RU1808254C - Method for growing berry plants on terraces - Google Patents
Method for growing berry plants on terracesInfo
- Publication number
- RU1808254C RU1808254C SU4870158A RU1808254C RU 1808254 C RU1808254 C RU 1808254C SU 4870158 A SU4870158 A SU 4870158A RU 1808254 C RU1808254 C RU 1808254C
- Authority
- RU
- Russia
- Prior art keywords
- vertical wall
- terraces
- growing
- terrace
- wall
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 4
- 235000021028 berry Nutrition 0.000 title 1
- 235000003145 Hippophae rhamnoides Nutrition 0.000 claims abstract description 4
- 239000002689 soil Substances 0.000 claims abstract description 3
- 241000196324 Embryophyta Species 0.000 claims abstract 5
- 240000000950 Hippophae rhamnoides Species 0.000 claims abstract 2
- 238000000926 separation method Methods 0.000 claims abstract 2
- 235000013399 edible fruits Nutrition 0.000 claims description 2
- 230000008774 maternal effect Effects 0.000 claims 1
- 238000003898 horticulture Methods 0.000 abstract 1
- 241000229143 Hippophae Species 0.000 description 2
- 230000012010 growth Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010413 gardening Methods 0.000 description 1
- 230000002786 root growth Effects 0.000 description 1
Landscapes
- Cultivation Of Plants (AREA)
Abstract
Использование: в горном садоводстве при выращивании сельскохоз йственных культур на террасах. Сущность изобретени : при выращивании облепихи на террасах после посадки саженца его корневую систему, формируют вдоль вертикальной стенки. Дл этого почву по обе стороны от куста перекапывают на глубину до 30 см вдоль вертикальной стенки. После по влени корневых отводков последние выращивают без отделени от материнского растени . При достижении ими высоты вертикальной стенки надземную часть укорен ют в вертикальной стенке аналогично материнскому растению.Usage: in mountain horticulture when growing agricultural crops on terraces. SUMMARY OF THE INVENTION: When sea buckthorn is grown on terraces after planting a seedling, its root system is formed along a vertical wall. To do this, the soil on both sides of the bush is dug to a depth of 30 cm along the vertical wall. After the appearance of root branches, the latter are grown without separation from the mother plant. When they reach the height of the vertical wall, the aerial part is rooted in the vertical wall similarly to the mother plant.
Description
Изобретение относитс к сельскому хоз йству , а точнее к горному садоводству с террасным исполнением.The invention relates to agriculture, and more specifically to terraced mountain gardening.
Цель насто щего изобретени - повышение эффективности способа за счет создани плодовой стенки при выращивании облепихи.The purpose of the present invention is to increase the efficiency of the method by creating a fruit wall during the cultivation of sea buckthorn.
Цель достигаетс тем, что после посадки саженца начинают формировать корневую систему путем перекопки вдоль границы террасы параллельновертикальной стенке по обе стороны от саженца, а поросль при достижении требуемой высоты укорен ем в вертикальную стенку террасы.The goal is achieved by the fact that after planting a seedling, they begin to form a root system by digging a parallel-vertical wall along both sides of the seedling along the terrace border, and when we reach the desired height, we root it into the vertical wall of the terrace.
Пример. Саженец высаживают вплотную к вертикальной стенке. С этого же сезона весной или осенью, начинают перекопку вдоль границы горизонтального полотна и вертикальной стенки террасы на рассто нии посаженного саженца. Корни, отход щие в сторону при перекопке срезают и рост оставленных корней происходит вдоль границы террас. Из травмированных корней прорастает поросль. Оставив требуемое количество , дождавшись их роста на уровни вертикальной стенки террасы, укорен ют ствол саженца в стенку террасы.Example. The seedling is planted close to the vertical wall. From the same season, in spring or autumn, they begin digging along the border of the horizontal leaf and the vertical wall of the terrace at the distance of the planted seedling. Roots going to the side during digging are cut off and the growth of the left roots occurs along the boundary of the terraces. From the injured roots sprout sprouts. Leaving the required amount, waiting for their growth to the levels of the vertical wall of the terrace, root the seedling trunk into the wall of the terrace.
В результате освобождаетс основное полотно террасы под другие культуры.As a result, the main terrace sheet for other crops is freed.
Таким образом, производит уплотнение выращиваемых культур на террасах, а при обработке почвы не травмируем основание корни облепихи.Thus, it makes densification of cultivated crops on the terraces, and when processing the soil we do not injure the base of the roots of sea buckthorn.
На границе же террас более благопри тные услови дл роста корней.At the boundary of the terraces, more favorable conditions for root growth are found.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU4870158 RU1808254C (en) | 1990-10-01 | 1990-10-01 | Method for growing berry plants on terraces |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU4870158 RU1808254C (en) | 1990-10-01 | 1990-10-01 | Method for growing berry plants on terraces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU1808254C true RU1808254C (en) | 1993-04-15 |
Family
ID=21538270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU4870158 RU1808254C (en) | 1990-10-01 | 1990-10-01 | Method for growing berry plants on terraces |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU1808254C (en) |
-
1990
- 1990-10-01 RU SU4870158 patent/RU1808254C/en active
Non-Patent Citations (1)
| Title |
|---|
| Авторское свидетельство СССР №1701172, кл. А 01 G 1/00,1989. * |
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