SU411037A1 - Способ получения искусственных алмазов - Google Patents
Способ получения искусственных алмазовInfo
- Publication number
- SU411037A1 SU411037A1 SU1708806A SU1708806A SU411037A1 SU 411037 A1 SU411037 A1 SU 411037A1 SU 1708806 A SU1708806 A SU 1708806A SU 1708806 A SU1708806 A SU 1708806A SU 411037 A1 SU411037 A1 SU 411037A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- artificial diamonds
- obtaining artificial
- diamonds
- graphite
- artificial diamond
- Prior art date
Links
- 239000010432 diamond Substances 0.000 title description 11
- 238000000034 method Methods 0.000 title description 11
- 238000000576 coating method Methods 0.000 description 9
- 229910003460 diamond Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
- C23C14/0611—Diamond
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/26—Preparation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
1
Изобретение относитс к способам получени искусственных алмазов из графита.
Известен способ получени алмазов из углеродсодержащего вещества на затравку в вакууме путем осаждени ионов в электрическом поле со скоростью, обеспечивающей при соударении давление не менее 6-10 кг/см.
Однако при этом способе необходимо затравочный кристалл и невозможно получение покрытий из искусственного алмаза на других веществах.
Дл упрощени процесса и получени покрытий из искусственного алмаза предлагаетс использовать катодное распыление графита в магнитном поле при низком давлении инертного газа - криптона тор и низкой температуре (меньше 100°К) с осаждением нейтральных атомов углерода на любую твердую охлаждаемую подложку из нескольких источников распылени .
Пример. Дл получени покрыти , пленки из искусственного алмаза на меди берут подложку из листовой меди размером 10Х Х18 мм и толщиной 0,5 мм. В качестве материала катодов используют чистый графит и подвергают его катодному распылению при следующих услови х: давление инертного газа-крептона 10- тор; парциальное давление водорода меньше тор; парциальные давлени азота, кислорода и паров воды меньше 10-1° тор; напр жение между анодом и катодом 4 KB; ток разр да 4 ма; напр женпость магнитного пол 700 эрст; температура стенок реакторной камеры около 78°К (температура жидкого азота); количество катодов 2 шт. При указанных услови х на меди образуетс покрытие, пленка из искусственного алмаза со скоростью 5 а/мин. Предлагаемый способ обеспечивает получение покрытий из искусственного алмаза типа «карбонадо практически на любой твердой подложке. Возможно изготовление многослойных покрытий типа «сэндвич, а также свободных пленок. Способ может найти применение в микрорадиоэлектронике, сверхпровод щей технике, технике защиты металлов от агрессивной среды, ювелирной промышлеппости , электронной микроскопии.
20
Предмет изобретени
1. Способ получени искусственных алмазов из графита в вакууме с использованием
электрического пол , отличающийс тем, что, с целью упрощени процесса и получени покрытий из искусственного алмаза, процесс ведут с использованием катодного распылени графита в магнитном поле при давлении
инертного газа 10 -10 тор с осаледением 3 нейтральных атомов углерода на охлаждаемую твердую подложку по крайней мере из двух источников распылени . 2. Способ по п. 1, отличающийс тем, что, с целью улучщени качества алмазного5 покрыти , например увеличени его удельного. 4 электросонротивлени , процесс ведут в охлаждаемой реакторной камере при температуре подложки ниже 100°К. 3. Способ по п. 1, отличающийс тем, что в качестве нейтральной и инертной среды используют криптон.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1708806A SU411037A1 (ru) | 1971-10-28 | 1971-10-28 | Способ получения искусственных алмазов |
| CH1531672A CH582622A5 (ru) | 1971-10-28 | 1972-10-20 | |
| GB4865772A GB1396987A (en) | 1971-10-28 | 1972-10-23 | Method of producing artificial diamonds |
| US00300350A US3840451A (en) | 1971-10-28 | 1972-10-24 | Method of producing an artificial diamond film |
| DE2252343A DE2252343C3 (de) | 1971-10-28 | 1972-10-25 | Verfahren zur Herstellung von künstlichen Diamanten |
