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TW200722699A - Oven for controlled heating of compounds at varying temperatures - Google Patents

Oven for controlled heating of compounds at varying temperatures

Info

Publication number
TW200722699A
TW200722699A TW095114190A TW95114190A TW200722699A TW 200722699 A TW200722699 A TW 200722699A TW 095114190 A TW095114190 A TW 095114190A TW 95114190 A TW95114190 A TW 95114190A TW 200722699 A TW200722699 A TW 200722699A
Authority
TW
Taiwan
Prior art keywords
heating
oven
assembly
compounds
controlled heating
Prior art date
Application number
TW095114190A
Other languages
English (en)
Other versions
TWI301537B (en
Inventor
Kin-Yik Hung
Srikanth Narasimalu
Wei-Ling Chan
Man-Wai Chan
Cheuk-Wah Tang
Kai Chiu Wu
Original Assignee
Asm Assembly Automation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Assembly Automation Ltd filed Critical Asm Assembly Automation Ltd
Publication of TW200722699A publication Critical patent/TW200722699A/zh
Application granted granted Critical
Publication of TWI301537B publication Critical patent/TWI301537B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/14—Arrangements of heating devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Tunnel Furnaces (AREA)
  • Furnace Details (AREA)
TW095114190A 2005-04-29 2006-04-21 Oven for controlled heating of compounds at varying temperatures TWI301537B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/118,022 US7402778B2 (en) 2005-04-29 2005-04-29 Oven for controlled heating of compounds at varying temperatures

Publications (2)

Publication Number Publication Date
TW200722699A true TW200722699A (en) 2007-06-16
TWI301537B TWI301537B (en) 2008-10-01

Family

ID=37194987

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095114190A TWI301537B (en) 2005-04-29 2006-04-21 Oven for controlled heating of compounds at varying temperatures

Country Status (5)

Country Link
US (1) US7402778B2 (zh)
KR (1) KR100814271B1 (zh)
CN (1) CN100505158C (zh)
SG (1) SG126908A1 (zh)
TW (1) TWI301537B (zh)

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* Cited by examiner, † Cited by third party
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DE102005044702A1 (de) * 2005-09-19 2007-03-22 BSH Bosch und Siemens Hausgeräte GmbH Hocheinbau-Gargerät
JP2007123413A (ja) * 2005-10-26 2007-05-17 Elpida Memory Inc 半導体装置の製造方法
KR101030764B1 (ko) * 2006-09-29 2011-04-27 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치의 제조 방법 및 제조 장치
US10159114B2 (en) * 2008-03-18 2018-12-18 Watlow Electric Manufacturing Company Layered heater system with honeycomb core structure
US8778080B2 (en) * 2008-05-21 2014-07-15 Institute Of Nuclear Energy Research, Atomic Energy Council Apparatus for double-plasma graft polymerization at atmospheric pressure
DE102009003495C5 (de) * 2009-02-17 2015-11-19 Hanwha Q.CELLS GmbH Lötverfahren und Lötvorrichtung
JP3170508U (ja) * 2011-05-19 2011-09-22 勝美 釣賀 リフロー炉用保温体
US20130067761A1 (en) * 2011-09-16 2013-03-21 Shenzhen China Star Optoelectronics Technology Co. Ltd. Drying apparatus
CN102581417A (zh) * 2012-03-09 2012-07-18 北京元陆鸿远电子技术有限公司 可提高热源利用率的微型回流焊台
KR101459101B1 (ko) * 2013-04-22 2014-11-20 비전세미콘 주식회사 반도체 패키지 제조용 가압오븐
CN104567365A (zh) * 2014-12-16 2015-04-29 广东风华高新科技股份有限公司 钟罩炉及其承烧平台
JP6561817B2 (ja) * 2015-12-15 2019-08-21 富士電機機器制御株式会社 熱処理装置
CN106628836A (zh) * 2017-02-23 2017-05-10 重庆江东机械有限责任公司 一种保温输送系统及其保温方法、应用
TWI635247B (zh) 2017-10-02 2018-09-11 財團法人工業技術研究院 固化設備
CN113145417B (zh) * 2021-04-02 2022-09-27 广东兴发铝业有限公司 一种铝合金型材的静电喷涂工艺
CN115674550B (zh) * 2022-10-26 2024-02-23 安徽尚诺捷顺智能科技有限公司 用于冰箱门体生产的固化烘炉

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JPH03278523A (ja) * 1990-03-28 1991-12-10 Nec Corp 半導体ウェーハのランプ式熱処理装置
US5662469A (en) * 1991-12-13 1997-09-02 Tokyo Electron Tohoku Kabushiki Kaisha Heat treatment method
US5268989A (en) * 1992-04-16 1993-12-07 Texas Instruments Incorporated Multi zone illuminator with embeded process control sensors and light interference elimination circuit
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
JPH08236920A (ja) * 1995-02-22 1996-09-13 Nippon Bunka Seiko Kk プリント基板のはんだリフロー装置
KR0165484B1 (ko) * 1995-11-28 1999-02-01 김광호 탄탈륨산화막 증착 형성방법 및 그 장치
US5892886A (en) * 1996-02-02 1999-04-06 Micron Technology, Inc. Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes
JP3451166B2 (ja) * 1996-07-08 2003-09-29 大日本スクリーン製造株式会社 基板熱処理装置
KR100203780B1 (ko) 1996-09-23 1999-06-15 윤종용 반도체 웨이퍼 열처리 장치
JPH1197448A (ja) * 1997-09-18 1999-04-09 Kemitoronikusu:Kk 熱処理装置とこれを用いた半導体結晶の熱処理法
US6073576A (en) * 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
JPH11272342A (ja) * 1998-03-24 1999-10-08 Dainippon Screen Mfg Co Ltd 基板熱処理装置および基板熱処理方法
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US6610968B1 (en) * 2000-09-27 2003-08-26 Axcelis Technologies System and method for controlling movement of a workpiece in a thermal processing system
US6998580B2 (en) * 2002-03-28 2006-02-14 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
JP2005538566A (ja) * 2002-09-10 2005-12-15 アクセリス テクノロジーズ， インコーポレイテッド 温度固定されたチャックを用いた温度可変プロセスにおける基板の加熱方法
US6768084B2 (en) * 2002-09-30 2004-07-27 Axcelis Technologies, Inc. Advanced rapid thermal processing (RTP) using a linearly-moving heating assembly with an axisymmetric and radially-tunable thermal radiation profile
JP4257576B2 (ja) * 2003-03-25 2009-04-22 ローム株式会社 成膜装置
JP4250469B2 (ja) * 2003-07-14 2009-04-08 キヤノンマーケティングジャパン株式会社 熱処理装置及び熱処理方法
KR100539240B1 (ko) * 2003-08-01 2005-12-27 삼성전자주식회사 복수의 백사이드 가스 유로를 가지는 ｃｖｄ 장치 및 이를이용한 박막 형성 방법

Also Published As

Publication number Publication date
SG126908A1 (en) 2006-11-29
US7402778B2 (en) 2008-07-22
KR100814271B1 (ko) 2008-03-18
US20060249501A1 (en) 2006-11-09
CN100505158C (zh) 2009-06-24
TWI301537B (en) 2008-10-01
CN1854659A (zh) 2006-11-01
KR20060113547A (ko) 2006-11-02

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