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USPP22761P2 - Potentilla plant named ‘White Lady’ - Google Patents

Potentilla plant named ‘White Lady’ Download PDF

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Publication number
USPP22761P2
USPP22761P2 US12/799,431 US79943110V USPP22761P2 US PP22761 P2 USPP22761 P2 US PP22761P2 US 79943110 V US79943110 V US 79943110V US PP22761 P2 USPP22761 P2 US PP22761P2
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Prior art keywords
potentilla
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plant
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US12/799,431
Inventor
Pieter Kolster
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Spring Meadow Nursery Inc
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Spring Meadow Nursery Inc
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Priority to US12/799,431 priority Critical patent/USPP22761P2/en
Assigned to SPRING MEADOW NURSERY, INC. reassignment SPRING MEADOW NURSERY, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOLSTER, PIETER
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Publication of USPP22761P2 publication Critical patent/USPP22761P2/en
Priority to US13/759,291 priority patent/US9257613B2/en
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    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01H—NEW PLANTS OR NON-TRANSGENIC PROCESSES FOR OBTAINING THEM; PLANT REPRODUCTION BY TISSUE CULTURE TECHNIQUES
    • A01H5/00—Angiosperms, i.e. flowering plants, characterised by their plant parts; Angiosperms characterised otherwise than by their botanic taxonomy
    • A01H5/02—Flowers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • Botanical designation Potentilla fruticosa.
  • the present invention relates to a new and distinct cultivar of Potentilla plant, botanically known as Potentilla fruticosa , and hereinafter referred to by the name ‘White Lady’.
  • the new Potentilla plant is a product of a planned breeding program conducted by the Inventor in Boskoop, The Netherlands.
  • the objective of the breeding program was to develop new long-flowering Potentilla plants with attractive flower color.
  • the new Potentilla plant originated from a self-pollination in July, 2004 of Potentilla fruticosa ‘Abbotswood’, not patented.
  • the new Potentilla plant was discovered and selected by the Inventor in August, 2005 as a flowering plant within the progeny of the stated self-pollination in a controlled environment in Boskoop, The Netherlands.
  • Plants of the new Potentilla have been observed under all possible cultural and environmental conditions.
  • the phenotype may vary somewhat with variations in cultural practices and environment such as temperature and light intensity without, however, any variance in genotype.
  • Plants of the new Potentilla can be compared to plants of the parent, ‘Abbotswood’. Plants of the new Potentilla differ primarily from plants of ‘Abbotswood’ in the following characteristics:
  • Plants of the new Potentilla can be compared to plants of Potentilla fruticosa ‘Red Lady’, disclosed in a U.S. Plant patent application Ser. No. 12/799,431. Plants of the new Potentilla differ primarily from plants of ‘Red Lady’ in flower color as plants of ‘Red Lady’ have red-colored flowers.
  • the photograph on the first sheet comprises a side perspective view of a typical flowering plant of ‘White Lady’ grown in a container.
  • the photograph at the top of the second sheet is a close-up view of typical leaves and stems of ‘White Lady’.
  • the photograph at the bottom of the second sheet is a close-up view of typical flowering stems of ‘White Lady’.

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  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physiology (AREA)
  • Botany (AREA)
  • Developmental Biology & Embryology (AREA)
  • Environmental Sciences (AREA)
  • Led Devices (AREA)
  • Breeding Of Plants And Reproduction By Means Of Culturing (AREA)

Abstract

A new and distinct cultivar of Potentilla plant named ‘White Lady’, characterized by its upright and outwardly spreading plant habit; freely branching habit; large white-colored flowers; long flowering period; and good garden performance.

