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PL3371833T3 - Urządzenie fotowoltaiczne i sposób jego wytwarzania - Google Patents

Urządzenie fotowoltaiczne i sposób jego wytwarzania

Info

Publication number
PL3371833T3
PL3371833T3 PL16788549.0T PL16788549T PL3371833T3 PL 3371833 T3 PL3371833 T3 PL 3371833T3 PL 16788549 T PL16788549 T PL 16788549T PL 3371833 T3 PL3371833 T3 PL 3371833T3
Authority
PL
Poland
Prior art keywords
manufacturing
same
photovoltaic device
photovoltaic
Prior art date
Application number
PL16788549.0T
Other languages
English (en)
Inventor
Bertrand PAVIET-SALOMON
Andrea TOMASI
Matthieu Despeisse
Christophe Ballif
Original Assignee
CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement filed Critical CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement
Publication of PL3371833T3 publication Critical patent/PL3371833T3/pl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/10Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
PL16788549.0T 2015-11-02 2016-11-01 Urządzenie fotowoltaiczne i sposób jego wytwarzania PL3371833T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15192655.7A EP3163632A1 (en) 2015-11-02 2015-11-02 Photovoltaic device and method for manufacturing the same
PCT/EP2016/076301 WO2017076832A1 (en) 2015-11-02 2016-11-01 Photovoltaic device and method for manufacturing the same

Publications (1)

Publication Number Publication Date
PL3371833T3 true PL3371833T3 (pl) 2025-06-02

Family

ID=54365170

Family Applications (1)

Application Number Title Priority Date Filing Date
PL16788549.0T PL3371833T3 (pl) 2015-11-02 2016-11-01 Urządzenie fotowoltaiczne i sposób jego wytwarzania

Country Status (7)

Country Link
US (1) US11251325B2 (pl)
EP (2) EP3163632A1 (pl)
JP (1) JP7126444B2 (pl)
CN (1) CN108352420B (pl)
ES (1) ES3015413T3 (pl)
PL (1) PL3371833T3 (pl)
WO (1) WO2017076832A1 (pl)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7202456B2 (ja) * 2019-04-23 2023-01-11 株式会社カネカ 太陽電池および太陽電池の製造方法
EP3770975B1 (en) * 2019-07-26 2021-11-24 Meyer Burger (Germany) GmbH Photovoltaic device and method for manufacturing the same
EP3886185A1 (en) * 2020-03-27 2021-09-29 Meyer Burger GmbH Photovoltaic device and method for manufacturing the same
CN111816731B (zh) * 2020-07-10 2022-03-29 普乐新能源科技(徐州)有限公司 一种制作hbc电池背面掺杂非晶硅的方法
EP3989294A1 (en) * 2020-10-22 2022-04-27 Meyer Burger (Germany) GmbH Photovoltaic device and method for manufacturing the same
CN113964216B (zh) * 2021-09-22 2023-10-27 泰州隆基乐叶光伏科技有限公司 一种背接触电池及其制作方法
NL2033406B1 (en) * 2022-10-27 2024-05-17 Univ Delft Tech Simplified processing of interdigitated-back-contacted silicon heterojunction solar cells
CN116722053B (zh) * 2023-08-09 2023-10-27 天合光能股份有限公司 太阳能电池及其制备方法、光伏组件
GB202319434D0 (en) * 2023-12-18 2024-01-31 Rec Solar Pte Ltd Solar cell and method of manufacturing a solar cell
CN117690982A (zh) * 2023-12-28 2024-03-12 浙江晶科能源有限公司 太阳能电池及光伏组件

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JP2003298078A (ja) 2002-03-29 2003-10-17 Ebara Corp 光起電力素子
US6974976B2 (en) * 2002-09-30 2005-12-13 Miasole Thin-film solar cells
JP4118187B2 (ja) 2003-05-09 2008-07-16 信越半導体株式会社 太陽電池の製造方法
JP3998619B2 (ja) * 2003-09-24 2007-10-31 三洋電機株式会社 光起電力素子およびその製造方法
CN100431177C (zh) * 2003-09-24 2008-11-05 三洋电机株式会社 光生伏打元件及其制造方法
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
FR2880989B1 (fr) 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US20070137692A1 (en) * 2005-12-16 2007-06-21 Bp Corporation North America Inc. Back-Contact Photovoltaic Cells
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
DE102006042617B4 (de) 2006-09-05 2010-04-08 Q-Cells Se Verfahren zur Erzeugung von lokalen Kontakten
SG175041A1 (en) * 2009-03-30 2011-11-28 Sanyo Electric Co Solar cell
US20110143489A1 (en) * 2009-12-11 2011-06-16 General Electric Company Process for making thin film solar cell
US8592230B2 (en) * 2010-04-22 2013-11-26 Varian Semiconductor Equipment Associates, Inc. Method for patterning a substrate using ion assisted selective depostion
US8633379B2 (en) * 2010-08-17 2014-01-21 Lg Electronics Inc. Solar cell
WO2012090643A1 (ja) * 2010-12-29 2012-07-05 三洋電機株式会社 太陽電池の製造方法及び太陽電池
CN103035779A (zh) 2011-10-06 2013-04-10 三星Sdi株式会社 光伏装置
FR2985608B1 (fr) 2012-01-05 2016-11-18 Commissariat Energie Atomique Cellule photovoltaique et procede de realisation
KR101977927B1 (ko) 2012-07-11 2019-05-13 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 광전소자 및 그 제조방법
JP5971499B2 (ja) 2012-07-26 2016-08-17 パナソニックIpマネジメント株式会社 太陽電池及びその製造方法
CN102931269A (zh) 2012-11-29 2013-02-13 山东力诺太阳能电力股份有限公司 基于n型硅衬底背接触式hit太阳电池结构和制备方法
JP6013200B2 (ja) 2013-01-09 2016-10-25 シャープ株式会社 光電変換素子および光電変換素子の製造方法
US9640699B2 (en) 2013-02-08 2017-05-02 International Business Machines Corporation Interdigitated back contact heterojunction photovoltaic device

Also Published As

Publication number Publication date
CN108352420B (zh) 2022-11-18
EP3371833A1 (en) 2018-09-12
EP3163632A1 (en) 2017-05-03
EP3371833C0 (en) 2025-01-01
US11251325B2 (en) 2022-02-15
ES3015413T3 (en) 2025-05-05
CN108352420A (zh) 2018-07-31
WO2017076832A1 (en) 2017-05-11
JP2018532273A (ja) 2018-11-01
US20180309010A1 (en) 2018-10-25
EP3371833B1 (en) 2025-01-01
JP7126444B2 (ja) 2022-08-26

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