[go: up one dir, main page]

TW200610200A - Positive electrode for semiconductor light-emitting device - Google Patents

Positive electrode for semiconductor light-emitting device

Info

Publication number
TW200610200A
TW200610200A TW094125783A TW94125783A TW200610200A TW 200610200 A TW200610200 A TW 200610200A TW 094125783 A TW094125783 A TW 094125783A TW 94125783 A TW94125783 A TW 94125783A TW 200610200 A TW200610200 A TW 200610200A
Authority
TW
Taiwan
Prior art keywords
positive electrode
emitting device
semiconductor light
electrode
transparent
Prior art date
Application number
TW094125783A
Other languages
Chinese (zh)
Other versions
TWI275190B (en
Inventor
Hisayuki Miki
Noritaka Muraki
Munetaka Watanabe
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200610200A publication Critical patent/TW200610200A/en
Application granted granted Critical
Publication of TWI275190B publication Critical patent/TWI275190B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Led Devices (AREA)

Abstract

An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bonding pad electrode has a reflecting layer that is in contact with at least the transparent electrode.
TW94125783A 2004-07-29 2005-07-29 Positive electrode for semiconductor light-emitting device TWI275190B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004222336 2004-07-29

Publications (2)

Publication Number Publication Date
TW200610200A true TW200610200A (en) 2006-03-16
TWI275190B TWI275190B (en) 2007-03-01

Family

ID=38176830

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94125783A TWI275190B (en) 2004-07-29 2005-07-29 Positive electrode for semiconductor light-emitting device

Country Status (4)

Country Link
JP (4) JP2009033210A (en)
KR (1) KR100895452B1 (en)
CN (1) CN100590898C (en)
TW (1) TWI275190B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8273592B2 (en) 2006-12-20 2012-09-25 Showa Denko K.K. Method of manufacturing group-III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp
US8624288B2 (en) 2006-06-23 2014-01-07 Lg Electronics, Inc. Light emitting diode having vertical topology and method of making the same
TWI702736B (en) * 2012-11-02 2020-08-21 晶元光電股份有限公司 Light emitting device

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101971368A (en) * 2008-03-13 2011-02-09 昭和电工株式会社 Semiconductor light emitting element and manufacturing method thereof
USPP22761P2 (en) 2010-04-23 2012-05-29 Spring Meadow Nursery, Inc. Potentilla plant named ‘White Lady’
CN102124574B (en) * 2008-06-16 2013-07-17 丰田合成株式会社 Semiconductor light emitting element, electrode and manufacturing method for the element, and lamp
KR100986518B1 (en) * 2008-06-16 2010-10-07 엘지이노텍 주식회사 Semiconductor light emitting device
US8716723B2 (en) 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
WO2010071113A1 (en) 2008-12-15 2010-06-24 昭和電工株式会社 Semiconductor light emission element
JP5350833B2 (en) 2009-02-20 2013-11-27 株式会社東芝 Semiconductor light emitting device, semiconductor light emitting device, and method for manufacturing semiconductor light emitting device
EP2416387A4 (en) 2009-04-02 2012-12-12 Panasonic Corp NITRIDE SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREOF
CN101859838B (en) * 2009-04-07 2014-09-10 裕星企业有限公司 Light-emitting diode structure
KR101081166B1 (en) 2009-09-23 2011-11-07 엘지이노텍 주식회사 Light emitting device, method for fabricating the same and light emitting device package
KR101103892B1 (en) * 2009-12-08 2012-01-12 엘지이노텍 주식회사 Light emitting device and light emitting device package
JP4909448B2 (en) * 2010-04-01 2012-04-04 パナソニック株式会社 Nitride-based semiconductor device and manufacturing method thereof
CN101846256A (en) * 2010-05-04 2010-09-29 蔡州 LED light source
CN102810613B (en) * 2011-05-30 2016-04-13 比亚迪股份有限公司 Current spread electrode, light emitting semiconductor device and preparation method thereof
JP6077201B2 (en) * 2011-08-11 2017-02-08 昭和電工株式会社 Light emitting diode and manufacturing method thereof
JP5639626B2 (en) * 2012-01-13 2014-12-10 シャープ株式会社 Semiconductor light emitting device and electrode film forming method
JP5888132B2 (en) * 2012-06-08 2016-03-16 豊田合成株式会社 Method for manufacturing light emitting device
TWI514628B (en) 2013-10-24 2015-12-21 Lextar Electronics Corp Electrode structure and light emitting diode structure with electrode structure
KR101561198B1 (en) * 2013-11-12 2015-10-19 주식회사 세미콘라이트 Semiconductor light emitting device
KR101628244B1 (en) * 2014-02-11 2016-06-21 주식회사 세미콘라이트 Semiconductor light emitting device
CN104409601A (en) * 2014-11-05 2015-03-11 扬州中科半导体照明有限公司 Flip light-emitting diode chip with double reflection layers
CN107123594B (en) * 2017-05-10 2019-11-26 湘能华磊光电股份有限公司 LED electrode production method, LED electrode and LED chip
KR102622753B1 (en) 2020-02-17 2024-01-10 삼성에스디아이 주식회사 Laser welding method and monitoring method for secondary battery
CN112289900B (en) * 2020-09-16 2021-10-08 华灿光电(苏州）有限公司 Ultraviolet light emitting diode epitaxial wafer and preparation method thereof
CN116364827B (en) * 2023-05-29 2023-08-29 江西兆驰半导体有限公司 Mini LED and preparation method thereof

