200924026 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種可以生成高密度電漿的電漿製程用 電極以及電漿製程裝置。 【先前技術】 進行化學氣相沈積（Chemical Vapor Deposition，CVD ) 或餘刻等的處理的電漿製程裝置具備如下的電漿製程用電 極’該電漿製程用電極包括接地的陽極、以及供給高頻電 力的陰極。在陽極的上表面上，載置著半導體基板等被處 理基板。於陰極上’設置著與陽極上的被處理基板相向的 族、射頭（shower head)，該簇射頭具有多個向被處理基板 供給製程氣體的貫通孔。 眾所周知，若於陰極上設置空洞（cavity)，則將藉由 中二效應（hollow effect)而獲得較高的電子密度。於電漿 3二^使用如下的中空陰極，該中空陰極相對於簇射 口而設置著製程氣體的出口側的直徑大於入 —方^^/Γ的凹坑。若一方面使製程氣體流入至貫通孔， 古6:1陰極供給高頻電力，則因中空效應而產生的 可以增大努程襞。又，藉由高密度電漿， 的情料ί乳體的離解及反應性。因此，於電聚CVD 月形=，可以實現快速成膜。 目錢出有如下的中空陰極，該中空陰極以相 -己置形成有剖㈣狀為崎狀或圓錐狀的多個凹坑曰(參 200924026 報)。又，提出有如下技 表面上’使用槽來:二二:勻= 好地:佈於陰極 2004-296526號公報）。 （ > …、日本專利特開 =增:此又4:，及連結多個二== 手段。 σ〗在較地調整製程氣體或電漿分佈的 【發明内容】 地生==，本發明的目的在於提供-種可以均勻 極以及電漿製^置且可以降低製造成本的錢製程用電 製程=成i述目的’本發明的第1態樣提供-種電漿 而ΐ電漿製程用電極包括:⑴陽極，用於載 基板;以及(2)陰極，具有第1主表 域板相/面’上遠第1主表面隔著生成的空間而 且設置著多個第1槽，上述第2主表面與第 個第1 ’且設置著與多個第1槽交又且寬度小於多 ^ ，叹置著自第1主表面貫通至第2主表面的貫通 孔。 的第2態樣提供—種電漿製程裳置，該電装製 私裝置L括⑴進行電漿處理的處理室、以及⑵配置 200924026 於處理室内的電漿製程用電極；並且，（3)上述電1製程 用電極包括：陽極，用於載置藉由電缓而處理的基板；以 及陰極，具有第i主表面及第2主表面，上述第^主表面 - 隔著生成電漿的空間而與陽極相向，且設置著多個第j 槽，上述第2主表面與第1主表面相向，且設置著斑多個 第1槽交叉且寬度小於多個第丨槽的多個第2槽；於第ι 槽與第2槽的交叉點上，設置著自第]主表面貫通至第2 f 主表面的貫通孔。 【實施方式】 以下參照圖式，對本發明的形態進行說明。以下圖式 中’對相同或類似的部分附以相同或類似的符號。但是， 圖式是示意性的，應注意圖式中的裝置或系統的構成等歲 現實中的構成不同。因此，具體的構成應參照以下說明來 判斷。又’當然，於圖式彼此之間亦包含有彼此構成等不 同的部分。 ，又以下所示的本發明的貫施形態，是例示用以使本 U 判的技術思想具體化的裝置或方法，本發_技術思想 並非是將構成零件的材質、形狀、構造、配置等特別限定 為以下所述。本發明的技術思想可於申請專利範圍所揭示 的技術範圍内加以各種變更。 、如圖1所不，本發明之實施形態的電漿製程裝置包括 進行電«處理的處理室40、以及配置於處理室4G内 -衆製程用電極（10、12)等。電漿製程用電極（10、 具有陽極12以及陰極1〇。於陽極12的表面，載置著藉 200924026 電漿而處理的基板22。陰極10設置於簇射頭52上，該簇 射頭52通過配管50而供給製程氣體。藉由連接著配管44 的真空泵（省略圖示）等，而將處理室40抽成真空。陽極 12經由處理室40而接地。陰極10上連接著電漿生成用電 源46。 如圖2所示，陰極10呈矩形狀，如圖3所示，該陰極 10具有第1主表面14以及與第1主表面14相向的第2主 Γ 表面16。如圖1所示，第1主表面1隔著生成電漿的空間 而與陽極12上的基板22相向。第2主表面朝向製程氣體 的供給側。 如圖2及圖3所示，於第1主表面14上，於厚度為T 的陰極10的一對相向的邊之間，以固定間距Px而設置著 呈線狀延伸的多個第1槽4。如圖3所示，沿著第1槽4 的延伸方向而垂直切開的剖面形狀是寬度為Wx、深度為 Dx的苑形。 # 如圖2及圖4所示，於第2主表面16上，於與第1 I 槽4平行的陰極10的一對邊之間，以固定間距Py而設置 著呈線狀延伸的多個第2槽6。如圖4所示，沿著第2槽6 的延伸方向而垂直切開的剖面形狀是寬度為Wy、深度為 Dy的矩形。 如圖5以及圖6所示，多個第2槽6與多個第1槽分 別交叉，而形成多個貫通孔8。此處，第1槽4以及第2 - 槽6各自的深度Dx、Dy之和，相對於陰極10的厚度T 而言，滿足下式： (2) f κ 200924026200924026 IX. Description of the Invention: [Technical Field] The present invention relates to a plasma processing electrode and a plasma processing apparatus which can generate high-density plasma. [Prior Art] A plasma processing apparatus that performs a chemical vapor deposition (CVD) or a process such as a remnant has the following electrode for a plasma process. The electrode for the plasma process includes a grounded anode, and the supply is high. The cathode of frequency power. On the upper surface of the anode, a substrate to be processed such as a semiconductor substrate is placed. A family, a shower head, which faces the substrate to be processed on the anode, is provided on the cathode, and the shower head has a plurality of through holes for supplying a process gas to the substrate to be processed. It is well known that if a cavity is provided on the cathode, a higher electron density will be obtained by a hollow effect. The hollow cathode is used in the plasma, and the hollow cathode is provided with a pit having a diameter larger than the diameter of the inlet side of the process gas with respect to the shower opening. If the process gas flows into the through hole on the one hand, and the high frequency power is supplied to the cathode of the ancient 6:1, the hollow effect can increase the range. Moreover, by high-density plasma, the disintegration and reactivity of