KR20180013698A - Manufacturing method of display device - Google Patents

Abstract

A first insulating film is formed on a surface of a substrate having a display region on which a plurality of display elements are arranged and a display region is formed and organic molecules are adsorbed on substantially the entire first surface of the first insulating film opposite to the substrate Organic molecules adsorbed in a first region including a display region and defined as an inside region that does not reach the end portion of the first insulating film are removed from the first surface of the first insulating film, Removing organic molecules adsorbed outside the first region of the first insulating film and forming a second insulating film on the first insulating film and the second insulating film so as to be in contact with the first insulating film on the outside of the second insulating film And forming a third insulating film on the first insulating film.

Description

TECHNICAL FIELD [0001] The present invention relates to a manufacturing method of a display device,

The present invention relates to a method of manufacturing a display device.

In the display device, a light emitting element is provided in each pixel, and an image is displayed by individually controlling light emission. For example, in an organic EL display device using an organic EL element as a light emitting element, an organic EL element is provided for each pixel, and an organic EL element is disposed between a pair of electrodes composed of an anode electrode and a cathode electrode. (Hereinafter referred to as " organic EL layer "). In the organic EL display device, the anode electrode is provided as a separate pixel electrode for each pixel, and the cathode electrode is provided as a common pixel electrode to which a common potential is applied across a plurality of pixels. The organic EL display device controls the light emission of the pixel by applying the voltage of the pixel electrode to the potential of the common pixel electrode for each pixel.

The organic EL layer is very weak in moisture, so that when moisture enters from the outside into the panel and reaches the organic EL layer, an unlit spot region called a dark spot may occur. Therefore, in order to prevent the penetration of moisture into the organic EL layer, measures are taken to form a sealing film so as to cover the structure of the display region in which the organic EL elements are arranged.

As the sealing film, an organic insulating film and a structure in which the side surface and the upper and lower surfaces of the organic insulating film are laminated with an inorganic insulating film are generally used. In order to prevent moisture from penetrating in the lateral direction, the end of the region where the organic insulating film is disposed must be sealed by the inorganic insulating film on the top and bottom. Japanese Patent Laid-Open Publication No. 2008-165251 discloses a method in which an organic insulating film is formed in a clogged manner inside a clogged portion by surrounding a region where an organic insulating film is disposed with a clogged portion. However, with the recent narrowing of the frame width, it is necessary to narrow the outer peripheral portion of the display region as much as possible, and it becomes increasingly difficult to control the position of the end portion of the organic insulating film.

According to one embodiment of the present invention, a first insulating film is formed on a surface of a substrate having a display region on which a plurality of display elements are arranged, the surface including the display region, and the first insulating film on the first surface Organic molecules adsorbed on a first region of the first insulating film including a display region and adsorbed in a first region defined as an inside region which does not reach the end portion of the first insulating film are removed A second insulating film is formed in a first region where organic molecules are removed from the first insulating film, organic molecules adsorbed outside the first region of the first insulating film are removed, and a second insulating film is formed on the first insulating film and the second insulating film, And forming a third insulating film in contact with the first insulating film outside the insulating film.

According to one embodiment of the present invention, a first insulating film is formed on a surface of a substrate having a display region on which a plurality of display elements are arranged, the display surface including a display region, and a first insulating film is formed on a first surface Organic molecules are adsorbed to a first insulating film including a display region and masking a first region defined as an inside region that does not reach the end portion of the first insulating film, and organic molecules are adsorbed in the first insulating film A third insulating film is formed on the first insulating film and the second insulating film so as to be in contact with the first insulating film on the outside of the second insulating film, Forming a display device on a substrate;

According to one embodiment of the present invention, a first insulating film is formed on a surface of a substrate having a display region on which a plurality of display elements are arranged, the display surface including a display region, and a first insulating film is formed on a first surface And a first insulating film including a display region and masking the first region other than the first region defined as an inner region which does not reach the end portion of the first insulating film, Forming a second insulating film, and forming a third insulating film on the first insulating film and the second insulating film, the third insulating film being in contact with the first insulating film outside the second insulating film.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a schematic configuration of a display device manufactured using a manufacturing method according to an embodiment of the present invention; Fig.
2 is a plan view showing a schematic structure of a display device manufactured using a manufacturing method according to an embodiment of the present invention;
3 is a cross-sectional view showing a schematic structure of a display device manufactured using a manufacturing method according to an embodiment of the present invention.
4A is a sectional view showing a manufacturing method of a display device according to an embodiment of the present invention.
4B is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention.
4C is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention.
4D is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention.
4E is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention;
FIG. 4F is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention; FIG.
5A is a sectional view showing a method of manufacturing a display device according to an embodiment of the present invention.
5B is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention.
5C is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention.
FIG. 5D is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention; FIG.
FIG. 5E is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention; FIG.
6 is a cross-sectional view showing a schematic structure of a display device manufactured using a manufacturing method according to an embodiment of the present invention;
7A is a sectional view showing a method of manufacturing a display device according to an embodiment of the present invention.
7B is a cross-sectional view showing a method of manufacturing a display device according to an embodiment of the present invention.
7C is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention.
7D is a cross-sectional view showing a method of manufacturing a display device according to an embodiment of the present invention.
7E is a cross-sectional view showing a manufacturing method of a display device according to an embodiment of the present invention.

Hereinafter, a display device according to some embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention can be embodied in many different forms and is not limited to the description of the embodiments described below. In the embodiments of the present invention, particularly, an organic EL display device is exemplified as a suitable application example, but the present invention is not limited thereto.

