SE9703295D0 - Electrical devices and a method of manufacturing the same - Google Patents
Electrical devices and a method of manufacturing the sameInfo
- Publication number
- SE9703295D0 SE9703295D0 SE9703295A SE9703295A SE9703295D0 SE 9703295 D0 SE9703295 D0 SE 9703295D0 SE 9703295 A SE9703295 A SE 9703295A SE 9703295 A SE9703295 A SE 9703295A SE 9703295 D0 SE9703295 D0 SE 9703295D0
- Authority
- SE
- Sweden
- Prior art keywords
- region
- manufacturing
- regions
- insulating layer
- conductive element
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000926 separation method Methods 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000001419 dependent effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
- H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/354—Astable circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0098—Functional aspects of oscillators having a balanced output signal
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Priority Applications (18)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9703295A SE515783C2 (sv) | 1997-09-11 | 1997-09-11 | Elektriska anordningar jämte förfarande för deras tillverkning |
| AU91924/98A AU741339B2 (en) | 1997-09-11 | 1998-09-01 | Electrical devices and a method of manufacturing the same |
| EEP200000047A EE200000047A (et) | 1997-09-11 | 1998-09-01 | Elektriline seadis ja selle valmistamise meetod |
| IL15939898A IL159398A0 (en) | 1997-09-11 | 1998-09-01 | A method of manufacturing an electrical device |
| CN200310116398.7A CN100557945C (zh) | 1997-09-11 | 1998-09-01 | 电器件及其制造方法 |
| PCT/SE1998/001554 WO1999013514A2 (en) | 1997-09-11 | 1998-09-01 | Electrical devices and a method of manufacturing the same |
| JP2000511198A JP2001516955A (ja) | 1997-09-11 | 1998-09-01 | 電気デバイスおよびその製造方法 |
| IL13441698A IL134416A (en) | 1997-09-11 | 1998-09-01 | Electrical devices |
| IL15918798A IL159187A (en) | 1997-09-11 | 1998-09-01 | Voltage controlled oscillator |
| TR2000/00511T TR200000511T2 (tr) | 1997-09-11 | 1998-09-01 | Elektrikli cihazlar ve bunları imal etmek için bir yöntem. |
| BRPI9811639A BRPI9811639B1 (pt) | 1997-09-11 | 1998-09-01 | dispositivos elétricos, oscilador controlado por tensão, e, processo para fabricar um dispositivo elétrico |
| CNB988090767A CN100342553C (zh) | 1997-09-11 | 1998-09-01 | 电器件及其制造方法 |
| KR1020007002614A KR100552916B1 (ko) | 1997-09-11 | 1998-09-01 | 전기 소자 및 그 제조방법 |
| US09/150,231 US6100770A (en) | 1997-09-11 | 1998-09-09 | MIS transistor varactor device and oscillator using same |
| MYPI98004134A MY115602A (en) | 1997-09-11 | 1998-09-10 | Mis transistor varactor device and osillator using same |
| ARP980104540A AR017100A1 (es) | 1997-09-11 | 1998-09-11 | Un aparato electrico, particularmente, un varactor, un oscilador de voltaje controlado, un circuito de bucle de enganche de fase y un aparato de comunicacion por radio que incorporan dicho aparato, y un metodo para fabricar este ultimo |
| JP2011161985A JP2012028782A (ja) | 1997-09-11 | 2011-07-25 | 電気デバイス |
| JP2013185188A JP5848297B2 (ja) | 1997-09-11 | 2013-09-06 | 電気デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9703295A SE515783C2 (sv) | 1997-09-11 | 1997-09-11 | Elektriska anordningar jämte förfarande för deras tillverkning |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9703295D0 true SE9703295D0 (sv) | 1997-09-11 |
| SE9703295L SE9703295L (sv) | 1999-03-12 |
| SE515783C2 SE515783C2 (sv) | 2001-10-08 |
Family
ID=20408227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9703295A SE515783C2 (sv) | 1997-09-11 | 1997-09-11 | Elektriska anordningar jämte förfarande för deras tillverkning |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US6100770A (sv) |
| JP (3) | JP2001516955A (sv) |
| KR (1) | KR100552916B1 (sv) |
| CN (2) | CN100342553C (sv) |
| AR (1) | AR017100A1 (sv) |
| AU (1) | AU741339B2 (sv) |
| BR (1) | BRPI9811639B1 (sv) |
| EE (1) | EE200000047A (sv) |
| IL (3) | IL159187A (sv) |
| MY (1) | MY115602A (sv) |
| SE (1) | SE515783C2 (sv) |
| TR (1) | TR200000511T2 (sv) |
| WO (1) | WO1999013514A2 (sv) |
Families Citing this family (56)
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| US6320474B1 (en) * | 1998-12-28 | 2001-11-20 | Interchip Corporation | MOS-type capacitor and integrated circuit VCO using same |