the milk body. Therefore, in the form of electropolymerization CVD, it is possible to achieve rapid film formation. The hollow cathode has a hollow cathode which is formed with a plurality of pits in a shape of a cross section (seven) in a zigzag shape or a conical shape (refer to 200924026). Further, the following technique has been proposed. On the surface, 'the groove is used: two: uniform = good: cloth is placed on the cathode. No. 2004-296526. ( > ..., Japanese Patent Special Opening = Increase: This is again 4:, and a plurality of two == means. σ〗 In the adjustment of the process gas or plasma distribution [Abstract] 地生 ==, the present invention The purpose of the present invention is to provide a plasma process which can be uniformly poled and made of a plasma and can reduce the manufacturing cost. The first aspect of the present invention provides a plasma and a plasma process. The electrode includes: (1) an anode for carrying a substrate; and (2) a cathode having a first main surface plate phase/face' on the first major surface of the first main surface, and a plurality of first grooves are provided The second surface is provided with the first first surface and the first first groove, and the width is less than φ, and the second aspect is provided by the through hole which penetrates from the first main surface to the second main surface. a plasma processing apparatus, the electrical equipment L includes (1) a processing chamber for plasma processing, and (2) a plasma processing electrode configured in the processing chamber 200924026; and (3) the electric 1 process electrode includes An anode for mounting a substrate processed by electrical gradual recovery; and a cathode having an i-th main surface and The second main surface, the first main surface, is opposed to the anode via a space for generating plasma, and a plurality of j-th grooves are provided, and the second main surface faces the first main surface and is provided with a plurality of spots The first groove intersects and has a plurality of second grooves having a width smaller than the plurality of second grooves; and a through hole penetrating from the first main surface to the second main surface is provided at an intersection of the first groove and the second groove. [Embodiment] The present invention will be described below with reference to the drawings. In the following drawings, the same or similar parts are denoted by the same or similar symbols. However, the drawings are schematic and should be noted in the drawings. The configuration of the device or the system is different from the actual configuration. Therefore, the specific configuration should be determined by referring to the following description. Of course, the drawings also include different components from each other, and the following are also shown. The embodiment of the present invention is an apparatus or method for embodying the technical idea of the present invention. The technical idea of the present invention is not limited to the following materials, shapes, structures, arrangements, and the like. Said. The technical idea can be variously changed within the technical scope disclosed in the scope of the patent application. As shown in Fig. 1, the plasma processing apparatus according to the embodiment of the present invention includes a processing chamber 40 for performing electric treatment, and a processing chamber. 