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SG11201408432YA - Manufacturing semiconductor-based multi-junction photovoltaic devices - Google Patents

Manufacturing semiconductor-based multi-junction photovoltaic devices

Info

Publication number
SG11201408432YA
SG11201408432YA SG11201408432YA SG11201408432YA SG11201408432YA SG 11201408432Y A SG11201408432Y A SG 11201408432YA SG 11201408432Y A SG11201408432Y A SG 11201408432YA SG 11201408432Y A SG11201408432Y A SG 11201408432YA SG 11201408432Y A SG11201408432Y A SG 11201408432YA
Authority
SG
Singapore
Prior art keywords
lllll
international
illinois
drive
llll
Prior art date
Application number
SG11201408432YA
Inventor
David Ahmari
Swee Lim
Shiva Rai
David Forbes
Original Assignee
Epiworks Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=49769443&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11201408432Y(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Epiworks Inc filed Critical Epiworks Inc
Publication of SG11201408432YA publication Critical patent/SG11201408432YA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/13—Photovoltaic cells having absorbing layers comprising graded bandgaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H10F10/1425—Inverted metamorphic multi-junction [IMM] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 27 December 2013 (27.12.2013) WIPOIPCT (10) International Publication Number WO 2013/192559 A1 (51) International Patent Classification: H01L 31/0725 (2012.01) H01L 31/18 (2006.01) H01L 31/042 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/US2013/047127 21 June 2013 (21.06.2013) English (30) Priority Data: 61/663,374 61/718,708 22 June 2012 (22.06.2012) 26 October 2012 (26.10.2012) English US US (71) Applicant: IZAR SOLAR INC [US/US]; 1606 Rion Drive, Champaign, Illinois 61822 (US). (72) Inventors: AHMARI, David; 3006 Glenhill Place, Cham­ paign, Illinois 61822 (US). LIM, Swee; 1125 Baytowne Drive, Apt. 24, Champaign, Illinois 61822 (US). RAI, Shiva; 4005 Aberdeen Drive, Champaign, Illinois 61822 (US). FORBES, David; 527 W. Sturbridge Drive, Medina, Ohio 44256 (US). (74) Agent: LIANG, Bing; 6100 219th ST S.W., STE 580, Mountlake Terrace, Washington 98043 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). [Continued on next page] (54) Title: MANUFACTURING SEMICONDUCTOR-BASED MULTI-JUNCTION PHOTOVOLTAIC DEVICES — 100 o\ CJ o\ i-H cn i-H o CJ O £ 140C. 142B. MOB. 142A. 140A Third Cell Tunnel Junction B Second Cell Tunnel Junction A First Cell (Substrate) (57) Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also ad­ apted to provide for a more uniform and consistent fabrica­ tion of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semicon­ ductor elements in one or more semiconductor layers, result­ ing in a more optimal solar cell device. y IOOA FIG. 1A WO 2013/192559 A11 lllll llllllll II llllll III lllll lllll III III III lllll lllll lllll lllll lllll llll llll lllllll llll llll Published: — with international search report (Art. 21(3))
SG11201408432YA 2012-06-22 2013-06-21 Manufacturing semiconductor-based multi-junction photovoltaic devices SG11201408432YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261663374P 2012-06-22 2012-06-22
US201261718708P 2012-10-26 2012-10-26
PCT/US2013/047127 WO2013192559A1 (en) 2012-06-22 2013-06-21 Manufacturing semiconductor-based multi-junction photovoltaic devices

Publications (1)

Publication Number Publication Date
SG11201408432YA true SG11201408432YA (en) 2015-01-29

Family

ID=49769443

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201408432YA SG11201408432YA (en) 2012-06-22 2013-06-21 Manufacturing semiconductor-based multi-junction photovoltaic devices

Country Status (7)

Country Link
US (3) US8951827B2 (en)
EP (1) EP2865016B1 (en)
JP (2) JP6277184B2 (en)
CN (3) CN107799621A (en)
AU (1) AU2013277994A1 (en)
SG (1) SG11201408432YA (en)
WO (1) WO2013192559A1 (en)

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Also Published As

Publication number Publication date
JP2015520524A (en) 2015-07-16
US20130344645A1 (en) 2013-12-26
JP2018026583A (en) 2018-02-15
CN107425084B (en) 2019-10-25
CN107799621A (en) 2018-03-13
US20150104899A1 (en) 2015-04-16
JP6277184B2 (en) 2018-02-07
CN104541379A (en) 2015-04-22
US9972737B2 (en) 2018-05-15
CN104541379B (en) 2017-09-12
AU2013277994A1 (en) 2015-01-22
US8951827B2 (en) 2015-02-10
JP6461278B2 (en) 2019-01-30
EP2865016A1 (en) 2015-04-29
CN107425084A (en) 2017-12-01
US10283666B2 (en) 2019-05-07
EP2865016B1 (en) 2024-06-05
US20170345962A1 (en) 2017-11-30
WO2013192559A1 (en) 2013-12-27
EP2865016A4 (en) 2016-04-27

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