| FR7237850A FR2157957B1 (ru) | 1971-10-28 | 1972-10-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1708806A SU411037A1 (ru) | 1971-10-28 | 1971-10-28 | Способ получения искусственных алмазов |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU411037A1 true SU411037A1 (ru) | 1974-08-05 |
Family
ID=20491295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU1708806A SU411037A1 (ru) | 1971-10-28 | 1971-10-28 | Способ получения искусственных алмазов |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3840451A (ru) |
| CH (1) | CH582622A5 (ru) |
| DE (1) | DE2252343C3 (ru) |
| FR (1) | FR2157957B1 (ru) |
| GB (1) | GB1396987A (ru) |
| SU (1) | SU411037A1 (ru) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2560380C1 (ru) * | 2014-07-18 | 2015-08-20 | Федеральное Государственное Автономное Образовательное Учреждение Высшего Профессионального Образования "Сибирский Федеральный Университет" | Способ получения искусственных алмазов из графита |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4049533A (en) * | 1975-09-10 | 1977-09-20 | Golyanov Vyacheslav Mikhailovi | Device for producing coatings by means of ion sputtering |
| FR2393605A1 (fr) * | 1977-06-09 | 1979-01-05 | Nat Res Dev | Procede de croissance de cristaux de diamant |
| DE3172609D1 (en) * | 1980-08-21 | 1985-11-14 | Nat Res Dev | Coating infra red transparent semiconductor material |
| JPS58221275A (ja) * | 1982-06-16 | 1983-12-22 | Anelva Corp | スパツタリング装置 |
| DE3205919C1 (de) * | 1982-02-19 | 1983-07-21 | Freudenberg, Carl, 6940 Weinheim | Verfahren zur Herstellung von Festelektrolytschichten fuer galvanische Zellen |
| US4486286A (en) * | 1982-09-28 | 1984-12-04 | Nerken Research Corp. | Method of depositing a carbon film on a substrate and products obtained thereby |
| US4495044A (en) * | 1983-05-17 | 1985-01-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Diamondlike flakes |
| US4437962A (en) | 1983-05-17 | 1984-03-20 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Diamondlike flake composites |
| US4524106A (en) * | 1983-06-23 | 1985-06-18 | Energy Conversion Devices, Inc. | Decorative carbon coating and method |
| DE3335623A1 (de) * | 1983-09-30 | 1985-04-11 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer kohlenstoff enthaltenden schicht, kohlenstoff enthaltende schicht, verwendung einer kohlenstoff enthaltenden schicht und vorrichtung zur durchfuehrung eines verfahrens zur herstellung einer kohlenstoff enthaltenden schicht |
| US5387247A (en) * | 1983-10-25 | 1995-02-07 | Sorin Biomedia S.P.A. | Prosthetic device having a biocompatible carbon film thereon and a method of and apparatus for forming such device |
| CA1235087A (en) * | 1983-11-28 | 1988-04-12 | Akio Hiraki | Diamond-like thin film and method for making the same |
| CA1232228A (en) * | 1984-03-13 | 1988-02-02 | Tatsuro Miyasato | Coating film and method and apparatus for producing the same |
| US5084151A (en) * | 1985-11-26 | 1992-01-28 | Sorin Biomedica S.P.A. | Method and apparatus for forming prosthetic device having a biocompatible carbon film thereon |
| US5073241A (en) * | 1986-01-31 | 1991-12-17 | Kabushiki Kaisha Meidenshae | Method for carbon film production |
| US4828668A (en) * | 1986-03-10 | 1989-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering system for deposition on parallel substrates |
| IT1196836B (it) * | 1986-12-12 | 1988-11-25 | Sorin Biomedica Spa | Protesi in materiale polimerico con rivestimento di carbonio biocompatibile |
| US5087478A (en) * | 1989-08-01 | 1992-02-11 | Hughes Aircraft Company | Deposition method and apparatus using plasma discharge |
| JPH0830260B2 (ja) * | 1990-08-22 | 1996-03-27 | アネルバ株式会社 | 真空処理装置 |
| US5313094A (en) * | 1992-01-28 | 1994-05-17 | International Business Machines Corportion | Thermal dissipation of integrated circuits using diamond paths |
| US5391510A (en) * | 1992-02-28 | 1995-02-21 | International Business Machines Corporation | Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps |
| TW366367B (en) * | 1995-01-26 | 1999-08-11 | Ibm | Sputter deposition of hydrogenated amorphous carbon film |
| EP0989211B1 (en) * | 1997-04-16 | 2004-08-11 | OOO "Vysokie Tekhnologii" | Process for obtaining diamond layers by gaseous-phase synthesis |
| US5874745A (en) * | 1997-08-05 | 1999-02-23 | International Business Machines Corporation | Thin film transistor with carbonaceous gate dielectric |
| RU2139236C1 (ru) * | 1998-07-07 | 1999-10-10 | Кириллов Леонид Иванович | Установка для производства водорода, сажи и алмазов |
| RU2140428C1 (ru) * | 1998-07-07 | 1999-10-27 | Кириллов Леонид Иванович | Установка для производства сажи и алмазов |
| US6964731B1 (en) | 1998-12-21 | 2005-11-15 | Cardinal Cg Company | Soil-resistant coating for glass surfaces |
| US6660365B1 (en) | 1998-12-21 | 2003-12-09 | Cardinal Cg Company | Soil-resistant coating for glass surfaces |
| US6974629B1 (en) | 1999-08-06 | 2005-12-13 | Cardinal Cg Company | Low-emissivity, soil-resistant coating for glass surfaces |
| US6573565B2 (en) * | 1999-07-28 | 2003-06-03 | International Business Machines Corporation | Method and structure for providing improved thermal conduction for silicon semiconductor devices |
| US6508911B1 (en) | 1999-08-16 | 2003-01-21 | Applied Materials Inc. | Diamond coated parts in a plasma reactor |
| RU2178435C2 (ru) * | 2000-04-10 | 2002-01-20 | Кириллов Леонид Иванович | Устройство для производства алмазов |
| RU2179174C2 (ru) * | 2000-04-17 | 2002-02-10 | Кириллов Леонид Иванович | Устройство для производства алмазов |
| RU2179987C2 (ru) * | 2000-05-22 | 2002-02-27 | Кириллов Леонид Иванович | Устройство для производства алмазов |
| US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
| US6904935B2 (en) | 2002-12-18 | 2005-06-14 | Masco Corporation Of Indiana | Valve component with multiple surface layers |
| US7866343B2 (en) | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
| US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
| US7866342B2 (en) | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
| CA2550331A1 (en) | 2003-12-22 | 2005-07-14 | Cardinal Cg Compagny | Graded photocatalytic coatings |
| ATE377580T1 (de) | 2004-07-12 | 2007-11-15 | Cardinal Cg Co | Wartungsarme beschichtungen |
| US7923114B2 (en) | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
| US8092660B2 (en) | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
| US20070026205A1 (en) | 2005-08-01 | 2007-02-01 | Vapor Technologies Inc. | Article having patterned decorative coating |
| US7989094B2 (en) * | 2006-04-19 | 2011-08-02 | Cardinal Cg Company | Opposed functional coatings having comparable single surface reflectances |
| US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
| KR101563197B1 (ko) | 2007-09-14 | 2015-10-26 | 카디날 씨지 컴퍼니 | 관리 용이한 코팅 및 이의 제조방법 |
| EP3541762B1 (en) | 2016-11-17 | 2022-03-02 | Cardinal CG Company | Static-dissipative coating technology |
-
1971
- 1971-10-28 SU SU1708806A patent/SU411037A1/ru active
-
1972
- 1972-10-20 CH CH1531672A patent/CH582622A5/xx not_active IP Right Cessation
- 1972-10-23 GB GB4865772A patent/GB1396987A/en not_active Expired
- 1972-10-24 US US00300350A patent/US3840451A/en not_active Expired - Lifetime
- 1972-10-25 FR FR7237850A patent/FR2157957B1/fr not_active Expired
- 1972-10-25 DE DE2252343A patent/DE2252343C3/de not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2560380C1 (ru) * | 2014-07-18 | 2015-08-20 | Федеральное Государственное Автономное Образовательное Учреждение Высшего Профессионального Образования "Сибирский Федеральный Университет" | Способ получения искусственных алмазов из графита |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2252343C3 (de) | 1978-07-13 |
| CH582622A5 (ru) | 1976-12-15 |
| DE2252343B2 (de) | 1977-11-17 |
| FR2157957B1 (ru) | 1976-10-29 |
| US3840451A (en) | 1974-10-08 |
| DE2252343A1 (de) | 1973-05-10 |
| GB1396987A (en) | 1975-06-11 |
| FR2157957A1 (ru) | 1973-06-08 |
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