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TW201005020A - Aqueous dispersions of electrically conducting polymers containing inorganic nanoparticles - Google Patents

Aqueous dispersions of electrically conducting polymers containing inorganic nanoparticles Download PDF

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Publication number
TW201005020A
TW201005020A TW098107745A TW98107745A TW201005020A TW 201005020 A TW201005020 A TW 201005020A TW 098107745 A TW098107745 A TW 098107745A TW 98107745 A TW98107745 A TW 98107745A TW 201005020 A TW201005020 A TW 201005020A
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group
composition
poly
sulfide
layer
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TW098107745A
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Che-Hsiung Hsu
Hong Meng
Hjalti Skulason
Jonathan M Ziebarth
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Du Pont
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Priority claimed from PCT/US2008/070718 external-priority patent/WO2009018009A1/en
Application filed by Du Pont filed Critical Du Pont
Publication of TW201005020A publication Critical patent/TW201005020A/en

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    • C08L27/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/12Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
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    • H01B1/12Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
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    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
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    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H01B1/124Intrinsically conductive polymers
    • H01B1/128Intrinsically conductive polymers comprising six-membered aromatic rings in the main chain, e.g. polyanilines, polyphenylenes
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
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Abstract

The present invention relates to electrically conductive polymer compositions, and their use in electronic devices. The compositions contain an aqueous dispersion of at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer, and inorganic nanoparticles.

Description

201005020 六、發明說明: 【發明所屬之技術領域】 概言之’本發明係關於含有無機奈米顆粒之導電聚合物 組合物及其在電子器件中之應用。 本發明係於2008年7月22曰申請之專利申請案第 12/177,359號之部分接續申請案,其主張優先於2〇〇7年7月 • 27日申請之臨時專利申請案第6〇/952,372號,該兩個專利 皆係全文以引用方式併入本文中。 φ 【先前技術】 電子器件界定一類包括活性層之產品。有機電子器件具 有至少一層有機活性層。該等器件將電能轉化為輻射(例 如發光二極體),經由電子過程檢測信號,將輻射轉化為 電能(例如光伏打電池),或包括一或多層有機半導體層。 有機發光二極體(OLED)係包含能電致發光之有機層的 有機電子器件。含有導電聚合物之〇LED可具有以下組 態: 陽極/緩衝層/EL材料/陰極 以及電極之間之額外層。陽極通常係能夠將電洞注入此材 料中之任一材料,例如銦/錫氧化物(IT〇)。陽極視需要支 ‘撐於玻璃或塑料基板上^ EL材料包括螢光化合物、螢光及 鱗光金屬錯合物、共軛聚合物及其混合物❶陰極通常係能 將電子注入EL材料之任何材料(例如Ca4Ba)。具有在10_3 至1〇-7 S/cm範圍内之低電導率之導電聚合物通常用作與諸 如ITO等導電無機氧化物陽極直接接觸之緩衝層。 業内仍需要經改良緩衝層材料。 【發明内容】 139092.doc 201005020 本發明提供包含至少-種掺雜有至少—種高度氟化的酸 聚合物之導電聚合物之水性分散液的組合物,且其中分散 有無機奈米顆粒。 在另一實施例中提供自上述組合物形成之膜。 在另-實施例中提供包含至少一層包含上述膜之層之電 子器件。 【實施方式】 熟習此項技術者應瞭解,附圖中之工件係出於簡單明晰 之目的來闡述,而未必按照比例繪製。舉例而言為有助 於促進理解實施例,附圖中某些工件之尺寸可能相對其他 工件有所誇大。 ^ 多個態樣及實施例闡述於本文中且僅係例示性而非限制 性。閱讀本說明書後,熟習該項技術者應理解,在不背離 本發明範疇情況下亦可存在其他態樣及實施例。 根據以下實施方式及申請專利範圍可明瞭任何一或多個 實施例之其他特徵及優點。實施方式首先闡述術語之定義 及闡釋,之後闡述導電聚合物、高度氟化的酸聚合物、無 機奈米顆粒、經摻雜導電聚合物組合物之製備、緩衝層、、 電子器件,且最後闡述實例。 1·說明書及申請專利範圍中所用術語之定義及闞釋 在詳細闡述下文所述實施例之前,定義或闡釋某些枚 語。 、一,叮 術語「導體」及其變化形式欲意指具有電子特性之層材 料、部件或結構,以使在電流流經此層材料、部件或結構 時電勢無明顯下降。術語意欲包括半導體。在某些實施例 中’導體可形成電導率為至少l〇_7S/cm之層。 139092.doc 201005020 術語「導電性」在表示材料時意指 。 金屬顆粒之情況下固有地或本質:能導電之::黑或導電 術語「聚合物」欲意指具 —。 ^ ^ 種重複單贈嚴 料。術語包括僅具有—錄七^ |早骽早兀之材 有兩種或更多種不同單體單元 %物 八 單體單元形成之共聚物。 -聚物,包括自不同種類 術語「酸聚合物」係指具有酸性基團之聚合物。201005020 VI. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a conductive polymer composition containing inorganic nanoparticles and its use in an electronic device. The present invention is a part of a continuation application of the patent application No. 12/177,359 filed on July 22, 2008, which claims priority over the provisional patent application filed on July 27, 2007. No. 952,372, both of which are incorporated herein in their entirety by reference. φ [Prior Art] Electronic devices define a class of products that include an active layer. The organic electronic device has at least one organic active layer. The devices convert electrical energy into radiation (e. g., a light-emitting diode), detect the signal via an electronic process, convert the radiation into electrical energy (e.g., photovoltaic cells), or include one or more layers of organic semiconductor. An organic light emitting diode (OLED) is an organic electronic device comprising an organic layer capable of electroluminescence. A germanium LED containing a conductive polymer can have the following configuration: anode/buffer layer/EL material/cathode and an additional layer between the electrodes. The anode is typically capable of injecting holes into any of the materials, such as indium/tin oxide (IT〇). The anode is supported on a glass or plastic substrate as needed. EL materials include fluorescent compounds, fluorescent and scalar metal complexes, conjugated polymers and mixtures thereof. Cathodes are generally any material that can inject electrons into EL materials. (eg Ca4Ba). A conductive polymer having a low electrical conductivity in the range of 10 -3 to 1 Torr-7 S/cm is generally used as a buffer layer in direct contact with a conductive inorganic oxide anode such as ITO. There is still a need for improved buffer layer materials in the industry. SUMMARY OF THE INVENTION 139092.doc 201005020 The present invention provides a composition comprising at least one aqueous dispersion of a conductive polymer doped with at least one highly fluorinated acid polymer, and in which inorganic nanoparticles are dispersed. In another embodiment, a film formed from the above composition is provided. In another embodiment, an electronic device comprising at least one layer comprising the above film is provided. [Embodiment] It should be understood by those skilled in the art that the drawings in the drawings are for the purpose of clarity and clarity and are not necessarily drawn to scale. For example, to facilitate an understanding of the embodiments, the dimensions of certain workpieces in the drawings may be exaggerated relative to other workpieces. The various aspects and embodiments are set forth herein and are merely illustrative and not limiting. After reading this specification, those skilled in the art will understand that other aspects and embodiments may be present without departing from the scope of the invention. Other features and advantages of any one or more of the embodiments will be apparent from the following description and the appended claims. The embodiment first describes the definition and interpretation of the term, and then describes the conductive polymer, highly fluorinated acid polymer, inorganic nanoparticle, preparation of the doped conductive polymer composition, buffer layer, electronic device, and finally elaborated. Example. 1 . Definitions and Interpretation of Terms Used in the Specification and Patent Application Scope Certain terms are defined or explained before the embodiments described below are elaborated. The term "conductor" and variations thereof are intended to mean a layer, component or structure having electronic properties such that the potential does not decrease significantly as current flows through the layer of material, component or structure. The term is intended to include semiconductors. In some embodiments the 'conductor can form a layer having an electrical conductivity of at least 10 Å to 7 S/cm. 139092.doc 201005020 The term "conductivity" means when referring to a material. Intrinsic or essential in the case of metal particles: capable of conducting:: black or conductive The term "polymer" is intended to mean. ^ ^ Kind of repeat single gift strict. The term includes a material having only two or more different monomer units, and eight monomer units. -Polymers, including from various classes The term "acid polymer" refers to a polymer having an acidic group.

術叩㈣基團」係指能離子化以將氫離子供給布忍斯 特(Bronsted)鹼之基團。 術語「高度氟化」係指化合物中至少㈣與碳鍵結之可 用氫經氟替代。 術語「完全氣化」及「 物中所有與碳鍵結之可用 全氟化」可互換使用且係指化合 氫皆經氟替代。 組合物可包含一咬客链ΤΓΊ、兹& 多種不问導電聚合物及一或多種不同 高度氟i化的酸聚合物。 術έ吾「經捧雜」在表f道贵^ & 衣丁導電聚合物時欲意指導電聚合物 具有聚合抗衡離子以平衡導電聚合物上之電荷。 術、Ά雜V電聚合物」欲意指導電聚合物及與其相 連之聚合抗衡離子。 術§吾「層」與術語「媒」可互換使用且係指覆蓋期望區 域之塗層。該術語不受尺寸限制。區域可大至整個器件, 或小至諸如實際視覺顯示器等具體功能區_,或小至單一 子像素。層及膜可係藉由任何習知沈積技術來形成其包 括氣相沈積、液相沈積(連續及不連續技術”及熱轉移。 139092.doc 201005020 術語「奈米顆粒」係指粒度小於1〇〇 nm之材料。在某些 實施例中,粒度小於10 nm。在某些實施例巾,粒度小於5 nm 〇 、術語「水性」係指液體大部分係水,且在_實施例中至 v約40重量%係水;在某些實施例中,至少約⑽重量%係 水。 t術。。電洞傳輸」在表示層、材料、部件或結構時欲意 才曰”亥層、材料、部件或結構有利於正電荷相對有效地以較 小電荷損失穿過該層、材料、部件或結構之厚度遷移。 術”。電子傳輸」在表示層、材料、部件或結構時,意 層材料、。卩件或結構可促進或有利於負電荷穿過該 層材料、部件或結構遷移至另一層、材料、部件或結構 中。 術π有機電子器件」欲意指包括一或多層半導體層或 材料之器件。有機電子器件包括(但不限於):⑴將電能轉 化為輻射之器件(例如發光二極體、發光二極體顯示器、 -極體雷射或發光面板),⑺經由電子過程檢測信號之器 件(例如光檢測器、光導電池、光敏電阻器、光電開關、 光電電晶體、光電管、紅外線(「IR」)檢測器、或生物感 測器)’(3)將輻射轉化為電能之器件(例如光伏打器件或太 陽此電池),及(4)包括一或多個包括一或多層有機半導體 層之電子組件之器件(例如電晶體或二極體)。 本文所用術語r包含」、「包括」、「具有」或其任何 其他變化形式皆意欲涵蓋非排他性包括之内容。舉例而 139092.doc 201005020 言,包含-系列要素之製程、方法、物件或裝置不必僅限 於彼等要素且可包括未明確列出或該等製程、方法、物件 或裝置所时的其他要素。此外,除非明確說明相反情 況’否則「或」係指包含性「或」且不係排他性「或」。 舉例而言’條件可藉由任—以下命題來滿足:A為真 (或存在)且B為假(或不存在)、A為假(或不存在)且B為真 (或存在),及A與B二者皆為真(或存在)。The term "four" group refers to a group capable of ionization to supply hydrogen ions to a Bronsted base. The term "highly fluorinated" means that at least (four) of the compounds and carbon-bonded available hydrogen are replaced by fluorine. The terms "fully gasified" and "all perfluorinated carbon-bondables in the product" are used interchangeably and mean that the hydrogen is replaced by fluorine. The composition may comprise a bite chain, a plurality of electrically conductive polymers and one or more different highly fluorinated acid polymers. In the case of the conductive polymer, it is intended to direct the electropolymer to have a polymeric counterion to balance the charge on the conductive polymer. Technology, noisy V-electropolymer" is intended to guide the electropolymer and its associated polymeric counterion. The term "layer" is used interchangeably with the term "media" and refers to a coating that covers a desired area. This term is not limited by size. The area can be as large as the entire device, or as small as a specific functional area such as an actual visual display, or as small as a single sub-pixel. The layers and films can be formed by any conventional deposition technique including vapor deposition, liquid deposition (continuous and discontinuous techniques) and heat transfer. 139092.doc 201005020 The term "nanoparticles" means a particle size of less than 1〇. Material of 〇 nm. In some embodiments, the particle size is less than 10 nm. In some embodiments, the particle size is less than 5 nm 〇, the term "aqueous" means that the liquid is mostly water, and in the embodiment - to v About 40% by weight of water; in some embodiments, at least about (10)% by weight of water. t.. Hole transport" when expressing layers, materials, components or structures, "deliberation", layer, material, A component or structure facilitates the relatively efficient transfer of a positive charge through the thickness of the layer, material, component or structure with less charge loss. "Electron transfer" when expressing a layer, material, component or structure, the layer material, The element or structure may facilitate or facilitate the migration of negative charges through the layer of material, component or structure into another layer, material, component or structure. π Organic electronic device is intended to include one or more layers of semiconductor or material. Device Organic electronic devices include, but are not limited to, (1) devices that convert electrical energy into radiation (eg, light-emitting diodes, light-emitting diode displays, - polar lasers or light-emitting panels), and (7) devices that detect signals via electronic processes. (eg photodetectors, photoconductive cells, photoresistors, photoswitches, optoelectronic transistors, photocells, infrared ("IR") detectors, or biosensors)' (3) devices that convert radiation into electrical energy (eg a photovoltaic device or a solar cell, and (4) a device (eg, a transistor or a diode) comprising one or more electronic components including one or more layers of an organic semiconductor layer. The term r includes, "includes" as used herein. , "有有", or any other variation thereof, is intended to cover non-exclusive content. For example, 139092.doc 201005020, the processes, methods, objects or devices containing the elements of the series are not necessarily limited to the elements and may include List or other elements of such processes, methods, objects or installations. In addition, unless otherwise stated to the contrary, otherwise "or" means Inclusive "or" and not exclusive "or". For example, 'conditions can be satisfied by any - following proposition: A is true (or exists) and B is false (or non-existent), A is false (or Does not exist) and B is true (or exists), and both A and B are true (or exist).

叫银,使用|-」用於M述本文所述之要素或組件。此 舉僅出於方便之目的及欲給出本發明範_之概括認識。除 非明顯表示其他含義’否則此表述應理解為包括一或至少 一且單數形式亦包括複數形式。 對應於7G素週期表中各攔之族編號使用見於以匸 开⑽办如灸 ,第 81版(2〇〇〇 2〇〇1) 中之「新符號」慣例。 除非另有說明,否則本文所用所有技術及科學術語皆具 有與熟習本發明所屬技術者通常所瞭解含義相同之含義。 在化學式中,字母Q、R、T、W、χ、γ&ζ係用於指示文 中所定義之原子或基團。所有其他字母皆係用於指示習用 原子符號。對應於元素週期表中各攔之族編號使用見於 if⑽办00免 •价少 p办…友,第 81版(2〇〇〇) 中之「新符號」慣例。 對於本文未述及之範圍,已習知諸多關於具體材料、處 理方法及電路之細節且可參見關於有機發光二極體顯示 器、光源、光檢測器、光伏打及半導體部件技術之教科書 139092.doc 201005020 及其他來源。 2·導電聚合物 新殂合物中可使用任一導電聚合物。在某些實施例中, 導電聚合物可形成電導率大於1〇-7 s/cm之膜。 適用於新組合物之導電聚合物係自至少—種在單獨聚合 時形成導電均聚物之單體來製備。在本文中該等單體稱作 導電前體單體」。在單獨聚合時形成不導電均聚物之單 體稱作「不導電前體單體」。導電聚合物可為均聚物或共 聚^適用於新組合物之導電共聚物可自兩種或更多種導 電剛體單體或自一或多種導電前體單 前體單體之組合來製備。 L或夕種非導電 :某些實施例中’導電聚合物係自至少一種選 導電前體單體來製備:售吩…比洛、苯胺、及多 之 化合物。術語「多環芳香族」係指具有 :族 rr環可藉由-或多個鍵來連接,或丄合:環 ^ 「芳香族環」意欲包括雜芳環。「多環雜^ 、」化合物具有至少一個雜芳環。 ”方香 在某些實施例中,導電聚合物係自 前體單體來製備:噻吩、砸吩、碲吩"比略_自以下之 環芳香族化合物。在本文巾自 *胺、及多 聚-吩、聚叫聚(碲吩 夕環芳香族聚合物。術語「多 聚本胺、及 上芳香族環之化合物。環可才、」係指具有—個以 可祠合至-起。術語「芳香:π:個鍵來連接,或其 、」意右人包括雜芳環。广多 139092.doc -8- 201005020 環雜芳香族」化合物具有至少一個雜芳環。在某些實施例 中’多環芳香族聚合物係聚(》塞吩并η塞吩)。 在某些實施例中,新組合物t欲用於形成導電聚合物之 單體包含以下式I :Called silver, using |-" for the elements or components described in this document. This is for convenience only and is intended to provide a general understanding of the invention. This description is to be construed as inclusive, unless otherwise Corresponding to the use of the number of each of the blocks in the 7G prime periodic table, it is found in the "new symbol" convention in the 10th edition of the moxibustion, the 81st edition (2〇〇〇 2〇〇1). Unless otherwise stated, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art. In the chemical formula, the letters Q, R, T, W, χ, γ & ζ are used to indicate the atom or group as defined herein. All other letters are used to indicate the customary atomic symbols. Corresponding to the use of the family number of each block in the periodic table of elements, see if (10) do 00 free • less price p do ... friend, the 81st version (2 〇〇〇) in the "new symbol" convention. For the scope not described herein, many details about specific materials, processing methods, and circuits are known and can be found in textbooks on organic light-emitting diode displays, light sources, photodetectors, photovoltaic devices, and semiconductor component technologies. 201005020 and other sources. 2. Conductive Polymers Any conductive polymer can be used in the new complex. In certain embodiments, the conductive polymer can form a film having a conductivity greater than 1 〇 -7 s/cm. Conductive polymers suitable for use in the novel compositions are prepared from at least one monomer which forms a conductive homopolymer upon polymerization alone. These monomers are referred to herein as conductive precursor monomers. A monomer which forms a non-conductive homopolymer when polymerized alone is referred to as a "non-conductive precursor monomer". The conductive polymer can be a homopolymer or a copolymer. The conductive copolymer suitable for use in the new composition can be prepared from two or more conductive rigid body monomers or from a combination of one or more conductive precursor single precursor monomers. L or eve species are non-conductive: In some embodiments, the 'conductive polymer is prepared from at least one selected electrically conductive precursor monomer: phenoxy, aniline, and more. The term "polycyclic aromatic" means having: a family rr ring may be bonded by - or a plurality of bonds, or a combination: ring ^ "aromatic ring" is intended to include a heteroaryl ring. The "polycyclic hetero compound" compound has at least one heteroaromatic ring. "Fangxiang In some embodiments, the conductive polymer is prepared from a precursor monomer: thiophene, porphin, porphin". The ring-aromatic compound is derived from the following amines. Poly-phenoline, poly-polymerization (anthracene-ring aromatic polymer. The term "polyamine, and the compound of the upper aromatic ring. The ring can be," means that there is one to be able to knead to. The term "aromatic: π: a bond to be joined, or a mixture thereof" includes a heteroaromatic ring. A broad 139092.doc -8-201005020 cycloheteroarene compound has at least one heteroaromatic ring. In certain embodiments Medium polycyclic aromatic polymer poly("septene η phenophene). In certain embodiments, the new composition t is intended to form a conductive polymer monomer comprising Formula I:

