TW200915350A - Aqueous dispersions of electrically conducting polymers containing inorganic nanoparticles - Google Patents
Aqueous dispersions of electrically conducting polymers containing inorganic nanoparticles Download PDFInfo
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- TW200915350A TW200915350A TW097127994A TW97127994A TW200915350A TW 200915350 A TW200915350 A TW 200915350A TW 097127994 A TW097127994 A TW 097127994A TW 97127994 A TW97127994 A TW 97127994A TW 200915350 A TW200915350 A TW 200915350A
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- PFZLGKHSYILJTH-UHFFFAOYSA-N thieno[2,3-c]thiophene Chemical compound S1C=C2SC=CC2=C1 PFZLGKHSYILJTH-UHFFFAOYSA-N 0.000 description 1
- NMFKEMBATXKZSP-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2.S1C=CC2=C1C=CS2 NMFKEMBATXKZSP-UHFFFAOYSA-N 0.000 description 1
- BHBIPLOIWQSVID-UHFFFAOYSA-N thiohypofluorous acid Chemical compound SF BHBIPLOIWQSVID-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- WGIWBXUNRXCYRA-UHFFFAOYSA-H trizinc;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O WGIWBXUNRXCYRA-UHFFFAOYSA-H 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229960000834 vinyl ether Drugs 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011746 zinc citrate Substances 0.000 description 1
- 229940068475 zinc citrate Drugs 0.000 description 1
- 235000006076 zinc citrate Nutrition 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
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Description
200915350 九、發明說明: 【發明所屬之技術領域】 η。之本發明係關於含有無機奈米顆粒之導電聚合物 組合物及其在電子器件中之應用。 【先前技術】 電子器件界疋一類包括活性層之產品。有機電子器件具 有至少-層有機活性層。該等器件將電能轉化為輕射(例 如發光二極體)’經由電子過程檢測信號,將輻射轉化為 電能(例如光伏打電池),或包括一或多層有機半導體層。 有機發光二極體(OLED)係包含能電致發光之有機層的 有機電子器件。含有導電聚合物之〇LED可具有以下組 態: ' 陽極/緩衝層/EL材料/陰極 以及電極之間之額外層。陽極通常係能夠將電洞注入£匕材 料中之任一材料,例如銦/錫氧化物(IT〇)。陽極視需要支 撐於玻璃或塑料基板上。EL材料包括螢光化合物、螢光及 磷光金屬錯合物、共軛聚合物及其混合物。陰極通常係能 將電子注入EL材料之任何材料(例如Ca*Ba)。具有在1〇-3 至10·7 S/cm範圍内之低電導率之導電聚合物通常用作與諸 如ITO等導電無機氧化物陽極直接接觸之緩衝層。 業内仍需要經改良緩衝層材料。 【發明内容】 本發明提供包含至少一種摻雜有至少一種高度氟化的酸 聚合物之導電聚合物之水性分散液的組合物,且其中分散 133332.doc 200915350 有無機奈米顆粒。 在另-實施例令提供自上述組合物形成之膜。 在另一實施例中提供包含至少-層包含上述膜之層之電 子器件。 【實施方式】 多個態樣及實施例閣述於本文中且僅係例示性而非限制 性。閱讀本說明書後習該項技術者應理解,在不背離 本發明範_情況下亦可存在其他態樣及實施例。 根據以下實施方式及中請專利範圍可明瞭任何―或多個 實施例之其他特徵及優點。實施方式首先闊述術語之定義 及闡釋’之後闡述導電聚合物、高度氣化的酸聚合物、益 機奈米顆粒、經摻雜導電聚合物組合物之製備、緩衝層:、 電子器件,且最後闡述實例。 1·說明書及申請專利範圍中所用術語之定義及闞釋 在詳細闡述下文所述實施例之前,定義或閣釋某 語。 — 術語"導體,,及其變化形式欲意指具有電子特性之層材 料、部件或結構,以使在電流流經此層材料、部件或結構 時電勢無明顯下降。術語意欲包括半導體。在某些實:例 中’導體可形成電導率為至之層。 術語"導電性”在表示材料時意指在不添加碳黑或導電金 屬顆粒之情況下固有地或本質上能導電之材料。 術語”聚合物"欲意指具有至少一種重複單體單元之材 料。術語包括僅具有-種或一類單體單元之均聚物、及具 133332.doc 200915350 有兩種或更多種不同單體單元之共聚物,包括自不同種類 單體單元形成之共聚物。 術語”酸聚合物"係指具有酸性基團之聚合物。 術語”酸性基團"係指能離子化以將氫離子供給布忍斯特 (Br0nsted)鹼之基團。 術《。间度氟化”係指化合物中至少9〇%與碳鍵結之可用 氫經氟替代。 術'吾70全氟*化”及"全氟化"可互換使用且係指化合物中 所有與碳鍵結之可用氫皆經氟替代。 組合物可包含一或多種不同導電聚合物及一或多種不同 高度氟化的酸聚合物。 術語"經摻雜"在表示導電聚合物時欲意指導電聚合物具 有聚合抗衡離子以平衡導電聚合物上之電荷。 術語"經摻雜導電聚合物”欲意指導電聚合物及與其相連 之聚合抗衡離子。 術語"層"與術語"膜”可互換使用且係指覆蓋期望區域之 塗層。該術語不受尺寸限制。區域可大至整個器件,或小 至諸如實際視覺顯示器等具體功能區域,或小至單一子像 素。層及膜可係藉由任何習知沈積技術來形成,其包括氣 相沈積、液相沈積(連續及不連續技術)、及熱轉移。 術奈米顆粒"係指粒度小於1 00 nm之材料。在某此實 施例中,粒度小於10 nm。在某些實施例中,粒度小一於5 nm ° ' 術語,’水性,,係指液體大部分係水,且在一實施例中至少 133332.doc 200915350 約40重量& 水。 在某些實施例中,至少約6。重量%係 节:語::傳輸"在表示層、材料、部件或結構時欲意指 :=、部件或結構有利於正電荷相對有效地以較小 電何相失穿過該層、材料、部件或結構之厚度遷移。 術語"電子傳輪,I a 該層、材料=Λ;Γ材料、部件或結構時,意指 4。卩件或結構可促進或_於貞電荷穿過該
