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RU99102710A - METHOD FOR PRODUCING METAL SILICON - Google Patents

METHOD FOR PRODUCING METAL SILICON

Info

Publication number
RU99102710A
RU99102710A RU99102710/12A RU99102710A RU99102710A RU 99102710 A RU99102710 A RU 99102710A RU 99102710/12 A RU99102710/12 A RU 99102710/12A RU 99102710 A RU99102710 A RU 99102710A RU 99102710 A RU99102710 A RU 99102710A
Authority
RU
Russia
Prior art keywords
reducing agent
silicon
silicon dioxide
mpa
ppm
Prior art date
Application number
RU99102710/12A
Other languages
Russian (ru)
Other versions
RU2160705C2 (en
Inventor
Е.А. Богачев
И.М. Абдюханов
А.Н. Тимофеев
М.А. Абдюханов
Original Assignee
Открытое акционерное общество Научно-производственное объединение "Композит"
Filing date
Publication date
Application filed by Открытое акционерное общество Научно-производственное объединение "Композит" filed Critical Открытое акционерное общество Научно-производственное объединение "Композит"
Priority to RU99102710A priority Critical patent/RU2160705C2/en
Priority claimed from RU99102710A external-priority patent/RU2160705C2/en
Priority to PCT/RU2000/000039 priority patent/WO2000047784A2/en
Publication of RU99102710A publication Critical patent/RU99102710A/en
Application granted granted Critical
Publication of RU2160705C2 publication Critical patent/RU2160705C2/en

Links

Claims (3)

1. Способ получения кремния, включающий карботермическое восстановление диоксида кремния до карбида кремния органическим восстановителем и взаимодействие карбида кремния с диоксидом кремния, отличающийся тем, что в качестве исходных материалов используют диоксид кремния определенной степени чистоты, а в качестве органического восстановителя используют углеродосодержащий восстановитель на основе жидких фенольных смол определенной чистоты, при этом сам процесс получения кремния включает 3 приема термообработки от комнатной температур до 160°С при 0,1-0,7 МПа, до 800°С в инертной среде и до 1700°С в среде инертного газа в два этапа до 1300 - 1400°С при 0,01 Па и с 1300 - 1400°С до 1800°С и переменном давлении с 0,01 Па до 0,1 МПа.1. A method of producing silicon, including carbothermal reduction of silicon dioxide to silicon carbide with an organic reducing agent and the interaction of silicon carbide with silicon dioxide, characterized in that silicon dioxide of a certain degree of purity is used as starting materials, and a carbon-based reducing agent based on liquid is used as an organic reducing agent phenolic resins of a certain purity, while the process of obtaining silicon itself includes 3 methods of heat treatment from room temperature ur up to 160 ° С at 0.1-0.7 MPa, up to 800 ° С in an inert medium and up to 1700 ° С in an inert gas in two stages up to 1300 - 1400 ° С at 0.01 Pa and from 1300 - 1400 ° C to 1800 ° C and variable pressure from 0.01 Pa to 0.1 MPa. 2. Способ по п. 1, отличающийся тем, что диоксид кремния имеет содержание примесей не более 190 ppm. 2. The method according to p. 1, characterized in that the silicon dioxide has an impurity content of not more than 190 ppm. 3. Способ по п.1, отличающийся тем, что углеродосодержащий восстановитель на основе жидких фенольных смол содержит примесей не более 80 ppm. 3. The method according to claim 1, characterized in that the carbon-containing reducing agent based on liquid phenolic resins contains impurities of not more than 80 ppm.
RU99102710A 1999-02-11 1999-02-11 Method of production of metallic silicon RU2160705C2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
RU99102710A RU2160705C2 (en) 1999-02-11 1999-02-11 Method of production of metallic silicon
PCT/RU2000/000039 WO2000047784A2 (en) 1999-02-11 2000-02-07 Method for producing metallic silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU99102710A RU2160705C2 (en) 1999-02-11 1999-02-11 Method of production of metallic silicon

Publications (2)

Publication Number Publication Date
RU99102710A true RU99102710A (en) 2000-11-27
RU2160705C2 RU2160705C2 (en) 2000-12-20

Family

ID=20215778

Family Applications (1)

Application Number Title Priority Date Filing Date
RU99102710A RU2160705C2 (en) 1999-02-11 1999-02-11 Method of production of metallic silicon

Country Status (2)

Country Link
RU (1) RU2160705C2 (en)
WO (1) WO2000047784A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004048621A1 (en) * 2002-08-29 2004-06-10 Elkem Asa Production of metals and alloys using solid carbon produced from carbon-containing gas
RU2333889C2 (en) * 2006-08-18 2008-09-20 Иосиф Григорьевич Альперович Charge for production of pure silicon
RU2428378C1 (en) * 2010-04-09 2011-09-10 Михаил Георгиевич Зуев Method of producing silicon metal
CN102786054A (en) * 2012-09-07 2012-11-21 昆明冶金研究院 Method for reduction smelting of microsilica
RU2570153C1 (en) * 2014-08-29 2015-12-10 Общество с ограниченной ответственностью "Объединенная Компания РУСАЛ Инженерно-технологический центр" Method of technical silicon melting
FR3145359B1 (en) * 2023-01-27 2025-03-07 Hpq Silicium Inc APPARATUS AND METHOD FOR PRODUCING SILICON BY CARBO-REDUCTION

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2008559A (en) * 1977-09-09 1979-06-06 Goldblatt N Z Production of silicon
DE3023297C2 (en) * 1980-06-21 1988-05-05 International Minerals & Chemical Luxembourg S.A., 2010 Luxembourg Process for the production of a preliminary product for the production of silicon carbide
SU1494861A3 (en) * 1983-11-26 1989-07-15 Интернэшнл Минерал Энд Кемикал Корпорейшн (Фирма) Method of producing silicon in low-shaft electric furnace
DE3439550A1 (en) * 1984-10-29 1986-04-30 Siemens Ag Process for producing silicon for solar cells

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