其中: Q 係選自由S、Se及Te組成之群; R經·獨立選擇以在每次出現時相同或不同且其係選 自氫、烷基、烯基、烷氧基、烷醯基、烷硫基、 芳氧基、烷基硫烷基、烷基芳基、芳基烷基、胺 基 '院基胺基、一烧基胺基、芳基、烧基亞績酿 基、烧氧基院基、烧基續酿基、芳硫基、芳基亞 石只酿基、烧氧基幾基、芳基項醯基、丙稀酸基、 磷酸基、膦酸基、鹵素、硝基、氰基、羥基、環 氧基、矽烷基、矽氧烷基、醇基、苄基、羧酸醋 基、醚基、醚羧酸酯基、醯胺磺酸酯基、醚項酸 酿基、酯磺酸酯基及胺基曱酸酯基;或兩個R1基 團可一起形成構成3、4、5、6或7-員芳香族環或 環脂族環之伸烧基或伸浠基鏈,其中環視需要可 包括一或多個二價氮、硒、碲、硫或氧原子。 本文所用術語「烷基」係指衍生自脂肪族烴之基團且包 括未經取代或經取代之直鏈、具支鏈及環狀基團。術語 139092.doc -9· 201005020 「雜烧基」欲意指炫基,其中院基内一或多個碳原子已經 另一原子(例如氮、氧、硫、及諸如此類)替代。術語「伸 烷基」係指具有兩個連接點之烷基。 本文所用術語「烯基」係指衍生自脂肪族烴且具有至少 一個碳-碳雙鍵之基團,且包括可未經取代或經取代之直 鏈、具支鏈及環狀基團。術語「雜烯基」欲意指烯基,其 中烯基内一或多個碳原子已經其他原子(例如氮、氧、 硫、及諸如此類)替代。術語「伸烯基」係指具有兩個連 接點之烯基。 本文所用以下取代基之術語係指下文所列之式: 醇基」 -R3-OH 醯胺基」 -R3-C(0)N(R6)R6 醯胺磺酸酯基」 -R3-C(0)N(R6)R4-S03z 苄基」 -ch2-c6h5 羧酸酯基」 -r3-c(o)〇-z 或-r3-〇-c(o)-z 醚」 -R3-(0-R5)p-0-R5 醚羧酸酯基」 -r3-o-r4-c(o)o-z 或-R3-aR4-〇c(o)-z 醚磺酸酯基」 -R3-0-R4-S03Z 酯磺酸酯基」 -R3-O-C(O)-R4-S03Z 磺醯亞胺基」 -R3-S〇2-NH-S〇2-R5 胺基甲酸酯基」 -R3-0-C(0)-N(R6)2 其中所有「R」基團在每次出現時皆可相同或不同且: R3為單鍵或伸烷基 R4為伸烷基 139092.doc 201005020 R5為烷基 R6為氫或烷基 p為〇或介於1至2〇間之整數 ζ為Η、驗金屬、驗土金屬、n(r5)4或r5。 任一上述基團皆可另外未經取代或經取代,且任—基團 中之—或多個氫皆可經F取代,包括全氟化基團。在某些 實施例中,烷基及伸烷基具有丨—20個碳原子。 在某些實施例中,在單體中,兩個Ri一起形成_w_(CYlY2)m_w_ ’其中m係2或3 ’ W係0、S、Se、P〇、nr6,Y1在每次出 現時係相同或不同且為氫或氟,且Υ2在每次出現時相同或 不同且係選自氫、_素、烷基、醇基、醯胺磺酸酯基、苄 基、羧酸酯基、醚基、醚羧酸酯基、醚磺酸酯基、酯磺酸 酯基、及胺基曱酸酯基,其中γ基團可部分或完全氟化。 在某些實施例中,所有Y皆為氫。在某些實施例中,聚合 物為聚(3,4-伸乙基二氧基噻吩)。在某些實施例中,至少 一個Y基團不為風。在某些實施例中,至少一個Y基囷係 至少一個氫經F取代之取代基。在某些實施例中,至少一 個Y基團係全氟化》 在某些實施例中,單體具有式I(a): (C(R7)2),Wherein: Q is selected from the group consisting of S, Se, and Te; R is independently selected to be the same or different at each occurrence and is selected from the group consisting of hydrogen, alkyl, alkenyl, alkoxy, alkanoyl, Alkylthio, aryloxy, alkylsulfanyl, alkylaryl, arylalkyl, amine 'institutional amine group, monoalkylamino group, aryl group, alkyl group, burning oxygen Base, base, arylthio, aryl sulphate, alkoxy, aryl thiol, acrylate, phosphate, phosphonic acid, halogen, nitro , cyano, hydroxy, epoxy, decyl, decyl, alcohol, benzyl, carboxylic acid ketone, ether, ether carboxylate, decyl sulfonate, ether acid And an ester sulfonate group and an amino phthalate group; or two R1 groups may together form a stretching group or a stretching group constituting a 3, 4, 5, 6 or 7-membered aromatic ring or a cycloaliphatic ring. A base chain in which one or more divalent nitrogen, selenium, tellurium, sulfur or oxygen atoms may be included as desired. The term "alkyl" as used herein, refers to a group derived from an aliphatic hydrocarbon and includes unsubstituted or substituted straight chain, branched chain and cyclic groups. Terminology 139092.doc -9· 201005020 "Hybrid" refers to a sleek group in which one or more carbon atoms in a yard has been replaced by another atom (eg, nitrogen, oxygen, sulfur, and the like). The term "alkylene" refers to an alkyl group having two points of attachment. The term "alkenyl" as used herein, refers to a radical derived from an aliphatic hydrocarbon and having at least one carbon-carbon double bond, and includes unsubstituted or substituted linear, branched and cyclic groups. The term "heteroalkenyl" is intended to mean an alkenyl group in which one or more carbon atoms in the alkenyl group have been replaced by other atoms (e.g., nitrogen, oxygen, sulfur, and the like). The term "alkenyl" refers to an alkenyl group having two points of attachment. The term "substituent" as used herein refers to the formula listed below: "Alcohol" -R3-OH guanylamino" -R3-C(0)N(R6)R6 decyl sulfonate" -R3-C ( 0) N(R6)R4-S03z benzyl"-ch2-c6h5 carboxylate" -r3-c(o)〇-z or -r3-〇-c(o)-z ether" -R3-(0 -R5)p-0-R5 ether carboxylate" -r3-o-r4-c(o)oz or -R3-aR4-〇c(o)-z ethersulfonate" -R3-0- R4-S03Z ester sulfonate group" -R3-OC(O)-R4-S03Z sulfonimide group "-R3-S〇2-NH-S〇2-R5 urethane group" -R3- 0-C(0)-N(R6)2 wherein all "R" groups may be the same or different at each occurrence and: R3 is a single bond or an alkyl group R4 is an alkylene group 139092.doc 201005020 R5 is The alkyl group R6 is hydrogen or the alkyl group p is ruthenium or an integer between 1 and 2 ζ is ruthenium, metal, soil test metal, n(r5)4 or r5. Any of the above groups may be additionally unsubstituted or substituted, and any of the - or a plurality of hydrogens may be substituted by F, including perfluorinated groups. In certain embodiments, the alkyl and alkylene groups have from - 20 carbon atoms. In some embodiments, in the monomer, two Ris together form _w_(CYlY2)m_w_ 'where m is 2 or 3' W is 0, S, Se, P〇, nr6, Y1 is present at each occurrence Are the same or different and are hydrogen or fluorine, and Υ2 is the same or different at each occurrence and is selected from the group consisting of hydrogen, _, alkyl, alcohol, sulfonate, benzyl, carboxylate, An ether group, an ether carboxylate group, an ether sulfonate group, an ester sulfonate group, and an amino phthalate group, wherein the γ group may be partially or completely fluorinated. In certain embodiments, all Y are hydrogen. In certain embodiments, the polymer is poly(3,4-extended ethyldioxythiophene). In certain embodiments, at least one Y group is not wind. In certain embodiments, at least one Y-based oxime is a substituent substituted with at least one hydrogen via F. In certain embodiments, at least one Y group is perfluorinated. In certain embodiments, the monomer has the formula I(a): (C(R7)2),

139092.doc -11- 201005020 其中: Q係選自由S、Se及Te組成之群; R7在每次出現時係相同或不同且係選自氩、烧基、雜 烧基、稀基、雜歸基、醇基、醯胺續酸醋基、节 基、叛酸醋基、喊基、㈣酸g旨基、鍵續酸醋基、 酯磺酸酯基及胺基甲酸酯基,其中前提條件係至少 一個R7不為氫,且 m係2或3。 在式1(&)之某些實施例中,m為2,一個R7為具有5個以 上碳原子之烷基,且所有其他R7皆係氫。 在式1(a)之某些實施例中,至少一個r7基團經氣化。在 某些實施例中,至少一個尺7基團具有至少一個氣取代基。 在某些實施例中’ R7基團經完全氟化。 在式1(a)之某些實施例中,單體之稠合環脂族環上之r7 取代基為單體提供在水中之經改良溶解性且有利於在氣化 酸聚合物存在下之聚合。 在式I(a)之某些實施例中,m係2, 一個R7為磺酸·伸丙 土醚亞甲基且所有其他R7皆為氫。在某些實施例中,饥 係2,一個R7係丙基_醚_伸乙基且所有其他R7皆為氫。在某 些實施例中,m係2,一個R7為甲氧基且所有其他r7皆為 氨。在某些實施例中,一似7為績酸二說亞f基醋亞尹基 (-CH2-〇-C(〇)-CF2_S〇3H),且所有其他R7皆為氫。 在某些實施例t,在新組合物中欲用於形成導電聚合物 之吡咯單體包含下式II, i39092.doc 12 (II) 201005020139092.doc -11- 201005020 wherein: Q is selected from the group consisting of S, Se and Te; R7 is the same or different at each occurrence and is selected from the group consisting of argon, alkyl, miscible, dilute, heterogeneous Base, alcohol group, decyl sulfonate, sulfhydryl group, sulfhydryl group, ruthenium group, (iv) acid group, bond acid vine group, ester sulfonate group and urethane group, the premise The condition is that at least one R7 is not hydrogen and m is 2 or 3. In certain embodiments of Formula 1 (&), m is 2, one R7 is an alkyl group having 5 or more carbon atoms, and all other R7 are hydrogen. In certain embodiments of Formula 1 (a), at least one r7 group is vaporized. In certain embodiments, at least one Rule 7 group has at least one gas substituent. In certain embodiments the 'R7 group is fully fluorinated. In certain embodiments of Formula 1 (a), the r7 substituent on the fused cycloaliphatic ring of the monomer provides the monomer with improved solubility in water and is advantageous in the presence of a gasified acid polymer. polymerization. In certain embodiments of Formula I(a), m is 2, one R7 is a sulfonic acid·propionic ether methylene group and all other R7 are hydrogen. In certain embodiments, Hungry 2, one R7 is propyl-ether-extended ethyl and all other R7 are hydrogen. In some embodiments, m is 2, one R7 is methoxy and all other r7 are ammonia. In certain embodiments, one is 7 and the other is R. All of R7 are hydrogen. In certain embodiments t, the pyrrole monomer to be used to form the conductive polymer in the new composition comprises Formula II below, i39092.doc 12 (II) 201005020

其中在式II中: R1係獨立選擇以在每次出現時相同或不同且係選自 氫、烷基、烯基、烷氧基、烷醯基、烷硫基、芳氧 •基、烷基硫烷基、烷基芳基、芳基烷基、胺基、烷 基胺基、二烷基胺基、芳基、貌基亞續醯基、烷氧 基烷基、烷基磺醯基、芳硫基、芳基亞磺醯基、院 氧基羰基、芳基磺醯基、丙烯酸基、填酸基 '膦酸 基、_素、硝基、氰基、羥基、環氧基、矽烷基、 矽氧烷基、醇基、节基、綾酸酯基、醚基、醯胺磺 酸酯基、醚羧酸酯基、醚磺酸酯基、酯磺酸酯基及 胺基甲酸酯基;或兩個R1基團可一起形成構成3、 Ο 4、5、6或7-員芳香族環或環脂族環之伸烷基或伸烯 基鏈’該環視需要可包括—或多個二價氮、硫、 碼、碲或氧原子;且 R級獨立選擇以在每次出現時相同或不同且係選自 氣、烧基、烯基、芳基、烷醯基、烷基硫烷基、烷 基芳基、芳基烷基、胺基、環氧基、矽烷基、矽氧 烷基、醇基、节基基、羧酸酯基、醚基、醚羧酸酯 基、醚磺酸酯基、酯磺酸酯基及胺基甲酸酯基。 139092.doc -13- 201005020 在某些實施例中,R1在每次出現時皆係相同或不同且其 獨立選自氫、烷基、烯基、烷氧基、環烷基、環烯基、醇 基、节基、羧酸酯基、醚基、醯胺磺酸酯基、醚羧酸酯 基、喊續酸酯基、酯磺酸酯基、胺基甲酸酯基、環氧基、 石夕烧基、石夕氧烷基、及經一或多個磺酸、羧酸、丙烯酸、 磷酸、膦酸、齒素、硝基、氰基、羥基、環氧基、矽烷或 矽氧烷部分取代之烷基。Wherein in Formula II: R1 is independently selected to be the same or different at each occurrence and is selected from the group consisting of hydrogen, alkyl, alkenyl, alkoxy, alkyl fluorenyl, alkylthio, aryloxy, alkyl Sulfhydryl, alkylaryl, arylalkyl, amine, alkylamino, dialkylamino, aryl, fluorenyl, alkoxyalkyl, alkylsulfonyl, Arylthio, arylsulfinyl, oxycarbonyl, arylsulfonyl, acryl, acid-phosphonate, nitro, cyano, hydroxy, epoxy, decyl , oxoalkyl, alcohol, benzyl, phthalate, ether, decyl sulfonate, ether carboxylate, ether sulfonate, ester sulfonate and urethane Or two R1 groups may together form an alkyl or alkenyl chain constituting a 3, 4, 5, 6 or 7-membered aromatic or cycloaliphatic ring. The ring may include - or more a divalent nitrogen, sulfur, code, hydrazine or oxygen atom; and the R stages are independently selected to be the same or different at each occurrence and are selected from the group consisting of gas, alkyl, alkenyl, aryl, alkyl sulfonyl, alkyl sulphur Alkyl, alkylaryl, aryl Base, amine group, epoxy group, decyl group, decyloxy group, alcohol group, benzyl group, carboxylate group, ether group, ether carboxylate group, ether sulfonate group, ester sulfonate group and A urethane group. 139092.doc -13- 201005020 In certain embodiments, R1 is the same or different at each occurrence and is independently selected from the group consisting of hydrogen, alkyl, alkenyl, alkoxy, cycloalkyl, cycloalkenyl, Alcohol group, benzyl group, carboxylate group, ether group, decyl sulfonate group, ether carboxylate group, sulfonate group, ester sulfonate group, urethane group, epoxy group, Anthraquinone, anthracycline, and one or more sulfonic acids, carboxylic acids, acrylic acid, phosphoric acid, phosphonic acid, dentate, nitro, cyano, hydroxy, epoxy, decane or decane Partially substituted alkyl.

