各m的合計為0時,X中的任一個為羧基。 式(ii)中,(甲基)丙烯醯基的合計為5個或6個,n各自獨立地表示0~10的整數,各n的合計為0~60的整數。但是,各n的合計為0時,X中的任一個為羧基。In formulas (i) and (ii), E each independently represents-((CH 2 ) y CH 2 O)-or-((CH 2 ) y CH (CH 3 ) O)-, and y each independently represents An integer of 0 to 10, and X each independently represents a (meth) acrylfluorenyl group, a hydrogen atom, or a carboxyl group. In formula (i), the total number of (meth) acrylfluorenyl groups is three or four, m each independently represents an integer of 0 to 10, and the total of each m is an integer of 0 to 40. However, when the total of each m is 0, any one of X is a carboxyl group. In the formula (ii), the total number of (meth) acrylfluorenyl groups is five or six, n each independently represents an integer of 0 to 10, and the total of each n is an integer of 0 to 60. However, when the total of each n is 0, any one of X is a carboxyl group.
式(i)中,m是0~6的整數為較佳,0~4的整數為更佳。又,各m的合計是2~40的整數為較佳,2~16的整數為更佳,4~8的整數為特佳。 式(ii)中,n是0~6的整數為較佳,0~4的整數為更佳。又,各n的合計是3~60的整數為較佳,3~24的整數為更佳,6~12的整數為特佳。 式(i)或式(ii)中的-((CH2 )y CH2 O)-或-((CH2 )y CH(CH3 )O)-是氧原子側的末端與X鍵結之形態為較佳。尤其,於式(ii)中,6個X均為丙烯醯基之形態為較佳。In formula (i), m is preferably an integer of 0 to 6, and an integer of 0 to 4 is more preferred. The total of each m is preferably an integer of 2 to 40, an integer of 2 to 16 is more preferable, and an integer of 4 to 8 is particularly preferable. In formula (ii), n is preferably an integer of 0 to 6, and an integer of 0 to 4 is more preferred. In addition, the total of each n is preferably an integer of 3 to 60, an integer of 3 to 24 is more preferable, and an integer of 6 to 12 is particularly preferable. In formula (i) or (ii),-((CH 2 ) y CH 2 O)-or-((CH 2 ) y CH (CH 3 ) O)-is the end of the oxygen atom side and X bond The shape is better. In particular, in formula (ii), a form in which all six X's are acrylfluorenyl is preferable.
作為由式(i)及式(ii)表示之化合物的市售品,例如可列舉Sartomer company Inc.製的作為具有4個乙烯氧鏈之4官能丙烯酸酯之SR-494、Nippon Kayaku Co.,Ltd製的作為具有6個戊烯氧鏈之6官能丙烯酸酯之DPCA-60、作為具有3個異丁烯氧鏈之3官能丙烯酸酯之TPA-330等。Examples of commercially available compounds represented by the formulae (i) and (ii) include SR-494, Nippon Kayaku Co., which is a four-functional acrylate having four ethylene oxide chains, manufactured by Sartomer company Inc., Ltd. makes DPCA-60, which is a 6-functional acrylate having 6 pentene oxygen chains, TPA-330, which is a tri-functional acrylate having 3 isobutylene oxygen chains, and the like.
作為自由基聚合性化合物,日本特公昭48-41708號公報、日本特開昭51-37193號公報、日本特公平2-32293號公報、日本特公平2-16765號公報中所記載之胺基甲酸酯丙烯酸酯類、日本特公昭58-49860號公報、日本特公昭56-17654號公報、日本特公昭62-39417號公報、日本特公昭62-39418號公報中所記載之具有環氧乙烷系骨架之胺基甲酸酯化合物類亦為較佳。又,還能夠使用日本特開昭63-277653號公報、日本特開昭63-260909號公報、日本特開平1-105238號公報中所記載之於分子內具有胺基結構或硫醚結構之加成聚合性單體類。 作為市售品,可列舉胺基甲酸酯寡聚物UAS-10、UAB-140(Sanyo Kokusaku Pulp Co.,Ltd製)、NK酯M-40G、NK酯4G、NK酯M-9300、NK酯A-9300、UA-7200(Shin-Nakamura Chemical Co.,Ltd製)、DPHA-40H(Nippon Kayaku Co.,Ltd.製)、UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(Kyoeisha chemical Co.,Ltd.製)、BLEMMER PME400(NOF CORPORATION.製)等。As the radically polymerizable compound, the aminomethyl compounds described in Japanese Patent Publication No. 48-41708, Japanese Patent Application Publication No. 51-37193, Japanese Patent Publication No. 2-32293, and Japanese Patent Publication No. 2-16765. Ester acrylates, as disclosed in Japanese Patent Publication No. 58-49860, Japanese Patent Publication No. 56-17654, Japanese Patent Publication No. 62-39417, and Japanese Patent Publication No. 62-39418. Urethane compounds based on a skeleton are also preferable. In addition, it is also possible to use an additive having an amine structure or a thioether structure in the molecule described in Japanese Patent Application Laid-Open No. 63-277653, Japanese Patent Application Laid-Open No. 63-260909, and Japanese Patent Application Laid-Open No. 1-105238. Form polymerizable monomers. Examples of commercially available products include urethane oligomers UAS-10, UAB-140 (manufactured by Sanyo Kokusaku Pulp Co., Ltd), NK ester M-40G, NK ester 4G, NK ester M-9300, NK Esters A-9300, UA-7200 (manufactured by Shin-Nakamura Chemical Co., Ltd), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha chemical Co., Ltd.), BLEMMER PME400 (manufactured by NOF CORPORATION.), And the like.
作為自由基聚合性化合物,從耐熱性的觀點考慮,具有由下述式表示之部分結構為較佳。其中,式中的*為連接鍵。As the radical polymerizable compound, it is preferable to have a partial structure represented by the following formula from the viewpoint of heat resistance. Among them, * in the formula is a connection key.
[化學式26] [Chemical Formula 26]
作為具有上述部分結構之化合物的具體例,例如可列舉三羥甲基丙烷三(甲基)丙烯酸酯、異氰脲酸環氧乙烷改質二(甲基)丙烯酸酯、異氰脲酸環氧乙烷改質三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二羥甲基丙烷四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯等。Specific examples of the compound having the above partial structure include trimethylolpropane tri (meth) acrylate, isocyanurate ethylene oxide modified di (meth) acrylate, and isocyanurate ring. Ethylene oxide modified tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dimethylolpropane tetra (meth) acrylate, dipentaerythritol penta (methyl) ) Acrylate, dipentaerythritol hexa (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, etc.
於樹脂組成物中,從良好自由基聚合性與耐熱性的觀點考慮,自由基聚合性化合物的含量相對於樹脂組成物的總固體成分是1~50質量%為較佳。下限是5質量%以上為更佳。上限是30質量%以下為更佳。 又,樹脂(較佳為聚醯亞胺前驅物)與自由基聚合性化合物的質量比例(樹脂/聚醯亞胺前驅物/自由基聚合性化合物)是98/2~10/90為較佳,95/5~30/70為更佳,90/10~50/50為進一步較佳。若樹脂與自由基聚合性化合物的質量比例為上述範圍,則能夠形成硬化性及耐熱性更優異之硬化膜。自由基聚合性化合物可以僅使用一種,亦可以使用兩種以上。當使用兩種以上時,合計量成為上述範圍為較佳。In the resin composition, from the viewpoint of good radical polymerizability and heat resistance, the content of the radical polymerizable compound is preferably 1 to 50% by mass based on the total solid content of the resin composition. The lower limit is more preferably 5 mass% or more. The upper limit is more preferably 30% by mass or less. The mass ratio of the resin (preferably a polyfluorene imide precursor) to the radical polymerizable compound (resin / polyimide precursor / radical polymerizable compound) is preferably 98/2 to 10/90. 95/5 to 30/70 is more preferable, and 90/10 to 50/50 is more preferable. When the mass ratio of a resin and a radically polymerizable compound is the said range, a cured film which is more excellent in hardenability and heat resistance can be formed. The radical polymerizable compound may be used alone or in combination of two or more. When two or more kinds are used, the total amount is preferably within the above range.
<<光聚合起始劑>> 本發明中的樹脂組成物包含光聚合起始劑為較佳。作為光聚合起始劑,可列舉光陽離子聚合起始劑、光自由基聚合起始劑等,光自由基聚合起始劑為較佳。本發明中的樹脂組成物藉由包含光自由基聚合起始劑,於將樹脂組成物應用於半導體晶圓等基板而形成樹脂組成物層之後,照射光而引起由所產生之自由基導致之硬化,從而能夠降低光照射部中的溶解性。因此,例如具有如下優點:經由具有僅遮蔽電極部之圖案之光遮罩而對樹脂組成物層進行曝光,藉此依電極等的圖案而能夠簡單地製作溶解性不同之區域。<< Photoinitiator >> The resin composition in the present invention preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include a photocationic polymerization initiator, a photoradical polymerization initiator, and the like, and a photoradical polymerization initiator is preferred. The resin composition in the present invention contains a photoradical polymerization initiator, and after the resin composition is applied to a substrate such as a semiconductor wafer to form a resin composition layer, the light is caused by the generated free radicals. It is hardened, and the solubility in a light irradiation part can be reduced. Therefore, for example, there is an advantage that by exposing the resin composition layer through a light mask having a pattern that only shields the electrode portion, it is possible to easily create regions having different solubility depending on the pattern of the electrode or the like.
作為光聚合起始劑,並無特別限制,能夠從公知的光聚合起始劑中適當選擇。例如,對從紫外線區域至可見區域的光線具有感光性之光聚合起始劑為較佳。又,可以是與光激發之敏化劑產生某些作用而生成活性自由基之活性劑。光聚合起始劑至少含有一種於約300~800nm(較佳為330~500nm)的範圍內至少具有約50的莫耳吸光係數之化合物為較佳。化合物的莫耳吸光係數能夠利用公知的方法來測定。例如,利用紫外可見分光光度計(Varian公司製Cary-5 spectrophotometer),並使用乙酸乙酯溶劑,以0.01g/L的濃度進行測定為較佳。The photopolymerization initiator is not particularly limited, and can be appropriately selected from known photopolymerization initiators. For example, a photopolymerization initiator having sensitivity to light from the ultraviolet region to the visible region is preferred. In addition, it may be an active agent which generates a certain action with a photo-excited sensitizer and generates an active radical. The photopolymerization initiator preferably contains at least one compound having a Molar absorption coefficient of at least about 50 in the range of about 300 to 800 nm (preferably 330 to 500 nm). The molar absorption coefficient of a compound can be measured by a well-known method. For example, it is preferable to use an ultraviolet-visible spectrophotometer (Cary-5 spectrophotometer manufactured by Varian Corporation) and use ethyl acetate solvent to measure at a concentration of 0.01 g / L.
作為光聚合起始劑,能夠任意使用公知的化合物。例如可列舉鹵烴衍生物(例如,具有三嗪骨架之化合物、具有噁二唑骨架之化合物、具有三鹵甲基骨架之化合物)、醯基氧化膦等醯基膦化合物、六芳基雙咪唑、肟衍生物等肟化合物、有機過氧化物、硫代化合物、酮化合物、芳香族鎓鹽、酮肟醚、胺基苯乙酮化合物、羥基苯乙酮、偶氮類化合物、疊氮化合物、茂金屬化合物、有機硼化合物、鐵芳烴錯合物等。關於該些的詳細內容,能夠參閱日本特開2016-027357號公報的0165~0182段的記載,並將該內容編入本說明書中。又,作為酮化合物,例如可例示日本特開2015-087611號公報的0087段中所記載之化合物,並將該內容編入本說明書中。市售品中,還可較佳地使用KAYACURE DETX(Nippon Kayaku Co.,Ltd製)。As the photopolymerization initiator, a known compound can be arbitrarily used. Examples include halogenated hydrocarbon derivatives (for example, compounds having a triazine skeleton, compounds having an oxadiazole skeleton, and compounds having a trihalomethyl skeleton), fluorenylphosphine compounds such as fluorenylphosphine oxide, and hexaarylbisimidazole Oxime compounds such as oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, aminoacetophenone compounds, hydroxyacetophenone, azo compounds, azide compounds, Metallocene compounds, organic boron compounds, iron aromatic hydrocarbon complexes, and the like. Regarding these details, refer to the descriptions in paragraphs 0165 to 0182 of Japanese Patent Application Laid-Open No. 2016-027357 and incorporate the contents into this specification. In addition, as the ketone compound, for example, a compound described in paragraph 0087 of Japanese Patent Application Laid-Open No. 2015-087611 can be exemplified, and the content is incorporated into the present specification. Among commercially available products, KAYACURE DETX (manufactured by Nippon Kayaku Co., Ltd.) can also be preferably used.
作為光聚合起始劑,還能夠較佳地使用α-羥基酮化合物、α-胺基酮化合物、醯基膦化合物及茂金屬化合物。更具體而言,例如還能夠使用日本特開平10-291969號公報中所記載之光聚合起始劑、日本專利第4225898號中所記載之光聚合起始劑。 作為α-羥基酮化合物,能夠使用IRGACURE-184(IRGACURE為註冊商標)、DAROCUR-1173、IRGACURE-500、IRGACURE-2959、IRGACURE-127(商品名:均為BASF公司製)。 作為α-胺基酮化合物,能夠使用作為市售品之IRGACURE-907、IRGACURE-369及IRGACURE-379(商品名:均為BASF公司製)。作為α-胺基酮化合物,還能夠使用吸收極大波長與365nm或405nm等波長光源匹配之日本特開2009-191179號公報中所記載之化合物。 作為醯基膦化合物,可列舉2,4,6-三甲基苯甲醯基-二苯基-氧化膦等。又,能夠使用作為市售品之IRGACURE-819或IRGACURE-TPO(商品名:均為BASF公司製)。 作為茂金屬化合物,可例示IRGACURE-784(BASF公司製)等。As the photopolymerization initiator, an α-hydroxyketone compound, an α-amino ketone compound, a fluorenylphosphine compound, and a metallocene compound can also be preferably used. More specifically, for example, a photopolymerization initiator described in Japanese Patent Application Laid-Open No. 10-291969 and a photopolymerization initiator described in Japanese Patent No. 4225898 can also be used. As the α-hydroxyketone compound, IRGACURE-184 (IRGACURE is a registered trademark), DAROCUR-1173, IRGACURE-500, IRGACURE-2959, and IRGACURE-127 (trade names: all manufactured by BASF Corporation) can be used. As the α-amino ketone compound, commercially available IRGACURE-907, IRGACURE-369, and IRGACURE-379 (trade names: all manufactured by BASF Corporation) can be used. As the α-amino ketone compound, a compound described in Japanese Patent Application Laid-Open No. 2009-191179 can be used in which the absorption maximum wavelength matches a wavelength light source such as 365 nm or 405 nm. Examples of the fluorenylphosphine compound include 2,4,6-trimethylbenzylfluorenyl-diphenyl-phosphine oxide and the like. In addition, IRGACURE-819 or IRGACURE-TPO (trade name: both manufactured by BASF) can be used as commercially available products. Examples of the metallocene compound include IRGACURE-784 (manufactured by BASF).
作為光聚合起始劑,更佳為可列舉肟化合物。藉由使用肟化合物,能夠使曝光寬容度更有效地提高。肟化合物的曝光寬容度(曝光餘量)廣,並且還作為熱鹼產生劑而發揮作用,因此為特佳。 作為肟化合物的具體例,能夠使用日本特開2001-233842號公報中所記載之化合物、日本特開2000-80068號公報中所記載之化合物、日本特開2006-342166號公報中所記載之化合物。作為較佳的肟化合物,例如可列舉3-苯甲醯氧基亞胺基丁烷-2-酮,3-乙醯氧基亞胺基丁烷-2-酮、3-丙醯氧基亞胺基丁烷-2-酮,2-乙醯氧基亞胺基戊烷-3-酮、2-乙醯氧基亞胺基-1-苯基丙烷-1-酮,2-苯甲醯氧基亞胺基-1-苯基丙烷-1-酮、3-(4-甲苯磺醯氧基)亞胺基丁烷-2-酮及2-乙氧基羰氧基亞胺基-1-苯基丙烷-2-酮等。The photopolymerization initiator is more preferably an oxime compound. By using an oxime compound, exposure latitude can be improved more effectively. The oxime compound has a wide exposure latitude (exposure margin) and also functions as a hot alkali generator, so it is particularly preferable. As specific examples of the oxime compound, a compound described in JP 2001-233842, a compound described in JP 2000-80068, and a compound described in JP 2006-342166 can be used. . Preferred oxime compounds include, for example, 3-benzyloxyiminobutane-2-one, 3-ethoxyiminobutane-2-one, and 3-propanyloxyimine Aminobutane-2-one, 2-acetaminoiminopentane-3-one, 2-acetaminoimino-1-phenylpropane-1-one, 2-benzidine Oxyimino-1-phenylpropane-1-one, 3- (4-toluenesulfonyloxy) iminobutane-2-one, and 2-ethoxycarbonyloxyimino-1 -Phenylpropane-2-one and the like.
