PL2157205T3 - Proces impulsowego rozpylania magnetronowego o dużej mocy oraz źródło energii elektrycznej o dużej mocy - Google Patents
Proces impulsowego rozpylania magnetronowego o dużej mocy oraz źródło energii elektrycznej o dużej mocyInfo
- Publication number
- PL2157205T3 PL2157205T3 PL09159717T PL09159717T PL2157205T3 PL 2157205 T3 PL2157205 T3 PL 2157205T3 PL 09159717 T PL09159717 T PL 09159717T PL 09159717 T PL09159717 T PL 09159717T PL 2157205 T3 PL2157205 T3 PL 2157205T3
- Authority
- PL
- Poland
- Prior art keywords
- pulse
- power
- time
- energy source
- electrical energy
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000001755 magnetron sputter deposition Methods 0.000 title abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08161322 | 2008-07-29 | ||
| EP09159717A EP2157205B1 (en) | 2008-07-29 | 2009-05-08 | A high-power pulsed magnetron sputtering process as well as a high-power electrical energy source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL2157205T3 true PL2157205T3 (pl) | 2012-04-30 |
Family
ID=39892270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL09159717T PL2157205T3 (pl) | 2008-07-29 | 2009-05-08 | Proces impulsowego rozpylania magnetronowego o dużej mocy oraz źródło energii elektrycznej o dużej mocy |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9551066B2 (pl) |
| EP (1) | EP2157205B1 (pl) |
| JP (2) | JP6042048B2 (pl) |
| AT (1) | ATE535629T1 (pl) |
| PL (1) | PL2157205T3 (pl) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9249498B2 (en) | 2010-06-28 | 2016-02-02 | Micron Technology, Inc. | Forming memory using high power impulse magnetron sputtering |
| JP5765627B2 (ja) * | 2010-09-27 | 2015-08-19 | 日立金属株式会社 | 耐久性に優れる被覆工具およびその製造方法 |
| BRPI1102336B1 (pt) * | 2011-05-27 | 2021-01-12 | Mahle Metal Leve S/A | elemento dotado de pelo menos uma superfície de deslizamento para uso em um motor de combustão |
| BRPI1102335A2 (pt) | 2011-05-27 | 2013-06-25 | Mahle Metal Leve Sa | elemento dotado de pelo menos uma superfÍcie de deslizamento com um revestimento para uso em um motor de combustço interna ou em um compressor |
| US20150184284A1 (en) * | 2012-06-29 | 2015-07-02 | Oerlikon Advanced Technologies Ag | Method of coating by pulsed bipolar sputtering |
| DE102012107163A1 (de) | 2012-08-03 | 2014-05-15 | INI Coatings Ltd. | Verfahren zur Beschichtung eines Substrats mittels Hochenergieimpulsmagnetronsputtern |
| CN105102671B (zh) | 2013-02-08 | 2020-08-07 | 瑞士艾发科技 | Hipims溅射的方法和hipims溅射系统 |
| DE102013106351A1 (de) | 2013-06-18 | 2014-12-18 | Innovative Ion Coatings Ltd. | Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche |
| PL3013996T3 (pl) | 2013-06-26 | 2017-10-31 | Oerlikon Surface Solutions Ag Pfaeffikon | Sposób wytwarzania dekoracyjnych warstw twardego materiału za pomocą HIPIMS |
| ES2630316T5 (es) * | 2013-07-03 | 2021-06-18 | Oerlikon Surface Solutions Ag Pfaeffikon | Procedimiento para la producción de capas de TixSi1-xN |
| JP2016084508A (ja) * | 2014-10-27 | 2016-05-19 | 株式会社アルバック | 金属膜成膜方法 |
| US9812305B2 (en) * | 2015-04-27 | 2017-11-07 | Advanced Energy Industries, Inc. | Rate enhanced pulsed DC sputtering system |
| US11049702B2 (en) | 2015-04-27 | 2021-06-29 | Advanced Energy Industries, Inc. | Rate enhanced pulsed DC sputtering system |
| TWI575119B (zh) * | 2015-04-28 | 2017-03-21 | 遠東科技大學 | 鋁基鍋具之導磁層加工方法 |
| US10566177B2 (en) * | 2016-08-15 | 2020-02-18 | Applied Materials, Inc. | Pulse shape controller for sputter sources |
| RU2649904C1 (ru) * | 2016-11-18 | 2018-04-05 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "МГТУ "СТАНКИН") | Устройство для синтеза и осаждения металлических покрытий на токопроводящих изделиях |
| KR20180135853A (ko) * | 2017-05-10 | 2018-12-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스형 dc 전력 공급부 |
| EP3639356B1 (en) * | 2017-06-12 | 2025-12-17 | Starfire Industries, LLC | Pulsed power module with pulse and ion flux control for magnetron sputtering |
| KR102141684B1 (ko) | 2018-08-24 | 2020-09-14 | 한국원자력연구원 | 전류 펄스를 제어하는 모듈레이터 및 그 방법 |
| SE542881C2 (en) * | 2018-12-27 | 2020-08-04 | Nils Brenning | Ion thruster and method for providing thrust |
| CN113474482B (zh) * | 2019-02-25 | 2025-07-15 | 星火工业有限公司 | 用于事故耐受核燃料、粒子加速器、和航空航天前沿的金属和陶瓷纳米涂层的方法和设备 |
| CN114597109B (zh) * | 2020-12-07 | 2025-05-27 | 中国科学院大连化学物理研究所 | 平面射频感性耦合放电等离子体加强型吸气剂装置 |
| EP4531074A1 (en) * | 2023-09-29 | 2025-04-02 | Centre National de la Recherche Scientifique | Fast high voltage for ionization improvement for sputtering process |
| WO2025225652A1 (ja) * | 2024-04-23 | 2025-10-30 | パナソニックIpマネジメント株式会社 | 評価システム、評価方法、プログラム |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3700633C2 (de) | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
| DE4127317C2 (de) * | 1991-08-17 | 1999-09-02 | Leybold Ag | Einrichtung zum Behandeln von Substraten |
| DE4233720C2 (de) * | 1992-10-07 | 2001-05-17 | Leybold Ag | Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen |
| JP3684593B2 (ja) * | 1993-07-28 | 2005-08-17 | 旭硝子株式会社 | スパッタリング方法およびその装置 |
| EP0905273B1 (en) * | 1993-07-28 | 2002-10-16 | Asahi Glass Company Ltd. | Method for producing films |
| JPH0853760A (ja) | 1993-07-28 | 1996-02-27 | Asahi Glass Co Ltd | 酸化ケイ素膜の製造方法 |
| SG46607A1 (en) * | 1993-07-28 | 1998-02-20 | Asahi Glass Co Ltd | Method of an apparatus for sputtering |
| DE19610012B4 (de) * | 1996-03-14 | 2005-02-10 | Unaxis Deutschland Holding Gmbh | Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre |
| SE9704607D0 (sv) | 1997-12-09 | 1997-12-09 | Chemfilt R & D Ab | A method and apparatus for magnetically enhanced sputtering |
| JP4120974B2 (ja) * | 1997-06-17 | 2008-07-16 | キヤノンアネルバ株式会社 | 薄膜作製方法および薄膜作製装置 |
| SE525231C2 (sv) * | 2001-06-14 | 2005-01-11 | Chemfilt R & D Ab | Förfarande och anordning för att alstra plasma |
| JP2003022524A (ja) * | 2001-07-06 | 2003-01-24 | National Institute Of Advanced Industrial & Technology | 磁気記録材料用基板の製造方法及び磁気記録材料 |
| JP2003073814A (ja) * | 2001-08-30 | 2003-03-12 | Mitsubishi Heavy Ind Ltd | 製膜装置 |
| US7147759B2 (en) * | 2002-09-30 | 2006-12-12 | Zond, Inc. | High-power pulsed magnetron sputtering |
| SE0402644D0 (sv) | 2004-11-02 | 2004-11-02 | Biocell Ab | Method and apparatus for producing electric discharges |
| JP2007162100A (ja) * | 2005-12-15 | 2007-06-28 | Asahi Glass Co Ltd | スパッタリング成膜方法 |
| WO2007121954A1 (de) * | 2006-04-21 | 2007-11-01 | Cemecon Ag | Beschichteter körper |
| GB0608582D0 (en) * | 2006-05-02 | 2006-06-07 | Univ Sheffield Hallam | High power impulse magnetron sputtering vapour deposition |
| TWI476289B (zh) * | 2006-12-12 | 2015-03-11 | Oerlikon Advanced Technologies Ag | 在高能脈衝磁管噴濺中之消弧及產生脈波 |
-
2009
- 2009-05-08 PL PL09159717T patent/PL2157205T3/pl unknown
- 2009-05-08 AT AT09159717T patent/ATE535629T1/de active
- 2009-05-08 EP EP09159717A patent/EP2157205B1/en active Active
- 2009-06-01 JP JP2009131896A patent/JP6042048B2/ja active Active
- 2009-07-28 US US12/510,543 patent/US9551066B2/en active Active
-
2015
- 2015-03-11 JP JP2015047806A patent/JP2015148015A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP2157205B1 (en) | 2011-11-30 |
| US9551066B2 (en) | 2017-01-24 |
| US20100236919A1 (en) | 2010-09-23 |
| JP6042048B2 (ja) | 2016-12-14 |
| JP2010031359A (ja) | 2010-02-12 |
| JP2015148015A (ja) | 2015-08-20 |
| ATE535629T1 (de) | 2011-12-15 |
| EP2157205A1 (en) | 2010-02-24 |
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