在某二實施例中’ R係選自氫、烧基及經一或多個續 酸、羧酸、丙烯酸、磷酸、膦酸、齒素、氰基、羥基、環 氧基、矽烷或矽氧烷部分取代之烷基。 在某些實施例中,Π比咯單體未經取代且Rl&R2皆為氯。 在某些實施例中,兩個Rl—起形成6_或7_員環脂族環, 2進一步經選自以下之基團取代:烷基、雜烷基、醇基、 卞基、羧酸酯基、醚基、醚羧酸酯基、醚磺酸酯基、酯磺 酸酯基及胺基甲酸酯基。該等基團可改良單體及所產生聚 合物之溶解性。在某些實施例中,兩個r1—起形成卜或厂In a second embodiment, 'R is selected from the group consisting of hydrogen, alkyl and one or more of a repeating acid, a carboxylic acid, an acrylic acid, a phosphoric acid, a phosphonic acid, a dentate, a cyano group, a hydroxyl group, an epoxy group, a decane or a hydrazine. An alkyl group substituted with an alkane moiety. In certain embodiments, the oxime monomer is unsubstituted and Rl & R2 are both chlorine. In certain embodiments, two R1 together form a 6- or 7-membered cycloaliphatic ring, and 2 is further substituted with a group selected from the group consisting of alkyl, heteroalkyl, alcohol, thiol, carboxylic acid Ester group, ether group, ether carboxylate group, ether sulfonate group, ester sulfonate group and urethane group. These groups improve the solubility of the monomer and the polymer produced. In some embodiments, two r1s are formed into a plant or a plant

員環脂族環,其進一步經烷基取代。在某些實施例中,兩 個R1—起形成6-或7_員環脂族環,其進_步經具有至少!個 碳原子之烷基取代。 在某些貫施例中,兩個 :為2或3 ’且γ在每次出現時皆係相同或不同且係 虱、烷基、醇基、节基、綾酸醋基、醯胺磺酸酯基 基、賴酸醋基、糾酸醋基、醋續酸醋基及胺基甲 基。在某些實施例中,至少一個γ基團不為氣。在某 139092.doc .14- 201005020 施例中至J/ —個Y基團為其中至少一個氯經F取代之取 基。在某些實施例中,至少—個¥基團經全氟化。 在某些實施例中,在新組合物中欲用於形成導電聚合物 之苯胺單體包含下式III, (R1)aThe ring is an aliphatic ring which is further substituted with an alkyl group. In certain embodiments, the two R1s together form a 6- or 7-membered cycloaliphatic ring with at least a step! Substituted by an alkyl group of carbon atoms. In some embodiments, two: 2 or 3 ' and γ are the same or different at each occurrence and are oxime, alkyl, alcohol, benzyl, decanoic acid, decyl sulfonic acid Ester group, lysine group, acidified vinegar group, vinegar acid vinegar group and aminomethyl group. In certain embodiments, at least one gamma group is not gas. In a 139092.doc.14-201005020 example to a J/-Y group is a radical in which at least one chlorine is replaced by F. In certain embodiments, at least one of the ¥ groups is perfluorinated. In certain embodiments, the aniline monomer to be used to form the conductive polymer in the new composition comprises Formula III, (R1)a

(H)b-l 其中: a為0或1至4之整數; b為1至5之整數’其中前提條件係a+b=5 ;且 R1獨立經選擇以在每次出現時相同或不同且係選自氫、烷 基、烯基、烷氧基、烷醯基、烷硫基、芳氧基、烷基硫烷 基、烷基芳基、芳基烷基、胺基、烷基胺基、二烷基胺 基、芳基、烷基亞磺酿基、烷氧基烷基、烷基磺醯基、芳 ❹硫基、芳基亞磺醯基、烷氧基羰基、芳基磺醯基、丙烯酸 基、磷酸基、膦酸基、齒素、硝基、氰基、羥基、環氧 基、碎燒基、矽氧烷基、醇基、苄基、羧酸酯基、醚基、 醚羧酸酯基、醯胺磺酸酯基、醚磺酸酯基、酯磺酸酯基及 胺基甲酸酯基;或兩個R1基團可一起形成構成3、4、5、6 或7-員芳香族環或環脂族環之伸烷基或伸烯基鏈,其令該 環視需要可包括一或多個二價氮、硫或氧原子。 在聚合時’苯胺單體單元可具有以下所示式IV(a)或式 139092.doc -15- 201005020 IV(b)、 或兩式之組合, (R1)a(H) bl where: a is 0 or an integer from 1 to 4; b is an integer from 1 to 5 where the condition is a + b = 5; and R1 is independently selected to be the same or different at each occurrence and Selected from hydrogen, alkyl, alkenyl, alkoxy, alkyl fluorenyl, alkylthio, aryloxy, alkylsulfanyl, alkylaryl, arylalkyl, amine, alkylamino, Dialkylamino, aryl, alkylsulfinyl, alkoxyalkyl, alkylsulfonyl, arylsulfonyl, arylsulfinyl, alkoxycarbonyl, arylsulfonyl , acrylate, phosphate, phosphonic acid, dentate, nitro, cyano, hydroxy, epoxy, alkyl, oxime, alcohol, benzyl, carboxylate, ether, ether Carboxyl ester group, decyl sulfonate group, ether sulfonate group, ester sulfonate group and urethane group; or two R1 groups may be formed together to form 3, 4, 5, 6 or 7 An alkyl or an extended alkenyl chain of an aromatic or cycloaliphatic ring which may include one or more divalent nitrogen, sulfur or oxygen atoms as desired. The aniline monomer unit may have the following formula IV(a) or formula 139092.doc -15-201005020 IV(b), or a combination of two formulas, (R1)a during polymerization.

IV(a)IV(a)

其中a、b及R皆如上所定義。 在某些實施例中,笨胺單體未經取代且a==〇〇 在某些實施例中,a不為〇且至少一個Rl經氣化。在某些 實施例中,至少一個R1經全氟化。 在某些實施例中,在新組合物中欲用於形成導電聚合物 之稠合多環雜芳香族單體具有兩個或更多個稠合芳香族 環’其中至少一個係雜芳香族。在某些實施例中,稠合多 環雜芳香族單體具有式V:Where a, b and R are as defined above. In certain embodiments, the strepamine monomer is unsubstituted and a == 〇〇 In certain embodiments, a is not deuterium and at least one R1 is vaporized. In certain embodiments, at least one R1 is perfluorinated. In certain embodiments, the fused polycyclic heteroaromatic monomer to be used in the formation of a conductive polymer in the novel composition has two or more fused aromatic rings' wherein at least one is heteroaromatic. In certain embodiments, the fused polycyclic heteroaromatic monomer has the formula V:

其中: Q 係 S、Se、Te或NR6 ; 139092.doc 16- 201005020 R6為氫或烷基; R8、R9、R10及R11獨立經選擇以在每次出現時皆係相同 或不同且係選自氫、烧基、稀基、烧氧基、烧酿基、 烧硫基、芳氧基、烧基硫烧基、烧基芳基、芳基烧 基、胺基、烷基胺基、二烷基胺基、芳基、烧基亞績 酿基、烧乳基烧基、烧基績酿基、芳硫基、芳基亞續 醯基、烧氧基幾基、芳基續醯基、丙婦酸基、碟酸 基、膦酸基、i素、硝基、腈基、氰基、羥基、環氧 基、石夕烧基、碎氧烧基、醇基、苄基、竣酸醋基、酿 基、喊叛酸醋基、酿胺續酸s旨基、鍵續酸g旨基、自旨續 酸酯基及胺基甲酸酯基;且 R8與R9、R9與R10、及R10與R11中至少一對一起形成搆成 5或6-員方香族環之伸稀基鍵,該環視需要可包括一 或多個二價氮、硫、硒、碲或氧原子。 在某些實施例中,稠合多環雜芳香族環單體具有選自由 下式組成之群之式:V(a)、V(b)、V(c)、、V⑷、 V(f)、V(g)、V(h)、V(i)、V(j)、及 v(k):Wherein: Q is S, Se, Te or NR6; 139092.doc 16- 201005020 R6 is hydrogen or alkyl; R8, R9, R10 and R11 are independently selected to be the same or different at each occurrence and are selected from Hydrogen, alkyl, dilute, alkoxy, aryl, thiol, aryloxy, alkylthio, aryl, aryl, amine, alkylamine, dioxane Amino group, aryl group, alkyl group, calcined base, calcined base, arylthio group, aryl sulfhydryl group, alkoxy group, aryl group, propyl group Glycolic acid group, dish acid group, phosphonic acid group, i element, nitro group, nitrile group, cyano group, hydroxyl group, epoxy group, sulphur group, oxyalkyl group, alcohol group, benzyl group, decanoic acid group , brewing base, shouting acid vinegar, brewing amine acid s, base acid, purine group and urethane group; and R8 and R9, R9 and R10, and R10 Together with at least one of R11, a dilute base bond constituting a 5 or 6-membered aromatic ring is formed which may optionally include one or more divalent nitrogen, sulfur, selenium, tellurium or oxygen atoms. In certain embodiments, the fused polycyclic heteroaromatic ring monomer has a formula selected from the group consisting of V(a), V(b), V(c), V(4), V(f) , V(g), V(h), V(i), V(j), and v(k):

139092.doc -17- 201005020139092.doc -17- 201005020

其中: Q係 S、Se、Te 或 NH ;且 T在每次出現時係相同或不同且係選自S、NR6、Ο、 SiR62、Se、Te及 PR6 ; Y係N ;且 R6為氫或烷基。 稠合多環雜芳香族單體可另外經選自下列之基團取代: 烷基、雜烷基、醇基、苄基、羧酸酯基、醚基、醚羧酸酯 139092.doc -18· 201005020 基、醚磺酸酯基、酯磺酸酯基及胺基甲酸酯基。在某些實 施例中,取代基係經氟化。在某些實施例中,取代基係經 完全說化。 在某些實施例中’稠合多環雜芳香族單體係噻吩并(噻 .吩)。該等化合物論述於(例如)Macromolecules,34,5746- 5747 (2001)及 Macromolecules,35,7281-7286 (2002)_。 在某些實施例中’噻吩并(噻吩)係選自噻吩并(2,3_b)噻 吩、°塞吩并(3,2-b)°塞吩、及嘆吩并(3,4-b)噻吩。在某些實 ^ 施例中,噻吩并(噻吩)單體另外經至少一個選自下列之基 團取代:烷基、雜烷基、酵基、节基、羧酸醋基、醚基、 醚羧酸酯基、醚磺酸酯基、酯磺酸酯基及胺基甲酸酯基。 在某些實施例中,取代基係經氟化。在某些實施例中,取 代基經完全說化。 在某些實施例中’在新組合物中欲用於形成聚合物之多 環雜芳香族單體包含式VI :Wherein: Q is S, Se, Te or NH; and T is the same or different at each occurrence and is selected from the group consisting of S, NR6, yttrium, SiR62, Se, Te and PR6; Y is N; and R6 is hydrogen or alkyl. The fused polycyclic heteroaromatic monomer may be additionally substituted with a group selected from the group consisting of alkyl, heteroalkyl, alcohol, benzyl, carboxylate, ether, ether carboxylate 139092.doc -18 · 201005020 base, ether sulfonate group, ester sulfonate group and urethane group. In certain embodiments, the substituents are fluorinated. In certain embodiments, the substituents are fully described. In certain embodiments, the "fused polycyclic heteroaromatic mono system thieno (thiophene). Such compounds are discussed, for example, in Macromolecules, 34, 5746-5747 (2001) and Macromolecules, 35, 7281-7286 (2002). In certain embodiments, the 'thieno (thiophene) is selected from the group consisting of thieno (2,3_b) thiophene, ° pheno[3,2-b) thiophene, and sinter (3,4-b) Thiophene. In certain embodiments, the thieno (thiophene) monomer is additionally substituted with at least one group selected from the group consisting of an alkyl group, a heteroalkyl group, a yeast group, a sulfhydryl group, a carboxylic acid aryl group, an ether group, an ether group. A carboxylate group, an ether sulfonate group, an ester sulfonate group, and a urethane group. In certain embodiments, the substituent is fluorinated. In some embodiments, the substitution base is fully described. In certain embodiments, the polycyclic heteroaromatic monomer to be used to form a polymer in a new composition comprises Formula VI:

R12R12

R12 (VI) 其中: Q係 S、Se、Te或 NR6 ; T係選自 S、NR6、Ο、SiR6,、ς; , 2 k、Te及 PR6 ; E係選自伸烯基、伸芳基及伸雜芳美. 139092.doc -19. 201005020 R為氮或炫基; R12每次出現時皆係相同或不同且係選自氫、烷基、 稀基、烧氧基、炫醯基、烧硫基、芳氧基、烧基 硫烷基、烷基芳基、芳基烷基 '胺基、烷基胺 基、二烷基胺基、芳基、烷基亞磺醯基、烷氧基 烷基、烷基磺醯基、芳硫基、芳基亞磺醯基、烷 氧基羰基、芳基績醯基、丙烯酸基、麟酸基、膦 酸基、齒素、确基、腈基、氰基、經基、環氧 基、矽烷基、矽氧烷基、醇基、苄基、羧酸酿 基、醚基、醚羧酸酯基、醯胺磺酸酯基、醚續酸 S旨基、醋,酸醋基及胺基甲酸g旨基;或兩個r12 基團可一起形成構成3、4、5、ό或7員-芳香族環 或環脂族環之伸烷基或伸烯基鏈,其中該環視需 要可包括-或多個二價氮、硫、硒、碲或氧原 子0 在某些實施例中,導電聚合物係前體單體與至少一種第 二單體之共聚物。可使用任_類型之第二單體,只要其對 共聚物之期望特性無有害影響。在笨 、 a隹系些實施例中,以單體 單元之總量計’第二單體佔聚合物 也〇物之50%以下。在某些實 施例中,以單體單元之總量計, 一 乐一早體佔聚合物之3〇〇/0 以下。在某些實施例中,以單體i 早體卓7L之總量計,第二單 佔10%以下。 ^ 千 第一单體之實例性類型包枯γ m ★社 括(但不限於)烯基、炔基、伸 芳基及伸雜芳基。第二單體之眚 早體之實例包括(但不限於)苐…惡 139092.doc •20- 201005020 二β坐、σ塞二唾、 乙炔基、吡咬、 經取代。 苯并噻二唑 伸苯基伸乙烯基、伸苯基伸R12 (VI) wherein: Q is S, Se, Te or NR6; T is selected from the group consisting of S, NR6, yttrium, SiR6, yttrium; 2k, Te and PR6; and E is selected from the group consisting of an alkenyl group and an aryl group. 139092.doc -19. 201005020 R is nitrogen or leuco; R12 is the same or different at each occurrence and is selected from the group consisting of hydrogen, alkyl, dilute, alkoxy, sputum, burn Thio, aryloxy, alkylthioalkyl, alkylaryl, arylalkyl 'amine, alkylamino, dialkylamino, aryl, alkylsulfinyl, alkoxy Alkyl, alkylsulfonyl, arylthio, arylsulfinyl, alkoxycarbonyl, aryl fluorenyl, acryl, linonic, phosphonic, dentate, exact, nitrile , cyano, thiol, epoxy, decyl, decyloxy, alcohol, benzyl, carboxylic acid, ether, ether carboxylate, decyl sulfonate, ether acid S a base, a vinegar, a vinegar group, and a urethane group; or two r12 groups may together form an alkylene group constituting a 3, 4, 5, fluorene or 7-membered-aromatic ring or a cycloaliphatic ring or An alkenyl chain, wherein the ring may include - or a plurality of divalent nitrogen, sulfur, selenium as needed , hydrazine or oxygen atom 0 In certain embodiments, a copolymer of a conductive polymer-based precursor monomer and at least one second monomer. A second monomer of any type may be used as long as it does not adversely affect the desired properties of the copolymer. In some embodiments, the second monomer accounts for less than 50% of the polymer, based on the total of the monomer units. In some embodiments, the amount of monomer units is less than 3 Å/0 of the polymer. In certain embodiments, the second unit accounts for less than 10% based on the total amount of monomer i. ^ 千的第一单的例型包包 γ m ★ includes, but is not limited to, alkenyl, alkynyl, aryl and heteroaryl. Examples of the second monomer include: (but not limited to) 苐 ... evil 139092.doc • 20- 201005020 Two β sitting, σ sedation, ethynyl, pyridine, and substituted. Benzothiadiazole

及三嗪,所有該等基團皆可進一步 在某些貫施例中,# ’,、聚物係藉由首先形成具有結構Α-Β· C之中間體前體單 ^ 來氣以’其中Α及C代表相同或不同之 且5代表第二單體。A-B-C中間體前體單體可 使用標準合成有機技術來製備,例如丫_她、Stille、And triazines, all of which may further be in some embodiments, #', the polymer is formed by first forming an intermediate precursor having the structure Α-Β·C. Α and C represent the same or different and 5 represents the second monomer. A-B-C intermediate precursor monomers can be prepared using standard synthetic organic techniques, such as 丫_She, Stille,

Grenard複刀解反應、Suzuki、及Negishi偶合反應。然後 藉由中門體4體單體單獨或與—或多種額外前體單體之氧 化聚合來形成共聚物。 在某二實施例中,導電聚合物係選自由以下組成之群: 聚°塞吩、聚料、聚合稠合多環雜芳香族化合物、其共聚 物、及其組合。 在某些實施例中,導電聚合物係選自由以下組成之群: 聚(3,4-伸乙基二氧基噻吩)、未經取代之聚吡咯、聚(噻吩 并(2,3-b)噻吩)、聚(噻吩并(3,2_b)噻吩)、及聚(噻吩并 (3,4-b)噻吩)。 3·高度氟化的酸聚合物 高度氟化的酸聚合物(「HFAP」)可為經高度氟化且含有 具有酸性質子之酸性基團之任一聚合物。酸性基團供應可 離子化質子《在某些實施例中,酸性質子具有小於3之 pKa。在某些實施例中,酸性質子具有小於〇之pKa。在某 些實施例中,酸性質子具有小於-5之pKa。酸性基團可與 聚合物主鏈直接連接,或其可與聚合物主鏈上之側鏈連 I39092.doc •21- 201005020 接T性基團之實例包括(但不限於m酸基團、續酸基 團、㈣亞胺基團、璘酸基團、膦酸基團、及其組合。酸 性基團可皆相@,或聚合物可具有—種以上類型之酸性基 團。在某些實施例中’酸性基團係選自由以下組成之群: 磺酸基團、磺醯胺基團、及其組合。 在某些實施例中,HFAP係至少95%氟化;在某些實施例 中’其係完全氟化。 在某些實施例中,舰!>係水溶性。在某些實施例中, HFAP可分散於水中。在某些實施例中,Η·可經有機溶 劑潤濕。術語「有機溶劑可濁濕」係指在形成膜時,材料 與有機溶劑之接觸角不大於6代。在某些實施例中,可@ 濕材料形成可由苯基己炫濁濕之膜,其中接觸角不大於 55、量測接觸角之方法為人所熟知。在某些實施例中: 可润濕材料可藉由聚合酸來製備,該聚合酸自身不可濁濕 但選擇性添加劑可使其變為可潤濕。 〜 適宜聚合物主鏈之實例包括(但不限於)聚烯烴、聚丙烯 酸酯、聚f基丙烯酸酯、聚亞醯胺、聚醯胺、$芳醯胺、 聚丙烯醯胺、聚苯乙烯、及其共聚物,所有該等皆係高度 氟化;在某些實施例中,係完全氟化。 在一實施例中,酸性基圓係磺酸基團或磺醯亞胺基團。 績醯亞胺基團具有下式: -S〇2-NH-S〇2-R 其中R係烷基。 在一實施例中,酸性基團位於氟化側鏈上。在一實施例 139092.doc -22· 201005020 中’氟化侧鏈係選自烷基、烷氧基、醯胺基、醚基、及其 組合,所有該等皆經完全氟化。 在實細*例中,HFAP具有南度氟化稀煙主鍵、及側基 尚度氟化烷基磺酸酯、高度氟化醚磺酸酯、高度氟化酯磺 酸醋、或高度氟化醚磺醯亞胺基團。在一實施例中, HFAP係具有全氟·醚_績酸側鏈之全氟烯烴。在一實施例 中,聚合物係1,1-二氟乙烯與2-0’丨-二氟_2_(三氟曱基)烯 丙氧基)-1,1,2,2-四氟乙續酸之共聚物。在一實施例中,聚 合物為乙烯與2-(2-(1,2,2-三氟乙烯氧基卜丨,^,3,3,3_六氟 丙氧基)-1,1,2,2-四氟乙磺酸之共聚物。可將該等共聚物製 備為對應續醯氟聚合物之後可將其轉化為續酸形式。 在一實施例中,HFAP係經氟化及部分磺化之聚(伸芳基 醚砜)之均聚物或共聚物。共聚物可為嵌段共聚物。 在一實施例中’ HFAP係具有式IX之磺醯亞胺聚合物: S〇2-Rf-S〇2-N ΗGrenard complex knife solution, Suzuki, and Negishi coupling reactions. The copolymer is then formed by oxidative polymerization of the meso-body 4 monomer alone or with - or a plurality of additional precursor monomers. In a second embodiment, the electrically conductive polymer is selected from the group consisting of polyphthyl, polymeric, polymeric fused polycyclic heteroaromatic compounds, copolymers thereof, and combinations thereof. In certain embodiments, the conductive polymer is selected from the group consisting of poly(3,4-extended ethyldioxythiophene), unsubstituted polypyrrole, poly(thieno(2,3-b) Thiophene), poly(thieno(3,2-b)thiophene), and poly(thieno(3,4-b)thiophene). 3. Highly Fluorinated Acid Polymers Highly fluorinated acid polymers ("HFAP") can be any polymer that is highly fluorinated and contains acidic groups having acidic protons. The acidic group supplies ionizable protons. In certain embodiments, the acidic proton has a pKa of less than 3. In certain embodiments, the acidic proton has a pKa less than 〇. In certain embodiments, the acidic proton has a pKa of less than -5. The acidic group may be directly attached to the polymer backbone, or it may be attached to a side chain on the polymer backbone. I39092.doc • 21- 201005020 Examples of T-groups include (but are not limited to, m-acid groups, continued An acid group, a (iv) imine group, a decanoic acid group, a phosphonic acid group, and combinations thereof. The acidic group may be in the same phase @, or the polymer may have more than one type of acidic group. In some implementations In the example, the 'acid group' is selected from the group consisting of: a sulfonic acid group, a sulfonamide group, and combinations thereof. In certain embodiments, the HFAP is at least 95% fluorinated; in certain embodiments 'It is fully fluorinated. In some embodiments, ship!> is water soluble. In certain embodiments, HFAP can be dispersed in water. In certain embodiments, Η· can be wetted by an organic solvent The term "organic solvent turbidity wet" means that the contact angle of the material with the organic solvent is not more than 6 generations when the film is formed. In some embodiments, the wettable material can form a film which can be wetted by phenylhexidone. A method in which the contact angle is not greater than 55 and the contact angle is measured is well known. In some embodiments: a wettable material The material can be prepared by polymerizing an acid which is not wettable by itself but which can be made wettable by selective additives. ~ Examples of suitable polymer backbones include, but are not limited to, polyolefins, polyacrylates, Polyf-based acrylates, polyimines, polyamines, linalylamines, polyacrylamides, polystyrenes, and copolymers thereof, all of which are highly fluorinated; in certain embodiments, In one embodiment, the acid-based sulfonic acid group or the sulfonimide group has the following formula: -S〇2-NH-S〇2-R R is an alkyl group. In one embodiment, the acidic group is located on the fluorinated side chain. In an embodiment 139092.doc -22· 201005020 the 'fluorinated side chain is selected from the group consisting of alkyl, alkoxy, decylamine Bases, ether groups, and combinations thereof, all of which are fully fluorinated. In the case of real fines, HFAP has a southern fluorinated dilute primary bond, and a pendant fluorinated alkyl sulfonate, highly fluorinated. An ether sulfonate, a highly fluorinated ester sulfonic acid vinegar, or a highly fluorinated ether sulfonimide group. In one embodiment, the HFAP system has a perfluoro-ether-acid side Perfluoroolefin. In one embodiment, the polymer is vinylidene fluoride and 2-0'-difluoro-2-(trifluoromethyl) allyloxy)-1,1,2, a copolymer of 2-tetrafluoroethyl acid. In one embodiment, the polymer is ethylene and 2-(2-(1,2,2-trifluoroethyleneoxydip, ^, 3,3,3-hexafluoropropoxy)-1,1, a copolymer of 2,2-tetrafluoroethanesulfonic acid which can be converted to a hydrogenated form after preparation of the corresponding fluoropolymer. In one embodiment, the HFAP is fluorinated and partially a homopolymer or copolymer of a sulfonated poly(aryl ether sulfone). The copolymer may be a block copolymer. In one embodiment 'HFAP is a sulfonimide polymer of formula IX: S〇2 -Rf-S〇2-N Η

