200919883 九、發明說明： 【發明所屬之技術領域】 本專利申請案主張德國專利申請案DE 1 0 2007 044 439.9 之優先權，其已揭示的整個內容在此一倂作爲參考。 本發明涉及一種具有量子井結構之光電半導體晶片。 【先前技術】 具有量子井結構之光電半導體晶片例如在文件DE 1 99 5 5 747 A1中已爲人所知。 【發明內容】 本發明的目的是提供一種具有量子井結構之光電半導體 晶片；其效率及/或壽命已獲得改良。 _ 上述目的藉由申請專利範圍第1項之光電半導體晶片來 達成。本發明之光電半導體晶片之有利的佈置及其它形式 描述在申請專利範圍各附屬項中，其已揭示的內容藉由參 考而收納於說明書中。 ί , 本發明提供一種光電半導體晶片，其具有一種發出輻射 之半導體層序列。此發出輻射的半導體層序列包含一活性 區，其具有一第一量子井層，一第二量子井層以及二個終 端-位障層。第一和第二量子井層配置在二個終端-位障層之 間。換言之’該活性區配置在一個η -摻雜層或層序列和一 個Ρ -摻雜層或層序列之間。在η -摻雜層/層序列至ρ -摻雜層 /層序列之方向中’有一終端-位障層位於第一和第二量子井 層之前且在由η-摻雜的半導體層至Ρ-摻雜之半導體之方向 200919883 中另一終端-位障層位於第一和第二量子井層之 第一和第二量子井層在與各終端層比較下具 目匕帶間隙。該活性區因此具有一量子井結構’ 式量子井結構，其含有至少一第一和第二量子 個終端-位障層。此處，未提及能量狀態由於量 端-位障層所造成的量子化之維度。藉由量子井 外可獲得至少一量子膜、量子線及/或量子點以 之每一種組合。 活性區之量子井結構用來在半導體晶片操作 輻射。光電半導體晶片較佳是用來發出雷射輻 一種例如邊緣發射式雷射二極體晶片。 發出輻射之半導體層序列特別是一種藉由磊 製成的半導體層序列。在層生長中，通常依序; 層/層序列、活性區和P-導電層/層序列。於此， /層序列至P-摻雜層/層序列之方向簡稱爲“生I 而，此處須指出，例如在具有一穿隧接面之半導 目前稱爲“生長方向”的方向亦可與層生長的 反而延伸。 在生長方向中，有一終端層位於第一和第二 前，另一終端層在生長方向中跟隨在第一和第 之後。終端層和第一、第二量子井層之主延伸 直於生長方向。第一和第二量子井層、二個終 個活性區可適當地具有平行的主延伸面。 有一較小的 特別是多重 井層以及= 子井層和終 結構，則另 及這些結構 時產生電磁 射且較佳是 晶層生長所 製成η-導電 由η-摻雜層 ^方向”。然 :體晶片中， 實際方向相 量子井層之 二量子井層 面特別是垂 端層以及整 200919883 活性區具有一種半導體材料，其包含至少一第一和〜第 一成份。例如，活性區具有一種丨丨丨_ v _化合物_半導體材料’ 例如，一種氮化物-化合物-半導體材料，其例如可爲 I n A1G a N，或活性區亦可具有一種磷化物_化合物-半導髀材 料。另一方式是’活性區可具有一種II/VI_化合物_半導體 材料。例如’該半導體材料含有銦以作爲第一成份及/或含 有GaN，A1N及/或AlGaN以作爲第二成份。 一種III-V-化合物-半導體材料具有至少一第三族（例如’ B，Al，Ga，In)的元素和一第五族（例如，n，p，As)之元素。 特別是此槪念“III-V-化合物-半導體材料’，包含二元、三元 或四兀化合物之基（group)，其包含至少—第三族的元素和 至少一第五族之元素，例如，其可爲氮化物-和磷化物-化合 物半導體。此種二元、三元或四元化合物另外例如可具有 一種或多種摻雜物質以及其它的成份。 同理’ II/VI-化合物-半導體材料具有至少一第二族（例 如’ Be，Mg，Ca，Sr)的元素和一第六族（例如，〇，s，Se)之元 素。特別是此“ 11 / VI -化合物-半導體材料”包含二元、三元 或四元化合物’其具有至少一第二族的元素和至少一第六 族之元素。此種二元、三元或四元化合物另外例如可具有 一種或多種摻雜物質以及其它的成份。例如，以下的材料 屬於II/VI-化合物-半導體材料：ZnO, ZnMgO，CdS，ZnCdS, M g B e 〇。 活性區具有氮化物-化合物半導體材料在意義上是指，該 -7- 200919883 活性區或該活性區之至少一部份具有氮化物-化合物半導體 材料，較佳是111|1八1111〇311_1111\1或由111。八111,〇31.|1.„,1^所構成，：§： 中0SnSl，0Sm$l且n + mSl。於此，此材料未必含有上 述形式之以數學所表示之準確的組成。反之，其可$有· _ 種或多種摻雜物質以及其它成份。然而，爲了簡單之故， 上述形式只含有晶格（Al，Ga，In，N)之主要成份，這些主要 成份之一部份亦可由少量的其它物質來取代及/或補充。 上述二個終端-位障層之半導體材料中第一成份之量小於 第一成份在第一和第二量子井層中之量。半導體材料之第 一成份特別是用來調整半導體材料之能帶間隙。 在上述光電半導體晶片之一實施形式中，第二量子#層 在與第一量子井層比較下具有較小的層厚度。本實施形式 中’第二量子井層所具有的半導體材料之第一成份較佳是 多於第一量子井層中者。 在另一實施形式中，第二量子井層之層厚度等於或大於 第一量子井層的層厚度。本實施形式中，第二量子井層所 具有的半導體材料之第一成份少於第一量子井層中者。 在一種實施形式中，第一和第二量子井層都用來發出電 磁輕射。例如，第一量子井層在生長方向中位於第二量子 井層之即且具有較小的層厚度。第一量子井層所具有的半 導體材料之第〜成份可適當地多於第二量子井層中者。 由第一量子井層所定義的量子井和第二量子井層所定義 的量子井之能羹位準可有利地藉由層厚度和半導體材料之 200919883 第一成份之量來互相調整，使第一量子井層和第二量子井 層相對於光電半導體晶片之總發射量之貢獻位於同一數量 級中且特別是實際上相等。 在一有利的另一形式中，第一量子井層之區域中所發出 的電磁輻射以及第二量子井層之區域中所發出的電磁轄射 基本上具有相同的光譜分佈，特別是光譜分佈之強度最大 値具有相同的波長。 當第一量子井層在生長方向中位於第二量子井層之前且 所具有的層厚度小於第二量子井層之層厚度時，則半導體 層序列可有利地具有一種高的晶體品質。此外，在與二個 量子井層具有相同的層厚度且所具有的半導體材料之第— 成份之量亦相等日^的情況相比較下，電荷載體至第一及/或 第二量子井層的注入現象亦可獲得改良。 在另一實施形式中’第二量子井層用來發出電磁輻射， 但第一量子井層不是用來發出電磁輻射。 不是用來發出電_ $旨射的量子井層在該光電半導體晶片 操作時未發出電磁輻射或該不是用來發出電磁輻射之量子 井層之區域中所發出的電磁輻射之量在與該用來發出電磁 輻射之量子井層之區域中所發出的電磁輻射之量相比之下 較小。例如’該不是用來發出電磁輻射之量子井層之區域 中所發出的電^ _射之量最多是該用來發出電磁輻射之量 子井層之區域中所發出的電磁輻射之量的一半，較佳是最 多五分之一’特別是最多十分之一。 200919883 在上述實施形式之一種適當的佈置中’第二量子井層所 具有的層厚度小於第一量子井層之層厚度，且第二量子井 層配置在第一量子井層之內部中。換言之，在生長方向中 第一量子井層之第一部份，第二量子井層和第一量子井層 之第二部份直接重疊著。第一量子井層之第一部份和第二 部份因此直接與第二量子井層相鄰接。 在此種佈置中，可有利地達成一特別有效的電荷載體捕 捉作用。特別是雷射二極體晶片可在操作時以所發出的雷 Γ — 射輻射之波長較長的強度最大値來達成電荷載體的捕捉作 用’該強度最大値例如可具有4 6 0 n m以下之波長，例如， 此波長位於藍色或綠色光譜範圍中。 在上述實施形式的一種變異形中，第二量子井層配置於 第一量子井層之內部中，第二量子井層所具有的半導體材 料的第一成份之量小於第一量子井層中者。在此種變異形 中’第一量子井層用來發出電磁輻射，第二量子井層不是 I: 用來發出電磁輸射。相較於第二量子井層省略時的一種實 施形式而言，上述變異形中該半導體層序列具有較佳的晶 體品質’使該半導體層序列之光學特性和電性獲得改良。 在光電半導體晶片之另一實施形式中，第一量子井層在 操作時用來發出電磁輻射，但第二量子井層不是用來發出 電te輸射。第二量子井層在生長方向中例如位於第一量子 井層之前或位於第一量子井層之後。 藉由第二量子井層或多個第二量子井層，其具有較第一 -10- 200919883 量子井層速小的層厚度及具有半導體材料之更多的 份、或具有較第一量子井層更大或相同的層厚度及 導體材料之較少的第〜成份，則半導體材料之第一 第一量子井層中的分佈可特別均勻。第一量子井層 陷（例如，鎵-空缺）數目可特別少，使重組時未發出 電荷載體對（P a 1 r)之數目可特別少。此外，特別是一 種摻雜物質擴散至第〜量子井層中的數量亦特別少 導體晶片具有一特別高的壽命。 在一種佈置中’該光電半導體晶片具有二個第一 層和至少一個第二量子井層。該第二量子井層或多 量子井層配置在該二個第一量子井層之間。 例如，至少一個第二量子井層可使電荷載體在該 一量子井層之間的穿燧機率提高。因此，可在該二 發出輻射的第一量子井層上達成一特別均勻的電荷 佈。 在上述佈置的另一形式中，至少一第二量子井層 方向中位於後方之第一量子井層之距離小於至生長 位於前方之第一量子井層之距離。例如，至生長方 於後方之第一量子井層之距離只有至生長方向中位 之第一量子井層之距離之一半以下，例如，四分之- 特別是在像InAlGaN之類的半導體材料中，其具 纖鋅礦（Wurtzit)結構，這會產生一種壓電場，其將對 體造成一種能量位障而使電荷載體不易注入至第一 第一成 具有半 成份在 中的缺 輻射的 種或多 ，使半 量子井 個第二 二個第 個用來 載體分 至生長 方向中 向中位 於前方 *以下。 有一種 電荷載 量子井 -11- 200919883 層中。較靠近該生長方向中位於後方之第一量子井層而配 置的第二量子井層可有利地使電荷載體之能量位障減小。 在另一佈置方式中’該光電半導體晶片具有至少一第一 量子井層和二個第二量子井層’其中至少一第一量子井層 配置在該二個第二量子井層之間。在另一種形式中，至少 一第一量子井層配置在第一數目-和第二數目的第二量子井 層之間。換言之，第一數目的第二量子井層在生長方向中 位於該至少一第一量子井層之前，且第二數目的第二量子 井層在生長方向中位在該至少一第一量子井層之後。 第一數目的第二量子井層和第二數目的第二量子井層較 佳是含有相同數目的第二量子井層。換言之，該至少一第 一量子井層在生長方向之前的第二量子井層之數目較佳是 與該至少一第一量子井層在生長方向之後的第二量子井層 之數目相同。 在上述的佈置中’由該至少一第一量子井層所發出的電 磁輻射可特別良好地導入至活性區中。例如，藉由第二量 子井層可使活性區之折射率提高。該至少一第一量子井層 和由該活性區所發出之電磁輻射之間的空間上的重疊特別 大’因此在操作時可特別有效地發出雷射輻射。 第二量子井層可優先定義量子井結構，其能量位準是與 由該至少一第一量子井層所定義之量子井結構之能量位準 不同。以此種方式’則由該至少一第一量子井層所發出的 電磁輻射在第二量子井層之區域中被吸收的危險性即可下 -12- 200919883 降 在上述具有一第一數目-和一第二數目之第二量子井層之 半導體晶片之另一形式中，半導體材料之第一成份之量及/ 或第二量子井層之層厚度在離開該至少一第一量子井層之 方向中逐層地減少。換言之，在二個第二量子井層中，其 中一個位於該至少一第一量子井層之前，另一個位於該至 少一第一量子井層之後，與該至少一第一量子井層之距離 較小的第二量子井層所具有的半導體材料之第一成份 較大及/或所具有的層厚度較大。因此，可有利地_ _ 晶體結構特別良好的活性區。 在一種佈置中，該活性區具有一種對稱平面，卑 該活性區之主延伸面而延伸，即，特別是垂直於生<契 而延伸。此種佈置中該活性區含有多個第一-及/或兔 ^ 1¾ 量子井層。第一量子井層和第二量子井層相對於鉍 ^ % 面成鏡面對稱而配置著。此種鏡面對稱的配置例如 % 地將雷射輻射導入至雷射二極體晶片之活性區中。 θ刊 在具有一第二量子井層之半導體晶片之另一佈f 中第 量子井層之半導體材料之第一成份之量是第 量子井層之層厚度小於第一量子井層之層續 考 第一麗子井層之半導體材料之第一成份之量是第\ 員1J % 層者之1.2倍至2倍。在另—形式中，其中第二量禾 许 層厚度等於或大於第一量子井層之層厚度，則第 層之半導體材料之第一成份之量是第二量子井層 倍至2倍。 幾 % -13- 200919883 在另一佈置中，第一-和第二量子井層之層厚度相異的程 度大於或等於2倍。例如，一第二量子井層之層厚度小於 第一量子井層之層厚度，此一第二量子井層之層厚度最多 是第一量子井層之層厚度之一半，較佳是三分之一，特別 佳時是四分之一。例如，第一量子井層之層厚度是在2和 10nm之間，特別是在2nm(含）和5nm(含）之間。第二量子井 層之層厚度是在0.5和5nm之間，較佳是在0.5nm(含）和 2nm(含）之間，例如，inm。 在一種佈置中’第一-及/或第二量子井層之半導體材料含 有周期表中相同的族（第三族）之至少二個不同的元素，其中 個兀素包含在半導體材料之第一成份中且另一個元素包 含在半導體材料之第二成份中。該族之包含在第一成份中 的兀素之量介於該半導體材料中該族之此一元素之0.5 %至 50%之間。 例如’上述之第—成份是銦。第二成份例如是GaN，A1N 或AlGaN ’其含有鎵及/或鋁，此二個元素就像銦—樣屬於 周期表之第三族。在另一形式中，銦在半導體材料 In"AlmGai_"_mN 中所具有的量是 0.05S nS 0.5。 在另一形武中’半導體晶片用來發出一強度最大値是在 監色光s普區中之電磁輻射，且第一量子井層之半導體材料 具有一種0.15$η$〇.2之銦成份。在另一形式中，半導體 晶片用來發出一強度最大値是在紫外線光譜區中之電磁輻 射’且弟—籩子井層之半導體材料具有一種0.07 Sns 〇.1 -14- 200919883 之銦成份。 第一-和第二量子井層之間的距離、二個第一量 間的距離及/或二個第二量子井層之間的距離ΐ lnm(含）和50nm(含）之間，較佳是在3nm(含）和15 間。 在一種佈置中，第一-及/或第二量子井層內部中 材料之第一成份之量不是固定値。反之，該第一 f , 是隨著第一-及/或第二量子井層之層厚度而改變。 第一成份的濃度在生長方向中可在第一-或第二量 一部份區域上由邊緣而連續地升高或向邊緣而； 降。換言之，第一成份的濃度外形（pr〇flle)具有一 傾斜的邊緣。所謂半導體材料之第一成份之量在 下是指該量子井層內部中該量之最大値。 在另一種佈置中，該光電半導體晶片設計成在 出一種強度最大値是在紫外線-及/或藍色光譜區 U 輻射。在另一形式中，該強度最大値位於藍色光 活性區含有二個用來產生輻射之第一量子井層。 同形式中，該強度最大値位於紫外線光譜區中且 有四個用來產生輻射之第一量子井層。在另一種 該半導體晶片是雷射二極體晶片·。 本發明之光電半導體晶片之其它優點、有利的 和其它形式將描述於下述與第1至11B圖有關之 施例中。 子井層之 网如是在 n m (含）之 該半導體 成份之量 例如，該 子井層之 軎續地下 個或二個 此種情況 操作時發 中之電磁 譜區中且 在另一不 活性區含 佈置中， 實施形式 舉例式實 200919883 【實施方式】 各圖式和實施例中相同-或作用相同的各組件分別設有相 同的元件符號。所示的各元件和各元件之間的比例未必依 比例繪出。反之，爲了清楚及/或更容易理解之故，各圖式 的一些細節（例如，層）已予放大地顯示出或予以加厚。 桌1圖顯不本發明第一實施例之光電半導體晶片的橫切 面’其目前是一種雷射二極體晶片。此半導體晶片具有一 種位於生長基板2上的磊晶半導體層序列1。 此一發出輻射之磊晶半導體層序列例如以一種六角形的 化合物半導體材料爲主’特別是以氮化物_ 111 -化合物半導體 材料爲主。氮化物-III-化合物半導體材料較佳是InAiGaN。 該生長基板2可適當地具有一種適合用來生長上述氮化 物-III-化合物半導體材料之材料。例如，該生長基板2可含 有GaN，SiC及/或監寶石或由這些材料中的至少一種所構 成。在離開該基板2之方向中，半導體層序列1首先具有一 ί 種η ·導電層或層序列1 1 0，然後具有活性區1 2 0以及活性區 之後的Ρ -摻雜層或層序列1 3 〇。 例如’該η -導電之層序列1丨〇具有一（特別是高摻雜之η_ 接雜的）η -接觸層1 1 1，此接觸層1丨丨例如含有G aN，其以一 種η -摻雜物質（例如，砂）來摻雜。 另一 η-導電層，例如，一種以n —摻雜物質（例如，矽）來摻 雜之GaN-或InGaN-層1 12，跟隨在該η•接觸層1 η之後。 例如，該層1 1 2 τη種電流擴散層，其具有高的橫向導電性。 -16- 200919883 此外’半導體層序列1較佳是具有一種電荷載體局限 (confinement)層，在雷射二極體晶片之情況下該局限層是一 種外罩（cl adding)層113。此一外罩層113在生長方向（gp， 特別是離開該生長基板2之方向）中跟隨該η-接觸層1 1 1和 該η-導電層1 1 2。 該η-外罩層113含有一種交替之層對（pair)所形成的超晶 格（super-lattice)。例如，其是一種由一對層AlGaN-層和GaN- r 層所形成的超晶格或由二個鋁含量不同的A1GaN-層所形成 \ 的超晶格。每一對層之至少一層較佳是以一種n —摻雜物質 (例如，矽）來摻雜。 一種η-導電之波導層1 14(例如，一種未摻雜的A1GaN_層） 跟隨著該外罩層。 一·種P -導電層1 3 1 ’例如’一種以p _摻雜物質（例如，鎂） 來摻雜的AlGaN -層，在離開該生長基板的方向中跟隨著該 活性區120。此p-導電層131亦可省略，以便使卜摻雜物質 ί 擴散至活性區1 20中的危險性下降。 此外’該Ρ-導電的層序列130含有一種ρ_波導層η2和 一種Ρ -電荷載體局限層（目前是一種ρ -外罩層丨33)，其在生 長方向中依據重疊著。該Ρ-波導層1 32例如具有未慘雜的 AlGaN’該ρ -外罩層類似於該η -外罩層113而具有—種由一 對層所構成的超晶格結構，其中每一對層例如具有一種以 Ρ-摻雜物質（例如’鎂）來摻雜的AlGaN-層和一未丨參雜的 AlGaN-層。該ρ-外罩層133跟隨在一種p_接觸層134之後， -17- 200919883 此P -接觸層1 3 4例如是一種高摻雜的p _摻雜之G a N -層。 活性區120含有一第一量子井層3和一在生長方向中跟隨 在第一量子井層3之後的第二量子井層4。一種終端-位障 層5 1位於第一量子井層3之前，另一終端-位障層5 1在第 二量子井層4之後。位障層52配置在第一量子井層3和第 二量子井層4之間且將此二個量子井層相隔開。此位障層 52之層厚度大約是5nm。 該終端-位障層5 1、位障層5 2以及第一-和第二量子井層 3、4較佳是未摻雜。終端-位障層5 1及/或位障層5 2之至少 一層及/或第一-和第二量子井層3、4之至少一層在本實施 例中或在另一種佈置中可交替地以n _或p _摻雜物質來摻雜。 第一-和第二量子井層3’ 4不同於位障層51，52之處特 別是該半導體材料之成份。例如，該半導體材料是 I η η A1 m G a m N。此丰導體材料之第—成份（目前是姻）在第 —-和第二量子井層3，4中所具有的量c (一種濃度）大於位 障層5 1 ’ 5 2中者。例如’量子井層3 ’ 4中的銦濃度（gp， 在該組成InnAUGamN中之分量n)較高。 第2Α圖顯示本發明第一實施例之半導體層序列之活性區 之半導體材料之第一成份之濃度外形。此濃度c(目前是銦 濃度）依據以n m爲單位的相對位置X而繪出。該生長方向 在第2A圖中由左向右延伸。濃度c由上向下而而變大，其 因此以任意單位來表示。爲了清楚之故，濃度差異値已過 度地予以顯示。 -18- 200919883 因此’在終端-位障層5 1和位障層5 2中該銦濃度c較小， 例如’在這些層中未含有銦或實際上銦不存在。第一量子 井層3具有最大的銦濃度c。第二量子井層4之銦濃度c大 於位障層51，5 2之銦濃度且小於第一量子井層3之銦濃度 C 0 半導體材料之第一成份之量C，目前是銦濃度C，會影響 該半導體材料之能帶間隙。此能帶間隙因此是由導電帶之 低能量邊緣和價帶之高能量邊緣之間的能量距離來設定。 導電帶之低能量邊緣之外形基本上對應於上述半導體材料 之第一成份的濃度外形’其中能量軸E顯示在與濃度軸c 相反的方向中。第2A圖中該能量E由下向上增加。 導電帶之能量邊緣之外形“基本上”對應於濃度外形， 這表不：各種干擾’例如’半導體材料中壓電場之影響’ 在圖式中未被考慮。由於壓電場，則濃度外形會發生差等 例如’在位障層5 1，5 2之一和相鄰的第一-或第二量子弁層 3，4之間的接面區中會有能量位障。對量子井層3而言， 此種差異在第2 A圖中以虛線來表示。 在第一實施例中’銦含量c等於成份IniiAlmGai.n mN之分 量η，且銦含量c此在第一量子井層3中例如是第二量子井 層4中之1.2倍（含）至2倍（含）。目前大約是2倍。 第一量子井層3之層厚度最多例如等於第二量子井層4 之層厚度的一半。目前，第二量子井層4之層厚度 且大約是第一量子井層3之層厚度的2·5倍。第—量子幷餍 -19- 200919883 3之層厚度大約是2nm。 量子井結構之能量位準是由第一-和第二量子井層3’ 4所 定義，此能量位準是與第一成份的濃度c以及量子井層3 ’ 4之層厚度有關。由第一-和第二量子井層3，4所定義的量 子井基本上具有相同的能量位準。