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TW200644305A - Polymeric gate dielectrics for organic thin film transistors - Google Patents

Polymeric gate dielectrics for organic thin film transistors

Info

Publication number
TW200644305A
TW200644305A TW095110077A TW95110077A TW200644305A TW 200644305 A TW200644305 A TW 200644305A TW 095110077 A TW095110077 A TW 095110077A TW 95110077 A TW95110077 A TW 95110077A TW 200644305 A TW200644305 A TW 200644305A
Authority
TW
Taiwan
Prior art keywords
thin film
contact
dielectric layer
film transistors
organic thin
Prior art date
Application number
TW095110077A
Other languages
English (en)
Inventor
Zhihao Yang
Diane C Freeman
Amy E Jasek
Shelby F Nelson
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of TW200644305A publication Critical patent/TW200644305A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
TW095110077A 2005-03-24 2006-03-23 Polymeric gate dielectrics for organic thin film transistors TW200644305A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/088,645 US20060214154A1 (en) 2005-03-24 2005-03-24 Polymeric gate dielectrics for organic thin film transistors and methods of making the same

Publications (1)

Publication Number Publication Date
TW200644305A true TW200644305A (en) 2006-12-16

Family

ID=36698995

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095110077A TW200644305A (en) 2005-03-24 2006-03-23 Polymeric gate dielectrics for organic thin film transistors

Country Status (6)

Country Link
US (1) US20060214154A1 (zh)
EP (1) EP1878066A1 (zh)
JP (1) JP2008535218A (zh)
KR (1) KR20070122203A (zh)
TW (1) TW200644305A (zh)
WO (1) WO2006104665A1 (zh)

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US7863694B2 (en) * 2008-10-14 2011-01-04 Xerox Corporation Organic thin film transistors
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JP5429784B2 (ja) * 2009-02-06 2014-02-26 独立行政法人産業技術総合研究所 有機薄膜トランジスタ及びその製造方法
JP5630036B2 (ja) * 2009-05-07 2014-11-26 セイコーエプソン株式会社 有機トランジスター、有機トランジスターの製造方法、電気光学装置および電子機器
TWI384616B (zh) * 2009-09-11 2013-02-01 Univ Nat Cheng Kung 具備有機多介電層之記憶體元件
US20110097487A1 (en) 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including bonded plates
US20110097492A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold operating state management system
US20110097489A1 (en) 2009-10-27 2011-04-28 Kerr Roger S Distribution manifold including multiple fluid communication ports
US20110097488A1 (en) 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including mirrored finish plate
US20110097494A1 (en) 2009-10-27 2011-04-28 Kerr Roger S Fluid conveyance system including flexible retaining mechanism
US20110097490A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including compliant plates
US20110097493A1 (en) 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including non-parallel non-perpendicular slots
US20110097491A1 (en) 2009-10-27 2011-04-28 Levy David H Conveyance system including opposed fluid distribution manifolds
TWI398952B (zh) * 2009-11-19 2013-06-11 Ind Tech Res Inst 電晶體
CN102110713B (zh) * 2009-12-29 2013-08-07 财团法人工业技术研究院 晶体管
JP2012038924A (ja) * 2010-08-06 2012-02-23 Sony Corp 半導体装置、表示装置、および電子機器
JP5811522B2 (ja) * 2010-09-14 2015-11-11 株式会社リコー 薄膜トランジスタの製造方法
CN103403903B (zh) * 2010-10-07 2017-02-15 乔治亚州技术研究公司 场效应晶体管及其制造方法
WO2013131130A1 (en) * 2012-03-06 2013-09-12 Newcastle Innovation Limited Organic thin film transistors and the use thereof in sensing applications
JP2013219172A (ja) 2012-04-09 2013-10-24 Sony Corp 電子デバイス及びその製造方法並びに画像表示装置
KR102073763B1 (ko) 2012-06-27 2020-02-06 삼성디스플레이 주식회사 유기절연막 조성물, 유기절연막의 형성방법, 및 상기 유기절연막을 포함하는 유기박막트랜지스터
GB2534600A (en) * 2015-01-29 2016-08-03 Cambridge Display Tech Ltd Organic thin film transistors
KR101645176B1 (ko) * 2015-02-26 2016-08-04 재단법인 나노기반소프트일렉트로닉스연구단 다공성 유기 반도체 층을 갖는 적층체 및 그를 포함하는 화학센서
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CN114450812A (zh) * 2019-06-24 2022-05-06 弗莱克英纳宝有限公司 通过调节机械性能对电介质的应力响应和粘附行为的改变
CN113410385A (zh) * 2021-06-15 2021-09-17 南方科技大学 一种低压浮栅光电存储器及制备方法
CN114927615A (zh) * 2022-05-06 2022-08-19 华南师范大学 一种有机场效应晶体管及其制备方法
CN116096102A (zh) * 2023-03-17 2023-05-09 南京邮电大学 一种基于氟化电介质的双介电层有机场效应晶体管的制备方法

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JP4247377B2 (ja) * 2001-12-28 2009-04-02 独立行政法人産業技術総合研究所 薄膜トランジスタ及びその製造方法
CN1186822C (zh) * 2002-09-23 2005-01-26 中国科学院长春应用化学研究所 有机薄膜晶体管及制备方法
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Also Published As

Publication number Publication date
JP2008535218A (ja) 2008-08-28
WO2006104665A1 (en) 2006-10-05
EP1878066A1 (en) 2008-01-16
US20060214154A1 (en) 2006-09-28
KR20070122203A (ko) 2007-12-28

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