[go: up one dir, main page]

TW200919883A - Opto-electronic semiconductor chip with quantum-well structure - Google Patents

Opto-electronic semiconductor chip with quantum-well structure Download PDF

Info

Publication number
TW200919883A
TW200919883A TW097135404A TW97135404A TW200919883A TW 200919883 A TW200919883 A TW 200919883A TW 097135404 A TW097135404 A TW 097135404A TW 97135404 A TW97135404 A TW 97135404A TW 200919883 A TW200919883 A TW 200919883A
Authority
TW
Taiwan
Prior art keywords
quantum well
layer
well layer
component
layers
Prior art date
Application number
TW097135404A
Other languages
English (en)
Chinese (zh)
Inventor
Adrian Stefan Avramescu
Georg Bruederl
Christoph Eichler
Alfred Lell
Christian Rumbolz
Marc Schillgalies
Uwe Strauss
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200919883A publication Critical patent/TW200919883A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
TW097135404A 2007-09-18 2008-09-16 Opto-electronic semiconductor chip with quantum-well structure TW200919883A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007044439.9A DE102007044439B4 (de) 2007-09-18 2007-09-18 Optoelektronischer Halbleiterchip mit Quantentopfstruktur

Publications (1)

Publication Number Publication Date
TW200919883A true TW200919883A (en) 2009-05-01

Family

ID=40260641

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097135404A TW200919883A (en) 2007-09-18 2008-09-16 Opto-electronic semiconductor chip with quantum-well structure

Country Status (3)

Country Link
DE (1) DE102007044439B4 (fr)
TW (1) TW200919883A (fr)
WO (1) WO2009036730A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102315344A (zh) * 2010-07-09 2012-01-11 Lg伊诺特有限公司 发光器件、发光器件封装和包括其的发光系统
CN102751393A (zh) * 2011-04-20 2012-10-24 新世纪光电股份有限公司 发光二极管结构
TWI584495B (zh) * 2015-06-18 2017-05-21 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor components

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009015569B9 (de) 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102009040438A1 (de) * 2009-07-24 2011-01-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper mit einer Quantentopfstruktur
DE102012217681A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zum Betreiben eines optoelektronischen Bauteils
DE102013104351B4 (de) 2013-04-29 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips
CN105226145B (zh) * 2014-06-23 2019-05-31 中国科学院物理研究所 量子阱结构、发光二极管外延结构及发光二极管
DE102016101046B4 (de) * 2016-01-21 2024-09-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102019100625A1 (de) * 2019-01-11 2020-07-16 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit mehrfach-quantentopfstruktur und optoelektronische halbleitervorrichtung

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3226070B2 (ja) * 1993-10-04 2001-11-05 キヤノン株式会社 半導体光素子
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
FR2747485B1 (fr) 1996-04-15 1998-05-15 France Telecom Structure a puits quantiques notamment pour composants actifs en onde guidee insensibles a la polarisation et de grande puissance de saturation et composant comprenant cette structure
US5719894A (en) 1996-09-25 1998-02-17 Picolight Incorporated Extended wavelength strained layer lasers having nitrogen disposed therein
JP3854693B2 (ja) * 1996-09-30 2006-12-06 キヤノン株式会社 半導体レーザの製造方法
JP3433038B2 (ja) * 1997-02-24 2003-08-04 株式会社東芝 半導体発光装置
US6570179B1 (en) * 1998-01-14 2003-05-27 Mp Technologies, Llc III-V semiconductors separate confinement superlattice optoelectronic devices
JPH11251685A (ja) 1998-03-05 1999-09-17 Toshiba Corp 半導体レーザ
FR2784515B1 (fr) * 1998-10-07 2000-11-10 Commissariat Energie Atomique Laser a semiconducteur a spectre de gain accordable
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6897484B2 (en) * 2002-09-20 2005-05-24 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and manufacturing method thereof
US20040179566A1 (en) * 2003-03-11 2004-09-16 Aharon El-Bahar Multi-color stacked semiconductor lasers
JP4412918B2 (ja) 2003-05-28 2010-02-10 シャープ株式会社 窒化物半導体発光素子及びその製造方法
JPWO2005020396A1 (ja) 2003-08-26 2006-10-19 ソニー株式会社 ＧａＮ系ＩＩＩ−Ｖ族化合物半導体発光素子及びその製造方法
US7138648B2 (en) 2003-12-17 2006-11-21 Palo Alto Research Center Incorporated Ultraviolet group III-nitride-based quantum well laser diodes
KR100649749B1 (ko) * 2005-10-25 2006-11-27 삼성전기주식회사 질화물 반도체 발광 소자

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102315344A (zh) * 2010-07-09 2012-01-11 Lg伊诺特有限公司 发光器件、发光器件封装和包括其的发光系统
CN102315344B (zh) * 2010-07-09 2015-11-25 Lg伊诺特有限公司 发光器件、发光器件封装和包括其的发光系统
CN102751393A (zh) * 2011-04-20 2012-10-24 新世纪光电股份有限公司 发光二极管结构
TWI584495B (zh) * 2015-06-18 2017-05-21 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor components

Also Published As

Publication number Publication date
WO2009036730A2 (fr) 2009-03-26
DE102007044439A1 (de) 2009-03-19
DE102007044439B4 (de) 2022-03-24
WO2009036730A3 (fr) 2009-08-06

Similar Documents

Publication Publication Date Title
TW200919883A (en) Opto-electronic semiconductor chip with quantum-well structure
JP5112511B2 (ja) 放射線放出半導体ボディ
US8987755B1 (en) Ultraviolet light emitting diode structures and methods of manufacturing the same
JP5404628B2 (ja) 多重量子井戸構造を有するオプトエレクトロニクス半導体チップ
US9263632B2 (en) Semiconductor light emitting device
US9059356B1 (en) Laterally injected light-emitting diode and laser diode
US8525203B2 (en) Semiconductor light emitting device
JP2012165002A (ja) 窒化物系発光ヘテロ構造
TW201135968A (en) Semiconductor chip
US9024293B2 (en) Semiconductor light emitting device
JP2009278088A (ja) 変調ドープ活性層を備えた発光デバイス
CN106415860A (zh) 氮化物半导体发光元件
JP2016111131A (ja) 周期利得活性層を有する窒化物半導体発光素子
US10522699B2 (en) Optoelectronic semiconductor chip
CN109428264A (zh) 具有低阀值电流的半导体激光二极管
US8704268B2 (en) Semiconductor light emitting device
JP4636022B2 (ja) 半導体発光素子及びその製造方法
JP5337862B2 (ja) 半導体発光素子
KR101303589B1 (ko) 질화물계 반도체 발광 소자 및 그의 제조 방법
KR101373804B1 (ko) 백색 발광다이오드 및 그 제조방법
JP5554387B2 (ja) 半導体発光素子
JP5764184B2 (ja) 半導体発光素子
JP2024058791A (ja) 垂直共振器型発光素子
JP2011023398A (ja) 半導体発光素子
KR20130126369A (ko) 정공 전달 효율을 향상시킨 구조를 지닌 반도체 발광 소자