枓、部件或結構遷移至另一層、材料、部件或結構 術語”有機電子器件"欲意指包括一或多層半導體層或材 料之1^件。有機電子器件包括(但不限於):⑴將電能轉化 為輻射之器件(例如發光二極體、發光二極體顯示器、二 極體雷射或發光面板)’ (2)經由電子過程檢測信號之器件 (例如光檢測器、光導電池、光敏電阻器、光電開關、光 …曰體、光電管、紅外線⑽,)檢測器、或生物感測 ™ ) (3)將輻射轉化為電能之器件(例如光伏打器件或太陽 此電池)’及(4)包括一或多個包括一或多層有機半導體層 之電子組件之器件(例如電晶體或二極體)。
本文所用術語"包含"、"包括"、,,具有"或其任何其他變 化形式皆意欲涵蓋非排他性包括之内容。舉例而言,包含 系列要素之製程、方法、物件或裝置不必僅限於彼等要 素且可包括未明確列出或該等製程、方法、物件或裝置所 口有的其他要素。此外,除非明確說明相反情況,否則 或係扣包含性”或||且不係排他性"或π。舉例而言,條件A 133332.doc 200915350 或B可藉由任一以下命題來滿足:A為真(或存在)且B為假 (或不存在)、A為假(或不存在)且B為真(或存在),及A與B 二者皆為真(或存在)。 同樣,使用"一"用於闡述本文所述之要素或組件。此舉 僅出於方便之目的及欲給出本發明範疇之概括認識。除非 明顯表示其他含義’否則此表述應理解為包括一或至少一 且單數形式亦包括複數形式。 對應於元素週期表中各欄之族編號使用見於c及c 〇/ 第 81 版(2000-2001) 中之”新符號”慣例。 除非另有說明’否則本文所用所有技術及科學術語皆具 有與熟習本發明所屬技術者通常所瞭解含義相同之含義。 在化學式中,字母Q、R、T、W、χ、γ及z係用於指示文 中所定義之原子或基團。所有其他字母皆係用於指示習用 原子符號。對應於元素週期表中各攔之族編號使用見於 CRC Handbook of Chemistry and Physics,赛%\版 中之"新符號"慣例。 對於本文未述及之範圍,已習知諸多關於具體材料、處 理方法及電路之細節且可參見關於有機發光二極體顯示 器、光源、光檢測器、光伏打及半導體部件技術之教科書 及其他來源。 2·導電聚合物 新組合物中可使用任一導電聚合物。在某些實施例中, 導電聚合物可形成電導率大於1〇-7 s/cm之膜。 133332.doc 200915350 適用於新組合物之導電聚合物係自至少—種在單獨聚合 時形成導電均聚物之單體來製備。在本文令該等單體稱作 ”導電前體單體"。在單獨聚合時形成不導電均聚物之單體 稱作"不導電前體單體"。導電聚合物可為均聚物或共聚 f。適用於新組合物之導電共聚物可自兩種或更多種導電 體或自-或多種導電前體單體與—或多種非導電前 體早體之組合來製備。 ::些實施例中,導電聚合物係自至少一種 導電則體單體來製備·、塞吩、吼略、苯胺、及多環芳= 化合物。術語"多環芳香族,,係指具有一 之 :合物。環可藉由-或多個鍵來連接,或其可稠::之 人物:Γ芳香族環"意欲包括雜芳環。”多環雜芳香族"化 D物具有至少一個雜芳環。 、化 在某些實施例中,導電聚合物係自至少 前體單體來製備:嘆吩、栖吩 種“以下之 Ο 環芳香族化合物。在本or 笨胺、及多 物在本文中自該等單體 稱作聚嗟吩、聚(碼吩)、聚(蹄吩)、聚=物分別 族聚合物。術語"多環芳香族”係指及 :::環之化合物。環可藉由-或多個鍵來連接,=上 L至-起。術語”芳香族環”意欲包括 ,1次其可 方香族”化合物具有至少一個雜 衣。'多環雜 多環芳香族聚合物係聚(。塞吩并心;在某些實施例中, 在某些實施例中,新組合物/ 單體包含以下式1: :形成導電聚合物之 J33332.doc 200915350
其中: Q 係選自由S、Se及Te組成之群;
R 經獨立選擇以在每次出現時相同或不同且其係選 自氫、烷基、烯基、烷氧基、烷醯基、烷硫基、 方軋基、烧基硫烧基、烧基芳基、芳基貌基、胺 基、烧基胺基、二烧基胺基、芳基、燒基亞續醯 基、院氧基烧基、烧基續酿基、芳硫基、芳基亞 石頁酿基、烧氧基魏基、芳基績酿基、丙烯酸基、 磷酸基、膦酸基'_素、硝基、氰基、羥基、環 氧基、矽烷基、矽氧烷基、醇基、苄基、羧酸酯 基、醚基、醚羧酸酯基、醯胺磺酸酯基、醚績酸 酯基、酯磺酸酯基及胺基曱酸酯基;或兩個R1基 團可一起形成構成3、4、5、6或7-員芳香族環或 環脂族環之伸烧基或伸稀基鏈,其中環視需要可 包括一或多個二價氮、砸、碲、硫或氧原子。 本文所用術語"烷基"係指衍生自脂肪族烴之基團且包括 未經取代或經取代之直鏈、具支鏈及環狀基團。術語,,雜 烷基"欲意指烷基,其中烷基内一或多個碳原子已經另一 原子(例如氮、氧、硫、及諸如此類)替代。術語"伸烷基” 係指具有兩個連接點之烷基。 本文所用術語"烯基”係指衍生自脂肪族烴且具有至少一 133332.doc •12- 200915350 個碳-碳雙鍵之基團,且包括可未經取代或經取代之直 鏈、具支鏈及環狀基團。術語"雜烯基,,欲意指烯基,其中 烯基内一或多個碳原子已經其他原子(例如氮、氧、硫、 及諸如此類)替代。術語”伸烯基"係指具有兩個連接點之烯 基。 本文所用以下取代基之術語係指下文所列之式. 醇基" 醯胺基” 醯胺磺酸酯基 苄基" 羧酸酯基" 醚" 醚羧酸酯基” 醚磺酸酯基" 酯磺酸酯基" 磺醯亞胺基·' 胺基甲酸酯基 -r3-oh -R3-C(0)N(R6)R6
-R3-C(〇)N(R6)R4_s〇3Z -CH2-C6H5
-R3-C(〇)〇_z或-R3-〇-c(〇)-Z -R3-(0-R5)p-〇-R5
_r3_o-r4-c(o)o-z 或-r3_〇_r4_〇_ C(0)-Z -r3-o-r4-so3z -R3-0-C(0)-R4-S03Z -R3-S〇2-NH-S〇2-R5 -r3-o-c(o)-n(r6)2 其中所有"R"基團在每次出現時皆可相同或不同且: R3為單鍵或伸烷基 R4為伸烷基 R5為烷基 R6為氫或烷基 P為0或介於1至20間之整數 133332.doc 13 200915350 2為幵、鹼金屬、鹼土金屬、n(R5)4或R5。 任一上述基團皆可另外未經取代或經取代,且任一基團 中之一或多個氫皆可經F取代,包括全氟化基團。在某些 實施例中,烷基及伸烷基具有丨-20個碳原子。 在某些實施例中’在單體中,兩個Ri 一起形成-w_ (CYlY2)m-W- ’ 其中 m係 2或 3,w係 〇、s ' Se、P〇、NR6, Y1在每次出現時係相同或不同且為氫或氟,且γ2在每次出 現時相同或不同且係選自氫、鹵素、烷基、醇基、醯胺磺 酉文基、苄基、叛酸酯基、謎基、謎緩酸酯基、喊續酸酯 基、酯磺酸酯基、及胺基曱酸酯基,其中γ基團可部分或 兀王氟化。在某些實施例中,所有γ皆為氫。在某些實施 例中聚合物為聚(3,4-伸乙基二氧基嘆吩)。在某些實施 例中,至少一個γ基團不為氫。在某些實施例中,至少一 個Υ基團係至少一個氫經F取代之取代基。在某些實施例 中’至少一個γ基團係全氟化。 在某些實施例中,單體具有式I(a): (C(R7)2),
