[go: up one dir, main page]

KR960701236A - 필름 및 코우팅의 연소 화학적 증기 증착을 위한 방법 및 장치(method and apparatus for the combustion chemical vapor deposition of films and coatings) - Google Patents

필름 및 코우팅의 연소 화학적 증기 증착을 위한 방법 및 장치(method and apparatus for the combustion chemical vapor deposition of films and coatings) Download PDF

Info

Publication number
KR960701236A
KR960701236A KR1019950704075A KR19950704075A KR960701236A KR 960701236 A KR960701236 A KR 960701236A KR 1019950704075 A KR1019950704075 A KR 1019950704075A KR 19950704075 A KR19950704075 A KR 19950704075A KR 960701236 A KR960701236 A KR 960701236A
Authority
KR
South Korea
Prior art keywords
reagent
coating
support
combustion
reagent mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019950704075A
Other languages
English (en)
Other versions
KR100323216B1 (ko
Inventor
티이. 헌트 앤드류
케이. 코크란 조오
브렌트 카아터 윌리엄
Original Assignee
배리 로젠버어그
조오지아 테크 리서어치 코오포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21889243&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR960701236(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 배리 로젠버어그, 조오지아 테크 리서어치 코오포레이션 filed Critical 배리 로젠버어그
Publication of KR960701236A publication Critical patent/KR960701236A/ko
Application granted granted Critical
Publication of KR100323216B1 publication Critical patent/KR100323216B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • C30B25/105Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/405Oxides of refractory metals or yttrium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/408Oxides of copper or solid solutions thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/409Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/225Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02TCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00Aeronautics or air transport
    • Y02T50/60Efficient propulsion technologies, e.g. for aircraft

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

시약 및 부형제 용액을 함께 혼합하여 시약 혼합물을 형성하고, 시약 혼합물을 점화하여 불꽃을 발생시키거나, 시약이 적어도 부분적으로는 증기상으로 증기화되는 플라즈마 토오치를 통해 시약 혼합물을 유동시키고, 상기 시약의 증기상을 지지체에 접촉시켜, 지지체상에 바람직한 배향을 가지도록 조절될 수 있는 상기 시약의 코우팅의 (적어도 일부분은 증기상으로부터의) 증착을 초래함으로써 지지체로 코우팅을 적용하는 방법, 및 상기 방법을 수행하는 장치, 상기 도면은 지지체(22)를 내부 불꽃(18a) 내지 외부 불꽃(18b) 사이에 Smithell 분리기(30)의 환원 영역(32)내 위치시킬 수 있는 CCVD 장치의 개략도를 나타낸다.

Description

필름 및 코우팅의 연소 화학적 증기 증착을 위한 방법 및 장치(METHOD AND APPARATUS FOR THE COMBUSTION CHEMICAL VAPOR DEPOSITION OF FILMS AND COATINGS)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 연소 화학 증기 증착 장치의 개략도.

Claims (43)

  1. 하기 단계로 구성되는 화학적 증기 증착을 사용하여 지지체에 코우팅을 적용하는 방법: (a) 코우팅될 하나 이상의 표면을 갖는 지지체를 제공하는 단계; (b) 시약 및 부형제 용액을 선택하고 상기 시약 및 상기 부형재 용액을 함께 혼합하여 시약 혼합물을 형성하는 단계; (c) 연소 수단을 제공하는 단계; (d) 상기 시약 혼합물을 상기 연소 수단에 혼입시키고, 상기 시약 혼합물을 연소시켜 불꽃을 발생시키고 적어도 상기 시약의 일부를 증기상으로 증기화시키는 단계; 및 (e) 상기 시약의 상기 증기상을 상기 지지체와 접촉시켜 상기 지지체상에 코우팅의 상기 증기상의 증착을 초래하는 단계.
  2. 제1항에 있어서, 산화제를 상기 연소 수단에 공급하여 상기 시약 혼합물의 연소를 돕는 방법.
  3. 제2항에 있어서, 상기 코우팅이 결정형 무기 필름인 방법.
  4. 제2항에 있어서, 상기 시약 혼합물이 액체 용액이고, 상기 코우팅이 비-결정형 무기 필름인 방법.
  5. 제2항에 있어서, 상기 시약 혼합물이 가연성인 방법.
  6. 제3항에 있어서, 가연송 연료를 상기 연소 수단에 공급하여 상기 시약 혼합물의 상기 연소에 연료를 공급하는 방법.
  7. 제4항에 있어서, 가연성 연료를 상기 경소 수단에 공급하여 상기 시약 혼합물의 상기 연소에 연료를 공급하는 방법.
  8. 제3항에 있어서, 상기 부형제 용액이 유기 용매인 방법.
  9. 제4항에 있어서, 상기 부형제 용액이 유기 용매인 방법.
  10. 제3항에 있어서, 상기 시약이 기체상, 증기상 또는 액상이며, 상기 부형제 용액이 기체상, 증기상 또는 액상인 방법.
  11. 제4항에 있어서, 상기 시약이 기체상, 증기상 또는 액상이며, 상기 부형제 용액이 기체상, 증기상 또는 액상인 방법.
  12. 제10항에 있어서, 상기 시약 혼합물이 액체 용액이며, 상기 증기상이 본질적으로 상기 시약의 증기로 구성되는 방법.
  13. 제12항에 있어서, 상기 코우팅이 증착되고 스프레이 열분해 증착된 상기 시약의 필름으로 구성되는 방법.
  14. 제13항에 있어서, 상기 코우팅이 본질적으로 스프레이 열분해 증착된 상기 시약의 필름으로 구성되는 방법.
  15. 제8항에 있어서, 상기 시약 혼합물이 상기 시약의 고체 입자로 구성된 액체 용액이며, 상기 증기는 상기 시약의 증기 및 상기 시약의 고체 입자로 구성되는 방법.
  16. 제12항에 있어서, 상기 코오팅이 본질적으로 상기 시약으로 구성된 비균질하게 핵생성된 필름인 방법.
  17. 제15항에 있어서, 상기 코우팅이 상기 시약의 고체 입자 및 상기 시약으로 구성된 필름인 방법.
  18. 제17항에 있어서, 상기 코우팅이 약 50부피% 미만의 상기 고체로 구성되는 방법.
  19. 제8항에 있어서, 상기 코우팅이 두께가 약 1000 미크론 미만인 방법.
  20. 제19항에 있어서, 상기 코우팅이 상기 두께가 약 100 미크론 미만인 방법.
  21. 제1항에 있어서, 상기 지지체가 거의 상기 시약 혼합물의 연소로 발생된 연소열로 가열되는 방법.
  22. 제1항에 있어서, 상기 지지체가 거의 이차 열원으로 가열되는 방법.
  23. 제8항에 있어서, 상기 코우팅이 산화되는 고온 환경에서 안정한 방법.
  24. 제8항에 있어서, 상기 코우팅이 산화하는 고온 환경에서 안정하지 않은 방법.
  25. 제23항에 있어서, 시악 시약이 금속유기 화합물로 구성된 군으로부터 선택되는 방법.
  26. 제24항에 있어서, 부가의 반응물을 상기 연소 수단의 상기 불꽃 바로 위에 공급하는 방법.
  27. 제8항에 있어서, 상기 시약 혼합물이 부가로 상기 코우팅과 함께 상기 지지체 상에 부착된 비-반응성 입자로 구성되는 방법.
  28. 제27항에 있어서, 상기 비-반응성 입자가 상기 지지체에 부딪힐 때 용융되는 방법.
  29. 제1항에 있어서, 상기 불꽃이 약 300℃내지 2800℃사이의 온도를 가지며, 상기 지지체가 약 100℃ 내지 2200℃사이의 표면 온도를 가지며, 상기 증착이 약 10 torr 내지 10,000 torr 사이의 압력에서 발생하는 방법.
  30. 제29항에 있어서, 상기 코우팅이 약 0.1㎛/hr-1000㎛/hr 사이의 증착 속도로 상기 지지체 상에 증착되는 방법.
  31. 제30항에 있어서, 상기 지지체가 약 400℃내지 1300℃사이의 표면 온도를 가지는 방법.
  32. 제4항에 있어서, 상기 코우팅이 두께가 약 1밀리미터 미만인 방법.
  33. 제32항에 있어서, 상기 불꽃이 약 300℃ 내지 2800℃ 사이의 온도를 가지며, 상기 지지체가 약 100℃내지 1500℃ 사이의 표면 온도를 가지며, 상기 증착이 약 10 tor 내지 10,000 torr 사이의 압력에서 발생하는 방법.
  34. 제33항에 있어서, 상기 코우팅이 약 0.1㎛/hr-1000㎛/hr 사이의 증착 속도로 상기 지지체 상에 증착되는 방법.
  35. 제34항에 있어서, 상기 지지체가 약 400 내지 1300℃사이의 표면 온도를 가지는 방법.
  36. 하기 단계로 구성되는 화학적 증기 증착을 사용하여 지지체에 코우팅을 적용하는 방법: (a) 코우팅될 하나 이상의 표면을 갖는 지지체를 제공하는 단계; (b) 시약 및 부형제 용액을 선택하고 상기 시약 및 상기 부형제 용액을 함께 혼합하여 시약 혼합물을 형성하는 단계; (c) 플라즈마 생산 수단을 제공하는 단계; (d) 상기 시약 혼합물을 상기 플라즈마 생산 수단에 혼입시킴으로써 적어도 상기 시약의 일부를 플라즈마 증기상으로 증기화시키는 단계; 및 (e) 상기 시약의 상기 플라즈마 증기상을 상기 지지체와 접촉시켜 상기 지지체 상에 코우팅의 상기 플라즈마 증기상의 증착을 초래하는 단계.
  37. 제36항에 있어서, 상기 시약이 기체상, 증기상 또는 액상이며, 상기 부형제 용액이 기체상, 증기상 또는 액상인 방법.
  38. 제37항에 있어서, 상기 시약 혼합물이 액체 용액이며, 상기 플라즈마 증기상이 본질적으로 상기 시약의 증기로 구성되는 방법.
  39. 제38항에 있어서, 상기 플라즈마 증기상이 약 800℃ 내지 3500℃ 사이의 온도를 가지는 방법.
  40. 불꽃을 사용하는 주변 조건하에 연소 화학적 증기 증착을 사용하여 지지체에 코우팅을 적용하는 장치로서 하기로 구성되는 장치; (a) 연소 수단; (b) 상기 연소수단에 시약 혼합물을 공급하는 공급 수단; (c) 상기 시약 혼합물을 점화시키는 점화 수단; (d) 지지체를 사익 연소 수단에 아주 인접하게 지지시킴으로써 상기 지지체가 상기 시약 혼합물을 점화시켜 초래되는 연소 생산물이 통과하는 영역내에 지지되는 지지 수단.
  41. 제40항에 있어서, 부가로 상기 연소 수단에 산화제를 공급하는 수단으로 구성되는 장치.
  42. 불꽃을 사용하는 주변 조건하에 연소 화학적 증기 증착과 함께 사용하기 위한 지지체에 무기 산화물 코우팅을 적용하는 장치로서, 가연성 시약 혼합물을 보유하는 보유 수단, 상기 보유 수단으로부터 상기 시약 혼합물을 방출시키는 출구 수단, 상기 출구 수단을 통해 상기 보유 수단으로부터 상기 시약 혼합물을 추진시키는 추진수단, 및 상기 시약 혼합물을 점화시키는 점화 수단으로 구성되는 장치.
  43. 제42항에 있어서, 상기 장치가 한 사람이 손에 잡고 사용할 수 있는 크기 및 구조인 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950704075A 1993-03-24 1994-03-24 필름및코우팅의연소화학적증기증착을위한방법 Expired - Lifetime KR100323216B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US3655493A 1993-03-24 1993-03-24
US08/036,554 1993-03-24
US08/036554 1993-03-24
PCT/US1994/003193 WO1994021841A1 (en) 1993-03-24 1994-03-24 Method and apparatus for the combustion chemical vapor deposition of films and coatings

Publications (2)

Publication Number Publication Date
KR960701236A true KR960701236A (ko) 1996-02-24
KR100323216B1 KR100323216B1 (ko) 2002-07-03

Family

ID=21889243

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950704075A Expired - Lifetime KR100323216B1 (ko) 1993-03-24 1994-03-24 필름및코우팅의연소화학적증기증착을위한방법

Country Status (10)

Country Link
US (3) US5652021A (ko)
EP (1) EP0689618B1 (ko)
JP (1) JP3519406B2 (ko)
KR (1) KR100323216B1 (ko)
AT (1) ATE233327T1 (ko)
AU (1) AU6415294A (ko)
CA (1) CA2158568C (ko)
DE (1) DE69432175T2 (ko)
ES (1) ES2193156T3 (ko)
WO (1) WO1994021841A1 (ko)

Families Citing this family (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858465A (en) * 1993-03-24 1999-01-12 Georgia Tech Research Corporation Combustion chemical vapor deposition of phosphate films and coatings
ATE342154T1 (de) * 1995-08-04 2006-11-15 Ngimat Co Chemischen gasphasenabscheidung und pulverbildung mittels einer thermischen spritzmethode aus beinahe superkitischen und superkritischen flussigkeitlösungen
EP0866885A4 (en) 1995-11-13 2000-09-20 Univ Connecticut NANOSTRUCTURE PRODUCTS FOR THERMAL SPRAYING
US6447848B1 (en) * 1995-11-13 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Nanosize particle coatings made by thermally spraying solution precursor feedstocks
JP2999751B2 (ja) * 1997-06-27 2000-01-17 三星電子株式会社 シリカ膜の製造装置及びその製造方法
US7575784B1 (en) 2000-10-17 2009-08-18 Nanogram Corporation Coating formation by reactive deposition
US6919054B2 (en) * 2002-04-10 2005-07-19 Neophotonics Corporation Reactant nozzles within flowing reactors
US20090075083A1 (en) * 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US20060147369A1 (en) * 1997-07-21 2006-07-06 Neophotonics Corporation Nanoparticle production and corresponding structures
US7384680B2 (en) 1997-07-21 2008-06-10 Nanogram Corporation Nanoparticle-based power coatings and corresponding structures
US6952504B2 (en) * 2001-12-21 2005-10-04 Neophotonics Corporation Three dimensional engineering of planar optical structures
US6788866B2 (en) 2001-08-17 2004-09-07 Nanogram Corporation Layer materials and planar optical devices
US6368665B1 (en) 1998-04-29 2002-04-09 Microcoating Technologies, Inc. Apparatus and process for controlled atmosphere chemical vapor deposition
US6193911B1 (en) 1998-04-29 2001-02-27 Morton International Incorporated Precursor solution compositions for electronic devices using CCVD
US6208234B1 (en) 1998-04-29 2001-03-27 Morton International Resistors for electronic packaging
US6210592B1 (en) 1998-04-29 2001-04-03 Morton International, Inc. Deposition of resistor materials directly on insulating substrates
US6329899B1 (en) 1998-04-29 2001-12-11 Microcoating Technologies, Inc. Formation of thin film resistors
US6214473B1 (en) 1998-05-13 2001-04-10 Andrew Tye Hunt Corrosion-resistant multilayer coatings
EP0960955A1 (en) * 1998-05-26 1999-12-01 Universiteit Gent Method and apparatus for flame spraying to form a tough coating
US6207522B1 (en) * 1998-11-23 2001-03-27 Microcoating Technologies Formation of thin film capacitors
DE19858701C2 (de) * 1998-12-18 2001-06-21 Mtu Aero Engines Gmbh Verfahren zur Herstellung einer Wärmedämmschicht
US6579805B1 (en) 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
TW511105B (en) * 1999-03-11 2002-11-21 Murata Manufacturing Co Method of firing magnetic core
US20030078499A1 (en) * 1999-08-12 2003-04-24 Eppstein Jonathan A. Microporation of tissue for delivery of bioactive agents
US6372364B1 (en) 1999-08-18 2002-04-16 Microcoating Technologies, Inc. Nanostructure coatings
US6388230B1 (en) * 1999-10-13 2002-05-14 Morton International, Inc. Laser imaging of thin layer electronic circuitry material
US6212078B1 (en) 1999-10-27 2001-04-03 Microcoating Technologies Nanolaminated thin film circuitry materials
EP1268186B1 (en) * 1999-12-29 2015-09-02 nGimat Co. Chemical vapor deposition method and system.
ES2269428T3 (es) * 2000-06-30 2007-04-01 Ngimat Co. Revestimientos de polimeros.
WO2002004552A1 (en) * 2000-07-06 2002-01-17 Commonwealth Scientific And Industrial Research Organisation A process for modifying the surface of a substrate containing a polymeric material by means of vaporising the surface modifying agent
AUPQ859000A0 (en) * 2000-07-06 2000-07-27 Commonwealth Scientific And Industrial Research Organisation Apparatus for surface engineering
US6475316B1 (en) 2000-07-07 2002-11-05 3M Innovative Properties Company Methods of enhancing adhesion
AU2001280543A1 (en) * 2000-07-14 2002-02-05 Microcoating Technologies, Inc. Reduced grain boundary crystalline thin films
US20050191515A1 (en) * 2000-07-20 2005-09-01 Shipley Company, L.L.C. Very low thermal expansion composite
AU2001284724A1 (en) * 2000-08-03 2002-02-18 Microcoating Technologies, Inc. Electronic and optical materials
AU2002224399A1 (en) * 2000-10-17 2002-04-29 Neophotonics Corporation Coating formation by reactive deposition
DK1335829T3 (da) 2000-10-26 2011-12-05 Neophotonics Corp Optiske strukturer med flere lag
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
EP1251530A3 (en) * 2001-04-16 2004-12-29 Shipley Company LLC Dielectric laminate for a capacitor
US6917511B1 (en) 2001-08-14 2005-07-12 Neophotonics Corporation Reactive deposition for the formation of chip capacitors
US20060127599A1 (en) * 2002-02-12 2006-06-15 Wojak Gregory J Process and apparatus for preparing a diamond substance
EP1476397A4 (en) * 2002-02-19 2008-03-05 Tal Materials MIXED METAL OXIDE PARTICLES PRODUCED BY PYROLYSIS WITH FLAME PROJECTION OF A LIQUID LOAD OF OXIDE PRECURSORS IN OXYGEN SOLVENTS
US9918665B2 (en) 2002-03-11 2018-03-20 Nitto Denko Corporation Transdermal porator and patch system and method for using same
US8116860B2 (en) 2002-03-11 2012-02-14 Altea Therapeutics Corporation Transdermal porator and patch system and method for using same
AU2003225735A1 (en) * 2002-03-11 2003-09-29 Altea Therapeutics Corporation Transdermal drug delivery patch system, method of making same and method of using same
JP2006508502A (ja) 2002-11-08 2006-03-09 アドバンスド ライティング テクノロジイズ,インコーポレイティド 放電ランプにおけるバリアコーティングおよび方法
US20040185346A1 (en) * 2003-03-19 2004-09-23 Takeuchi Esther S. Electrode having metal vanadium oxide nanoparticles for alkali metal-containing electrochemical cells
US7375035B2 (en) 2003-04-29 2008-05-20 Ronal Systems Corporation Host and ancillary tool interface methodology for distributed processing
JP4541900B2 (ja) * 2003-05-20 2010-09-08 アイトゲネシッシェ テヒニッシェ ホーホシューレ チューリッヒ ナノ粒子製造用金属供給システム
US7521097B2 (en) * 2003-06-06 2009-04-21 Nanogram Corporation Reactive deposition for electrochemical cell production
US8865271B2 (en) * 2003-06-06 2014-10-21 Neophotonics Corporation High rate deposition for the formation of high quality optical coatings
US7429714B2 (en) * 2003-06-20 2008-09-30 Ronal Systems Corporation Modular ICP torch assembly
US7390535B2 (en) 2003-07-03 2008-06-24 Aeromet Technologies, Inc. Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
US8016811B2 (en) * 2003-10-24 2011-09-13 Altea Therapeutics Corporation Method for transdermal delivery of permeant substances
US7387816B2 (en) 2003-12-15 2008-06-17 Guardian Industries Corp. Scratch resistant coated glass article including layer(s) resistant to fluoride-based etchant(s), and method of making article using combustion CVD
EP1761459B1 (en) * 2004-03-15 2017-02-01 Eidgenössische Technische Hochschule Zürich Flame synthesis of metal salt nanoparticles, in particular calcium and phosphate comprising nanoparticles
EP1614720A1 (en) * 2004-06-28 2006-01-11 Ensci Incorporated Process for producing thin film metal non-oxide coated powder substrates and products produced therefrom
US7909263B2 (en) * 2004-07-08 2011-03-22 Cube Technology, Inc. Method of dispersing fine particles in a spray
US7455883B2 (en) * 2004-10-19 2008-11-25 Guardian Industries Corp. Hydrophilic DLC on substrate with flame pyrolysis treatment
US20060110605A1 (en) * 2004-11-24 2006-05-25 Guardian Industries Corp. Hydrophilic coating and method of making same
US20060107599A1 (en) * 2004-11-24 2006-05-25 Guardian Industries Corp. Flush-mounted slider window for pick-up truck with hydrophilic coating on interior surface thereof, and method of making same
US8088440B2 (en) * 2004-11-24 2012-01-03 Guardian Industries Corp. Hydrophobic coating including underlayer(s) deposited via flame pyrolysis
US7597938B2 (en) * 2004-11-29 2009-10-06 Guardian Industries Corp. Method of making coated article with color suppression coating including flame pyrolysis deposited layer(s)
US20060124046A1 (en) * 2004-12-09 2006-06-15 Honeywell International, Inc. Using thin film, thermal batteries to provide security protection for electronic systems
WO2006061784A2 (en) * 2004-12-10 2006-06-15 Koninklijke Philips Electronics N.V. Substrate temperature control for combustion chemical vapor deposition
US20100151130A1 (en) * 2004-12-10 2010-06-17 Koninklijke Philips Electronics, N.V. Combustion chemical vapor deposition on temperature-sensitive substrates
US7491431B2 (en) * 2004-12-20 2009-02-17 Nanogram Corporation Dense coating formation by reactive deposition
WO2006084390A1 (en) * 2005-02-11 2006-08-17 Eth Zurich Antimicrobial and antifungal powders made by flame spray pyrolysis
US20060246218A1 (en) * 2005-04-29 2006-11-02 Guardian Industries Corp. Hydrophilic DLC on substrate with barrier discharge pyrolysis treatment
US7402826B2 (en) * 2005-05-13 2008-07-22 Honeywell International Inc. System and method for non-destructively determining thickness and uniformity of anti-tamper coatings
US20060275542A1 (en) * 2005-06-02 2006-12-07 Eastman Kodak Company Deposition of uniform layer of desired material
ITMI20051308A1 (it) * 2005-07-11 2007-01-12 Milano Politecnico Metodo e reattore per crescere cristalli
US7189335B1 (en) * 2005-08-31 2007-03-13 Honeywell International Inc. Conformal coverings for electronic devices
CA2626603C (en) * 2005-10-17 2014-07-15 National Research Council Of Canada Reactive spray formation of coatings and powders
US20070113881A1 (en) * 2005-11-22 2007-05-24 Guardian Industries Corp. Method of making solar cell with antireflective coating using combustion chemical vapor deposition (CCVD) and corresponding product
KR100742857B1 (ko) 2005-12-26 2007-07-25 주식회사 포스코 젖음성이 우수한 실리콘 산화피막의 연소화학 기상증착방법
US7427577B2 (en) * 2006-04-06 2008-09-23 Nanocerox Inc Sintered polycrystalline terbium aluminum garnet and use thereof in magneto-optical devices
DE102006029617A1 (de) * 2006-06-23 2007-12-27 Verein zur Förderung von Innovationen durch Forschung, Entwicklung und Technologietransfer e.V. (Verein INNOVENT e.V.) Verfahren zur Modifizierung der Oberflächeneigenschaften von Glas
DE102006045617B4 (de) * 2006-09-22 2010-06-10 Innovent E.V. Technologieentwicklung Verfahren zur Herstellung einer anorganisch-anorganischen Gradientenverbundschicht
US20100120576A1 (en) * 2007-03-29 2010-05-13 Masanori Satou Planetary gear device
JP2010530032A (ja) * 2007-06-15 2010-09-02 ナノグラム・コーポレイション 反応流による無機箔体の析出および合成法
JP2010532819A (ja) * 2007-07-06 2010-10-14 ピルキントン グループ リミテッド 蒸着法
US8105649B1 (en) 2007-08-09 2012-01-31 Imaging Systems Technology Fabrication of silicon carbide shell
US20100307593A1 (en) * 2007-08-31 2010-12-09 Washington University Synthesis of nanostructured photoactive films with controlled morphology by a flame aerosol reactor
US7655274B2 (en) 2007-11-05 2010-02-02 Guardian Industries Corp. Combustion deposition using aqueous precursor solutions to deposit titanium dioxide coatings
US7923063B2 (en) 2007-12-10 2011-04-12 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Method of making glass including surface treatment with aluminum chloride using combustion deposition prior to deposition of antireflective coating
US8563097B2 (en) 2007-12-17 2013-10-22 Guardian Industries Corp. Remote combustion deposition burner and/or related methods
US8440256B2 (en) * 2007-12-17 2013-05-14 Guardian Industries Corp. Combustion deposition of metal oxide coatings deposited via infrared burners
US8414970B2 (en) * 2008-02-15 2013-04-09 Guardian Industries Corp. Organosiloxane inclusive precursors having ring and/or cage-like structures for use in combustion deposition
US20090233105A1 (en) * 2008-03-13 2009-09-17 Remington Jr Michael P Composite coatings comprising hollow and/or shell like metal oxide particles deposited via combustion deposition
US20090233088A1 (en) 2008-03-13 2009-09-17 Lewis Mark A In situ nano-particle matrix loading of metal oxide coatings via combustion deposition
US8795773B2 (en) 2008-03-13 2014-08-05 Guardian Industries Corp. Nano-particle loaded metal oxide matrix coatings deposited via combustion deposition
US8197908B2 (en) * 2008-03-14 2012-06-12 Hestia Tec, Llc Method for preparing electrically conducting materials
US20090274930A1 (en) * 2008-04-30 2009-11-05 Guardian Industries Corp. Alkaline earth fluoride coatings deposited via combustion deposition
US8231730B2 (en) * 2008-06-09 2012-07-31 Guardian Industries Corp. Combustion deposition burner and/or related methods
US20090311423A1 (en) * 2008-06-12 2009-12-17 Guardian Industries Corp. Surface-assisted combustion deposition deposited coatings, and/or methods of making the same
US8003164B2 (en) * 2008-09-19 2011-08-23 Guardian Industries Corp. Method of making a scratch-and etch-resistant coated glass article
EP2192091A1 (en) * 2008-12-01 2010-06-02 ETH Zurich Process for providing super-hydrophilic properties to a substrate
JP5744750B2 (ja) * 2008-12-08 2015-07-08 ヘスティア テック, エル・エル・シーHestia Tec, Llc 多成分材料を形成するためのプロセス及びそのための装置
US20100203287A1 (en) * 2009-02-10 2010-08-12 Ngimat Co. Hypertransparent Nanostructured Superhydrophobic and Surface Modification Coatings
US20110086178A1 (en) * 2009-10-14 2011-04-14 General Electric Company Ceramic coatings and methods of making the same
US20110159199A1 (en) * 2009-12-28 2011-06-30 Guardian Industries Corp. Large area combustion deposition line, and associated methods
US9637820B2 (en) * 2009-12-28 2017-05-02 Guardian Industries Corp. Flame guard and exhaust system for large area combustion deposition line, and associated methods
JP5427680B2 (ja) * 2010-04-14 2014-02-26 株式会社金陽社 有機薄膜太陽電池の製造方法
JP5612425B2 (ja) * 2010-10-01 2014-10-22 大阪瓦斯株式会社 粉粒体加熱装置
JP2012107318A (ja) * 2010-10-25 2012-06-07 Koba Technology:Kk 基材の表面改質方法及びその装置
GB201108244D0 (en) 2011-05-17 2011-06-29 Pilkington Group Ltd Burner for flame coating
US9264150B2 (en) 2012-03-28 2016-02-16 Globalfoundries Inc. Reactive metal optical security device and methods of fabrication and use
CN104395493B (zh) 2012-06-23 2017-08-25 福瑞托-雷北美有限公司 超薄无机氧化物涂层在包装上的沉积
WO2013192560A2 (en) 2012-06-23 2013-12-27 Frito-Lay North America, Inc. Deposition of ultra-thin inorganic oxide coatings on packaging
FR3011545B1 (fr) 2013-10-09 2018-01-12 Saint-Gobain Glass France Procede de formation d'une couche de verre colore sur un substrat verrier par pyrolyse a la flamme
US10533264B1 (en) 2015-12-02 2020-01-14 General Graphene Corp. Apparatus for producing graphene and other 2D materials
US10683209B2 (en) * 2016-03-18 2020-06-16 Lg Chem, Ltd. Ultra-high temperature precipitation process for manufacturing polysilicon
EP3953060A4 (en) * 2019-04-10 2022-12-28 New Mexico Tech University Research Park Corporation Solid particle aerosol generator
CN116396064B (zh) * 2023-03-29 2024-02-02 昆明理工大学 一种喷雾热解沉积制备氧化铝基复合材料复杂形状磨粒的方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3642521A (en) * 1969-10-27 1972-02-15 Texas Instruments Inc Production of metal oxides
US3849057A (en) * 1970-12-14 1974-11-19 Peck Co C Jet flame cleaning and coating apparatus and method
US3883336A (en) * 1974-01-11 1975-05-13 Corning Glass Works Method of producing glass in a flame
US4173305A (en) * 1978-03-10 1979-11-06 Corning Glass Works System for delivering materials to deposition site on optical waveguide blank
US4591825A (en) * 1983-08-22 1986-05-27 Trw Inc. Analog-to-digital-converter and related encoding technique
JPS60108338A (ja) * 1983-11-15 1985-06-13 Nippon Telegr & Teleph Corp <Ntt> 光フアイバ母材の製造方法
JPS62288842A (ja) * 1986-06-09 1987-12-15 Tosoh Corp フオトマスク,レチクルの保護防塵体
US5275798A (en) * 1986-07-11 1994-01-04 Kyocera Corporation Method for producing diamond films
EP0252755A1 (en) * 1986-07-11 1988-01-13 Unvala Limited Chemical vapour deposition
CA1332324C (en) * 1987-03-30 1994-10-11 Jun Shioya Method for producing thin film of oxide superconductor
JPH0280303A (ja) * 1987-06-04 1990-03-20 Tonen Corp 超伝導体薄膜の形成方法及びその為の装置
US4822466A (en) * 1987-06-25 1989-04-18 University Of Houston - University Park Chemically bonded diamond films and method for producing same
JPH01212220A (ja) * 1987-10-09 1989-08-25 Fujitsu Ltd 超伝導材料の気相成長方法
JPH01115857A (ja) * 1987-10-13 1989-05-09 Dow Corning Corp 超電導物質の製造方法
US5034372A (en) * 1987-12-07 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Plasma based method for production of superconductive oxide layers
JPH01246116A (ja) * 1988-03-29 1989-10-02 Natl Inst For Res In Inorg Mater 針状,繊維状,多孔質状ダイヤモンドまたはそれらの集合体の製造法
JPH07106898B2 (ja) * 1988-06-01 1995-11-15 株式会社フジクラ 酸化物系超電導体の製造方法
US5178905A (en) * 1988-11-24 1993-01-12 Canon Kabushiki Kaisha Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state
US5021399A (en) * 1989-03-10 1991-06-04 Microelectronics & Computer Technology Corp. Spray pyrolysis process for preparing superconductive films
US4994420A (en) * 1989-10-12 1991-02-19 Dow Corning Corporation Method for forming ceramic materials, including superconductors
US5108983A (en) * 1989-11-21 1992-04-28 Georgia Tech Research Corporation Method for the rapid deposition with low vapor pressure reactants by chemical vapor deposition
US5215788A (en) * 1990-07-06 1993-06-01 Kabushiki Kaisha Toyota Chuo Kenkyusho Combustion flame method for forming diamond films
US5174983A (en) * 1990-09-24 1992-12-29 The United States Of America, As Represented By The Secretary Of The Navy Flame or plasma synthesis of diamond under turbulent and transition flow conditions
US5154744A (en) * 1991-08-26 1992-10-13 Corning Incorporated Method of making titania-doped fused silica
US5715788A (en) * 1996-07-29 1998-02-10 Cummins Engine Company, Inc. Integrated fuel injector and ignitor assembly

Also Published As

Publication number Publication date
US6013318A (en) 2000-01-11
JP3519406B2 (ja) 2004-04-12
EP0689618A4 (en) 1998-01-21
WO1994021841A1 (en) 1994-09-29
CA2158568C (en) 2001-12-04
DE69432175D1 (de) 2003-04-03
EP0689618B1 (en) 2003-02-26
JPH08511062A (ja) 1996-11-19
CA2158568A1 (en) 1994-09-29
US5652021A (en) 1997-07-29
AU6415294A (en) 1994-10-11
US5863604A (en) 1999-01-26
DE69432175T2 (de) 2004-03-04
KR100323216B1 (ko) 2002-07-03
ES2193156T3 (es) 2003-11-01
ATE233327T1 (de) 2003-03-15
EP0689618A1 (en) 1996-01-03

Similar Documents

Publication Publication Date Title
KR960701236A (ko) 필름 및 코우팅의 연소 화학적 증기 증착을 위한 방법 및 장치(method and apparatus for the combustion chemical vapor deposition of films and coatings)
US6368665B1 (en) Apparatus and process for controlled atmosphere chemical vapor deposition
BR9610069A (pt) Disposição de vapor quìmico e formação de pó usando-se pulverização térmica com soluções de fluido quase super-crìticas e super-crìticas
ES2082007T3 (es) Metodo para preparar reactivos vaporizados para el deposito quimico por vapor.
JPS60186072A (ja) 太陽電池パネル
WO2011131825A1 (en) Coating method and apparatus
Goto High-speed deposition of zirconia films by laser-induced plasma CVD
Carter et al. Combustion chemical vapor deposition of CeO2 film
AU1934488A (en) Apparatus for coating a substrate
AU5783600A (en) Method of coating ceramics using ccvd
ES2373129T3 (es) Deposición por combustión utilizando soluciones precursoras acuosas para depositar recubrimientos de dióxido de titanio.
KR100684275B1 (ko) 정전분무 화염증착법을 이용한 박막 제조장치
HK1024938A (en) Apparatus and process for controlled atmosphere chemical vapor deposition
Carter Flame assisted deposition of oxide coatings
Gutierrez Combustion CVD: exploration of potential for optical thin film synthesis
WO2012146828A2 (en) Process and apparatus for coating
TH34995A (th) ซับสเตรทเคลือบด้วยเซรามิกอุณหภูมิสูง
MXPA99003646A (en) Apparatus and process for the deposit of chemical vapor, with control atmosphere

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 19950923

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19990324

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20001201

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20011126

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20020122

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20020123

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20050120

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20060103

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20070104

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20080103

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20090105

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20100119

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20110118

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20120117

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20120117

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20130111

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20130111

Start annual number: 12

End annual number: 12

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20140924

Termination category: Expiration of duration