| US6369671B1 (en) * | 1999-03-30 | 2002-04-09 | International Business Machines Corporation | Voltage controlled transmission line with real-time adaptive control |
| US6271733B1 (en) * | 1999-12-13 | 2001-08-07 | Agere Systems Guardian Corp. | Integrated oscillator circuit with a memory based frequency control circuit and associated methods |
| US6407412B1 (en) * | 2000-03-10 | 2002-06-18 | Pmc-Sierra Inc. | MOS varactor structure with engineered voltage control range |
| US7000119B1 (en) | 2000-04-20 | 2006-02-14 | Realnetworks, Inc. | Instruction/data protection employing derived obscuring instruction/data |
| US6504443B1 (en) | 2000-05-17 | 2003-01-07 | Nec America, Inc., | Common anode varactor tuned LC circuit |
| US6642607B2 (en) * | 2001-02-05 | 2003-11-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
| US6621362B2 (en) | 2001-05-18 | 2003-09-16 | Broadcom Corporation | Varactor based differential VCO band switching |
| DE10126328A1 (de) * | 2001-05-30 | 2002-12-12 | Infineon Technologies Ag | Integrierte, abstimmbare Kapazität |
| KR100530739B1 (ko) * | 2001-06-28 | 2005-11-28 | 한국전자통신연구원 | 가변 수동소자 및 그 제조방법 |
| US7235862B2 (en) * | 2001-07-10 | 2007-06-26 | National Semiconductor Corporation | Gate-enhanced junction varactor |
| DE10139396A1 (de) * | 2001-08-10 | 2003-01-16 | Infineon Technologies Ag | Integrierte Halbleiterschaltung mit einem Varaktor |
| US6667539B2 (en) | 2001-11-08 | 2003-12-23 | International Business Machines Corporation | Method to increase the tuning voltage range of MOS varactors |
| US6521506B1 (en) | 2001-12-13 | 2003-02-18 | International Business Machines Corporation | Varactors for CMOS and BiCMOS technologies |
| US6828654B2 (en) * | 2001-12-27 | 2004-12-07 | Broadcom Corporation | Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same |
| US7169679B2 (en) * | 2002-01-07 | 2007-01-30 | Honeywell International Inc. | Varactor with improved tuning range |
| US7081663B2 (en) * | 2002-01-18 | 2006-07-25 | National Semiconductor Corporation | Gate-enhanced junction varactor with gradual capacitance variation |
| DE10206375A1 (de) * | 2002-02-15 | 2003-06-26 | Infineon Technologies Ag | Integrierte, abstimmbare Kapazität |
| JP4153233B2 (ja) * | 2002-04-18 | 2008-09-24 | 富士通株式会社 | pnバラクタ |
| DE10222764B4 (de) * | 2002-05-15 | 2011-06-01 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Halbleitervaraktor und damit aufgebauter Oszillator |
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| KR100460273B1 (ko) * | 2003-03-25 | 2004-12-08 | 매그나칩 반도체 유한회사 | 모스 바랙터의 제조방법 |
| JP4046634B2 (ja) | 2003-04-08 | 2008-02-13 | Necエレクトロニクス株式会社 | 電圧制御型容量素子及び半導体集積回路 |
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| US6825089B1 (en) * | 2003-06-04 | 2004-11-30 | Agere Systems Inc. | Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well |
| JP2005019487A (ja) | 2003-06-24 | 2005-01-20 | Nippon Precision Circuits Inc | Mos型可変容量素子及び電圧制御発振回路 |
| US7075379B2 (en) * | 2003-07-23 | 2006-07-11 | Agency For Science, Technology And Research | Low supply-sensitive and wide tuning-range CMOS LC-tank voltage-controlled oscillator monolithic integrated circuit |
| TWI373925B (en) * | 2004-02-10 | 2012-10-01 | Tridev Res L L C | Tunable resonant circuit, tunable voltage controlled oscillator circuit, tunable low noise amplifier circuit and method of tuning a resonant circuit |
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| SE527215C2 (sv) * | 2004-03-23 | 2006-01-24 | Infineon Technologies Ag | Integrerad omkopplingsanordning |
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| US7323948B2 (en) * | 2005-08-23 | 2008-01-29 | International Business Machines Corporation | Vertical LC tank device |
| DE102005061683B4 (de) * | 2005-12-21 | 2011-12-08 | Forschungsverbund Berlin E.V. | Vorrichtung, Tastkopf und Verfahren zur galvanisch entkoppelten Übertragung eines Messsignals |
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| US7825441B2 (en) * | 2007-06-25 | 2010-11-02 | International Business Machines Corporation | Junction field effect transistor with a hyperabrupt junction |
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| US8008748B2 (en) * | 2008-12-23 | 2011-08-30 | International Business Machines Corporation | Deep trench varactors |
| CN101924142B (zh) * | 2009-06-17 | 2011-09-14 | 中国科学院微电子研究所 | 一种GaAs肖特基变容二极管及其制作方法 |