其中: Q 係選自由S、Se及Te組成之群; 、烷基、雜 在每次出現時係相同或不同且係選自氫 133332.doc -14· 200915350 烷基、烯基、雜烯基、醇基、醯胺磺酸酯基、苄 基、羧酸酯基、醚基'醚羧酸酯基、醚磺酸酯基、 酯磺酸酯基及胺基甲酸酯基,其中前提條件係至少 一個R7不為氫,且 m係2或3。 在式1(a)之某些實施例中,m為2,一個R7為具有$個以 上碳原子之烷基,且所有其他R7皆係氫。 在式1(a)之某些實施例中,至少一個R7基團經氟化。在 某些實施例中,至少一個R7基團具有至少一個氟取代基。 在某些實施例中,R7基團經完全氟化。 在式1(a)之某些實施例中,單體之稠合環脂族環上之R7 取代基為單體提供在水中之經改良溶解性且有利於在氟化 酸聚合物存在下之聚合。 在式1(a)之某些實施例中,爪係2 , 一個R7為磺酸_伸丙 基·醚-亞曱基且所有其他R7皆為氫。在某些實施例中,瓜 係2,一個R7係丙基_醚_伸乙基且所有其他r7皆為氫。在某 些實施例巾,m係2, 一個R、甲氧基且所有其他r7皆為 氫。在某些實施例中,-個R?為石黃酸二敗亞甲基醋亞甲基 (-CH2-0-C(0)-CF2-S03H),且所有其他 R7皆為氫。 在某些實施例中,在新組合物中欲用於形成導電聚合物 之吡咯單體包含下式II, 133332.doc -15- 200915350
其中在式II中: R1 係獨立選擇以在每次出現時相同或不同且係選自 氫、烧基、烯基、烧氧基、炫醯基、院硫基、芳氧 基、烷基硫烷基、烷基芳基、芳基烷基、胺基、烷 基胺基、二烷基胺基、芳基、烷基亞磺醯基、烷氧 基烷基、烷基磺醯基、芳硫基、芳基亞磺醯基、烷 氧基羰基、芳基確醯基、丙烯酸基、填酸基、膦酸 基、鹵素、硝基、氰基、羥基、環氧基、矽烷基、 矽氧烷基、醇基、苄基、羧酸酯基、醚基、醯胺磺 酸酯基、醚羧酸酯基、醚磺酸酯基、酯磺酸酯基及 胺基甲酸酯基;或兩個R1基團可一起形成構成3、 4、5、6或7-員芳香族環或環脂族環之伸烷基或伸 烯基鏈’該環視需要可包括一或多個二價氮、硫、 石西、蹄或氧原子;且 R2經獨立選擇以在每次出現時相同或不同且係選自 氫、烷基、烯基、芳基、烷醯基、烷基硫烷基、烷 基芳基、芳基烷基、胺基、環氧基、矽烷基、矽氧 烷基、醇基 '苄基基、羧酸酯基、醚基、醚羧酸酯 基、醚磺酸酯基、酯磺酸酯基及胺基甲酸酯基。 在某些實施例中,R1在每次出現時皆係相同或不同且其 133332.doc 16 200915350 獨立選自氫、烷基、烯基、烷氧基、環烷基、環烯基、醇 基、节基、叛酸醋基、喊基、酿胺$黃酸醋基、鲢叛酸酉旨 基、醚磺酸酯基、酯磺酸酯基、胺基甲酸酯基、環氧基、 石夕烧基、石夕氧院基、及經一或多個績酸、缓酸、丙稀酸、 磷酸、膦酸、_素、硝基、氰基、羥基、環氧基、矽烷或 矽氧烷部分取代之烷基。 在某些實施例中,R2係選自氫、烧基及經一或多個石黃 酸、羧酸、丙烯酸、磷酸、膦酸、鹵素、氰基、羥基、環 氧基、矽烷或矽氧烷部分取代之烷基。 在某些實施例中,吡咯單體未經取代且R1及R2皆為氫。 在某些實施例中,兩個R1 —起形成6 -或7 -員環脂族環, 其進一步經選自以下之基團取代:烷基、雜烷基、醇基、 苄基、羧酸酯基、醚基、醚羧酸酯基、醚磺酸酯基、畴續 酸醋基及胺基甲酸酯基。該等基團可改良單體及所產生聚 合物之溶解性。在某些實施例中,兩個R1 —起形成6_或7_ 員環脂族環,其進一步經烷基取代。在某些實施例中,兩 個R1 —起形成6_或7_員環脂族環,其進一步經具有至少^固 碳原子之烧基取代。 在某些實施例中,兩個Ri 一起形成,其中 m為2或3 ’且γ在每次出現時皆係相同或不同且係選自 氫、烷基 '醇基、节基、羧酸酯基、醯胺磺酸酯基、醚 基、醚羧酸酯基、醚磺酸酯基、酯磺酸酯基及胺基甲酸酯 基。在某些實施例中,至少一個γ基團不為氫。在某些實 施例中,至少一個Y基團為其中至少一個氫經F取代之:代 133332.doc 17 200915350 基。在某些實施例中,至少_個γ基團經全氟化‘ 電聚合物 在某些實施例中,在新組合物中欲用於形成導 之苯胺單體包含下式ΙΗ, (R1)a
^nh2 (III) (H)b-l 其中: a為0或1至4之整數; b為1至5之整數’其中前提條件係a+b=5 ;且 R1獨立經選擇以在每次出現時相同或不同且係選自氫、烷 土稀基貌氧基、烧酿基、烧硫基、芳氧基、烧基硫烧 基、烧基芳基、芳基烧基、胺基'烧基胺基、二燒基胺 基、芳基、烷基亞磺醯基、烷氧基烷基、烷基磺醯基、芳 硫基、芳基亞磺醯基、烷氧基羰基、芳基磺醯基、丙烯酸 基、磷酸基、膦酸基、鹵素、硝基、氰基、羥基、環氧 基、石夕烧基、矽氧烷基、醇基、节基、羧酸酯基、醚基、 醚羧酸酯基、醯胺磺酸酯基、醚磺酸酯基、酯磺酸酯基及 胺基曱酸醋基;或兩個Ri基團可一起形成構成3、4、5、6 或7-員芳香族環或環脂族環之伸烷基或伸烯基鏈,其中該 環視需要可包括一或多個二價氮、硫或氧原子。 在聚合時’苯胺單體單元可具有以下所示式IV(a)或式 IV(b)、或兩式之組合, 133332.doc -18· 200915350
IV(b) 在某些實施例中,苯胺單體未經取代且a=〇。 在某一實施例中,a不為〇且至少一個r1經氣化。在某些 實施例中,至少—個R1經全氟化。 在某些實施例中,力如_ &人, 在新組合物中欲用於形成導電聚合物 之稍合多環雜芳香族星拼目士 班 关早體具有兩個或更多個稠合芳香族 %,其中至少一個係雜# 雜方香族。在某些實施例中,稠合多 環雜芳香族單體具有式乂 .
其中 Q係 S、Se、Te或]vjr6 . R6為氫或烷基; R8、R9、RlRll 或不同且係選自 獨立經選擇以在每次出現時 氫、烷基、烯基、烷氧基、 皆係相 炫酿基 同 133332.doc -19- 200915350 烷硫基、芳氧基、烷基硫烷基、烷基芳基、芳基烧 基、胺基、烧基胺基、二烧基胺基、芳基、燒基亞績 醯基、院氧基烧基、烧基續酿基、芳硫基、芳基亞續 醯基、烧氧基幾基、芳基續醯基、丙烯酸基、填酸 基、膦酸基、齒素、硝基、腈基、氰基、羥基、環氧 基、矽烷基、矽氧烷基、酵基、节基、羧酸酯基、醚 基、醚羧酸酯基、醯胺磺酸酯基、醚磺酸酯基、酯磺 酸酯基及胺基甲酸酯基;且 R8與R9、119與1110、及尺1〇與Rh中至少一對一起形成構成 5或6-員芳香族環之伸烯基鏈,該環視需要可包括一或 多個二價氮、硫、碼、碲或氧原子。 在某些實施例中,稠合多環雜芳香族環單體具有選自由 下式組成之群之式:V(a)、V(b)、v(c)、v(d)、v(e)、 v(f)、v(g)、v(h)、v⑴、v⑴、及 v(k):
133332.doc -20- 200915350