其中:among them:

Rf係選自兩度氟化伸烧基、高度說化雜伸烧基、高度 敗化伸芳基、及高度氟化伸雜芳基,其可經一或多 個醚氧取代;且 η至少為4。 139092.doc -23- 201005020 在式IX之一實施例中,Rf係全氟烷基。在一實施例中,Rf 係全氟丁基。在一實施例中,Rf含有醚氧。在一實施例 中,η大於10。 在一實施例中,HFAP包含高度氟化聚合物主鏈及具有 式X之側鏈: -OR15-S02-NH-(S〇2-N-S〇2-N)a-S02R16 (X) Η Η 其中: R15係高度氟化伸烷基或高度氟化雜伸烷基; R16係高度氟化烷基或高度氟化芳基;且 a為0或1至4之整數。 在一實施例中,HFAP具有式XI : (CF2-CF2)c-(CF2-CF> π (XI) Ο」 I 16 (CF2-CF-0)c-(CF2)c-S02-N-(S02-(CF2)c-S02-N)c-S02R16 Η Η R16 其中: R16係高度氟化烷基或高度氟化芳基; c獨立地為0或自1至3之整數;且 η至少為4。 HFAP之合成闡述於(例如)以下文獻中:A. Feiring等 A 5 J. Fluorine Chemistry 2000, 105, 129-135 ; A. Feiring 139092.doc -24- 201005020 等人,Macromolecules 2000, 33,9262-9271 ; D. D.Rf is selected from the group consisting of a two-degree fluorinated alkyl group, a highly heterozygous alkyl group, a highly derivatized aryl group, and a highly fluorinated heteroaryl group, which may be substituted with one or more ether oxygens; and η is at least Is 4. 139092.doc -23- 201005020 In one embodiment of Formula IX, Rf is a perfluoroalkyl group. In one embodiment, Rf is perfluorobutyl. In one embodiment, Rf contains ether oxygen. In an embodiment, η is greater than 10. In one embodiment, the HFAP comprises a highly fluorinated polymer backbone and a side chain having the formula X: -OR15-S02-NH-(S〇2-NS〇2-N)a-S02R16 (X) Η Η R15 is a highly fluorinated alkyl or highly fluorinated alkyl; R16 is a highly fluorinated alkyl or highly fluorinated aryl; and a is 0 or an integer from 1 to 4. In one embodiment, the HFAP has the formula XI: (CF2-CF2)c-(CF2-CF> π(XI) Ο" I 16 (CF2-CF-0)c-(CF2)c-S02-N-( S02-(CF2)c-S02-N)c-S02R16 Η Η R16 wherein: R16 is a highly fluorinated alkyl group or a highly fluorinated aryl group; c is independently 0 or an integer from 1 to 3; and η is at least 4. The synthesis of HFAP is described, for example, in A. Feiring et al. A 5 J. Fluorine Chemistry 2000, 105, 129-135; A. Feiring 139092.doc -24- 201005020 et al., Macromolecules 2000, 33, 9262-9271 ; DD

Desmarteau, J. Fluorine Chem. 1995,72, 203-208 ; A. J. Appleby 等人,J. Electrochem. Soc. 1993,140(1),109-111 ;及 Desmarteau,美國專利第 5,463,005 號。 在一實施例中,HFAP亦包含衍生自至少一種高度氟化 烯系不飽和化合物之重複單元。全氟烯烴包含2至20個碳 原子。代表性全氟烯烴包括(但不限於)四氟乙烯、六氟丙 烯、全氟-(2,2-二曱基-1,3-二氧雜環戊烯)、全氟-(2-亞甲 基-4-甲基-1,3-二氧戊環)、CF2=CFO(CF2)tCF=CF2(其中 t係 1或2)、及Rf"OCF=CF2(其中RfM係具有1至約10個碳原子之 飽和全氟烷基)。在一實施例中,共單體係四氟乙烯。 在一實施例中,HFAP係膠體形成聚合酸。本文所用術 語「膠體形成」係指不溶於水且在分散於水性介質中時形 成膠體之材料。膠體形成聚合酸通常具有介於約1〇,〇〇〇至 約4,000,000之間之分子量。在一實施例中,聚合酸具有約 φ 100,000至約2,000,000之分子量。膠體粒度通常為2奈米 (nm)至約140奈米。在一實施例中,膠體之粒度為2 nm至 約30 nm。可使用任何具有酸性質子之高度氟化膠體形成 聚合材料。可以非酸形式形成上文所述某些聚合物,例如 鹽、酯、或磺醯氟。如下文所述,可將其轉化為酸形弍以 供製備導電組合物。 在某些實施例中,HFAP包括高度氟化碳主鏈及表示為 下式之側鏈 139092.doc •25· 201005020 -(0-CF2CFRf3)a-0-CF2CFRf4S03E5 其中Rf3及Rf4獨立地選自F、Cl或具有1至10個碳原子之高 度氟化烷基,a=0 ' 1或2,及E5。在某些情況下E5可為諸 如Li、Na、或K等陽離子,且可將其轉化為酸形式。 在某些實施例中,HFAP可為揭示於美國專利第 3,282,875號及美國專利第4,358,545號及第4,940,525號中 之聚合物。在某些實施例中,HFAP包含全氟碳主鏈及表 示為下式之側鏈 -o-cf2cf(cf3)-o-cf2cf2so3e5 其中E5係如上文所定義。此類HFAP揭示於美國專利第 3,282,875號中且可藉由以下方式來製備:四氟乙烯(TFE) 與全氟化乙烯基醚 cf2=cf-o-cf2cf(cf3)-o-cf2cf2so2f (即全氟(3,6-二氧雜-4-曱基-7-辛烯磺醯氟)(?〇]^0?))共聚 合,且隨後藉由磺醯氟基團之水解使其轉化為磺酸根基 團,且視需要實施離子交換以將其轉換為期望離子形式。 美國專利第4,358,545號及第4,940,525號中所揭示類型聚合 物之實例具有侧鏈-〇-CF2CF2S03E5,其中E5係如上文所定 義。此聚合物可藉由以下方式來製備:使四氟乙烯(TFE) 與全氟化乙烯基醚CF2 = CF-0-CF2CF2S02F(即全氟(3-氧雜-4-戊烯磺醯氟)(POPF)共聚合,隨後實施水解且視需要實 施進一步離子交換。 一類HFAP可以水性Nafion®分散液自E. I. du Pont de Nemours and Company (Wilmington, DE)購得。 4. 無機奈米顆粒 139092.doc -26- 201005020 無機奈米顆粒可為絕緣體或半導體。 在某些實施例中無機奈米顆粒為金屬硫化物或金屬氧化 物。 半導體金屬氧化物之實例包括(但不限於)混合價金屬氧 化物(例如銻酸鋅)、及非化學計量金屬氧化物(例如缺氧的 二氧化鉬、五氧化釩、及諸如此類)。銻酸鋅Zn〇/Sb2〇5係 以商品名「Celnax」及各種比率自Nissan chemical公司購 得(例如參見美國專利第5,7〇7,552號)。 ❹ 絕緣金屬氧化物之實例包括(但不限於)氧化矽、氧化 鈦、氧化鍅、三氧化鉬、氧化釩、氧化鋁、氧化鋅、氧化 釤、氧化釔、氧化鉋、氧化銅、氧化錫、氧化銻、及諸如 此類。 金屬硫化物之實例包括硫化鎘、硫化銅、硫化鉛、硫化 汞、硫化銦、硫化銀、硫化鈷、硫化鎳、及硫化鉬。可使 用混合金屬硫化物,例如Ni/Cd硫化物、C〇/Cd硫化物、 Cd/In硫化物、及Pd_c〇_pd硫化物。 在某些實施例中,金屬奈米顆粒可含有硫及氧。在某些 實施例中,使用金屬奈米顆粒之組合。 金屬氧化物奈米顆粒可藉由以下方式來製備:在氧存在 下對金屬實施反應濺射,蒸發所選擇氧化物及多組份氧化 物;或對諸如四氣化矽等無機化合物實施氣相水解。其亦 可藉由溶膠-凝膠化學使用可水解金屬氧化物、尤其各種 凡素之烷氧化物來製造,以使其藉由水解及縮聚反應而形 成多組份及多維網絡氧化物。 金屬硫化物奈米顆粒可藉由各種化學及物理方法來獲 得物理方法之某些實例係諸如硫化鑛(CdS)、硫化錯 139092.doc -27· 201005020 (PbS)、硫化辞(ZnS)、硫化銀(Agj)、硫化鉬(M〇S2)等金 屬硫化物之氣相沈積、光刻製程及分子束外延數 備金屬硫化物奈米顆粒之化學方法係基於溶液中之金屬離 子與水性介質中之H2S氣體或Na2Si反應。 在某些實施例中’奈米顆粒之表面經偶合劑處理以使其 與水性導電聚合物相容。表面改性劑之種類包括(但不限 於)矽烷、鈦酸鹽、鍅酸鹽、鋁酸鹽及聚合分散剤。表面 改性劑含有化學官能團’其實例包括(但不限於)腈、胺 基、氰基、烷基胺基、烷基、芳基、烯基、烷氧基、芳氧 基、磺酸、丙烯酸、磷酸、及上述酸之鹼金屬鹽、丙烯酸 酯基、磺酸酯基、醢胺磺酸酯基、醚基、醚磺酸酯基、酯 磺酸酯基、烷硫基、及芳硫基。在一實施例中,化學官能 團可包括諸如環氧基、烷基乙烯基及芳基乙烯基等交聯劑 以在相鄰上層上與奈米複合物或電洞傳輸材料中之導電聚 合物反應。在一實施例中,表面改性劑經氟化或全氟化, 例如四氟-乙基三氟_乙烯基_醚三乙氧基矽烷、全氟丁烷_ -乙氧基矽烷、全氟辛基三乙氧基矽烷、雙(三氟丙基)四❹ 甲基二甲石夕基胺、及雙(3_三乙氧基甲石夕炫基)丙基四硫化 物。 5.經摻雜導電聚合物組合物之製備 在以下論述中’導電聚合物、HFAp、及無機奈米顆粒 皆係指單數形式。然而應理解’可使用一種以上之任一或 所有該等物質。 新導電聚合物組合物係藉由首先形成經摻雜導電聚合物 139092.doc -28- 201005020 然後添加無機奈米顆粒來製備。 經摻雜導電聚合物係藉由在HFAP存在下於水性介質中 使前體單體發生氧化聚合來形成。聚合反應已闡述於經公 開美國專利申請案第2004/0102577號、第2〇〇4/〇127637號 及第2005/205860號中。 可將無機奈米顆粒直接以固體形式添加至經摻雜導電聚 合物分散液中。在某些實施例中,使無機奈米顆粒分散於 水溶液中,且使此分散液與經摻雜導電聚合物分散液混 ® 合。奈米顆粒與導電聚合物之重量比在0.1至10.0範圍内。 在某些實施例令,在添加無機顆粒之前或之後升高pH。 在約2之已形成pH至中性pH範圍内,經掺雜導電聚合物與 無機奈米顆粒之分散液保持穩定。在添加奈米顆粒之前, 可藉由用陽離子交換樹脂處理來調節pH。在某些實施例 中,藉由添加鹼性水溶液來調節ρΗβ鹼之陽離子可為(但 不限於)鹼金屬、鹼土金屬、銨、及烷基銨。在某些實施 _ 例中’驗金屬陽離子較鹼土金屬陽離子為佳。 在下文中自本文所述新導電組合物製備之膜稱為「本文 所述新膑」。可使用液體沈積技術來製備膜,包括連續及 不連續技術。連續沈積技術包括(但不限於)旋塗、凹板塗 佈、幕塗、浸塗、槽模塗佈、喷塗、及連續喷嘴塗佈。不 連續沈積技術包括(但不限於)噴墨印刷、凹版印刷、及絲 網印刷。 由此形成之膜平滑且相對透明,折射率大於14(在46〇 ηπι波長下),且電導率可在1〇-7至1〇-33/咖範圍内。 139092.doc •29- 201005020 6. 緩衝層 在本發明另-實施例中提供自包含新導電聚合物組合物 之水性分散液沈積之緩衝層。術語「緩衝層」或「緩衝材 料」欲意指有機電子器件中可具有一或多種功能之導電或 半導電材料,其功能包括(但不限於)平面化底層、電荷傳 輸及/或電荷注入特性、清除諸如氧或金屬離子等雜質、 及有利於或可改良有機電子器件性能之其他態樣。術語 「層」與術語「膜」可互換使用且係指覆蓋期望區域之塗 層。该術語不受尺寸限制。區域可大至整個器件,或小至 諸如實際視覺顯示器等具體功能區域,或小至單一子像 素。層及膜可係藉由任何習知沈積技術來形成,其包括氣 相沈積、液相沈積(連續及不連續技術)、及熱轉移。連續 沈積技術包括(但不限於)旋塗、凹板塗佈、幕塗、浸塗、 槽模塗佈喷塗、及連續噴嘴塗佈。不連續沈積技術包括 (但不限於)喷墨印刷、凹版印刷、及絲網印刷。 新導電聚合物組合物之經乾燥膜一般不能再分散於水 中。因此可以多層薄層形式使用緩衝層。此外,緩衝層可 經不同水溶性或水分散性材料層塗覆而不受損。 令人驚訝地,已發現包含新導電聚合物組合物之緩衝層 具有經改良可潤濕性。在某些實施例中,自新導電聚合物 組合物製備之膜表現與有機溶劑之小於5 〇。之接觸角。在 某些實施例中,膜可經對二甲笨以小於50。之接觸角潤 139092.doc 30· 201005020 濕,在某些實施例中,該接觸角小於4〇。;在某些實施例 中,小於30。。Desmarteau, J. Fluorine Chem. 1995, 72, 203-208; A. J. Appleby et al., J. Electrochem. Soc. 1993, 140(1), 109-111; and Desmarteau, U.S. Patent No. 5,463,005. In one embodiment, the HFAP also comprises repeating units derived from at least one highly fluorinated ethylenically unsaturated compound. Perfluoroolefins contain from 2 to 20 carbon atoms. Representative perfluoroolefins include, but are not limited to, tetrafluoroethylene, hexafluoropropylene, perfluoro-(2,2-dimercapto-1,3-dioxole), perfluoro-(2-Asia Methyl-4-methyl-1,3-dioxolane), CF2=CFO(CF2)tCF=CF2 (where t is 1 or 2), and Rf"OCF=CF2 (wherein the RfM system has from 1 to about A saturated perfluoroalkyl group of 10 carbon atoms). In one embodiment, the system is a single system of tetrafluoroethylene. In one embodiment, the HFAP colloid forms a polymeric acid. As used herein, the term "colloidal formation" means a material that is insoluble in water and forms a colloid when dispersed in an aqueous medium. The colloid-forming polymeric acid typically has a molecular weight of between about 1 Torr and about 4,000,000. In one embodiment, the polymeric acid has a molecular weight of from about φ 100,000 to about 2,000,000. The colloidal particle size is usually from 2 nanometers (nm) to about 140 nm. In one embodiment, the colloid has a particle size of from 2 nm to about 30 nm. Any highly fluorinated colloid having an acidic proton can be used to form the polymeric material. Certain polymers described above may be formed in a non-acid form, such as a salt, an ester, or a sulfonium fluoride. It can be converted to an acid shape as described below for the preparation of a conductive composition. In certain embodiments, the HFAP comprises a highly fluorinated carbon backbone and a side chain designated as 139092.doc • 25· 201005020 -(0-CF2CFRf3)a-0-CF2CFRf4S03E5 wherein Rf3 and Rf4 are independently selected from F , Cl or a highly fluorinated alkyl group having from 1 to 10 carbon atoms, a = 0 '1 or 2, and E5. In some cases, E5 may be a cation such as Li, Na, or K, and may be converted to an acid form. In certain embodiments, the HFAP can be a polymer disclosed in U.S. Patent No. 3,282,875 and U.S. Patent Nos. 4,358,545 and 4,940,525. In certain embodiments, the HFAP comprises a perfluorocarbon backbone and a side chain of the formula -o-cf2cf(cf3)-o-cf2cf2so3e5 wherein E5 is as defined above. Such HFAPs are disclosed in U.S. Patent No. 3,282,875 and may be prepared by the following methods: tetrafluoroethylene (TFE) and perfluorinated vinyl ether cf2 = cf-o-cf2cf (cf3)-o-cf2cf2so2f (ie full Fluorine (3,6-dioxa-4-indolyl-7-octenesulfonylfluorene) (??)^0?)) is copolymerized and then converted to a solvent by hydrolysis of a sulfonium fluoride group The sulfonate group is ion exchanged as needed to convert it to the desired ionic form. An example of a polymer of the type disclosed in U.S. Patent Nos. 4,358,545 and 4,940,525 has a side chain - 〇-CF2CF2S03E5, wherein E5 is as defined above. This polymer can be prepared by subjecting tetrafluoroethylene (TFE) to perfluorinated vinyl ether CF2 = CF-0-CF2CF2S02F (ie, perfluoro(3-oxa-4-pentenesulfonate) (POPF) copolymerization followed by hydrolysis and further ion exchange as needed. One type of HFAP is available as an aqueous Nafion® dispersion from EI du Pont de Nemours and Company (Wilmington, DE). 4. Inorganic Nanoparticles 139092.doc -26- 201005020 The inorganic nanoparticle may be an insulator or a semiconductor. In certain embodiments, the inorganic nanoparticle is a metal sulfide or a metal oxide. Examples of the semiconductor metal oxide include, but are not limited to, a mixed valence metal oxide. (eg zinc citrate), and non-stoichiometric metal oxides (eg, oxygen-deficient molybdenum dioxide, vanadium pentoxide, and the like). Zinc citrate Zn〇/Sb2〇5 is sold under the trade name “Celnax” and various ratios. It is commercially available from Nissan Chemical Co., Ltd. (see, for example, U.S. Patent No. 5,7,7,552). Examples of insulating metal oxides include, but are not limited to, cerium oxide, titanium oxide, cerium oxide, molybdenum trioxide, vanadium oxide, oxygen. Aluminum, zinc oxide, antimony oxide, antimony oxide, antimony oxide, copper oxide, tin oxide, antimony oxide, and the like. Examples of metal sulfides include cadmium sulfide, copper sulfide, lead sulfide, mercury sulfide, indium sulfide, silver sulfide. , cobalt sulfide, nickel sulfide, and molybdenum sulfide. Mixed metal sulfides such as Ni/Cd sulfide, C〇/Cd sulfide, Cd/In sulfide, and Pd_c〇_pd sulfide may be used. In one embodiment, the metal nanoparticle may contain sulfur and oxygen. In certain embodiments, a combination of metal nanoparticles is used. The metal oxide nanoparticle can be prepared by reacting a metal in the presence of oxygen. Sputtering, evaporating selected oxides and multi-component oxides; or performing vapor phase hydrolysis on inorganic compounds such as tetragas hydride. It can also be used to hydrolyze metal oxides by sol-gel chemistry, especially Alkoxides are manufactured to form multicomponent and multidimensional network oxides by hydrolysis and polycondensation. Metal sulfide nanoparticles can be obtained by various chemical and physical methods. Some examples are gas sulfides such as sulfide ore (CdS), sulphurization 139092.doc -27· 201005020 (PbS), sulphide (ZnS), silver sulfide (Agj), and molybdenum sulfide (M〇S2). Phase deposition, lithography process, and molecular beam epitaxy The chemical process for preparing metal sulfide nanoparticles is based on the reaction of metal ions in solution with H2S gas or Na2Si in an aqueous medium. In certain embodiments, 'nanoparticles The surface is treated with a coupling agent to make it compatible with the aqueous conductive polymer. Types of surface modifiers include, but are not limited to, decane, titanate, citrate, aluminate, and polymeric dispersion oximes. Surface modifiers contain chemical functional groups' examples of which include, but are not limited to, nitriles, amine groups, cyano groups, alkyl amine groups, alkyl groups, aryl groups, alkenyl groups, alkoxy groups, aryloxy groups, sulfonic acids, acrylic acid , phosphoric acid, and alkali metal salts, acrylate groups, sulfonate groups, decyl sulfonate groups, ether groups, ether sulfonate groups, ester sulfonate groups, alkylthio groups, and arylthio groups of the above acids . In one embodiment, the chemical functional group may include a crosslinking agent such as an epoxy group, an alkyl vinyl group, and an aryl vinyl group to react with the conductive polymer in the nanocomposite or the hole transporting material on the adjacent upper layer. . In one embodiment, the surface modifier is fluorinated or perfluorinated, such as tetrafluoro-ethyltrifluoro-vinyl-ether triethoxydecane, perfluorobutane-ethoxylated decane, perfluoro Octyltriethoxydecane, bis(trifluoropropyl)tetramethylglyoxime, and bis(3-triethoxymethylglycosyl)propyltetrasulfide. 5. Preparation of doped conductive polymer composition In the following discussion, 'conductive polymer, HFAp, and inorganic nanoparticle are used in the singular form. However, it should be understood that any or all of these materials may be used. The new conductive polymer composition is prepared by first forming a doped conductive polymer 139092.doc -28-201005020 and then adding inorganic nanoparticles. The doped conductive polymer is formed by oxidative polymerization of a precursor monomer in an aqueous medium in the presence of HFAP. The polymerization is described in U.S. Patent Application No. 2004/0102577, No. 2/4, 127, 637, and No. 2005/205,860. The inorganic nanoparticles can be added directly to the doped conductive polymer dispersion as a solid. In certain embodiments, the inorganic nanoparticles are dispersed in an aqueous solution and the dispersion is mixed with the doped conductive polymer dispersion. The weight ratio of the nanoparticle to the conductive polymer is in the range of 0.1 to 10.0. In certain embodiments, the pH is raised before or after the addition of the inorganic particles. The dispersion of the doped conductive polymer and the inorganic nanoparticle remains stable at a pH ranging from about 2 to a neutral pH. The pH can be adjusted by treatment with a cation exchange resin prior to the addition of the nanoparticles. In certain embodiments, the cation of the ρΗβ base can be adjusted by adding an aqueous alkaline solution to be, but not limited to, an alkali metal, an alkaline earth metal, an ammonium, and an alkyl ammonium. In some embodiments, the metal cation is preferred to the alkaline earth metal cation. Films prepared from the novel conductive compositions described herein are referred to as "new mash as described herein." Films can be prepared using liquid deposition techniques, including continuous and discontinuous techniques. Continuous deposition techniques include, but are not limited to, spin coating, gravure coating, curtain coating, dip coating, slot die coating, spray coating, and continuous nozzle coating. Discontinuous deposition techniques include, but are not limited to, ink jet printing, gravure printing, and screen printing. The film thus formed is smooth and relatively transparent, has a refractive index greater than 14 (at a wavelength of 46 〇 ηπι), and has an electrical conductivity in the range of from 1 〇 -7 to 1 〇 - 33 Å. 139092.doc • 29- 201005020 6. Buffer Layer A buffer layer deposited from an aqueous dispersion comprising a novel conductive polymer composition is provided in another embodiment of the present invention. The term "buffer layer" or "buffer material" is intended to mean a conductive or semiconductive material that may have one or more functions in an organic electronic device, including but not limited to planarization underlayer, charge transport and/or charge injection characteristics. Removing impurities such as oxygen or metal ions, and other aspects that may or may improve the performance of the organic electronic device. The term "layer" is used interchangeably with the term "film" and refers to a coating that covers a desired area. This term is not limited by size. The area can be as large as the entire device, or as small as a specific functional area such as an actual visual display, or as small as a single sub-pixel. The layers and films can be formed by any conventional deposition technique including gas phase deposition, liquid phase deposition (continuous and discontinuous techniques), and heat transfer. Continuous deposition techniques include, but are not limited to, spin coating, gravure coating, curtain coating, dip coating, slot die coating, and continuous nozzle coating. Discontinuous deposition techniques include, but are not limited to, ink jet printing, gravure printing, and screen printing. The dried film of the new conductive polymer composition is generally not redispersible in water. It is therefore possible to use a buffer layer in the form of a plurality of thin layers. In addition, the buffer layer can be coated with a different layer of water soluble or water dispersible material without damage. Surprisingly, it has been found that buffer layers comprising new conductive polymer compositions have improved wettability. In certain embodiments, the film prepared from the new conductive polymer composition exhibits less than 5 Å of organic solvent. Contact angle. In certain embodiments, the film may be less than 50 via dimethyl benzene. The contact angle is 139092.doc 30· 201005020 Wet, in some embodiments, the contact angle is less than 4 〇. In some embodiments, less than 30. .