市售品中,還可較佳地使用IRGACURE OXE01、IRGACURE OXE02、IRGACURE OXE03、IRGACURE OXE04(以上為BASF公司製)、ADEKA OPTOMER N-1919(ADEKA CORPORATION製、日本特開2012-14052號公報中所記載之光聚合起始劑2)。又,還能夠使用TR-PBG-304(Changzhou Tronly New Electronic Materials CO.,LTD製)、ADEKA ARKLS NCI-831及ADEKA ARKLS NCI-930((ADEKA CORPORATION製)。又,能夠使用DFI-091(DAITO CHEMIX Co., Ltd. 製)。進而,還能夠使用具有氟原子之肟化合物。作為該種肟化合物的具體例,可列舉日本特開2010-262028號公報中所記載之化合物、日本特表2014-500852號公報的0345段中所記載之化合物24、36~40、日本特開2013-164471號公報的0101段中所記載之化合物(C-3)等。 作為最佳的肟化合物,可列舉日本特開2007-269779號公報中所示之具有特定取代基之肟化合物、日本特開2009-191061號公報中所示之具有硫芳基之肟化合物等。Among commercially available products, IRGACURE OXE01, IRGACURE OXE02, IRGACURE OXE03, IRGACURE OXE04 (the above are manufactured by BASF), ADEKA OPTOMER N-1919 (manufactured by ADEKA Corporation, Japanese Patent Application Publication No. 2012-14052) can also be preferably used Documented photopolymerization initiator 2). In addition, TR-PBG-304 (manufactured by Changzhou Tronly New Electronic Materials CO., LTD), ADEKA ARKLS NCI-831, and ADEKA ARKLS NCI-930 (manufactured by ADEKA CORPORATION) can be used. DFI-091 (DAITO (Manufactured by CHEMIX Co., Ltd.). Further, an oxime compound having a fluorine atom can be used. Specific examples of such an oxime compound include the compounds described in Japanese Patent Application Laid-Open No. 2010-262028, and Japanese Patent Application No. 2014 Compounds 24, 36 to 40 described in paragraph 0345 of Japanese Patent Publication No. -500852, and compounds (C-3) described in paragraph 0101 of Japanese Patent Application Laid-Open No. 2013-164471. Examples of the best oxime compound include An oxime compound having a specific substituent shown in Japanese Patent Application Laid-Open No. 2007-269779, an oxime compound having a sulfur aryl group shown in Japanese Patent Application Laid-Open No. 2009-191061, and the like.
作為光聚合起始劑,從曝光靈敏度的觀點考慮,選自三鹵甲基三嗪化合物、芐基二甲基縮酮化合物、α-羥基酮化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、茂金屬化合物、肟化合物、三芳基咪唑二聚體、鎓鹽化合物、苯并噻唑化合物、二苯甲酮化合物、苯乙酮化合物及其衍生物、環戊二烯-苯-鐵錯合物及其鹽、鹵甲基噁二唑化合物及3-芳基取代香豆素化合物中之至少一種為較佳,選自三鹵甲基三嗪化合物、α-羥基酮化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、茂金屬化合物、肟化合物、三芳基咪唑二聚體、鎓鹽化合物、二苯甲酮化合物及苯乙酮化合物中之至少一種為更佳,選自三鹵甲基三嗪化合物、α-羥基酮化合物、α-胺基酮化合物、肟化合物、三芳基咪唑二聚體及二苯甲酮化合物中之至少一種為進一步較佳,茂金屬化合物或肟化合物為進一步較佳,肟化合物為特佳。As the photopolymerization initiator, from the viewpoint of exposure sensitivity, it is selected from the group consisting of trihalomethyltriazine compounds, benzyldimethylketal compounds, α-hydroxyketone compounds, α-aminoketone compounds, and fluorenylphosphine compounds. , Phosphine oxide compound, metallocene compound, oxime compound, triarylimidazole dimer, onium salt compound, benzothiazole compound, benzophenone compound, acetophenone compound and its derivative, cyclopentadiene-benzene- At least one of an iron complex and a salt thereof, a halomethyloxadiazole compound, and a 3-aryl substituted coumarin compound is preferably selected from the group consisting of a trihalomethyltriazine compound, an α-hydroxyketone compound, α -At least one of an aminoketone compound, a fluorenylphosphine compound, a phosphine oxide compound, a metallocene compound, an oxime compound, a triarylimidazole dimer, an onium salt compound, a benzophenone compound, and an acetophenone compound is more preferable At least one selected from the group consisting of trihalomethyltriazine compound, α-hydroxyketone compound, α-amino ketone compound, oxime compound, triarylimidazole dimer and benzophenone compound is further preferred, and the metallocene Compound An oxime compound is further preferred, and an oxime compound is particularly preferred.
又,光聚合起始劑還能夠使用 二苯甲酮、N,N'-四甲基-4,4'-二胺基二苯甲酮(米其勒酮)等N,N'-四烷基-4,4'-二胺基二苯甲酮;2-苄基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮-1、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基-丙酮-1等芳香族酮;與烷基蒽醌等芳香環進行縮環而成的醌類;安息香烷基醚等安息香醚化合物、安息香、烷基安息香等安息香化合物;苯偶醯二甲基縮酮等苯偶醯衍生物等。又,還能夠使用由下述式(I)表示之化合物。 [化學式27]式(I)中,R50 為碳數1~20的烷基;被一個以上的氧原子中斷之碳數2~20的烷基;碳數1~12的烷氧基;苯基;碳數1~20的烷基、碳數1~12的烷氧基、鹵素原子、環戊基、環己基、碳數2~12的烯基、被一個以上的氧原子中斷之碳數2~18的烷基及被碳數1~4的烷基中的至少一個取代之苯基;或聯苯基,R51 為由式(II)表示之基團,或者是與R50 相同的基團。R52 ~R54 各自獨立地為碳數1~12的烷基、碳數1~12的烷氧基或鹵素。 [化學式28]式中,R55 ~R57 與上述式(I)的R52 ~R54 相同。As the photopolymerization initiator, N, N'-tetraane such as benzophenone and N, N'-tetramethyl-4,4'-diaminobenzophenone (Michler's ketone) can be used. -4,4'-diaminobenzophenone; 2-benzyl-2-dimethylamino-1- (4-morpholinylphenyl) -butanone-1, 2-methyl- Aromatic ketones such as 1- [4- (methylthio) phenyl] -2-morpholinyl-acetone-1; quinones formed by condensation with aromatic rings such as alkyl anthraquinone; benzoin alkyl ether Benzoin compounds such as benzoin ether compounds, benzoin and alkyl benzoin; benzoin derivatives such as benzoin dimethyl ketal and the like. A compound represented by the following formula (I) can also be used. [Chemical Formula 27] In formula (I), R 50 is an alkyl group having 1 to 20 carbon atoms; an alkyl group having 2 to 20 carbon atoms interrupted by one or more oxygen atoms; an alkoxy group having 1 to 12 carbon atoms; phenyl group; carbon number 1 to 20 alkyl groups, 1 to 12 alkoxy groups, halogen atoms, cyclopentyl, cyclohexyl, 2 to 12 alkenyl groups, and 2 to 18 carbon atoms interrupted by one or more oxygen atoms An alkyl group and a phenyl group substituted with at least one of alkyl groups having 1 to 4 carbons; or a biphenyl group, and R 51 is a group represented by formula (II), or the same group as R 50 . R 52 to R 54 are each independently an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, or a halogen. [Chemical Formula 28] In the formula, R 55 to R 57 are the same as R 52 to R 54 in the formula (I).
又,光聚合起始劑還能夠使用國際公開WO2015/125469號的0048~0055段中所記載之化合物。As the photopolymerization initiator, the compounds described in paragraphs 0048 to 0055 of International Publication No. WO2015 / 125469 can also be used.
光聚合起始劑的含量相對於樹脂組成物的總固體成分是0.1~30質量%為較佳,更佳為0.1~20質量%,進一步較佳為0.1~10質量%。光聚合起始劑可以僅含有一種,亦可以含有兩種以上。當含有兩種以上的光聚合起始劑時,其合計是上述範圍為較佳。The content of the photopolymerization initiator is preferably 0.1 to 30% by mass relative to the total solid content of the resin composition, more preferably 0.1 to 20% by mass, and still more preferably 0.1 to 10% by mass. The photopolymerization initiator may contain only one kind, or may contain two or more kinds. When two or more kinds of photopolymerization initiators are contained, the total thereof is preferably in the above range.
<<聚合抑制劑>> 本發明中的樹脂組成物包含聚合抑制劑為較佳。作為聚合抑制劑,例如可較佳地使用對苯二酚、對甲氧基苯酚、二-第三丁基-對甲酚、鄰苯三酚、對-第三丁基鄰苯二酚、對苯醌、二苯基-對苯醌、4,4’-硫代雙(3-甲基-6-第三丁基苯酚)、2,2’-亞甲基雙(4-甲基-6-第三丁基苯酚)、N-亞硝基-N-苯基羥基胺鋁鹽、吩噻嗪、N-亞硝基二苯胺、N-苯基萘胺、伸乙基二胺四乙酸、1,2-環己二胺四乙酸、乙二醇醚二胺四乙酸、2,6-二-第三丁基-4-甲基苯酚、5-亞硝基-8-羥基喹啉、1-亞硝基-2-萘酚、2-亞硝基-1-萘酚、2-亞硝基-5-(N-乙基-N-磺基丙基胺)苯酚、N-亞硝基-N-(1-萘基)羥胺銨鹽、雙(4-羥基-3,5-第三丁基)苯基甲烷等。又,亦能夠使用日本特開2015-127817號公報的0060段中所記載之聚合抑制劑及國際公開WO2015/125469號的0031~0046段中所記載之化合物。<<< polymerization inhibitor> It is preferable that the resin composition in the present invention contains a polymerization inhibitor. As the polymerization inhibitor, for example, hydroquinone, p-methoxyphenol, di-third-butyl-p-cresol, catechol, p-third-butylcatechol, p- Benzoquinone, diphenyl-p-benzoquinone, 4,4'-thiobis (3-methyl-6-third butylphenol), 2,2'-methylenebis (4-methyl-6 -Third butylphenol), N-nitroso-N-phenylhydroxylamine aluminum salt, phenothiazine, N-nitrosodiphenylamine, N-phenylnaphthylamine, ethylenediamine tetraacetic acid, 1,2-cyclohexanediamine tetraacetic acid, glycol ether diamine tetraacetic acid, 2,6-di-third-butyl-4-methylphenol, 5-nitroso-8-hydroxyquinoline, 1 -Nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5- (N-ethyl-N-sulfopropylamine) phenol, N-nitroso -N- (1-naphthyl) hydroxylamine ammonium salt, bis (4-hydroxy-3,5-third butyl) phenylmethane and the like. In addition, the polymerization inhibitors described in paragraph 0060 of Japanese Patent Laid-Open No. 2015-127817 and the compounds described in paragraphs 031 to 0046 of International Publication No. WO2015 / 125469 can also be used.
當樹脂組成物具有聚合抑制劑時,聚合抑制劑的含量相對於樹脂組成物的總固體成分是0.01~5質量%為較佳。聚合抑制劑可以是僅一種,亦可以為兩種以上。當聚合抑制劑為兩種以上時,其合計為上述範圍為較佳。When the resin composition has a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01 to 5% by mass with respect to the total solid content of the resin composition. The polymerization inhibitor may be only one kind, or two or more kinds. When there are two or more kinds of polymerization inhibitors, the total is preferably in the above range.
<<光鹼產生劑>> 本發明中的樹脂組成物可以包含光鹼產生劑。光鹼產生劑為藉由曝光而產生鹼者,於常溫常壓的通常條件下不顯示活性,但若是作為外部刺激而進行電磁波照射和加熱時,產生鹼(鹼性物質)者,則並無特別限定。藉由曝光而產生之鹼作為藉由對聚醯亞胺前驅物進行加熱而使其硬化時的觸媒而發揮作用,因此能夠較佳地使用於負型感光性樹脂組成物中。<<< Photobase generator> The resin composition in this invention may contain a photobase generator. The photo-alkali generator is one that generates alkali by exposure and does not show activity under normal conditions of normal temperature and pressure. However, if the alkali (alkali substance) is generated when the electromagnetic wave is irradiated and heated as external stimulus, Specially limited. The alkali generated by exposure functions as a catalyst when the polyimide precursor is heated and hardened, and therefore it can be preferably used in a negative photosensitive resin composition.
光鹼產生劑的含量只要能夠形成所希望的圖案,則並無特別限定,能夠設為通常的含量。光鹼產生劑的含量相對於樹脂組成物100質量份於0.01質量份以上且小於30質量份的範圍內為較佳,於0.05質量份~25質量份的範圍內為更佳,於0.1質量份~20質量份的範圍內為進一步較佳。The content of the photobase generator is not particularly limited as long as it can form a desired pattern, and it can be set to a normal content. The content of the photobase generator is preferably in a range of 0.01 parts by mass or more and less than 30 parts by mass based on 100 parts by mass of the resin composition, more preferably in a range of 0.05 parts by mass to 25 parts by mass, and more preferably 0.1 part by mass. The range of -20 mass parts is more preferable.
本發明中,作為光鹼產生劑能夠使用公知的化合物。例如,能夠列舉如於M.Shirai, and M.Tsunooka, Prog.Polym.Sci.,21,1(1996);角岡正弘,高分子加工,46,2(1997);C.Kutal,Coord.Chem.Rev.,211,353(2001);Y.Kaneko,A.Sarker,and D.Neckers,Chem.Mater.,11,170(1999);H.Tachi,M.Shirai, and M.Tsunooka,J.Photopolym.Sci.Technol.,13,153(2000);M.Winkle, and K.Graziano,J.Photopolym.Sci.Technol.,3,419(1990);M.Tsunooka,H.Tachi, and S.Yoshitaka,J.Photopolym.Sci.Technol.,9,13(1996);K.Suyama,H.Araki,M.Shirai,J.Photopolym.Sci.Technol.,19,81(2006)中所記載,如過度金屬化合物錯合物、具有銨鹽等結構者、如脒部分因與羧酸形成鹽而被潛在化者那樣,鹼成分因形成鹽而被中和之離子性化合物、胺基甲酸酯衍生物、肟酯衍生物、醯基化合物等藉由胺基甲酸酯鍵或肟鍵等而鹼成分被潛在化之非離子性化合物。又,使用WPBG-266(Wako Pure Chemical Industries, Ltd.製)亦為較佳。In the present invention, a known compound can be used as the photobase generator. For example, M. Shirai, and M. Tsusunooka, Prog. Polym. Sci., 21, 1 (1996); Masahiro Kakuoka, Polymer Processing, 46, 2 (1997); C. Kutal, Coord. Chem. Rev., 211, 353 (2001); Y. Kaneko, A. Sarker, and D. Neckers, Chem. Mater., 11, 170 (1999); H. Tachi, M. Shirai, and M. Tsunooka, J. Photopolym. Sci.Technol., 13,153 (2000); M. Winkle, and K. Graziano, J. Photopolym. Sci. Technol., 3, 419 (1990); M. Tsunooka, H. Tachi, and S. Yoshitaka, J. Photopolym. Sci. Technol., 9, 13 (1996); K. Suyama, H. Araki, M. Shirai, J. Photopolym. Sci. Technol., 19, 81 (2006), such as complexes of transition metal compounds Those with structures such as ammonium salts, such as those whose amidine is partially potentialized by forming salts with carboxylic acids, ionic compounds, carbamate derivatives, and oxime ester derivatives whose alkali components are neutralized due to salt formation , Fluorenyl compounds, etc. Nonionic compounds in which the alkali component is potentially converted by a urethane bond or an oxime bond. It is also preferable to use WPBG-266 (manufactured by Wako Pure Chemical Industries, Ltd.).
由光鹼產生劑產生之鹼性物質並無特別限定,可列舉具有胺基之化合物,尤其可列舉單胺、二胺等聚胺或脒等。 所產生之鹼性物質是具有鹼度更高的胺基之化合物為較佳。其原因為對聚醯亞胺前驅物的醯亞胺化中的脫水縮合反應等的觸媒作用強,且能夠添加少量來顯現於更低的溫度下的脫水縮合反應等中的觸媒效果。亦即,所產生之鹼性物質的觸媒效果大,因此作為樹脂組成物的外觀的靈敏度得以提高。從上述觸媒效果的觀點考慮,脒、脂肪族胺基為較佳。The basic substance produced by the photobase generator is not particularly limited, and examples thereof include compounds having an amine group, and in particular, polyamines such as monoamines and diamines, and fluorene. The generated basic substance is preferably a compound having an amine group having a higher basicity. The reason for this is that the catalyst effect on the dehydration condensation reaction during the polyimide precursor of the polyimide precursor is strong, and a small amount can be added to show the catalyst effect on the dehydration condensation reaction and the like at a lower temperature. That is, since the generated alkaline substance has a large catalyst effect, the sensitivity of the appearance as a resin composition is improved. From the viewpoint of the catalyst effect, fluorene and aliphatic amine groups are preferred.
光鹼產生劑是於結構中不包含鹽之光鹼產生劑為較佳。於光鹼產生劑中產生之鹼部分的氮原子上無電荷為較佳。光鹼產生劑中,所產生之鹼藉由使用共價鍵而被潛在化為較佳,鹼的產生機構是和與所產生之鹼部分的氮原子相鄰之原子之間的共價鍵被切斷而產生鹼之化合物為更佳。若為於結構中不包含鹽之光鹼產生劑,則能夠將光鹼產生劑中性化,因此溶劑溶解性良好,且適用期得以提高。從該種理由考慮,由本發明中所使用之光鹼產生劑產生之胺為1級胺或2級胺為較佳。The photobase generator is preferably a photobase generator which does not contain a salt in the structure. It is preferable that the nitrogen atom in the alkali portion generated in the photobase generator has no charge. In the photobase generator, the generated base is potentially made better by using a covalent bond. The base generation mechanism is a covalent bond between an atom adjacent to the nitrogen atom of the generated base portion. Compounds which are cleaved to produce a base are more preferred. If the photobase generator does not contain a salt in the structure, the photobase generator can be neutralized, so the solvent solubility is good, and the pot life is improved. For this reason, it is preferable that the amine generated from the photobase generator used in the present invention is a primary amine or a secondary amine.
又,從如上述那樣的理由考慮,光鹼產生劑中,如前述那樣產生之鹼使用共價鍵而被潛在化為較佳。又,所產生之鹼使用醯胺鍵、胺基甲酸酯鍵、肟鍵而被潛在化為更佳。In addition, for the reasons described above, it is preferable that the base generated as described above is potentially converted to a covalent bond in the photobase generator. Further, the generated base is more preferably converted to a amide bond, a urethane bond, or an oxime bond.
作為光鹼產生劑,還能夠使用日本特開2009-80452號公報及國際公開WO2009/123122號中所記載之具有肉桂酸醯胺結構之光鹼產生劑、日本特開2006-189591號公報及日本特開2008-247747號公報中所記載之具有胺基甲酸酯結構之光鹼產生劑、日本特開2007-249013號公報及日本特開2008-003581號公報中所記載之具有肟酯結構、胺甲醯肟結構之光鹼產生劑。As the photobase generator, a photobase generator having a cinnamic acid ammonium structure described in Japanese Patent Application Laid-Open No. 2009-80452 and International Publication No. WO2009 / 123122, Japanese Patent Application Laid-Open No. 2006-189591, and Japan can also be used. A photobase generator having a carbamate structure described in JP 2008-247747, a oxime ester structure described in JP 2007-249013 and JP 2008-003581, Photobase generator of carbamoxime structure.