其中: Q係 S、Se、Te或 NH ;且 T在每次出現時係相同或不同且係選自s、nr6、ο、 SiR62、Se、Te及 PR6 ; Y係N ;且 R6為氫或烧基。 稍合多環雜芳香族單體可另外經選自下列之基團取代: 烧基、雜烷基、醇基、节基、羧酸酯基、醚基、醚羧酸酉旨 基、醚磺酸酯基、酯磺酸酯基及胺基甲酸酯基。在某些實 i33332.doc -21 200915350 施例中,取代基係經敦化。在某些實施例中,取代基係經 完全氟化。 在某些實施例中,稠合多環雜芳香族單體係噻吩并(噻 吩)。該等化合物論述於(例如)Macrom〇lecules,34,5746- 5747 (2001)及 Macromolecules,35,7281-7286 (2002)中。 在某些實施例中’噻吩并(噻吩)係選自噻吩并(2,3_b)噻 吩、噻吩并(3,2-b)噻吩、及噻吩并(3,4_b)噻吩。在某些實 施例中,噻吩并(噻吩)單體另外經至少一個選自下列之基 團取代:烷基、雜烷基、醇基、苄基、羧酸酯基、醚基、 醚羧酸酯基、醚磺酸酯基、酯磺酸酯基及胺基甲酸酯基。 在某些實施例中,取代基係經氟化。在某些實施例中,取 代基經完全氟化。 在某些實施例中’在新組合物中欲用於形成聚合物之多 環雜芳香族單體包含式VI :
其中: 、Se、Te及 PR6 ; Q係 S、Se、Te或 NR6 ; τ係選自 S、NR6、〇、SiR62、Se、Tej E係選自伸烯基、伸芳基及伸雜芳基; R為氫或燒基; 133332.doc -22· 200915350
R12每次出現時皆係相同或不同且係選自氫、烷基、 烯基、烷氧基、烷醯基、烷硫基、芳氧基、烷基 硫烧基、烧基芳基、芳基烧基、胺基、烧基胺 基、二烷基胺基、芳基、烷基亞磺醯基、烷氧基 烷基、烷基磺醯基、芳硫基、芳基亞磺醯基、烷 氧基艘基、芳基續醯基、丙烯酸基、填酸基、膦 酸基、i素、硝基、腈基、氰基、羥基、環氧 基、矽烷基、矽氧烷基、醇基、苄基、羧酸酯 基、醚基、醚羧酸酯基、醯胺磺酸酯基、醚磺酸 S旨基、酯磺酸酯基及胺基曱酸酯基;或兩個RU 基團可一起形成構成3、4、5、6或7員-芳香族環 或環脂族環之伸炫*基或伸烯基鏈,其中該環視需 要可包括一或多個二價氮、硫、硒、碲或氧原 子0 在某些實施例中,導電聚合物係前體單體與至少一種第 二單體之共聚物。可使用任一類型之第二單體,只要其對 共聚物之期望特性無有害影響。在某些實施例中,以單體 單元之’纟《量汁,第一單體佔聚合物之5〇0/。以下。在某些實 施例中’以單體單元之總量計,第二單體佔聚合物之观 以下。在某些實施例中’以單體單元之總量計,第二單體 佔10%以下。 第二單體之實例性類型包括(但不限於)烯基、炔基、伸 方基及伸雜芳基。第二單體之實例包括(但不限於)第…亞 二嗤、嚷二唾、笨并嗔二唾、伸笨基伸乙稀基、伸笨基: 133332.doc •23- 200915350 乙炔基、比啶、一嗪、及三嗪,所有該等基團皆可進一步 經取代。 在某些實施例中,共聚物係藉由首先形成具有結構A-B-:之中間體前體單體來製造,其中AK代表相同或不同之 則體早體’且B代表第二單體。a_b_c中間體前體單體可 使用標準合成有機技術來製備,例如γ__〇、以心、 Grignard複分解反應、Suzuki、及心以虬丨偶合反應。然後 藉由中間體前體單體單獨或與一或多種額外前體單體之氧 化聚合來形成共聚物。 在某些實施例中,導電聚合物係選自由以下組成之群: 聚噻吩、聚吡咯、聚合稠合多環雜芳香族化合物、其共聚 物、及其組合。 在某些實施例中,導電聚合物係選自由以下組成之群: 聚(3,4-伸乙基二氧基噻吩;)、未經取代之聚吡咯、聚(噻吩 并(2,3-b)噻吩)、聚(噻吩并(3,2_b)噻吩)、及聚(噻吩并 (3,4-b)嗟吩)。 3.高度氟化的酸聚合物 高度氟化的酸聚合物("HFAP")可為經高度氟化且含有具 有酸性質子之酸性基團之任一聚合物。酸性基團供應可離 子化質子。在某些實施例中,酸性質子具有小於3ipKa。 在某些實施例中,酸性質子具有小於〇之pKa。在某些實施 例中’酸性質子具有小於·5之PKa。酸性基團可與聚合物 主鍵直接連接’或其可與聚合物主鏈上之側鏈連接。1性 基團之實例包括(但不限於)叛酸基團、磺酸基團、確醯亞 133332.doc -24- 200915350 胺基團、碟酸基團、膦酸基團、及其組合。酸性基團可皆 相同,或聚合物可具有一種以上類型之酸性基團。在某些 實施例中’酸性基團係選自由以下組成之群:績酸基團、 磺酿胺基團、及其組合。 纟某些實施例中,HFAP係至少95%氟化;在某些實施例 中’其係完全氟化。 •在某些實施例中,HFAP係水溶性。在某些實施例中, HFAP可分散於水中。在某些實施例中,Η·可經有機溶 ”刺潤濕。術語"有機溶劑可调濕"係指在形成膜時,材料與 有機溶劑之接觸角不大於贼。在某些實施例中,可潤濕 材料形成可由苯基己烧潤濕之膜,其中接觸角不大於 55。。量測接觸角之方法為人所熟知。在某些實施例中, 可潤濕材料可藉由聚合酸來製備,該聚合酸自身不可潤濕 但選擇性添加劑可使其變為可潤濕。 適宜聚合物主鏈之實例包括(但不限於)聚烯烴、聚丙烯 〇 ㈣、聚甲基丙稀酸醋 '聚亞醯胺、聚酿胺、聚芳酿胺、 聚丙稀酿胺、聚苯乙浠、及其共聚物,所有該等皆係高度 氟化;在某些實施例中,係完全氟化。 在-實施例中,酸性基團係續酸基團或㈣亞胺基團。 續醯亞胺基團具有下式: "S〇2~NH~S〇2"R 其中R係烷基。 在-實施射,酸性基團位純化側鏈上。在—實施例 中,氣化側鍵係選自燒基、烧氧基、醯胺基、_、及其 133332.doc -25- 200915350 組合,所有該等皆經完全氟化。 在一實施例中,HFAP具有高度氟化烯烴主鏈、及側基 高度氟化烷基磺酸酯、高度氟化醚磺酸酯、高度氟化酯磺 酸酯、或高度氟化醚磺醯亞胺基團。在一實施例中, HFAP係具有全氟-醚-績酸側鏈之全氟烯烴。在一實施例 中,聚合物係1,1-二氟乙烯與2-(1,1-二氟-2·(三氟甲基)烯 丙氧基)-1,1,2,2-四氟乙磺酸之共聚物。在一實施例中,聚 合物為乙烯與2-(2-(1,2,2-三氟乙烯氧基)-^,2,3,3,3-六氟 丙氧基)-1,1,2,2-四氟乙磺酸之共聚物。可將該等共聚物製 備為對應績醯氟聚合物之後可將其轉化為績酸形式。 在一實施例中,HF AP係經氟化及部分確化之聚(伸芳基 醚硬)之均聚物或共聚物。共聚物可為嵌段共聚物。 在一實施例中’ HFAP係具有式IX之項醯亞胺聚合物:
其中:
Rf係選自高度氟化伸烷基、高度氟化雜伸烷基、高度 氟化伸芳基、及高度氟化伸雜芳基,其可經一或多 個謎氧取代;且 η至少為4。 在式IX之一實施例中,Rf係全氟烷基。在一實施例中,Rf 係全氟丁基。在—實施例中,1含有醚氧。在一實施例 133332.doc -26- 200915350 中,η大於1 0。 在一實施例中,HFAP包含高度氟化聚合物主鏈及具有 式X之側鏈: -OR15-S〇2-NH-(S02-N-S〇2-N)a-S02R16 (X) Η Η 其中: R15係高度氟化伸烷基或高度氟化雜伸烷基; R16係高度氟化烷基或高度氟化芳基;且 a為0或1至4之整數。 在一實施例中,HFAP具有式XI ·· (CF2-CF2)c-(CF2-CF> π (XI) 0」 (CF2-CF-0)c-(CF2)c-S02-N-(S02-(CF2)c-S02.N)c-S02R16 Η Η R16 其中:
R16係南度氣化炫《基或面度氣化芳基; c獨立地為0或自1至3之整數;且 η至少為4。 HFAP之合成闡述於(例如)以下文獻中:A. Feiring等 人,J. Fluorine Chemistry 2000, 105, 129-135 ; A. Feiring 等人,Macromolecules 2000, 33, 9262-9271 ; D. D.