本實施例中’第一量子 井層3和第二量子井層4都是以此種方式來發出輻射之量子 井層。 在第2 A圖之第一實施例中，半導體材料之第一成份的濃 度外形基本上是矩形的。實際上的濃度外形會由於第一成 份的擴散及/或沈積而會與圖不的外形有差異。 在第一實施例之第2 B圖所示的變異形中，未試圖形成銦 濃度c之矩形的外形。反之，第一量子井層3之濃度是 V -形的且第二量子井層4之濃度外形成梯形。在此二個量子 井層3，4中，半導體材料之第一成份之濃度c在層厚度之 大約0.5 nm至lnm寬的範圍中連續地上升。 L 在第一量子井層3中，該上升大約持續至該層的中央處， 由此處開始該濃度c連續地下降且大約對稱於該上升的情 況。在第二量子井層4中，第一成份的濃度c在第二量子井 層之中央區域中基本上是疋値的且在遠離第一量子井層之 此側上陡峭地（實際上是垂直地）下降。 本發明人已確定的事實是’藉由上述V -形-及/或梯形的外 形’則由於六角形的半導體材料中由壓電場所造成的能量 位障對量子井層3 ’ 4中的電荷載體的注入之最不利的影響 -20- 200919883 可被降低。 第3A圖中所示的第二實施例不同於第一實施例之處在 於’活性區120具有二個第一量子井層3，其在生長方向中 重疊著且分別藉由一個位障層5 2而互相隔開。該三個第一 量子井層3用來產生輻射。第一量子井層3例如具有一種大 約4 n m的層厚度。位障層5 2例如大約8 n m厚。 多個（目前是二個）第二量子井層4在生長方向中跟隨在該 三個第一量子井層3之後’即’第二量子井層4在p _側配 置在第一量子井層3之後。第二量子井層4所具有的層厚度 小於第一量子井層3之層厚度（大約是inm)。第二量子井層 4之層厚度例如最多是第一量子井層3之層厚度之一半，較 佳是四分之一。第二量子井層4之銦濃度c之値是在第一量 子井層3之銦濃度c之1.2倍（含）至2倍（含）之間，二個第 二量子井層4藉由位障層而互相隔開，此位障層之層厚度 大約是3nm。 t 另一個位障層5 2配置在第一-和第二量子井層3，4之間， 此位障層52之厚度大約是18nm。 第二量子井層4可有利地使一種p-摻雜物質（例如，鎂） 擴散至用來產生輻射之量子井層3中的危險性下降。 本實施例中，第二量子井層4不是用來產生輻射。由於 與第一量子井層3比較下有較闻的銦濃度c以及較小的層厚 度，則在與由第一量子井層3所定義之量子井之能量位準 來發出電磁輻射相比較下，第二量子井層4之能量位準只 -2 1- 200919883 具有一種很小的機率來發出電磁輻射。一種p-摻雜物質擴 散至第二量子井層4中時因此不會對該半導體晶片之效率 造成影響或只有輕微的影響，使該半導體晶片之壽命特別 高。 每二個互相跟隨的第一量子井層3具有一種距離dl，每 二個互相跟隨的第二量子井層具有一種距離d2。距離d 1特 別是等於位障層5 2之層厚度，該位障層5 2將二個第一量子 井層3互相隔開。距離d2特別是等於位障層52之層厚度， 該位障層52將二個第二量子井層4互相隔開。 距離d 1和d2不須相等。例如，二個第一量子井層3之間 的距離d 1至少是二個第二畺子井層4之間的距離d 2之二 倍。 在第3 B圖所示的第二實施例之變異形中，該二個第二量 子井層4所具有的層厚度大於第一量子井層3之層厚度（其 大約是6nm)。第二量子井層4至第一量子井層3之距離大 約較第3 A圖所示之實施例還小4 n m。各第二量子井層4藉 由位障層5 2而相隔開，該位障層5 2之層厚度d 2同樣是 4nm。配置在二個第一量子井層3之間的位障層52之層厚 度因此是配置在二個第二量子井層4之間的位障層52之層 厚度的二倍。 上述半導體材料之第一成份之量c在第二量子并層4中者 少於第一量子井層3中者。例如，該半導體材料之第一成 份之濃度c在第一量子井層3中者是在第二量子井層4中者 -22- 200919883 之1 .2倍（含）至2倍（含）。 如第二實施例所示，在第3B圖之第一青 宋一貫施例之變異形中 各第二量子井層4不是用來發出電磁輻射。 在第二實施例及其變異形中’該半導體材料之第一成份 在活性區中之量較未具有第二量子井層4時的活性區中的 量還高。以此種方式’在與半導體層序列之在活性區之前 及/或之後設有一種層之情況相比較下，該活性區具有較高 的折射率。該活性區1 20因此特別適合用來作爲該活性题 1 20中所產生的電磁輻射用之波導。在另—種形式中，該半 導體層序列1未設有η -波導層114及/或p_波導層132，各 波導層顯示在第1圖中。。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The present invention relates to an optoelectronic semiconductor wafer having a quantum well structure. [Prior Art] Optoelectronic semiconductor wafers having a quantum well structure are known, for example, from the document DE 1 99 5 5 747 A1. SUMMARY OF THE INVENTION It is an object of the present invention to provide an optoelectronic semiconductor wafer having a quantum well structure; its efficiency and/or lifetime has been improved. _ The above object was achieved by applying the optoelectronic semiconductor wafer of the first patent scope. Advantageous arrangements and other forms of optoelectronic semiconductor wafers of the present invention are described in the accompanying claims, and the disclosure of which is incorporated herein by reference. The invention provides an optoelectronic semiconductor wafer having a sequence of semiconductor layers that emit radiation. The radiation-emitting semiconductor layer sequence includes an active region having a first quantum well layer, a second quantum well layer, and two terminal-level barrier layers. The first and second quantum well layers are disposed between the two terminal-level barrier layers. In other words, the active region is disposed between an η-doped layer or layer sequence and a Ρ-doped layer or layer sequence. In the direction of the η-doped layer/layer sequence to the ρ-doped layer/layer sequence, there is a terminal-position barrier layer before the first and second quantum well layers and in the η-doped semiconductor layer to Ρ - The direction of the doped semiconductor 200919883 Another terminal-position barrier layer is located in the first and second quantum well layers and the first and second quantum well layers have a witness band gap compared to each of the termination layers. The active region thus has a quantum well structure' quantum well structure comprising at least one first and second quantum terminal-position barrier layers. Here, the dimension of the quantization of the energy state due to the end-position barrier layer is not mentioned. At least one quantum film, quantum wire, and/or quantum dot can be obtained by each of the quantum wells. The quantum well structure of the active region is used to operate the radiation on the semiconductor wafer. The optoelectronic semiconductor wafer is preferably used to emit a laser radiation such as an edge-emitting laser diode wafer. The radiation-emitting semiconductor layer sequence is in particular a semiconductor layer sequence made by stretching. In layer growth, usually sequential; layer/layer sequence, active region and P-conductive layer/layer sequence. Herein, the direction of the /layer sequence to the P-doped layer/layer sequence is simply referred to as "life I", and it should be noted here that, for example, the direction of the semi-conductor having a tunnel junction is currently referred to as the "growth direction". It may extend opposite to the growth of the layer. In the growth direction, one terminal layer is located before the first and second, and the other terminal layer follows the first and the second in the growth direction. The terminal layer and the first and second quantum wells The main extension of the layer extends directly to the growth direction. The first and second quantum well layers, the two final active regions may suitably have parallel main extension planes. There is a smaller, in particular multiple, well layer and = sub-well layer and end The structure, in addition to these structures, produces electromagnetic radiation and is preferably grown by crystallization of the η-conducting layer by the η-doping layer. However, in the bulk wafer, the actual quantum phase of the quantum well layer, especially the vertical layer, and the entire 200919883 active region have a semiconductor material comprising at least a first and a first component. For example, the active region has a 丨丨丨_v_compound-semiconductor material', for example, a nitride-compound-semiconductor material, which may be, for example, I n A1G a N, or the active region may also have a phosphide_compound- Semi-conductive material. Alternatively, the 'active region' may have a II/VI compound/semiconductor material. For example, the semiconductor material contains indium as a first component and/or contains GaN, AlN and/or AlGaN as a second component. A III-V-compound-semiconductor material has at least one element of a third group (e.g., 'B, Al, Ga, In) and an element of a fifth group (e.g., n, p, As). In particular, the term "III-V-compound-semiconductor material" includes a group of binary, ternary or tetravalent compounds comprising at least a third group element and at least a fifth group element, For example, it may be a nitride- and phosphide-compound semiconductor. Such a binary, ternary or quaternary compound may, for example, additionally have one or more dopant species and other components. Similarly, 'II/VI-compounds- The semiconductor material has at least a second group of elements (eg, 'Be, Mg, Ca, Sr) and a sixth group (eg, 〇, s, Se) elements. In particular, this "11 / VI - compound-semiconductor material "contains a binary, ternary or quaternary compound" having at least a second group of elements and at least a sixth group of elements. Such a binary, ternary or quaternary compound may, for example, additionally have one or more dopants Substance and other components. For example, the following materials belong to II/VI-compound-semiconductor materials: ZnO, ZnMgO, CdS, ZnCdS, M g B e 〇. The active region has a nitride-compound semiconductor material in the sense that The -7-200919883 activity Or at least a portion of the active region has a nitride-compound semiconductor material, preferably 111|1 8 11 11 311 311 111 1 1 or consists of 111. 八 111, 〇 31.|1. „, 1^, §: 0SnSl, 0Sm$l and n + mSl. Here, the material does not necessarily contain the exact composition of the above form expressed mathematically. Conversely, it can be used with or without one or more dopants and other components. However, for the sake of simplicity, the above form contains only the main components of the crystal lattice (Al, Ga, In, N), and part of these main components may be replaced and/or supplemented with a small amount of other substances. The amount of the first component of the semiconductor material of the two terminal-level barrier layers is less than the amount of the first component in the first and second quantum well layers. The first component of the semiconductor material is used in particular to adjust the band gap of the semiconductor material. In one embodiment of the above optoelectronic semiconductor wafer, the second quantum # layer has a smaller layer thickness compared to the first quantum well layer. The second quantum well layer of the present embodiment preferably has a first component of the semiconductor material that is more than the first quantum well layer. In another embodiment, the layer thickness of the second quantum well layer is equal to or greater than the layer thickness of the first quantum well layer. In this embodiment, the second quantum well layer has a first component of the semiconductor material that is less than the first quantum