在另-實施例中提供自包含摻合有其他水溶性或水分散 性材料之料電聚合物Μ合物之水性分散液沈積之緩衝 層。可添加材料類型之實例包括(但不限於)聚合物、毕 料、塗佈助劑、有機及無機導電墨水及糊劑、電荷傳輪材 料、交聯劑、及其組合。其他水溶性或水分散性材料可為 簡單分子或聚合物。適宜聚合物之實例包括(但不限於)導 電聚合物,例如聚噻吩、聚苯胺、聚吡咯、聚乙炔、聚 (°塞吩并噻吩)、及其組合。 7· 電子器件 在本發明另-實施例中提供包含至少一層位於兩電接觸 H之電活性層之電子器件’丨中該器件另外包括新緩 衝層。術言吾「電活性」在表示層或材料時欲意指表現電子 或電轄射特性之層或材料。在接收輻射時,電活性層材 料可發射輻射或表現電子_電洞對之濃度變化。 圖1所示,典型器件1〇〇具有陽極層丨1〇,緩衝層12〇, 電Α性層130、及陰極層15〇。與陰極層15()相鄰者為可選 電子注入/傳輸層14〇。 盗件可包括可毗鄰於陽極層11〇或陰極層15〇之支撐件或 (未示、出)。在大多數情況下,支撐件毗鄰陽極層110。 件可為撓性的或剛性的、有機的或無機的。支撐件材 歹J包括(但不限於)玻璃、陶瓷、金屬及塑料膜。 極層110為與陰極層15〇相比可更有效注入電洞之電 139〇92,doc •31· 201005020 極。陽極可包括含有金屬、混合金屬、合金、金屬氧化物 或混合氧化物之材料。適宜材料包括第2族元素(即Be、 Mg、Ca、Sr、Ba、Ra)、第11族元素、第4、5及6族元素 及第8-10族過渡元素之混合氧化物。若陽極層11〇可透 光,則可使用第12、13及14族元素之混合氧化物,例如 銦-錫氧化物。本文所用短語「混合氧化物」係指具有選 自第2族元素或第12、13或14族元素之兩種或更多種不同 陽離子之氧化物。陽極層110材料之某些非限制性具體實 例包括(但不限於)銦-錫_氧化物(Γ IT〇」)、銦-辞-氧化 物、鋁-錫-氧化物、金、銀、銅及鎳。陽極亦可包含有機 材料,尤其諸如聚苯胺等導電聚合物,包括如「Flexible light-emitting diodes made from s〇iuble c〇nducting p〇lymer」,In another embodiment, a buffer layer is provided for the deposition of an aqueous dispersion comprising an electropolymer conjugate of a material incorporating other water soluble or water dispersible materials. Examples of types of materials that may be added include, but are not limited to, polymers, materials, coating aids, organic and inorganic conductive inks and pastes, charge transfer materials, crosslinkers, and combinations thereof. Other water soluble or water dispersible materials can be simple molecules or polymers. Examples of suitable polymers include, but are not limited to, conductive polymers such as polythiophenes, polyanilines, polypyrroles, polyacetylenes, poly(°enophenethiophenes), and combinations thereof. 7. Electronic Devices In another embodiment of the present invention, an electronic device comprising at least one electrically active layer located between two electrical contacts H is provided, the device additionally comprising a new buffer layer. "Electrical activity" when referring to a layer or material is intended to mean a layer or material that exhibits electronic or electro-optical properties. When receiving radiation, the electroactive layer material can emit radiation or exhibit a change in concentration of electron-hole pairs. As shown in FIG. 1, a typical device 1 has an anode layer, a buffer layer 12, an electroconductive layer 130, and a cathode layer 15A. Adjacent to cathode layer 15 () is an optional electron injection/transport layer 14". The thief may include a support or (not shown) that may be adjacent to the anode layer 11 or the cathode layer 15A. In most cases, the support is adjacent to the anode layer 110. The pieces can be flexible or rigid, organic or inorganic. Support members 歹J include, but are not limited to, glass, ceramic, metal, and plastic films. The pole layer 110 is a 139 〇 92, doc • 31· 201005020 pole which is more efficiently injected into the cavity than the cathode layer 15 。. The anode may comprise a material comprising a metal, a mixed metal, an alloy, a metal oxide or a mixed oxide. Suitable materials include mixed oxides of Group 2 elements (i.e., Be, Mg, Ca, Sr, Ba, Ra), Group 11 elements, Group 4, 5 and 6 elements, and Group 8-10 transition elements. If the anode layer 11 is permeable to light, a mixed oxide of elements of Groups 12, 13 and 14 such as indium-tin oxide can be used. The phrase "mixed oxide" as used herein refers to an oxide having two or more different cations selected from Group 2 elements or Group 12, 13 or 14 elements. Some non-limiting specific examples of the anode layer 110 material include, but are not limited to, indium-tin oxide (ΓIT〇), indium-de-oxide, aluminum-tin-oxide, gold, silver, copper. And nickel. The anode may also comprise an organic material, especially a conductive polymer such as polyaniline, including, for example, "Flexible light-emitting diodes made from s〇iuble c〇nducting p〇lymer".