Desmarteau, J. Fluorine Chem. 1995, 72, 203-208 I A. J. Appleby 等人,J. Electrochem. Soc. 1993, 140(1), 109- 133332.doc -27- 200915350 111;及〇631^咖311,美國專利第5,463,005號〇 在一實施例中,HFAP亦包含衍生自至少一種高度敦化 烯系不飽和化合物之重複單元》全氟烯烴包含2至2〇個碳 原子。代表性全氟烯烴包括(但不限於)四氟乙烯、六氣两 烯、全氟-(2,2-二甲基-1,3·二氧雜環戊烯)、全氟_(2_亞甲 基-4-甲基-1,3-二氧戊環)、CF2=CFO(CF2)tCF = CF2(其中⑽ 1或2)、&Rf’’〇CF=CF2(其tRf’'係具有i至約10個碳原子之 飽和全氟烷基)。在一實施例中,共單體係四氟乙稀。 在一實施例中,HFAP係膠體形成聚合酸。本文所用術 語"膠體形成•'係指不溶於水且在分散於水性介質中時形成 膠體之材料。膠體形成聚合酸通常具有介於約1〇,〇〇〇至約 4,000,000之間之分子量。在一實施例中,聚合酸具有約 100,000至約2,000,000之分子量。膠體粒度通常為2奈米 (rim)至約140奈米。在一實施例中,膠體之粒度為2 nm至 約30 nm。可使用任何具有酸性質子之高度氟化膠體形成 聚合材料。 可以非酸形式形成上文所述某些聚合物,例如鹽、醋、 或磺醯氟。如下文所述,可將其轉化為酸形式以供製備導 電組合物。 在某些實施例中,HFAP包括高度氟化碳主鏈及表示為 下式之側鏈 -(0-CF2CFRf3)a-〇_CF2CFRf4S03E5 其中Rf3及Rf4獨立地選自F、Cl或具有1至丨0個碳原子之高 度敗化烧基,a=〇、1或2 ’及E5。在某些情況下E5可為諸 133332.doc -28· 200915350 如Li、Na、或K等陽離子,且可將其轉化為酸形式。 在某些實施例中,HFAP可為揭示於美國專利第 3,282,875號及美國專利第4,358,545號及第4,94〇,525號中 之聚合物。在某些實施例中,HFAP包含全氟碳主鏈及表 示為下式之側鏈 -o-cf2cf(cf3)-o-cf2cf2so3e5 其中E5係如上文所定義。此類hfap揭示於美國專利第 3,282,875號中且可藉由以下方式來製備:四氟乙稀(TFE) 與全氟化乙烯基醚 CF2=CF-〇-CF2CF(CF3)-〇-CF2CF2S02F (即全氟(3,6-一氧雜-4-甲基-7-辛烯磺醯氟)(?1)]^〇17))共聚 合,且隨後藉由磺醯氟基團之水解使其轉化為磺酸根基 團,且視需要實施離子交換以將其轉換為期望離子形式。 美國專利第4,358,545號及第4,940,525號中所揭示類型聚合 物之實例具有側鏈-O-CFaCFJOsE5,其中E5係如上文所定 義。此聚合物可藉由以下方式來製備:使四氟乙烯(TFE) 與全敦化乙烯基醚CF2=CF-0-CF2CF2S02F(即全1(3-氧雜· 4-戊烯磺醯氟)(p〇pf)共聚合,隨後實施水解且視需要實 施進一步離子交換。 —類HFAP可以水性Nafion®*散液自E j如p〇nt心
Nemours and Company (Wilmington,DE)購得。 4·無機奈米顆粒 無機奈米顆粒可為絕緣體或半導體。 在某些實施例中,無機奈米顆粒係金屬硫化物或金屬氧 化物。半導體金屬氧化物之實例包括(但不限於)混合價金 133332.doc 29· 200915350 屬氧化物(例如亞錄酸鋅)、及非化學計量金屬氧化物(例如 缺氧的三氧化紹'五氧化鈒、及諸如此類)。絕緣性金屬 氧化物之實例包括(但不限於)二氧化鈦、氧化錯、三氧化 翻、氧化釩、及氧化鋁。 在某些實施例中,奈米顆粒之表面經偶合劑處理以與水 性導電聚合物相容。表面修飾劑之種類包括(但不限於)矽 烷、鈦酸鹽、鍅酸鹽、銘酸鹽及聚合物分散劑。表面修飾 劑含有化學官能團’其實例包括(但不限於)腈、胺基、氰 基、烧基胺基、院基、芳基、烯基、院氧基、芳氧二、續 ,、丙烯酸、磷酸、及上述酸之鹼金屬鹽、丙烯酸酯基、 %酸醋基、醯胺續酸酯I、喊基、㈣酸g旨基、自旨續酸醋 基、烧硫基、及芳硫基。在一實施例中,化學官能團可包 括諸如環氧基、院基乙稀基及芳基乙烯基等交聯劑以在相 鄰上層上與奈米-複合物或電洞_傳輸材料中之導電聚合物 反應。在一實施例中’表面修飾劑經氣化或全氣化,例如 四氟-乙基三氟-乙烯基-醚三乙氧基矽烷、全氟丁烷-三乙 氧基矽烷、全氟辛基三乙氧基矽烷、雙(三氟丙基)_四甲基 曱夕基胺及雙(3-二乙氧基甲石夕烧基)丙基四硫化物。 5·經摻雜導電聚合物組合物之製備 在以:論述中,導電聚合物、HFAP、及無機奈米顆粒 皆係指單數形式。然而應理解,可使用一種以上之任一或 所有該等物質。 新導電聚合物組合物係藉由首先形成經摻雜導電聚合物 然後添加無機奈米顆粒來製備。 133332.doc -30- 200915350 經#雜導電聚合物係藉由在HFAP存在下於水性介質中 使前體單體發生氧化聚合來形成。聚合反應已闡述於經公 開美國專利申請案第2004/0102577號、第2004/0127637號 及第2005/205860號中。 可將無機奈米顆粒直接以固體形式添加至經摻雜導電聚 合物分散液中。在某些實施例中,使無機奈米顆粒分散於 水/谷液中’且使此分散液與經摻雜導電聚合物分散液混 合。奈米顆粒與導電聚合物之重量比在〇1_1〇〇範圍内。
在某些實施例中,在添加無機顆粒之前或之後升高pH。 在約2之已形成pH至中性pH範圍内,經摻雜導電聚合物與 無機奈米顆粒之分散液保持穩定。在添加奈米顆粒之前, 可藉由用陽離子交換樹脂處理來調節pH。在某些實施例 中,藉由添加鹼性水溶液來調節pH。鹼之陽離子可為(但 不限於)鹼金屬、鹼土金屬、銨、及烷基銨。在某些實施 例中,鹼金屬陽離子較鹼土金屬陽離子為佳。 在下文中自纟文所述新導電組合物製備之膜稱為"本文 所述新膜T使用液體沈積技術來製備膜,包括連續及 不連續技術。連續沈積技術包括(但不限於)旋塗' 凹板塗 佈、幕塗、浸塗、槽模塗佈、喷塗 連續沈積技術包括(但不限於)嘴墨 網印刷。 、及連續喷嘴塗佈。不 印刷、凹版印刷、及絲 由此形成之膜平滑且相對透明,折射率大於Μ(在糊 nm波長下),且電導率可在1().7至1(r3s/e_圍内。 6.煖衝層 133332.doc •31 · 200915350
本發月$ f施例中提供自包含新導電聚合物組合物 之水)·生分散液沈積之緩衝層。術語"緩衝層”或"缓衝材料” 欲忍私有機電子器件中可具有一或多種功能之導電或半導 電材=,其功能包括(但不限於)平面化底層、電荷傳輪及/ 或電荷1人特性、清除諸如氧或金屬離子等雜質、及有利 於或可改良有機電子器件性能之其他態樣。術語"層,,與術 語”臈”可互換使用且係指覆蓋期望區域之塗層。該術語不 受尺寸限制。區域可大至整個器#,或小至諸如實際視覺 顯示器等具體功能區域,或小至單—子像素。層及膜可係 藉由任何習知沈積技術來形成,*包括氣相沈積、液相沈 積(連續及不連續技術)、及熱轉移。連續沈積技術包括“旦 不限於)旋塗、凹板塗佈、幕塗、浸塗、槽模塗佈、喷 塗、及連續噴嘴塗佈。不連續沈積技術包括(但不限於)喷 墨印刷、凹版印刷、及絲網印刷。 新導電聚合物組合物之經乾燥膜一般不能再分散於水 中。因此可以多層薄層形式使用緩衝層。此外,緩衝層可 經不同水溶性或水分散性材料層塗覆而不受損。令人驚訝 地’已發現包含新導電聚合物組合物之緩衝層具有經改良 在另-實施例中提供自包含摻合有其他水溶性或水分散 性材料之新導電聚合物組合物之水性分散液沈積之 層。可添加材料類型之實例包括(但不限於)聚合 :劑、有機及無機導電墨水及糊劑、電荷傳輸材 料、父聯劑、及其組合。其他水溶性或水分散性材料可為 133332.doc •32· 200915350 s單刀子或聚口物。適宜聚合物之實例包括(但不限於)導 電聚合物,例如聚噻吩、聚苯胺、聚吡咯、$乙炔、聚 (噻吩并噻吩)、及其組合。 7·電子器件 在本發明另一實施例中提供包含至少一層位於兩電接觸 層之間之電活性層之電子器件,其中該器件另外包括新緩 衝層術6吾電活性”在表示層或材料時欲意指表現電子或 冑帛射特性之層或材料。在接收輻射時,電活性層材料 丨 可發射輻射或表現電子-電洞對之濃度變化。 如巴1所示’典型器件1〇〇具有陽極層110,緩衝層120, 電丨生層丨3〇、及陰極層150。與陰極層150相鄰者為可選 電子注入/傳輸層140。 器件可包括可毗鄰於陽極層11〇或陰極層15〇之支撐件或 基板(未示出)。