well layer. In one embodiment, both the first and second quantum well layers are used to emit electromagnetic light. For example, the first quantum well layer is located in the second quantum well layer in the growth direction and has a smaller layer thickness. The first quantum well layer may have a first component of the semiconductor material that is more than the second quantum well layer. The energy level of the quantum well defined by the quantum well and the second quantum well layer defined by the first quantum well layer can be advantageously adjusted by the layer thickness and the amount of the first component of the semiconductor material 200919883, so that The contributions of a quantum well layer and a second quantum well layer relative to the total amount of emission of the optoelectronic semiconductor wafer are in the same order of magnitude and are in particular substantially equal. In an advantageous further form, the electromagnetic radiation emitted in the region of the first quantum well layer and the electromagnetic radiation emitted in the region of the second quantum well layer have substantially the same spectral distribution, in particular the spectral distribution. The maximum intensity has the same wavelength. The semiconductor layer sequence may advantageously have a high crystal quality when the first quantum well layer is in front of the second quantum well layer in the growth direction and has a layer thickness that is less than the layer thickness of the second quantum well layer. In addition, the charge carriers are first to the first and/or second quantum well layers in comparison to the case where the two quantum well layers have the same layer thickness and the amount of the first component of the semiconductor material is equal. The injection phenomenon can also be improved. In another embodiment, the second quantum well layer is used to emit electromagnetic radiation, but the first quantum well layer is not used to emit electromagnetic radiation. The amount of electromagnetic radiation emitted by the quantum well layer that is not used to emit electricity _ $ the shot when the optoelectronic semiconductor wafer is operated without emitting electromagnetic radiation or the quantum well layer that is not used to emit electromagnetic radiation The amount of electromagnetic radiation emitted in the region of the quantum well layer from which electromagnetic radiation is emitted is relatively small. For example, the amount of electricity emitted by the region of the quantum well layer that is not used to emit electromagnetic radiation is at most half the amount of electromagnetic radiation emitted by the quantum well layer used to emit electromagnetic radiation. Preferably, at most one fifth is 'especially up to one tenth. 200919883 In a suitable arrangement of the above embodiments, the second quantum well layer has a layer thickness that is less than the layer thickness of the first quantum well layer and the second quantum well layer is disposed within the interior of the first quantum well layer. In other words, the first portion of the first quantum well layer in the growth direction, the second quantum well layer and the second portion of the first quantum well layer directly overlap. The first and second portions of the first quantum well layer are thus directly adjacent to the second quantum well layer. In such an arrangement, a particularly effective charge carrier trapping effect can advantageously be achieved. In particular, the laser diode wafer can be operated with a maximum intensity of the wavelength of the thunder-radiation radiation to achieve a charge carrier capture. The maximum intensity can be, for example, below 460 nm. The wavelength, for example, is in the blue or green spectral range. In a variant of the above embodiment, the second quantum well layer is disposed in the interior of the first quantum well layer, and the second quantum well layer has a first component of the semiconductor material that is smaller than the first quantum well layer . In this variant, the first quantum well layer is used to emit electromagnetic radiation, and the second quantum well layer is not used to: emit electromagnetic radiation. In contrast to an embodiment in which the second quantum well layer is omitted, the semiconductor layer sequence has a better crystal quality in the above variant, and the optical characteristics and electrical properties of the semiconductor layer sequence are improved. In another embodiment of the optoelectronic semiconductor wafer, the first quantum well layer is used to emit electromagnetic radiation during operation, but the second quantum well layer is not used to emit electrical te transmission. The second quantum well layer is in the growth direction, e.g., before the first quantum well layer or after the first quantum well layer. By a second quantum well layer or a plurality of second quantum well layers having a layer thickness smaller than that of the first-10-200919883 quantum well layer and having more portions of the semiconductor material, or having a first quantum well The greater or the same layer thickness of the layer and the lesser number of components of the conductor material, the distribution in the first first quantum well layer of the semiconductor material can be particularly uniform. The number of first quantum well sags (e.g., gallium-vacancies) can be particularly small, such that the number of charge carrier pairs (P a 1 r) that are not emitted during recombination can be particularly small. In addition, in particular, the amount of dopant species diffused into the first quantum well layer is also particularly small. The conductor wafer has a particularly high lifetime. In one arrangement the optoelectronic semiconductor wafer has two first layers and at least one second quantum well layer. The second quantum well layer or multi-quantum well layer is disposed between the two first quantum well layers. For example, at least one second quantum well layer can increase the probability of charge carriers between the quantum well layers. Thus, a particularly uniform charge distribution can be achieved on the first quantum well layer that emits radiation. In another form of the above arrangement, the distance of the first quantum well layer located rearward of the at least one second quantum well layer direction is less than the distance to the first quantum well layer grown in front. For example, the distance from the first quantum well layer to the rear of the growth side is only one-half the distance to the first quantum well layer in the middle of the growth direction, for example, quarters - especially in semiconductor materials such as InAlGaN. , having a wurtzit structure, which produces a piezoelectric field that creates an energy barrier to the body and makes it difficult for the charge carrier to be injected into the first first radiation-deficient species having a half component or More, the second and second semi-quantum wells are used to divide the carrier into the growth direction and the front direction is below *. There is a charge in the quantum well -11- 200919883 layer. The second quantum well layer disposed closer to the rear first quantum well layer in the growth direction advantageously reduces the energy barrier of the charge carrier. In another arrangement, the optoelectronic semiconductor wafer has at least a first quantum well layer and two second quantum well layers, wherein at least one first quantum well layer is disposed between the two second quantum well layers. In another form, the at least one first quantum well layer is disposed between the first number - and the second number of second quantum well layers. In other words, a first number of second quantum well layers are located in front of the at least one first quantum well layer in the growth direction, and a second number of second quantum well layers are in the growth direction in the at least one first quantum well layer after that. Preferably, the first number of second quantum well layers and the second number of second quantum well layers comprise the same number of second quantum well layers. In other words, the number of second quantum well layers in the growth direction of the at least one first quantum well layer is preferably the same as the number of second quantum well layers in the growth direction of the at least one first quantum well layer. In the above arrangement, the electromagnetic radiation emitted by the at least one first quantum well layer can be introduced into the active region particularly well. For example, the refractive index of the active region can be increased by the second quantum well layer. The spatial overlap between the at least one first quantum well layer and the electromagnetic radiation emitted by the active region is particularly large' so that laser radiation can be emitted particularly efficiently during operation. The second quantum well layer can preferentially define a quantum well structure having an energy level that is different from the energy level of the quantum well structure defined by the at least