TW200913292A - Multi-junction solar cells and methods and apparatuses for forming the same - Google Patents
Multi-junction solar cells and methods and apparatuses for forming the same Download PDFInfo
- Publication number
- TW200913292A TW200913292A TW097128158A TW97128158A TW200913292A TW 200913292 A TW200913292 A TW 200913292A TW 097128158 A TW097128158 A TW 097128158A TW 97128158 A TW97128158 A TW 97128158A TW 200913292 A TW200913292 A TW 200913292A
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- Prior art keywords
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- germanium layer
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Links
- 238000000034 method Methods 0.000 title claims abstract description 93
- 238000005137 deposition process Methods 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 639
- 229910052732 germanium Inorganic materials 0.000 claims description 338
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 338
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 168
- 239000007789 gas Substances 0.000 claims description 166
- 239000000758 substrate Substances 0.000 claims description 163
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 140
- 239000001257 hydrogen Substances 0.000 claims description 122
- 229910052739 hydrogen Inorganic materials 0.000 claims description 122
- 230000008021 deposition Effects 0.000 claims description 81
- 239000000203 mixture Substances 0.000 claims description 60
- 239000010408 film Substances 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 12
- 239000004575 stone Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 238000010790 dilution Methods 0.000 claims description 9
- 239000012895 dilution Substances 0.000 claims description 9
- -1 nitrogen lanthanide Chemical class 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
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- 229910000858 La alloy Inorganic materials 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
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- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
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- 238000000151 deposition Methods 0.000 description 98
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- 239000012159 carrier gas Substances 0.000 description 24
- 230000004888 barrier function Effects 0.000 description 23
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 22
- 229910052707 ruthenium Inorganic materials 0.000 description 22
- 125000004429 atom Chemical group 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 17
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 14
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 12
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- 239000002184 metal Substances 0.000 description 11
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- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 230000005611 electricity Effects 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 230000003068 static effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
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- 150000002431 hydrogen Chemical class 0.000 description 3
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- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229940071182 stannate Drugs 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XBZYWSMVVKYHQN-MYPRUECHSA-N (4as,6as,6br,8ar,9r,10s,12ar,12br,14bs)-10-hydroxy-2,2,6a,6b,9,12a-hexamethyl-9-[(sulfooxy)methyl]-1,2,3,4,4a,5,6,6a,6b,7,8,8a,9,10,11,12,12a,12b,13,14b-icosahydropicene-4a-carboxylic acid Chemical compound C1C[C@H](O)[C@@](C)(COS(O)(=O)=O)[C@@H]2CC[C@@]3(C)[C@]4(C)CC[C@@]5(C(O)=O)CCC(C)(C)C[C@H]5C4=CC[C@@H]3[C@]21C XBZYWSMVVKYHQN-MYPRUECHSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- FWGHIBOKOKUEIT-UHFFFAOYSA-N ruthenium tetrahydride Chemical compound [RuH4] FWGHIBOKOKUEIT-UHFFFAOYSA-N 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- CBIYWHCPXHKZME-UHFFFAOYSA-J tetrafluororuthenium Chemical compound [F-].[F-].[F-].[F-].[Ru+4] CBIYWHCPXHKZME-UHFFFAOYSA-J 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
- H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US95160807P | 2007-07-24 | 2007-07-24 | |
| US98240007P | 2007-10-24 | 2007-10-24 | |
| US12/110,120 US20080223440A1 (en) | 2007-01-18 | 2008-04-25 | Multi-junction solar cells and methods and apparatuses for forming the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200913292A true TW200913292A (en) | 2009-03-16 |
Family
ID=40281799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097128158A TW200913292A (en) | 2007-07-24 | 2008-07-24 | Multi-junction solar cells and methods and apparatuses for forming the same |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2171759A1 (fr) |
| JP (1) | JP2010534938A (fr) |
| KR (1) | KR101019273B1 (fr) |