Description

Botanical designation: Potentilla fruticosa.
Cultivar denomination: ‘WHITE LADY’.
BACKGROUND OF THE INVENTION
The present invention relates to a new and distinct cultivar of Potentilla plant, botanically known as Potentilla fruticosa, and hereinafter referred to by the name ‘White Lady’.
The new Potentilla plant is a product of a planned breeding program conducted by the Inventor in Boskoop, The Netherlands. The objective of the breeding program was to develop new long-flowering Potentilla plants with attractive flower color.
The new Potentilla plant originated from a self-pollination in July, 2004 of Potentilla fruticosa ‘Abbotswood’, not patented. The new Potentilla plant was discovered and selected by the Inventor in August, 2005 as a flowering plant within the progeny of the stated self-pollination in a controlled environment in Boskoop, The Netherlands.
Asexual reproduction of the new Potentilla plant by vegetative cuttings in a controlled environment in Boijl, The Netherlands since June, 2006, has shown that the unique features of this new Potentilla plant are stable and reproduced true to type in successive generations.
SUMMARY OF THE INVENTION
Plants of the new Potentilla have been observed under all possible cultural and environmental conditions. The phenotype may vary somewhat with variations in cultural practices and environment such as temperature and light intensity without, however, any variance in genotype.
The following traits have been repeatedly observed and are determined to be the unique characteristics of ‘White Lady’. These characteristics in combination distinguish ‘White Lady’ as a new and distinct Potentilla plant:
    • 1. Upright and outwardly spreading plant habit.
    • 2. Freely branching habit.
    • 3. Large white-colored flowers.
    • 4. Long flowering period.
    • 5. Good garden performance.
Plants of the new Potentilla can be compared to plants of the parent, ‘Abbotswood’. Plants of the new Potentilla differ primarily from plants of ‘Abbotswood’ in the following characteristics:
    • 1. Plants of the new Potentilla are more compact than plants of ‘Abbotswood’.
    • 2. Leaves of plants of the new Potentilla are pubescent whereas leaves of plants of ‘Abbotswood’ are glabrous.
    • 3. In The Netherlands, plants of the new Potentilla flower until November whereas plants of ‘Abbotswood’ flower until mid-September.
Plants of the new Potentilla can be compared to plants of Potentilla fruticosa ‘Red Lady’, disclosed in a U.S. Plant patent application Ser. No. 12/799,431. Plants of the new Potentilla differ primarily from plants of ‘Red Lady’ in flower color as plants of ‘Red Lady’ have red-colored flowers.
BRIEF DESCRIPTION OF THE PHOTOGRAPHS
The accompanying colored photographs illustrate the overall appearance of the new Potentilla plant, showing the colors as true as it is reasonably possible to obtain in colored reproductions of this type. Colors in the photographs may differ slightly from the color values cited in the detailed botanical description which accurately describe the colors of the new Potentilla plant.
The photograph on the first sheet comprises a side perspective view of a typical flowering plant of ‘White Lady’ grown in a container.
The photograph at the top of the second sheet is a close-up view of typical leaves and stems of ‘White Lady’.
The photograph at the bottom of the second sheet is a close-up view of typical flowering stems of ‘White Lady’.
 DETAILED BOTANICAL DESCRIPTION
The aforementioned photographs and following observations, measurements and values describe plants grown in two-liter containers during the autumn in an outdoor nursery in Boskoop, The Netherlands and under conditions which closely approximate commercial Potentilla production. During the production of the plants, day temperatures ranged from 8° C. to 18° C. and night temperatures ranged from 1° C. to 12° C. Plants were two years old when the photographs and the description were taken. In the description, color references are made to The Royal Horticultural Society Colour Chart, 2007 Edition, except where general terms of ordinary dictionary significance are used.
  • Botanical classification: Potentilla fruticosa ‘White Lady’.
  • Parentage: Self-pollination of Potentilla fruticosa ‘Abbotswood’, not patented.
  • Propagation:
      • Type.—By vegetative cuttings.
      • Time to initiate roots.—About 14 days at 20° C.
      • Time to develop roots.—About 40 days at 20° C.
      • Root description.—Fine, fibrous; brown in color.
      • Rooting habit.—Freely branching.
  • Plant description:
      • Plant form and growth habit.—Perennial deciduous shrub; upright and outwardly spreading plant habit, roughly globular in shape; moderately vigorous growth habit.
      • Branching habit.—Freely branching habit, usually about 21 lateral branches develop per plant; pinching enhances lateral branch development.
      • Plant height.—About 29.6 cm.
      • Plant diameter (area of spread).—About 40.3 cm.
  • Lateral branch description:
      • Length.—About 12.6 cm.
      • Diameter.—About 1.2 mm.
      • Internode length.—About 1.4 cm.
      • Strength.—Strong.
      • Texture.—Pubescent, rough; woody with development.
      • Color, developing.—Close to 181A to 181B.
      • Color, woody.—Between 174A and 177A.
  • Foliage description:
      • Arrangement.—Alternate; palmately compound with three leaflets per leaf; leaflets sessile.
      • Leaf length.—About 2.9 cm.
      • Leaf width.—About 3.3 cm.
      • Leaflet length.—About 1.9 cm.
      • Leaflet width.—About 1.4 cm.
      • Leaflet shape.—Narrowly obovate to elliptic.
      • Leaflet apex.—Short apiculate.
      • Leaflet base.—Attenuate.
      • Leaflet margin.—Entire.
      • Leaflet texture, upper and lower surfaces.—Sparsely pubescent.
      • Leaflet venation pattern.—Pinnate.
      • Leaflet color.—Developing leaves, upper surface: Close to N137C. Developing leaves, lower surface: Close to 138B. Mature leaves, upper surface: Close to 137A; venation, close to N137B. Mature leaves, lower surface: Close to 148C; venation, close to 148C to 148D.
      • Leaf petiole.—Length: About 1.2 cm. Diameter: About 0.75 mm. Texture, upper and lower surfaces: Smooth, glabrous. Color, upper and lower surfaces: Close to 144B to 144C.
  • Flower description:
      • Flower arrangement, shape and habit.—Single rotate flowers, flowers usually terminal and sometimes in pairs; flowers face upright; freely flowering habit, about six flowers and flower buds per lateral branch.
      • Fragrance.—None detected.
      • Natural flowering season.—Plants begin flowering about 7.5 months after planting and flower from the late spring into the late autumn in The Netherlands.
      • Flower longevity on the plant.—About five days; flowers not persistent.
      • Flower buds.—Length: About 8 mm. Diameter: About 5 mm. Shape: Ovate. Color: Close to 150B; apex, close to 144A.
      • Flowers.—Diameter: About 3.1 cm. Depth (height): About 9 mm.
      • Petals.—Arrangement: Five in a single whorl. Length: About 1.4 cm. Width: About 1.3 cm. Shape: Orbicular; slightly concave. Apex: Obtuse. Base: Attenuate. Margin: Entire. Texture, upper and lower surfaces: Smooth, glabrous. Color: When opening, upper and lower surfaces: Close to NN155B. Fully opened, upper and lower surfaces: Close to NN155B.
      • Petaloids.—None observed.
      • Sepals.—Arrangement: Five in a single whorl. Length: About 8 mm. Width: About 3 mm. Shape: Ovate. Apex: Acute. Base: Broadly cuneate. Margin: Entire. Texture, upper and lower surfaces: Smooth, glabrous. Color: Immature and mature, upper surface: Close to 150B; apex, close to 144A. Immature and mature, lower surface: Close to 145A; apex, close to 144A.
      • Pedicels.—Strength: Moderately strong. Length: About 2.5 cm. Diameter: About 1 mm. Aspect: Erect. Texture: Smooth, glabrous. Color: Close to 145B.
      • Reproductive organs.—Stamens: Quantity per flower: About 30. Filament length: About 2 mm. Anther size: About 1 mm by 0.5 mm. Anther shape: Ovate. Anther color: Close to 10C. Pollen amount: Scarce. Pollen color: Close to 14A. Pistils: Quantity per flower: About 30. Pistil length: About 2 mm. Stigma color: Close to 3A. Style length: About 1 mm. Style color: Close to 3B to 3C. Ovary color: Close to 144B to 144C.
  • Temperature tolerance: Plants of the new Potentilla have been observed to be hardy to USDA Hardiness Zone 3 and to tolerate high temperatures of about 40° C.
  • Pathogen/pest resistance: Plants of the new Potentilla have not been shown to be resistant to pathogens and pests common to Potentilla.

Claims (1)

1. A new and distinct Potentilla plant named ‘White Lady’ as illustrated and described.
US12/799,431 2008-06-16 2010-04-23 Potentilla plant named ‘White Lady’ Active 2030-11-04 USPP22761P2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/799,431 USPP22761P2 (en) 2010-04-23 2010-04-23 Potentilla plant named ‘White Lady’
US13/759,291 US9257613B2 (en) 2008-06-16 2013-02-05 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/799,431 USPP22761P2 (en) 2010-04-23 2010-04-23 Potentilla plant named ‘White Lady’

Publications (1)

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USPP22761P2 true USPP22761P2 (en) 2012-05-29

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US13/759,291 Expired - Fee Related US9257613B2 (en) 2008-06-16 2013-02-05 Semiconductor light emitting device

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JP2015061068A (en) * 2013-09-20 2015-03-30 東芝ライテック株式会社 Light emitting module and lighting device
JP2015061063A (en) * 2013-09-20 2015-03-30 東芝ライテック株式会社 Light-emitting module and lighting device
TWI514628B (en) * 2013-10-24 2015-12-21 Lextar Electronics Corp Electrode structure and light emitting diode structure with electrode structure
US9634194B2 (en) * 2014-03-07 2017-04-25 Lextar Electronics Corporation Light-emitting diode chip
JP6039026B1 (en) * 2015-09-04 2016-12-07 Ｄｏｗａエレクトロニクス株式会社 Manufacturing method of n-type ohmic electrode, n-type ohmic electrode, n-type electrode, and group III nitride semiconductor light emitting device

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Also Published As

Publication number Publication date
US9257613B2 (en) 2016-02-09
US20130146922A1 (en) 2013-06-13

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AS Assignment

Owner name: SPRING MEADOW NURSERY, INC., MICHIGAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KOLSTER, PIETER;REEL/FRAME:025152/0530

Effective date: 20100428