4G inner-electrode process electrode (10, 12), etc. The electrode for plasma processing (10 has an anode 12 and a cathode 1). On the surface of the anode 12, a substrate 22 treated with plasma of 200924026 is placed. 10 is disposed on the shower head 52, and the shower head 52 supplies the process gas through the pipe 50. The processing chamber 40 is evacuated by a vacuum pump (not shown) or the like connected to the pipe 44. The anode 12 is processed. The chamber 40 is grounded, and a plasma generating power source 46 is connected to the cathode 10. As shown in Fig. 2, the cathode 10 has a rectangular shape. As shown in Fig. 3, the cathode 10 has a first main surface 14 and a second main surface 16 facing the first main surface 14. As shown in Fig. 1, the first main surface 1 faces the substrate 22 on the anode 12 via a space in which plasma is generated. The second main surface faces the supply side of the process gas. As shown in FIG. 2 and FIG. 3, a plurality of first grooves extending in a line shape are provided on the first main surface 14 between a pair of opposing sides of the cathode 10 having a thickness T at a fixed pitch Px. 4. As shown in Fig. 3, the cross-sectional shape which is vertically cut along the extending direction of the first groove 4 is a garden shape having a width Wx and a depth Dx. As shown in FIG. 2 and FIG. 4, a plurality of linearly extending portions are provided on the second main surface 16 between the pair of sides of the cathode 10 parallel to the first I groove 4 at a fixed pitch Py. The second slot 6. As shown in Fig. 4, the cross-sectional shape that is vertically cut along the extending direction of the second groove 6 is a rectangle having a width Wy and a depth Dy. As shown in Figs. 5 and 6, the plurality of second grooves 6 intersect the plurality of first grooves to form a plurality of through holes 8. Here, the sum of the depths Dx and Dy of the first groove 4 and the second groove 6 satisfies the following formula with respect to the thickness T of the cathode 10: (2) f κ 200924026
Dx+DY^T 下式Dx+DY^T
Px> Wx > Py> Wy < ί ο 於本發明的實施形態中，於 主表…，藉由切割(dlClngf、^ 削（fraise)加工等機械加工而八/線鋸（霞e Saw)、銑 槽6,並於第2槽4以及第2槽成第1槽4以及第2 例如，若將多個第M4的數交又位置形成貫通孔8。 的數量設為j，則藉由（i+j) _=為；，將多個第2槽6 貫通孔8。若i或j中的任人機械加工，將形成β個 ㈦），故而與鑽孔加工（ixj)偏大·於等於3,則（叫）< 可減少加工次數。如此，於士貝通孔8之情形時相比， 低陰極10的製造成本。；發明的實施形態中，可以降 例如，作為圖1所干沾+ Μ (㈣等）或多晶石夕（⑴望電水製程裝置’使用非晶質矽 氮化矽（SiAJi# .Η 4的半導體膜、氧化矽（si〇2)、 的CVD裝置y來進》y=·、）、氮氧化矽（SiON)等的絕緣膜 烷（SiH〇等含明。作為製程氣體，例如使用單矽Px> Wx >Py> Wy < ί ο In the embodiment of the present invention, in the main table..., by cutting (dlClngf, framing machining, etc.), the eight/wire saw (Xia e Saw) In the second groove 4 and the second groove, the first groove 4 and the second groove are formed in the second groove 4 and the second groove. For example, if the number of the plurality of M4 is intersected and the through hole 8 is formed, the number is set to j. (i+j) _= is; a plurality of second grooves 6 are penetrated through the holes 8. If any of i or j is machined, β (seven) is formed, and thus the drilling process (ixj) is too large. If it is equal to 3, then (called) < can reduce the number of processing. Thus, the manufacturing cost of the low cathode 10 is compared to that of the case of the Bayer-through hole 8. In the embodiment of the invention, it is possible to reduce, for example, dry dip + Μ ((4), etc.) or polycrystalline shi (Fig. 1) using amorphous tantalum nitride (SiAJi#.Η 4 The semiconductor film, the ruthenium oxide (si〇2), the CVD device y, the yttrium oxide (y), the yttrium oxynitride (SiON), etc. (SiH〇, etc. are included. As a process gas, for example, a single sheet is used.矽