除此以外,作為光鹼產生劑,可列舉日本特開2012-93746號公報的0185~0188、0199~0200及0202段中所記載之化合物、日本特開2013-194205號公報的0022~0069段中所記載之化合物、日本特開2013-204019號公報的0026~0074段中所記載之化合物、以及WO2010/064631號公報的0052段中所記載之化合物。In addition, examples of the photobase generator include compounds described in paragraphs 0185 to 0188, 0199 to 0200, and 0202 of Japanese Patent Laid-Open No. 2012-93746, and paragraphs 0022 to 0069 of Japanese Patent Laid-Open No. 2013-194205. Compounds described in paragraphs, compounds described in paragraphs 0026 to 0074 of Japanese Patent Application Laid-Open No. 2013-204019, and compounds described in paragraph 0052 of WO2010 / 064631.
<<熱鹼產生劑>> 本發明中的樹脂組成物可以包含熱鹼產生劑。作為熱鹼產生劑,包含選自加熱至40℃以上時產生鹼之酸性化合物(A1)及具有pKa1的0~4的陰離子和銨陽離子之銨鹽(A2)中之至少一種之熱鹼產生劑為較佳。在此,pKa1表示多元酸的第一質子的解離常數(Ka)的對數顯示(-Log10 Ka)。 上述酸性化合物(A1)及上述銨鹽(A2)為加熱時產生鹼者,因此能夠藉由由該些化合物產生之鹼而促進聚醯亞胺前驅物等的環化反應,且能夠於低溫下進行聚醯亞胺前驅物等的環化。又,關於該些化合物,即使於藉由鹼而環化並硬化之聚醯亞胺前驅物等共存,若不加熱則聚醯亞胺前驅物等的環化幾乎不進行,因此能夠製備保存穩定性優異之樹脂組成物。 此外,於本說明書中,酸性化合物是指,使用pH計,於20℃對如下溶液進行測定之pH值小於7之化合物,該溶液為將1g化合物採集到容器,添加50mL的離子交換水與四氫呋喃的混合液(質量比為水/四氫呋喃=1/4)而於室溫下攪拌1小時而得到之溶液。<<< Thermal alkali generator> The resin composition in this invention may contain a thermal alkali generator. The hot alkali generator includes a hot alkali generator selected from the group consisting of an acidic compound (A1) that generates a base when heated to 40 ° C or higher, and at least one of anion and ammonium cation (A2) having 0 to 4 pKa1. Is better. Here, pKa1 represents the logarithmic display (-Log 10 Ka) of the dissociation constant (Ka) of the first proton of the polyacid. The acidic compound (A1) and the ammonium salt (A2) are those that generate a base upon heating. Therefore, the cyclization reaction of a polyimide precursor and the like can be promoted by the base generated from these compounds, and can be used at low temperatures. Cyclization of polyimide precursors and the like is performed. Moreover, even if these compounds coexist with a polyimide precursor which is cyclized and hardened by an alkali, the cyclization of the polyimide precursor or the like hardly progresses without heating, so that it can be prepared and stored stably Resin composition with excellent properties. In addition, in the present specification, an acidic compound refers to a compound having a pH value of less than 7 measured at 20 ° C using a pH meter. The solution is obtained by collecting 1 g of the compound into a container and adding 50 mL of ion-exchanged water and tetrahydrofuran. The mixed solution (mass ratio: water / tetrahydrofuran = 1/4) was stirred at room temperature for 1 hour to obtain a solution.
酸性化合物(A1)及銨鹽(A2)的鹼產生溫度是40℃以上為較佳,120~200℃為更佳。鹼產生溫度的上限是190℃以下為更佳,180℃以下為進一步較佳,165℃以下為進一步較佳。鹼產生溫度的下限是130℃以上為更佳,135℃以上為進一步較佳。 若酸性化合物(A1)及銨鹽(A2)的鹼產生溫度為120℃以上,則於保存中不易產生鹼,因此能夠製備穩定性優異之樹脂組成物。若酸性化合物(A1)及銨鹽(A2)的鹼產生溫度為200℃以下,則能夠降低聚醯亞胺前驅物的環化溫度。鹼產生溫度例如能夠如下測定,亦即利用差示掃描量熱法,於耐壓膠囊中以5℃/分鐘將化合物加熱至250℃,並讀取最低溫度的發熱峰值的峰值溫度,且將峰值溫度作為鹼產生溫度。The alkali generating temperature of the acidic compound (A1) and the ammonium salt (A2) is preferably 40 ° C or higher, and more preferably 120 to 200 ° C. The upper limit of the alkali generation temperature is more preferably 190 ° C or lower, more preferably 180 ° C or lower, and even more preferably 165 ° C or lower. The lower limit of the alkali generation temperature is more preferably 130 ° C or more, and more preferably 135 ° C or more. If the alkali generation temperature of the acidic compound (A1) and the ammonium salt (A2) is 120 ° C or higher, it is difficult to generate an alkali during storage, so that a resin composition having excellent stability can be prepared. When the base generation temperature of the acidic compound (A1) and the ammonium salt (A2) is 200 ° C or lower, the cyclization temperature of the polyfluorene imide precursor can be reduced. The alkali generation temperature can be measured, for example, by using differential scanning calorimetry to heat the compound to 250 ° C at 5 ° C / min in a pressure-resistant capsule, and read the peak temperature of the lowest temperature exothermic peak, and The temperature is taken as the alkali generation temperature.
藉由熱鹼產生劑而產生之鹼是2級胺或3級胺為較佳,3級胺為更佳。3級胺的鹼性高,因此能夠進一步降低聚醯亞胺前驅物的環化溫度。又,藉由熱鹼產生劑而產生之鹼的沸點是80℃以上為較佳,100℃以上為更佳,140℃以上為最佳。又,所產生之鹼的分子量是80~2000為較佳。下限是100以上為更佳。上限是500以下為更佳。此外,分子量的值是依結構式求出之理論值。The base generated by the hot base generator is preferably a secondary amine or a tertiary amine, and a tertiary amine is more preferred. Tertiary amines are highly basic, so they can further reduce the cyclization temperature of polyfluorene imide precursors. The boiling point of the alkali generated by the hot alkali generator is preferably 80 ° C or higher, more preferably 100 ° C or higher, and most preferably 140 ° C or higher. The molecular weight of the generated base is preferably 80 to 2,000. The lower limit is more preferably 100 or more. The upper limit is preferably 500 or less. In addition, the value of molecular weight is a theoretical value calculated | required from a structural formula.
上述酸性化合物(A1)包含選自銨鹽及由後述式(A1)表示之化合物中之一種以上為較佳。The acidic compound (A1) preferably contains one or more selected from an ammonium salt and a compound represented by the formula (A1) described later.
上述銨鹽(A2)是酸性化合物為較佳。此外,上述銨鹽(A2)可以是包含加熱至40℃以上(較佳為120~200℃)時產生鹼之酸性化合物之化合物,亦可以是除加熱至40℃以上(較佳為120~200℃)時產生鹼之酸性化合物以外的化合物。The ammonium salt (A2) is preferably an acidic compound. In addition, the above-mentioned ammonium salt (A2) may be a compound containing an acidic compound that generates a base upon heating to 40 ° C or higher (preferably 120 to 200 ° C), or it may be a compound other than heating to 40 ° C or higher (preferably 120 to 200) ℃) to produce compounds other than the acidic compounds of the base.
本發明中,銨鹽是指由下述式(101)、或式(102)表示之銨陽離子與陰離子的鹽。陰離子可以經由共價鍵而與銨陽離子的任意一部分鍵結,亦可以於銨陽離子的分子外具有,於銨陽離子的分子外具有為較佳。此外,於銨陽離子的分子外具有陰離子是指,銨陽離子與陰離子未經由共價鍵而鍵結之情況。以下,將陽離子部的分子外的陰離子稱為抗衡陰離子。 [化學式29]上述式中,R1 ~R6 分別獨立地表示氫原子或烴基,式R7 表示烴基。R1 與R2 、R3 與R4 、R5 與R6 、R5 與R7 可以分別鍵結而形成環。In the present invention, the ammonium salt refers to a salt of an ammonium cation and an anion represented by the following formula (101) or formula (102). The anion may be bonded to any part of the ammonium cation through a covalent bond, and may also be provided outside the molecule of the ammonium cation, and it is preferably provided outside the molecule of the ammonium cation. In addition, having an anion outside the molecule of the ammonium cation means a case where the ammonium cation and the anion are not bonded by a covalent bond. Hereinafter, the anion outside the molecule of the cation part is called a counter anion. [Chemical Formula 29] In the above formula, R 1 to R 6 each independently represent a hydrogen atom or a hydrocarbon group, and the formula R 7 represents a hydrocarbon group. R 1 and R 2 , R 3 and R 4 , R 5 and R 6 , R 5 and R 7 may be bonded to form a ring, respectively.
本發明中,銨鹽具有pKa1為0~4的陰離子和銨陽離子為較佳。陰離子的pKa1的上限是3.5以下為更佳,3.2以下為進一步較佳。下限是0.5以上為更佳,1.0以上為進一步較佳。若陰離子的pKa1為上述範圍,則能夠於低溫下使聚醯亞胺前驅物等環化,進而能夠提高樹脂組成物的穩定性。若pKa1為4以下,則熱鹼產生劑的穩定性良好,能夠抑制未加熱而產生鹼之情況,且樹脂組成物的穩定性良好。若pKa1為0以上,則所產生之鹼不易中和,且聚醯亞胺前驅物等的環化效率良好。 陰離子的種類是選自羧酸根陰離子、苯酚陰離子、磷酸根陰離子及硫酸根陰離子中之一種為較佳,從兼備鹽的穩定性和熱分解性之理由考慮,羧酸根陰離子為更佳。亦即,銨鹽是銨陽離子與羧酸根陰離子的鹽為更佳。 羧酸根陰離子是具有兩個以上的羧基的2價以上的羧酸的陰離子為較佳,2價羧酸的陰離子為更佳。依該態樣,能夠設為能夠進一步提高樹脂組成物的穩定性、硬化性及顯影性之熱鹼產生劑。尤其,藉由使用2價羧酸的陰離子,能夠進一步提高樹脂組成物的穩定性、硬化性及顯影性。 本發明中,羧酸根陰離子是pKa1為4以下的羧酸的陰離子為較佳。pKa1是3.5以下為更佳,3.2以下為進一步較佳。依該態樣,能夠進一步提高樹脂組成物的穩定性。 其中,pKa1表示酸的第一解離常數的倒數的對數,且能夠參閱Determination of Organic Structures by Physical Methods(有機結構的物理鑑定法)(著者:Brown, H. C., McDaniel, D. H., Hafliger, O., Nachod, F. C.; 編輯:Braude, E. A., Nachod, F. C.; Academic Press, New York, 1955)、Data for Biochemical Research(有機結構的物理鑑定法)(著者:Dawson, R.M.C.et al;Oxford, Clarendon Press, 1959)中所記載之值。關於未記載於該些文獻中之化合物,使用利用ACD/pKa(ACD/Labs製)的軟體並依結構式所計算出之值。In the present invention, it is preferable that the ammonium salt has an anion and an ammonium cation having a pKa1 of 0 to 4. The upper limit of the pKa1 of the anion is more preferably 3.5 or less, and even more preferably 3.2 or less. The lower limit is more preferably 0.5 or more, and more preferably 1.0 or more. When the pKa1 of the anion is within the above range, the polyfluorene imide precursor and the like can be cyclized at a low temperature, and the stability of the resin composition can be improved. When pKa1 is 4 or less, the stability of the hot alkali generator is good, the generation of alkali without heating can be suppressed, and the stability of the resin composition is good. When pKa1 is 0 or more, the generated base is not easily neutralized, and the cyclization efficiency of the polyfluorene imide precursor and the like is good. The type of the anion is preferably one selected from the group consisting of a carboxylate anion, a phenol anion, a phosphate anion, and a sulfate anion, and a carboxylate anion is more preferable for reasons of having both the stability of a salt and the thermal decomposition property. That is, the ammonium salt is more preferably a salt of an ammonium cation and a carboxylate anion. The carboxylate anion is preferably an anion of a divalent or higher carboxylic acid having two or more carboxyl groups, and more preferably an anion of a divalent carboxylic acid. According to this aspect, it can be set as the hot alkali generator which can further improve the stability, hardenability, and developability of a resin composition. In particular, by using an anion of a divalent carboxylic acid, the stability, curability, and developability of the resin composition can be further improved. In the present invention, the carboxylate anion is preferably an anion of a carboxylic acid having a pKa1 of 4 or less. It is more preferable that pKa1 is 3.5 or less, and it is more preferable that 3.2 or less. According to this aspect, the stability of the resin composition can be further improved. Among them, pKa1 represents the logarithm of the inverse of the first dissociation constant of the acid, and can refer to Determination of Organic Structures by Physical Methods (Author: Brown, HC, McDaniel, DH, Hafliger, O., Nachod , FC; Editor: Braude, EA, Nachod, FC; Academic Press, New York, 1955), Data for Biochemical Research (Physical Identification of Organic Structures) (Author: Dawson, RMCet al; Oxford, Clarendon Press, 1959) The value recorded in. For compounds not described in these documents, the values calculated by the structural formula using software using ACD / pKa (manufactured by ACD / Labs) were used.
本發明中,羧酸根陰離子由下述式(X1)表示為較佳。 [化學式30]式(X1)中,EWG表示吸電子基。In the present invention, the carboxylate anion is preferably represented by the following formula (X1). [Chemical Formula 30] In the formula (X1), EWG represents an electron withdrawing group.
本發明中,吸電子基是指,哈米特(Hammett)的取代基常數σm表示正值者。其中,σm於都野雄甫的總論、「有機合成化學協會誌」第23卷第8號(1965)P.631-642中有詳細說明。此外,本發明的吸電子基並不限定於上述文獻中所記載之取代基。 作為σm表示正值之取代基的例,例如可列舉CF3 基(σm=0.43)、CF3 CO基(σm=0.63)、HC≡C基(σm=0.21)、CH2 =CH基(σm=0.06)、Ac基(σm=0.38)、MeOCO基(σm=0.37)、MeCOCH=CH基(σm=0.21)、PhCO基(σm=0.34)、H2 NCOCH2 基(σm=0.06)等。此外,Me表示甲基,Ac表示乙醯基,Ph表示苯基。In the present invention, the electron-withdrawing group means that the substituent constant σm of Hammett represents a positive value. Among them, σm is explained in detail in Tono's general comment, "Journal of the Society of Organic Synthetic Chemistry", Vol. 23 No. 8 (1965) P.631-642. The electron-withdrawing group of the present invention is not limited to the substituents described in the aforementioned documents. Examples of substituents in which σm represents a positive value include CF 3 group (σm = 0.43), CF 3 CO group (σm = 0.63), HC≡C group (σm = 0.21), and CH 2 = CH group (σm = 0.06), Ac group (σm = 0.38), MeOCO group (σm = 0.37), MeCOCH = CH group (σm = 0.21), PhCO group (σm = 0.34), H 2 NCOCH 2 group (σm = 0.06), etc. In addition, Me represents a methyl group, Ac represents an ethenyl group, and Ph represents a phenyl group.
本發明中,EWG是由下述式(EWG-1)~(EWG-6)表示之基團為較佳。 [化學式31]式中,Rx1 ~Rx3 分別獨立地表示氫原子、烷基、烯基、芳基、羥基或羧基,Ar表示芳基。In the present invention, EWG is preferably a group represented by the following formulae (EWG-1) to (EWG-6). [Chemical Formula 31] In the formula, R x1 to R x3 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, a hydroxyl group, or a carboxyl group, and Ar represents an aryl group.
本發明中,羧酸根陰離子是由下述式(X)表示者亦為較佳。 [化學式32]式(X)中,L10 表示單鍵或選自伸烷基、伸烯基、伸芳基、-NRX -及它們的組合中之2價連結基,RX 表示氫原子、烷基、烯基或芳基。In the present invention, it is also preferred that the carboxylate anion is represented by the following formula (X). [Chemical Formula 32] In the formula (X), L 10 represents a single bond or a divalent linking group selected from the group consisting of an alkylene group, an alkenyl group, an arylene group, -NR X- , and a combination thereof, and R X represents a hydrogen atom, an alkyl group, Alkenyl or aryl.
作為羧酸根陰離子的具體例,可列舉馬來酸根陰離子、鄰苯二甲酸根陰離子、N-苯基亞胺基二乙酸根陰離子及草酸根陰離子。能夠較佳地使用該些。Specific examples of the carboxylate anion include a maleate anion, a phthalate anion, an N-phenylimide diacetate anion, and an oxalate anion. These can be preferably used.
銨陽離子由下述通式(Y1-1)~(Y1-6)中的任一個表示為較佳。 [化學式33] The ammonium cation is preferably represented by any one of the following general formulae (Y1-1) to (Y1-6). [Chemical Formula 33]
於上述通式中,R101 表示n價有機基, R102 ~R111 分別獨立地表示氫原子或烴基, R150 及R151 分別獨立地表示烴基, R104 與R105 、R104 與R150 、R107 與R108 及R109 與R110 可以彼此鍵結而形成環, Ar101 及Ar102 分別獨立地表示芳基, n表示1以上的整數, m表示0~5的整數。In the above general formula, R 101 represents an n-valent organic group, R 102 to R 111 each independently represent a hydrogen atom or a hydrocarbon group, R 150 and R 151 each independently represent a hydrocarbon group, R 104 and R 105 , R 104 and R 150 R 107 and R 108 and R 109 and R 110 may be bonded to each other to form a ring. Ar 101 and Ar 102 each independently represent an aryl group, n represents an integer of 1 or more, and m represents an integer of 0 to 5.