在大多數情況下,支撐件毗鄰陽極層110。 支撑件可為撓性的或剛性的、有機的或無機的。支撐件材 ◎ 料之實例包括(但不限於)玻璃、陶瓷、金屬及塑料膜。 %極層110為與陰極層相比可更有效注入電洞之電 極。陽極可包括含有金屬、混合金屬、合金'金屬氧化物 或混合氧化物之材料。適宜材料包括第2族元素(即Be、 Mg、Ca、Sr、Ba、Ra)、第u族元素、第4、5及6族元素 及第8-10族過渡元素之混合氧化物。若陽極層1丨〇可透 光’則可使用第12、13及14族元素之混合氧化物,例如銦 —錫氧化物。本文所用短語"混合氧化物"係指具有選自第 2族元素或第12、13或14族元素之兩種或更多種不同陽離 133332.doc -33- 200915350 子之氧化物。陽極層no材料之某些非限制性具體實例包 括(但不限於)銦-錫-氧化物("ITO”)、銦-鋅-氧化物、紹_錫_ 氧化物、金、銀、銅及錄。陽極亦可包含有機材料,尤其 諸如聚苯胺等導電聚合物’包括如,,Flexible Hght_emitting diodes made from soluble conducting polymer" » Nature -第357卷,第477-479頁(1992年6月U日)中所述之例示性材 料。陽極及陰極中至少一個應至少部分透明以容許觀測所 產生光。 陽極層110可藉由化學或物理氣相沈積製程或旋轉澆注 製程來形成。化學氣相沈積可以經電漿加強之化學氣相沈 積("PECVD")或金屬有機化學氣相沈積("m〇cvd")實施 物理氣相沈積可包括所有形式之濺射,包括離子束濺射以 及電子束蒸發及電阻蒸發。物理氣相沈積之具體形式包括 rf磁控管濺射及電感_合電毁物理氣相沈積(警_ PVD")。該等沈積技術在半導體製造業中已為吾人所熟 知0 Ο 在-實施例中,在微影作業期間陽極層ιι〇經圖案化。 圖案可根據需要而改變。在施用第一電接觸層材料之前可 藉由(例如)將圖案化遮罩或光阻劑置於第—撓性複 結構上來形成圖案化層。或者,亦可以整體層形式(亦稱 為毯覆沈積)施用層,並隨後使用(例如)經圖案化光阻層及 濕化學或幹蝕刻技術來實施圖索 曰 其他圖案化製程。 ^晃、$之 緩衝層120包含本文所述新導
導電組合物。自摻雜有HFAP 133332.doc -34- 200915350 之導電聚合物製備之緩衝層一般不能由有機溶劑潤濕且折 射率低於14在460 nm波長下)。本文所述緩衝層可潤濕性 更強且由此更易於經來自非極性有機溶劑之下一層塗佈。 本文所述緩衝層之折射率亦可大於丨4(在46〇 nm下)。通常 使用熟習此項技術者熟知之各種技術將緩衝層&積於基板 上。上文所述典型沈積技術包括氣相沈積、液相沈積(連 續及不連續技術)、及熱轉移。 未顯示可選層可存於緩衝層12〇與電活性層13〇之間。此 層可包含電洞傳輸材料。電洞傳輸材料之實例由γ. Wang 概述於(例如)Kirk-〇thmer Encyclopedia of Chemical Technology(第 4版,第 18卷’第 837-860 頁,1996)中。可 使用電洞傳輸分子及聚合物二者。常用電洞傳輸分子包括 (但不限於):4,4’,4”-三(N,N-二苯基_胺基)_三苯基胺 (TDATA) ; 4,4’,4"-三(N-3-甲基苯基_N-苯基-胺基)-三苯基 胺(MTDATA) ; N,N,-二苯基-N,N'-雙(3-曱基苯基)-[1,1,·聯 苯基]-4,4’-二胺(TPD) ; 1,1_雙[(二-4-曱苯基胺基)苯基]環 己烷(TAPC) ; N,N’-雙(4-曱基苯基)-N,N,-雙(4-乙基苯基)-[1,1'-(3,3'_二甲基)聯笨基]-4,4'-二胺(ETPD);四-(3 -甲基 苯基)-Ν,Ν,Ν’,Ν·-2,5-伸苯基二胺(PDA) ; α-苯基-4-N,N-二 苯基胺基苯乙烯(TPS);對-(二乙基胺基)苯甲醛二苯基腙 (DEH);三苯胺(TPA);雙[4-(N,N-二乙基胺基)·2_曱基苯 基](4-曱基苯基)曱烷(ΜΡΜΡ) ; 1-苯基_3_[對_(二乙基胺基) 苯乙稀基]-5-[對-(二乙基胺基)苯基]D比。坐琳(PPR或 DEASP) ; 1,2-反-雙(9Η- η卡唑-9-基)環丁烷(DCZB); 133332.doc •35· 200915350 ν,ν,ν’,ν·,("基苯基Hu,-聯 N,N,-雙(萘小基 私(TTB), 又(本基)聯本胺(α-ΝΡΒ);及卟啉 類化δ物’例如銅献菁。當用當,门括& 骨吊用電洞傳輸聚合物包括(但不 限於)聚乙烯基味0坐、 νΛ 吁上(本基甲基)聚矽烷、聚(二氧基噻 聚本胺及聚料。亦可藉由將電洞傳輪分子(例如上 述之彼等)摻雜至諸如聚苯乙烯及聚碳酸醋等聚合物 獲得電洞傳輪聚合物。 端視器件之應用’電活性層13〇可係藉由施加電壓來激 發之發光層(例如在發光二極體或發光電化學電池中),或 係響應輻射能且在施加或不施加偏t電壓之情況下產主信 號之材料層(例如在光檢測器中)。在—實施例中,電活性 材料係有機電致發光(”EL”)材料。任何ELM料皆可用於器 件中’其包括(但;Ϊ;限於)小分子有機螢光化合物、榮光及 磷光金屬錯合物、共軛聚合物、及其混合物。螢光化合物 之實例包括(但不限於)嵌二萘、茈、紅螢烯、香豆素、其 何生物、及其混合物。金屬錯合物之實例包括(但不限於) 金屬錯合之類噁辛化合物,例如,三(8_羥基喹啉根基)鋁 (Alqd,環金屬化銥及鉑電致發光化合物,例如銥與苯基 吡啶、苯基喹啉、或苯基嘧啶配體之錯合物(如Petr〇v等 人’美國專利第6,670,645號及公開之PCT申請案WO 03/063 555及WO 2004/016710中所揭示者)及有機金屬錯合 物(例如公開之PCT申請案w〇 03/008424、WO 03/091688 及WO 03/040257中所揭示者);及其混合物。 人在美國專利弟6,303,238號中及Burrows與Thompson在公 133332.doc -36- 200915350 開PCT申請案WO 00/7065 5及wo 01/41512中已闡述包含帶 電主體材料及金屬錯合物之電致發光層。共軛聚合物之實 例包括(但不限於)聚(伸苯基伸乙烯基)' 聚第、聚(螺二 苐)、聚嚷吩、聚(對-伸苯基)、其共聚物、及其混合物。 可選層140可用於促進電子注入/傳輸兩種作用,且亦可 用作封閉層以防止反應在層界面中止。更具體而言,層 140可促進電子遷移且在層13〇與】5〇原本可直接接觸之情 況下降低反應中止之可能性。可選層i4〇材料之實例包括 (但不限於)金屬錯合之類噁辛化合物,例如雙(2_甲基_8_喹 啉根基)(對-苯基-酚根基)鋁(III) (BA1Q)及三(8羥基喹啉根 基)鋁(Alqs);四(8-羥基喹啉根基)鍅;唑類化合物,例如 2-(4-聯苯基)_5_(4-第三丁基苯基兴^,‘噁二唑(pBD)、> (4-聯苯基)-4-苯基-5-(4-第三丁基苯基)4,2,4_三唑(TAZ)、 及1,3,5-三(苯基_2-苯并咪唑)苯(1^]31);喹噁啉衍生物, 例如2,3-雙(4-氟苯基)喹噁啉;菲咯啉衍生物,例如9,1〇· 二苯基菲咯啉(DPA)及2,9_二甲基_47_二苯基_ul〇_菲咯啉 (DDPA),及其任何一或多種組合。或者,可選層可係 無機的且包含Ba〇、UF、U2〇或諸如此類。 陰極層150係可尤其有效地注入電子或負電荷載流子之 電極。陰極層150可為功函數低於第一電接觸層(在此狀況 下私陽極層110)之任何金屬或非金屬。本文所用術語"較 低功函數"欲意指材料之功函數不大於約4 4 eV ^本文所用 術扣較回功函數"欲意指材料之功函數為至少約4 4 。 陰極層之材料可係選自第1族鹼金屬(例如Li、Na、K、 133332.doc -37- 200915350