Nature’第357卷,第477_479頁〇992年6月u日)中所述之 例示性材料。陽極及陰極中至少一個應至少部分透明以容 許觀測所產生光。 陽極層110可藉由化學或物理氣相沈積製程或旋轉澆注 製程來形成。化學氣相沈積可以經電漿加強之化學氣相沈 積(「PECVD」)或金屬有機化學氣相沈積(「M〇CVD」)實 施。物理氣相沈積可包括所有形式之濺射,包括離子束濺 射以及電子束蒸發及電阻蒸發。物理氣相沈積之具體形式 包括rf磁控管濺射及電感耦合電漿物理氣相沈積(「iMp_ PVD」)。該等沈積技術在半導體製造業中已為吾人所熟 知0 在一實施例中,在微影作業期間陽極層i 1〇經圖案化。 139092.doc •32- 201005020 圊案可根據需要而改變。在施用第一電接觸層材料之前可 藉由(例如)將圖案化遮罩或光阻劑置於第一撓性複合障壁 結構上來形成圖案化層。或者’亦可以整體層形式(亦稱 為毯覆沈積)施用層,並隨後使用(例如)經圖案化光阻層及 濕化學或幹蝕刻技術來實施圖案化。亦可使用業内熟知之 其他圖案化製程。 緩衝層120包含本文所述新導電組合物。自摻雜有HFAp 之導電聚合物製備之緩衝層一般不能由有機溶劑潤濕且折 ® 射率低於K4(在46〇 波長下)。本文所述緩衝層可潤濕性 更強且由此更易於經來自非極性有機溶劑之下一層塗佈。 本文所述緩衝層之折射率亦可大於^4(在46〇 nmT)。通常 使用熟習此項技術者熟知之各種技術將緩衝層沈積於基板 上。上文所述典型沈積技術包括氣相沈積、液相沈積(連 續及不連續技術)、及熱轉移。 未顯示可選層可存於緩衝層12〇與電活性層ι3〇之間。此 ❿ 層可包含電洞傳輸材料。電洞傳輸材料之實例由Y. Wang 概述於(例如)Kirk-Othmer Encyclopedia 〇f Chemical Technology(第 4版,第 18 卷,第 837-860 頁,1996)中。可 使用電洞傳輸分子及聚合物二者。常用電洞傳輸分子包括 (但不限於):4,4',4"-三(N,N-二苯基-胺基)_三苯基胺 (TDATA) ; 4,4',4',-三(N-3-甲基苯基-N-苯基-胺基)-三笨基 胺(MTDATA) ; N,N,-二苯基-N,N,-雙(3-甲基苯基)-[1,1,_聯 苯基]_4,4'-二胺(TPD) ; 1,1-雙[(二_4_甲苯基胺基)苯基]環 己烷(TAPC) ; N,N,-雙(4-甲基苯基)-N,N'-雙(4-乙基苯基)- 139092.doc -33· 201005020 [1,1'-(3,3’_ 二曱基)聯苯基]-4,4,-二胺(ETPD);四-(3 -甲基 苯基)->1,>},>4’,:^-2,5-伸苯基二胺0〇八);〇1-苯基-4->^-二 苯基胺基苯乙烯(TPS);對-(二乙基胺基)苯甲醛二苯基腙 (DEH);三苯胺(TPA);雙[4·(ν,Ν-二乙基胺基)-2_曱基苯 基](4-甲基苯基)曱烷(MPMP) ; 1-苯基·3_[對_(二乙基胺基) 苯乙稀基]-5-[對-(二乙基胺基)苯基]吼唆琳(ppR或 DEASP) ; 1,2-反-雙(9Η-咔唑 _9_ 基)環丁烷(DCZB); Ν,Ν,Ν’,Ν’-四(4-甲基苯基)-(ι,ι,_ 聯苯基)_4,4,_ 二胺(ΤΤΒ); Ν,Ν'-雙(萘-1-基)-Ν,Ν'-雙-(苯基)聯笨胺(α_ΝρΒ);及卟琳 類化合物,例如銅酞菁。常用電洞傳輸聚合物包括(但不 限於)聚乙烯基咔唑、(苯基甲基)聚矽烷、聚(二氧基嗟 吩)、聚苯胺及聚吡咯。亦可藉由將電洞傳輸分子(例如上 述之彼等)掺雜至諸如聚苯乙稀及聚碳酸酯等聚合物中來 獲得電洞傳輸聚合物。 端視器件之應用’電活性層130可係藉由施加電麼來激 發之發光層(例如在發光二極體或發光電化學電池中),或 係響應輻射能且在施加或不施加偏壓之情況下產生信號之 材料層(例如在光檢測器中)。在一實施例中,電活性材料 係有機電致發光(「EL」)材料。任何el材料皆可用於器件 中’其包括(但不限於)小分子有機螢光化合物、螢光及碟 光金屬錯合物、共軛聚合物、及其混合物。螢光化合物之 實例包括(但不限於)嵌二萘、茈、紅螢烯、香豆素、其衍 生物、及其混合物。金屬錯合物之實例包括(但不限於)金 屬鉗合之類噁辛(oxinoid)化合物,例如,三(8_經基喧琳根 139092.doc -34- 201005020 基)鋁(Alq3);環金屬化銥及鉑電致發光化合物,例如銥與 苯基°比咬、苯基喧琳、或苯基嘴咬配體之錯合物(如Petrov 等人,美國專利第6,670,645號及公開之PCT申請案WO 03/063555及WO 20〇4/016710中所揭示者)及有機金屬錯合 物(例如公開之PCT申請案WO 03/008424、WO 03/091688 及WO 03/040257中所述者);及其混合物。Thompson等人 在美國專利第6,303,238號中及Burrows與Thompson在公開 PCT申請案WO 00/70655及WO 01/41512中已闡述包含帶電 © 主體材料及金屬錯合物之電致發光發射層。共軛聚合物之 實例包括(但不限於)聚(伸苯基伸乙烯基)、聚苐、聚(螺二 第)、聚噻吩、聚(對-伸苯基)、其共聚物、及其混合物。 可選層140可用於促進電子注入/傳輸兩種作用,且亦可 用作封閉層以防止反應在層界面中止。更具體而言,層 140可促進電子遷移且在層13 0與150原本可直接接觸之情 況下降低反應中止之可能性。可選層140材料之實例包括 _ (但不限於)金屬鉗合之類噁辛化合物,例如雙(2_曱基冬喹 琳根基)(對-苯基-酚根基)鋁(III) (BA1Q)及三(8-羥基喹啉根 基0#(Alq3);四(8羥基喹啉根基)锆;唑類化合物,例如 2-(4-聯笨基)5 (4_第三丁基苯基噁二唑(Pbd)、3_ (4_聯笨基)-4-苯基-5-(4-第三丁基苯基)-1,2,4-三唑(TAZ)、 及^3,5、三(笨基-2-苯并咪唑)苯(TPBI);喹噁啉衍生物, 例如2,3、雙(4-氟苯基)喹噁啉;菲咯啉衍生物,例如9,10-一苯基菲咯啉(DPA)及2,9-二曱基-4,7-二苯基-1,10-菲咯啉 (DDPA);及其任何一或多種組合。或者,可選層14〇可係 139092.doc -35- 201005020 無機的且包含BaO、LiF、Li20或諸如此類。 陰極層150係可尤其有效地注入電子或負電荷載流子之 電極。陰極層150可為功函數低於第一電接觸層(在此狀況 下指陽極層110)之任何金屬或非金屬。本文所用術語「較 低功函數」欲意指材料之功函數不大於約4 4 eV。本文所 用術語「較高功函數」欲意指材料之功函數為至少約44 eV。 陰極層之材料可係選自第1族鹼金屬(例如Li、Na、κ、 Rb、Cs)、第2族金屬(例如Mg、Ca、、或諸如此類)、 第12族金屬、彌系元素(例如Ce、Sm、Eu、或諸如此類)、 及奶系7L素(例如Th、U、或諸如此類)。亦可使用諸如 鋁銦、紀等材料及其組合。陰極層150之材料之非限制 性具體實例包括(但不限於):鎖、鐘、飾絶、銷、麵、 釔、鎂、釤、及其合金及組合。 陰極層15〇通常係藉由化學或物理氣相沈積製程來形 ❹ 、在某些實她例中,陰極層可經圖案化,如 極層110所述。 夂爹”、、防 考慮到欲由該等居接视+丄 ^寺層棱供之功能,器件中之其他層可由已 用於該等層之任何材料來製備。 在某些實施例中,封梦 _ 上以 裝層(未不出)係沈積於接觸層150 份二 障壁層或膜。在一實施二θ 4 一貫施例中,封裝層係 儘管未繪-中,封裝層係破璃蓋。 不旦應瞭解器件100可包含額外層。或者可 139092.doc -36 - 201005020 使用業内習知之其他層。此外,任一上述層可包含兩層或 更多層子層或可形成叠層結構。或者,陽極層11〇、電祠 傳輸層120、電子傳輸層14〇、陰極層】5〇、及其他層令之 某些或全部可經處理(具體而言經表面處理)以提高器件之 t何載流子傳輸效率或其他物理特性。較佳藉由平衡下述 目標來4定各組件層材料之選擇:結合料工作壽命因素 提供具有兩器件效率之器件、製造時間及複雜性因素及其 他已為熟習此項技術者所瞭解之因素。應瞭解最佳組件、 ® ㈣组態及組成性質應由彼等f通熟f該項技術者例行確 定。 在一實施例中,不同層具有下列厚度範圍:陽極u〇, 500-5000 A,在一實施例中為1〇〇〇·2〇〇() A ;緩衝層12〇, 50-2000 A,在一實施例中為2〇〇_1〇〇〇 A ;光活性層13〇, 10-2000 a,在一實施例中為100_1000 A ;可選電子傳輸層 140,50-2000 A,在一實施例中為 100·1000 A ;陰極 15〇, ❿ 200-10000 A,在一實施例中為3〇〇 5〇〇〇 A。每一層之相對 厚度可影響電子-電洞重組區域在器件中之位置,且由此 影響器件之發射光譜。因此電子傳輸層之厚度應經選擇以 使電子-電洞重組區域位於發光層中。期望層厚度比可取 決於所用材料之確切性質。 在作業中’對器件100施加來自適宜電源(未繪示)之電 麗°因此電流穿過器件100中之各層。電子進入有機聚合 物層’從而釋放光子。在某些〇LED(稱作主動矩陣OLED 顯不器)中,可藉由電流經過獨立地激發各光活性有機膜 139092.doc •37· 201005020 之沈積,此產生各個發光像素。在某些〇LED(稱作被動矩 陣OLED顯示器)中,可藉由多列及多行電接觸層來激發光 活性有機膜之沈積。 儘管在本發明之實踐或測試中可使用與彼等本文所述者 類似或等效之方法及材料,但下文仍對適宜方法及材料加 以闡述。本文所提及之所有出版物、專利申請案、專利、 及其他參考文獻之全部内容皆係以引用方式倂入本文中。 倘若出現矛盾’則以本說明書(包括定義)為准。此外,材 料、方法及實例僅係例示性而非意欲限制本發明。 應瞭解,為清楚起見,在分開實施例上下文中所述之本 發明某些特徵亦可在單一實施例中組合提供。相反,為簡 潔起見,於單-實施例上下文中所述之本發明各特徵亦可 矢開提供或以子組合方式提供。此外,以範圍形式提及數 值時’其包括此範圍内之每一及各個數值。 實例Exemplary materials described in Nature's Vol. 357, pp. 477_479, June 992, 992. At least one of the anode and the cathode should be at least partially transparent to allow observation of the generated light. The anode layer 110 can be formed by a chemical or physical vapor deposition process or a spin casting process. Chemical vapor deposition can be carried out by plasma enhanced chemical vapor deposition ("PECVD") or metal organic chemical vapor deposition ("M〇CVD"). Physical vapor deposition can include all forms of sputtering, including ion beam sputtering as well as electron beam evaporation and resistance evaporation. Specific forms of physical vapor deposition include rf magnetron sputtering and inductively coupled plasma physical vapor deposition ("iMp_PVD"). Such deposition techniques are well known in the semiconductor manufacturing industry. In one embodiment, the anode layer i1 is patterned during lithography operations. 139092.doc •32- 201005020 The file can be changed as needed. The patterned layer can be formed by, for example, placing a patterned mask or photoresist on the first flexible composite barrier structure prior to applying the first electrical contact layer material. Alternatively, the layer can also be applied in a monolithic form (also known as blanket deposition) and subsequently patterned using, for example, a patterned photoresist layer and wet chemical or dry etching techniques. Other patterning processes well known in the art can also be used. Buffer layer 120 comprises the novel conductive composition described herein. The buffer layer prepared from a conductive polymer doped with HFAp is generally not wettable by an organic solvent and has a refractive index lower than K4 (at a wavelength of 46 Å). The buffer layer described herein is more wettable and thus more readily coated by a layer from a non-polar organic solvent. The refractive index of the buffer layer described herein may also be greater than ^4 (at 46 〇 nmT). The buffer layer is typically deposited onto the substrate using a variety of techniques well known to those skilled in the art. Typical deposition techniques described above include vapor deposition, liquid deposition (continuous and discontinuous techniques), and thermal transfer. The optional layer is not shown to be present between the buffer layer 12A and the electroactive layer ι3. This layer of germanium may contain hole transport material. Examples of hole transport materials are outlined by Y. Wang in, for example, Kirk-Othmer Encyclopedia 〇f Chemical Technology (4th Edition, Vol. 18, pp. 837-860, 1996). Holes can be used to transport both molecules and polymers. Common hole transport molecules include, but are not limited to: 4,4',4"-tris(N,N-diphenyl-amino)-triphenylamine (TDATA); 4,4',4', -Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine (MTDATA); N,N,-diphenyl-N,N,-bis(3-methylbenzene Base)-[1,1,_biphenyl]_4,4'-diamine (TPD); 1,1-bis[(di-4-methylphenylamino)phenyl]cyclohexane (TAPC); N,N,-bis(4-methylphenyl)-N,N'-bis(4-ethylphenyl)- 139092.doc -33· 201005020 [1,1'-(3,3'_ 2 Mercapto)biphenyl]-4,4,-diamine (ETPD); tetra-(3-methylphenyl)->1,>},>4',:^-2,5- Phenyldiamine 0〇8);〇1-phenyl-4->^-diphenylaminostyrene (TPS); p-(diethylamino)benzaldehyde diphenylhydrazine (DEH) Triphenylamine (TPA); bis[4·(ν,Ν-diethylamino)-2-hydrylphenyl](4-methylphenyl)decane (MPMP); 1-phenyl· 3_[p-(diethylamino)phenethyl]-5-[p-(diethylamino)phenyl]indole (ppR or DEASP); 1,2-trans-double (9Η -carbazole _9_yl)cyclobutane (DCZB); Ν,Ν,Ν',Ν'-four (4-methylphenyl)-(ι,ι,_biphenyl)_4,4,-diamine (ΤΤΒ); Ν,Ν'-bis(naphthalen-1-yl)-Ν,Ν'-double - (phenyl) phenylamine (α_ΝρΒ); and phthalocyanine compounds such as copper phthalocyanine. Common hole transport polymers include, but are not limited to, polyvinyl carbazole, (phenylmethyl) polydecane, poly(dioxy porphin), polyaniline, and polypyrrole. The hole transporting polymer can also be obtained by doping a hole transporting molecule (e.g., the above) into a polymer such as polystyrene and polycarbonate. Application of the end-view device 'Electroactive layer 130 can be an emissive layer that is excited by application of electricity (for example in a light-emitting diode or a light-emitting electrochemical cell), or in response to radiant energy with or without biasing The layer of material that produces the signal (eg, in a photodetector). In one embodiment, the electroactive material is an organic electroluminescent ("EL") material. Any of the el materials can be used in devices including, but not limited to, small molecule organic fluorescent compounds, fluorescent and disc metal complexes, conjugated polymers, and mixtures thereof. Examples of fluorescent compounds include, but are not limited to, inlaid naphthalene, anthracene, erythroprene, coumarin, derivatives thereof, and mixtures thereof. Examples of metal complexes include, but are not limited to, metal-clamped oxinoid compounds such as, for example, tris(8_by carbaryl- 139092.doc-34-201005020 ke)aluminum (Alq3); Metallated ruthenium and platinum electroluminescent compounds, such as ruthenium and phenyl phthalate, phenyl phthalocyanine, or phenyl occluded ligand complexes (eg, Petrov et al, US Patent No. 6,670,645 and published PCT) And the organic metal complexes as described in the PCT application WO 03/008424, WO 03/091688 and WO 03/040257, the disclosures of which are incorporated herein by reference. ; and mixtures thereof. An electroluminescent emissive layer comprising a charged © host material and a metal complex has been described in U.S. Patent No. 6,303,238, the disclosure of which is incorporated herein by reference. Examples of conjugated polymers include, but are not limited to, poly(phenylene vinyl), polyfluorene, poly(spirobi), polythiophene, poly(p-phenylene), copolymers thereof, and mixtures thereof . The optional layer 140 can be used to promote both electron injection/transportation and can also be used as a sealing layer to prevent the reaction from ending at the layer interface. More specifically, layer 140 promotes electron migration and reduces the likelihood of reaction discontinuation where layers 130 and 150 are otherwise in direct contact. Examples of optional layer 140 materials include, but are not limited to, metal-clamped, etc., such as bis(2-fluorenyl quinquirin) (p-phenyl-phenolate) aluminum (III) (BA1Q) And tris(8-hydroxyquinolinyl group 0# (Alq3); tetrakis(8-hydroxyquinolinyl)zirconium; azole compounds, such as 2-(4-diphenyl)5 (4_t-butylphenyl) Oxadiazole (Pbd), 3_(4_ phenyl)-4-phenyl-5-(4-t-butylphenyl)-1,2,4-triazole (TAZ), and ^3, 5. Tris(phenyl-2-benzimidazole)benzene (TPBI); quinoxaline derivatives such as 2,3, bis(4-fluorophenyl)quinoxaline; phenanthroline derivatives, for example 9, 10-monophenylphenanthroline (DPA) and 2,9-dimercapto-4,7-diphenyl-1,10-phenanthroline (DDPA); and any one or more combinations thereof. The layer 14 can be 139092.doc -35- 201005020 inorganic and contains BaO, LiF, Li20 or the like. The cathode layer 150 is particularly effective for injecting electrons or negative charge carriers. The cathode layer 150 can be a work function. Any metal or non-metal that is lower than the first electrical contact layer (in this case, the anode layer 110). The term "compare" is used herein. "Work function" means that the work function of the material is not more than about 4 4 eV. The term "higher work function" as used herein means that the work function of the material is at least about 44 eV. The material of the cathode layer may be selected from the first group. An alkali metal (eg, Li, Na, κ, Rb, Cs), a Group 2 metal (eg, Mg, Ca, or the like), a Group 12 metal, a systemic element (eg, Ce, Sm, Eu, or the like), And the milk system 7L (such as Th, U, or the like). Materials such as aluminum indium, kiln, and the like may also be used. Non-limiting specific examples of the material of the cathode layer 150 include (but are not limited to): lock, clock , enamel, pin, face, tantalum, magnesium, niobium, alloys and combinations thereof. Cathode layer 15〇 is usually formed by chemical or physical vapor deposition process. In some cases, the cathode layer can be Patterned, as described in pole layer 110. 夂爹",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Materials are prepared. In some embodiments, the seal is deposited on the layer (not shown). The contact layer is 150 parts of the second barrier layer or film. In a consistent embodiment of the application of the two θ 4 , the encapsulation layer is not painted, and the encapsulation layer is a glass cover. It should be understood that the device 100 may include additional layers. 139092.doc -36 - 201005020 Other layers known in the art are used. Further, any of the above layers may comprise two or more sub-layers or may form a laminate structure. Alternatively, the anode layer 11 and the electro-transport layer 120 Some or all of the electron transport layer 14 阴极, cathode layer 5 〇, and other layers may be processed (particularly surface treated) to increase the carrier transport efficiency or other physical properties of the device. Preferably, the choice of material for each component layer is determined by balancing the following objectives: the binder working life factor provides a device with two device efficiencies, manufacturing time and complexity factors, and other factors well known to those skilled in the art. . It should be understood that the best components, ® (4) configuration and compositional properties should be routinely determined by those skilled in the art. In one embodiment, the different layers have the following thickness ranges: anode u〇, 500-5000 A, in one embodiment 1〇〇〇·2〇〇() A; buffer layer 12〇, 50-2000 A, In one embodiment is 2〇〇_1〇〇〇A; photoactive layer 13〇, 10-2000 a, in one embodiment 100_1000 A; optional electron transport layer 140, 50-2000 A, in one In the examples, it is 100·1000 A; the cathode is 15 〇, ❿ 200-10000 A, and in one embodiment is 3〇〇5〇〇〇A. The relative thickness of each layer can affect the position of the electron-hole recombination region in the device and thereby affect the emission spectrum of the device. Therefore, the thickness of the electron transport layer should be selected such that the electron-hole recombination region is located in the light-emitting layer. The desired layer thickness ratio may depend on the exact nature of the materials used. In operation, device 100 is applied with a suitable power source (not shown) so that current passes through the layers in device 100. Electrons enter the organic polymer layer' to release photons. In some 〇LEDs (referred to as active matrix OLED displays), the deposition of each photoactive organic film 139092.doc • 37· 201005020 can be independently excited by a current, which produces individual luminescent pixels. In some germanium LEDs (referred to as passive matrix OLED displays), the deposition of the photoactive organic film can be excited by multiple columns and multiple rows of electrical contact layers. Although methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention, suitable methods and materials are set forth below. All publications, patent applications, patents, and other references mentioned herein are hereby incorporated by reference. In the event of a conflict, the specification (including definitions) will prevail. In addition, the materials, methods, and examples are illustrative only and are not intended to limit the invention. It will be appreciated that, for clarity, certain features of the invention described in the context of separate embodiments may also be provided in combination in a single embodiment. Rather, the various features of the invention described in the context of the singular embodiments may be provided or provided in a sub-combination. In addition, when a numerical value is referred to in a range, it includes each and every value in the range. Instance

