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TW200739265A - Positive photoresist composition and method of forming photoresist pattern using the same - Google Patents

Positive photoresist composition and method of forming photoresist pattern using the same

Info

Publication number
TW200739265A
TW200739265A TW095145055A TW95145055A TW200739265A TW 200739265 A TW200739265 A TW 200739265A TW 095145055 A TW095145055 A TW 095145055A TW 95145055 A TW95145055 A TW 95145055A TW 200739265 A TW200739265 A TW 200739265A
Authority
TW
Taiwan
Prior art keywords
forming
photoresist composition
positive photoresist
photoresist pattern
alkali soluble
Prior art date
Application number
TW095145055A
Other languages
English (en)
Other versions
TWI344580B (zh
Inventor
Koichi Misumi
Koji Saito
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200739265A publication Critical patent/TW200739265A/zh
Application granted granted Critical
Publication of TWI344580B publication Critical patent/TWI344580B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095145055A 2005-12-06 2006-12-04 Positive photoresist composition and method of forming photoresist pattern using the same TW200739265A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005351377 2005-12-06

Publications (2)

Publication Number Publication Date
TW200739265A true TW200739265A (en) 2007-10-16
TWI344580B TWI344580B (zh) 2011-07-01

Family

ID=38122807

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095145055A TW200739265A (en) 2005-12-06 2006-12-04 Positive photoresist composition and method of forming photoresist pattern using the same

Country Status (5)

Country Link
US (1) US20090291393A1 (zh)
JP (1) JP4865729B2 (zh)
KR (1) KR20080049141A (zh)
TW (1) TW200739265A (zh)
WO (1) WO2007066661A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460555B (zh) * 2008-07-29 2014-11-11 Toagosei Co Ltd Method for forming pattern of conductive polymer
CN114730131A (zh) * 2019-11-14 2022-07-08 默克专利股份有限公司 含碱可溶的丙烯酸类树脂的重氮萘醌(dnq)型光刻胶组合物

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KR100968626B1 (ko) 2008-05-27 2010-07-08 삼성전기주식회사 하우징, 이를 구비한 수소발생장치 및 연료전지 발전시스템
JP5592064B2 (ja) * 2008-07-07 2014-09-17 東京応化工業株式会社 ポジ型レジスト組成物
CN103091987B (zh) * 2008-12-26 2016-11-23 日立化成株式会社 正型感光性树脂组合物、抗蚀图形的制造方法、半导体装置以及电子器件
KR20110121301A (ko) * 2010-04-30 2011-11-07 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 패턴 형성 방법 및 박막 트랜지스터 기판의 제조 방법
WO2014010473A1 (ja) 2012-07-10 2014-01-16 三菱レイヨン株式会社 感光性樹脂組成物、感光性ドライフィルム、パターン形成方法、プリント配線板およびその製造方法
JP5686217B1 (ja) * 2014-04-30 2015-03-18 住友ベークライト株式会社 感光性樹脂材料および樹脂膜
JP7317704B2 (ja) * 2016-10-12 2023-07-31 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 化学増幅型ポジ型フォトレジスト組成物およびそれを用いたパターンの形成方法
JP6922770B2 (ja) * 2017-02-22 2021-08-18 信越化学工業株式会社 パターン形成方法
JP2021140109A (ja) * 2020-03-09 2021-09-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH 反射率調整剤を含んでなるネガ型感光性組成物

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US4148654A (en) * 1976-07-22 1979-04-10 Oddi Michael J Positive acting photoresist comprising diazide ester, novolak resin and rosin
DE3603578A1 (de) * 1986-02-06 1987-08-13 Hoechst Ag Neue bis-1,2-naphthochinon-2-diazid-sulfonsaeure- amide, ihre verwendung in einem strahlungsempfindlichen gemisch und strahlungsempfindliches kopiermaterial
JPS62262043A (ja) * 1986-05-08 1987-11-14 Tokyo Ohka Kogyo Co Ltd ポジ型感光性樹脂組成物
US5238771A (en) * 1988-05-31 1993-08-24 Konica Corporation Lithographic printing plate utilizing aluminum substrate with photosensitive layer containing o-naphthoquinonediazide sulfonic acid ester, alkali soluble resin and select additive
JPH0296163A (ja) * 1988-10-03 1990-04-06 Konica Corp 感光性組成物
JPH04311775A (ja) * 1991-04-11 1992-11-04 Hitachi Chem Co Ltd ポジ型感光性アニオン電着塗料樹脂組成物、これを用いた電着塗装浴及び電着塗装法
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JP4150834B2 (ja) * 1999-03-04 2008-09-17 Ｊｓｒ株式会社 感光性樹脂組成物、感光性樹脂膜およびこれらを用いたバンプ形成方法
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JP3710717B2 (ja) * 2001-03-06 2005-10-26 東京応化工業株式会社 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法
JP4213366B2 (ja) * 2001-06-12 2009-01-21 Ａｚエレクトロニックマテリアルズ株式会社 厚膜レジストパターンの形成方法
JP2004219536A (ja) * 2003-01-10 2004-08-05 Hitachi Chem Co Ltd 感光性樹脂組成物、回路形成用基板、レジストパターンの製造法、プリント配線板の製造法
JP2005037712A (ja) * 2003-07-15 2005-02-10 Hitachi Chem Co Ltd パターン化されたレジスト膜の製造方法、レジスト膜形成済回路形成用基板、及びプリント配線板の製造方法
JP2006154434A (ja) * 2004-11-30 2006-06-15 Jsr Corp 感光性樹脂組成物、感光性樹脂膜およびこれらを用いたバンプ形成方法
KR20060090520A (ko) * 2005-02-07 2006-08-11 삼성전자주식회사 감광성 수지 및 상기 감광성 수지로 이루어진 패턴을포함하는 박막 표시판 및 그 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460555B (zh) * 2008-07-29 2014-11-11 Toagosei Co Ltd Method for forming pattern of conductive polymer
CN114730131A (zh) * 2019-11-14 2022-07-08 默克专利股份有限公司 含碱可溶的丙烯酸类树脂的重氮萘醌(dnq)型光刻胶组合物

Also Published As

Publication number Publication date
KR20080049141A (ko) 2008-06-03
WO2007066661A1 (ja) 2007-06-14
US20090291393A1 (en) 2009-11-26
TWI344580B (zh) 2011-07-01
JPWO2007066661A1 (ja) 2009-05-21
JP4865729B2 (ja) 2012-02-01

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