R104 與R105 、R104 與R150 、R107 與R108 及R109 與R110 可以彼此鍵結而形成環。作為環,可列舉脂肪族環(非芳香性烴環)、芳香環、雜環等。環可以是單環,亦可以是多環。作為由上述基團鍵結而形成環時的連結基,可列舉選自包含-CO-、-O-、-NH-、2價脂肪族基、2價芳基及它們的組合之組中之2價連結基。作為所形成之環的具體例,例如可列舉吡咯啶環、吡咯環、哌啶環、吡啶環、咪唑環、吡唑環、噁唑環、噻唑環、吡嗪環、嗎啉環、噻嗪環、吲哚環、異吲哚環、苯并咪唑環、嘌呤環、喹啉環、異喹啉環、喹噁啉環、噌啉環、咔唑環等。R 104 and R 105 , R 104 and R 150 , R 107 and R 108, and R 109 and R 110 may be bonded to each other to form a ring. Examples of the ring include an aliphatic ring (non-aromatic hydrocarbon ring), an aromatic ring, and a heterocyclic ring. Rings can be monocyclic or polycyclic. Examples of the linking group when a ring is formed by the above-mentioned group bonding include a group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aryl group, and combinations thereof. 2-valent link base. Specific examples of the formed ring include a pyrrolidine ring, a pyrrole ring, a piperidine ring, a pyridine ring, an imidazole ring, a pyrazole ring, an oxazole ring, a thiazole ring, a pyrazine ring, a morpholine ring, and a thiazine. Ring, indole ring, isoindole ring, benzimidazole ring, purine ring, quinoline ring, isoquinoline ring, quinoxaline ring, perylene ring, carbazole ring, and the like.
本發明中,銨陽離子是由式(Y1-1)或式(Y1-2)表示之結構為較佳,由式(Y1-1)或式(Y1-2)表示,且R101 是芳基之結構為更佳,由式(Y1-1)表示,且R101 是芳基之結構為特佳。亦即,本發明中,銨陽離子由下述式(Y)表示為更佳。 [化學式34]式(Y)中,Ar10 表示芳香族基,R11 ~R15 分別獨立地表示氫原子或烴基,R14 與R15 可以彼此鍵結而形成環,n表示1以上的整數。In the present invention, the ammonium cation is preferably a structure represented by the formula (Y1-1) or (Y1-2), and is represented by the formula (Y1-1) or (Y1-2), and R 101 is an aryl group. The structure is more preferred, and is represented by formula (Y1-1), and the structure where R 101 is an aryl group is particularly preferred. That is, in the present invention, the ammonium cation is more preferably represented by the following formula (Y). [Chemical Formula 34] In formula (Y), Ar 10 represents an aromatic group, R 11 to R 15 each independently represent a hydrogen atom or a hydrocarbon group, R 14 and R 15 may be bonded to each other to form a ring, and n represents an integer of 1 or more.
R11 及R12 分別獨立地表示氫原子或烴基。作為烴基,並無特別限定,烷基、烯基或芳基為較佳。 R11 及R12 是氫原子為較佳。R 11 and R 12 each independently represent a hydrogen atom or a hydrocarbon group. The hydrocarbon group is not particularly limited, and an alkyl group, an alkenyl group or an aryl group is preferred. R 11 and R 12 are preferably a hydrogen atom.
R13 ~R15 表示氫原子或烴基。 作為烴基,可列舉以上述R11 、R12 進行說明之烴基。R13 ~R15 尤其是烷基為較佳,較佳的態樣亦與以R11 、R12 進行說明者相同。R 13 to R 15 each represent a hydrogen atom or a hydrocarbon group. Examples of the hydrocarbon group include the hydrocarbon groups described with reference to R 11 and R 12 . R 13 to R 15 are particularly preferably an alkyl group, and the preferred embodiments are the same as those described with R 11 and R 12 .
R14 與R15 可以彼此鍵結而形成環。作為環,可列舉環狀脂肪族(非芳香性烴環)、芳香環、雜環等。環可以是單環,亦可以是多環。作為R14 與R15 鍵結而形成環時的連結基,可列舉選自包括-CO-、-O-、-NH-、2價脂肪族基、2價芳香族基及它們的組合之組中之2價連結基。作為所形成之環的具體例,例如可列舉吡咯啶環、吡咯環、哌啶環、吡啶環、咪唑環、吡唑環、噁唑環、噻唑環、吡嗪環、嗎啉環、噻嗪環、吲哚環、異吲哚環、苯并咪唑環、嘌呤環、喹啉環、異喹啉環、喹噁啉環、噌啉環、咔唑環等。R 14 and R 15 may be bonded to each other to form a ring. Examples of the ring include a cyclic aliphatic (non-aromatic hydrocarbon ring), an aromatic ring, and a heterocyclic ring. Rings can be monocyclic or polycyclic. Examples of the linking group when R 14 and R 15 are bonded to form a ring include a group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and combinations thereof. The bivalent link base. Specific examples of the formed ring include a pyrrolidine ring, a pyrrole ring, a piperidine ring, a pyridine ring, an imidazole ring, a pyrazole ring, an oxazole ring, a thiazole ring, a pyrazine ring, a morpholine ring, and a thiazine. Ring, indole ring, isoindole ring, benzimidazole ring, purine ring, quinoline ring, isoquinoline ring, quinoxaline ring, perylene ring, carbazole ring, and the like.
R13 ~R15 中,R14 與R15 彼此鍵結而形成環,或者R13 為碳數5~30(更佳為碳數6~18)的直鏈烷基,R14 及R15 分別獨立地是碳數1~3(更佳為碳數1或2)的烷基為較佳。依該態樣,能夠輕鬆地產生沸點高的胺種。 又,從所產生之胺種的鹼性或沸點的觀點考慮、R13 、R14 及R15 的碳原子的總數是7~30為較佳,10~20為更佳。 又,從容易產生沸點高的胺種之理由考慮,式(Y)中的「-NR13 R14 R15 」的化學式量是80~2000為較佳,100~500為更佳。Among R 13 to R 15 , R 14 and R 15 are bonded to each other to form a ring, or R 13 is a linear alkyl group having 5 to 30 carbon atoms (more preferably 6 to 18 carbon atoms), and R 14 and R 15 are respectively An alkyl group independently having 1 to 3 carbon atoms (more preferably 1 or 2 carbon atoms) is preferred. According to this aspect, it is possible to easily produce amine species having a high boiling point. From the viewpoint of the basicity or boiling point of the amine species to be generated, the total number of carbon atoms of R 13 , R 14 and R 15 is preferably 7 to 30, and more preferably 10 to 20. From the reason that amine species with a high boiling point are easily generated, the amount of the chemical formula of "-NR 13 R 14 R 15 " in the formula (Y) is preferably 80 to 2000, and more preferably 100 to 500.
又,作為用於進一步提高與銅等金屬層的黏合性之實施形態,可列舉於式(Y)中,R13 及R14 為甲基或乙基,R15 為碳數5以上的直鏈、分支或環狀烷基,為芳基之形態。R13 及R14 為甲基,R15 為碳數5~20的直鏈烷基、碳數6~17的分支烷基、碳數6~10的環狀烷基或苯基為較佳,R13 及R14 為甲基,R15 為碳數5~10的直鏈烷基、碳數6~10的分支烷基、碳數6~8的環狀烷基或苯基為更佳。藉由如此降低胺種的疏水性,即使將胺黏附於銅等金屬層上之情況下,亦能夠提高金屬層與聚醯亞胺等的親和性。Further, as an embodiment for further improving the adhesion with a metal layer such as copper, in formula (Y), R 13 and R 14 are methyl or ethyl groups, and R 15 is a straight chain having 5 or more carbon atoms. , Branched or cyclic alkyl, in the form of aryl. R 13 and R 14 are methyl groups, R 15 is a linear alkyl group having 5 to 20 carbon atoms, a branched alkyl group having 6 to 17 carbon atoms, a cyclic alkyl group having 6 to 10 carbon atoms or a phenyl group, R 13 and R 14 are methyl groups, and R 15 is preferably a linear alkyl group having 5 to 10 carbon atoms, a branched alkyl group having 6 to 10 carbon atoms, a cyclic alkyl group having 6 to 8 carbon atoms, or a phenyl group. By reducing the hydrophobicity of the amine species in this way, even when the amine is adhered to a metal layer such as copper, the affinity between the metal layer and polyfluorene is improved.
本發明中,酸性化合物是由下述式(A1)表示之化合物亦為較佳。該化合物於室溫下為酸性,且藉由加熱而羧基會脫碳酸或脫水環化而消失,藉此,之前得到中和而鈍化之胺部位變成活性,由此變成鹼性。以下,對式(A1)進行說明。In the present invention, it is also preferred that the acidic compound is a compound represented by the following formula (A1). The compound is acidic at room temperature, and the carboxyl group is decarbonated or dehydrated and cyclized by heating to disappear, whereby the previously neutralized and passivated amine site becomes active, thereby becoming alkaline. Expression (A1) will be described below.
式(A1) [化學式35]於式(A1)中,A1 表示p價有機基,R1 表示1價有機基,L1 表示(m+1)價連結基,m表示1以上的整數,p表示1以上的整數。Formula (A1) [Chemical Formula 35] In Formula (A1), A 1 represents a p-valent organic group, R 1 represents a mono-valent organic group, L 1 represents a (m + 1) -valent linking group, m represents an integer of 1 or more, and p represents an integer of 1 or more.
式(A1)中,A1 表示p價有機基。作為有機基,可列舉脂肪族基、芳香族基等,芳香族基為較佳。藉由將A1 設為芳香族基,能夠輕鬆地於更低的溫度下產生沸點高的鹼。藉由提高所產生之鹼的沸點,能夠抑制聚醯亞胺前驅物於硬化時因加熱而揮發或分解,且更加有效地進行聚醯亞胺前驅物的環化。 作為1價脂肪族基,例如可列舉烷基、烯基等。 烷基的碳數是1~30為較佳,1~20為更佳,1~10為進一步較佳。烷基可以是直鏈、分支、環狀中的任一種。烷基可以具有取代基,亦可以未經取代。作為烷基的具體例,可列舉甲基、乙基、第三丁基、十二烷基、環戊基、環己基、環庚基、金剛烷基等。 烯基的碳數是2~30為較佳,2~20為更佳,2~10為進一步較佳。烯基可以是直鏈、分支、環狀中的任一種。烯基可以具有取代基,亦可以未經取代。作為烯基,可列舉乙烯基、(甲基)烯丙基等。 作為2價以上的脂肪族基,可列舉從上述1價脂肪族基去除一個氫原子而成之基團。 芳香族基可以是單環,亦可以是多環。芳香族基可以是包含雜原子之芳香族雜環基。芳香族基可以具有取代基,亦可以未經取代。未經取代為較佳。作為芳香族基的具體例,可列舉苯環基、萘環基、戊搭烯環基、茚環基、薁環基、庚搭烯環基、茚烯環基、苝環基、稠五苯環基、苊烯環基、菲環基、蒽環基、稠四苯環基、䓛環基、三伸苯環基、茀環基、聯苯環基、吡咯環基、呋喃環基、噻吩環基、咪唑環基、噁唑環基、噻唑環基、吡啶環基、吡嗪環基、嘧啶環基、噠嗪環基、吲哚嗪環基、吲哚環基、苯并呋喃環基、苯并噻吩環基、異苯并呋喃環基、喹嗪環基、喹啉環基、酞嗪環基、萘啶環基、喹噁啉環基、喹噁唑啉環基、異喹啉環基、咔唑環基、啡啶環基、吖啶環基、啡啉環基、噻蒽環基、苯并吡喃環基、呫噸環基、啡噁噻環基、啡噻嗪環基及啡嗪環基,苯環基為最佳。 芳香族基還可以使複數個芳香環經由單鍵或後述的連結基而連結。作為連結基,例如伸烷基為較佳。伸烷基為直鏈、分支中的任一種亦為較佳。作為由複數個芳香環經由單鍵或連結基而連結之基團的具體例,可列舉聯苯基、二苯基甲烷基、二苯基丙烷基、二苯基異丙烷基、三苯基甲烷基、四苯基甲烷基等。In the formula (A1), A 1 represents a p-valent organic group. Examples of the organic group include an aliphatic group and an aromatic group. An aromatic group is preferred. By making A 1 an aromatic group, a base with a high boiling point can be easily produced at a lower temperature. By increasing the boiling point of the generated alkali, the polyimide precursor can be prevented from volatilizing or decomposing due to heating during hardening, and the polyimide precursor can be more effectively cyclized. Examples of the monovalent aliphatic group include an alkyl group and an alkenyl group. The carbon number of the alkyl group is preferably from 1 to 30, more preferably from 1 to 20, and even more preferably from 1 to 10. The alkyl group may be any of linear, branched, and cyclic. The alkyl group may have a substituent or may be unsubstituted. Specific examples of the alkyl group include methyl, ethyl, third butyl, dodecyl, cyclopentyl, cyclohexyl, cycloheptyl, and adamantyl. The carbon number of the alkenyl group is preferably from 2 to 30, more preferably from 2 to 20, and even more preferably from 2 to 10. The alkenyl group may be any of linear, branched, and cyclic. The alkenyl group may have a substituent or may be unsubstituted. Examples of the alkenyl group include a vinyl group and a (meth) allyl group. Examples of the divalent or higher aliphatic group include a group obtained by removing one hydrogen atom from the monovalent aliphatic group. The aromatic group may be monocyclic or polycyclic. The aromatic group may be an aromatic heterocyclic group containing a hetero atom. The aromatic group may have a substituent or may be unsubstituted. Unsubstituted is better. Specific examples of the aromatic group include a benzene ring group, a naphthalene ring group, a pentalene ring group, an indenyl ring group, a fluorenyl ring group, a heptene ring group, an indenene ring group, a fluorenyl ring group, and a condensed pentaphenyl group. Ring group, pinene ring group, phenanthrene ring group, anthracene ring group, fused tetraphenyl ring group, fluorene ring group, triphenylene ring group, fluorene ring group, biphenyl ring group, pyrrole ring group, furan ring group, thiophene Ring group, imidazole ring group, oxazole ring group, thiazole ring group, pyridine ring group, pyrazine ring group, pyrimidine ring group, pyridazine ring group, indazine ring group, indole ring group, benzofuran ring group Benzothiophene ring, isobenzofuran ring, quinazine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoxazoline ring, isoquinoline Ring group, carbazole ring group, morphinyl ring group, acridine ring group, phenanthroline ring group, thienthyl ring group, benzopyran ring group, xanthene ring group, phenoxaline group, phenothiazine ring And phenazine ring, benzene ring is the best. The aromatic group may have a plurality of aromatic rings connected via a single bond or a linking group described later. As the linking group, for example, an alkylene group is preferred. It is also preferable that the alkylene group is any of a linear chain and a branch. Specific examples of the group in which a plurality of aromatic rings are connected via a single bond or a linking group include biphenyl, diphenylmethane, diphenylpropane, diphenylisopropyl, and triphenylmethane. Group, tetraphenylmethane and the like.
作為可以具有由A1 表示之有機基之取代基的例,例如可列舉氟原子、氯原子、溴原子及碘原子等鹵素原子;甲氧基、乙氧基及第三丁氧基等烷氧基;苯氧基及對甲苯氧基等芳氧基;甲氧基羰基及丁氧基羰基等烷氧基羰基;苯氧基羰基等芳氧基羰基;乙醯氧基、丙醯氧基及苯甲醯氧基等醯氧基;乙醯基、苯甲醯基、異丁醯基、丙烯醯基、甲基丙烯醯基及甲氧草醯基等醯基;甲基巰基及第三丁基巰基等烷基巰基;苯基巰基及對甲苯基巰基等芳基巰基;甲基、乙基、第三丁基及十二烷基等烷基;氟化烷基等鹵化烷基;環戊基、環己基、環庚基及金剛烷基等環烷基;苯基、對甲苯基、二甲苯基、枯烯基、萘基、蒽基及菲基等芳基;羥基;羧基;甲醯基;磺基;氰基;烷基胺基羰基;芳基胺基羰基;磺醯胺基;矽烷基;胺基;單烷基胺基;二烷基胺基;芳基胺基;二芳基胺基;硫氧基;或它們的組合。Examples of the substituent which may have an organic group represented by A 1 include halogen atoms such as a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom; and alkoxy groups such as a methoxy group, an ethoxy group, and a third butoxy group. Aryloxy groups such as phenoxy and p-tolyloxy; alkoxycarbonyl groups such as methoxycarbonyl and butoxycarbonyl; aryloxycarbonyl groups such as phenoxycarbonyl; ethoxyl, propyloxy, and Benzyloxy, such as benzyloxy; ethynyl, benzyl, isobutylfluorenyl, acrylfluorenyl, methacryl, and methoxysulfenyl; methylmercapto and tertiary butylmercapto Alkyl mercapto groups; aryl mercapto groups such as phenyl mercapto and p-tolyl mercapto; alkyl groups such as methyl, ethyl, third butyl, and dodecyl; halogenated alkyl groups such as fluorinated alkyl; cyclopentyl, Cycloalkyl groups such as cyclohexyl, cycloheptyl, and adamantyl; aryl groups such as phenyl, p-tolyl, xylyl, cumenyl, naphthyl, anthracenyl, and phenanthryl; hydroxyl; carboxyl; formamyl; Sulfo; cyano; alkylaminocarbonyl; arylaminocarbonyl; sulfoamido; silyl; amino; monoalkylamino; dialkylamino; aryl Group; diaryl group; sulfoxy; or combinations thereof.
L1 表示(m+1)價連結基。作為連結基,並無特別限定,能夠列舉-COO-、-OCO-、-CO-、-O-、-S-、-SO-、-SO2 -、伸烷基(較佳為碳數1~10的直鏈或分支伸烷基)、伸環烷基(較佳為碳數3~10的伸環烷基)、伸烯基(較佳為碳數210的直鏈或分支伸烯基)或將它們連結複數個而成之連結基等。連結基的總碳數是3以下為較佳。連結基是伸烷基、伸環烷基、伸烯基為較佳,直鏈或分支伸烷基為更佳,直鏈伸烷基為進一步較佳,伸乙基或亞甲基為特佳,亞甲基為最佳。L 1 represents a (m + 1) -valent linking group. The linking group is not particularly limited, and examples include -COO-, -OCO-, -CO-, -O-, -S-, -SO-, -SO 2- , and alkylene (preferably having 1 carbon number) ~ 10 straight or branched alkylene), cycloalkyl (preferably a cycloalkyl having 3 to 10 carbon atoms), alkenyl (preferably a linear or branched alkylene having 210 carbon atoms) ) Or a linking base formed by connecting a plurality of them. The total carbon number of the linking group is preferably 3 or less. The linking group is preferably an alkylene group, a cycloalkylene group, an alkylene group, a linear or branched alkylene group is more preferred, a linear alkylene group is further preferred, and an ethylene group or a methylene group is particularly preferred. Methylene is the best.