| CN (1) | CN101542745B (fr) |
| TW (1) | TW200913292A (fr) |
| WO (1) | WO2009015213A1 (fr) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI405343B (zh) * | 2009-09-09 | 2013-08-11 | Univ Nat Pingtung Sci & Tech | 具有高光電轉換效率之可撓式太陽能電池及其製備方法 |
| TWI407578B (zh) * | 2009-12-31 | 2013-09-01 | Metal Ind Res Anddevelopment Ct | Chemical vapor deposition process |
| TWI415278B (zh) * | 2010-02-11 | 2013-11-11 | Nexpower Technology Corp | 具有多層結構的薄膜太陽能電池 |
| TWI415137B (zh) * | 2009-12-17 | 2013-11-11 | Macronix Int Co Ltd | 區域字元線驅動器 |
| TWI459571B (zh) * | 2009-12-29 | 2014-11-01 | Epistar Corp | 太陽能光電元件 |
| TWI467782B (zh) * | 2011-06-21 | 2015-01-01 | Asiatree Technology Co Ltd | 薄膜太陽能電池 |
| TWI511316B (zh) * | 2015-02-13 | 2015-12-01 | Neo Solar Power Corp | 異質接面太陽能電池及其製造方法 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009059238A1 (fr) * | 2007-11-02 | 2009-05-07 | Applied Materials, Inc. | Traitement au plasma entre des procédés de dépôt |
| FR2949237B1 (fr) * | 2009-08-24 | 2011-09-30 | Ecole Polytech | Procede de nettoyage de la surface d'un substrat de silicium |
| KR100989615B1 (ko) * | 2009-09-02 | 2010-10-26 | 엘지전자 주식회사 | 태양전지 |
| CN102741451A (zh) * | 2010-02-10 | 2012-10-17 | 欧瑞康太阳能股份公司(特吕巴赫) | 制造太阳能电池板的方法 |
| CN102194903B (zh) * | 2010-03-19 | 2013-07-31 | 晶元光电股份有限公司 | 一种具有渐变缓冲层太阳能电池 |
| JP5540431B2 (ja) * | 2010-07-30 | 2014-07-02 | 国立大学法人東北大学 | 光電変換部材 |
| KR101143477B1 (ko) * | 2011-01-28 | 2012-05-22 | (재)나노소자특화팹센터 | 유기 태양전지 및 그 제조 방법 |
| KR101573029B1 (ko) * | 2011-02-23 | 2015-12-03 | 한국전자통신연구원 | 박막 태양전지 및 그의 제조방법 |
| JP5409675B2 (ja) * | 2011-03-08 | 2014-02-05 | 三菱電機株式会社 | 薄膜太陽電池およびその製造方法 |
| US20150136210A1 (en) * | 2012-05-10 | 2015-05-21 | Tel Solar Ag | Silicon-based solar cells with improved resistance to light-induced degradation |
| CN105470339A (zh) * | 2014-08-08 | 2016-04-06 | 上海建冶环保科技股份有限公司 | 一种纳米硅薄膜多结太阳能电池 |
| DE102015015017A1 (de) * | 2015-11-19 | 2017-05-24 | Institut Für Solarenergieforschung Gmbh | Solarzelle und Verfahren zur Herstellung einer Solarzelle mit mehreren durch ladungsträgerselektive Kontakte miteinander verbundenen Absorbern |
| CN105489669B (zh) * | 2015-11-26 | 2018-10-26 | 新奥光伏能源有限公司 | 一种硅异质结太阳能电池及其界面处理方法 |
| CN108475707B (zh) * | 2015-12-24 | 2021-09-07 | 株式会社钟化 | 光电转换装置的制造方法 |
| KR101879363B1 (ko) * | 2017-01-17 | 2018-08-16 | 엘지전자 주식회사 | 태양 전지 제조 방법 |
| CN111640816B (zh) * | 2020-06-10 | 2025-07-08 | 通威太阳能(金堂)有限公司 | 异质结太阳能电池片、叠瓦组件及制造方法 |
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| US5256887A (en) * | 1991-07-19 | 1993-10-26 | Solarex Corporation | Photovoltaic device including a boron doping profile in an i-type layer |
| US5730808A (en) * | 1996-06-27 | 1998-03-24 | Amoco/Enron Solar | Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates |
| JP3581546B2 (ja) * | 1997-11-27 | 2004-10-27 | キヤノン株式会社 | 微結晶シリコン膜形成方法および光起電力素子の製造方法 |
| JPH11354820A (ja) * | 1998-06-12 | 1999-12-24 | Sharp Corp | 光電変換素子及びその製造方法 |
| JP4335351B2 (ja) * | 1999-02-26 | 2009-09-30 | 株式会社カネカ | シリコン系薄膜光電変換装置の製造方法 |
| JP2002033499A (ja) | 2000-07-18 | 2002-01-31 | Sanyo Electric Co Ltd | 光起電力装置 |
| EP1650812B2 (fr) * | 2003-07-24 | 2019-10-23 | Kaneka Corporation | Méthode de fabrication d'une cellule photovoltaïque à base de silicium en couches minces |
| JP2006269607A (ja) * | 2005-03-23 | 2006-10-05 | Canon Inc | 光起電力素子の製造方法 |
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2008
- 2008-07-23 EP EP08782269A patent/EP2171759A1/fr not_active Withdrawn
- 2008-07-23 KR KR1020087026072A patent/KR101019273B1/ko not_active Expired - Fee Related
- 2008-07-23 CN CN2008800001789A patent/CN101542745B/zh not_active Expired - Fee Related
- 2008-07-23 JP JP2010518358A patent/JP2010534938A/ja not_active Withdrawn
- 2008-07-23 WO PCT/US2008/070900 patent/WO2009015213A1/fr not_active Ceased
- 2008-07-24 TW TW097128158A patent/TW200913292A/zh unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI405343B (zh) * | 2009-09-09 | 2013-08-11 | Univ Nat Pingtung Sci & Tech | 具有高光電轉換效率之可撓式太陽能電池及其製備方法 |
| TWI415137B (zh) * | 2009-12-17 | 2013-11-11 | Macronix Int Co Ltd | 區域字元線驅動器 |
| TWI459571B (zh) * | 2009-12-29 | 2014-11-01 | Epistar Corp | 太陽能光電元件 |
| TWI407578B (zh) * | 2009-12-31 | 2013-09-01 | Metal Ind Res Anddevelopment Ct | Chemical vapor deposition process |
| TWI415278B (zh) * | 2010-02-11 | 2013-11-11 | Nexpower Technology Corp | 具有多層結構的薄膜太陽能電池 |
| TWI467782B (zh) * | 2011-06-21 | 2015-01-01 | Asiatree Technology Co Ltd | 薄膜太陽能電池 |
| TWI511316B (zh) * | 2015-02-13 | 2015-12-01 | Neo Solar Power Corp | 異質接面太陽能電池及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101542745B (zh) | 2013-03-06 |
| KR20090035471A (ko) | 2009-04-09 |
| KR101019273B1 (ko) | 2011-03-07 |
| EP2171759A1 (fr) | 2010-04-07 |
| JP2010534938A (ja) | 2010-11-11 |
| WO2009015213A1 (fr) | 2009-01-29 |
| CN101542745A (zh) | 2009-09-23 |
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