In order to make the description more clear, the widths, thicknesses, shapes, and the like of the respective parts are schematically expressed in comparison with the actual shapes, but they are merely examples and do not limit the interpretation of the present invention. Note that the dimensional ratios in the drawings may be different from the actual ratios in the convenience of explanation, or some of the structures may be omitted from the drawings. In the present specification and the drawings, the same reference numerals are given to the same elements as those described above in connection with the drawing, and the detailed description thereof is omitted as appropriate.

In this specification, when a member or an area is referred to as being "above (or below)" another member or an area, unless it is specifically limited, it is directly above (or below) another member or area In addition, the present invention includes a case where the member is located above (or below) another member or region, that is, the case where another member is included between the upper portion (or the lower portion) of another member or region.

≪ First Embodiment >

1 is a perspective view of a display device 100 according to the present embodiment. The configuration of the display apparatus 100 according to the present embodiment will be described with reference to Fig. In the display device 100, the display region 106 is formed on the first substrate 102. [ The display region 106 is formed by arranging a plurality of pixels 108. On the upper surface of the display region 106, a second substrate 104 as a sealing material is provided. The second substrate 104 is fixed to the first substrate 102 by a sealing material 110 surrounding the display area 106, for example. The display area 106 formed on the first substrate 102 is sealed by the second substrate 104 which is a sealing material and the sealing material 110 so as not to be exposed to the atmosphere. This sealing structure suppresses the deterioration of the light emitting element provided in the pixel. The sealing material 110 surrounding the display area 106 may be fixed by other means without using the second substrate 104 when the second substrate 104 is installed.

Referring to Figs. 2 and 3, the schematic configuration of the display device 100 according to the present embodiment will be described. Fig. 2 is a plan view showing a schematic structure of a display device 100 manufactured by using the manufacturing method according to the present embodiment. 3 is a cross-sectional view showing a schematic structure of a display device 100 manufactured using the manufacturing method according to the present embodiment. 3 shows a cross-sectional view taken along line A-B in Fig.

In the display device 100 according to the present embodiment, a display region 106 for forming a display screen is formed on the first substrate 102. [ The first substrate 102 has a terminal region 114 at one end thereof. The terminal region 114 is disposed outside the second substrate 104. The terminal region 114 is constituted by a plurality of connection terminals 116. The connection terminal 116 forms a contact between a device for outputting a video signal and a wiring board connecting the power source and the display panel. This contact of the connection terminal 116 is exposed to the outside. The first substrate 102 is provided with a first driving circuit 111 and a second driving circuit 112 for outputting a video signal input from the terminal region 114 to the display region 106. [

The display area 106 and the first driving circuit 111 and the second driving circuit 112 are connected by wiring. In the display region 106, a wiring called a scanning signal line and a video signal line is provided in addition to the pixel 108. [ Each pixel 108 of the display area 106 is connected to the first driving circuit 111 and the second driving circuit 112 by these wirings. For example, the first driving circuit 111 is a driving circuit for outputting a scanning signal to the display area 106, and the second driving circuit 112 is a driving circuit for outputting a video signal to the display area 106. [ 3 shows a form in which a sealing region 113 is provided between the display region 106 and the first driving circuit 111. [

As shown in Fig. 3, each of the plurality of pixels of the display device 100 has a transistor 118 and a light emitting element 120. Fig. The light emitting element 120 has a structure in which the light emitting layer 126 is sandwiched between the individual pixel electrode 122 and the common pixel electrode 124 disposed opposite thereto. The individual pixel electrodes 122 are independent for each pixel, and are connected to the transistors 118, respectively. The common pixel electrode 124 is applied with a common potential across a plurality of pixels. However, the present invention is not limited to this, and the application of the potential to the common pixel electrode 124 may be performed separately for all or some of the pixels independently of the others.

Banks 128 are formed between two adjacent pixels. The bank 128 is formed such that its end covers the periphery of the individual pixel electrode 122. [ It is preferable that the banks 128 are formed of an insulating material since the banks 128 prevent shorting from the common pixel electrodes 124 at the ends of the individual pixel electrodes 122 and also isolate adjacent pixels from each other. For example, in order to form the bank 128, it is preferable to use an organic material such as polyimide or acrylic, or an inorganic material such as silicon oxide.

The display device 100 shown in this embodiment has a so-called top emission type structure in which light emitted from the light emitting element 120 is emitted to the common pixel electrode 124 side. In this embodiment, the top emission type is exemplified. However, the present invention is not limited to this, but the present invention may be applied to a so-called bottom emission type in which the light is emitted to the individual pixel electrode 122 side. The individual pixel electrodes 122 are preferably formed of a metal film having a high reflectance so as to reflect the light emitted from the light emitting layer 126 to the common pixel electrode 124 side. Alternatively, the individual pixel electrodes 122 may have a laminated structure of a metal film and a transparent conductive film, and a light reflecting surface may be included. On the other hand, the common pixel electrode 124 is formed of a transparent conductive material such as ITO (indium tin oxide-added indium oxide) or IZO (indium oxide-zinc oxide) having light transmittance and conductivity, It is preferable that it is formed of a film. Alternatively, as the common pixel electrode 124, a metal layer may be formed to a thickness enough to transmit the outgoing light.