R1 表示1價有機基。作為1價有機基,可列舉脂肪族基、芳香族基等。關於脂肪族基、芳香族基,可列舉以上述A1 進行說明者。由R1 表示之1價有機基可以具有取代基。作為取代基,可列舉上述者。 R1 是具有羧基之基團為較佳。亦即,R1 是由下述式表示之基團為較佳。 -L2 -(COOH)n 式中,L2 表示(n+1)價連結基,n表示1以上的整數。 關於由L2 表示之連結基,可列舉以上述L1 進行說明之基團,較佳範圍亦相同,伸乙基或亞甲基為特佳,亞甲基為最佳。 n表示1以上的整數,1或2為較佳,1為更佳。n的上限是由L2 表示之連結基可採用之取代基的最大數。若n為1,則藉由200℃以下的加熱,容易產生沸點高的3級胺。進而,能夠提高樹脂組成物的穩定性。R 1 represents a monovalent organic group. Examples of the monovalent organic group include an aliphatic group and an aromatic group. Examples of the aliphatic group and the aromatic group include those described above with reference to A 1 . The monovalent organic group represented by R 1 may have a substituent. Examples of the substituent include the above. R 1 is preferably a group having a carboxyl group. That is, R 1 is preferably a group represented by the following formula. -L 2 - (COOH) n in the formula, L 2 represents a (n + 1) divalent linking group, n represents an integer of 1 or more. Regarding the linking group represented by L 2 , the groups described above with reference to L 1 may be mentioned, and the preferred ranges are also the same. Ethylene or methylene is particularly preferred, and methylene is most preferred. n represents an integer of 1 or more, 1 or 2 is preferable, and 1 is more preferable. The upper limit of n is the maximum number of substituents which can be used for the linking group represented by L 2 . When n is 1, a tertiary amine having a high boiling point is easily generated by heating at 200 ° C or lower. Furthermore, the stability of a resin composition can be improved.
m表示1以上的整數,1或2為較佳,1為更佳。m的上限是由L1 表示之連結基可採用之取代基的最大數。若m為1,則藉由200℃以下的加熱,容易產生沸點高的3級胺。進而,能夠提高樹脂組成物的穩定性。 p表示1以上的整數,1或2為較佳,1為更佳。p的上限是由A1 表示之有機基可採用之取代基的最大數。若p為1,則藉由200℃以下的加熱,容易產生沸點高的3級胺。m represents an integer of 1 or more, 1 or 2 is preferable, and 1 is more preferable. The upper limit of m is the maximum number of substituents that the linking group represented by L 1 can adopt. When m is 1, a tertiary amine having a high boiling point is easily generated by heating at 200 ° C or lower. Furthermore, the stability of a resin composition can be improved. p represents an integer of 1 or more, 1 or 2 is preferable, and 1 is more preferable. The upper limit of p is the maximum number of substituents that can be used for the organic group represented by A 1 . When p is 1, a tertiary amine having a high boiling point is easily generated by heating at 200 ° C or lower.
本發明中,式(A1)表示之化合物是下述式(1a)表示之化合物為較佳。 [化學式36]式(1a)中,A1 表示p價有機基,L1 表示(m+1)價連結基,L2 表示(n+1)價連結基,m表示1以上的整數,n表示1以上的整數,p表示1以上的整數。 通式(1a)的A1 、L1 、L2 、m、n及p的定義與以通式(A1)進行說明之範圍相同,較佳範圍亦相同。In the present invention, the compound represented by the formula (A1) is preferably a compound represented by the following formula (1a). [Chemical Formula 36] In formula (1a), A 1 represents a p-valent organic group, L 1 represents a (m + 1) -valent linking group, L 2 represents a (n + 1) -valent linking group, m represents an integer of 1 or more, and n represents an integer of 1 or more. Integer, p represents an integer of 1 or more. The definitions of A 1 , L 1 , L 2 , m, n, and p in the general formula (1a) are the same as those described in the general formula (A1), and the preferable ranges are also the same.
本發明中,由式(A1)表示之化合物是N-芳基亞胺基二乙酸為較佳。N-芳基亞胺基二乙酸是通式(A1)中的A1 為芳香族基,L1 及L2 為亞甲基,m為1,n為1,p為1之化合物。N-芳基亞胺基二乙酸於120~200℃下,容易產生沸點高的3級胺。In the present invention, it is preferable that the compound represented by the formula (A1) is N-aryliminodiacetic acid. N-aryliminodiacetic acid is a compound in which A 1 is an aromatic group, L 1 and L 2 are methylene groups, m is 1, n is 1, and p is 1 in the general formula (A1). N-aryliminodiacetic acid easily produces tertiary amines with a high boiling point at 120-200 ° C.
以下,記載熱鹼產生劑的具體例,但本發明並不限定於此。該些可以能夠分別單獨使用或混合使用兩種以上。以下 式中的Me表示甲基。以下所示之化合物中的(A-1)~(A-11)、(A-18)、(A-19)是由上述式(A1)表示之化合物。以下所示之化合物中,(A-1)~(A-11)、(A-18)~(A-26)為更佳,(A-1)~(A-9)、(A-18)~(A-21)、(A-23)、(A-24)為進一步較佳。Hereinafter, specific examples of the hot alkali generator are described, but the present invention is not limited thereto. These may be used individually or in mixture of 2 or more types. Me in the following formula represents a methyl group. Among the compounds shown below, (A-1) to (A-11), (A-18), and (A-19) are compounds represented by the above formula (A1). Among the compounds shown below, (A-1) to (A-11), (A-18) to (A-26) are more preferable, and (A-1) to (A-9), (A-18) ) ~ (A-21), (A-23), (A-24) are further preferred.
[表1]
[表2]
作為本發明中所使用之熱鹼產生劑,還可較佳地使用日本專利申請2015-034388號說明書的0015~0055段中所記載之化合物,並將該些內容編入本說明書中。As the hot alkali generator used in the present invention, the compounds described in paragraphs 0015 to 0055 of the specification of Japanese Patent Application No. 2015-034388 can also be preferably used and incorporated into this specification.
當使用熱鹼產生劑時,樹脂組成物中的熱鹼產生劑的含量相對於樹脂組成物的總固體成分是0.1~50質量%為較佳。下限是0.5質量%以上為更佳,1質量%以上為進一步較佳。上限是30質量%以下為更佳,20質量%以下為進一步較佳。 熱鹼產生劑能夠使用一種或兩種以上。當使用兩種以上時,合計量是上述範圍為較佳。When a hot alkali generator is used, the content of the hot alkali generator in the resin composition is preferably 0.1 to 50% by mass based on the total solid content of the resin composition. The lower limit is more preferably 0.5% by mass or more, and more preferably 1% by mass or more. The upper limit is more preferably 30% by mass or less, and more preferably 20% by mass or less. As the hot alkali generator, one kind or two or more kinds can be used. When two or more kinds are used, the total amount is preferably in the above range.
<<熱自由基聚合起始劑>> 本發明中的樹脂組成物可以包含熱自由基聚合起始劑。作為熱自由基聚合起始劑,能夠使用公知的熱自由基聚合起始劑。熱自由基聚合起始劑是藉由熱能而產生自由基,且引發或促進聚合性化合物的聚合反應之化合物。藉由添加熱自由基聚合起始劑,於進行聚醯亞胺前驅物的環化反應時,能夠進行聚合性化合物等的聚合反應。又,當聚醯亞胺前驅物包含自由基聚合性基時,能夠與聚醯亞胺前驅物的環化同時進行聚醯亞胺前驅物的聚合反應,因此能夠實現更高的耐熱化。 作為熱自由基聚合起始劑,可列舉芳香族酮類、鎓鹽化合物、過氧化物、硫化合物、六芳基聯咪唑化合物、酮肟酯化合物、硼酸鹽化合物、吖嗪鎓化合物、茂金屬化合物、活性酯化合物、具有碳鹵素鍵之化合物、偶氮類化合物等。其中,過氧化物或偶氮類化合物為更佳,過氧化物為特佳。 本發明中所使用之熱自由基聚合起始劑的10小時半衰期溫度是90~130℃為較佳,100~120℃為更佳。 具體而言,可列舉日本特開2008-63554號公報的0074~0118段中所記載之化合物。 市售品中,能夠較佳地使用PERBUTYL Z及PERCUMYL D(NOF CORPORATION.製)。<<< Thermal radical polymerization initiator> The resin composition in this invention may contain a thermal radical polymerization initiator. As the thermal radical polymerization initiator, a known thermal radical polymerization initiator can be used. A thermal radical polymerization initiator is a compound that generates radicals by thermal energy and initiates or accelerates a polymerization reaction of a polymerizable compound. By adding a thermal radical polymerization initiator, when a cyclization reaction of a polyimide precursor is performed, a polymerization reaction such as a polymerizable compound can be performed. When the polyfluorene imide precursor contains a radical polymerizable group, the polymerization reaction of the polyfluorene imide precursor can be performed simultaneously with the cyclization of the polyfluorene imide precursor, and therefore, higher heat resistance can be achieved. Examples of the thermal radical polymerization initiator include aromatic ketones, onium salt compounds, peroxides, sulfur compounds, hexaarylbiimidazole compounds, ketoxime ester compounds, borate compounds, azineium compounds, and metallocenes Compounds, active ester compounds, compounds having carbon-halogen bonds, azo compounds, and the like. Among them, a peroxide or an azo compound is more preferable, and a peroxide is particularly preferable. The 10-hour half-life temperature of the thermal radical polymerization initiator used in the present invention is preferably 90 to 130 ° C, and more preferably 100 to 120 ° C. Specifically, the compounds described in paragraphs 0074 to 0118 of Japanese Patent Application Laid-Open No. 2008-63554 can be cited. Among commercially available products, PERBUTYL Z and PERCUMYL D (manufactured by NOF CORPORATION.) Can be preferably used.
當樹脂組成物含有熱自由基聚合起始劑時,熱自由基聚合起始劑的含量相對於樹脂組成物的總固體成分是0.1~50質量%為較佳,0.1~30質量%為更佳,0.1~20質量%為特佳。又,相對於聚合性化合物100質量份,包含0.1~50質量份的熱自由基聚合起始劑為較佳,包含0.5~30質量份為更佳。依該態樣,容易形成耐熱性更優異之硬化膜。熱自由基聚合起始劑可以是僅一種,亦可以是兩種以上。當熱自由基聚合起始劑為兩種以上時,其合計是上述範圍為較佳。When the resin composition contains a thermal radical polymerization initiator, the content of the thermal radical polymerization initiator relative to the total solid content of the resin composition is preferably 0.1 to 50% by mass, and more preferably 0.1 to 30% by mass. 0.1 to 20% by mass is particularly preferred. The thermal radical polymerization initiator is preferably contained in an amount of 0.1 to 50 parts by mass based on 100 parts by mass of the polymerizable compound, and more preferably contained in an amount of 0.5 to 30 parts by mass. According to this aspect, a cured film having more excellent heat resistance is easily formed. The thermal radical polymerization initiator may be only one kind, or two or more kinds. When there are two or more types of thermal radical polymerization initiators, the total is preferably in the above range.
<<防鏽劑>> 本發明中的樹脂組成物中含有防鏽劑為較佳。樹脂組成物包含防鏽劑,藉此能夠有效地抑制劑源自金屬層(金屬配線)的金屬離子向樹脂組成物層內移動。作為防鏽劑,能夠使用日本特開2013-15701號公報的0094段中所記載之防鏽劑、日本特開2009-283711號公報的0073~0076段中所記載之化合物、日本特開2011-59656號公報的0052段中所記載之化合物、日本特開2012-194520號公報的0114、0116及0118段中所記載之化合物等。具體而言,可列舉具有雜環(吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡唑環、異噁唑環、異噻唑環、四唑環、吡啶環、噠嗪環、嘧啶環、吡嗪環、哌啶環、哌嗪環、嗎啉環、2H-吡喃環及6H-吡喃環、三嗪環)之化合物、具有硫脲類及巰基之化合物、受阻酚類化合物、水楊酸衍生物類化合物、醯肼衍生物類化合物。其中,三唑、苯并三唑等三唑類化合物、四唑、苯并四唑等四唑類化合物為較佳,1,2,4-三唑、1,2,3-苯并三唑、5-甲基-1H-苯并三唑、1H-四唑、5-甲基-1H-四唑、5-苯基-1H-四唑為更佳,1H-四唑為最佳。作為市售品,可列舉KEMITEC BT-C(CHEMIPRO KASEI KAISHA, LTD製,1,2,3-苯并三唑)、1HT(TOYOBO CO., LTD.製,1H-四唑)、P5T(TOYOBO CO., LTD.製、5-苯基-1H-四唑)等。<<< Antirust agent> It is preferable that the resin composition in this invention contains an antirust agent. The resin composition contains a rust inhibitor, thereby effectively inhibiting metal ions originating from the metal layer (metal wiring) from moving into the resin composition layer. As the rust inhibitor, the rust inhibitor described in paragraph 0094 of Japanese Patent Application Laid-Open No. 2013-15701, the compound described in paragraphs 0073 to 0076 of Japanese Patent Application Laid-Open No. 2009-283711, and Japanese Patent Application Laid-Open No. 2011- Compounds described in paragraph 0052 of Japanese Patent No. 59656, compounds described in paragraphs 0114, 0116, and 0118 of Japanese Patent Application Laid-Open No. 2012-194520. Specific examples include a heterocyclic ring (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole ring, pyridine ring, pyridine). Compounds such as hydrazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring and 6H-pyran ring, triazine ring), compounds having thioureas and thiols, Hindered phenolic compounds, salicylic acid derivative compounds, hydrazine derivative compounds. Among them, triazole compounds such as triazole and benzotriazole, and tetrazole compounds such as tetrazole and benzotetrazole are preferred, and 1,2,4-triazole and 1,2,3-benzotriazole 5-methyl-1H-benzotriazole, 1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole are more preferred, and 1H-tetrazole is most preferred. Examples of commercially available products include KEMITEC BT-C (made by CHEMIPRO KASEI KAISHA, LTD, 1,2,3-benzotriazole), 1HT (made by TOYOBO CO., LTD., 1H-tetrazole), P5T (TOYOBO CO., LTD., 5-phenyl-1H-tetrazole).
當樹脂組成物含有防鏽劑時,防鏽劑的含量相對於樹脂100質量份是0.1~10質量份為較佳,0.2~5質量份為更佳。防鏽劑可以是僅一種,亦可以是兩種以上。當使用兩種以上時,其合計是上述範圍為較佳。When the resin composition contains a rust inhibitor, the content of the rust inhibitor is preferably 0.1 to 10 parts by mass relative to 100 parts by mass of the resin, and more preferably 0.2 to 5 parts by mass. The rust inhibitor may be only one kind, or two or more kinds. When two or more kinds are used, it is preferable that the total is within the above range.
<<矽烷偶合劑> 本發明中的樹脂組成物可以包含用於提高與電極或配線等中共之金屬材料的黏接性之矽烷偶合劑為較佳。作為矽烷偶合劑的例,可列舉日本特開2014-191002號公報的0062~0073段中所記載之化合物、國際公開WO2011/080992A1號的0063~0071段中所記載之化合物、日本特開2014-191252號公報的0060~0061段中所記載之化合物、日本特開2014-41264號公報的0045~0052段中所記載之化合物、國際公開WO2014/097594號的0055段中所記載之化合物。又,如日本特開2011-128358號公報的0050~0058段中所記載,使用不同的兩種以上的矽烷偶合劑亦為較佳。又,矽烷偶合劑使用2-((3-(三乙氧基甲矽烷基)丙基)胺基甲醯基)苯甲酸、三乙氧基甲矽烷基丙基馬來醯胺酸、下述化合物亦為較佳。以下的式中,Et表示乙基。作為市售品,還能夠使用KBM-602(Shin-Etsu Chemical Co., Ltd.製、N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷)等。 [化學式37] << Silane coupling agent It is preferable that the resin composition in the present invention may contain a silane coupling agent for improving the adhesion with a metal material such as an electrode or wiring. Examples of the silane coupling agent include compounds described in paragraphs 0061 to 0073 of Japanese Patent Application Publication No. 2014-191002, compounds described in paragraphs 0063 to 0071 of International Publication WO2011 / 080992A1, and Japanese Patent Application Laid-Open No. 2014- The compounds described in paragraphs 0060 to 0061 of 191252, the compounds described in paragraphs 0045 to 0052 of Japanese Patent Application Laid-Open No. 2014-41264, and the compounds described in paragraph 0055 of international publication WO2014 / 097594. As described in paragraphs 0050 to 0058 of Japanese Patent Application Laid-Open No. 2011-128358, it is also preferable to use two or more different silane coupling agents. As the silane coupling agent, 2-((3- (triethoxysilyl) propyl) aminomethylamidino) benzoic acid, triethoxysilylpropylmaleic acid, and the following Compounds are also preferred. In the following formula, Et represents an ethyl group. As a commercially available product, KBM-602 (manufactured by Shin-Etsu Chemical Co., Ltd., N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane) and the like can also be used. [Chemical Formula 37]
矽烷偶合劑相對於樹脂100質量份,較佳為0.1~30質量份,進一步較佳為0.5~15質量份的範圍。藉由將矽烷偶合劑的含量設為0.1質量份以上,與可得到之膜的金屬層的黏接性變良好,且藉由將矽烷偶合劑的含量設為30質量份以下,與可得到之膜的耐熱性、力學特性變良好。矽烷偶合劑可以是僅一種,亦可以是兩種以上。當使用兩種以上時,其合計是上述範圍為較佳。The silane coupling agent is preferably in the range of 0.1 to 30 parts by mass, and more preferably in the range of 0.5 to 15 parts by mass based on 100 parts by mass of the resin. By setting the content of the silane coupling agent to 0.1 parts by mass or more, the adhesion with the metal layer of the obtainable film becomes good, and by setting the content of the silane coupling agent to 30 parts by mass or less, and The film has good heat resistance and mechanical properties. The silane coupling agent may be only one kind, or two or more kinds. When two or more kinds are used, it is preferable that the total is within the above range.