| US9236466B1 (en) | 2011-10-07 | 2016-01-12 | Mie Fujitsu Semiconductor Limited | Analog circuits having improved insulated gate transistors, and methods therefor |
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| US9299699B2 (en) | 2013-03-13 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-gate and complementary varactors in FinFET process |
| US9847433B2 (en) * | 2014-05-30 | 2017-12-19 | Interchip Corporation | Integrated MOS varicap, and voltage controlled oscillator and filter having same |
| EP3238248A4 (en) | 2014-12-24 | 2018-08-29 | Intel Corporation | Cmos varactor with increased tuning range |
| US9837555B2 (en) * | 2015-04-15 | 2017-12-05 | Futurewei Technologies, Inc. | Apparatus and method for a low loss coupling capacitor |
| KR102345676B1 (ko) * | 2015-09-09 | 2021-12-31 | 에스케이하이닉스 주식회사 | 모스 버렉터 및 이를 포함하는 반도체 집적소자 |
| US10608123B2 (en) | 2017-05-08 | 2020-03-31 | Qualcomm Incorporated | Metal oxide semiconductor varactor quality factor enhancement |
| KR20200058192A (ko) | 2018-11-19 | 2020-05-27 | 이용재 | 압력 밸런스 기능을 갖는 가스용기 밸브 |
| US11524222B2 (en) | 2018-11-21 | 2022-12-13 | Hanayama International Trading Limited | Polyhedral toy |
| US11515434B2 (en) * | 2019-09-17 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Decoupling capacitor and method of making the same |
| JP7267437B2 (ja) * | 2020-04-22 | 2023-05-01 | 長江存儲科技有限責任公司 | 可変キャパシタ |
| CN119730258A (zh) * | 2024-12-09 | 2025-03-28 | 武汉新芯集成电路股份有限公司 | 电容结构及其控制方法、半导体器件 |
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| US5629652A (en) * | 1996-05-09 | 1997-05-13 | Analog Devices | Band-switchable, low-noise voltage controlled oscillator (VCO) for use with low-q resonator elements |
| US5914513A (en) * | 1997-06-23 | 1999-06-22 | The Board Of Trustees Of The University Of Illinois | Electronically tunable capacitor |
-
1997
- 1997-09-11 SE SE9703295A patent/SE515783C2/sv not_active IP Right Cessation
-
1998
- 1998-09-01 JP JP2000511198A patent/JP2001516955A/ja active Pending
- 1998-09-01 BR BRPI9811639A patent/BRPI9811639B1/pt active IP Right Grant
- 1998-09-01 CN CNB988090767A patent/CN100342553C/zh not_active Expired - Lifetime
- 1998-09-01 CN CN200310116398.7A patent/CN100557945C/zh not_active Expired - Lifetime
- 1998-09-01 IL IL15918798A patent/IL159187A/xx not_active IP Right Cessation
- 1998-09-01 EE EEP200000047A patent/EE200000047A/xx unknown
- 1998-09-01 TR TR2000/00511T patent/TR200000511T2/xx unknown
- 1998-09-01 WO PCT/SE1998/001554 patent/WO1999013514A2/en not_active Ceased
- 1998-09-01 AU AU91924/98A patent/AU741339B2/en not_active Expired
- 1998-09-01 IL IL13441698A patent/IL134416A/en not_active IP Right Cessation
- 1998-09-01 IL IL15939898A patent/IL159398A0/xx unknown
- 1998-09-01 KR KR1020007002614A patent/KR100552916B1/ko not_active Expired - Lifetime
- 1998-09-09 US US09/150,231 patent/US6100770A/en not_active Expired - Lifetime
- 1998-09-10 MY MYPI98004134A patent/MY115602A/en unknown
- 1998-09-11 AR ARP980104540A patent/AR017100A1/es active IP Right Grant
-
2011
- 2011-07-25 JP JP2011161985A patent/JP2012028782A/ja active Pending
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2013
- 2013-09-06 JP JP2013185188A patent/JP5848297B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN100342553C (zh) | 2007-10-10 |
| IL159187A0 (en) | 2004-06-01 |
| JP2012028782A (ja) | 2012-02-09 |
| IL159187A (en) | 2005-06-19 |
| CN100557945C (zh) | 2009-11-04 |
| SE9703295L (sv) | 1999-03-12 |
| JP2014039043A (ja) | 2014-02-27 |
| JP2001516955A (ja) | 2001-10-02 |
| KR100552916B1 (ko) | 2006-02-22 |
| BR9811639A (pt) | 2000-08-08 |
| BRPI9811639B1 (pt) | 2016-08-02 |
| AU9192498A (en) | 1999-03-29 |
| US6100770A (en) | 2000-08-08 |
| EE200000047A (et) | 2000-10-16 |
| WO1999013514A2 (en) | 1999-03-18 |
| IL134416A (en) | 2004-08-31 |
| JP5848297B2 (ja) | 2016-01-27 |
| MY115602A (en) | 2003-07-31 |
| KR20010023918A (ko) | 2001-03-26 |
| IL134416A0 (en) | 2001-04-30 |
| CN1270704A (zh) | 2000-10-18 |
| TR200000511T2 (tr) | 2000-06-21 |
| SE515783C2 (sv) | 2001-10-08 |
| CN1508966A (zh) | 2004-06-30 |
| AU741339B2 (en) | 2001-11-29 |
| IL159398A0 (en) | 2004-06-01 |
| AR017100A1 (es) | 2001-08-22 |
| WO1999013514A3 (en) | 1999-06-24 |
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| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |