KR20160054073A - Display device and display panel - Google Patents

Abstract

A display device according to the embodiment of the present invention includes a plurality of pixels including a plurality of switch devices, at least one capacitor, and a semiconductor light emitting device; and a driving circuit part which applies a current to the semiconductor light emitting device by the plurality of switch devices and the at least one capacitor. The plurality of pixels individually include one semiconductor light emitting device. The semiconductor light emitting device emits read, green, and blue light by the current applied by the driving circuit part. Natural color can be realized with low power driving.

Description

[0001] DISPLAY DEVICE AND DISPLAY PANEL [0002]

The present invention relates to a display device and a display panel.

Among flat panel displays (FPDs), an organic light emitting display (OLED) capable of emitting light by itself can be disposed for each pixel Unlike a liquid crystal display, a separate backlight unit is not necessary. Due to the above advantages, the organic light emitting display device has widened its application range.

However, since the organic light emitting display device has a low light conversion efficiency of the organic light emitting device disposed in each pixel, it is difficult to apply the organic light emitting display device to an apparatus requiring low power driving. Therefore, when it is applied to a wearable electronic device, which is currently being commercialized in various fields, it is a cause of increasing battery consumption, and thus it is difficult to apply to a wearable electronic device. In addition, since the organic electroluminescent device emitting light of any one of red (R), green (G) and blue (B) is disposed in one pixel, The overall color of the image can be changed.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a display device and a display panel capable of driving at a low power and realizing a more natural color feeling by associating a pixel with a light emitting device on a one-to-one basis.

A light emitting device according to an embodiment of the present invention includes a plurality of pixels each including a plurality of switch elements, at least one capacitor, and a semiconductor light emitting element, and a plurality of pixels including the plurality of switch elements and the at least one capacitor, And a driving circuit for applying a current to the device, wherein each of the plurality of pixels includes the semiconductor light emitting device one by one, and the semiconductor light emitting device emits red, green, and blue light by a current applied by the driving circuit And emits light.

In some embodiments of the present invention, the semiconductor light emitting device may include first to third light emitting regions emitting red, green, and blue light.

In some embodiments of the present invention, the first to third light emitting regions are formed by a current applied through one common n-type electrode and different first to third p-type electrodes, respectively, to red, green, and blue light .

In some embodiments of the present invention, at least one of the one common n-type electrode and the first to third p-type electrodes is formed by a wire on a substrate on which the plurality of switch elements and the at least one capacitor are arranged Can be mounted.

In some embodiments of the present invention, the semiconductor light emitting element may be flip-chip bonded onto a substrate on which the plurality of switch elements and the at least one capacitor are disposed.

In some embodiments of the present invention, the semiconductor light emitting device may include a plurality of nanocores including an n-type semiconductor, an active layer sequentially formed on the nanocore, and a p-type semiconductor layer.

In some embodiments of the present invention, the intervals between the plurality of nanocores in the first to third light emitting regions may be different from each other.

In some embodiments of the present invention, the semiconductor light emitting device may include a light shielding region disposed at a boundary between the first to third regions.

A display panel according to an embodiment of the present invention is a display panel having a plurality of pixels, each of the plurality of pixels including a pixel circuit having a plurality of switch elements and at least one capacitor, and a red, green, and blue light And a semiconductor light emitting device for emitting light.

A display panel according to an embodiment of the present invention is a display panel having a plurality of pixels, wherein each of the plurality of pixels is different from the common n-type electrode and the first to third p- A first semiconductor light emitting element including first to third light emitting regions for emitting light of a first color and a third color and a second light emitting region connected to the first to third p- To a third pixel circuit.

According to various embodiments of the present invention, organic light emitting elements disposed in each pixel in a conventional display device are replaced with semiconductor light emitting elements. Particularly, by applying a semiconductor light emitting device capable of emitting red, green, and blue light in a single chip to a display device, it is possible to perform low power driving and realize a natural color feeling It is possible to provide a display device having a display device.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1 is a block diagram briefly showing a display device according to an embodiment of the present invention.
2 is a circuit diagram showing pixels included in a display device and a display panel according to an embodiment of the present invention.
FIGS. 3 to 6 illustrate a semiconductor light emitting device that can be employed in a display device and a display panel according to an embodiment of the present invention.
7 and 8 are views showing electronic devices to which a display device according to an embodiment of the present invention can be applied.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

The embodiments of the present invention may be modified into various other forms or various embodiments may be combined, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a block diagram briefly showing a display device according to an embodiment of the present invention.

1, a display device 10 according to an embodiment of the present invention includes a display panel 20 having M x N pixels (M and N are natural numbers of 2 or more) And a driving circuit unit 30 for driving each included pixel to display an image. The driving circuit unit 30 may include a power supply unit 31, a scan driver 32, a data driver 33, a controller 34, and the like.