<<溶劑>> 本發明中,當藉由塗佈而將樹脂組成物形成為層狀時,對樹脂組成物調合溶劑為較佳。作為溶劑,能夠任意使用公知的溶劑。例如,可列舉酯類、醚類、酮類、芳香族烴類、亞碸類等化合物。 作為酯類,例如進而較佳地列舉乙酸乙酯、乙酸-正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯、ε-己內酯、δ-戊內酯、烷氧基乙酸烷基酯(例如,烷氧基乙酸甲酯、烷氧基乙酸乙酯、烷氧基乙酸丁酯(例如,甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷氧基丙酸烷基酯類(例如,3-烷氧基丙酸甲酯、3-烷氧基丙酸乙酯等(例如,3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷氧基丙酸烷基酯類(例如,2-烷氧基丙酸甲酯、2-烷氧基丙酸乙酯、2-烷氧基丙酸丙酯等(例如,2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷氧基-2-甲基丙酸甲酯及2-烷氧基-2-甲基丙酸乙酯(例如,2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯等。 作為醚類,例如可較佳地列舉二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等。 作為酮類,例如可較佳地列舉甲基乙基酮、環己酮、環戊酮、2-庚酮、3-庚酮、N-甲基-2-吡咯啶酮等。 作為芳香族烴類,例如可較佳地列舉甲苯、二甲苯、苯甲醚、檸檬烯等。 作為亞碸類,可較佳地列舉二甲基亞碸。<< Solvent> In the present invention, when the resin composition is formed into a layer by coating, it is preferable to mix the solvent with the resin composition. As the solvent, a known solvent can be arbitrarily used. Examples include compounds such as esters, ethers, ketones, aromatic hydrocarbons, and fluorenes. Examples of the esters include ethyl acetate, n-butyl acetate, isobutyl acetate, pentyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, and the like. Butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyl alkoxyacetate (eg, methyl alkoxyacetate, alkoxy Ethyl acetate, butyl alkoxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.) ), Alkyl 3-alkoxypropionates (e.g., methyl 3-alkoxypropionate, ethyl 3-alkoxypropionate, etc. (e.g., methyl 3-methoxypropionate, 3 -Ethyl methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), alkyl 2-alkoxypropionates (for example, 2-alkoxy Methyl propionate, ethyl 2-alkoxypropionate, propyl 2-alkoxypropionate, etc. (for example, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, 2 -Propyl methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), 2- Methyloxy-2-methylpropanoate and ethyl 2-alkoxy-2-methylpropanoate (eg, methyl 2-methoxy-2-methylpropionate, 2-ethoxy- 2-methyl propionate, etc.), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetate, ethyl acetate, methyl 2-oxobutanoate, 2-oxo On behalf of ethyl butyrate. Examples of the ethers include diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, and ethyl cellosolve acetate. , Diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate Esters, etc. Examples of the ketones include methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, and N-methyl-2-pyrrolidone. Examples of the aromatic hydrocarbons include toluene, xylene, anisole, and limonene. As a fluorene, a dimethyl sulfene is mentioned suitably.
從塗佈面性狀的改良等的觀點考慮,將兩種以上的溶劑混合之形態亦為較佳。其中,由選自3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、環戊酮、γ-丁內酯、二甲基亞碸、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚及丙二醇甲醚乙酸酯中之兩種以上構成之混合溶液為較佳。同時使用二甲基亞碸與γ-丁內酯為特佳。From the viewpoint of improving the properties of the coating surface, a form in which two or more solvents are mixed is also preferable. Among them, selected from the group consisting of methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, Methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, dimethylsulfinium, ethylcarbitol acetate, butylcarbitol ethyl A mixed solution composed of two or more of an acid ester, propylene glycol methyl ether, and propylene glycol methyl ether acetate is preferable. It is particularly preferable to use dimethyl sulfene and γ-butyrolactone together.
當樹脂組成物具有溶劑時,從塗佈性的觀點考慮,將溶劑的含量設為樹脂組成物的總固體成分濃度成為5~80質量%之量為較佳,5~70質量%為進一步較佳,10~60質量%為特佳。溶劑含量藉由所希望的厚度和塗佈方法調節即可。例如若塗佈方法為旋轉塗佈法或狹縫塗佈法,則成為上述範圍的固體成分濃度之溶劑的含量為較佳。若為噴塗法,則設為成為0.1質量%~50質量%之量為較佳,設為成為1.0質量%~25質量%之量為更佳。藉由塗佈方法調節溶劑量,藉此能夠均勻地形成所希望的厚度的樹脂組成物層。 溶劑可以是僅一種,亦可以是兩種以上。當溶劑為兩種以上時,其合計是上述範圍為較佳。 又,從膜強度的觀點考慮,N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N,N-二甲基乙醯胺及N,N-二甲基甲醯胺的含量相對於樹脂組成物的總質量小於5質量%為較佳,小於1質量%為更佳,小於0.5質量%為進一步較佳,小於0.1質量%為進一步較佳。When the resin composition has a solvent, from the viewpoint of coating properties, it is preferable to set the content of the solvent to a total solid content concentration of the resin composition of 5 to 80% by mass, and more preferably 5 to 70% by mass. 10 to 60% by mass is particularly good. The solvent content may be adjusted by the desired thickness and coating method. For example, if the coating method is a spin coating method or a slit coating method, the content of the solvent having a solid content concentration in the above range is preferred. In the case of the spray coating method, the amount is preferably 0.1 to 50% by mass, and the amount is more preferably 1.0 to 25% by mass. By adjusting the amount of the solvent by the coating method, a resin composition layer having a desired thickness can be uniformly formed. The solvent may be only one kind, or two or more kinds. When there are two or more solvents, the total is preferably in the above range. From the viewpoint of film strength, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N, N-dimethylacetamide, and N, N-dimethylformamide The content of amidine is preferably less than 5% by mass, more preferably less than 1% by mass, even more preferably less than 0.5% by mass, and even more preferably less than 0.1% by mass.
<<增感色素>> 本發明中的樹脂組成物可以包含增感色素。增感色素吸收特定的活性放射線而成為電子激發狀態。成為電子激發狀態之增感色素與熱鹼產生劑、光鹼產生劑、熱自由基聚合起始劑、光聚合起始劑等接觸而產生電子轉移、能量轉移、發熱等作用。藉此,熱鹼產生劑、光鹼產生劑、熱自由基聚合起始劑、光聚合起始劑發生化學變化而分解,並生成自由基、酸或鹼。關於增感色素的詳細內容,能夠參閱日本特開2016-027357號公報的0161~0163段的記載,並將該內容編入本說明書中。當樹脂組成物包含增感色素時,增感色素的含量相對於樹脂組成物的總固體成分是0.01~20質量%為較佳,0.1~15質量%為更佳,0.5~10質量%為進一步較佳。增感色素可以單獨使用一種,亦可以同時使用兩種以上。<<< Sensitizing dye> The resin composition in this invention may contain a sensitizing dye. The sensitizing dye absorbs a specific active radiation and becomes an electronically excited state. The sensitized dye in an electronically excited state is brought into contact with a thermal alkali generator, a photobase generator, a thermal radical polymerization initiator, a photopolymerization initiator, and the like to generate effects such as electron transfer, energy transfer, and heat generation. Thereby, the thermal base generator, the photobase generator, the thermal radical polymerization initiator, and the photopolymerization initiator undergo chemical changes to decompose, and generate radicals, acids, or bases. For details of the sensitizing dye, refer to the descriptions in paragraphs 0161 to 0163 of Japanese Patent Application Laid-Open No. 2016-027357, and incorporate the contents into this specification. When the resin composition contains a sensitizing dye, the content of the sensitizing dye is preferably 0.01 to 20% by mass relative to the total solid content of the resin composition, more preferably 0.1 to 15% by mass, and further 0.5 to 10% by mass. Better. The sensitizing dye may be used singly or in combination of two or more kinds.
<<鏈轉移劑>> 本發明中的樹脂組成物可以含有鏈轉移劑。鏈轉移劑例如於高分子辭典第三版(高分子學會(The Society of Polymer Science, Japan)編,2005年)683-684頁中被定義。作為鏈轉移劑,例如使用於分子內具有SH、PH、SiH、GeH之化合物組。該些向低活性自由基種供給氫而生成自由基,或者經氧化之後,藉由去質子而可生成自由基。尤其,能夠較佳地使用硫醇化合物(例如,2-巰基苯并咪唑類、2-巰基苯并噻唑類、2-巰基苯并噁唑類、3-巰基三唑類、5-巰基四唑類等)。當樹脂組成物含有鏈轉移劑時,鏈轉移劑的含量相對於樹脂組成物的總固體成分100質量份,較佳為0.01~20質量份,更佳為1~10質量份,進一步較佳為1~5質量份。鏈轉移劑可以是僅一種,亦可以是兩種以上。當鏈轉移劑為兩種以上時,其合計是上述範圍為較佳。<< chain transfer agent >> The resin composition in the present invention may contain a chain transfer agent. Chain transfer agents are defined, for example, in the third edition of the Polymer Dictionary (edited by The Society of Polymer Science, Japan, 2005) pages 683-684. As the chain transfer agent, for example, a compound group having SH, PH, SiH, and GeH in a molecule is used. These can generate free radicals by supplying hydrogen to low-active radical species, or can generate free radicals by deprotonation after oxidation. In particular, thiol compounds (for example, 2-mercaptobenzimidazoles, 2-mercaptobenzothiazoles, 2-mercaptobenzoxazoles, 3-mercaptotriazoles, 5-mercaptotetrazoles) can be preferably used. Class, etc.). When the resin composition contains a chain transfer agent, the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, more preferably 1 to 10 parts by mass, and more preferably 100 parts by mass relative to the total solid content of the resin composition. 1 to 5 parts by mass. The chain transfer agent may be only one kind, or two or more kinds. When there are two or more kinds of chain transfer agents, it is preferable that the total thereof is in the above range.
<<界面活性劑>> 從提高塗佈性的觀點考慮,本發明的樹脂組成物中亦可以添加各種界面活性劑。作為界面活性劑,能夠使用氟類界面活性劑、非離子類界面活性劑、陽離子類界面活性劑、陰離子類界面活性劑、矽酮類界面活性劑等各種界面活性劑。又,下述界面活性劑亦為較佳。 [化學式38] <<<Surfactant> From the viewpoint of improving the coating property, various surfactants may be added to the resin composition of the present invention. As the surfactant, various surfactants such as a fluorine-based surfactant, a non-ionic surfactant, a cationic surfactant, an anionic surfactant, and a silicone-based surfactant can be used. The following surfactants are also preferred. [Chemical Formula 38]
當樹脂組成物含有界面活性劑時,界面活性劑的含量相對於樹脂組成物的總固體成分是0.001~2.0質量%為較佳,更佳為0.005~1.0質量%。界面活性劑可以是僅一種,亦可以是兩種以上。當含有兩種以上的界面活性劑時,其合計是上述範圍為較佳。When the resin composition contains a surfactant, the content of the surfactant relative to the total solid content of the resin composition is preferably 0.001 to 2.0% by mass, and more preferably 0.005 to 1.0% by mass. The surfactant may be only one kind, or two or more kinds. When two or more kinds of surfactants are contained, the total thereof is preferably in the above range.
<<高級脂肪酸衍生物>> 為了防止因氧引起之聚合阻礙,本發明的樹脂組成物中可以添加如二十二酸或二十二酸醯胺那樣的高級脂肪酸衍生物而於塗佈後的乾燥過程中局部存在於組成物的表面。當樹脂組成物具有高級脂肪酸衍生物時,高級脂肪酸衍生物的含量相對於樹脂組成物的總固體成分是0.1~10質量%為較佳。高級脂肪酸衍生物可以是僅為一種,亦可以是兩種以上。當高級脂肪酸衍生物為兩種以上時,其合計是上述範圍為較佳。<< Higher Fatty Acid Derivatives> In order to prevent polymerization from being hindered by oxygen, a higher fatty acid derivative such as behenic acid or ammonium behenate can be added to the resin composition of the present invention after coating. Localized on the surface of the composition during drying. When the resin composition has a higher fatty acid derivative, the content of the higher fatty acid derivative is preferably 0.1 to 10% by mass based on the total solid content of the resin composition. The higher fatty acid derivative may be only one type, or two or more types. When there are two or more types of higher fatty acid derivatives, the total is preferably in the above range.
<<其他添加劑>> 於不損害本發明的效果之範圍內,本發明中的樹脂組成物能夠依需要而調合各種添加物,例如,無機粒子、硬化劑、硬化觸媒、填充劑、抗氧化劑、紫外線吸收劑、抗凝聚劑等。當調合該些添加劑時,其合計調合量是樹脂組成物的固體成分的3質量%以下為較佳。<< Other additives >> As long as the effect of the present invention is not impaired, the resin composition in the present invention can be blended with various additives as required, for example, inorganic particles, hardeners, hardening catalysts, fillers, and antioxidants. , UV absorber, anti-agglomerating agent, etc. When these additives are blended, the total blended amount is preferably 3% by mass or less of the solid content of the resin composition.
<<<關於其他含有物質的限制>>> 從塗佈面性狀的觀點考慮,本發明中的樹脂組成物的水分含量小於5質量%為較佳,小於1質量%為進一步較佳,小於0.6質量%為特佳。<<< Restrictions on Other Contained Substances >> From the viewpoint of the properties of the coated surface, the moisture content of the resin composition in the present invention is preferably less than 5 mass%, and less than 1 mass% is more preferably, less than 0.6. The mass% is particularly good.
從絕緣性的觀點考慮,本發明中的樹脂組成物的金屬含量小於5質量ppm(parts per million(百萬分率))為較佳,小於1質量ppm為進一步較佳,小於0.5質量ppm為特佳。作為金屬,可列舉鈉、鉀、鎂、鈣、鐵、鉻、鎳等。當包含複數種金屬時,該些金屬的合計為上述範圍為較佳。 又,作為減少無意中包含於樹脂組成物之金屬雜質之方法,能夠列舉作為構成樹脂組成物之原料而選擇金屬含量較少的原料,對構成本發明的組成物之原料進行過濾器過濾,用聚四氟乙烯等對裝置內進行內襯而於盡可能抑制了污染之條件下進行蒸餾等方法。From the viewpoint of insulation, the metal content of the resin composition in the present invention is preferably less than 5 mass ppm (parts per million), more preferably less than 1 mass ppm, and less than 0.5 mass ppm. Extraordinary. Examples of the metal include sodium, potassium, magnesium, calcium, iron, chromium, and nickel. When a plurality of metals are included, the total of these metals is preferably in the above range. In addition, as a method for reducing the metal impurities inadvertently contained in the resin composition, a raw material having a small metal content can be selected as a raw material constituting the resin composition, and the raw material constituting the composition of the present invention is filtered with Polytetrafluoroethylene and other methods are used to line the inside of the device and perform distillation under conditions that minimize contamination.
從配線腐蝕性的觀點考慮,本發明的樹脂組成物中,鹵素原子的含量小於500質量ppm為較佳,小於300質量ppm為更佳,小於200質量ppm為特佳。其中,以鹵素離子的狀態存在者是小於5質量ppm為較佳,小於1質量ppm為更佳,小於0.5質量ppm為特佳。作為鹵素原子,可列舉氯原子及溴原子。氯原子及溴原子或氯化物離子及溴化物離子的合計分別為上述範圍為較佳。From the viewpoint of wiring corrosion, the resin composition of the present invention preferably has a halogen atom content of less than 500 mass ppm, more preferably less than 300 mass ppm, and particularly preferably less than 200 mass ppm. Among them, the presence of halogen ions is preferably less than 5 mass ppm, more preferably less than 1 mass ppm, and particularly preferably less than 0.5 mass ppm. Examples of the halogen atom include a chlorine atom and a bromine atom. It is preferable that the total of a chlorine atom and a bromine atom, or a chloride ion and a bromide ion are in the above-mentioned ranges, respectively.
<樹脂組成物的製備> 樹脂組成物能夠藉由混合上述各成分而製備。混合方法並無特別限定,能夠藉由以往公知的方法來進行。 又,以去除樹脂組成物中的垃圾或微粒等異物為目的,進行使用過濾器之過濾為較佳。過濾器孔徑是1μm以下為較佳,0.5μm以下為更佳,0.1μm以下為進一步較佳。過濾器的材質是聚四氟乙烯、聚乙烯或尼龍為較佳。過濾器可以使用用有機溶劑預先清洗者。過濾器的過濾製程中,可以並聯或串聯複數種過濾器而使用。當使用複數種過濾器時,可以組合使用孔徑和/或材質不同之過濾器。又,可以對各種材料進行複數次過濾。當進行複數次過濾時,可以是循環過濾。又,可以於加壓之後進行過濾。當於加壓之後進行過濾時,進行加壓之壓力是0.05MPa以上且0.3MPa以下為較佳。 除了使用過濾器之過濾以外,還可以進行使用了吸附材料之雜質去除處理。還可以組合過濾器過濾和使用了吸附材料之雜質去除處理。作為吸附材料,能夠使用公知的吸附材料。例如,可列舉矽膠、沸石等無機類吸附材料、活性碳等有機類吸附材料。<Preparation of resin composition> A resin composition can be prepared by mixing each said component. The mixing method is not particularly limited, and can be performed by a conventionally known method. In addition, for the purpose of removing foreign matters such as garbage and particles in the resin composition, it is preferable to perform filtration using a filter. The filter pore size is preferably 1 μm or less, more preferably 0.5 μm or less, and even more preferably 0.1 μm or less. The material of the filter is preferably polytetrafluoroethylene, polyethylene or nylon. The filter may be previously cleaned with an organic solvent. In the filtration process of the filter, a plurality of filters can be used in parallel or in series. When multiple filters are used, filters with different pore sizes and / or materials can be used in combination. In addition, various materials can be filtered multiple times. When the filtering is performed a plurality of times, the filtering may be circular. In addition, filtration may be performed after pressurization. When the filtration is performed after the pressurization, the pressure for pressurizing is preferably 0.05 MPa or more and 0.3 MPa or less. In addition to filtration using a filter, impurity removal treatment using an adsorbent can also be performed. It is also possible to combine a filter and an impurity removal treatment using an adsorbent. As the adsorbent, a known adsorbent can be used. Examples include inorganic adsorbents such as silica gel and zeolites, and organic adsorbents such as activated carbon.