於CVD中，供給H 的第2主表面16 芝姨射頭52的製程氣體是自陰極10 處理室40内。若自則^通過貫通孔8而導入至已抽成真空的 則於陰極1〇 ^丨電源46向陰極施加電漿生成電力， 各第1槽4向陰極主表面14側將產生製程氣體放電。自 "1〇與基板22之間的空間噴出電漿。如 200924026 此，於陰極10與基板22之間的空間内，穩定地 =:等= 體之情形時，就槽的加工成本舆:能 Μ狀Flea 的見度Wy分別處於約1 mm〜約5 mm =2深度此及深心分別處卻麵〜㈣ 第6 、乃 約5mm的範圍内，且使 'y小於第1槽4的寬度Wx。貫通孔8 寸為WxXWy)。製程氣體從由第1槽4鱼第2 4槽内所r崎通孔8注入至第1槽4中。於第f槽 中，蚀⑧體以及電討以相互擴散，且於各第1槽4 中’使電漿分佈均勻。又 楚 而將產生雷子槽内，因中空效應， 電子的封閉。因此，於各第1槽4中，製程氣體 ^離或反應性將增加。其结果為，相自二 =j 1G與基板22之間的^間噴出高密度的電漿。如此， 使时行平板型電極的㈣裝置相比，利用本 =^實施形態的陰極10,能夠以高速的沈積速度而於大 、二板22上進行堆積。又，由於電漿密度增加，使得製 2體的利用率較大，因此可以抑制無用的粉狀灰 生成。 再者’第1槽4以及第2槽6的寬度、深度以及間距 制1尺寸，根據所使用的製程氣體的種類、混合比及流量、 衣程壓力、低頻（Low Frequency，LF)、高頻（Radio 11 200924026 ，RF)、直流（Direet c_m，D〇、dc 的電源46的種類或電源頻率、堆 專 二的種類或膜質、基板22的種類、以及度電極 == 同。又，於上迷說明中，長度均等的第1槽4以及第2禅 6以相等間距而分別均等地配狀第1主表面心 = f 二上。然而，為了改善電漿或堆積膜的分佈，亦可 j非句勻的間距來分別配設第i槽4以及第2槽6。又， 槽4以及第2槽6各自的長度來配設。此外， ^槽4以及第2槽6以相互正交的方式而配設著。但 各第2槽6亦可盘第1掉 叉，以形成貫^槽中的至少一個以任意角度而交 搞如圖7所示，多個第1槽4以相對於矩形的陰 向延伸的方式，而以相等間距配設於第1 表 上。多個第2槽6以朝向與第！槽4 =的方式’而以相等間距配設於第2主表面二； 曰以及各第2槽6各自的長度因配設位置而不同。 又:陰極10的形狀並不限定於矩形。例如，如圖8 的：二可？成圓形的陰極1〇&。當使用圓形的陰極10a 槽4以及多個第2槽6分別以相等間 4 0二 以及第2主表面16上。各第1槽 及各弟2槽6各自的長度因配設位置而不同。 的第二t圖J、圖7以及圖8所示，使用呈直線狀延伸 的4。然而’第i槽並不限定於直線狀。如圖9所 不’於苐1主表面14上，配設著與矩形陰極1〇的外周平 12 200924026 孔多個第·_ 的中心呈放射狀配設著。又；自，〗。 設與在陰極10的外周側上配^吏電裝分佈均勾，亦可配 第2槽6b。異去令^ °又者的第1槽4a交叉的多個 槽自陰極的中心呈放如下的組合，即，將多個第1 槽以方形框線狀而配設於第2主表面上表面上將第2 面===一㈣表 多個第…交叉而形成貫二槽== 的中心呈放射狀而配設著。又，為使電 外周侧上配設著的第1㈣交叉的多 個第2槽6b。再者’亦可制如下的 1，以心呈放射狀而配設於第1主表面上=第2 槽呈環狀而配設於第2主表面上。 、第 上述說明中’第1槽4的剖面形狀呈矩形。例如，於 銑削加工等的機械加工中，若使用方形 T於 則可容易地形成剖面形狀呈矩形的第j槽4 丁 口：、 及第2槽6交叉的位置上所形成的貫通孔8的開口又以 由第1槽4以及第2槽6各自的寬度來界定 （， 寬度小於第1槽4的寬度。因此，藉由縮曰= 口：寸，可以抑制在第，主表面14側 ： 主表面16侧擴散。 电第2 再者’» 1槽的剖面形狀並不限定於矩形。如圖u 13 200924026 所示’亦可以是第1样 ^ 2 Φ ^ ^在弟I主表面14上的寬度Wxa ί I 底部的寬度偏的剖面形狀。第1 槽中生成的電水沿著第1槽4的傾斜側壁而沪散後喷 出。因此，可叫善_的分佈。政後喷In the CVD, the process gas supplied to the second main surface 16 of the bismuth ejector 52 of the H is from the inside of the processing chamber 40 of the cathode 10. When the vacuum is applied to the cathode through the through hole 8, the plasma is applied to the cathode by the power source 46. The first tank 4 discharges the process gas to the cathode main surface 14 side. The plasma is ejected from the space between "1〇 and the substrate 22. For example, in 200924026, in the space between the cathode 10 and the substrate 22, in the case of stable =: equal = body, the processing cost of the groove 舆: the visibility of the Flea can be about 1 mm to about 5 Mm = 2 depth and the depth of the center are respectively ~ (4) The sixth is about 5 mm, and 'y is smaller than the width Wx of the first groove 4. The through hole 8 inches is WxXWy). The process gas is injected into the first tank 4 from the r-through hole 8 in the second groove of the first tank 4 fish. In the f-th groove, the etched bodies and the electrodes are mutually diffused, and the plasma distribution is made uniform in each of the first grooves 4. In addition, it will produce a trap in the thunder groove, which is closed by electrons due to the hollow effect. Therefore, in each of the first tanks 4, the process gas concentration or reactivity will increase. As a result, a high-density plasma is ejected from between the two = j 1G and the substrate 22. As described above, the cathode 10 of the present embodiment can be deposited on the large and second