The display panel 20 may include a plurality of pixels P ₁₁ -P _MN arranged in matrix form along M rows and N columns. Each of the plurality of pixels P ₁₁ -P _MN can receive a driving voltage V _DD and a reference voltage V _REF required for driving from the power supply unit 31. Each of the plurality of pixels P _{11 to} P _{MN is} connected to the scan driver 32 through a plurality of scan lines and may be connected to the data driver 33 through a plurality of data lines.

For example, the pixel P ₁₁ located in the first row and the first column is connected to the scan driver 32 through three scan lines SCAN _1R , SCAN _1G , and SCAN _1B , and three data lines DATA _1R , DATA _1G , and DATA _1B ). Controller 34 pixels of each scan line which is connected to a _{(P 11) (SCAN 1R,} SCAN 1G, SCAN 1B) and comprises a through each data line _{(DATA 1R, DATA 1G, DATA} 1B), the pixel (P ₁₁₎ It is possible to independently drive the plurality of light emitting regions of one nitride semiconductor light emitting device.

Each of the plurality of pixels P ₁₁ -P _MN may include one nitride semiconductor light emitting device. That is, one pixel P ₁₁ -P _MN may include one nitride based semiconductor light emitting device, and the display panel 20 may include a total of M x N nitride based semiconductor light emitting devices. The nitride-based semiconductor light emitting device included in each pixel P ₁₁ -P _MN can emit red light, green light, and blue light. The nitride-based semiconductor light emitting device included in each pixel P ₁₁ -P _MN may include first to third light emitting regions that emit red light, green light, and blue light, respectively, The scan lines SCAN _1R , SCAN _1G and SCAN _1B and the data lines DATA _1R , DATA _1G and DATA _1B .

In order to emit red light, green light, and blue light, the nitride-based semiconductor light emitting device included in each pixel P ₁₁ -P _MN may include a plurality of nano-light emitting structures. In each of the first to third light emitting regions emitting light of different colors, the plurality of nano light emitting structures may have different intervals, different widths, or different heights. Further, in order to prevent red light, green light, and blue light from being mixed with each other in the nitride based semiconductor light emitting device, a light blocking area may be provided between the first to third light emitting areas.

The driving circuit unit 30 may transmit a predetermined electric signal to a plurality of pixels P ₁₁ -P _MN included in the display panel 20 to display image data transmitted from the outside. The power supply unit 31 supplies the driving voltage V _DD and the reference voltage V _REF necessary for the nitride-based semiconductor light emitting device included in each pixel P ₁₁ -P _MN to light emission to the pixels P ₁₁ -P _MN .

The controller 34 can generate a predetermined timing control signal for displaying image data transmitted from the outside and controls the operation timing of the scan driver 32 and the data driver 33 based on the timing control signal . In one embodiment, the scan driver 32 generates a scan signal that is shifted in units of one hour according to a timing control signal transmitted from the controller 34, and generates a plurality of scan lines (SCAN _1R -SCAN _{MR ,} SCAN _1G -SCAN _MG , SCAN _1B -SCAN _MB ).

The data driver 33 is a driving voltage (V _DD) to control a plurality of data lines _{(DATA 1R -DATA MR, DATA 1G} -DATA MG, DATA 1B -DATA MB) in accordance with the timing control signal to the controller 34 generating And the reference voltage V _REF to each pixel P ₁₁ -P _MN . In one embodiment, the data driver 33 is connected to a pixel (P ₁₁ -P _MN ) to which a scan signal is applied among a plurality of scan lines (SCAN _1R -SCAN _{MR ,} SCAN _1G -SCAN _MG , SCAN _1B -SCAN _MB ) The driving voltage V _DD and the reference voltage V _{REF can be} supplied to the corresponding pixel P ₁₁ -P _MN by controlling the data lines DATA _1R -DATA _MR , DATA _1G -DATA _MG and DATA _1B -DATA _MB . have. The nitride based semiconductor light emitting device emits light at the pixels P ₁₁ -P _MN supplied with the driving voltage V _DD and the reference voltage V _REF , so that the display device 10 can display an image.

2 is a circuit diagram showing pixels included in a display device and a display panel according to an embodiment of the present invention.

2, the pixel P included in the display panel 20 includes a plurality of switching elements (TFT _R1- TFT _B2 ), a plurality of capacitors (C _R -C _B ), and one semiconductor light emitting element ). The semiconductor light emitting device (LED) may be an n-type semiconductor light emitting device, and may include an n-type semiconductor layer for supplying electrons, a p-type semiconductor layer for supplying holes, and an active layer disposed between the n- Lt; / RTI > The semiconductor light emitting device (LED) is a drive voltage (V reference voltage through one of the n-type electrode and a plurality of switching elements is a receiving (V _{REF) (R1} -TFT _B2 TFT) and a capacitor (C _R -C _{B) DD} ) to which the p-type electrode is applied.