比較實例A 此比較實例闡釋未添加無機奈米顆粒之pAni/Nafi〇⑽ (聚(四氟乙烯)/全氟醚績酸)膜之低電導率及不可潤濕性。 此實例中所用PAni/Nafion®分散液係使用EW(酸當量)為 1000之水性Nafion®膠體性分散液來製備。2S% (w/w)之 Nafion®分散液係使用與美國專利第6,丨5〇,426號中實例夏之 部分2之程序類似之程序來製備,但溫度為約27〇它且之後 經水稀釋而形成12.0% (w/w)分散液以供聚合。 在500 mL反應釜中加入96.4 g 12%固體含量之Nafi〇n@ 139092.doc •38- 201005020 分散液(11.57 mmol S03H基團)、103 g水。使用具有雙級 推進器葉片之頂置式攪拌器以300 RPM攪拌經稀釋 Nafion®。向經稀釋Nafion®分散液中快速添加溶於15 mL 水中之1.21 g (5.09 mmol)過硫酸納(Na2S208)、及溶於266 μι (9.28 mmol) HC1 及 20 mL水中之 422 pL(4.63 mmol)苯 胺。聚合反應液變得不透明且極黏稠,但在5分鐘内顏色 未發生可見變化。添加約20 mg硫酸鐵,但未出現可見變 化。然而,在30分鐘後聚合反應液開始變成淡藍色且隨後 © 變為綠色。在約8小時後,將Dowex M3 1及Dowex M43離 子交換樹脂各25 g及100 g去離子水添加至聚合反應混合物 中。將混合物攪拌過夜然後用濾紙過濾。將100 g去離子 水添加至濾液中以降低黏度。將其分為5等份。 一份保持原樣,不添加鹼。經測定,該份之pH為2,且 含有 2.88% (w/w) PAni/Nafion®。自 PAni/Nafion® 製備薄 膜且隨後在130°C下於空氣中烘烤。薄膜之室溫電導率經 測定為1·2χ1(Γ8 S/cm,其亦展示於表1中。將一小滴f苯 ® 置於一片薄膜上,但甲苯自膜快速滾落,此表明非極性有 機溶劑不能潤濕膜表面。非極性溶劑通常用於發光聚合物 及發光小分子。 將0.1 M NaOH水溶液添加至第二份pH 2 PAni/Nafion® 中直至pH為5.0。此份含Na+分散液經測定含有2.89% (w/w) PAni/Nafion®。自 pH 5_0 PAni/Nafion®製備之薄膜 之電導率經測定為3.8><1(Γ8 S/cm,其亦展示於表1中。經 測試,甲苯不能潤濕PAni/Nafion®薄膜。 139092.doc •39· 201005020 實例1 此實例闡述半導體奈米顆粒對增強PAni/Nafion®(聚(四 氟乙烯)/全氟醚磺酸)膜之電導率及可潤濕性之效應。 使用比較實例1中所製備pH 2及pH 5.0 PAni/Nafion®分 散液來闡釋本發明之實施例。向5.0166 g pH 2 PAni/Nafion® 分散液中添加 1.1313 g Celnax CX-Z300H-F2®(來自 Nissan Che.mical Industries 公司,Houston, Texas, USA之亞銻酸鋅水性分散液)。CX-Z300H-F2之pH為約7且 含有26.47% (w/w)亞銻酸辞顆粒,其大小小於20 nm。在 調配物中PAni/Nafion®聚合物與亞錄酸鋅之重量比為約 0.47。混合物形成在至少五個月内無顆粒沈澱跡象之穩定 分散液。在水乾燥後,其亦形成平滑透明膜。數據明確表 明,來自Celnax CX-Z300H-F2®之特定亞銻酸錫顆粒與 PAni/ Nafion®相容。然而,為改良粗糙度小於至少5 nm之 表面平滑度,欲藉由能量密度更高之方法而非簡單地將兩 種組份一起添加來改良該方法。在室溫下,含有 PAni/Nafion®及亞銻酸辞之分散液之薄膜電導率經測定為 6.6xl0·4 S/cm(兩個薄膜樣品之平均值),其亦展示於表1 中。電導率增強四個以上數量級。使一片薄膜與一滴甲苯 接觸。曱苯在膜表面上快速蔓延,此顯示膜變得可由常用 非極性有機溶劑潤濕。 亦向 pH 5.0 PAni/Nafion® 中添加 CX-Z300H-F2以確定其 對電導率及可潤濕性之效應。向5.0666 g pH 5.0 PAni/ NaHon®分散液中添加 1.1450 g Celnax CX-Z300H-F2®。在 139092.doc -40- 201005020 調配物中PAni/Nafion®聚合物與亞錄酸鋅之重量比為約 0.47。混合物形成無顆粒沈澱跡象之穩定分散液。在水乾 燥後其亦形成平滑透明膜。數據明確表明來自Celnax CX_ Z300H-F2®之特定亞銻酸錫顆粒與PAni/ Nafion®相容。然 而,為改良粗糙度小於至少5 nm之表面平滑度,欲藉由能 量密度更高之方法而非簡單地將兩種組份一起添加來改良 方法。在室溫下,含有PAni/Nafion®及亞銻酸鋅之分散液 之薄膜電導率經測定為9·3ΧΙΟ·4 S/cm(兩個薄膜樣品之平均 ® 值),其亦展示於表1中。電導率增強四個以上數量級。使 一片薄膜與一滴甲苯接觸。甲苯在膜表面上快速蔓延,此 顯示膜變得可由常用非極性有機溶劑潤濕。 表1 CX-Z300H-F2對電導率之效應 添加 CX-Z300H-F2 之 前分散液之pH及 陽離子 電導率(S/cm) 無 CX-Z300H-F2 含 CX-Z300H-F2 2.0/ΕΓ 1.2χ10'8 6.6X10·4 5.0/Na+ 3.8χ10·8 9.3X10·4 實例2 此實例闡述聚吡咯(PPy)水性分散液之製備,其係在 丁?£(四氟乙烯)與?5丑卩¥£(全氟化3,6-二氧雜-4-甲基-7-辛 烯磺酸)(全氟化多元酸)之共聚物之水性分散液存在下製 備。此PPy/聚(TFE-PSEPVE)之水性分散液係用於表現二氧 化矽奈米顆粒對PPY/聚(TFE-PSEPVE)固體膜之有機溶劑 139092.doc -41 · 201005020 可潤濕性之效應。聚(TFE-PSEPVE)之水性分散液係藉由 在水中將EW為1000之聚(TFE_PSEPVE)加熱至約270°c來 製備。此水性聚(TFE-PSEPVE)分散液具有25%(w/w)存於 水中之聚(TFE-PSEPVE)且用去離子水將其稀釋至10.8%, 之後將其用於與吡咯聚合。 在已公開美國專利申請案第2005-0205860號中所述之聚 (TFE-PSEPVE)分散液存在下聚合吡咯單體。聚合成份具 有以下莫耳比:聚(TFE-PSEPVE):吡咯=3.4; Na2S208:吡嘻 = 1.0 ; Fe2(S〇4)3:°比洛=〇.1。使反應進行15分鐘。 然後經由串聯連接之三個管柱抽吸水性PPy/聚(TFE-PSEPVE)分散液。該三個管柱分別含有Dowex M-3 1、 Dowex M-43及Dowex M-31 Na+。三種Dowex離子交換樹脂 得自 Dow Chemicals公司,Midland, Michigan,USA。隨後 藉由在5,000 psi下使用微流體化處理器M-110Y (Microfluidics,Massachusetts,USA)處理一次對經離子樹 脂處理之分散液實施微流體化。然後對微流體化分散液實 施過濾及脫氣以移除氧。分散液之pH經使用標準pH計量 測為4.0,且固體%藉由重量測定法測定為6.4%。經分散液 旋塗之後在130°C下於空氣中烘烤10分鐘之膜在室溫下具 有7.5xl〇-4 S/cm之電導率。 首先將水性PPy/聚(TFE-PSEPVE)分散液自6.4%稀釋至 3.12%,之後向其添加二氧化矽奈米顆粒。用於此實例中 之二氧化矽奈米顆粒分散液係得自Nissan Chemical公司之 IPA(異丙醇)-ST-S。IPA-ST-S含有26 w·%二氧化矽奈米顆 139092.doc •42· 201005020 粒。用Microtrac「奈米-超級」動態光散射來量測二氧化 矽之粒徑。人們發現,50體積%之二氧化矽之粒徑為7.1 nm(奈米)或更低。然後使二氧化矽分散液與相應量之PPy/ 聚(TFE-PSEPVE)分散液混合以相對於總固體(PPy/聚(TFE-PSEPVE)及二氧化石夕)具有列於表2中之期望二氧化石夕 w. %。數據明確表明,由於包括二氧化矽,藉由旋塗形成 之PPy/聚(TFE-PSEPVE)固體膜與對二曱苯或與苯甲醚之接 觸角顯著減小。 Ο 表2 二氧化矽對聚吡咯(PPy)/聚(TFE-PSEPVE)之 可潤濕性之效應 樣品 (基於總固體之二氧化矽W.%) 接觸角(度) 對二曱苯 苯甲醚 PPy/聚(TFE-PSEPVE) (0%二氧化矽) 50 55 PPy/聚(TFE-PSEPVE) (5.6%二氧化矽) 40 51 PPy/聚(TFE-PSEPVE) (10.5°/。二氧化矽) 29 42 PPy/聚(TFE-PSEPVE) (15.0%二氧化矽) 22 38 PPy/聚(TFE-PSEPVE) (20.0%二氧化矽) 19 31 PPy/聚(TFE-PSEPVE) (25_0°/〇 二氧化矽) 18 31 實例3 此實例闡述藍光發射體之溶液處理有機發光二極體之裝 139092.doc •43- 201005020 置性能’其使用具有或不具有:氧切之ρρ#(τρΕ_ PSEPVE)作為緩衝層。 使用實例2中具有或不具有二氧化⑦之聚 PSEPVE)分散液藉由在圖案化IT〇基板(裝置活性區域=224 mmX2·5 mm)上旋塗來形成緩衝層。在使用前清洗ΙΤ〇基板 並在UV區烘箱中處理10分鐘。在各種條件下設定每種具 有或不具有二氧化參之ppy/聚(TFE_PSEP VE)分散液之旋塗 以在空氣中及14〇t下烘烤7分鐘後提供5〇 nm之厚度。然 後將其轉移至乾燥箱中,其中在惰性室中實施所有其他頂 塗。然後用HT-2(其係具有電洞傳輸特性之含芳基胺共聚 物)之0.38% (w/v)甲苯溶液對緩衝層實施頂塗以在275。〇下 於氬中烘烤30分鐘後達成2〇 nm之厚度。冷卻後用含有 13.1螢光主體:藍螢光摻雜劑之發射層溶液對基板實施旋 塗,且隨後在135°C下加熱15分鐘以去除溶劑。層厚度為 約40 nm。然後對基板實施遮罩並將其置於真空室中。藉 由熱蒸發沈積1 0 nm厚之金屬喹琳酸鹽衍生物層作為電子 傳輸層,之後沈積0.8 nm之氟化鉋層,及100 nm2鋁陰極 層。使用玻璃蓋、吸氣劑包裝、及υν可固化環氧樹脂來 封裝該等裝置。藉由量測發光二極體樣品之以下特徵來對 其實施定性:(1)電流-電壓(I_V)曲線,(2)隨電壓變化之電 致發光輻射率’及(3)隨電壓變化之電致發光譜。所有三種 量測均係同時實施並藉由電腦來控制。藉由將led之電致 發光輻射率除以運行裝置所需電流密度來確定該裝置在某 一電壓下之電流效率(cd/A:^功率效率(Lm/W)係電流效率 J39092.doc -44- 201005020 除以工作電壓之值。結果展示於表3中,其表明二氧化石夕 對裝置性能無負面影響。 表3. 使用具有或不具有二氧化矽之PPy/聚(TFE-PSEPVE) 作為緩衝層之溶液處理藍光發射體》 ' 裝置緩衝層材料 f流效率 (cd/A) 量子 效率 (%) CIEY V (伏特) 在一定顯示 亮度下之Τ50〇ι> PPy/聚(TFE-PSEPVE) ® (〇%二氧化邦號裝置 5.1 5.3 0.1145 4.84 在513尼特下為 17217h PPy/聚(TFE-PSEPVE) (0%二氧化矽)2號裝置 4.8 5.1 0.1100 4.44 在4%尼特下為 18782h PPy/聚(TFE-PSEPVE) (10.5%二氧化矽)1號裝置 5.2 5.3 0.1163 4.51 在523尼特下為 23160h PPy/聚(TFE-PSEPVE) (10.5%二氧化矽)2號裝置 5.2 5.3 0.1138 4.52 在510尼特下為 22255 h PPy/聚(TFE-PSEPVE) (20.0°/◦二氧化矽)1號裝置 4.8 5.0 0.1094 4.56 在487尼特下為 21536h ❹ PPy/聚(TFE-PSEPVE) (20.0%二氧化矽)2號裝置 4.7 5.0 0.1098 4.46 在489尼特下為 20465 h 一- PPy/聚(TFE-PSEPVE) - (25.0%二氧化矽)1號裝置 4.8 5.0 0.1123 4.68 在502尼特下為 20606 h ---—---- PPy/聚(TFE-PSEPVE) (25.0%二氧化矽)2號裝置 5.0 5.2 0.1138 4.66 在510尼特下為 22208 h ~—1 除非指明否則所有數據皆對應於尼特’ ciey一c.i.e.色 度表(Commision Internationale de L'Eclairage,1931)之7色 標;T50(h)=以小時表示之在24°C下達到一半冗度之時 139092.doc -45· 201005020 間。 應主意,並非需要闡述於以上概述或實例中之所有活 動可月匕不需要某具體活動之某部分;及除上述活動外, 可實施-或多個其他活動。另外,活動所列之次序未必係 其實施次序。 在上述說明書中,已參考具體實施例闡述若干概念。然 而I,、S此項技術者應瞭冑,可在不冑離下文申請專利範 圍中所闌明本發明範嘴之情況下對其實施各種修改及改 變因此,應認為說明書及附圖具有聞釋性而非限定性意 義且所有此等修改皆意欲包括於本發明範缚内。 上,已根據具體實施例描述了本發明之益處、其他優點 及門題之解決方案。然而,益處、優點及問題之解決方案 及任何可達餘何益處、優點或解決方案或使之更突出^ 特徵S不應被理解為係任何或所有申請專利範圍之關鍵、 必須或基本特徵。 、應瞭解’為清晰起見’本文在單獨實施例之上下文中所 述之某些特徵亦可在單—實施例中以組合方式來提供。相 反’為簡便起見’在單-實施例之上下文中所述之各特徵 亦可單獨或以任何子組合方式來提供。 在本文所指定各範圍内數值之使用應描述為近似值,如 =所述範圍内之最小值及最大值二者皆㈣「約」先行限 疋一樣。以此方式,所述範圍可上下稍微改變以達成實質 上與範圍内之值相同的結果。同樣,#_個數值的某些要 素與不同值之彼等要素混合時,該等範圍之揭示内容意欲 139092.doc -46- 201005020 〃 表示為包括介於最小平均值與最大平均值之間之每個值在 内且包括可產生的分數值在内之連續範圍。此外,當揭示 更寬或更今範圍時,在本發明涵蓋範圍内應使來自一範圍 之最J值與來自另-範圍之最大值相匹配,且反之亦然。 【圖式簡單說明】 I發月係以實例方式來闡釋而非受限於附圖。 圖1係有機電子器件之示意圖。 【主要元件符號說明】 參 100 110 120 130 140 150 典型器件 陽極層 缓衝層 電活性層 可選電子注入/傳輸層 陰極層 139092.doc -47·Comparative Example A This comparative example illustrates the low electrical conductivity and non-wetability of pAni/Nafi(10) (poly(tetrafluoroethylene)/perfluoroether acid) membranes to which inorganic nanoparticles are not added. The PAni/Nafion® dispersion used in this example was prepared using an aqueous Nafion® colloidal dispersion having an EW (acid equivalent) of 1000. 2S% (w/w) of the Nafion® dispersion is prepared using a procedure similar to that of the procedure of Section 2 of the summer example of U.S. Patent No. 6, 丨 5, 426, but at a temperature of about 27 且 and thereafter The water was diluted to form a 12.0% (w/w) dispersion for polymerization. In a 500 mL autoclave, 96.4 g of 12% solids Nafi〇n@139092.doc •38-201005020 dispersion (11.57 mmol S03H group), 103 g of water were added. The diluted Nafion® was stirred at 300 RPM using an overhead stirrer with two stage propeller blades. Quickly add 1.21 g (5.09 mmol) of sodium persulfate (Na2S208) dissolved in 15 mL of water, and 422 pL (4.63 mmol) dissolved in 266 μM (9.28 mmol) of HC1 and 20 mL of water to the diluted Nafion® dispersion. aniline. The polymerization solution became opaque and extremely viscous, but the color did not change visually within 5 minutes. About 20 mg of ferric sulfate was added, but no visible change occurred. However, after 30 minutes the polymerization reaction began to turn pale blue and then © turned green. After about 8 hours, 25 g of each of Dowex M3 1 and Dowex M43 ion exchange resin and 100 g of deionized water were added to the polymerization mixture. The mixture was stirred overnight and then filtered through a filter paper. 100 g of deionized water was added to the filtrate to reduce the viscosity. Divide it into 5 equal parts. One remains as it is, without adding alkali. The fraction was determined to have a pH of 2 and contained 2.88% (w/w) PAni/Nafion®. Films were prepared from PAni/Nafion® and subsequently baked in air at 130 °C. The room temperature conductivity of the film was determined to be 1·2 χ1 (Γ8 S/cm, which is also shown in Table 1. A small drop of f Benzene® was placed on a piece of film, but toluene quickly rolled off the film, indicating that Polar organic solvents do not wet the surface of the film. Non-polar solvents are commonly used for luminescent polymers and luminescent small molecules. Add 0.1 M NaOH aqueous solution to the second pH 2 PAni/Nafion® until the pH is 5.0. This part contains Na+ dispersion. The solution was determined to contain 2.89% (w/w) PAni/Nafion®. The conductivity of the film prepared from pH 5_0 PAni/Nafion® was determined to be 3.8 <1 (Γ8 S/cm, which is also shown in Table 1). Toluene does not wet PAni/Nafion® film. 139092.doc •39· 201005020 Example 1 This example illustrates the modification of PAni/Nafion® (poly(tetrafluoroethylene)/perfluoroether sulfonate by semiconductor nanoparticle pairs) The effect of the conductivity and wettability of the film. The pH 2 and pH 5.0 PAni/Nafion® dispersions prepared in Comparative Example 1 were used to illustrate the examples of the present invention. To 5.0166 g of pH 2 PAni/Nafion® dispersion Add 1.1313 g Celnax CX-Z300H-F2® (from Nissan Che.mical Industries, Houston, T Exas, USA's aqueous zinc phthalate dispersion. CX-Z300H-F2 has a pH of about 7 and contains 26.47% (w/w) of yttrium sulphate particles, which are less than 20 nm in size. PAni/ in the formulation. The weight ratio of Nafion® polymer to zinc citrate is about 0.47. The mixture forms a stable dispersion with no signs of particle precipitation for at least five months. After water drying, it also forms a smooth transparent film. The data clearly indicates that The specific tin bismuth silicate particles of Celnax CX-Z300H-F2® are compatible with PAni/ Nafion®. However, to improve the surface smoothness of roughness less than at least 5 nm, it is desirable to use a higher energy density rather than simply The two components were added together to improve the method. At room temperature, the film conductivity of the dispersion containing PAni/Nafion® and sulfite was determined to be 6.6 x 10·4 S/cm (two film samples) The average value), which is also shown in Table 1. The conductivity is enhanced by more than four orders of magnitude. A piece of film is contacted with a drop of toluene. The benzene is rapidly spread on the surface of the film, and the film becomes wettable by a common non-polar organic solvent. Also added CX-Z300H to pH 5.0 PAni/Nafion® -F2 to determine its effect on conductivity and wettability. Add 1.1450 g of Celnax CX-Z300H-F2® to 5.0666 g of pH 5.0 PAni/NaHon® dispersion. The weight ratio of PAni/Nafion® polymer to zinc citrate in the formulation of 139092.doc -40- 201005020 is about 0.47. The mixture formed a stable dispersion with no signs of particle precipitation. It also forms a smooth transparent film after the water is dried. The data clearly indicates that the specific tin bismuth silicate particles from Celnax CX_ Z300H-F2® are compatible with PAni/ Nafion®. However, in order to improve the surface smoothness of roughness less than at least 5 nm, the method is to be improved by a method of higher energy density rather than simply adding the two components together. At room temperature, the film conductivity of the dispersion containing PAni/Nafion® and zinc tellurite was determined to be 9·3 ΧΙΟ·4 S/cm (average y value of two film samples), which is also shown in Table 1. in. The conductivity is enhanced by more than four orders of magnitude. A piece of film was brought into contact with a drop of toluene. Toluene spreads rapidly on the surface of the film, and the display film becomes wettable by a common non-polar organic solvent. Table 1 Effect of CX-Z300H-F2 on Conductivity pH and cation conductivity (S/cm) of dispersion before adding CX-Z300H-F2 No CX-Z300H-F2 with CX-Z300H-F2 2.0/ΕΓ 1.2χ10' 8 6.6X10·4 5.0/Na+ 3.8χ10·8 9.3X10·4 Example 2 This example illustrates the preparation of a polypyrrole (PPy) aqueous dispersion, which is in D? £(tetrafluoroethylene) with? 5 An aqueous dispersion of a copolymer of ugly ¥£(perfluorinated 3,6-dioxa-4-methyl-7-octenesulfonic acid) (perfluorinated polyacid) is prepared. The aqueous dispersion of PPy/poly(TFE-PSEPVE) is used to express the effect of cerium oxide nanoparticle on the wettability of organic solvent of PPY/poly(TFE-PSEPVE) solid film 139092.doc -41 · 201005020 . The aqueous dispersion of poly(TFE-PSEPVE) was prepared by heating poly(TFE_PSEPVE) having an EW of 1000 to about 270 ° C in water. This aqueous poly(TFE-PSEPVE) dispersion had 25% (w/w) poly(TFE-PSEPVE) in water and was diluted to 10.8% with deionized water, which was then used for polymerization with pyrrole. The pyrrole monomer is polymerized in the presence of a poly(TFE-PSEPVE) dispersion as described in U.S. Patent Application Serial No. 2005-0205860. The polymerization component had the following molar ratio: poly(TFE-PSEPVE): pyrrole = 3.4; Na2S208: pyridene = 1.0; Fe2(S〇4)3: ° pirox = 〇.1. The reaction was allowed to proceed for 15 minutes. The aqueous PPy/poly(TFE-PSEPVE) dispersion was then pumped through three columns connected in series. The three columns contain Dowex M-3 1, Dowex M-43 and Dowex M-31 Na+, respectively. Three Dowex ion exchange resins were obtained from Dow Chemicals, Midland, Michigan, USA. The ionized resin treated dispersion was then microfluidized by treatment at 5,000 psi using a microfluidization processor M-110Y (Microfluidics, Massachusetts, USA). The microfluidized dispersion is then filtered and degassed to remove oxygen. The pH of the dispersion was 4.0 using a standard pH measurement, and the % solids was determined by gravimetry to be 6.4%. The film which was baked in the air at 130 ° C for 10 minutes after spin coating by the dispersion had a conductivity of 7.5 x 〇 -4 S/cm at room temperature. The aqueous PPy/poly(TFE-PSEPVE) dispersion was first diluted from 6.4% to 3.12%, after which cerium oxide nanoparticles were added thereto. The cerium oxide nanoparticle dispersion used in this example was obtained from IPA (isopropyl alcohol)-ST-S of Nissan Chemical Co., Ltd. IPA-ST-S contains 26 w·% cerium oxide nanoparticle 139092.doc •42· 201005020 granules. The particle size of the cerium oxide was measured by Microtrac "nano-super" dynamic light scattering. It has been found that 50% by volume of cerium oxide has a particle diameter of 7.1 nm (nano) or less. The cerium oxide dispersion is then mixed with the corresponding amount of PPy/poly(TFE-PSEPVE) dispersion to have the desired values listed in Table 2 relative to the total solids (PPy/poly(TFE-PSEPVE) and dioxide dioxide). Oxide eve w. %. The data clearly shows that the contact angle of the PPy/poly(TFE-PSEPVE) solid film formed by spin coating with p-diphenyl or anisole is significantly reduced due to the inclusion of cerium oxide. Ο Table 2 Effect of cerium oxide on the wettability of polypyrrole (PPy)/poly(TFE-PSEPVE) (based on total solids of cerium oxide W.%) Contact angle (degrees) p-benzophenone Ether PPy/poly(TFE-PSEPVE) (0% cerium oxide) 50 55 PPy/poly(TFE-PSEPVE) (5.6% cerium oxide) 40 51 PPy/poly(TFE-PSEPVE) (10.5°/.矽) 29 42 PPy/poly(TFE-PSEPVE) (15.0% cerium oxide) 22 38 PPy/poly(TFE-PSEPVE) (20.0% cerium oxide) 19 31 PPy/poly (TFE-PSEPVE) (25_0°/ 〇O2) 18 31 Example 3 This example illustrates the solution of a blue-emitting emitter solution for organic light-emitting diodes. 139092.doc •43- 201005020 Performance [with or without: oxygen-cutting ρρ#(τρΕ_ PSEPVE ) as a buffer layer. The buffer layer was formed by spin coating on a patterned IT(R) substrate (device active area = 224 mm X 2 · 5 mm) using the poly PSEPVE dispersion with or without dioxide 7 in Example 2. The ruthenium substrate was cleaned before use and treated in a UV zone oven for 10 minutes. Spin coating of each of the ppy/poly(TFE_PSEP VE) dispersions with or without oxidized ginseng was set under various conditions to provide a thickness of 5 〇 nm after baking in air for 7 minutes at 14 Torr. It is then transferred to a dry box where all other toppings are carried out in an inert chamber. The buffer layer was then top coated at 275 with a 0.38% (w/v) toluene solution of HT-2, which is an arylamine-containing copolymer having a hole transporting property. The thickness of 2 〇 nm was achieved after baking in argon for 30 minutes. After cooling, the substrate was spin-coated with an emissive layer solution containing 13.1 fluorescent host: blue fluorescent dopant, and then heated at 135 ° C for 15 minutes to remove the solvent. The layer thickness is about 40 nm. The substrate is then masked and placed in a vacuum chamber. A 10 nm thick metal quinolinate derivative layer was deposited by thermal evaporation as an electron transport layer, followed by a 0.8 nm fluorinated planing layer and a 100 nm2 aluminum cathode layer. The devices are packaged using a glass cover, a getter package, and a υν curable epoxy. It is characterized by measuring the following characteristics of the light-emitting diode sample: (1) current-voltage (I_V) curve, (2) electroluminescence radiance as a function of voltage', and (3) change with voltage Electroluminescence spectrum. All three measurements are performed simultaneously and controlled by a computer. The current efficiency of the device at a certain voltage is determined by dividing the electroluminescence radiance of the LED by the current density required by the operating device (cd/A: ^ power efficiency (Lm/W) current efficiency J39092.doc - 44- 201005020 Divided by the value of the operating voltage. The results are shown in Table 3, which shows that the dioxide has no negative impact on device performance. Table 3. PPy/poly (TFE-PSEPVE) with or without cerium oxide Solution as a buffer layer for blue emitters' Device buffer material f flow efficiency (cd/A) quantum efficiency (%) CIEY V (volts) at a certain display brightness 〇50〇ι> PPy/poly(TFE-PSEPVE ® (〇%2 oxidation unit 5.1 5.3 0.1145 4.84 under 513 nits 17217h PPy/poly (TFE-PSEPVE) (0% cerium oxide) 2 device 4.8 5.1 0.1100 4.44 under 4% nit 18782h PPy/poly (TFE-PSEPVE) (10.5% cerium oxide) No. 1 device 5.2 5.3 0.1163 4.51 23160h under 523 nits PPy/poly (TFE-PSEPVE) (10.5% cerium oxide) No. 2 device 5.2 5.3 0.1138 4.52 at 510 nits is 22255 h PPy / poly (TFE-PSEPVE) (20.0 ° / ◦ ◦ 1) No. 1 device 4.8 5.0 0.1094 4 .56 under 487 nits is 21536h ❹ PPy/poly(TFE-PSEPVE) (20.0% cerium oxide) No. 2 device 4.7 5.0 0.1098 4.46 Under 489 nits is 20465 h a-PPy/poly (TFE-PSEPVE) - (25.0% cerium oxide) No. 1 device 4.8 5.0 0.1123 4.68 20606 h under 502 nits ------- PPy/poly (TFE-PSEPVE) (25.0% cerium oxide) No. 2 device 5.0 5.2 0.1138 4.66 Under the 510 nits, 22208 h ~ -1 Unless otherwise specified, all data correspond to the 7-color standard of the Nite ' ciey cie color table (Commision Internationale de L'Eclairage, 1931); T50 (h) = in hours, at half time at 24 ° C, 139092.doc -45· 201005020. It should be agreed that it is not necessary to elaborate on all activities in the above overview or examples. In addition to; and in addition to the above activities, may implement - or a number of other activities. In addition, the order in which the activities are listed is not necessarily the order in which they are implemented. In the above specification, several concepts have been set forth with reference to the specific embodiments. However, I, S, and the technical personnel of the present invention should be able to implement various modifications and changes without departing from the scope of the invention as set forth in the following patent application. It is intended to be inclusive, and not restrictive. The benefits, other advantages, and solutions of the present invention have been described in terms of specific embodiments. However, benefits, advantages, and solutions to problems, and any benefits, advantages, or solutions that may be more prominent. Features S should not be construed as being a critical, essential, or essential feature of any or all of the scope of the claims. It is to be understood that certain features that are described herein in the context of separate embodiments may also be provided in combination in a single embodiment. The features described in the context of the single-embodiment may be provided individually or in any sub-combination. The use of values within the ranges specified herein should be described as approximations, such as = the minimum and maximum values within the range are (4) "about" precedence limits. In this way, the range can be changed slightly up and down to achieve results that are substantially the same as the values in the range. Similarly, when some elements of the #_ value are mixed with the elements of the different values, the disclosure of the ranges is intended to be 139092.doc -46- 201005020 〃 expressed as including between the minimum and maximum Each value is inclusive and includes a continuous range of fractional values that can be generated. Moreover, when a broader or broader range is disclosed, the maximum J value from a range should be matched to the maximum value from the other range, and vice versa, within the scope of the present invention. [Simple Description of the Drawings] I is explained by way of example and not by the drawings. Figure 1 is a schematic illustration of an organic electronic device. [Main component symbol description] Reference 100 110 120 130 140 150 Typical device Anode layer Buffer layer Electroactive layer Optional electron injection/transport layer Cathode layer 139092.doc -47·

