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SG10201505734PA - Bonding structure, method of manufacturing the same, and die structure - Google Patents

Bonding structure, method of manufacturing the same, and die structure

Info

Publication number
SG10201505734PA
SG10201505734PA SG10201505734PA SG10201505734PA SG10201505734PA SG 10201505734P A SG10201505734P A SG 10201505734PA SG 10201505734P A SG10201505734P A SG 10201505734PA SG 10201505734P A SG10201505734P A SG 10201505734PA SG 10201505734P A SG10201505734P A SG 10201505734PA
Authority
SG
Singapore
Prior art keywords
manufacturing
same
die
bonding
bonding structure
Prior art date
Application number
SG10201505734PA
Inventor
Chen Kuan-Wei
Tzeng Pei-Jer
Chen Chien-Chou
Chang Po-Chih
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Publication of SG10201505734PA publication Critical patent/SG10201505734PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H01L2223/5446—Located in scribe lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Adhesives Or Adhesive Processes (AREA)
SG10201505734PA 2015-05-13 2015-07-23 Bonding structure, method of manufacturing the same, and die structure SG10201505734PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW104115136A TWI645479B (en) 2015-05-13 2015-05-13 Fitting structure, manufacturing method thereof and grain structure

Publications (1)

Publication Number Publication Date
SG10201505734PA true SG10201505734PA (en) 2016-12-29

Family

ID=57277712

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201505734PA SG10201505734PA (en) 2015-05-13 2015-07-23 Bonding structure, method of manufacturing the same, and die structure

Country Status (5)

Country Link
US (1) US9721824B2 (en)
JP (1) JP2016213431A (en)
KR (1) KR20160134463A (en)
SG (1) SG10201505734PA (en)
TW (1) TWI645479B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9905466B2 (en) * 2016-06-28 2018-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer partitioning method and device formed
TWI731260B (en) * 2018-08-30 2021-06-21 奕力科技（開曼）股份有限公司 Semiconductor substrate structure and manufacturing method thereof
KR20220029987A (en) * 2020-09-02 2022-03-10 에스케이하이닉스 주식회사 Three dimensional semiconductor device
WO2025017863A1 (en) * 2023-07-19 2025-01-23 三菱電機株式会社 Semiconductor device and method for manufacturing semiconductor device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6140081A (en) * 1984-07-31 1986-02-26 Sharp Corp Optical semiconductor device
JPH08107091A (en) 1994-09-30 1996-04-23 Kyushu Komatsu Denshi Kk Manufacture of soi substrate
US6406636B1 (en) * 1999-06-02 2002-06-18 Megasense, Inc. Methods for wafer to wafer bonding using microstructures
US6436793B1 (en) 2000-12-28 2002-08-20 Xerox Corporation Methods of forming semiconductor structure
US7439158B2 (en) 2003-07-21 2008-10-21 Micron Technology, Inc. Strained semiconductor by full wafer bonding
US8426720B2 (en) * 2004-01-09 2013-04-23 Industrial Technology Research Institute Micro thermoelectric device and manufacturing method thereof
TWI239057B (en) 2004-04-14 2005-09-01 Hsieh Chih Hung Wafer-scale packaging method for image sensing device
US7972683B2 (en) * 2006-03-28 2011-07-05 Innovative Micro Technology Wafer bonding material with embedded conductive particles
WO2007142802A2 (en) * 2006-05-23 2007-12-13 Vladimir Vaganov Method of wafer-to-wafer bonding
US7843022B2 (en) 2007-10-18 2010-11-30 The Board Of Trustees Of The Leland Stanford Junior University High-temperature electrostatic transducers and fabrication method
TWI339188B (en) * 2007-11-21 2011-03-21 Ind Tech Res Inst A package structure for mems type microphone and method therefor
TWI352412B (en) * 2008-03-03 2011-11-11 Advanced Semiconductor Eng Multi-chip package structure and method of fabrica
US8664747B2 (en) 2008-04-28 2014-03-04 Toshiba Techno Center Inc. Trenched substrate for crystal growth and wafer bonding
US7981765B2 (en) 2008-09-10 2011-07-19 Analog Devices, Inc. Substrate bonding with bonding material having rare earth metal
US8119498B2 (en) 2008-09-24 2012-02-21 Evigia Systems, Inc. Wafer bonding method and wafer stack formed thereby
CN101930942A (en) 2009-06-24 2010-12-29 宇威光电股份有限公司 Method for cutting semiconductor wafer
US8486758B2 (en) 2010-12-20 2013-07-16 Tessera, Inc. Simultaneous wafer bonding and interconnect joining
US8987059B2 (en) 2012-01-04 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS devices and methods of forming same
US8796054B2 (en) * 2012-05-31 2014-08-05 Corning Incorporated Gallium nitride to silicon direct wafer bonding
KR102136844B1 (en) 2013-09-30 2020-07-22 삼성전자 주식회사 Wafer processing method and method for fabricating semiconductor device using the same processing method

Also Published As

Publication number Publication date
KR20160134463A (en) 2016-11-23
US20160336211A1 (en) 2016-11-17
TWI645479B (en) 2018-12-21
TW201640594A (en) 2016-11-16
JP2016213431A (en) 2016-12-15
US9721824B2 (en) 2017-08-01

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