Rb、Cs)、第2族金屬(例如Mg、Ca、Ba、或諸如此類卜 第12族金屬、鑭系元素(例如Ce、Sm、Eu、或諸如此類卜 及婀系元素(例如Th、U、或諸如此類)。亦可使用諸如 鋁、銦、紀等材料及其組合。陰極層15〇之材料之非限制 性具體實例包括(但不限於):鋇、鋰、鈽、铯、銪、铷、 在乙、鎂、釤、及其合金及組合。 '陰極層150通常係#由化¥或物s氣相;尤㈣程來形 成。在某些實施例中,陰極層可經圖案化,如上文參照陽 極層1 10所述。 考慮到欲由該等層提供之功能,器件+之其他層可由已 知可用於該等層之任何材料來製備。 某二實施例中,封裝層(未示出)係沈積於接觸層1 5 〇 上以防止諸如水及氧等不期望組份進入器件丨〇〇。此等組 份對有機層130具有有害影響。在—實施财,封裝層係 P早壁層或膜。在-實施例中,封裝層係玻璃蓋。 儘管未繪示,但應瞭解器件100可包含額外層。或者可 使用業内%知之其他層。此外’任一上述層可包含兩層或 更多層子層或可形成疊層結構。或者,陽極層110、電洞 傳輸層120、電子傳輸層140、陰極層150、及其他層中之 某,或全部可經處理(具體而言經表面處理)以提高器件之 電何載抓子傳輸效率或其他物理特性。較佳藉由平衡下述 目標來確定各組件層材料之選擇:結合器件工作壽命因素 提供具有n器件效率之器件、製造時間及複雜性因素及其 他已為A S此項技術者所瞭解之因素。應瞭解最佳組件、 133332.doc -38- 200915350 組件組態及組成性質應由彼等普通熟習該項技術者例行確 定。 在一實施例中,不同層具有下列厚度範圍:陽極丨丨0, 5 00-5 000 A ’在一實施例中為1000-2000 A ;緩衝層120, 50-2000 A ’在一實施例中為200-1 000 A ;光活性層13〇, 10-2000 A ’在一實施例中為loo-iooo A ;可選電子傳輪声 140,50-2000 A,在一實施例中為 100-1000 A ;陰極 15〇, 200-10000 A,在一實施例中為300-5000 A。每一層之相對 厚度可影響電子-電洞重組區域在器件中之位置,且由此 影響器件之發射光譜。因此電子傳輸層之厚度應經選擇以 使電子-電洞重組區域位於發光層中。期望層厚度比可取 決於所用材料之確切性質。 之沈積’此產生各個發光像素。 。在某些OLED(稱作被動矩
活性有機膜之沈積。 在作業中,對器件100施加來自適宜電源(未繪示)之電 壓。因此電流穿過器件100中之各層。電子進入有機聚合 物層,從而釋放光子。在某些OLED(稱作主動矩陣0LED 顯示器)中,可藉由電流經過獨立地激發各光活性有機膜
。此外,材 133332.doc -39. 200915350 料、方法及實例僅係例示性而非意欲限制本發明。 應瞭解,為清楚起見,在分開實施例上下文中所述之本 發明某些特徵亦可在單一實施例中組合提供。相反,為簡 潔起見,於單一實施例上下文中所述之本發明各特徵亦可 分開提供或以子組合方式提供。此外,以範圍形式提及數 值時,其包括此範圍内之每一及各個數值。 實例
比較實例A 此比較實例闡釋未添加無機奈米顆粒之pAni/ Nafion®(聚(四氟乙烯)/全I醚磺酸)膜之低電導率及不可 潤濕性。 此實例中所用PAni/Nafion®分散液係使用EW(酸當量)為 1000之水性Nafion®膠體性分散液來製備。μ% (w/w)之 Nafion®分散液係使用與美國專利第6,15〇,426號中實例1之 部分2之程序類似之程序來製備,但溫度為約270°c且之後 經水稀釋而形成12.0% (w/w)分散液以供聚合。 在500 mL·反應釜中加入96.4 g 12%固體含量之Nafion® 刀散液(11.57 mmol SO3H基團)、1〇3 g水。使用具有雙級 推進器葉片之頂置式攪拌器以3〇〇 RPM攪拌經稀釋 ϊ
Nafion®。向經稀釋Nafion®分散液中快速添加溶於15 mL 水中之1.21 g (5.09 mmol)過硫酸鈉(Na2S208)、及溶於266 pL (9.28 mmol) HC1 及 20 mL水中之 422 pL(4.63 mmol)苯 胺。聚合反應液變得不透明且極黏稠,但在5分鐘内顏色 未發生可見變化。添加約20 mg硫酸鐵,但未出現可見變 133332.doc •40- 200915350 。…:而,在30分鐘後聚合反應液開始變成淡藍色且隨後 复為綠色。在約8小時後,將Dowex M31及D〇wex M43離 子又換樹脂各25 g及1 〇〇 g去離子水添加至聚合反應混合物 中。將混合物攪拌過夜然後用濾紙過濾。將i 〇〇 g去離子 水添加至濾液中以降低黏度。將其分為5等份。 伤保持原樣,不添加鹼。經測定,該份之pH為2,且 含有 2.88。/。(w/w) PAni/Nafion®。自 PAni/Nafion® 製備薄 膜且隨後在13CTC下於空氣中烘烤。薄膜之室溫電導率經 測定為l_2xl0·8 S/cm,其亦展示於表丄中。將一小滴甲苯 置於一片薄膜上,但甲苯自膜快速滾落,此表明非極性有 機溶劑不能潤濕膜表面。非極性溶劑通常用於發光聚合物 及發光小分子。 將0.1 M NaOH水溶液添加至第二份PH 2 PAni/Nafion® 中直至pH為5.0。此份含Na+分散液經測定含有2.89% (w/w) PAni/Nafion®。自 pH 5.0 PAni/Nafi〇n@製備之薄膜 之電導率經測定為3.8 X1 〇·8 s/cm,其亦展示於表1中。經 測§式’曱本不能潤濕PAni/Nafion®薄膜。 實例1 此實例闡述半導體奈米顆粒對增強PAni/Nafion®(聚(四 氟乙烯)/全氟謎磺酸)膜之電導率及可潤濕性之效應。 使用比較實例1中所製備pH 2及pH 5.0 PAni/Nafion®分 散液來闡釋本發明之實施例。向5.0166 g pH 2 PAni/Nafion®分散液中添加 mu g Celnax CX-Z300H-F2®(來自 Nissan Chemical Industries公司,Houston, Texas, 133332.doc 41 200915350 1;8八之亞銻酸鋅水性分散液)。€:^_23〇〇1^_172之^^為約7且 含有26.47% (w/w)亞銻酸辞顆粒,其大小小於2〇 nn^在 調配物中PAni/Nafion®聚合物與亞銻酸鋅之重量比為約 0.47。混合物形成在至少五個月内無顆粒沈澱跡象之穩定 分散液。在水乾燥後,其亦形成平滑透明膜。數據明確表 明,來自Celnax CX-Z300H-F2®之特定亞銻酸錫顆粒與 PAni/ Nafion®相容。然而,為改良粗糙度小於至少5 之 表面平滑度,欲藉由能量密度更高之方法而非簡單地將兩 種組份一起添加來改良該方法。在室溫下,含有 PAni/Nafion®及亞銻酸鋅之分散液之薄膜電導率經測定為 6·6><1(Γ4 S/cm(兩個薄膜樣品之平均值),其亦展示於表i 中。電導率增強四個以上數量級。使一片薄膜與一滴甲苯 接觸。甲苯在膜表面上快速蔓延,此顯示膜變得可由常用 非極性有機溶劑潤濕。 亦向 pH 5.0 PAni/Nafion® 中添加 CX-Z300H-F2以綠定其 對電導率及可潤濕性之效應。向5 〇666 g pH 5.〇 PAni/ Nafion®分散液中添加 υβο g Celnax cx_Z3〇〇H_F2@。在 調配物中PAni/Nafion®聚合物與亞銻酸鋅之重量比為約 0.47。混合物形成無顆粒沈澱跡象之穩定分散液。在水乾 燥後其亦形成平滑透明膜。數據明確表明來自Celnax cX_ Z300H-F2®之特定亞銻酸錫顆粒與PAni/ Nafi〇n⑧相容。然 而,為改良粗链度小於至少5 nm之表面平滑度,欲藉由能 量密度更高之方法而非簡單地將兩種組份一起添加來改良 方法。在室溫下,含有PAni/Nafion®及亞銻酸鋅之分散液 133332.doc -42· 200915350 之薄膜電導率經測定為9 3xl〇·4 S/cm(兩個薄膜樣品之平均 值),其亦展示於表1中。電導率增強四個以上數量級。使 一片薄膜與一滴甲苯接觸。曱苯在膜表面上快速蔓延,此 顯示膜變得可由常用非極性有機溶劑潤濕。 表1 CX-Z300H-F2對電導率之效應 添加CX-Z300H-F2之前分散液之阳及 陽離子 電導率(S/cm) 無 CX-Z300H-F2 含 CX-Z300H-F2 2.0/FT 1.2χ10'8 6.6x10'4 5.0/Na+ 3.8χ1〇·8 9.3 χΙΟ·4 應注意’並非需要闡述於以上概述或實例中之所有活 動,可能不需要某具體活動之某部分;及除上述活動外, 可實施一或多個其他活動。另外,活動所列之次序未必係 其實施次序。 在上述說明書中,已參考具體實施例闡述若干概念。然 而,熟習此項技術者應瞭解,可在不背離下文申請專利範 圍中所闡明本發明範疇之情況下對其實施各種修改及改 I。因此,應認為說明書及附圖具有闡釋性而非限定性意 義,且所有此等修改皆意欲包括於本發明範疇内。 上文已根據具體實施例描述了本發明之益處、其他優點 及問題之解決方案。然而,益處、優點及問題之解決方案 及任何可達成任何益處、優點或解決㈣或使之更突出之 特徵皆不應被理解為係任何或所有巾請專利範圍之關鍵、 必須或基本特徵。 