one first quantum well layer. In this way, the risk of electromagnetic radiation emitted by the at least one first quantum well layer being absorbed in the region of the second quantum well layer can be lowered by -12-200919883 with a first number - And another form of the semiconductor wafer of a second number of second quantum well layers, the amount of the first component of the semiconductor material and/or the layer thickness of the second quantum well layer being away from the at least one first quantum well layer The direction is reduced layer by layer. In other words, in the two second quantum well layers, one of them is located before the at least one first quantum well layer, and the other is located after the at least one first quantum well layer, and the distance from the at least one first quantum well layer is The small second quantum well layer has a semiconductor component having a larger first component and/or a greater layer thickness. Therefore, it is advantageous to have a particularly good active region of the crystal structure. In one arrangement, the active zone has a plane of symmetry extending from the major extension of the active zone, i.e., extending perpendicular to the < In such an arrangement the active zone contains a plurality of first- and/or rabbit-like quantum well layers. The first quantum well layer and the second quantum well layer are arranged in mirror symmetry with respect to the 铋^% plane. Such a mirror-symmetric configuration, for example, introduces laser radiation into the active region of the laser diode wafer. The amount of the first component of the semiconductor material of the quantum well layer in another fabric f of the semiconductor wafer having a second quantum well layer is that the layer thickness of the quantum well layer is less than the layer of the first quantum well layer. The amount of the first component of the semiconductor material of the first zizi well layer is 1.2 to 2 times that of the 1J% layer of the first member. In another form, wherein the thickness of the second amount of layers is equal to or greater than the thickness of the layer of the first quantum well layer, the amount of the first component of the semiconductor material of the first layer is doubled to that of the second quantum well layer. A few % -13- 200919883 In another arrangement, the layers of the first- and second quantum well layers differ in thickness by a factor of two or more. For example, a layer thickness of a second quantum well layer is less than a layer thickness of the first quantum well layer, and a layer thickness of the second quantum well layer is at most one half of a layer thickness of the first quantum well layer, preferably a third. First, a particularly good time is a quarter. For example, the layer thickness of the first quantum well layer is between 2 and 10 nm, especially between 2 nm (inclusive) and 5 nm (inclusive). The layer thickness of the second quantum well layer is between 0.5 and 5 nm, preferably between 0.5 nm and 2 nm, for example, inm. In one arrangement, the semiconductor material of the 'first- and/or second quantum well layer contains at least two different elements of the same family (third group) in the periodic table, wherein the individual elements are included in the first of the semiconductor materials The other component of the component is contained in the second component of the semiconductor material. The amount of halogen contained in the first component of the family is between 0.5% and 50% of the element of the family of the semiconductor material. For example, the above-mentioned component is indium. The second component is, for example, GaN, A1N or AlGaN' which contains gallium and/or aluminum, and the two elements are like indium-like belonging to the third group of the periodic table. In another form, the amount of indium in the semiconductor material In"AlmGai_"_mN is 0.05S nS 0.5. In another form, a semiconductor wafer is used to emit a maximum intensity of electromagnetic radiation in the color spectrum, and the semiconductor material of the first quantum well layer has an indium composition of 0.15$η$〇.2. In another form, the semiconductor wafer is used to emit a maximum intensity of electromagnetic radiation in the ultraviolet spectral region and the semiconductor material of the dipole layer has an indium composition of 0.07 Sns 1.1 -14-200919883. The distance between the first- and second quantum well layers, the distance between the two first quantities, and/or the distance between the two second quantum well layers ΐlnm (inclusive) and 50 nm (inclusive) Good is in 3nm (inclusive) and 15 in between. In one arrangement, the amount of the first component of the material in the interior of the first- and/or second quantum well layer is not a fixed enthalpy. Conversely, the first f is a function of the layer thickness of the first- and/or second quantum well layers. The concentration of the first component may be continuously raised from the edge or toward the edge in the growth direction in the first or second portion of the region; In other words, the concentration profile (pr〇flle) of the first component has a slanted edge. The amount of the first component of the semiconductor material is referred to below as the maximum amount of the amount in the interior of the quantum well layer. In another arrangement, the optoelectronic semiconductor wafer is designed to radiate at a maximum intensity in the ultraviolet- and/or blue spectral region U. In another form, the intensity of the maximum chirp is located in the blue photoactive region containing two first quantum well layers for generating radiation. In the same form, the intensity is greatest in the ultraviolet spectral region and there are four first quantum well layers used to generate radiation. In another type, the semiconductor wafer is a laser diode wafer. Other advantages, advantages, and other forms of the optoelectronic semiconductor wafer of the present invention will be described in the following examples relating to Figures 1 through 11B. The sub-well layer is in the range of nm (inclusive) of the semiconductor component, for example, in the sub-well layer, or in the electromagnetic spectrum region in which the operation is performed in one or two other cases, and in another inactive region In the arrangement, the embodiment is exemplified by the example 200919883. [Embodiment] Each component in the drawings and the same embodiment or the same function is provided with the same component symbol. The components shown and the ratios between the components are not necessarily drawn to scale. Conversely, some of the details (e.g., layers) of the various figures have been shown enlarged or thickened for clarity and/or easier understanding. Table 1 shows a cross-section of the optoelectronic semiconductor wafer of the first embodiment of the present invention, which is currently a laser diode wafer. This semiconductor wafer has an epitaxial semiconductor layer sequence 1 on the growth substrate 2. The radiation-emitting epitaxial semiconductor layer sequence is, for example, a hexagonal compound semiconductor material, particularly a nitride-111 compound semiconductor material. The nitride-III-compound semiconductor material is preferably InAiGaN. The growth substrate 2 may suitably have a material suitable for growing the above-described nitride-III-compound semiconductor material. For example, the growth substrate 2 may contain or consist of at least one of GaN, SiC and/or gemstones. In the direction away from the substrate 2, the semiconductor layer sequence 1 first has a η-conducting layer or layer sequence 110, and then has an active region 1 2 0 and a Ρ-doped layer or layer sequence 1 after the active region 3 〇. For example, the η-conducting layer sequence 1 丨〇 has a (especially highly doped η_doped) η-contact layer 1 1 1, and the contact layer 1 丨丨 contains, for example, G aN , which is a kind of η − A dopant (eg, sand) is doped. Another η-conductive layer, for example, a GaN- or InGaN-layer 12 doped with an n-doped species (e.g., germanium) follows the n-contact layer 1 η. For example, the layer 1 1 2 τη current diffusion layer has high lateral conductivity. Further, the 'semiconductor layer sequence 1 preferably has a charge carrier confinement layer. In the case of a laser diode chip, the confinement layer is a cl additive layer 113. The outer cover layer 113 follows the n-contact layer 1 1 1 and the n-conductive layer 1 1 2 in the growth direction (gp, particularly the direction away from the growth substrate 2). The η-cover layer 113 contains a super-lattice formed by an alternating pair. For example, it is a superlattice formed by a pair of AlGaN-layers and a GaN-r layer or a superlattice formed by two A1GaN-layers having different aluminum contents. At least one of each pair of layers is preferably doped with an n-doped species (e.g., ruthenium). An n-conductive waveguide layer 14 (eg, an undoped A1GaN_layer) follows the outer cover layer. A P-conductive layer 1 3 1 ', for example, an AlGaN-layer doped with a p-doped species (e.g., magnesium) follows the active