plates 22 at a high deposition rate as compared with the fourth device of the flat plate type electrode. Further, since the density of the plasma is increased, the utilization ratio of the body is large, so that generation of useless powdery ash can be suppressed. In addition, the width, depth, and pitch of the first groove 4 and the second groove 6 are 1 size, depending on the type of process gas used, the mixing ratio and the flow rate, the dressing pressure, the low frequency (LF), and the high frequency. (Radio 11 200924026, RF), DC (Direet c_m, D〇, dc power supply 46 type, power supply frequency, heap type or film quality, substrate 22 type, and degree electrode == same. Again, on In the above description, the first groove 4 and the second zen 6 having the same length are equally matched with the first main surface center = f at equal intervals. However, in order to improve the distribution of the plasma or the deposited film, The i-th groove 4 and the second groove 6 are disposed in a non-sentence interval, and the lengths of the grooves 4 and the second grooves 6 are arranged. Further, the groove 4 and the second groove 6 are orthogonal to each other. The second slot 6 can also be placed on the first slot 6 to form at least one of the slots to be intersected at any angle as shown in FIG. 7 , and the plurality of first slots 4 are opposite to each other. The rectangular extension of the rectangle is arranged at equal intervals on the first table. The plurality of second grooves 6 are oriented in the direction of the ! 'The second main surface 2 is disposed at equal intervals; the length of each of the second and the second grooves 6 is different depending on the arrangement position. Further, the shape of the cathode 10 is not limited to a rectangular shape. For example, as shown in FIG. A circular cathode 1 〇 & a circular cathode 10a groove 4 and a plurality of second grooves 6 respectively on the equal space 420 and the second main surface 16. Each of the first groove and each The lengths of the two slots 6 are different depending on the arrangement position. As shown in the second t-J, FIG. 7 and FIG. 8, the linear extension 4 is used. However, the 'i-th groove is not limited to a straight line. Fig. 9 is not disposed on the main surface 14 of the crucible 1 and is disposed radially outward with the outer circumference of the rectangular cathode 1 2009 200926. The center of the plurality of holes is radially arranged. The outer circumference side of the cathode 10 is provided with a distribution of the electrical distribution, and the second groove 6b may be provided. The plurality of grooves intersecting the first groove 4a of the cathode 10 are placed in the following combination from the center of the cathode. In other words, the plurality of first grooves are arranged in a square frame shape on the upper surface of the second main surface, and the second surface === one (four) table is intersected with a plurality of ... to form a center of the second groove == In addition, a plurality of second grooves 6b intersecting with the first (fourth) portion disposed on the outer peripheral side of the electric field are provided. Further, the following ones can be made, and the core is radially arranged. 