<電子元件> 接著,對應用本發明的積層體的製造方法而得到之電子元件的一實施形態進行說明。圖2所示之電子元件100是所謂的3維安裝裝置,且積層有複數個半導體元件(半導體晶片)101a~101d之積層體101配置於配線基板120上。此外,該實施形態中,主要對半導體元件(半導體晶片)的積層數為4層之情況進行說明,但半導體元件(半導體晶片)的積層數並無特別限定,例如可以是2層、8層、16層、32層等。又,可以是1層。<Electronic component> Next, an embodiment of an electronic component obtained by applying the method for manufacturing a laminated body of the present invention will be described. The electronic component 100 shown in FIG. 2 is a so-called three-dimensional mounting device, and a multilayer body 101 in which a plurality of semiconductor elements (semiconductor wafers) 101 a to 101 d are stacked is arranged on a wiring substrate 120. In addition, in this embodiment, a case where the number of stacked layers of a semiconductor element (semiconductor wafer) is mainly described will be described. However, the number of stacked layers of a semiconductor element (semiconductor wafer) is not particularly limited. 16 floors, 32 floors, etc. It may be one floor.
複數個半導體元件101a~101d均包含矽基板等半導體晶圓。 最上段的半導體元件101a不具有貫通電極,且於其一方的面形成有電極焊盤(未圖示)。 半導體元件101b~101d具有貫通電極102b~102d,且於各半導體元件的兩面設置有一體設置於貫通電極之連接焊盤(未圖示)。Each of the plurality of semiconductor elements 101a to 101d includes a semiconductor wafer such as a silicon substrate. The uppermost semiconductor element 101a does not have a through electrode, and an electrode pad (not shown) is formed on one surface thereof. The semiconductor elements 101b to 101d have through electrodes 102b to 102d, and connection pads (not shown) integrally provided on the through electrodes are provided on both surfaces of each semiconductor element.
積層體101具有對不具有貫通電極之半導體元件101a和具有貫通電極102b~102d之半導體元件101b~101d進行倒裝晶片接合之結構。 亦即,不具有貫通電極之半導體元件101a的電極焊盤和與其相鄰之具有貫通電極102b之半導體元件101b的半導體元件101a側的連接焊盤藉由焊料凸塊等金屬凸塊103a而連接,且具有貫通電極102b之半導體元件101b的另一側的連接焊盤和與其相鄰之具有貫通電極102c之半導體元件101c的半導體元件101b側的連接焊盤藉由焊料凸塊等金屬凸塊103b而連接。同樣地,具有貫通電極102c之半導體元件101c的另一側的連接焊盤和與其相鄰之具有貫通電極102d之半導體元件101d的半導體元件101c側的連接焊盤藉由焊料凸塊等金屬凸塊103c而連接。The laminated body 101 has a structure of flip-chip bonding a semiconductor element 101a without a through electrode and semiconductor elements 101b to 101d with a through electrode 102b to 102d. That is, the electrode pad of the semiconductor element 101a without a through electrode and the connection pad on the semiconductor element 101a side of the semiconductor element 101b with a through electrode 102b adjacent thereto are connected by a metal bump 103a such as a solder bump. The connection pad on the other side of the semiconductor element 101b having the through electrode 102b and the connection pad on the semiconductor element 101b side of the semiconductor element 101c having the through electrode 102c adjacent to the connection pad are formed by a metal bump 103b such as a solder bump. connection. Similarly, the connection pads on the other side of the semiconductor element 101c having the through electrode 102c and the connection pads on the semiconductor element 101c side of the semiconductor element 101d having the through electrode 102d adjacent thereto are connected by metal bumps such as solder bumps. 103c and connected.
於各半導體元件101a~101d的間隙中形成有底部填充層110,且經由底部填充層110而積層有各半導體元件101a~101d。An underfill layer 110 is formed in a gap between each of the semiconductor elements 101a to 101d, and each of the semiconductor elements 101a to 101d is laminated via the underfill layer 110.
積層體101積層在配線基板120上。 作為配線基板120,例如使用將樹脂基板、陶瓷基板、玻璃基板等絕緣基板用作基材之複數層配線基板。作為應用樹脂基板之配線基板120,可列舉複數層覆銅積層板(複數層印刷配線板)等。The laminated body 101 is laminated on the wiring substrate 120. As the wiring substrate 120, for example, a plurality of layers of wiring substrates using an insulating substrate such as a resin substrate, a ceramic substrate, or a glass substrate as a base material are used. Examples of the wiring substrate 120 to which the resin substrate is applied include a plurality of copper-clad laminated boards (multilayer printed wiring boards) and the like.
於配線基板120的一面中設置有表面電極120a。 於配線基板120與積層體101之間配置有形成有再配線層105之絕緣層115,配線基板120與積層體101經由再配線層105而電連接。絕緣層115為利用本發明的積層體的製造方法而形成者。絕緣層115可以是如圖1所示那樣的複數層配線結構。 再配線層105的一端經由焊料凸塊等金屬凸塊103d與形成在半導體元件101d的再配線層105側的面之電極焊盤連接。又,再配線層105的另一端經由焊料凸塊等金屬凸塊103e與配線基板的表面電極120a連接。 進而,於絕緣層115與積層體101之間形成有底部填充層110a。又,於絕緣層115與配線基板120之間形成有底部填充層110b。A surface electrode 120 a is provided on one surface of the wiring substrate 120. An insulating layer 115 on which the redistribution layer 105 is formed is arranged between the wiring substrate 120 and the multilayer body 101, and the wiring substrate 120 and the multilayer body 101 are electrically connected via the redistribution layer 105. The insulating layer 115 is formed by a method for manufacturing a laminated body according to the present invention. The insulating layer 115 may have a plurality of layers of wiring structures as shown in FIG. 1. One end of the redistribution layer 105 is connected to an electrode pad formed on a surface of the redistribution layer 105 side of the semiconductor element 101d via a metal bump 103d such as a solder bump. The other end of the redistribution layer 105 is connected to the surface electrode 120a of the wiring board via a metal bump 103e such as a solder bump. Further, an underfill layer 110a is formed between the insulating layer 115 and the laminated body 101. An underfill layer 110b is formed between the insulating layer 115 and the wiring substrate 120.
<電子元件的製造方法> 接著,對本發明的電子元件的製造方法進行說明。本發明的電子元件的製造方法包括上述本發明的積層體的製造方法。本發明的電子元件的製造方法於相同的保存製程的條件下製造複數個電子元件為較佳。 [實施例]<The manufacturing method of an electronic component> Next, the manufacturing method of the electronic component of this invention is demonstrated. The manufacturing method of the electronic component of this invention includes the manufacturing method of the laminated body of this invention mentioned above. The method for manufacturing an electronic component of the present invention is preferable to manufacture a plurality of electronic components under the same storage process conditions. [Example]
以下,藉由實施例對本發明進行進一步具體地說明,本發明於不脫離其宗旨之範圍內並不限定於以下實施例。此外,只要無特別限制,則「%」及「份」為質量基準。NMR為核磁共振的簡稱。Hereinafter, the present invention will be further specifically described by examples. The present invention is not limited to the following examples without departing from the scope of the present invention. In addition, as long as there is no particular limitation, "%" and "part" are the basis of quality. NMR is short for nuclear magnetic resonance.
(合成例1) [源自均苯四甲酸二酐、4,4’-二胺基二苯醚及芐醇的聚醯亞胺前驅物(P-1:不具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將14.06g(64.5毫莫耳)的均苯四甲酸二酐(於140℃下乾燥12小時) 和14.22g(131.58毫莫耳)的芐醇懸浮於50mL的N-甲基吡咯啶酮,並藉由分子篩而使其乾燥。於100℃下對懸浮液加熱了3小時。開始加熱並經過數分鐘之後得到了透明的溶液。將反應混合物冷卻至室溫,並添加了21.43g(270.9毫莫耳)的吡啶及90ml的N-甲基吡咯啶酮。接著,將反應混合物冷卻至-10℃,將溫度保持在-10±4℃的同時經10分鐘添加了16.12g(135.5毫莫耳)的SOCl2 。於添加SOCl2 期間黏度得以增加。用50ml的N-甲基吡咯啶酮稀釋之後於室溫下將反應混合物攪拌了2小時。接著,於20~23℃下經20分鐘對反應混合物滴加了將11.08g(58.7毫莫耳)的4,4’-二胺基二苯醚溶解於100ml的N-甲基吡咯啶酮而得到之溶液。接著,於室溫下將反應混合物攪拌了1晩。接著,使聚醯亞胺前驅物沉澱於5公升的水中,並以5000rpm的速度將水-聚醯亞胺前驅物混合物攪拌了15分鐘。濾取聚醯亞胺前驅物,再次投入到4公升的水中並進而攪拌30分鐘而再次進行過濾。接著,減壓下,於45℃下將聚醯亞胺前驅物乾燥了3天而得到了包含由下述式表示之重複單元之聚醯亞胺前驅物(P-1)。 [化學式39] (Synthesis Example 1) [Polyimide precursor derived from pyromellitic dianhydride, 4,4'-diaminodiphenyl ether, and benzyl alcohol (P-1: Polymer without radical polymerizable group Synthesis of hydrazone imide precursor)] 14.06 g (64.5 mmol) of pyromellitic dianhydride (drying at 140 ° C for 12 hours) and 14.22 g (131.58 mmol) of benzyl alcohol were suspended in 50 mL of N-methylpyrrolidone and dried by molecular sieve. The suspension was heated at 100 ° C for 3 hours. After starting heating and after a few minutes, a clear solution was obtained. The reaction mixture was cooled to room temperature, and 21.43 g (270.9 mmol) of pyridine and 90 ml of N-methylpyrrolidone were added. Next, the reaction mixture was cooled to -10 ° C, and while maintaining the temperature at -10 ± 4 ° C, 16.12 g (135.5 mmol) of SOCl 2 was added over 10 minutes. The viscosity increased during the addition of SOCl 2 . After dilution with 50 ml of N-methylpyrrolidone, the reaction mixture was stirred at room temperature for 2 hours. Next, the reaction mixture was added dropwise with 11.08 g (58.7 mmol) of 4,4'-diaminodiphenyl ether in 100 ml of N-methylpyrrolidone at 20 to 23 ° C over 20 minutes. The resulting solution. Then, the reaction mixture was stirred at room temperature for 1 ton. Next, the polyimide precursor was precipitated in 5 liters of water, and the water-polyimide precursor mixture was stirred at 5000 rpm for 15 minutes. The polyimide precursor was collected by filtration, poured into 4 liters of water again, and stirred for 30 minutes, and then filtered again. Then, the polyimide precursor was dried at 45 ° C. for 3 days under reduced pressure to obtain a polyimide precursor (P-1) containing a repeating unit represented by the following formula. [Chemical Formula 39]
(合成例2) [源自均苯四甲酸二酐、4,4’-二胺基二苯醚及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(P-2:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將14.06g(64.5毫莫耳)的均苯四甲酸二酐(於140℃下乾燥了12小時)、18.6g(129毫莫耳)的甲基丙烯酸2-羥乙酯、0.05g的對苯二酚、10.7g的吡啶及140g的二乙二醇二甲醚(二乙二醇二甲醚)進行混合,且於60℃的溫度下攪拌18小時而製造了均苯四酸與甲基丙烯酸2-羥乙酯的二酯。接著,藉由SOCl2 將所得到之二酯氯化之後,以與合成例1相同的方法用4,4’-二胺基二苯醚轉換為聚醯亞胺前驅物,並以與合成例1相同的方法得到了包含由下述式表示之重複單元之聚醯亞胺前驅物(P-2)。 [化學式40] (Synthesis Example 2) [Polyimide precursor derived from pyromellitic dianhydride, 4,4'-diaminodiphenyl ether, and 2-hydroxyethyl methacrylate (P-2: radical-containing Synthesis of polymerizable polyfluorene imide precursor)] 14.06 g (64.5 mmol) of pyromellitic dianhydride (dried at 140 ° C for 12 hours), 18.6 g (129 mmol) 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 10.7 g of pyridine, and 140 g of diethylene glycol dimethyl ether (diethylene glycol dimethyl ether) were mixed and the temperature was at 60 ° C. After stirring for 18 hours, a diester of pyromellitic acid and 2-hydroxyethyl methacrylate was produced. Next, the obtained diester was chlorinated with SOCl 2 and then converted to a polyfluorene imine precursor by 4,4'-diaminodiphenyl ether in the same manner as in Synthesis Example 1. 1 In the same manner, a polyfluorene imide precursor (P-2) containing a repeating unit represented by the following formula was obtained. [Chemical Formula 40]
(合成例3) [源自4,4’-氧雙鄰苯二甲酸酐、4,4’-二胺基二苯醚及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(P-3:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將20.0g(64.5毫莫耳)的4,4’-氧雙鄰苯二甲酸酐(於140℃下乾燥了12小時)、18.6g(129毫莫耳)的甲基丙烯酸2-羥乙酯、0.05g的對苯二酚、10.7g的吡啶及140g的二乙二醇二甲醚進行混合,且於60℃的溫度下攪拌18小時而製造了4,4’-氧基二鄰苯二甲酸與甲基丙烯酸2-羥乙酯的二酯。接著,藉由SOCl2 將所得到之二酯氯化之後,以與合成例1相同的方法用4,4’-二胺基二苯醚轉換為聚醯亞胺前驅物,並以與合成例1相同的方法得到了包含由下述式表示之重複單元之聚醯亞胺前驅物(P-3)。 [化學式41] (Synthesis Example 3) [Polyimide precursor derived from 4,4'-oxybisphthalic anhydride, 4,4'-diaminodiphenyl ether, and 2-hydroxyethyl methacrylate (P -3: Synthesis of a polyimide precursor having a radical polymerizable group)] 20.0 g (64.5 mmol) of 4,4'-oxybisphthalic anhydride (dried at 140 ° C for 12 Hours), 18.6 g (129 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 10.7 g of pyridine, and 140 g of diethylene glycol dimethyl ether, and mixed at 60 ° C It was stirred at a temperature of 18 hours for 18 hours to produce a diester of 4,4'-oxydiphthalic acid and 2-hydroxyethyl methacrylate. Next, the obtained diester was chlorinated with SOCl 2 and then converted to a polyfluorene imine precursor by 4,4'-diaminodiphenyl ether in the same manner as in Synthesis Example 1. 1 In the same manner, a polyfluorene imide precursor (P-3) containing a repeating unit represented by the following formula was obtained. [Chemical Formula 41]
(合成例4)[丙烯酸類聚合物(P-6)的合成] 將27.0g(153.2毫莫耳)的甲基丙烯酸苄酯、20g(157.3毫莫耳)的N-異丙基甲基丙烯醯胺、39g(309.2毫莫耳)的甲基丙烯酸烯丙酯、13g(151.0毫莫耳)的甲基丙烯酸、聚合起始劑(V-601、Wako Pure Chemical Industries, Ltd.製)3.55g(15.4毫莫耳)及3-甲氧基-2-丙醇300g進行混合。於氮環境下,向加熱至75℃之3-甲氧基-2-丙醇300g中經2小時滴加了混合液。滴加結束之後,進而於氮環境下、且於75℃下攪拌了2小時。反應結束後,投入到5公升水中而使聚合物沉澱,並以5000rpm的速度攪拌了15分鐘。過濾而去除丙烯酸樹脂,再次投入到4公升水中且進而攪拌30分鐘來再次進行過濾而去除。接著,減壓下,於45℃下將所得到之丙烯酸樹脂乾燥3天而得到了由下述式表示之丙烯酸類聚合物(P-6)。 [化學式42] (Synthesis Example 4) [Synthesis of acrylic polymer (P-6)] 27.0 g (153.2 mmol) of benzyl methacrylate and 20 g (157.3 mmol) of N-isopropylmethacryl Amidine, 39 g (309.2 mmol) of allyl methacrylate, 13 g (151.0 mmol) of methacrylic acid, polymerization initiator (V-601, manufactured by Wako Pure Chemical Industries, Ltd.) 3.55 g (15.4 mmol) and 300 g of 3-methoxy-2-propanol were mixed. In a nitrogen environment, the mixed solution was added dropwise to 300 g of 3-methoxy-2-propanol heated to 75 ° C over 2 hours. After completion of the dropwise addition, the mixture was further stirred at 75 ° C. for 2 hours under a nitrogen atmosphere. After completion of the reaction, the polymer was poured into 5 liters of water to precipitate a polymer, and the mixture was stirred at 5000 rpm for 15 minutes. The acrylic resin was removed by filtration, and it was again poured into 4 liters of water and stirred for 30 minutes to perform filtration and removal again. Then, the obtained acrylic resin was dried at 45 ° C. for 3 days under reduced pressure to obtain an acrylic polymer (P-6) represented by the following formula. [Chemical Formula 42]
<感光性樹脂組成物的製備> 將下述中所記載之成分進行混合,並作為均勻的溶液而製備了感光性樹脂組成物的塗佈液。 (組成) 樹脂:下述表中所記載之質量份 自由基聚合性化合物:下述表中所記載之質量份 光自由基聚合起始劑:下述表中所記載之質量份 矽烷偶合劑:下述表中所記載之質量份 防鏽劑:下述表中所記載之質量份 聚合抑制劑:下述表中所記載之質量份 鹼產生劑:下述表中所記載之質量份 溶劑1(二甲基亞碸):100質量份 溶劑2(γ-丁內酯):25質量份<Preparation of photosensitive resin composition> The components described below were mixed and a coating solution of the photosensitive resin composition was prepared as a uniform solution. (Composition) Resin: parts by mass of the radical polymerizable compound described in the following table: parts by mass of the photo radical polymerization initiator described in the following table: parts by mass of the silane coupling agent described in the following table: The parts by mass of the rust preventive agent described in the following table: the parts by mass of the polymerization inhibitor described in the following table: the parts by mass of the alkali generator described in the following table: the parts by mass of the solvent 1 in the following table (Dimethylmethylene): 100 parts by mass of solvent 2 (γ-butyrolactone): 25 parts by mass
[表6]
表中所記載之簡稱如下。 (樹脂) P-1~P-3:於合成例1~3中進行合成之聚醯亞胺前驅物(P-1)~(P-3) P-5:Matrimid5218(Huntsman Corporation製、閉環型聚醯亞胺) P-6:於合成例5中進行合成之丙烯酸類聚合物(P-6)(丙烯酸樹脂) P-7:聚甲基丙烯酸烯甲酯(Mw=15000、Sigma-Aldrich Co. LLC.製)The abbreviations listed in the table are as follows. (Resin) P-1 to P-3: Polyimide precursors (P-1) to (P-3) synthesized in Synthesis Examples 1 to 3 P-5: Matrimid 5218 (manufactured by Huntsman Corporation, closed-loop type) Polyimide) P-6: Acrylic polymer (P-6) (acrylic resin) synthesized in Synthesis Example 5 P-7: Polymethylmethacrylate (Mw = 15000, Sigma-Aldrich Co . LLC.)