region 120 in a direction away from the growth substrate. This p-conductive layer 131 may also be omitted to reduce the risk of diffusion of the dopant dopant ί into the active region 120. Furthermore, the germanium-conducting layer sequence 130 contains a p-waveguide layer η2 and a germanium-charge carrier confinement layer (currently a p-overcoat layer 丨33) which are superposed in the growth direction. The Ρ-waveguide layer 1 32 has, for example, undoped AlGaN'. The ρ-overcoat layer has a superlattice structure composed of a pair of layers similar to the η-overcoat layer 113, wherein each pair of layers is, for example, There is an AlGaN-layer doped with a ytterbium-doped material such as 'magnesium, and one undoped AlGaN-layer. The p-overlayer 133 follows a p-contact layer 134, -17-200919883. This P-contact layer 134 is, for example, a highly doped p-doped G a N -layer. The active region 120 contains a first quantum well layer 3 and a second quantum well layer 4 that follows the first quantum well layer 3 in the growth direction. One terminal-level barrier layer 51 is located before the first quantum well layer 3, and the other terminal-level barrier layer 51 is after the second quantum well layer 4. The barrier layer 52 is disposed between the first quantum well layer 3 and the second quantum well layer 4 and separates the two quantum well layers. The layer thickness of this barrier layer 52 is approximately 5 nm. The terminal-level barrier layer 5 1 , the barrier layer 5 2 and the first and second quantum well layers 3, 4 are preferably undoped. At least one of the terminal-level barrier layer 5 1 and/or the barrier layer 52 and/or at least one of the first and second quantum well layers 3, 4 may alternatively or alternately in this embodiment or in another arrangement Doped with n _ or p _ dopant. The first and second quantum well layers 3' 4 are different from the barrier layers 51, 52, in particular the composition of the semiconductor material. For example, the semiconductor material is I η η A1 m G a m N. The first component (currently a marriage) of the abundance conductor material has a quantity c (a concentration) in the first and second quantum well layers 3, 4 that is greater than that in the barrier layer 5 1 ' 5 2 . For example, the indium concentration (gp, the component n in the composition InnAUGamN) in the quantum well layer 3 '4 is high. Fig. 2 is a view showing the concentration profile of the first component of the semiconductor material in the active region of the semiconductor layer sequence of the first embodiment of the present invention. This concentration c (currently indium concentration) is plotted against the relative position X in units of n m . This growth direction extends from left to right in Fig. 2A. The concentration c becomes larger from the top to the bottom, and thus it is expressed in arbitrary units. For the sake of clarity, the concentration difference 値 has been shown excessively. -18- 200919883 Therefore, the indium concentration c is small in the terminal-position barrier layer 5 1 and the barrier layer 5 2 , for example, 'in these layers, no indium or virtually indium is absent. The first quantum well layer 3 has a maximum indium concentration c. The indium concentration c of the second quantum well layer 4 is greater than the indium concentration of the barrier layer 51, 52 and less than the indium concentration C 0 of the first quantum well layer 3, and the amount C of the first component of the semiconductor material, which is currently the indium concentration C, Will affect the energy gap of the semiconductor material. This band gap is therefore set by the energy distance between the low energy edge of the conductive strip and the high energy edge of the valence band. The low energy edge outer shape of the conductive strip substantially corresponds to the concentration profile of the first component of the semiconductor material 'where the energy axis E is shown in the opposite direction to the concentration axis c. In Figure 2A, this energy E increases from bottom to top. The outer edge of the energy edge of the conductive strip "substantially" corresponds to the concentration profile, which indicates that various disturbances such as the effect of the piezoelectric field in the semiconductor material are not considered in the drawings. Due to the piezoelectric field, the concentration profile may be poor, etc., for example, in the junction region between one of the barrier layers 5 1, 5 2 and the adjacent first - or second quantum germanium layers 3, 4. Energy barrier. For the quantum well layer 3, such differences are indicated by dashed lines in Figure 2A. In the first embodiment, the 'indium content c is equal to the component η of the component IniiAlmGai.n mN, and the indium content c is 1.2 times (inclusive) to 2 in the first quantum well layer 3, for example, the second quantum well layer 4. Double (inclusive). It is currently about 2 times. The layer thickness of the first quantum well layer 3 is at most equal to, for example, half the layer thickness of the second quantum well layer 4. At present, the layer thickness of the second quantum well layer 4 is about 2.5 times the layer thickness of the first quantum well layer 3. The first layer of quantum 幷餍 -19- 200919883 3 is about 2 nm thick. The energy level of the quantum well structure is defined by the first and second quantum well layers 3'4, which is related to the concentration c of the first component and the layer thickness of the quantum well layer 3'4. The quantum wells defined by the first and second quantum well layers 3, 4 have substantially the same energy level. The first quantum well layer 3 and the second quantum well layer 4 in this embodiment are both quantum well layers that emit radiation in this manner. In the first embodiment of Figure 2A, the concentration profile of the first component of the semiconductor material is substantially rectangular. The actual concentration profile will differ from the shape of the figure due to the diffusion and/or deposition of the first component. In the variant shown in Fig. 2B of the first embodiment, no rectangular shape of the indium concentration c is attempted. Conversely, the concentration of the first quantum well layer 3 is V-shaped and the trapezoid is formed outside the concentration of the second quantum well layer 4. In the two quantum well layers 3, 4, the concentration c of the first component of the semiconductor material continuously rises in the range of about 0.5 nm to 1 nm wide of the layer thickness. L In the first quantum well layer 3, the rise lasts approximately to the center of the layer, from which the concentration c begins to decrease continuously and is approximately symmetric to the rise. In the second quantum well layer 4, the concentration c of the first component is substantially germanium in the central region of the second quantum well layer and is steep (actually vertical) on the side remote from the first quantum well layer Ground). The inventors have determined the fact that 'by the above-mentioned V-shaped-and/or trapezoidal shape' is due to the energy barrier caused by the piezoelectric field in the hexagonal semiconductor material to the charge in the quantum well layer 3'4 The most unfavorable effect of the injection of the carrier -20- 200919883 can be reduced. The second embodiment shown in Fig. 3A differs from the first embodiment in that the 'active region 120 has two first quantum well layers 3 which are overlapped in the growth direction and are respectively supported by a barrier layer 5 2 and separated from each other. The three first quantum well layers 3 are used to generate radiation. The first quantum well layer 3 has, for example, a layer thickness of about 4 n m. The barrier layer 5 2 is, for example, approximately 8 n thick. A plurality of (currently two) second quantum well layers 4 follow the three first quantum well layers 3 in the growth direction 'ie' the second quantum well layer 4 is disposed on the first quantum well layer on the p_ side After 3. The second quantum well layer 4 has a layer thickness that is less than the layer thickness (about inm) of the first quantum well layer 3. The layer thickness of the second quantum well layer 4 is, for example, at most one half of the layer thickness of the first quantum well layer 3, preferably one quarter. The indium concentration c of the second quantum well layer 4 is between 1.2 times (inclusive) and 2 times (inclusive) of the indium concentration c of the first quantum well layer 3, and the two second quantum well layers 4 are separated by bits. The barrier layers are separated from each other, and the layer thickness of the barrier layer is about 3 nm. Another barrier layer 52 is disposed between the first and second quantum well layers 3, 4, and the thickness of the barrier layer 52 is approximately 18 nm. The second quantum well layer 4 can advantageously reduce the risk of diffusion of a p-doped species (e.g., magnesium) into the quantum well layer 3 used to generate radiation. In this embodiment, the second quantum well layer 4 is not used to