In one embodiment, the semiconductor light emitting device (LED) may have first to third light emitting regions that emit red light, green light, and blue light, and the plurality of p-type electrodes may be formed in the first to third light emitting regions And may include corresponding first to third p-type electrodes. When the first light emitting region emits red light, the first p-type electrode may receive the driving voltage (V _DD ) through the red switch elements (TFT _R1 , TFT _R2 ) and the red capacitor (C _R ). Similarly, when the second light emitting region emits green light, the second p-type electrode may receive the driving voltage V _DD through the green switch elements (TFT _G1 , TFT _G2 ) and the green capacitor (C _G ) have. When the third light emitting region emits blue light, the third p-type electrode can receive the driving voltage (V _DD ) through the blue switching elements (TFT _B1 , TFT _B2 ) and the blue capacitor (C _B ) .

As shown in FIG. 2, the gate terminal of the first red switch element TFT _R1 may be connected to the red scan line SCAN _R. Therefore, when a scan signal is applied through the red scan line SCAN _R and the first red switch element TFT _{R 1} is turned on, the data signal applied to the red data line DATA _R is applied to the red capacitor C _R , The charge can be charged. The data signal applied to the red data line DATA _R turns on the second red switch element TFT _R 2 and the drive voltage V _DD is applied to the first p- And red light can be generated in the first light emitting region of the semiconductor light emitting device (LED). At this time, even after the scan signal is cut off, the first light emitting region of the semiconductor light emitting device (LED) can continuously generate red light for a predetermined time by the charge charged in the red capacitor (C _R ).

In the same manner as described above, the second and third light emitting regions of the semiconductor light emitting device (LED) can generate green light and blue light. Accordingly, the red light, the green light, and the blue light generated by a single semiconductor light emitting device (LED) can be independently controlled, so that a single semiconductor light emitting device (LED) 20). The total number of the semiconductor light emitting devices LEDs may be determined based on the total number of pixels P ₁₁ -P _MN included in the display panel 20, N pieces.

On the other hand, in FIG. 2, a plurality of switching elements (TFT _{R1 to} TFT _B2 ) included in one pixel P are allocated to each of the first to third light emitting regions of the semiconductor light emitting element (LED) The pixel circuit is implemented by a 2T-1C structure in which a plurality of capacitors (C _R- C _B ) included in the first to third light emitting regions are assigned to the first to third light emitting regions. However, no. That is, each pixel P may include various types of pixel circuits such as a voltage programming method, a current programming method, and a current mirror method, as shown in FIG.

FIGS. 3 to 6 illustrate a semiconductor light emitting device that can be employed in a display device and a display panel according to an embodiment of the present invention.

3, the semiconductor light emitting device 100 that may be employed in the display device 10 and the display panel 20 according to an embodiment of the present invention may have an epi-up structure . The semiconductor light emitting device 100 includes a substrate 110, a base layer 120 provided on the substrate 110, an insulating layer 130 provided on the base layer 120, and a plurality of And may include nano-light-emitting structures 140, 150, and 160.

The substrate 110 may be an insulating, conductive, or semiconductor substrate. For example, the substrate 110 may include materials such as sapphire, SiC, Si, MgAl ₂ O ₄ , MgO, LiAlO ₂ , LiGaO ₂ , GaN and the like. The base layer 120 may be a nitride semiconductor that satisfies Al _x In _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) Type dopant such as Si so as to have the same conductivity type. On the other hand, the base layer 120 may be formed on the substrate 110. The base layer 120 not only provides a growth surface for the nano-light-emitting structures 140, 150 and 160 but also can electrically connect one polarity of the plurality of nano-light-emitting structures 140, 150 and 160 .

The insulating layer 130 may be provided on the base layer 120 to provide a plurality of openings through which a plurality of nano-light emitting structures 140, 150, and 160 may be formed. The insulating film 130 may be a kind of mask layer having a plurality of openings. The nanocores 141, 151, and 161 can be formed by disposing the insulating layer 130 on the base layer 120 and growing the base layer 120 through a plurality of openings. The nano cores 141, 151, and 161 may include n-type semiconductors. For example, the nano cores 141, 151, and 161 may include n-type GaN. The sides of the nanocores 141, 151, and 161 may be non-polar m-planes. On the other hand, the insulating film 130 may include a silicon oxide or an actual cone-molten metal as an insulating material. For example, the insulating layer 130 may include a material such as SiO ₂ , SiN, TiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiN, AlN, ZrO ₂ , TiAlN, TiSiN,

The active layers 142, 152 and 162 and the p-type semiconductor layers 143, 153 and 163 may be sequentially formed on the nano-cores 141, 151 and 161. The active layers 142, 152 and 162 may be GaN / InGaN structures in the case of a multi quantum well (MQW) structure in which a quantum well layer and a quantum barrier layer are alternately stacked, for example, a nitride semiconductor, A well (SQW) structure may be used. p-type semiconductor layer (143, 153, 163) may include a _{-x- y} N p-type Al _x In _y Ga _1. On the p-type semiconductor layers 143, 153, and 163, transparent conductive layers 170A, 170B, and 170C including a transparent conductive material such as ITO, ZnO, and IZO may be disposed.