A sealing film is formed on the common pixel electrode 124. For example, in an organic EL display device using an organic EL element as the light emitting element 120, since the organic EL layer is very weak to moisture, when moisture enters from the outside into the panel and reaches the organic EL layer, A light emitting defect point called a spot may occur. As a result, a sealing film is formed so as to cover the display region 106. In the sealing film, it is preferable to use an insulating film capable of blocking the intrusion of moisture, and a multilayer film of an inorganic insulating material and an organic insulating material can be used. For example, when an inorganic insulating material is used, a silicon oxide (SiO _x ), silicon nitride (Si _x N _y ), silicon oxynitride (SiO _x N _y ), silicon nitride oxide (SiN _x O _y ) (Al _x O _y ), aluminum nitride (Al _x N _y ), aluminum oxynitride (Al _x O _y N _z ), aluminum nitride oxide (Al _x N _y O _z ) y and z are arbitrary). As the film forming method, a plasma CVD method or a sputtering method can be used. As the organic insulating material covering the above-described inorganic insulating film, a polyimide resin, an acrylic resin, an epoxy resin, a silicone resin, a fluororesin, a siloxane resin, or the like can be used. As the film forming method, for example, an ink-jet method can be used.

A structure in which an inorganic insulating layer is further laminated on the organic insulating layer may be used. By using the laminated structure of the organic insulating layer and the inorganic insulating layer, it is possible to expect further prevention of invasion of moisture. In the case of a laminated structure, the end of the organic insulating layer is preferably covered with an inorganic insulating layer.

In the present embodiment, the sealing film has a three-layer structure, and the first insulating film 130, the second insulating film 132, and the third insulating film 134 are formed from the lower side. All three layers of the first insulating film 130, the second insulating film 132, and the third insulating film 134 are disposed so as to cover the display region 106. The end portions of the first insulating film 130, the second insulating film 132, and the third insulating film 134 are located outside the end portions of the display region 106. [

As the first insulating film 130, an inorganic insulating material or an insulating material of an organic insulating material can be used. As the first insulating film 130, a film having a high water barrier property is preferable, and it is particularly preferable to use an inorganic insulating layer. For example, a silicon nitride film can be used. At this time, a single layer of only the first insulating film 130 can not be sufficiently covered because of irregularities caused by the light emitting element 120 or the like in the display region 106, and thus a partial path of moisture may occur.

Thus, a second insulating film 132 for securing high flatness is formed as a second layer. As the second insulating film 132, an organic insulating layer such as acrylic can be used. As shown in FIG. 3, the region of the second insulating film 132 includes the display region 106, but does not include the first driving circuit 111. The end portion of the second insulating film 132 is located in the sealing region 113 between the display region 106 and the first driving circuit 111. [

The third insulating film 134 is formed on the second insulating film 132 having improved flatness. Because of planarization by the second insulating film 132, the third insulating film 134 has a high covering property, and generation of the propagation path of moisture can be suppressed. As the third insulating film 134, an inorganic insulating material or an insulating material of an organic insulating material can be used. The third insulating film 134 is preferably a film having a high water barrier property. For example, an inorganic insulating material such as a silicon nitride film is preferably used.

In the present embodiment, the first insulating film 130 and the third insulating film 134 cover the second insulating film 132 at the end portions of the three-layered insulating film. 2 and 3, the first insulating film 130 and the third insulating film 134 are larger than the second insulating film 132, and the first insulating film 130 And the third insulating film 134 are in contact with each other. By employing such a structure, particularly, the end portion of the second insulating film 132 is prevented from being exposed. When the organic insulating layer is used as the second insulating film 132, if the end portion is exposed, it can be an intrusion path of moisture invaded from the outside. The moisture penetrating from the end portion of the second insulating film 132 may propagate to the light emitting device 120, thereby reducing the life of the display device 100.

The first insulating film 130 and the third insulating film 134 are formed so as to cover the second insulating film 132 at the ends of the insulating films stacked in three layers as in this embodiment, Moisture intrusion can be suppressed, and a highly reliable display device can be provided. The end portion of the second insulating film 132 is located in the sealing region 113, and this region is also referred to as a " moisture blocking region ". Further, by using the sealing material in combination with the sealing structure of the conventional sealing material 110, the resistance to moisture can be further improved, and a highly reliable display device can be provided. Further, the sealing region 113 can be narrowly designed by the structure of the three-layered insulating film according to the present embodiment, and the outer periphery of the display region can be made narrower.

<Manufacturing Method>

4A to 4F, a manufacturing method of the display device 100 according to the present embodiment will be described. In the present embodiment, since the conventional method can be used other than the formation of the sealing film, the description thereof will be omitted and, in the drawing, A method of depositing a layer over the electrode 124 will be described.

First, a first insulating film 130 is formed. As shown in FIG. 4A, a first insulating film 130 is formed on the surface of the first substrate 102 on which circuits are formed. In the present embodiment, a silicon nitride film is formed by plasma CVD. As shown in Figs. 2 and 3, the first insulating film 130 is formed on substantially the entire surface of the first substrate 102 on which circuits are formed, but the present invention is not limited to this. The first insulating film 130 is formed to include at least a portion of the display region 106 and the sealing region 113.

Subsequently, the organic molecules 138 are adsorbed on substantially the entire surface of the first insulating film 130. As shown in FIG. 4B, the surface of the first insulating film 130 is exposed to organic vapor to adsorb the organic molecules 138. As the material of the organic molecules, organic molecules such as phthalic acid esters, low-molecular siloxanes, phosphoric acid esters or dibutylhydroxytoluene can be used. However, the organic molecules 138 are not limited to this, and the organic molecules 138 are preferably made of a material having a high adsorption property with respect to the first insulating film 130 and being easily removable and having a high liquid repellency with respect to the material of the second insulating film 132 . By adsorbing the organic molecules 138 on the surface of the first insulating film 130, the wettability of the material of the second insulating film 132 in the first insulating film 130 is deteriorated and the liquid repellency is increased.