generate radiation. Since the indium concentration c and the smaller layer thickness are compared with the first quantum well layer 3, the electromagnetic radiation is emitted at the energy level of the quantum well defined by the first quantum well layer 3 The energy level of the second quantum well layer 4 is only -2 1- 200919883 has a small probability to emit electromagnetic radiation. When a p-doped substance is diffused into the second quantum well layer 4, it does not affect the efficiency of the semiconductor wafer or has only a slight influence, so that the life of the semiconductor wafer is particularly high. Each of the two first quantum well layers 3 following each other has a distance d1, and each of the two second quantum well layers following each other has a distance d2. The distance d 1 is in particular equal to the layer thickness of the barrier layer 52, which separates the two first quantum well layers 3 from each other. The distance d2 is in particular equal to the layer thickness of the barrier layer 52, which separates the two second quantum well layers 4 from each other. The distances d 1 and d2 do not have to be equal. For example, the distance d 1 between the two first quantum well layers 3 is at least twice the distance d 2 between the two second dice well layers 4. In the variant of the second embodiment shown in Fig. 3B, the two second quantum well layers 4 have a layer thickness greater than the layer thickness of the first quantum well layer 3 (which is about 6 nm). The distance from the second quantum well layer 4 to the first quantum well layer 3 is about 4 nm smaller than the embodiment shown in Fig. 3A. Each of the second quantum well layers 4 is separated by a barrier layer 52, and the layer thickness d2 of the barrier layer 52 is also 4 nm. The layer thickness of the barrier layer 52 disposed between the two first quantum well layers 3 is thus twice the layer thickness of the barrier layer 52 disposed between the two second quantum well layers 4. The amount c of the first component of the semiconductor material is less than that of the first quantum well layer 4 in the second quantum layer 4. For example, the concentration c of the first component of the semiconductor material in the first quantum well layer 3 is 1.2 times (inclusive) to 2 times (inclusive) in the second quantum well layer 4 of -22-200919883. As shown in the second embodiment, each of the second quantum well layers 4 is not used to emit electromagnetic radiation in the variant of the first embodiment of the first Qing Dynasty. In the second embodiment and its variants, the amount of the first component of the semiconductor material in the active region is higher than the amount in the active region when the second quantum well layer 4 is not present. In this manner, the active region has a higher refractive index than when a layer of the semiconductor layer sequence is provided before and/or after the active region. The active region 120 is therefore particularly suitable for use as a waveguide for electromagnetic radiation generated in the activity of claim 20. In another form, the semiconductor layer sequence 1 is not provided with an η-waveguide layer 114 and/or a p-waveguide layer 132, and each waveguide layer is shown in Fig. 1.
第4A圖中顯示第三實施例之半導體晶片之活性區1 2〇之 銦含量之濃度外形。層厚度及第一成份之濃度c等於第二實 施例之變異形中的層厚度及濃度（第3B圖）。然而，在第三 實施例中第二量子井層4在生長方向中位於第一量子井層3 之前。 第4 B圖顯示第三實施例之變異形之銦濃度之外形。第三 實施例之變異形之活性區1 20例如與第4A圖之第三實施例 之活性區不同之處在於，多個第二量子井層4(用來取代二 個平坦且寬廣之第二量子井層4)在生長方向中位於第一量 子井層3之中。相較於第一量子井層3而言，該多個第二量 子井層4具有較小的層厚度以及具有半導體材料之第—$ 份之更多的濃度c。此處顯示有七個第二量子井層4位於第 -23- 200919883 一量子井層3之前，其間距離大約是15n m。 在第4 B圖所示之第三實施例之變異形中，位於每二個相 鄰之第二量子井層4之間的位障層5 2具有一種大約2 n m之 層厚度d2，各個第二量子井層4分別具有lnm之厚度。 藉由第二量子井層4(其在第三實施例及其變異形中不是 用來產生輻射且位於發出輻射用之第一量子井層3之前）， 則可使活性區1 20達成一種特別高的晶體品質。特別是第一 量子井層3之區域中該活性區之晶體品質特別高，使用來 產生輻射之第一量子井層3之區域中電荷載體發生重組而 未發出輻射之危險性下降。由如第4B圖之第三實施例所示 之第二量子井層4所構成的超晶格結構特別適合於此處。 在第5圖所示之第四實施例中，多個第二量子井層41， 42，43在生長方向中位於二個第一量子井層3之前。 然而，相對於先前的實施例而言，不是全部的第二量子 井層都具有相同的層厚度。反之，在離開第一量子井層3 而延伸之外形中各層之層厚度逐漸下降。換言之，直接與 第一量子井層3相鄰的第二量子井層41具有最大的層厚 度’離開第一量子井層3最遠的第二量子井層43具有最小 的層厚度’且配置在此二個第二量子井層41，43之間的第 二量子井層42所具有的層厚度介於該二個第二量子井層 4 1，4 3之層厚度之間。 於此’該二個面向第一量子井層3之第二量子井層41， 42具有一種層厚度，其大於或等於第一量子井層3之層厚 -24- 200919883 度且所具有之該活性區之半導體材料之第一成份之量是 C’其小於第一量子井層3之第一成份之量。離開第一量子 井層3最遠之第二量子井層43在本實施例中一方面具有小 於第一量子井層3之層厚度，且另一方面該半導體材料之 第一成份之量（例如，銦濃度）c亦小於第一量子井層3之第 一成份之量。 例如，在本實施例或先前的實施例中，全部之第二量子 井層4, 41’ 42’ 43都含有相同濃度c之半導體材料之第— 成份。 弟6 A圖所不的桌五貫施例除了二個位於第一量子井層3 之前的第二量子井層41，42，43之外另具有其它三個第二 量子井層41’ 42’ 43’其在生長方向中位於第一量子井層3 之後。 第五實施例之活性區1 2 0因此具有一種對稱平面6。活性 區120之第一量子井層3和第二量子井層41，42，43分別 對該對稱平面6成鏡面對稱而配置著。 第6B圖所示的第五實施例之變異形不同於第五實施例之 處在於，第二量子井層中所含有的銦濃度c會改變，但第：：： 量子井層41，42，43之層厚度未改變。第6B圖所示的第二 量子井層41，42，43都具有相同的層厚度，其在此一變異 形中亦與第一量子井層3之層厚度相同。上述半導體材料 之第一成份之濃度c在離開第一量子井層3而延伸之外形中 逐層地下降。 -25- 200919883 第6C圖中顯示第五實施例之另—種變異形。在此種第二 變異形中，在生長方向中位於第一量子井層3之後的第二 量子井層41’ ，42’ ，43’之銦濃度外形基本上不是矩形而 是一種梯形的外形，這與第6 B圖所示的第五實施例之變異 形不同’但與第一實施例之第2 B圖所示的變異形之第二量 子井層4相似。 以上述方式，則電洞由半導體晶片之p _側經由生長方向 中位於第一量子井層3之後的第二量子井層41’ ，42’ ， 43’而注入至用來發出輻射的第一量子井層3中時特別有 效。 在第7圖所示的第六實施例中，如第五實施例所示，該 活性區1 2 0同樣對稱於對稱平面6。此對稱平面6目前是經 由第一量子井層3而延伸。活性區1 2 0特別是具有奇數個活 性（即’用來產生輻射）之第一量子井層3。活性區1 2 0目前 恰巧具有一個第一量子井層3，其用來產生輻射。 第一量子井層3之半導體材料包含該活性區120之半導體 材料之第一成份（目前是銦）之量是c，其大約是第二量子井 層4之半導體材料者之二倍。 此處須指出，與第2A圖至第11B圖之濃度外形不同之處 在於’第7圖之濃度外形中，半導體材料之第一成份之濃 度c是由下向上增加。 分別有二個第二量子井層4在生長方向中位於第一量子 井層3之前及之後。個別的二個相鄰的量子井層3，4之間 -26- 200919883 的距離目前都是同樣大。 第7圖中顯示該活性區120中由第一量子井層3所發出之 輻射之場強度7之大小A。。藉由對稱於該對稱平面6而配 置的桌一 Η子井層4，則可在第一量子井層3和該活性區1 2 0 中傳送的電磁輻射之場強度7之間達成一特別高的重疊， 這樣可藉由該半導體晶片而特別有效地產生雷射輻射。 第8Α圖顯示第七實施例之半導體晶片之銦濃度的外形。 與先前的實施例不同之處在於，第七實施例中一第二量子 井層4配置在二個第一量子井層3之間。 目前的第二量子井層所具有的層厚度是與該二個第一量 子井層3的層厚度相同，但銦濃度c小於該二個第一量子井 層3中者。另一方式是，第二量子井層4之層厚度小於第一 量子井層3之層厚度，但銦濃度c大於該二個第一量子井層 3中者。 在第七實施例中，第二量子井層4配置在二個第一量子 井層3之中央，使該活性區1 2 0對該對稱平面6成鏡面對稱。 在第8 Β圖所示之第七實施例之一種變異形中，多個（目前 是四個）第二量子井層4配置在二個第一量子井層3之中央 且與該鏡面6成對稱而配置著。此處特別是涉及一種層厚 度較小的第二量子井層4之超晶格，其活性區之半導體材 料之第一成份之濃度c較高。 配置在該二個第一量子井層3之間的至少一第二量子井 層4例如是作爲至少一用來產生輻射之第一量子井層3用之 -27- 200919883 電荷儲存區。因此，可在個別的第一量子井層3上達成特 別均句的電荷分佈。另一方式是，配置在二個第一量子井 層3之間的至少一第二量子井層4特別是有利地耦合著二個 第一量子井層3。例如，該至少一第二量子井層4可支配一 種微帶（mini-band)以使電荷載體在二個第一量子井層3之 間穿隧。以此種方式，則該二個第一量子井層3可特別均 句地受到電性栗送（electrically pumping)。 第9圖顯示第八實施例之活性區1 20之半導體材料之第一 成份的濃度外形。就像第七實施例一樣，第二量子井層4 配置在二個第一量子井層3之間。 目前的第二量子井層4具有一種例如2nm以下之層厚 度’層厚度較佳是lnm以下。第二量子井層4之層厚度目 前是小於第一量子井層3之層厚度之五分之一。第二量子 井層4之半導體材料中第一成份之量c例如是第一量子井層 3之半導體材料之第一成份之量c之1 .2倍至2倍。 相較於第七實施例而言，第二量子井層4目前不是配置 在二個第一量子井層3之中央。反之，第二量子井層4距離 該生長方向中配置在後的第一量子井層3較近，距離該生 長方向中配置在前之第一·量子井層3較遠。 第八實施例中，二個第一量子井層3之間的距離d,例如 至少是配置在該二個第一量子井層3之間的第二量子井層4 之層厚度之至少二倍，較佳是至少四倍，特別佳時是至少 五倍’及/或此距離dl等於第二量子井層4至該生長方向中 -28- 200919883 配置在後的第一量子井層3之距離。第二量子井層4至配置 在前的第一量子井層3之距離目前大約是至配置在後之第 一量子井層3之距離的大約四倍至五倍。例如，後者之値 大約介於lnm至2nm之間，且第二量子并層4至該生長方 向中配置在前之第一量子井層之距離介於4nm(含）和 6 n m (含）之間。 藉由第二量子井層4，則用來產生輻射之第一量子井層3 之能量位障可有利地下降，如第2A圖中以虛線所示的第一 量子井層3所不者。 在第10圖所示的第九實施例中，第二量子井層4配置在 第一量子井層3內部中。換言之，第二量子井層4鄰接於該 在活性區1 2 0之生長方向中配置於其前的第一量子井層3 之第一子區（partial are a)31。此外，第二量子井層4鄰接於 該在活性區1 2 0之生長方向中配置於其後的第一量子井層3 之第二子區32。第一-和第二量子井層3，4特別是未由一 種位障層5 2所隔開。 本實施例中，上述半導體材料之第一成份之量c在第一量 子井層3之第一-和第二子區31，32中較第二量子井層4中 的半導體材料之第一成份之量c大1.2倍至2倍。較其它具 有第二量子井層4(其所含有的第一成份之量c較高）之實施 例而言，本實施例中第二量子井層4之層厚度不大於或等 於第一量子井層之層厚度。反之，第二量子井層4之層厚 度目前是小於第一量子井層3之層厚度。例如，第二量子 -29- 200919883 井層4之層厚度最多是第一量子井層3之層厚度之三分之 一，較佳是五分之一。 藉由第一量子井層3內部中所配置的第二量子井層4,則 可達成一特別高的晶體品質，且因此可使第一量子井層3 中之輪射產生的效率特別闻。第一量子井層3之第一子區 31和第二子區32可有利地藉由第二量子井層4而相稱合。 本實施例中可有利地獲得一第一量子井層3，其具有特別大 的層厚度且能以此種方式發出輻射流較大的電磁輻射。 / & 第1 1 A圖中顯示第十實施例之活性區1 20之半導體材料 之第一成份之濃度外形。第十實施例中，就像第九實施例 一樣，一第二量子井層4個別地配置在一第一量子井層3 之內部中。 然而，相較於第九實施例而言，第十實施例中設有產生 輻射用的第二量子井層4,第一量子井層3不是用來產生輻 射而是可有利地用來將第二量子井層4之電荷載體予以聚 G 集。因此，特別是可製成一種以InAlGaN爲主的半導體雷 射晶片。其可發出波長特別短的雷射束。例如，該半導體 雷射晶片可在波長大於或等於470nm的範圍中具有一種發 射最大値，此發射最大値特別是可在長波長的藍色光譜區 或綠色光譜區中。 本實施例或先前的第九實施例中，活性區1 2 0之第一和第 二量子井層3，4以對該對稱平面6成鏡面對稱的方式而配 置著。 -30- 200919883 第11B圖中顯示第十實施例之另一形式。此另一形式中， 第一量子井層3之橫切面具有半導體材料之第一成份之v_ 形的濃度外形。以此方式’可達成一種特別良好的電荷載 體捕捉作用。 本發明當然不限於依據各實施例中所作的描述。反之， 本發明包含每一新的特徵和各特徵的每一種組合，特別是 包含各申請專利範圍-或不同實施例之個別特徵之每一種組 合’當相關的特徵或相關的組合本身未明顯地顯示在各申 請專利範圍中或各實施例中時亦屬本發明。 【圖式簡單說明】 第1圖本發明第一實施例之光電半導體晶片之發出輻射 的半導體層序列的橫切面。 第2A，2B圖本發明第—實施例及其變異形之半導體層 序列之活性區之半導體材料之第一成份之濃度外形。 第3A’ 3B圖本發明第二實施例及其變異形之活性區之 半導體材料之第一成份之濃度外形。 第4A，4B圖本發明第三實施例及其變異形之活性區之 半導體材料之第一成份之濃度外形。 第5圖本發明第四實施例之活性區之半導體材料之第一 成份之濃度外形。 第6A’ 6B和6C圖本發明第五實施例及其第一、第二變 異形之活性區之半導體材料之第一成份之濃度外形。 第7圖本發明第六實施例之活性區之半導體材料之第一 -31- 200919883 成份之濃度外形。 第8 A，8 B圖本發明第七實施例及其變異形之活性區之 半導體材料之第一成份之濃度外形。 第9圖本發明第八實施例之活性區之半導體材料之第一 成份之濃度外形。 第1 0圖本發明第九實施例之活性區之半導體材料之第 一成份之濃度外形。 第1 1 A，Π B圖本發明第十實施例及其變異形之活性區 之半導體材料之第一成份之濃度外形。 