133332.doc -43- 200915350 應瞭解,為清晰起見,本文在單獨實施例之上下文中所 述之某些特徵亦可在單一實施例中以組合方式來提供。相 反,為簡便起見,在單一實施例之上下文中所述之各特徵 亦可單獨或以任何子組合方式來提供。 在本文所指定各範圍内數值之使用應描述為近似值,如 同所述範圍内之最小值及最大值二者皆由詞”約”先行限定 一樣。以此方式,所述範圍可上下稍微改變以達成實質上 與範圍内之值相同的結果。同樣,當一個數值的某些要素 與不同值之彼等要素混合時,該等範圍之揭示内容意欲表 示為包括介於最小平均值與最大平均值之間之每個值在内 且包括可產生的分數值在内之連續範圍。此外,當揭示更 寬或更窄範圍時,在本發明涵蓋範圍内應使來自一範圍之 最小值與來自另一範圍之最大值相匹配,且反之亦然。 【圖式簡單說明】 ^ 本發明係以實例方式來闡釋而非受限於附圖。 圖1係有機電子器件之示意圖。 熟習此項技術者應瞭解,附圖中之卫件係出於簡單明晰 之目的來闡述,而未必按照比例繪製。舉例而言,為有助 於促進理解實施例,附圖中某虺工侔 叫Τ术二丄仟I尺寸可能相對其他 工件有所誇大。 、 【主要元件符號說明】 100 110 典型器件 陽極層 緩衝層 133332.doc -44 - 120 200915350 130 電活性層 140 可選電子注入/傳輸層 150 陰極層
133332.doc -45-
Claims (1)
- 200915350 十、申請專利範圍: 1. 一種組合物,其包含: 至少—種摻雜有至少一種高度氟化的酸聚合物之導電 聚合物之水性分散液,及 無機奈米顆粒。 2. 如凊求項1之組合物,其中該導電聚合物係選自由以下 組成之群:聚噻吩、聚(硒吩)' 聚(碲吩)、聚吡咯、聚 笨胺、多環芳香族聚合物、其共聚物、及其組合。 3. 如請求項2之組合物,其中該導電聚合物係選自由以下 組成之群:聚苯胺、聚噻吩、聚吡咯、聚合稠合多環雜 芳香族化合物、其共聚物、及其組合。 4·如請求項3之組合物,其中該導電聚合物係選自由以下 組成之群:未經取代之聚苯胺、聚(3,4_伸乙基二氧基噻 吩)、未經取代之聚吡咯、聚(噻吩并(2,3_b)噻吩)、聚(噻 呍并(3,2-b)嘆吩)、及聚(α塞吩并(3,4-b)嘆吩)。 5 ·如印求項1之組合物,其中該高度氟化的酸聚合物係至 少95%氟化。 6·如凊求項1之組合物’其中該高度氟化的酸聚合物係選 自磺酸及磺醯亞胺。 7·如請求項1之組合物,其中該高度氟化的酸聚合物係具 有全氟-醚-磺酸側鏈之全氟烯烴。 8.如請求項1之組合物’其中該高度氟化的酸聚合物係選 自由以下組成之群:1,1-二氟乙烯與2·(1,卜二氟_2 〒丞)歸丙氧基)-1,1,2,2-四氟乙磺酸之共聚物、及乙歸與 133332.doc 200915350 ΓΓ;(;,2,2-三氣乙歸氧基广1,1,2,3,3… ,,,四氟乙磺酸之共聚物。 9.如请求項1之組合物,1 Φ古 ,、中該间度氟化的酸聚合物係選 自四氟乙烯與全氟(3 6__ ^ V—乳雜甲基-7-辛烯磺酸)之共 聚物、及四氟乙烯盥全葡 '、氟(3_氧雜·4·戊烯續酸)之共聚 物。 其中該等無機奈米顆粒係半導 10.如請求項!之組合物 體。 11. 如請求項10之組合物 硫化物、金屬氧化物 12. 如請求項11之組合物 組成之群:亞銻酸辞 及其組合。 其中該等奈米顆粒係選自由金屬 及其組合組成之群。 其中該金屬氧化物係選自由以下 缺氧的三氧化鉬、五氧化二釩、 ,其中該等無機奈米顆粒係絕緣 其中該等奈米顆粒係選自由以了 氧化錯、三氧化鉬、氧化釩、氣 13.如請求項1之組合物 體。 14.如請求項13之組合物 組成之群:二氧化鈦 化紹、及其組合。 15· ^求項i之組合物其中奈米顆粒與導電聚合物之 里比係在0.1_10.0範圍内。 16·種自如請求項1之組合物製備之膜。 17·如叫求項16之臈,其在46〇 nm下之折射率大於1 4。 18. -種電子器件,其包含至少一個自如請 製備之層。 《物 I33332.doc 200915350 19. 如請求項18之器件,其中該層係緩衝層。 電活性層、 20. 如請求項19之器件,其包含陽極、缓衝層 及陰極。133332.doc
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| US12421262B2 (en) | 2021-03-15 | 2025-09-23 | Universal Display Corporation | Organic electroluminescent materials and devices |
| US12473317B2 (en) | 2021-06-04 | 2025-11-18 | Universal Display Corporation | Organic electroluminescent materials and devices |
| US12495715B2 (en) | 2021-06-29 | 2025-12-09 | Universal Display Corporation | Organic electroluminescent materials and devices |
| US12414433B2 (en) | 2022-02-11 | 2025-09-09 | Universal Display Corporation | Organic electroluminescent devices |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7317047B2 (en) * | 2002-09-24 | 2008-01-08 | E.I. Du Pont De Nemours And Company | Electrically conducting organic polymer/nanoparticle composites and methods for use thereof |
| US7390438B2 (en) * | 2003-04-22 | 2008-06-24 | E.I. Du Pont De Nemours And Company | Water dispersible substituted polydioxythiophenes made with fluorinated polymeric sulfonic acid colloids |
| US7351358B2 (en) * | 2004-03-17 | 2008-04-01 | E.I. Du Pont De Nemours And Company | Water dispersible polypyrroles made with polymeric acid colloids for electronics applications |
-
2008
- 2008-07-22 KR KR1020107004335A patent/KR20100065302A/ko not_active Withdrawn
- 2008-07-22 WO PCT/US2008/070718 patent/WO2009018009A1/en not_active Ceased
- 2008-07-22 EP EP08796400A patent/EP2173811A1/en not_active Withdrawn
- 2008-07-22 CN CN200880023383A patent/CN101688052A/zh active Pending
- 2008-07-22 JP JP2010518326A patent/JP2010534739A/ja active Pending
- 2008-07-23 TW TW097127994A patent/TW200915350A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010534739A (ja) | 2010-11-11 |
| CN101688052A (zh) | 2010-03-31 |
| EP2173811A1 (en) | 2010-04-14 |
| KR20100065302A (ko) | 2010-06-16 |
| WO2009018009A1 (en) | 2009-02-05 |
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