Subsequently, a part of the organic molecules 138 on the first insulating film 130 are removed. The mask 136 is disposed on the first insulating film 130 and the organic molecules 138 are removed through the opening of the mask 136 as shown in FIG. The opening end of the mask 136 is disposed so as to be located in the sealing region 113. That is, the opening of the mask 136 exposes at least the display region 106. In the pretreatment, organic molecules on the first insulating film 130 are removed at the opening of the mask 136, for example, by performing glow discharge plasma treatment of the gas containing oxygen. Plasma treatment, UV / O ₃ , laser and the like can be used as a pretreatment method. As the gas used for the plasma treatment, oxygen, argon, nitrogen, carbon tetrachloride, nitrous oxide and the like can be used. The plasma treatment may be performed at normal pressure or reduced pressure. By performing the pretreatment for removing the organic molecules 138 on the first insulating film 130, the wettability of the material of the second insulating film 132 in the first insulating film 130 is improved and the lyophilic property is enhanced.

Subsequently, a second insulating film 132 is formed on the first insulating film 130. In the present embodiment, an acrylic resin is formed by an ink-jet method. In Fig. 4C, the region where the organic molecules, which are the openings of the mask 136, are removed has improved wettability and lyophilicity. On the other hand, in the region where the organic molecules protected by the mask 136 remain, the wettability deteriorates and the liquid repellency becomes high. As a result, as shown in FIG. 4D, the second insulating film 132 is repelled in a region where organic molecules remain, and is selectively formed in a region where organic molecules are removed. By using the characteristics of the organic molecules as described above, the film formation position of the second insulating film 132 can be controlled. As shown in Fig. 2, the region for forming the second insulating film 132 is smaller than the region for forming the first insulating film 130, and includes the display region 106 as well. As shown in Fig. 3, the end of the region where the second insulating film 132 is formed is located within the sealing region 113 and within the region where the first insulating film 130 is formed.

Subsequently, the remaining organic molecules 138 on the first insulating layer 130 are removed. The organic molecules 138 of the first insulating film 130 are removed as shown in FIG. 4E. For example, by performing glow discharge plasma treatment of a gas containing oxygen on the film formation surface, remaining organic molecules on the first insulating film 130 are removed. However, the present invention is not limited to this, and a variety of methods can be used for the process of removing the organic molecules 138 of the first insulating film 130. The process of removing the organic molecules 138 on the first insulating film 130 increases the adhesion of the material of the third insulating film 134 to the first insulating film 130, It is possible to prevent moisture from being generated by the presence of organic substances at the interface of the organic EL element. In addition, the entire surface of the film formation surface is not treated, only the first insulating film 130 on which the organic molecules are left may be treated, or only a part of the first insulating film 130 may be treated. When only a part of the first insulating film 130 is to be processed, at least a region surrounding the end portion of the second insulating film 132 is processed.

Then, a third insulating film 134 is formed on the first insulating film 130 and the second insulating film 132. In the present embodiment, a silicon nitride film is formed by plasma CVD. In Fig. 4E, the adhesion of the third insulating film 134 to the region where the organic molecules are removed becomes high. As a result, as shown in FIG. 4F, the third insulating film 134 is formed on the first insulating film 130 and the second insulating film 132. And the third insulating film 134 covers the end portion of the second insulating film 132. By using the characteristics of the organic molecules as described above, the second insulating film 132 can be selectively formed at an intended position. As shown in FIGS. 2 and 3, the third insulating film 134 is formed on substantially the entire surface of the first substrate 102 on which the circuit is formed, like the first insulating film 130, but is not limited thereto Do not. The region where the third insulating film 134 is formed is larger than the region where the second insulating film 132 is formed and the end portion of the region where the third insulating film 134 is formed is larger than the region where the second insulating film 132 is formed It may be located outside the end portion.

According to the film forming method of the present invention, for positioning the end portion of the second insulating film 132, organic molecules are first adsorbed to the first insulating film 130 as shown in FIGS. 4B and 4C, The organic molecules in the film forming region are removed. In other words, organic molecules are selectively adsorbed to the non-film region of the first insulating film 130. By adsorbing organic molecules on the first insulating film 130, the wettability of the region with respect to the second insulating film material deteriorates, and the liquid repellency becomes high. The wettability of the second insulating film material is improved and the lyophilic property is enhanced. As a result, as shown in FIG. 4D, the second insulating film 132 is repelled in the region where the organic molecules remain, and is selectively formed in the region where the organic molecules are removed. By using the characteristics of the organic molecules as described above, the film forming range of the second insulating film 132 can be controlled.

The end portion of the second insulating film 132 can be prevented from being exposed from the sealing film by the manufacturing method of the display device using the film forming method according to the present embodiment. As a result, it is possible to suppress moisture infiltration from the end portion of the insulating film, thereby providing a highly reliable display device. Further, since the position of the sealing film laminated in three layers can be controlled, the sealing region 113 can be designed to be narrow, and the outer peripheral portion of the display region can be made narrower.

&Lt; Second Embodiment >

In the present embodiment and the first embodiment, since the structure of the display device 100 and a part of the manufacturing process are common, a repetitive description will be omitted.

<Manufacturing Method>

In the film forming method according to the first embodiment, organic molecules are adsorbed on substantially the entire surface of the first insulating film 130, and then organic molecules (not shown) in the film forming region of the second insulating film 132 on the first insulating film 130 And the second insulating film 132 was formed. In the film forming method according to the second embodiment, organic molecules are adsorbed on the non-film region of the second insulating film 132 on the first insulating film 130, and the second insulating film 132 is formed. The detailed description of the same parts as those of the first embodiment will be omitted.

A method of manufacturing the display device 100 in this embodiment will be described with reference to Figs. 5A to 5E. Fig. In the present embodiment, since the conventional method can be used other than the formation of the insulating film, a description thereof will be omitted. In the drawing, A method of depositing a layer over the electrode 124 will be described.

First, a first insulating film 130 is formed. The first insulating film 130 is formed on the surface of the first substrate 102 on which the circuit is formed as shown in FIG. 5A. In the present embodiment, a silicon nitride film is formed by plasma CVD. 2 and 3, the first insulating film 130 is formed on substantially the entire surface of the first substrate 102 on which circuits are formed, but the present invention is not limited thereto. The first insulating film 130 is formed to include at least a portion of the display region 106 and the sealing region 113.

Then, the organic molecules 138 are adsorbed on a part of the first insulating film 130. A mask 136 is disposed on the first insulating film 130 and exposed to organic vapor through the opening of the mask 136 to adsorb the organic molecules 138 as shown in FIG. The end of the mask 136 is disposed so as to be located in the sealing region 113. That is, the mask 136 masks at least the display area 106. [ The organic molecules 138 may be adsorbed by a plurality of circuits using a plurality of masks if the mask is difficult to hold because the opening of the mask has a shape surrounding the display region 106. [ For example, the openings surrounding the display area 106 may be divided into two, and the organic molecules 138 may be separately adsorbed twice. At this time, both of the two masks mask at least the display area 106. [ Each of the openings may be partially overlapped. As the material of the organic molecules, organic molecules such as phthalic acid esters, low-molecular siloxanes, phosphoric acid esters or dibutylhydroxytoluene can be used. However, the organic molecules 138 are not limited to this, and the organic molecules 138 preferably have a high adsorptivity with respect to the first insulating film 130 and a high liquid repellency with respect to the material of the second insulating film 132, . By adsorbing the organic molecules 138 on the surface of the first insulating film 130, the wettability of the material of the second insulating film 132 in the first insulating film 130 is deteriorated and the liquid repellency is increased.

Subsequently, a second insulating film 132 is formed on the first insulating film 130. In the present embodiment, an acrylic resin is formed by an ink-jet method. In Fig. 5B, in the region where the organic molecules are adsorbed in the opening of the mask 136, the wettability is deteriorated and the lyophobicity is increased. On the other hand, the region where the organic molecules on which the mask 136 is disposed is not adsorbed, and the wettability does not change, so that it is lyophilic. As a result, as shown in FIG. 5C, the second insulating film 132 is repelled in the region where the organic molecules are adsorbed, and selectively deposited in the region where the organic molecules are not adsorbed. By using the characteristics of the organic molecules as described above, the film formation position of the second insulating film 132 can be controlled. As shown in Fig. 2, the region for forming the second insulating film 132 is smaller than the region for forming the first insulating film 130, and includes the display region 106 as well. As shown in Fig. 3, the end of the region where the second insulating film 132 is formed is located within the sealing region 113 and within the region where the first insulating film 130 is formed.

Subsequently, the remaining organic molecules 138 on the first insulating layer 130 are removed. The organic molecules 138 of the first insulating film 130 are removed as shown in FIG. 5D. For example, organic molecules on the first insulating film 130 are removed by subjecting the film formation surface to a glow discharge plasma treatment of a gas containing oxygen. However, the present invention is not limited to this. Plasma treatment, UV / O ₃ , laser, or the like can be used as a pretreatment method. As the gas used for the plasma treatment, oxygen, argon, nitrogen, carbon tetrachloride, nitrous oxide and the like can be used. The plasma treatment may be performed at normal pressure or reduced pressure. The process of removing the organic molecules 138 on the first insulating film 130 increases the adhesion of the material of the third insulating film 134 to the first insulating film 130, It is possible to prevent moisture from being generated by the presence of organic substances at the interface of the organic EL element. In addition, the entire surface of the film formation surface is not treated, only the first insulating film 130 on which the organic molecules are adsorbed may be treated, or only a part of the first insulating film 130 may be treated. When only a part of the first insulating film 130 is to be processed, at least a region surrounding the end portion of the second insulating film 132 is processed.

Then, a third insulating film 134 is formed on the first insulating film 130 and the second insulating film 132. In the present embodiment, a silicon nitride film is formed by plasma CVD. In Fig. 5D, the adhesion of the third insulating film 134 to the region where the organic molecules are removed becomes higher. As a result, as shown in FIG. 5E, the third insulating film 134 is formed on the first insulating film 130 and the second insulating film 132. And the third insulating film 134 covers the end portion of the second insulating film 132. By using the characteristics of the organic molecules as described above, the second insulating film 132 can be selectively formed at an intended position. As shown in FIGS. 2 and 3, the third insulating film 134 is formed on substantially the entire surface of the first substrate 102 on which the circuit is formed, like the first insulating film 130, but is not limited thereto Do not. The region where the third insulating film 134 is formed is larger than the region where the second insulating film 132 is formed and the end portion of the region where the third insulating film 134 is formed is larger than the region where the second insulating film 132 is formed It may be located outside the end portion.

According to the film forming method of the present invention, organic molecules are selectively adsorbed to the non-film region of the first insulating film 130, as shown in FIG. 5B, for positioning the end portion of the second insulating film 132. By adsorbing organic molecules on the first insulating film 130, the wettability of the region is deteriorated and the liquid repellency is increased. The region that does not adsorb organic molecules has a lyophilic property because the wettability does not change. As a result, as shown in FIG. 5C, the second insulating film 132 is repelled in the region where the organic molecules are adsorbed, and selectively deposited in the region where the organic molecules are not adsorbed. By using the characteristics of the organic molecules as described above, the film formation position of the second insulating film 132 can be controlled.

The end portion of the second insulating film 132 can be prevented from being exposed from the sealing film by the manufacturing method of the display device using the film forming method according to the present embodiment. Thereby, it is possible to suppress penetration of moisture from the end portion of the insulating film, and it is possible to provide a highly reliable display device. Further, since the position of the sealing film laminated in three layers can be controlled, the sealing region 113 can be designed to be narrow, and the outer peripheral portion of the display region can be made narrower.

&Lt; Third Embodiment >

In the present embodiment and the first embodiment, since the structure of a part of the display apparatus 100 and a part of the manufacturing process are common, a repetitive description will be omitted.

Referring to Fig. 6, a schematic configuration of the display device 100 according to the present embodiment will be described. 6 is a cross-sectional view showing a schematic structure of a display device 100 manufactured using the manufacturing method according to the present embodiment. Fig. 6 shows a cross-sectional view taken along line A-B in Fig. Since the structure of the display device 100 according to the third embodiment is the same as that of the first embodiment except for the constitution of the sealing film, description of the overlapping structure and structure is omitted and mainly different points are explained.

A sealing film is formed on the common pixel electrode 124. For example, in an organic EL display device using an organic EL element as the light emitting element 120, since the organic EL layer is very weak to moisture, when moisture enters from the outside into the panel and reaches the organic EL layer, A light emitting defect point called a spot may occur. As a result, a sealing film is formed so as to cover the display region 106. In the sealing film, it is preferable to use an insulating film capable of blocking the intrusion of moisture, and a multilayer film of an inorganic insulating material and an organic insulating material can be used. For example, when an inorganic insulating material is used, a silicon oxide (SiO _x ), silicon nitride (Si _x N _y ), silicon oxynitride (SiO _x N _y ), silicon nitride oxide (SiN _x O _y ) (Al _x O _y ), aluminum nitride (Al _x N _y ), aluminum oxynitride (Al _x O _y N _z ), aluminum nitride oxide (Al _x N _y O _z ) y and z are arbitrary). As the film forming method, a plasma CVD method or a sputtering method can be used.

As the organic insulating material covering the above-described inorganic insulating film, a polyimide resin, an acrylic resin, an epoxy resin, a silicone resin, a fluororesin, a siloxane resin, or the like can be used. As the film forming method, for example, an ink-jet method can be used. In order to control the film formation position of the organic insulating film, in this embodiment, the adhesion film 131 is formed at the position where the organic insulating film is formed. As the material of the adhesion film 131, inorganic molecules such as silicon oxide and amorphous silicon can be used. By forming the adhesion film 131 on the above-described inorganic insulating film, wettability of the organic insulating material is improved, and a region where the organic insulating film is formed and a region where the organic insulating film is not formed can be formed.

A structure in which an inorganic insulating layer is further laminated on the organic insulating layer may be used. By using the laminated structure of the organic insulating layer and the inorganic insulating layer, it is possible to expect further prevention of invasion of moisture. In the case of a laminated structure, the end of the organic insulating layer is preferably covered with an inorganic insulating layer.

In the present embodiment, the sealing film has a three-layer structure, and the first insulating film 130, the second insulating film 132, and the third insulating film 134 are formed from the lower side. An adhesion film 131 is formed between the first insulating film 130 and the second insulating film 132. Four layers of the first insulating film 130, the adhesion film 131, the second insulating film 132 and the third insulating film 134 are all arranged so as to cover the display region 106. The end portions of the first insulating film 130, the adhesion film 131, the second insulating film 132, and the third insulating film 134 are located outside the end portions of the display region 106.

As the first insulating film 130, an inorganic insulating material or an insulating material of an organic insulating material can be used. As the first insulating film 130, a film having a high water barrier property is preferable, and it is particularly preferable to use an inorganic insulating layer. For example, a silicon nitride film can be used. At this time, a single layer of only the first insulating film 130 can not be sufficiently covered because of irregularities caused by the light emitting element 120 or the like in the display region 106, and thus a partial path of moisture may occur.

Thus, a second insulating film 132 for securing high flatness is formed as a second layer. As the second insulating film 132, an organic insulating layer such as acrylic can be used. As shown in Fig. 6, the region of the second insulating film 132 includes the display region 106, but does not include the first driving circuit 111. [ The end portion of the second insulating film 132 is located in the sealing region 113 between the display region 106 and the first driving circuit 111. [ In the present embodiment, the adhesion film 131 is formed in advance at the position where the second insulating film 132 is formed. The end portion of the adhesion film 131 is located in the sealing region 113 between the display region 106 and the first driving circuit 111. As the material of the adhesion film 131, inorganic molecules such as silicon oxide and amorphous silicon can be used. By forming the adhesion film 131 on the first insulating film 130, the wettability of the organic insulating material in the region where the adhesion film 131 is formed is improved and the region where the second insulating film 132 is formed is not formed Regions can be formed.

The third insulating film 134 is formed on the second insulating film 132 having improved flatness. Because of planarization by the second insulating film 132, the third insulating film 134 has a high covering property, and generation of the propagation path of moisture can be suppressed. As the third insulating film 134, an inorganic insulating material or an insulating material of an organic insulating material can be used. The third insulating film 134 is preferably a film having a high water barrier property. For example, an inorganic insulating material such as a silicon nitride film is preferably used.

In the present embodiment, the first insulating film 130 and the third insulating film 134 cover the adhesion film 131 and the second insulating film 132 at the ends of the stacked insulating films. 6, the first insulating film 130 and the third insulating film 134 are larger than the adhesion film 131 and the second insulating film 132, and the thicknesses of the adhesion film 131 and the second insulating film 132 The first insulating film 130 and the third insulating film 134 are in contact with each other at the outer side of the end portion. By employing such a structure, particularly, the end portion of the second insulating film 132 is prevented from being exposed. When the organic insulating layer is used as the second insulating film 132, if the end portion is exposed, it can be an intrusion path of moisture invaded from the outside. The moisture penetrating from the end portion of the second insulating film 132 may propagate to the light emitting device 120, thereby reducing the life of the display device 100.