【主要元件符號說明】 1 半導體層序列^ 2 生長基板 3 第一量子井層 4 第二量子井層 6 對稱平面 7 場強度之値 3 1 第一子區 32 第二子區 41,42,43 第二量子井層 5 1 終端-位障層 52 位障層 1 10 η -摻雜層或層序列 111 η -接觸層 -32- n-導電層 n-電荷載體局限層 η -波導層 活性區 Ρ-導電層或層序列 Ρ-摻雜層 Ρ -波導層 Ρ-電荷載體局限層 Ρ -接觸層 場強度之値 濃度 第一距離 第二距離 能量 相對位置 -33-Fig. 4A shows the concentration profile of the indium content of the active region of the semiconductor wafer of the third embodiment. The layer thickness and the concentration c of the first component are equal to the layer thickness and concentration in the variant of the second embodiment (Fig. 3B). However, in the third embodiment, the second quantum well layer 4 is located before the first quantum well layer 3 in the growth direction. Fig. 4B shows the shape of the indium concentration of the variant of the third embodiment. The variant active region 1 20 of the third embodiment differs, for example, from the active region of the third embodiment of FIG. 4A in that a plurality of second quantum well layers 4 (used to replace two flat and broad second The quantum well layer 4) is located in the first quantum well layer 3 in the growth direction. The plurality of second quantum well layers 4 have a smaller layer thickness and a greater concentration c of the first portion of the semiconductor material compared to the first quantum well layer 3. Here, seven second quantum well layers 4 are shown before the quantum well layer 3 of -23-200919883 with a distance of approximately 15 nm. In the variant of the third embodiment shown in FIG. 4B, the barrier layer 52 between each two adjacent second quantum well layers 4 has a layer thickness d2 of about 2 nm, each of which The two quantum well layers 4 each have a thickness of 1 nm. By means of the second quantum well layer 4, which is not used to generate radiation and is located before the first quantum well layer 3 for emitting radiation in the third embodiment and its variants, the active region 1 20 can be made to have a special High crystal quality. In particular, the crystal quality of the active region in the region of the first quantum well layer 3 is particularly high, and the charge carrier in the region of the first quantum well layer 3 used to generate radiation is recombined without a risk of radiation emission. The superlattice structure composed of the second quantum well layer 4 as shown in the third embodiment of Fig. 4B is particularly suitable here. In the fourth embodiment shown in FIG. 5, a plurality of second quantum well layers 41, 42, 43 are located in front of the two first quantum well layers 3 in the growth direction. However, not all of the second quantum well layers have the same layer thickness relative to the previous embodiments. On the contrary, the thickness of each layer in the form of the outer layer extending away from the first quantum well layer 3 gradually decreases. In other words, the second quantum well layer 41 directly adjacent to the first quantum well layer 3 has the largest layer thickness 'the second quantum well layer 43 farthest from the first quantum well layer 3 has the smallest layer thickness' and is disposed in The second quantum well layer 42 between the two second quantum well layers 41, 43 has a layer thickness between the thicknesses of the two second quantum well layers 4, 4 3 . The second quantum well layers 41, 42 facing the first quantum well layer 3 have a layer thickness greater than or equal to the layer thickness of the first quantum well layer 3 -24 to 200919883 degrees and have The amount of the first component of the semiconductor material of the active region is C' which is less than the amount of the first component of the first quantum well layer 3. The second quantum well layer 43 furthest away from the first quantum well layer 3 in this embodiment has on the one hand a layer thickness smaller than the first quantum well layer 3 and on the other hand the first component of the semiconductor material (for example The indium concentration)c is also less than the amount of the first component of the first quantum well layer 3. For example, in this or previous embodiments, all of the second quantum well layers 4, 41' 42' 43 contain the first component of the semiconductor material of the same concentration c. The fifth embodiment of the table 6 A has three other second quantum well layers 41' 42' in addition to the second quantum well layers 41, 42, 43 located before the first quantum well layer 3. 43' is located behind the first quantum well layer 3 in the growth direction. The active region 120 of the fifth embodiment thus has a plane of symmetry 6. The first quantum well layer 3 and the second quantum well layers 41, 42, 43 of the active region 120 are respectively arranged in mirror symmetry with respect to the plane of symmetry 6. The variant of the fifth embodiment shown in Fig. 6B differs from the fifth embodiment in that the indium concentration c contained in the second quantum well layer changes, but the::: quantum well layer 41, 42, The thickness of layer 43 did not change. The second quantum well layers 41, 42, 43 shown in Fig. 6B all have the same layer thickness, which is also the same as the layer thickness of the first quantum well layer 3 in this variant. The concentration c of the first component of the above semiconductor material decreases layer by layer in a shape extending away from the first quantum well layer 3. -25- 200919883 Another variant of the fifth embodiment is shown in Fig. 6C. In this second variant, the indium concentration profile of the second quantum well layers 41', 42', 43' located behind the first quantum well layer 3 in the growth direction is substantially not rectangular but a trapezoidal shape. This is different from the variant of the fifth embodiment shown in Fig. 6B', but similar to the variant second quantum well layer 4 shown in Fig. 2B of the first embodiment. In the above manner, the hole is injected from the p_ side of the semiconductor wafer to the second quantum well layer 41', 42', 43' located after the first quantum well layer 3 in the growth direction to the first to emit radiation. It is particularly effective in the quantum well layer 3. In the sixth embodiment shown in Fig. 7, as shown in the fifth embodiment, the active region 120 is also symmetric with respect to the plane of symmetry 6. This plane of symmetry 6 is currently extended by the first quantum well layer 3. The active region 120 is in particular a first quantum well layer 3 having an odd number of activities (i.e., used to generate radiation). The active zone 1 2 0 currently happens to have a first quantum well layer 3 which is used to generate radiation. The semiconductor material of the first quantum well layer 3 comprises the first component of the semiconductor material of the active region 120 (currently indium) in an amount c which is about twice that of the semiconductor material of the second quantum well layer 4. It should be noted here that the difference in density profile from Figs. 2A to 11B is that in the concentration profile of Fig. 7, the concentration c of the first component of the semiconductor material is increased from the bottom to the top. There are two second quantum well layers 4, respectively, before and after the first quantum well layer 3 in the growth direction. The distance between two adjacent quantum well layers 3, 4 and -26-200919883 is currently the same. The magnitude A of the field strength 7 of the radiation emitted by the first quantum well layer 3 in the active region 120 is shown in FIG. . By means of a table-by-layer well layer 4 arranged symmetrically to the plane of symmetry 6, a particularly high level of field strength 7 of electromagnetic radiation transmitted between the first quantum well layer 3 and the active region 1 2 0 can be achieved. The overlap allows for the particularly efficient generation of laser radiation by the semiconductor wafer. Fig. 8 is a view showing the outer shape of the indium concentration of the semiconductor wafer of the seventh embodiment. The difference from the previous embodiment is that a second quantum well layer 4 in the seventh embodiment is disposed between the two first quantum well layers 3. The current second quantum well layer has a layer thickness that is the same as the layer thickness of the two first quantum well layers 3, but the indium concentration c is smaller than the two first quantum well layers 3. Alternatively, the layer thickness of the second quantum well layer 4 is less than the layer thickness of the first quantum well layer 3, but the indium concentration c is greater than that of the two first quantum well layers 3. In the seventh embodiment, the second quantum well layer 4 is disposed in the center of the two first quantum well layers 3 such that the active region 120 is mirror-symmetrical to the plane of symmetry 6. In a variation of the seventh embodiment shown in FIG. 8 , a plurality of (currently four) second quantum well layers 4 are disposed in the center of the two first quantum well layers 3 and are formed in the mirror surface 6 Symmetrically configured. In particular, it relates to a superlattice of a second quantum well layer 4 having a relatively small layer thickness, wherein the concentration c of the first component of the semiconductor material in the active region is relatively high. The at least one second quantum well layer 4 disposed between the two first quantum well layers 3 is, for example, a charge storage region for the first quantum well layer 3 for generating radiation, -27-200919883. Therefore, a charge distribution of a particular mean sentence can be achieved on the individual first quantum well layer 3. Alternatively, at least one second quantum well layer 4 disposed between the two first quantum well layers 3 is particularly advantageously coupled to the two first quantum well layers 3. For example, the at least one second quantum well layer 4 can dictate a mini-band to tunnel the charge carriers