Claims (1)

201005020 七、申請專利範圍: 1 _ 一種組合物,其包含: 至少一種摻雜有至少一種高度氟化的酸聚合物之導電 聚合物之水性分散液,及 無機奈米顆粒。 2·如33求項1之組合物,其中該導電聚合物係選自由以下 成之群.聚°塞吩、聚(砸吩)' 聚(蹄吩)、聚°比略、聚 苯胺、多環芳香族聚合物、其共聚物、及其組合。 ❹3.如凊求項2之組合物’其中該導電聚合物係選自由以下 成之群.聚苯胺、聚°塞吩、聚D比洛、聚合稠合多環雜 芳香族化合物、其共聚物、及其組合。 4. 如請求項3之組合物,其中該導電聚合物係選自由以下 組成之群:未經取代之聚苯胺、聚(3,4_伸乙基二氧基噻 吩)、未經取代之聚吡咯、聚(噻吩并(2,3_b)噻吩)、聚(噻 吩并(3,2-b)售吩)、及聚(噻吩并(3,4-b)噻吩)。 5. 如請求項1之組合物’其中該高度氟化的酸聚合物係至 β )95%iU 匕。 6. 如請求項1之組合物,其中該高度氟化的酸聚合物係選 自磺酸及磺醯亞胺。 7·如請求項1之組合物,其中該高度氟化的酸聚合物係具 有全氟-醚-磺酸側鍵之全氟烯烴。 8.如凊求項1之組合物,其中該高度氟化的酸聚合物係選 自由以下組成之群:1,1-二氟乙烯與2-(1,1-二氟_2_(三氣 甲基)烯丙氧基)-1,1,2,2-四氟乙磺酸之共聚物、及乙缔與 139092.doc 201005020 2-(2-(12,2-三氟乙烯氧基)_ 基)^Μ-四氣乙續酸之共聚物。,,",3。、氟丙氧 9 mrr:合物,其中該高度氟化的酸聚合物係選 =與全氟(3,6d甲基_7_辛烯續酸)之共 :及四氣乙稀與全•氧雜-戍稀續酸)之共聚 1〇 項1之組合物m等無機奈米顆粒係半導 由金屬 由以下 、五氧201005020 VII. Patent Application Range: 1 _ A composition comprising: at least one aqueous dispersion of a conductive polymer doped with at least one highly fluorinated acid polymer, and inorganic nanoparticles. 2. The composition of claim 1, wherein the conductive polymer is selected from the group consisting of polythiophene, poly(porphin) poly (hoof pheno), polypyramidine, polyaniline, and more Acyclic aromatic polymers, copolymers thereof, and combinations thereof. ❹3. The composition of claim 2, wherein the conductive polymer is selected from the group consisting of polyaniline, poly(ephedophene), poly D-bilol, polymeric fused polycyclic heteroaromatic compound, copolymer thereof And their combinations. 4. The composition of claim 3, wherein the conductive polymer is selected from the group consisting of unsubstituted polyaniline, poly(3,4-extended ethyldioxythiophene), unsubstituted poly Pyrrole, poly(thieno(2,3-b)thiophene), poly(thieno(3,2-b) sold), and poly(thieno(3,4-b)thiophene). 5. The composition of claim 1 wherein the highly fluorinated acid polymer is to beta 95% iU 匕. 6. The composition of claim 1 wherein the highly fluorinated acid polymer is selected from the group consisting of sulfonic acid and sulfonimide. 7. The composition of claim 1 wherein the highly fluorinated acid polymer is a perfluoroolefin having a perfluoro-ether-sulfonic acid side bond. 8. The composition of claim 1, wherein the highly fluorinated acid polymer is selected from the group consisting of: 1,1-difluoroethylene and 2-(1,1-difluoro-2-((three gas) Copolymer of methyl)allyloxy)-1,1,2,2-tetrafluoroethanesulfonic acid, and bismuth and 139092.doc 201005020 2-(2-(12,2-trifluoroethyleneoxy) _ base) ^ Μ - copolymer of four gas and ethyl acid. ,,",3. Fluorine-oxygen 9 mrr: compound, wherein the highly fluorinated acid polymer is selected as follows: with perfluoro(3,6d methyl-7-octene acid): and tetraethylene and ethylene. Copolymerization of oxa-anthracene acid) composition of the first item, m, and other inorganic nano-particles are semi-conductive by metal from the following, five oxygen η.如喷求項10之組合物,《中該等奈米顆粒係選自 硫化物、金屬氧化物、及其組合組成之群。 12.如明求項! i之組合物其中該金屬氧化物係選自 "成之群,綈酸鋅、氧化銦錫、缺氧的三氧化鉬 化二#1、及其組合。 其中該等無機奈米顆粒係絕緣 13 _如凊求項1之組合物 體。 14.如呀求項13之組合物其中該等奈米顆粒係選自由以下 組成之群:氧化硬、氧化欽、氧化錯、三氧化翻、氧化 Q 釩、氧化鋁、氧化鋅、氧化釤、氧化釔、氧化铯、氧化 銅、氧化錫、氧化銻、及其組合。 15·如請求項1之組合物,其中該等無機奈米顆粒係選自由 以下组成之群:硫化鑛、硫化銅、疏化錯、硫化汞、硫 化姻、硫化銀、硫化鈷、硫化鎳、硫化鉬' Ni/Cd硫化 物、Co/Cd硫化物、cd/In硫化物、Pd-Co-Pd硫化物、及 其組合。 139092.doc -2- 201005020 16'如6青求項1之組合物,其中奈米顆粒與導電聚合物之重 量比係在0.1-10.0之範圍内。 17. —種自如請求項1之組合物製備之膜。 18. 如請求項17之膜,其與對二甲苯之接觸角小於5〇。。 19. 如請求項n之膜,其在46〇 nm下之折射率大於1 4。 20. 一種電子器件’其包含至少一個自如請求们之組合物 製備之廣。 21. 如請求項20之器件,其中該層係緩衝層。η. The composition of claim 10, wherein the nanoparticles are selected from the group consisting of sulfides, metal oxides, and combinations thereof. 12. The composition of claim i wherein the metal oxide is selected from the group consisting of zinc phthalate, indium tin oxide, anoxic molybdenum trioxide, and combinations thereof. Wherein the inorganic nanoparticles are insulated, such as the composition of claim 1. 14. The composition of claim 13 wherein the nanoparticles are selected from the group consisting of oxidized hard, oxidized, oxidized, trioxide, oxidized Q vanadium, alumina, zinc oxide, cerium oxide, Cerium oxide, cerium oxide, copper oxide, tin oxide, cerium oxide, and combinations thereof. The composition of claim 1, wherein the inorganic nanoparticles are selected from the group consisting of sulfide ore, copper sulfide, thinning, mercury sulfide, sulfurized, silver sulfide, cobalt sulfide, nickel sulfide, Molybdenum sulfide 'Ni/Cd sulfide, Co/Cd sulfide, cd/In sulfide, Pd-Co-Pd sulfide, and combinations thereof. 139092.doc -2- 201005020 16 'A composition according to claim 6, wherein the weight ratio of the nanoparticle to the conductive polymer is in the range of from 0.1 to 10.0. 17. A film prepared from the composition of claim 1. 18. The film of claim 17, which has a contact angle with para-xylene of less than 5 Å. . 19. The film of claim n, which has a refractive index greater than 14 at 46 〇 nm. 20. An electronic device 'which comprises at least one freely available composition of the composition. 21. The device of claim 20, wherein the layer is a buffer layer. 22. 如請求項21之器件’其包含陽極、緩衝屠 β、電活性層22. The device of claim 21, which comprises an anode, a buffer beta, an electroactive layer 139092.doc139092.doc
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