The first insulating film 130 and the third insulating film 134 are formed so as to cover the adhesion film 131 and the second insulating film 132 at the ends of the stacked insulating films as in the present embodiment, It is possible to suppress the ingress of moisture from the end portion, and it is possible to provide a highly reliable display device. In addition, when used in combination with the sealing structure of the conventional sealing material 110, the resistance to moisture can be further improved, and a highly reliable display device can be provided. Further, the sealing region 113 can be narrowly designed by the structure of the laminated insulating film according to the present embodiment, and the outer peripheral portion of the display region can be made narrower.

<Manufacturing Method>

In the film forming method according to the first embodiment, organic molecules are adsorbed on substantially the entire surface of the first insulating film 130, and then organic molecules (not shown) in the film forming region of the second insulating film 132 on the first insulating film 130 And the second insulating film 132 was formed. In the film forming method according to the second embodiment, organic molecules are adsorbed on the non-film region of the second insulating film 132 on the first insulating film 130, and the second insulating film 132 is formed. An adhesion film 131 made of silicon oxide or amorphous silicon is formed in the film formation region of the second insulation film 132 on the first insulation film 130 and a second insulation film 132 is formed on the adhesion film 131 132 are formed. At this time, the adhesion film 131 is not formed on the base side of the outer region surrounding the display region, that is, on the outer side. As a result, the second insulating film 132 is not formed in a part of the outer region near the base.

7A to 7E, a manufacturing method of the display device 100 according to the present embodiment will be described. In the present embodiment, since the conventional method can be used other than the formation of the insulating film, a description thereof will be omitted. In the drawing, A method of depositing a layer over the electrode 124 will be described.

First, a first insulating film 130 is formed. The first insulating film 130 is formed on the surface of the first substrate 102 on which the circuit is formed, as shown in FIG. 7A. In the present embodiment, a silicon nitride film is formed by plasma CVD. As shown in Fig. 7A, the first insulating film 130 is formed on substantially the entire surface of the first substrate 102 on which circuits are formed, but the present invention is not limited to this. The first insulating film 130 is formed to include at least a portion of the display region 106 and the sealing region 113.

Then, the adhesion film 131 is formed on a part of the first insulating film 130. 7B, a mask 136 may be disposed on the first insulating film 130 and may be formed by a CVD method using a plasma, a sputtering method using a target, or other methods through an opening of the mask 136 A film 131 is formed. The opening end of the mask 136 is disposed so as to be located in the sealing region 113. That is, the opening of the mask 136 exposes at least the display region 106. As the material of the adhesion film 131, inorganic molecules such as silicon oxide and amorphous silicon can be used. However, the present invention is not limited to this, and the adhesion film 131 is preferably a material having high adsorption to the first insulating film 130 and high adhesion to the material of the second insulating film 132. The wettability of the material of the second insulating film 132 is improved and the second insulating film 132 is formed in the region where the adhesion film 131 is formed by forming the adhesion film 131 on the surface of the first insulating film 130 It is possible to form a region which is not formed with the region.

Subsequently, the second insulating film 132 is formed on the adhesion film 131. In the present embodiment, an acrylic resin is formed by an ink-jet method. In Fig. 7B, the region where the adhesion film 131, which is the opening portion of the mask 136, is formed has improved wettability and lyophilic property. On the other hand, in the region covered by the mask 136, the wettability does not change and the liquid repellency becomes relatively high. As a result, as shown in Fig. 7C, the second insulating film 132 is selectively formed in the region where the adhesion film 131 is formed. By using the characteristics of the adhesion film in this way, the film formation position of the second insulation film 132 can be controlled. The region where the adhesion film 131 and the second insulating film 132 are formed is smaller than the region where the first insulating film 130 is formed and includes the display region 106 as shown in Fig. 6, the end portion of the region where the adhesion film 131 and the second insulating film 132 are formed is located within the region where the first insulating film 130 is formed and also within the sealing region 113 .

Then, a glow discharge plasma treatment of a gas containing nitrous oxide may be performed on the first insulating film 130 and the second insulating film 132. By performing the glow discharge plasma treatment, water repellent substances such as organic molecules on the first insulating film 130 and the second insulating film 132 are removed. However, the present invention is not limited thereto, and various methods can be used for the treatment for removing the organic molecules and the like on the first insulating film 130 and the second insulating film 132. The first insulating film 130 and the second insulating film 132 are removed to remove organic molecules and the like on the first insulating film 130 and the second insulating film 132, The adhesion is enhanced. Further, the entire surface of the film formation surface is not processed, only the first insulating film 130 may be treated, or only a part of the first insulating film 130 may be processed. When only a part of the first insulating film 130 is to be processed, at least a region surrounding the end portion of the second insulating film 132 is processed.

Then, a third insulating film 134 is formed on the first insulating film 130 and the second insulating film 132. In the present embodiment, a silicon nitride film is formed by plasma CVD. In FIG. 7D, the adhesion of the third insulating film 134 to the region where the organic molecules and the like are removed becomes high. As a result, as shown in FIG. 7E, the third insulating film 134 is formed on the first insulating film 130 and the second insulating film 132. The third insulating film 134 has a structure covering the end portions of the adhesion film 131 and the second insulating film 132. By using the characteristics of the adhesion film 131 as described above, the second insulating film 132 can be selectively formed at an intended position. 6, the third insulating film 134 is formed on substantially the entire surface of the first substrate 102 on which the circuit is formed, as in the case of the first insulating film 130, but the present invention is not limited to this. The region where the third insulating film 134 is formed is larger than the region where the adhesion film 131 and the second insulating film 132 are formed and the end portion of the region where the third insulating film 134 is formed is the adhesion film 131, And the end of the region where the second insulating film 132 is to be formed.