between the two first quantum well layers 3. In this way, the two first quantum well layers 3 can be electrically pumped in a particularly uniform manner. Fig. 9 is a view showing the concentration profile of the first component of the semiconductor material of the active region 120 of the eighth embodiment. As in the seventh embodiment, the second quantum well layer 4 is disposed between the two first quantum well layers 3. The current second quantum well layer 4 has a layer thickness of, for example, 2 nm or less. The layer thickness is preferably 1 nm or less. The layer thickness of the second quantum well layer 4 is currently less than one fifth of the layer thickness of the first quantum well layer 3. The amount c of the first component of the semiconductor material of the second quantum well layer 4 is, for example, 1.2 to 2 times the amount c of the first component of the semiconductor material of the first quantum well layer 3. The second quantum well layer 4 is not currently disposed in the center of the two first quantum well layers 3 as compared to the seventh embodiment. On the other hand, the second quantum well layer 4 is closer to the first quantum well layer 3 disposed in the growth direction, and is farther from the first quantum well layer 3 disposed in the growth direction. In the eighth embodiment, the distance d between the two first quantum well layers 3 is, for example, at least twice the layer thickness of the second quantum well layer 4 disposed between the two first quantum well layers 3. Preferably, it is at least four times, particularly preferably at least five times 'and/or the distance dl is equal to the distance from the second quantum well layer 4 to the growth direction -28-200919883 disposed first quantum well layer 3 . The distance from the second quantum well layer 4 to the first quantum well layer 3 disposed is currently about four to five times the distance from the first quantum well layer 3 disposed thereafter. For example, the latter is between about 1 nm and 2 nm, and the distance between the second quantum parallel layer 4 and the first quantum well layer disposed in the growth direction is between 4 nm and 6 nm. between. With the second quantum well layer 4, the energy barrier of the first quantum well layer 3 used to generate radiation can advantageously be reduced, as in the first quantum well layer 3 shown in phantom in Figure 2A. In the ninth embodiment shown in Fig. 10, the second quantum well layer 4 is disposed inside the first quantum well layer 3. In other words, the second quantum well layer 4 is adjacent to the first partial region 31 of the first quantum well layer 3 disposed in front of the growth direction of the active region 120. Further, the second quantum well layer 4 is adjacent to the second sub-region 32 of the first quantum well layer 3 disposed in the growth direction of the active region 120. The first and second quantum well layers 3, 4 are not particularly separated by a barrier layer 52. In this embodiment, the amount c of the first component of the semiconductor material is higher in the first and second sub-regions 31, 32 of the first quantum well layer 3 than the first component of the semiconductor material in the second quantum well layer 4. The amount c is 1.2 times to 2 times larger. Compared with other embodiments having the second quantum well layer 4, which has a higher amount c of the first component, the layer thickness of the second quantum well layer 4 in this embodiment is not greater than or equal to the first quantum well. The layer thickness of the layer. Conversely, the layer thickness of the second quantum well layer 4 is currently less than the layer thickness of the first quantum well layer 3. For example, the thickness of the second layer of the second quantum -29-200919883 well layer is at most one third, preferably one fifth, of the layer thickness of the first quantum well layer 3. By virtue of the second quantum well layer 4 disposed in the interior of the first quantum well layer 3, a particularly high crystal quality can be achieved, and thus the efficiency of the firing in the first quantum well layer 3 can be particularly pronounced. The first sub-region 31 and the second sub-region 32 of the first quantum well layer 3 may advantageously be commensurate by the second quantum well layer 4. In the present embodiment, a first quantum well layer 3 can be advantageously obtained which has a particularly large layer thickness and which emits electromagnetic radiation with a large radiation flow in this way. / & Figure 1 1 A shows the concentration profile of the first component of the semiconductor material of the active region 120 of the tenth embodiment. In the tenth embodiment, as in the ninth embodiment, a second quantum well layer 4 is individually disposed in the interior of a first quantum well layer 3. However, compared to the ninth embodiment, the tenth embodiment is provided with a second quantum well layer 4 for generating radiation, which is not used to generate radiation but can be advantageously used to The charge carriers of the two quantum well layers 4 are aggregated. Therefore, in particular, a semiconductor laser wafer mainly composed of InAlGaN can be fabricated. It emits a laser beam with a particularly short wavelength. For example, the semiconductor laser wafer may have a maximum emission 在 in the range of wavelengths greater than or equal to 470 nm, which may be in the blue spectral region or the green spectral region of the long wavelength. In the present embodiment or the previous ninth embodiment, the first and second quantum well layers 3, 4 of the active region 120 are arranged in such a manner as to be mirror-symmetrical to the plane of symmetry 6. -30- 200919883 Another form of the tenth embodiment is shown in Fig. 11B. In this other form, the cross-section of the first quantum well layer 3 has a concentration profile of the v-shape of the first component of the semiconductor material. In this way, a particularly good charge trapping effect can be achieved. The invention is of course not limited to the description made in accordance with the various embodiments. In contrast, the present invention encompasses each novel feature and each combination of features, and in particular, each of the claims and/or combinations of individual features of the various embodiments. The invention is also shown in the scope of each patent application or in the various embodiments. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a sequence of a radiation-emitting semiconductor layer of an optoelectronic semiconductor wafer according to a first embodiment of the present invention. 2A, 2B are graphs showing the concentration profile of the first component of the semiconductor material in the active region of the semiconductor layer sequence of the first embodiment of the present invention. 3A' 3B is a view showing the concentration profile of the first component of the semiconductor material of the second embodiment of the present invention and its variant active region. 4A, 4B are graphs showing the concentration profile of the first component of the semiconductor material of the third embodiment of the present invention and its variant active regions. Fig. 5 is a view showing the concentration profile of the first component of the semiconductor material of the active region of the fourth embodiment of the present invention. 6A' 6B and 6C show the concentration profiles of the first component of the semiconductor material of the fifth embodiment of the present invention and its first and second variant active regions. Figure 7 is a first embodiment of the semiconductor material of the active region of the sixth embodiment of the present invention -31-200919883. 8A, 8B is a graph showing the concentration profile of the first component of the semiconductor material of the seventh embodiment of the present invention and its variant active region. Figure 9 is a graph showing the concentration profile of the first component of the semiconductor material of the active region of the eighth embodiment of the present invention. Fig. 10 is a view showing the concentration profile of the first component of the semiconductor material of the active region of the ninth embodiment of the invention. 1 1 A, Π B shows the concentration profile of the first component of the semiconductor material in the active region of the tenth embodiment of the present invention and its variant. [Main component symbol description] 1 Semiconductor layer sequence ^ 2 Growth substrate 3 First quantum well layer 4 Second quantum well layer 6 Symmetric plane 7 Field strength 値 3 1 First sub-region 32 Second sub-region 41, 42, 43 Second quantum well layer 5 1 terminal-position barrier layer 52 barrier layer 1 10 η -doped layer or layer sequence 111 η -contact layer -32- n-conductive layer n-charge carrier localized layer η -guide layer active region Ρ-conductive layer or layer sequence Ρ-doped layer Ρ - waveguide layer Ρ - charge carrier localized layer Ρ - contact layer field strength 値 concentration first distance second distance energy relative position -33-