1 main surface = the second groove is annularly disposed on the second main surface. In the above description, the cross-sectional shape of the first groove 4 is rectangular. For example, in machining such as milling, use In the square T, the j-th groove 4 having a rectangular cross-sectional shape can be easily formed: and the opening of the through-hole 8 formed at the position where the second groove 6 intersects is further defined by the first groove 4 and the second groove 6. The respective widths are defined (the width is smaller than the width of the first groove 4). Therefore, by the contraction = port: inch, it is possible to suppress the diffusion on the main surface 14 side: the main surface 16 side. The cross-sectional shape of the second slot is not limited to a rectangle. As shown in Fig. u 13 200924026, it may also be the first cross-sectional shape of the width of the bottom of the width Wxa ί I on the main surface 14 of the brother I. The electric water generated in the first tank is ejected along the inclined side walls of the first tank 4 and then ejected. Therefore, it can be called the distribution of good_. Post-political spray
…又如圖12〜圖14所示，第】槽4亦可以呈如下的 形狀、，即，/匕括形成於第1主表面14侧的矩形的第！凹部 4A、以及形成於第}凹部4A㈤底部的矩形的第2凹部犯。 該形狀適用於深度加工第i槽4的情形時。 第1凹部4A的深度為Dxa，寬度為Wxa。第2凹部 4B的深度為Dxb，寬度為Wxb。第2凹部4B的寬度懸 小於第1凹部4A的寬度Wxa。又，第2槽6的寬度Wy 亦小於第1凹部4A的寬度Wxa。使第1凹部4A的深度 Dxa、第2凹部4B的深度Dxb、以及第2槽6的深度Dy 滿足如下關係： & T-Dxb^Dxa-f Dy<T (2)， 以此方式而形成第1槽4以及第2槽6。貫通孔8的 開口尺寸由第2凹部4B的寬度Wxb與第2槽6的寬度 Wy來界定。因此，可以進一步縮小貫通孔8的開口尺寸， 從而可以抑制在第1主表面14側生成的電漿向第2主表面 16側擴散。 、 又，第2槽6亦可以呈如下的形狀，即，具有形成於 第2主表面16侧的矩形的第3凹部6A、以及形成於第3 凹部6A的底部的矩形的第4凹部6B。第4凹部6B的寬 度Wyb小於第3凹部6A的寬度Wya。若使第4凹部6β、 14 200924026 與圖3所示的第1槽4或圖13所示的第2凹部4B交又而 形成貫通孔，則可縮小開口寬度。於此情形時，亦可抑制 在第1主表面14側生成的電漿向第2主表面16侧 (其他實施形態） 政。 如上所述，利用本發明的實施形態，對本發明進行了 揭示，然而對於構成該揭示的一部分的論述及圖式， f ^解為用來限定本發明。本領域技術人員當知，根據上 因r，m各十種代替的實施形態、實施例以及運用技術二 專“==技術範圍僅由妥當的申請 [產業上之可利用性] 本發明可適用於使用高密度電聚的電裝處理。 【圖式簡單說明】 的本發明之實施形態的電聚製_的構成 圖2是表示本發明之實施形態的電漿製程 極的一例的平面圖。 電極的陰 略圖圖3是表示圖2所示的陰極的沿著从線的剖面的概 略圖 略圖 圖4是表示圖2所示的陰極的沿著站線的剖面的概 圖5是表示圖2所示的陰極的沿著C-C線的剖面的概 疋表不圖2所不的陰極的沿著D _ D線的剖面的概 15 200924026 略圖。 圖7是表示本發明之實施形態的陰極的其他例的平面 圖。 圖8是表示本發明之實施形態的陰極的其他例的平面 圖。 圖9是表示本發明之實施形態的陰極的其他例的平面 圖。 圖10是表示本發明之實施形態的陰極的其他例的平 面圖。 圖11是表示本發明之實施形態的陰極的其他例的剖 面圖。 圖12是表示本發明之實施形態的陰極的其他例的平 面圖。 圖13是表示圖12所示之陰極的沿著E-E線的剖面的 概略圖。 圖14是表示圖12所示之陰極的沿著F-F線的剖面的 概略圖。 圖15是本發明之實施形態的陰極的其他例的剖面圖。 【主要元件符號說明】 4、4a、4b :第 1 槽 4A :第1凹部 4B :第2凹部 6、6a、6b :第 2 槽 6 A ··第3凹部 16 200924026 6B :第4凹部 8、8a :貫通孔 10、10a :陰極 • 12 :陽極 14 :第1主表面 16 :第2主表面 22 :基板 f 40:處理室 44、50 :配管 46 :電源 52 :簇射頭Further, as shown in Figs. 12 to 14, the first groove 4 may have the following shape, i.e., a rectangular shape formed on the side of the first main surface 14! The concave portion 4A and the rectangular second concave portion formed at the bottom of the fifth concave portion 4A (five) are smashed. This shape is suitable for the case where the i-th groove 4 is deep-processed. The first recess 4A has a depth Dxa and a width Wxa. The second recess 4B has a depth Dxb and a width Wxb. The width of the second recess 4B is less than the width Wxa of the first recess 4A. Further, the width Wy of the second groove 6 is also smaller than the width Wxa of the first recess 4A. The depth Dxa of the first recessed portion 4A, the depth Dxb of the second recessed portion 4B, and the depth Dy of the second groove 6 satisfy the following relationship: & T-Dxb^Dxa-f Dy<T (2), formed in this manner The first groove 4 and the second groove 6. The size of the opening of the through hole 8 is defined by the width Wxb of the second recess 4B and the width Wy of the second groove 6. Therefore, the size of the opening of the