RU2003200C1 - Process of production of diamond and diamond-like films out of gaseous phase - Google Patents
Process of production of diamond and diamond-like films out of gaseous phaseInfo
- Publication number
- RU2003200C1 RU2003200C1 SU5007516A RU2003200C1 RU 2003200 C1 RU2003200 C1 RU 2003200C1 SU 5007516 A SU5007516 A SU 5007516A RU 2003200 C1 RU2003200 C1 RU 2003200C1
- Authority
- RU
- Russia
- Prior art keywords
- diamond
- substrate
- film
- production
- gaseous phase
- Prior art date
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
через плазменный поток со скоростью 0,10- 10 м/мин (в зависимости от материала подложки ). Количество прохождений подложки через зону реакции выбираетс равным или большим единице.through a plasma stream at a speed of 0.10-10 m / min (depending on the substrate material). The number of passes of the substrate through the reaction zone is selected to be equal to or greater than one.
Пример. Подложку из кремни устанавливают на перемещающемс столике, расположенном на определенном рассто нии от плазмотронов. Газова смесь метана с водородом, формируема путем смешени газов, поступающих из баллонов, с помощью устройства ввода подаетс в плазменный поток, образованный четырьм сход щимис стру ми инертного газа, в место их сли ни . Подвижный столик, на котором установлена подложка, может быть снабжен системой охлаждени . При пересечении подложкой плазменного потока на ее поверхности осаждаетс поликристаллическа алмазна или аморфна алмазоподоб- на пленка - в зависимости от процентного содержани метана в водороде.Example. The silicon substrate is mounted on a moving table located at a certain distance from the plasma torches. The gas mixture of methane with hydrogen, formed by mixing the gases from the cylinders, is fed into the plasma stream, formed by four converging jets of inert gas, using the input device to the place where they merge. The movable table on which the substrate is mounted may be provided with a cooling system. When the substrate crosses the plasma stream, a polycrystalline diamond or amorphous diamond-like film is deposited on its surface, depending on the percentage of methane in hydrogen.
Установлено, что при содержании 1-2% метана в водороде на подложке наблюдаетс рост алмазоподобной пленки гидрогени- зированного углерода, а при содержании 5-10% метана в водороде растет поликри0It was found that at a content of 1-2% methane in hydrogen on the substrate, a diamond-like film of hydrogenated carbon grows, while at a content of 5-10% methane in hydrogen, polycry
сталлическа алмазна пленка. Скорость роста в обоих случа х составл ет 1 мкм/с. При этом наблюдаетс высока адгези пленки к подложке.steel diamond film. The growth rate in both cases is 1 µm / s. In this case, a high adhesion of the film to the substrate is observed.
В качестве подложки могут быть использованы различные материалы: металлы, включа алюминий, сталь, титан и молибден; полупроводниковые материалы типа кремни и германи ; диэлектрики, такие как двуокись кремни , различные стекла, нитрид титана, оксид алюмини ; различные полимеры, включа полиэтилен, полиуретан , кремний- или фторорганические полимеры и другие материалы.Various materials can be used as the substrate: metals, including aluminum, steel, titanium and molybdenum; semiconductor materials such as silicon and germanium; dielectrics such as silicon dioxide, various glasses, titanium nitride, alumina; various polymers, including polyethylene, polyurethane, organosilicon or fluorine polymers and other materials.
Дл оптических окон могут быть использованы временные подложки из меди, золота и т.д.For optical windows, temporary substrates of copper, gold, etc. may be used.
По сравнению с известными данный способ позвол ет при высокой адгезии зна- 0 чительно (приблизительно на два пор дка) увеличить производительность процесса.Compared with the known methods, this method allows for high adhesion to significantly (approximately two orders of magnitude) increase the productivity of the process.
(56) J.Appl. Phys. 1991. v.68. № 11. р.5941- 5943.(56) J. Appl. Phys. 1991.v.68. No. 11. p. 5941-5943.
5 J.Appl. Phys. 1990, v.68, № 12, p.6187- 6190.5 J. Appl. Phys. 1990, v. 68, No. 12, p. 6187-6190.
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Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU5007516 RU2003200C1 (en) | 1991-11-01 | 1991-11-01 | Process of production of diamond and diamond-like films out of gaseous phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU5007516 RU2003200C1 (en) | 1991-11-01 | 1991-11-01 | Process of production of diamond and diamond-like films out of gaseous phase |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2003200C1 true RU2003200C1 (en) | 1993-11-15 |
Family
ID=21587950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU5007516 RU2003200C1 (en) | 1991-11-01 | 1991-11-01 | Process of production of diamond and diamond-like films out of gaseous phase |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2003200C1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9506143B2 (en) | 2009-09-11 | 2016-11-29 | Imott Inc. | Protective film and method for producing same |
-
1991
- 1991-11-01 RU SU5007516 patent/RU2003200C1/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9506143B2 (en) | 2009-09-11 | 2016-11-29 | Imott Inc. | Protective film and method for producing same |
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