7B, in order to position the end portion of the second insulating film 132, the first insulating film 130 is selectively formed in the film forming region of the second insulating film 132. In this case, The adhesion film 131 is formed. By forming the adhesion film 131 on the first insulating film 130, the wettability of the region where the adhesion film 131 is formed is improved and the lyophilic property is enhanced. As a result, as shown in Fig. 7C, the second insulating film 132 is selectively formed in the region where the adhesion film 131 is formed. By thus utilizing the characteristics of the adhesion film 131, the film formation range of the second insulation film 132 can be controlled.

It is possible to prevent the end portions of the adhesion film 131 and the second insulating film 132 from being exposed from the sealing film by the manufacturing method of the display device using the film forming method according to the present embodiment. As a result, it is possible to suppress moisture infiltration from the end portion of the insulating film, thereby providing a highly reliable display device. Further, since the position of the sealing film laminated in three layers can be controlled, the sealing region 113 can be designed to be narrow, and the outer peripheral portion of the display region can be made narrower.

The display device 100 according to the preferred embodiment of the present invention and the manufacturing method thereof have been described above. However, these are merely examples, and the technical scope of the present invention is not limited to them. In fact, those skilled in the art can make various changes without departing from the gist of the invention claimed in the claims. It is therefore to be understood that these changes are also within the technical scope of the present invention.

100: display device
102, 104: substrate
106: display area
108: pixel
110: Seal material
111: first driving circuit
112: second driving circuit
113: sealing area
114: terminal area
116: connection terminal
118: transistor
120: Light emitting element
122: an individual pixel electrode
124: common pixel electrode
126:
128: Bank
130: first insulating film
131: Adhesive film
132: second insulating film
134: third insulating film
136: Mask
138: organic molecule

Claims (17)

A first insulating film is formed on a surface of the substrate having a display region in which a plurality of display elements are arranged,
Organic molecules are adsorbed on substantially the entire surface of the first surface of the first insulating film opposite to the substrate,
Removing the organic molecules adsorbed on the first region of the first insulating film which is defined as an inside region including the display region and not reaching the end portion of the first insulating film,
Forming a second insulating film in the first region where the organic molecules are removed in the first insulating film,
Removing the organic molecules adsorbed outside the first region of the first insulating film,
Forming a third insulating film on the first insulating film and the second insulating film, the third insulating film being in contact with the first insulating film outside the second insulating film
And a step of forming the display device. The manufacturing method of a display device according to claim 1, wherein a mask having an opening for exposing the first region is disposed on the first insulating film and a plasma process is performed to remove the organic molecules. 3. The method according to claim 2, wherein the plasma treatment is performed with a glow discharge plasma of a gas containing oxygen. The method according to claim 1, wherein the organic molecules are molecules of one or more organic materials selected from phthalic acid esters, low-molecular siloxanes, phosphoric acid esters, or dibutylhydroxytoluene. The manufacturing method of a display device according to claim 4, wherein the organic molecules increase the liquid repellency of the first surface of the first insulating film. A first insulating film is formed on a surface of the substrate having a display region in which a plurality of display elements are arranged,
A first insulating film formed on the first surface of the first insulating film opposite to the substrate and masking a first region including the display region and defined as an inner region not reaching an end of the first insulating film; Adsorbing organic molecules,
Forming a second insulating film in the first region in which the organic molecules are not adsorbed in the first insulating film,
Removing the organic molecules adsorbed outside the first region of the first insulating film,
Forming a third insulating film on the first insulating film and the second insulating film, the third insulating film being in contact with the first insulating film outside the second insulating film
And a step of forming the display device. The method according to claim 6, wherein the organic molecules are molecules of one or more organic materials selected from phthalic acid esters, low-molecular siloxanes, phosphoric acid esters, or dibutylhydroxytoluene. 8. The method according to claim 7, wherein the organic molecules increase the liquid repellency of the first surface of the first insulating film. A first insulating film is formed on a surface of the substrate having a display region in which a plurality of display elements are arranged,
A first insulating film formed on the first surface of the first insulating film opposite to the substrate, the first insulating film including the display region except for a first region defined as an inner region that does not reach an end of the first insulating film; , And a film
Forming a second insulating film in the first region where the adhesion film is formed in the first insulating film,
Forming a third insulating film on the first insulating film and the second insulating film, the third insulating film being in contact with the first insulating film outside the second insulating film
And a step of forming the display device. 10. The method of manufacturing a display device according to claim 9, wherein the adhesion film is formed in the first region and is not formed in an area outside the first region. The method of manufacturing a display device according to claim 10, wherein the adhesion film is silicon oxide or amorphous silicon. The manufacturing method of a display device according to claim 11, wherein the adhesion film enhances adhesion of the second insulating film. The display device according to claim 1, wherein an end of the second insulating film is formed outside the end portion of the display region, and an end portion of the first insulating film and an end portion of the third insulating film are formed outside the end portion of the second insulating film Of the display device. 14. The apparatus of claim 13, wherein the substrate further comprises a drive circuit region including a drive circuit,
And the first region is formed outside the driving circuit region. The manufacturing method of a display device according to claim 14, wherein the end portion of the second insulating film is formed between the end portion of the display region and the end portion of the drive circuit region. The method of manufacturing a display device according to claim 15, wherein the second insulating film is formed by an ink jet method. The manufacturing method of a display device according to claim 16, wherein the second insulating film is formed using an organic insulating material.

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