through hole 8 can be further reduced, and the plasma generated on the side of the first main surface 14 can be prevented from diffusing toward the second main surface 16 side. Further, the second groove 6 may have a rectangular shape, a third recessed portion 6A formed on the second main surface 16 side, and a rectangular fourth recessed portion 6B formed at the bottom of the third recessed portion 6A. The width Wyb of the fourth recessed portion 6B is smaller than the width Wya of the third recessed portion 6A. When the fourth recesses 6β, 14 200924026 are placed in the first groove 4 shown in Fig. 3 or the second recess 4B shown in Fig. 13 to form a through hole, the opening width can be reduced. In this case, it is also possible to suppress the plasma generated on the side of the first main surface 14 from the side of the second main surface 16 (other embodiment). As described above, the present invention has been disclosed by the embodiments of the present invention. However, the description and drawings which form a part of this disclosure are intended to limit the present invention. It will be apparent to those skilled in the art that the embodiments, examples, and application techniques of the ten alternatives of the upper factor r, m are "specified by the appropriate application. [Industrial Applicability] The present invention is applicable. [Electrical Polymerization Process of the Embodiment of the Present Invention] FIG. 2 is a plan view showing an example of a plasma process electrode according to an embodiment of the present invention. 3 is a schematic cross-sectional view showing a cross section along a line of the cathode shown in FIG. 2. FIG. 4 is a schematic cross-sectional view showing a cross section of the cathode shown in FIG. 2 along a station line. FIG. The outline of the cross section along the CC line of the cathode shown in Fig. 2 is a schematic view of the cross section along the D_D line of the cathode shown in Fig. 2. Fig. 7 is a view showing another example of the cathode according to the embodiment of the present invention. Fig. 8 is a plan view showing another example of the cathode according to the embodiment of the present invention. Fig. 9 is a plan view showing another example of the cathode according to the embodiment of the present invention. Fig. 10 is a view showing another example of the cathode according to the embodiment of the present invention. Plane Fig. 11 is a cross-sectional view showing another example of the cathode according to the embodiment of the present invention. Fig. 12 is a plan view showing another example of the cathode according to the embodiment of the present invention. Fig. 13 is a view showing the cathode of Fig. 12 along the EE. Fig. 14 is a schematic cross-sectional view showing a cross section along the FF line of the cathode shown in Fig. 12. Fig. 15 is a cross-sectional view showing another example of the cathode according to the embodiment of the present invention. 4, 4a, 4b: first groove 4A: first recess 4B: second recess 6, 6a, 6b: second groove 6 A · third recess 16 200924026 6B : fourth recess 8 , 8 a : through hole 10 10a: cathode • 12: anode 14: first main surface 16: second main surface 22: substrate f 40: processing chamber 44, 50: piping 46: power supply 52: shower head
Dx、Dy、Dxa、Dxb :深度 Px、Py :間距 T :厚度Dx, Dy, Dxa, Dxb: Depth Px, Py: Spacing T: Thickness
Wx、Wy、Wxa、Wxb、Way、Wyb :寬度 17Wx, Wy, Wxa, Wxb, Way, Wyb: Width 17