RU2071938C1 - Method of silicon carbide producing - Google Patents
Method of silicon carbide producing Download PDFInfo
- Publication number
- RU2071938C1 RU2071938C1 RU93006323A RU93006323A RU2071938C1 RU 2071938 C1 RU2071938 C1 RU 2071938C1 RU 93006323 A RU93006323 A RU 93006323A RU 93006323 A RU93006323 A RU 93006323A RU 2071938 C1 RU2071938 C1 RU 2071938C1
- Authority
- RU
- Russia
- Prior art keywords
- silicon
- silicon carbide
- ammonia
- producing
- silicon nitride
- Prior art date
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 5
- 239000010439 graphite Substances 0.000 claims abstract description 5
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 230000003993 interaction Effects 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- 239000003153 chemical reaction reagent Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- Carbon And Carbon Compounds (AREA)
Abstract
Description
Изобретение относится к получению карбида кремния (SiO) высокой чистоты для полупроводниковой техники. The invention relates to the production of high purity silicon carbide (SiO) for semiconductor technology.
Известен способ получения карбида кремния взаимодействием тетрагалогенида кремния с аммиаком, обработкой образовавшегося нитрида кремния углеродсодержащим реагентом с последующим разделением продуктов реакции (1). A known method of producing silicon carbide by the interaction of silicon tetrahalide with ammonia, processing the formed silicon nitride with a carbon-containing reagent, followed by separation of the reaction products (1).
Недостатками известного способа являются то, что содержание примесей в карбиде кремния составляет 10-1-10-3 мас. что не удовлетворяет требованиям, предъявляемым к полупроводниковым материалам, а также сложность и энергоемкость.The disadvantages of this method are that the content of impurities in silicon carbide is 10 -1 -10 -3 wt. which does not satisfy the requirements for semiconductor materials, as well as complexity and energy intensity.
Задачей данного изобретения является получение карбида кремния полупроводниковой чистоты простым и экономичным способом. The objective of the invention is to obtain silicon carbide of semiconductor purity in a simple and economical way.
Поставленная задача решается тем, что в способе получения карбида кремния взаимодействием тетрагалогенида кремния с аммиаком при повышенной температуре, обработку полученного нитрида кремния также при повышенной температуре углеродсодержащим реагентом и последующее разделение продуктов реакции, согласно изобретению, в качестве тетрагалогенида кремния используют тетрафторид кремния, аммиак предварительно высушивают и их взаимодействие ведут при 1500oC, а в качестве углеродсодержащего реагента используют графит и обработку им нитрида кремния проводят при температуре 1800oC.The problem is solved in that in the method of producing silicon carbide by the interaction of silicon tetrahalide with ammonia at an elevated temperature, processing the obtained silicon nitride also at an elevated temperature with a carbon-containing reagent and the subsequent separation of the reaction products according to the invention, silicon tetrafluoride is used as silicon tetrahalide, the ammonia is preliminarily dried and their interaction are at 1500 o C, as well as a carbonaceous reactant used graphite and processing them nitri and silicon is conducted at a temperature of 1800 o C.
Пример. Исходное сырье: тетрафторид кремния, высушенный аммиак, графит. При температуре 1500oC осуществляют реакцию синтеза нитрида кремния:
3SiF4+4NH3___→ Si3N4+12 HF
Затем при температуре 1800oC получают карбид кремния из нитрида по реакции:
Si3N4+3C ___→ 3SiC+2N2
На 1 кг тетрафторида кремния подают 0,242 кг аммиака (~ 10% избыток); на 1 кг нитрида кремния подают 0,28 кг графита (~ 10% избыток). Для разделения газовой смеси продуктов реакции получения нитрида кремния (аммиака и фтористого водорода) ее подают в холодильник, работающий при температуре от 0 до 15oC. При этом фтористый водород переходит в жидкое состояние и отделяется от аммиака, находящегося в газообразном состоянии.Example. Feedstock: silicon tetrafluoride, dried ammonia, graphite. At a temperature of 1500 o C carry out the reaction of synthesis of silicon nitride:
3SiF 4 + 4NH 3 ___ → Si 3 N 4 +12 HF
Then, at a temperature of 1800 o C receive silicon carbide from nitride by the reaction:
Si 3 N 4 + 3C ___ → 3SiC + 2N 2
0.242 kg of ammonia is fed per 1 kg of silicon tetrafluoride (~ 10% excess); 0.28 kg of graphite (~ 10% excess) are fed per 1 kg of silicon nitride. To separate the gas mixture of the reaction products of obtaining silicon nitride (ammonia and hydrogen fluoride), it is fed into a refrigerator operating at a temperature of 0 to 15 o C. In this case, hydrogen fluoride goes into a liquid state and is separated from ammonia in a gaseous state.
Выход реакции получения карбида кремния из тетрафторида составлял 99,5% содержание примесей не превышает 10-6-10-7 мас. что соответствует требованиям, предъявляемым к полупроводниковым материалам. Способ прост и экономичен.The reaction yield of silicon carbide from tetrafluoride was 99.5%; the content of impurities does not exceed 10 -6 -10 -7 wt. which meets the requirements for semiconductor materials. The method is simple and economical.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU93006323A RU2071938C1 (en) | 1993-02-03 | 1993-02-03 | Method of silicon carbide producing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU93006323A RU2071938C1 (en) | 1993-02-03 | 1993-02-03 | Method of silicon carbide producing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU93006323A RU93006323A (en) | 1995-03-27 |
| RU2071938C1 true RU2071938C1 (en) | 1997-01-20 |
Family
ID=20136664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU93006323A RU2071938C1 (en) | 1993-02-03 | 1993-02-03 | Method of silicon carbide producing |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2071938C1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2156220C1 (en) * | 1999-05-26 | 2000-09-20 | Карелин Александр Иванович | Method of preparing metallic silicon solution, method of recovering metallic silicon from solution, and metallic silicon obtained by these methods, method of preparing ceramic materials, and ceramic material obtained by this method |
| RU2767270C1 (en) * | 2021-08-25 | 2022-03-17 | Кирилл Борисович ИГНАТЬЕВ | Method for obtaining silicon carbide |
-
1993
- 1993-02-03 RU RU93006323A patent/RU2071938C1/en active
Non-Patent Citations (1)
| Title |
|---|
| Заявка Японии N 62-36100, кл. С 3О В 29/62, 1987. * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2156220C1 (en) * | 1999-05-26 | 2000-09-20 | Карелин Александр Иванович | Method of preparing metallic silicon solution, method of recovering metallic silicon from solution, and metallic silicon obtained by these methods, method of preparing ceramic materials, and ceramic material obtained by this method |
| RU2767270C1 (en) * | 2021-08-25 | 2022-03-17 | Кирилл Борисович ИГНАТЬЕВ | Method for obtaining silicon carbide |
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