The active layers 142, 152, and 162 may be formed to cover the side surfaces and the upper surface of the nanocores 141, 151, and 161, respectively. In the present embodiment, the active layers 142, 152, and 162 may be formed on the surfaces of the respective nanocores 141, 151, and 161 by a batch process. At this time, when the diameters and heights of the nanocores 141, 151, and 161 or the intervals between the nanocores 141, 151, and 161 are different, the active layer having different compositions due to lattice constant, specific surface area, 142, 152, and 162 may be formed, and the wavelength of light generated from each of the nano-light emitting structures 140, 150, and 160 may be varied. Specifically, when the quantum well layer constituting the active layer is In _x Ga _{1 - x} N (0 _{? X} ? 1), indium (In) content may vary depending on nanocores having different diameters from each other. As a result, the wavelength of light emitted from each quantum well layer can be varied.

The semiconductor light emitting device 100 may have a light emitting region 105. The light emitting region 105 may include first, second, and third light emitting regions 105A, 105B, and 105B that generate red light, green light, 105C). A light blocking region 190 may be disposed between the first to third light emitting regions 105A, 105B, and 105C. The light shielding region 190 can electrically isolate the p-type semiconductor layers 143, 153, and 163 included in the first to third light emitting regions 105A, 105B, and 105C from each other. The nano cores 141, 151, and 161 included in the first to third light emitting regions 105A, 105B and 105C are electrically connected to the common n-type electrode 125 formed on the base layer 120, The p-type semiconductor layers 143, 153 and 163 may be connected to different p-type electrodes 180A, 180B and 180C in the first to third light emitting regions 105A, 105B and 105C, respectively.

Accordingly, the first to third light emitting regions 105A, 105B, and 105C of the semiconductor light emitting device 100 can generate light independently of each other. In one embodiment, the p-type electrode 180A included in the first light emitting region 105A may be connected to the second red switch element TFT _R2 in the pixel circuit. Therefore, the plurality of nano-light-emitting structures 140 included in the first luminescent region 105A are formed by the currents applied by the first and second red switch elements TFT _R1 and TFT _R2 and the red capacitor C _R Red light can be generated. At this time, since the currents applied by the first and second red switching elements TFT _R1 and TFT _R2 and the red capacitor C _R are applied only to the p-type electrode 180A of the first light emitting region 105A, , And the nano-light emitting structures 150 and 160 included in the third light emitting regions 105B and 105C may not emit light.

Similarly, the p-type electrode 180B included in the second light emitting region 105B is supplied with current by the first and second green switching elements TFT _G1 and TFT _G2 and the green capacitor C _G , The p-type electrode 180C included in the third light emitting region 105C can be supplied with current by the first and second blue switching elements TFT _B1 and TFT _B2 and the green capacitor C _B. A switching element (TFT _R1 -TFT _B2) and the capacitor (C _R -C _B), the different scan lines for each color of light (SCAN _{1R, 1G} SCAN, SCAN _1B) and data lines (DATA _{1R, 1G} DATA, DATA _1B So that the p-type electrodes 180A, 180B, and 180C can receive currents independently of each other. Therefore, various colors can be realized with one semiconductor light emitting device 100.

Referring to FIG. 3, a nano-light-emitting structure 140 may be formed in the first light-emitting region 105A to have a relatively larger gap than the other second and third light-emitting regions 105B and 105C. In one embodiment, the first light emitting region (105A), the spacing between the light emitting nano-structure 140 may be a distance d ₁ is 1600-2300nm between the second luminescent region (105B) the light emitting nano-structure 150 in the d ₂ may be 1200 to 1600 nm, and the interval d ₃ between the nano-light emitting structures 160 in the third light emitting region 105C may be 1000 to 1200 nm. D2 and d3 are set in the numerical range as described above and the nano-luminous structures 140, 150 and 160 are formed such that the difference between d1, d2 and d3 is at least 200 nm, It is possible to generate light of various colors provided by mixing red light, green light, and blue light as well as three colors of light.

The widths and heights of the nanocores 141, 151, and 161 included in the first to third light emitting regions 105A, 105B and 105C are substantially the same as each other. However, 151, and 161 may be adjusted to generate red light, green light, and blue light by the respective nano light emitting structures 140, 150, and 160. For example, as the diameter of each of the nano cores 141, 151, and 161 decreases, the active layers 142, 152, and 162 included in the nano-light emitting structures 140, The composition ratio increases, and the wavelength of the light emitted by each of the nano-light emitting structures 140, 150, and 160 may be lengthened. The nanocore 141 included in the first light emitting region 105A has the smallest diameter and the nanocore 161 included in the third light emitting region 105C has the largest diameter, 151, and 161 are formed so that each of the first to third light emitting regions 105A, 105B, and 105C can generate red light, green light, and blue light.

On the other hand, as the height of the nanocores 141, 151, and 161 is lower, the active layers 142, 152 and 62 become thicker and the active layers 142, 152 and 162 ) Can be increased. The nanocore 141 included in the first light emitting region 105A is formed to have the lowest height and the nanocore 161 included in the third light emitting region 105C is formed to have the highest height, Green, and blue light can be generated by the third light emitting regions 105A, 105B, and 105C, respectively.

Meanwhile, the p-type semiconductor layers 143, 153, and 163 may further include an electron blocking layer formed in a portion adjacent to the active layers 142, 152, and 162. The electron blocking layer may have a structure in which n-type Al _x In _y Ga _{1 -x- y} N of a plurality of different compositions are laminated or one or more layers composed of Al _y Ga _(1-y) N. The electron blocking layer may have a band gap larger than that of the active layers 142, 152, and 162, and electrons can be prevented from falling to the p-type semiconductor layers 143, 153, and 163.

The p-type semiconductor layers 143, 153, and 163 may include GaN doped with a p-type impurity, unlike the nano cores 141, 151, and 161 including an n-type semiconductor. Si is well known as an n-type impurity contained in the nano cores 141, 151, and 161 as a doping material. As the p-type impurity applied to the p-type semiconductor layers 143, 153, and 163, Zn, Cd, Mg, Ca and Ba, and mainly Mg and Zn may be used.

4, the semiconductor light emitting device 200, which may be employed in the display device 10 and the display panel 20 according to an exemplary embodiment of the present invention, may have a flip chip structure . The semiconductor light emitting device 200 includes a substrate 210, a base layer 220 provided on the substrate 210, an insulating layer 230 provided on the base layer 220, and a plurality of And may include nano-light-emitting structures 240, 250, 260.

The substrate 210 may be an insulating, conductive, or semiconductor substrate, and light generated from the nano-light emitting structures 240, 250, and 260 may be emitted to the outside through the substrate 210 to have a high light transmittance. The base layer 220 may be a nitride semiconductor that satisfies Al _x In _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) Type dopant such as Si to have a thickness of about 10 mu m.

The insulating layer 230 may be provided on the base layer 220 to provide a plurality of openings through which the plurality of nano-light emitting structures 240, 250 and 260 may be formed. The insulating layer 230 may be a kind of mask having a plurality of openings Layer. The base layer 220 may be grown through a plurality of openings of the insulating layer 230 to form the nanocores 241, 251, and 261. The nano cores 241, 251 and 261 may include n-type semiconductors. For example, the nano cores 241, 251 and 261 may include n-type GaN.

The active layers 242, 252, and 262 and the p-type semiconductor layers 243, 253, and 263 may be sequentially formed on the nano-cores 241, 251, and 261. The active layers 242, 252, and 262 may have a multiple quantum well (MQW) structure in which a quantum well layer and a quantum barrier layer are alternately stacked, and in another embodiment, a single quantum well (SQW) structure. On the p-type semiconductor layer (243, 253, 263) is a p-type Al _x In _y Ga ₁ may comprise a _{-x- y} N, the p-type semiconductor layer (243, 253, 263), such as ITO, ZnO, IZO A transparent conductive layer 270A, 270B, or 270C including a transparent conductive material may be disposed. The p-type semiconductor layers 243, 253, and 263 may include impurities such as Zn, Cd, Be, Mg, Ca, and Ba.

The active layers 242, 252 and 262 and the p-type semiconductor layers 243, 253 and 263 may be formed to cover the side surfaces and the upper surfaces of the nanocores 241, 251 and 261. In the embodiment of the present invention, when the diameters or heights of the nanocores 241, 251, and 261 or the intervals between the nanocores 241, 251, and 261 are different, they are different from each other due to lattice constant, specific surface area, The active layers 242, 252, and 262 may be formed in the active layer 240 and the wavelengths of light generated in the respective nano-light emitting structures 240, 250, and 260 may be varied.

As the diameters and heights of the nanocores 241, 251 and 261 decrease, as the thickness of the active layers 242, 252 and 262 increases and the content of indium (In) increases, the active layer 242 , 252, and 262 may be longer. Also, when the distance between the nanocores 241, 251, and 261 increases, the wavelength of light generated in the active layers 242, 252, and 262 may be longer. Therefore, in the embodiment of the present invention, the diameters and heights of the nanocores 241, 251, and 261 and the spacing between the nanocores 241, 251, and 261 are appropriately adjusted so that the first to third light emitting regions 205A, 205B, 205C may generate red light, green light, and blue light, respectively.

That is, the semiconductor light emitting device 200 may have a light emitting region 205, and the light emitting region 205 may include first, second, and third light emitting regions 205A, 205B, and 205C. A light blocking region 290 may be disposed between the first to third light emitting regions 205A, 205B, and 205C. The light shielding region 290 can separate the p-type semiconductor layers 243, 253, and 263 included in the first to third light emitting regions 205A, 205B, and 205C from each other. The nano cores 241, 251 and 261 are electrically connected to a common n-type electrode 225 formed on the base layer 220. The p-type semiconductor layers 243, 253 and 263 are electrically connected to the first, The transparent conductive layers 270A, 270B, and 270C and the p-type electrodes 180A, 180B, and 180C in the regions 205A, 205B, and 205C, respectively. Thus, the first to third light-emitting area (205A, 205B, 205C) in the p-type semiconductor layer (243, 253, 263) of the semiconductor light emitting device 200, a different switching element of a pixel circuit (TFT _R1 -TFT _B2 ) And a capacitor (C _{R -} C _B ), and can independently generate light of different colors.

Referring to FIG. 4, the first light emitting region 205A may have a relatively larger spacing than the second and third light emitting regions 205B and 205C. In one embodiment, the first to third light-emitting area (205A, 205B, 205C) distance d _1, between the nano-core (241, 251, 261) within d _2, nano the difference d ₃ so that they are at least 200nm By forming the light emitting structures 240, 250 and 260, it is possible to generate light of various colors provided by mixing three colors of light as well as red light, green light, and blue light in one semiconductor light emitting device 200 have.

The diameters and heights of the nanocores 241, 251, and 261 included in the first to third light emitting regions 205A, 205B, and 205C are substantially the same as each other. Alternatively, the nanocores 241 251 and 261 may be controlled so that the respective nano-light emitting structures 240, 250 and 260 generate red light, green light, and blue light. At this time, the diameter or height of each of the nanocores 241, 251, and 261 may be the smallest in the first light emitting region 205A, and may be the largest in the third light emitting region 205C.

Meanwhile, the p-type semiconductor layers 243, 253, and 263 may further include an electron blocking layer formed in a portion adjacent to the active layers 242, 252, and 262. The electron blocking layer may have a structure in which n-type Al _x In _y Ga _{1 -x- y} N of a plurality of different compositions are laminated or one or more layers composed of Al _y Ga _(1-y) N. The electron blocking layer may have a larger bandgap than the active layers 242, 252, and 262, and electrons can be prevented from falling to the p-type semiconductor layers 243, 253, and 263.

The semiconductor light emitting device 200 shown in FIG. 4 may be mounted on the panel substrate in the form of a flip chip. In one pixel P included in the display panel 20, switch elements (TFT _R1- TFT _B2 ) and capacitors (C _R -C _B ) included in each pixel circuit may be provided on a predetermined panel substrate , The semiconductor light emitting device 200 may be disposed on the panel substrate so as to be connected to the switch elements (TFT _R1- TFT _B2 ) and the capacitors (C _R -C _B ) to form the pixels P.

5, a semiconductor light emitting device 300 that may be employed in the display device 10 or the display panel 20 according to an embodiment of the present invention includes a substrate 310, a base layer 320, An insulating film 330 having a plurality of openings, and a plurality of nano-light emitting structures 340, 350, 360, and the like. 5, the substrate 310 is not a substrate for the growth of the base layer 320 but a plurality of nano-light-emitting structures 340, 340 in the manufacturing process. In the embodiment shown in FIGS. 3 and 4, 350, and 360 may be formed. The substrate 310 may comprise silicon.

The base layer 320 may be an n-type semiconductor layer, and may include n-type GaN and n-type impurity Si. The insulating layer 330 provided on the base layer 320 may include a material such as SiO ₂ , SiN, TiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiN, AlN, ZrO ₂ , TiAlN, TiSiN, , And a plurality of openings can be provided. A plurality of nanocores 341, 351, and 361 may be formed from the base layer 320 through a plurality of openings. As described above, the diameter and height of each of the plurality of nanocores 341, 351, and 361, The wavelength of light emitted from each of the first to third light emitting regions 305A, 305B, and 305C may be varied depending on the distance between the nanocores 341, 351, and 361. [

The active layers 342, 352 and 362 and the p-type semiconductor layers 343, 353 and 363 may be sequentially stacked on the nano cores 341, 351 and 361. The active layers 342, 352 and 362 may have a multi quantum well (MQW) or a single quantum well (SQW) structure, for example, a structure in which a GaN layer and an InGaN layer are alternately stacked. The p-type semiconductor layers 343, 353, and 363 may include p-type impurities such as Mg and Zn.