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2566207Y2 (en) * 1992-10-21 1998-03-25 日亜化学工業株式会社 Gallium nitride based light emitting device with current injection
JP3717196B2 (en) * 1994-07-19 2005-11-16 豊田合成株式会社 Light emitting element
JP3468644B2 (en) * 1996-10-22 2003-11-17 豊田合成株式会社 Group III nitride semiconductor light emitting device
JP4118370B2 (en) * 1997-12-15 2008-07-16 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Nitride semiconductor light-emitting device having reflective p-electrode, method for manufacturing the same, and semiconductor optoelectronic device
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
JP3068914U (en) * 1999-11-11 2000-05-26 洲磊科技股▲ふん▼有限公司 Flip-chip light emitting device
JP3665243B2 (en) * 1999-11-19 2005-06-29 日亜化学工業株式会社 Nitride semiconductor device and manufacturing method thereof
JP2001217456A (en) * 2000-02-03 2001-08-10 Sharp Corp Gallium nitride based compound semiconductor light emitting device
JP3505643B2 (en) * 2000-04-19 2004-03-08 星和電機株式会社 Gallium nitride based semiconductor light emitting device
JP4024994B2 (en) * 2000-06-30 2007-12-19 株式会社東芝 Semiconductor light emitting device
CN1147010C (en) * 2000-11-16 2004-04-21 中国科学院半导体研究所 Self-passinvating non-planar junction subgroup III nitride semi-conductor device and its making method
KR100413435B1 (en) * 2001-04-02 2003-12-31 엘지전자 주식회사 Light Emitting Diode and Fabrication Method for the same
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US7148520B2 (en) * 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
JP2003160785A (en) * 2001-11-27 2003-06-06 Toshiba Corp Red light emitting phosphor and light emitting device using the same
JP2003163375A (en) * 2001-11-29 2003-06-06 Sanyo Electric Co Ltd Nitride semiconductor element and its manufacturing method
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
JP2004179347A (en) * 2002-11-26 2004-06-24 Matsushita Electric Works Ltd Semiconductor light emitting element
JP2004193270A (en) * 2002-12-10 2004-07-08 Sharp Corp Oxide semiconductor light emitting device
JP2003347586A (en) * 2003-07-08 2003-12-05 Toshiba Corp Semiconductor light emitting device
KR100580634B1 (en) * 2003-12-24 2006-05-16 삼성전자주식회사 Nitride-based light emitting device and its manufacturing method
JP2005259970A (en) * 2004-03-11 2005-09-22 Nichia Chem Ind Ltd Semiconductor light emitting device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8624288B2 (en) 2006-06-23 2014-01-07 Lg Electronics, Inc. Light emitting diode having vertical topology and method of making the same
TWI455345B (en) * 2006-06-23 2014-10-01 Lg Electronics Inc Light-emitting diode having vertical structure and manufacturing method thereof
US9530936B2 (en) 2006-06-23 2016-12-27 Lg Electronics Inc. Light emitting diode having vertical topology and method of making the same
US8273592B2 (en) 2006-12-20 2012-09-25 Showa Denko K.K. Method of manufacturing group-III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp
TWI702736B (en) * 2012-11-02 2020-08-21 晶元光電股份有限公司 Light emitting device
US10847682B2 (en) 2012-11-02 2020-11-24 Epistar Corporation Electrode structure of light emitting device
US11437547B2 (en) 2012-11-02 2022-09-06 Epistar Corporation Electrode structure of light emitting device
US11677046B2 (en) 2012-11-02 2023-06-13 Epistar Corporation Electrode structure of light emitting device

Also Published As

Publication number Publication date
JP2009033213A (en) 2009-02-12
KR100895452B1 (en) 2009-05-07
TWI275190B (en) 2007-03-01
JP2011066461A (en) 2011-03-31
KR20070041506A (en) 2007-04-18
CN100590898C (en) 2010-02-17
CN1993837A (en) 2007-07-04
JP5533675B2 (en) 2014-06-25
JP2009065196A (en) 2009-03-26
JP2009033210A (en) 2009-02-12

Similar Documents

Publication Publication Date Title
TW200610200A (en) Positive electrode for semiconductor light-emitting device
TW200620705A (en) Semiconductor light emitting device
EP2523230A3 (en) Light emitting device package and ultraviolet lamp having the same
MY159231A (en) Light emitting diodes with smooth surface for reflective electrode
EP2339656A3 (en) Light emitting device
TW200739958A (en) Light emitting diode, method for manufacturing light emitting diode, integrated light emitting diode, method for manufacturing integrated light emitting diode, light emitting diode backlight, light emitting diode illumination device
EP1515369A3 (en) Light-emitting device substrate and light-emitting device using the same
TW200717757A (en) Light emitting diode package structure
TW200629584A (en) Light emitting device and manufacture method thereof
TW200729559A (en) High luminance light emitting diode and liquid crystal display device using the same
TW200703724A (en) Luminescence diode chip with a contact structure
TW200717885A (en) Light emitting apparatus
TW200504183A (en) Metal complex compound and organic electroluminescent device using same
EP2224466A3 (en) High power AllnGaN based multi-chip light emitting diode
TW200739968A (en) Light-emitting diode
TW200721906A (en) Area light emitting device
TW200742115A (en) Package module of light emitting diode
WO2011055202A3 (en) Light emitting diode device
TW200501802A (en) Planar luminescent device including auxiliary electrode
EP2428991A3 (en) Light Emitting Component with integrated control
TW200629590A (en) Light emitting diode and method of the same
TW200739935A (en) Semiconductor light emitting device and method of fabricating the same
TW200701508A (en) A semiconductor light-emitting device
JP2005123501A5 (en)
TW200735424A (en) Light emitting device having vertical structure and method for manufacturing the same

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent