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TW200600455A - Composition for polishing - Google Patents

Composition for polishing

Info

Publication number
TW200600455A
TW200600455A TW094116347A TW94116347A TW200600455A TW 200600455 A TW200600455 A TW 200600455A TW 094116347 A TW094116347 A TW 094116347A TW 94116347 A TW94116347 A TW 94116347A TW 200600455 A TW200600455 A TW 200600455A
Authority
TW
Taiwan
Prior art keywords
ingredient
burning
cerium oxide
polishing
cerium
Prior art date
Application number
TW094116347A
Other languages
English (en)
Inventor
Isao Ota
Kenji Tanimoto
Noriyuki Takakuma
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200600455A publication Critical patent/TW200600455A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW094116347A 2004-05-19 2005-05-19 Composition for polishing TW200600455A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004148819 2004-05-19

Publications (1)

Publication Number Publication Date
TW200600455A true TW200600455A (en) 2006-01-01

Family

ID=35394036

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116347A TW200600455A (en) 2004-05-19 2005-05-19 Composition for polishing

Country Status (7)

Country Link
US (1) US20070240366A1 (zh)
EP (1) EP1747849A1 (zh)
JP (1) JPWO2005110679A1 (zh)
KR (1) KR20070033360A (zh)
CN (1) CN100503167C (zh)
TW (1) TW200600455A (zh)
WO (1) WO2005110679A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613269B (zh) * 2015-10-02 2018-02-01 三星Ｓｄｉ股份有限公司 用於有機膜的cmp漿料組成物及使用其的研磨方法

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* Cited by examiner, † Cited by third party
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JP4951218B2 (ja) * 2004-07-15 2012-06-13 三星電子株式会社 酸化セリウム研磨粒子及び該研磨粒子を含む組成物
KR100574984B1 (ko) * 2004-08-16 2006-05-02 삼성전자주식회사 산화세륨 연마 입자 및 그 제조 방법과 ｃｍｐ용 슬러리조성물 및 그 제조 방법과 이들을 이용한 기판 연마 방법
TWI323741B (en) * 2004-12-16 2010-04-21 K C Tech Co Ltd Abrasive particles, polishing slurry, and producing method thereof
KR100641348B1 (ko) * 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
CN101375376B (zh) * 2006-01-31 2012-09-19 日立化成工业株式会社 绝缘膜研磨用cmp研磨剂、研磨方法、通过该研磨方法研磨的半导体电子部件
US8491682B2 (en) * 2007-12-31 2013-07-23 K.C. Tech Co., Ltd. Abrasive particles, method of manufacturing the abrasive particles, and method of manufacturing chemical mechanical polishing slurry
CN101977873A (zh) * 2008-02-12 2011-02-16 圣戈本陶瓷及塑料股份有限公司 二氧化铈及其形成方法
JP5965906B2 (ja) * 2010-09-08 2016-08-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法
WO2013067696A1 (en) * 2011-11-09 2013-05-16 Rhodia (China) Co., Ltd. Additive mixture and composition and method for polishing glass substrates
FR2997605B1 (fr) * 2012-11-08 2015-12-11 Rhodia Operations Suspensions aqueuses pour compositions agricoles
JP5897200B2 (ja) * 2013-02-13 2016-03-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨物製造方法
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
CN104673101A (zh) * 2015-02-12 2015-06-03 柳州豪祥特科技有限公司 一种稀土抛光粉的制备工艺
CN109155246B (zh) * 2016-04-22 2024-01-05 日挥触媒化成株式会社 二氧化硅系复合微粒分散液及其制造方法
CN112778970B (zh) * 2021-01-04 2022-05-10 上海晖研材料科技有限公司 一种制备表面改性的氧化铈颗粒及含其的抛光液的方法
CN112778911B (zh) * 2021-01-04 2022-08-23 上海晖研材料科技有限公司 一种表面改性的氧化铈颗粒作为抛光液磨粒的应用
KR102677799B1 (ko) * 2021-04-30 2024-06-24 주식회사 케이씨텍 연마 슬러리 조성물
JP7750295B2 (ja) * 2021-08-31 2025-10-07 株式会社レゾナック 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
WO2023032028A1 (ja) * 2021-08-31 2023-03-09 株式会社レゾナック 研磨液、研磨方法、半導体部品の製造方法、及び、接合体の製造方法
CN120209711A (zh) * 2023-12-27 2025-06-27 昂士特科技(深圳)有限公司 一种电化学机械抛光组合物、用途及方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3278532B2 (ja) * 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
JP2000186276A (ja) * 1998-12-22 2000-07-04 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP4491857B2 (ja) * 1999-06-18 2010-06-30 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
JP2001093866A (ja) * 1999-09-20 2001-04-06 Speedfam Co Ltd 酸化物単結晶ウェーハ加工用研磨用組成物及び酸化物単結晶ウェーハの研磨方法
TWI272249B (en) * 2001-02-27 2007-02-01 Nissan Chemical Ind Ltd Crystalline ceric oxide sol and process for producing the same
JP4117448B2 (ja) * 2001-02-27 2008-07-16 日産化学工業株式会社 結晶性酸化第二セリウムゾル及びその製造方法
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
JP2003261861A (ja) * 2002-03-07 2003-09-19 Mitsui Mining & Smelting Co Ltd セリウム系研摩材及びセリウム系研摩材の分散性評価方法
JP4471072B2 (ja) * 2002-07-04 2010-06-02 日産化学工業株式会社 ボールミル装置を用いた酸化セリウムの粉砕方法
KR101068068B1 (ko) * 2002-07-22 2011-09-28 아사히 가라스 가부시키가이샤 반도체용 연마제, 그 제조 방법 및 연마 방법
JP4273921B2 (ja) * 2002-10-28 2009-06-03 日産化学工業株式会社 酸化セリウム粒子及び加湿焼成による製造方法
JP4273920B2 (ja) * 2002-10-28 2009-06-03 日産化学工業株式会社 酸化セリウム粒子及び多段階焼成による製造方法
JP2005179421A (ja) * 2003-12-17 2005-07-07 Nissan Chem Ind Ltd 研磨用組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613269B (zh) * 2015-10-02 2018-02-01 三星Ｓｄｉ股份有限公司 用於有機膜的cmp漿料組成物及使用其的研磨方法

Also Published As

Publication number Publication date
KR20070033360A (ko) 2007-03-26
EP1747849A1 (en) 2007-01-31
JPWO2005110679A1 (ja) 2008-03-21
WO2005110679A1 (ja) 2005-11-24
US20070240366A1 (en) 2007-10-18
CN1953842A (zh) 2007-04-25
CN100503167C (zh) 2009-06-24

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