(自由基聚合性化合物) B-1:SR209(Sartomer company Inc.製、四乙二醇二丙烯酸酯) B-2:NK酯A-9300(Shin-Nakamura Chemical Co, Ltd. 製、乙氧基化異氰脲酸三丙烯酸酯) B-3:A-TMMT(Shin-Nakamura Chemical Co, Ltd. 製、季戊四醇四丙烯酸酯) B-4:A-DPH(Shin-Nakamura Chemical Co, Ltd. 製、二季戊四醇六丙烯酸酯)(Radical Polymerizable Compound) B-1: SR209 (manufactured by Sartomer company Inc., tetraethylene glycol diacrylate) B-2: NK ester A-9300 (manufactured by Shin-Nakamura Chemical Co, Ltd., ethoxy group) Isocyanurate triacrylate) B-3: A-TMMT (manufactured by Shin-Nakamura Chemical Co, Ltd., pentaerythritol tetraacrylate) B-4: A-DPH (manufactured by Shin-Nakamura Chemical Co, Ltd., Dipentaerythritol hexaacrylate)
(光自由基聚合起始劑) C-1:IRGACURE OXE 01(BASF公司製、肟化合物) C-2:IRGACURE OXE 02(BASF公司製、肟化合物) C-3:IRGACURE-784(BASF製、茂金屬化合物) C-4:ADEKA ARKLS NCI-831(ADEKA CORPORATION製、肟化合物)(Photo radical polymerization initiator) C-1: IRGACURE OXE 01 (manufactured by BASF, oxime compound) C-2: IRGACURE OXE 02 (manufactured by BASF, oxime compound) C-3: IRGACURE-784 (manufactured by BASF, Metallocene compound) C-4: ADEKA ARKLS NCI-831 (made by ADEKA CORPORATION, oxime compound)
(矽烷偶合劑) D-1:KBM-602(Shin-Etsu Chemical Co., Ltd.製、具有胺基之矽烷化合物) D-2:2-((3-(三乙氧基甲矽烷基)丙基)胺基甲醯基)苯甲酸(Aquila Pharmatech LLC製、具有羧基之矽烷化合物) D-3:三乙氧基甲矽烷基丙基馬來醯胺酸(Gelest,Inc製、具有羧基之矽烷化合物)(Silane coupling agent) D-1: KBM-602 (silane compound having an amine group manufactured by Shin-Etsu Chemical Co., Ltd.) D-2: 2-((3- (triethoxysilyl) Propyl) aminomethylamido) benzoic acid (silane compound with carboxyl group produced by Aquila Pharmatech LLC) D-3: triethoxysilylpropylmaleic acid (manufactured by Gelest, Inc. and carboxyl group) Silane compounds)
(防鏽劑) E-1:KEMITEC BT-C(CHEMIPRO KASEI KAISHA, LTD製、1,2,3-苯并三唑) E-2:1HT(TOYOBO CO., LTD.製、1H-四唑) E-3:P5T(TOYOBO CO., LTD.製、5-苯基-1H-四唑)(Antirust agent) E-1: KEMITEC BT-C (made by CHEMIPRO KASEI KAISHA, LTD, 1,2,3-benzotriazole) E-2: 1HT (made by TOYOBO CO., LTD., 1H-tetrazole ) E-3: P5T (manufactured by TOYOBO CO., LTD., 5-phenyl-1H-tetrazole)
(聚合抑制劑) F-1:4-甲氧基苯酚 F-2:對苯醌 F-3:1-亞硝基-2-萘酚(Polymerization inhibitor) F-1: 4-methoxyphenol F-2: p-benzoquinone F-3: 1-nitroso-2-naphthol
(鹼產生劑) A-1、A-21、A-40:下述結構的化合物(熱鹼產生劑) A-43:WPBG-266(Wako Pure Chemical Industries, Ltd.製、光鹼產生劑。此外,該化合物還是即使加熱亦分解而產生鹼之化合物。亦即,還是熱鹼產生劑。) [化學式43] (Alkali generator) A-1, A-21, A-40: Compounds of the following structure (thermal alkali generator) A-43: WPBG-266 (manufactured by Wako Pure Chemical Industries, Ltd., photo-alkali generator). In addition, the compound is a compound that generates a base by being decomposed even when heated. That is, it is also a hot base generator.) [Chemical Formula 43]
<積層體的製造> 使各感光性樹脂組成物通過細孔的寬度為0.8μm的過濾器而進行加壓過濾之後,於矽晶圓上藉由旋轉塗佈法而以層狀應用,並使用加熱板於100℃下乾燥5分鐘而形成了感光性樹脂組成物層。接著,以下述表中所記載之時間和溫度進行保存製程(PCD製程)之後,使用步進機(Nikon NSR 2005 i9C)並以500mJ/cm2 的曝光能量對感光性樹脂組成物層進行了曝光。接著,以下述表中所記載之時間和溫度對曝光後的感光性樹脂組成物層進行保存製程(PED製程)之後,使用環戊酮進行60秒鐘的顯影而形成了直徑10μm的孔。接著,以下述表中所記載之時間和溫度進行保存製程(PDD製程)之後,於氮環境下,且於230℃下加熱3小時而形成了樹脂層(圖案)。接著,將加熱後的樹脂層(圖案)冷卻至室溫,且以下述表中所記載之時間和溫度進行保存製程(PBD製程)之後,進行鍍銅處理來於樹脂層上形成厚度5μm的銅薄膜,從而形成了積層體1。 此外,靜置於調整為下述表中所記載之設定溫度之乾淨的恆溫恆濕器((ESPEC CORP.)製、PCR-3J)來進行各保存製程。 接著,對積層體1的銅薄膜照射氧電漿之後,再次進行感光性樹脂組成物的應用、曝光、顯影、加熱及各保存製程之後,進行鍍銅來於樹脂層上形成厚度5μm的銅薄膜而得到了積層體2。 接著,對積層體2的銅薄膜照射氧電漿之後,再次進行感光性樹脂組成物的應用、曝光、顯影、加熱及各保存製程之後,進行鍍銅處理來於樹脂層上形成厚度5μm的銅薄膜而得到了積層體3。<Production of laminated body> After each photosensitive resin composition is subjected to pressure filtration through a filter having a pore width of 0.8 μm, it is applied in a layered manner on a silicon wafer by a spin coating method and used. The hot plate was dried at 100 ° C for 5 minutes to form a photosensitive resin composition layer. Next, the storage process (PCD process) was performed at the time and temperature shown in the following table, and then the photosensitive resin composition layer was exposed using a stepper (Nikon NSR 2005 i9C) with an exposure energy of 500 mJ / cm 2 . . Next, the exposed photosensitive resin composition layer was subjected to a storage process (PED process) at the times and temperatures described in the following table, and then developed using cyclopentanone for 60 seconds to form holes having a diameter of 10 μm. Next, after the storage process (PDD process) was performed at the time and temperature shown in the following table, the resin layer (pattern) was formed by heating at 230 ° C for 3 hours under a nitrogen environment. Next, the heated resin layer (pattern) was cooled to room temperature, and after the storage process (PBD process) was performed at the time and temperature shown in the following table, a copper plating process was performed to form copper with a thickness of 5 μm on the resin layer. Thin film, thereby forming a laminated body 1. In addition, each storage process was performed by leaving it in a clean thermostat-hygrostat (manufactured by ESPEC CORP., PCR-3J) adjusted to the set temperature described in the following table. Next, the copper thin film of the laminated body 1 was irradiated with oxygen plasma, and then the photosensitive resin composition was applied, exposed, developed, heated, and each storage process was performed. Then, copper plating was performed to form a 5 μm-thick copper thin film on the resin layer. And laminated body 2 was obtained. Next, the copper thin film of the laminated body 2 was irradiated with oxygen plasma, and then the photosensitive resin composition was applied, exposed, developed, heated, and each storage process was performed. Then, a copper plating treatment was performed to form copper having a thickness of 5 μm on the resin layer. A thin film was obtained to obtain a laminated body 3.
[表7]
上述表中所記載之各條件中的保存時間為表面溫度達到設定溫度之後的經過時間。各保存製程中的表面溫度的變動幅度為5℃以下。又,各保存製程中的平均表面溫度大致與設定溫度相同。The storage time in each condition described in the above table is the elapsed time after the surface temperature reaches the set temperature. The fluctuation range of the surface temperature during each storage process is 5 ° C or less. The average surface temperature in each storage process is approximately the same as the set temperature.
<評價> [剝離缺陷(評價1)] 沿垂直方向切斷積層體2而觀察寬度5mm的截面,從而確認了於樹脂層/樹脂層間及銅/樹脂層間有無剝離。若未發生剝離。則表示具有優異的黏合性,且成為較佳的結果。 A:未發生剝離 B:發生了1~兩個剝離 C:發生了3~5個剝離 D:發生了6個以上的剝離<Evaluation> [Peeling Defect (Evaluation 1)] The multilayer body 2 was cut in the vertical direction and a cross section with a width of 5 mm was observed to confirm the presence or absence of peeling between the resin layer / resin layer and the copper / resin layer. If peeling does not occur. It means that it has excellent adhesion and has a better result. A: No peeling occurred B: 1 to 2 peelings occurred C: 3 to 5 peelings occurred D: 6 or more peelings occurred
[剝離欠陥(評價2)] 沿垂直方向切斷積層體3而觀察寬度5mm的截面,從而確認了於樹脂層/樹脂層間及銅/樹脂層間有無剝離。若未發生剝離。則表示具有優異的黏合性,且成為較佳的結果。 A:未發生剝離 B:發生了1~2個剝離 C:發生了3~5個剝離 D:發生了6個以上的剝離[Peeling failure (Evaluation 2)] The multilayer body 3 was cut in the vertical direction and a cross section with a width of 5 mm was observed to confirm the presence or absence of peeling between the resin layer / resin layer and the copper / resin layer. If peeling does not occur. It means that it has excellent adhesion and has a better result. A: No peeling occurred B: 1 to 2 peelings occurred C: 3 to 5 peelings occurred D: 6 or more peelings occurred
[界限分辨率(評價3)] 利用步進機(Nikon NSR2005 i9C)對矽晶圓上的感光性樹脂組成物層進行了曝光。曝光利用i射線進行,且於波長365nm下,以200mJ/cm2 的各曝光能量直至5μm~25μm使用1μm增量的保險絲盒的光遮罩來進行了曝光。對已曝光之感光性樹脂組成物層,作為顯影液使用環戊酮和丙二醇甲醚乙酸酯來進行了顯影。具體而言,對已曝光之感光性樹脂組成物層噴塗環戊酮,接著噴塗丙二醇甲醚乙酸酯而進行60秒鐘的顯影。藉由以下基準對露出於保險絲盒的底部之矽晶圓的線寬進行了評價。線寬越小越表示能夠將於之後的電鍍製程中形成之金屬配線寬微細化,且成為較佳的結果。測定界限為5μm。將結果示於表中。 A:5μm以上且8μm以下 B:大於8μm且10μm以下 C:大於10μm且15μm以下 D:大於15μm[Limiting Resolution (Evaluation 3)] The photosensitive resin composition layer on the silicon wafer was exposed using a stepper (Nikon NSR2005 i9C). The exposure was performed using i-rays, and the exposure was performed at a wavelength of 365 nm with an exposure energy of 200 mJ / cm 2 up to 5 μm to 25 μm using a light mask of a fuse box in 1 μm increments. The exposed photosensitive resin composition layer was developed using cyclopentanone and propylene glycol methyl ether acetate as a developing solution. Specifically, cyclopentanone was spray-coated on the exposed photosensitive resin composition layer, and then propylene glycol methyl ether acetate was spray-coated for development for 60 seconds. The line width of the silicon wafer exposed at the bottom of the fuse box was evaluated by the following criteria. The smaller the line width, the smaller the width of the metal wiring that can be formed in the subsequent plating process, and the better the result. The measurement limit is 5 μm. The results are shown in the table. A: 5 μm or more and 8 μm or less B: 8 μm or more and 10 μm or less C: 10 μm or more and 15 μm or less D: 15 μm or more
[表8]
如上述表所示,進行了保存製程之實施例中,能夠製造黏合性優異之積層體。又,作為樹脂使用了聚醯亞胺前驅物之組成物1~12的感光性樹脂組成物的界限分辨率高,且使用了該感光性樹脂組成物之實施例1~33、36、37的積層體能夠將金屬配線寬度進一步微細化。As shown in the above table, in the examples in which the storage process was performed, a laminated body having excellent adhesiveness could be produced. In addition, the photosensitive resin composition using the polyimide precursor composition 1 to 12 as the resin has high limit resolution, and Examples 1 to 33, 36, and 37 using the photosensitive resin composition are used. The laminated body can further reduce the width of the metal wiring.
100‧‧‧電子元件100‧‧‧Electronic components
101a~101d‧‧‧半導體元件101a ~ 101d‧‧‧Semiconductor element
101‧‧‧積層體101‧‧‧Laminated body
102b~102d‧‧‧貫通電極102b ~ 102d‧‧‧through electrode
103a~103e‧‧‧金屬凸塊103a ~ 103e‧‧‧ metal bump
105‧‧‧再配線層105‧‧‧ redistribution layer
110、110a、110b‧‧‧底部填充層110, 110a, 110b‧‧‧ Underfill
115‧‧‧絕緣層115‧‧‧ Insulation
120‧‧‧配線基板120‧‧‧ wiring board
120a‧‧‧表面電極120a‧‧‧ surface electrode
201~204‧‧‧樹脂層201 ~ 204‧‧‧Resin layer
301~303‧‧‧金屬層301 ~ 303‧‧‧metal layer
401~403‧‧‧槽401 ~ 403‧‧‧slot
500‧‧‧積層體500‧‧‧layer
圖1為表示積層體一實施形態的結構之概略圖。 圖2為表示電子元件一實施形態的結構之概略圖。FIG. 1 is a schematic diagram showing a configuration of an embodiment of a laminated body. FIG. 2 is a schematic diagram showing a configuration of an embodiment of an electronic component.
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| TWI802670B (en) * | 2018-03-29 | 2023-05-21 | 日商富士軟片股份有限公司 | Photosensitive resin composition, cured film, laminate, method for producing cured film, and semiconductor device |
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| TWI872020B (en) * | 2018-03-29 | 2025-02-11 | 日商富士軟片股份有限公司 | Method for manufacturing laminate |
| JP7407518B2 (en) * | 2018-04-27 | 2024-01-04 | 旭化成株式会社 | Negative photosensitive resin composition and method for producing the same |
| JP7259220B2 (en) * | 2018-06-13 | 2023-04-18 | 株式会社レゾナック | Photosensitive resin composition, wiring layer and semiconductor device |
| TW202244639A (en) * | 2021-02-17 | 2022-11-16 | 日商富士軟片股份有限公司 | Method for producing permanent film, method for producing multilayer body, and method for producing semiconductor device |
| TW202248755A (en) | 2021-03-22 | 2022-12-16 | 日商富士軟片股份有限公司 | Negative photosensitive resin composition, cured product, laminate, method for producing cured product, and semiconductor device |
| WO2023032545A1 (en) | 2021-08-31 | 2023-03-09 | 富士フイルム株式会社 | Cured product production method, laminate production method, semiconductor device manufacturing method, and processing liquid |
| EP4456133A4 (en) | 2021-12-23 | 2025-07-30 | Fujifilm Corp | METHOD FOR PRODUCING JOINED BODY, JOINED BODY, METHOD FOR PRODUCING LAMINATE, LAMINATE, METHOD FOR PRODUCING DEVICE, DEVICE, AND COMPOSITION FOR FORMING PRECURSOR PART CONTAINING POLYIMIDE |
| EP4502009A4 (en) | 2022-03-29 | 2025-07-02 | Fujifilm Corp | Resin composition, cured product, laminate, method for producing the cured product, method for producing the laminate, and semiconductor device |
| KR20250056254A (en) | 2022-09-30 | 2025-04-25 | 후지필름 가부시키가이샤 | Method for producing a film, photosensitive resin composition, method for producing a cured product, cured product, and laminate |
| KR20250055605A (en) | 2022-09-30 | 2025-04-24 | 후지필름 가부시키가이샤 | Resin composition, cured product, laminate, method for producing cured product, method for producing laminate, method for producing semiconductor device, and, semiconductor device |
| TW202424051A (en) | 2022-09-30 | 2024-06-16 | 日商富士軟片股份有限公司 | Resin composition, cured product, laminate, method for producing cured product, method for producing laminate, method for producing semiconductor element, and semiconductor element |
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| JPH03200970A (en) * | 1989-08-30 | 1991-09-02 | Toray Ind Inc | Pattern working method for photosensitive polymide |
| JPH10307392A (en) * | 1997-05-07 | 1998-11-17 | Toray Ind Inc | Chemical rays responsive polymer composition |
| JPH11184077A (en) * | 1997-12-24 | 1999-07-09 | Hitachi Chem Co Ltd | Photosensitive composition and manufacture of relief pattern by using same |
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| JP2000131838A (en) * | 1998-10-26 | 2000-05-12 | Hitachi Chemical Dupont Microsystems Ltd | Photosensitive resin composition, production of relief pattern and semiconductor device |
| JP2000290406A (en) * | 1999-04-07 | 2000-10-17 | Toray Ind Inc | Formation of pattern of heat-resistant resin precursor |
| JP2001064416A (en) * | 1999-08-31 | 2001-03-13 | Nippon Zeon Co Ltd | Polyimide film and method for producing the same |
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