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WO2008117362A1 - 有機トランジスタ及びその製造方法 - Google Patents

有機トランジスタ及びその製造方法 Download PDF

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Publication number
WO2008117362A1
WO2008117362A1 PCT/JP2007/055965 JP2007055965W WO2008117362A1 WO 2008117362 A1 WO2008117362 A1 WO 2008117362A1 JP 2007055965 W JP2007055965 W JP 2007055965W WO 2008117362 A1 WO2008117362 A1 WO 2008117362A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic transistor
electrode
superimposed
insulating film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/055965
Other languages
English (en)
French (fr)
Inventor
Takashi Chuman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Priority to JP2009506080A priority Critical patent/JP4531850B2/ja
Priority to PCT/JP2007/055965 priority patent/WO2008117362A1/ja
Priority to US12/450,367 priority patent/US20100096621A1/en
Publication of WO2008117362A1 publication Critical patent/WO2008117362A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

【課題】高精細なパターニングを可能とし、良好な接触で、リーク電流を防止する有機トランジスタを提供する。 【解決手段】有機トランジスタは、基板１、基板１上に形成されたゲート電極２、ゲート電極２上に形成されたゲート絶縁層３、ゲート絶縁層３上に形成されたソース電極４とドレイン電極５、及びソース電極２とドレイン電極３間でゲート絶縁層３を介してゲート電極２に対向する有機半導体層６を有し、さらに、ペンタセン等の低分子系の有機半導体材料を用いて蒸着によって形成される前記有機半導体層６の形成領域を規定する開口部７ａを有する絶縁層７を備えている。
PCT/JP2007/055965 2007-03-23 2007-03-23 有機トランジスタ及びその製造方法 Ceased WO2008117362A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009506080A JP4531850B2 (ja) 2007-03-23 2007-03-23 有機トランジスタ及びその製造方法
PCT/JP2007/055965 WO2008117362A1 (ja) 2007-03-23 2007-03-23 有機トランジスタ及びその製造方法
US12/450,367 US20100096621A1 (en) 2007-03-23 2007-03-23 Organic transistor and manufacture method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055965 WO2008117362A1 (ja) 2007-03-23 2007-03-23 有機トランジスタ及びその製造方法

Publications (1)

Publication Number Publication Date
WO2008117362A1 true WO2008117362A1 (ja) 2008-10-02

Family

ID=39788107

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/055965 Ceased WO2008117362A1 (ja) 2007-03-23 2007-03-23 有機トランジスタ及びその製造方法

Country Status (3)

Country Link
US (1) US20100096621A1 (ja)
JP (1) JP4531850B2 (ja)
WO (1) WO2008117362A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019525465A (ja) * 2016-07-15 2019-09-05 ブルーワー サイエンス アイ エヌ シー． レーザーアブレーションの誘電性物質
CN111640800A (zh) * 2020-04-30 2020-09-08 中国科学院微电子研究所 一种半导体器件及其制备方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100054630A (ko) * 2008-11-14 2010-05-25 엘지디스플레이 주식회사 유기 박막 트랜지스터와 이의 제조방법 그리고 이를 이용한표시장치
US8211782B2 (en) 2009-10-23 2012-07-03 Palo Alto Research Center Incorporated Printed material constrained by well structures
DE102014102029A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
JP6546400B2 (ja) * 2015-02-05 2019-07-17 株式会社ジャパンディスプレイ 表示装置
JP6659283B2 (ja) * 2015-09-14 2020-03-04 株式会社東芝 半導体装置
CN105655257A (zh) * 2016-01-13 2016-06-08 深圳市华星光电技术有限公司 薄膜晶体管结构的制造方法
CN108493229A (zh) * 2018-05-31 2018-09-04 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
US12477893B2 (en) 2021-12-14 2025-11-18 Beijing Boe Technology Development Co., Ltd. Light emitting transistor, manufacturing method thereof and display substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208477A (ja) * 2000-11-10 2002-07-26 Semiconductor Energy Lab Co Ltd 発光装置
JP2005531131A (ja) * 2002-05-02 2005-10-13 スリーエム イノベイティブ プロパティズ カンパニー トランジスタの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269504A (ja) * 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
TW522577B (en) * 2000-11-10 2003-03-01 Semiconductor Energy Lab Light emitting device
US6821811B2 (en) * 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
CN100490180C (zh) * 2004-10-04 2009-05-20 松下电器产业株式会社 纵向场效应晶体管及其制造方法
US7800101B2 (en) * 2006-01-05 2010-09-21 Samsung Electronics Co., Ltd. Thin film transistor having openings formed therein
TWI300251B (en) * 2006-07-14 2008-08-21 Ind Tech Res Inst Manufacturing method of vertical thin film transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208477A (ja) * 2000-11-10 2002-07-26 Semiconductor Energy Lab Co Ltd 発光装置
JP2005531131A (ja) * 2002-05-02 2005-10-13 スリーエム イノベイティブ プロパティズ カンパニー トランジスタの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019525465A (ja) * 2016-07-15 2019-09-05 ブルーワー サイエンス アイ エヌ シー． レーザーアブレーションの誘電性物質
JP7356902B2 (ja) 2016-07-15 2023-10-05 ブルーワー サイエンス アイ エヌ シー． レーザーアブレーションの誘電性物質
CN111640800A (zh) * 2020-04-30 2020-09-08 中国科学院微电子研究所 一种半导体器件及其制备方法
CN111640800B (zh) * 2020-04-30 2023-04-11 中国科学院微电子研究所 一种半导体器件及其制备方法

Also Published As

Publication number Publication date
US20100096621A1 (en) 2010-04-22
JPWO2008117362A1 (ja) 2010-07-08
JP4531850B2 (ja) 2010-08-25

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