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TW200633599A - Atmospheric processing using microwave-generated plasmas - Google Patents

Atmospheric processing using microwave-generated plasmas

Info

Publication number
TW200633599A
TW200633599A TW094138629A TW94138629A TW200633599A TW 200633599 A TW200633599 A TW 200633599A TW 094138629 A TW094138629 A TW 094138629A TW 94138629 A TW94138629 A TW 94138629A TW 200633599 A TW200633599 A TW 200633599A
Authority
TW
Taiwan
Prior art keywords
parts
microwave
processing
microwave reactor
coupled
Prior art date
Application number
TW094138629A
Other languages
English (en)
Inventor
Satyendra Kumar
Devendra Kumar
Kuruvilla Cherian
Dougherty, Sr
Original Assignee
Dana Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dana Corp filed Critical Dana Corp
Publication of TW200633599A publication Critical patent/TW200633599A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/012—Soldering with the use of hot gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C23C8/38—Treatment of ferrous surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW094138629A 2004-11-05 2005-11-03 Atmospheric processing using microwave-generated plasmas TW200633599A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62550204P 2004-11-05 2004-11-05
US62543304P 2004-11-05 2004-11-05
US62523604P 2004-11-05 2004-11-05

Publications (1)

Publication Number Publication Date
TW200633599A true TW200633599A (en) 2006-09-16

Family

ID=37452496

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094138629A TW200633599A (en) 2004-11-05 2005-11-03 Atmospheric processing using microwave-generated plasmas

Country Status (4)

Country Link
US (1) US20080129208A1 (zh)
AR (1) AR051619A1 (zh)
TW (1) TW200633599A (zh)
WO (1) WO2006127037A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI448427B (zh) * 2012-02-08 2014-08-11 Nat Univ Tsing Hua 利用低頻電磁波製備石墨烯之方法

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US20120196453A1 (en) * 2011-02-01 2012-08-02 Arizona Board Of Regents For And On Behalf Of Arizona State University Systems and Methods for Susceptor Assisted Microwave Annealing
US20120213948A1 (en) * 2011-02-22 2012-08-23 General Electric Company Localized microwave system and method
RU2718715C1 (ru) * 2019-08-15 2020-04-14 Федеральное государственное бюджетное научное учреждение "Всероссийский научно-исследовательский институт радиологии и агроэкологии" (ФГБНУ ВНИИРАЭ) Свч-плазмотрон
US11124867B1 (en) 2020-03-13 2021-09-21 National Taiwan University Of Science And Technology Gradient material layer and method for manufacturing the same
US11692267B2 (en) * 2020-12-31 2023-07-04 Applied Materials, Inc. Plasma induced modification of silicon carbide surface

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI448427B (zh) * 2012-02-08 2014-08-11 Nat Univ Tsing Hua 利用低頻電磁波製備石墨烯之方法

Also Published As

Publication number Publication date
WO2006127037A3 (en) 2009-04-09
AR051619A1 (es) 2007-01-24
US20080129208A1 (en) 2008-06-05
WO2006127037A2 (en) 2006-11-30

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