3 and 4, the nano-light emitting structures 340, 350, and 360 included in the first to third light emitting regions 305A, 305B, and 305C can generate light of different colors . The first to third light emitting regions 305A, 305B, and 305C are formed in order to independently emit light of the nano light emitting structures 340, 350, and 360 of the first to third light emitting regions 305A, 305B, and 305C, , 305B, and 305C, a light shielding region 390 may be provided. The light blocking region 390 can separate the p-type semiconductor layers 343, 353, and 363 included in the first to third light emitting regions 305A, 305B, and 305C from each other.

Referring to FIG. 5, transparent conductive layers 370A, 370B, and 370C may be disposed on the p-type semiconductor layers 343, 353, and 363 in the first to third light emitting regions 305A, 305B, and 305C, First to third p-type electrodes 380A, 380B and 380C may be provided on the transparent conductive layers 370A, 370B and 370C. The first to third p-type electrodes 380A, 380B, and 380C are electrically connected to the via electrodes 385A, 385B, and 385C because the substrate 310 is disposed on the first to third p-type electrodes 380A, 380B and 380C. (TFT _R1- TFT _B2 ) and a capacitor (C _R- C _B ) included in the pixel circuit. 5, the first to third p-type electrodes 380A, 380B, and 380C may be directly attached to the panel substrate on which the pixel circuit is formed, and the common n-type electrode 325 may be electrically connected through the conductive wire And may be connected to a reference voltage (V _REF ) line of the panel substrate.

6, a semiconductor light emitting device 400 that may be employed in the display device 10 or the display panel 20 according to an embodiment of the present invention includes a base layer 420, An insulating layer 430, and a plurality of nano-luminescent structures 440, 450, 460, and the like.

5, the first to third p-type electrodes 480A, 480B, and 480C connected to the p-type semiconductor layers 443, 543, and 643 are formed in a semiconductor The common n-type electrode 425 may be formed on the upper surface of the light emitting device 400, and the common n-type electrode 425 may be formed on the lower surface of the semiconductor light emitting device 400. Therefore, when the semiconductor light emitting device 400 is mounted on the panel substrate included in the display panel 20, only the common n-type electrode 425 is connected to the reference voltage (V _REF ) line, The degree of difficulty of the mounting process can be reduced. The first to third p-type electrodes 480A, 480B, and 480C formed on the upper side of the semiconductor light emitting device 400 may be connected to the driving voltage (V _DD ) line of the panel substrate through wires.

6, the first to third p-type electrodes 480A, 480B, and 480C are electrically connected to a p-type isolation insulating layer (not shown) for electrically separating the base layer 420 from the base layer 420. In the semiconductor light emitting device 400, The p-type semiconductor layers 443, 453, and 463 may be formed in the same manner as the common n-type electrode 425 and the base layer 420 are connected to the via metal 423. [ And an n-type isolation insulating layer 421 for electrically separating the transparent conductive layers 470A, 470B, and 470C from each other.

The base layer 420 may comprise an n-type semiconductor material and may be doped with an impurity such as Si. The color of light generated in each of the first to third light emitting regions 405A, 405B, and 405C may vary depending on the diameter, height, or spacing of the nanocores 441, 451, and 461 formed from the base layer 420 . 6, by forming the nanocores 441, 451, and 461 so that the first region 405A has the widest spacing and the third region 405C has the narrowest spacing, Red light, green light, and blue light can be generated in each of the first to third light emitting regions 405A, 405B, and 405C.

The first to third light emitting regions 405A, 405B, and 405C may be separated by the light blocking region 490. [ The light blocking region 490 can electrically isolate the p-type semiconductor layers 443, 453, and 463 included in the first to third light emitting regions 405A, 405B, and 405C from each other. Therefore, the first to third light emitting regions 440A, 480B, and 480C are formed by the plurality of switch elements (TFT _R1- TFT _B2 ) and the capacitors (C _R -C _B ) connected to the first to third p- The light sources 405A, 405B, and 405C can independently generate light of different colors.

7 and 8 are views showing electronic devices to which a display device according to an embodiment of the present invention can be applied.

Referring first to FIG. 7, a display device 510 according to an exemplary embodiment of the present invention may be applied to a mobile device 500 such as a smart phone. The mobile device 500 may include a display device 510, a housing 520, an input unit 530 having buttons and the like, and a voice output unit 540 according to an embodiment of the present invention. The display device 510 may display an image transmitted from a central processing unit (CPU) built in the mobile device 500.

The display device 510 includes a plurality of pixels according to the resolution and each pixel included in the display device 510 may include any one of the semiconductor light emitting devices 100-400 shown in FIGS. have. As described above, the intensities of red light, green light, and blue light generated by one semiconductor light emitting device 100-400 can be independently controlled. Accordingly, unlike the conventional technique in which one pixel includes a plurality of sub-pixels, the display device 510 according to the embodiment of the present invention can have a one-to-one correspondence between the pixel and the semiconductor light emitting device.

For example, when the display device 510 has 1080 pixels horizontally and provides Full-HD image quality having 1920 pixels vertically, in the embodiment of the present invention, a total of 2,073,600 And 2,073,600 semiconductor light emitting devices 100-400 may be included to correspond to one pixel. Accordingly, it is possible to provide a display device 510 that consumes relatively less power than conventional technologies that separately configure red, green, and blue pixels.

As the range of application of the mobile device 500 is expanded and products are diversified, a mobile device 500 capable of providing various functions is widely spread. In the case of a smart phone or a tablet PC, it is possible to provide various functions such as a web browsing function based on a communication function, a game function, an SNS service function, a call function, a document operation function, and a media playback or editing function, Accordingly, efficient use of a limited battery capacity is becoming an important issue in the mobile device 500.

Generally, it is the display device 510 that occupies the largest portion of the battery usage of the mobile device 500. In the case of the liquid crystal display device, the luminous efficiency of the backlight unit is higher than that of the OLED device. Efficiency can have a significant impact on battery usage. The display device 510 according to the embodiment of the present invention does not use a backlight unit unlike the conventional liquid crystal display device and uses a semiconductor light emitting device (LED) having higher light conversion efficiency than the OLED device included in the organic light emitting display device. It is possible to efficiently reduce the amount of battery used when the mobile device 500 is used.

8, a display device 610 according to an exemplary embodiment of the present invention may be applied to the wearable device 600. Referring to FIG. As described above with reference to FIG. 7, the display device 610 including the semiconductor light emitting device 100-400 can efficiently reduce the battery usage, and therefore, the wearable device 600 having a limited battery capacity Can be efficiently applied.

Referring to FIG. 8, the wearable device 600 according to the present embodiment may include a display device 610, a housing 620, and the like. The display device 610 may display image data transmitted from a central processing unit (CPU) incorporated in the wearable device 600 and may correspond to the number of pixels and the number of the semiconductor light emitting devices 100-400 in a one- have. That is, one pixel may include one semiconductor light emitting device 100-400. 3 to 6, one semiconductor light emitting device 100-400 may generate red light, green light, and blue light, and red light, green light, and blue light, respectively, Can be adjusted independently. Therefore, a desired image can be realized even if one pixel does not include a plurality of sub-pixels.

The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

10, 510, 610: display device
20: Display panel
30:
100, 200, 300, 400: semiconductor light emitting element
105A, 205A, 305A, and 405A:
105B, 205B, 305B, and 405B:
105C, 205C, 305C, and 405C:
110, 210 and 310:
120, 220, 320, 420: base layer
125, 225, 325, 425: common n-type electrode
130, 230, 330, and 430:
180A, 280A, 380A, and 480A: a first p-type electrode
180B, 280B, 380B, and 480B: a second p-type electrode
180C, 280C, 380C, and 480C: a third p-type electrode
190, 290, 390, 490: Light blocking area

Claims (10)

A plurality of pixels including a plurality of switch elements, at least one capacitor, and a semiconductor light emitting element; And
A driving circuit for applying a current to the semiconductor light emitting device through the plurality of switching elements and the at least one capacitor; Lt; / RTI >
Wherein each of the plurality of pixels includes the semiconductor light emitting device one by one and the semiconductor light emitting device emits red, green, and blue light by a current applied by the driving circuit.
The method according to claim 1,
Wherein the semiconductor light emitting device includes first to third light emitting regions emitting red, green, and blue light.
3. The method of claim 2,
Wherein the first to third light emitting regions emit red, green, and blue light by a current applied through one common n-type electrode and first through third p-type electrodes, respectively.
The method of claim 3,
Wherein at least one of the one common n-type electrode and the first to third p-type electrodes is mounted on a substrate on which the plurality of switch elements and the at least one capacitor are arranged by a wire.
The method according to claim 1,
Wherein the semiconductor light emitting device is flip-chip bonded on a substrate on which the plurality of switch elements and the at least one capacitor are disposed.
3. The method of claim 2,
The semiconductor light emitting device includes a plurality of nanocores including an n-type semiconductor, an active layer sequentially formed on the nanocore, and a p-type semiconductor layer.
The method according to claim 6,
Wherein the spacing between the plurality of nanocores in each of the first to third light emitting regions is different.
3. The method of claim 2,
Wherein the semiconductor light emitting element includes a light shielding region disposed at a boundary between the first to third regions.
1. A display panel having a plurality of pixels,
Wherein each of the plurality of pixels comprises:
A pixel circuit having a plurality of switch elements and at least one capacitor; And
One semiconductor light emitting element emitting red, green, and blue light; .
1. A display panel having a plurality of pixels,
Wherein each of the plurality of pixels comprises:
One semiconductor light emitting element including first to third light emitting regions emitting light of different colors by a current applied through a common n-type electrode and first to third p-type electrodes; And
First to third pixel circuits connected to the first to third p-type electrodes for applying a current to the first to third light emitting regions; .

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