KR20130139113A - Semiconductor light emitting device and method for manufacturing the same - Google Patents

Abstract

The present invention relates to a semiconductor light emitting device, comprising: a plurality of light emitting parts which are formed to be spaced apart from each other in a rod shape, and in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially formed; And a filling layer formed of a conductive organic material and covering the second conductive semiconductor layer and filling the light emitting portions. And a control unit.

Description

Semiconductor light emitting device and method of manufacturing the same {SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME}

The present invention relates to a semiconductor light emitting device and a manufacturing method thereof.

A light emitting diode (LED) is known as a next generation light source having advantages such as long lifetime, low power consumption, quick response speed and environment friendliness compared to a conventional light source and is an important light source in various products such as a backlight of a lighting device and a display device It is attracting attention. In particular, Group III nitride-based LEDs such as GaN, AlGaN, InGaN, InAlGaN play an important role as semiconductor light emitting devices that output blue or ultraviolet light.

Recently, as the application range of LED is expanded, it is expanding to the light source field of high current / high power field. As the LED is required in the high current / high output field, studies have been made in the art to improve the luminescence characteristics and efforts have been made to improve the growth conditions of the multi quantum well (MQW) structure or the crystallinity of the semiconductor layer . In particular, nanorod-based light emitting devices including nitride semiconductor nanorod structures and fabrication techniques thereof have been proposed to increase light efficiency by improving crystallinity and increasing light emitting regions. The light emitting device based on the nitride semiconductor nanorods can realize light emission using an InGaN / GaN multi-quantum well structure as an active layer.

One object of the present invention is to provide a semiconductor light emitting device having improved current spreading and current injection efficiency by using a conductive organic material as a filling material filling a plurality of light emitting parts.

Another object of the present invention is to provide a semiconductor light emitting device capable of lowering the contact resistance of an electrode and thereby lowering an operating voltage by using a conductive organic material as a filling material filling a plurality of light emitting parts.

In addition, another object of the present invention is to fill the filling material until the top of the plurality of light emitting portion of the rod structure is flattened to prevent the phenomenon that the nanorod breaks during the process.

According to an aspect of the present invention,

A plurality of light emitting parts spaced apart from each other in a rod form and sequentially formed with a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; And a filling layer formed of a conductive organic material and covering the second conductive semiconductor layer and filling the light emitting portions. It provides a semiconductor light emitting device comprising a.

The conductive organic material may be any one selected from the group consisting of PEDOT: PSS, TPDSI ₂ : TFB, PCDTBT, PBTTT, P3HT, and PCBM.

The filling layer may be filled to planarize top surfaces of the plurality of light emitting parts.

A reflective electrode is further formed between the second conductive semiconductor layer and the filling layer to surround the light emitting part.

The reflective electrode is formed by including any one material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt and Au.

The plurality of light emitting parts may be formed on a substrate.

Another aspect of the invention,

Board; A first conductivity type semiconductor layer formed on the substrate; An insulating film pattern formed on the first conductive semiconductor layer to expose a portion of the first conductive semiconductor layer; A plurality of light emitting parts including a first conductive semiconductor layer core formed to extend from the exposed first conductive semiconductor layer, an active layer surrounding the core, and a second conductive semiconductor layer surrounding the active layer; And a filling layer formed of a conductive organic material and covering the second conductive semiconductor layer and filling the light emitting portions. It provides a semiconductor light emitting device comprising a.

The conductive organic material may be any one selected from the group consisting of PEDOT: PSS, TPDSI ₂ : TFB, PCDTBT, PBTTT, P3HT, and PCBM.

The insulating film pattern is made of silicon oxide or silicon nitride.

The filling layer may be filled to planarize top surfaces of the plurality of light emitting parts.

The insulating layer is further formed between the insulating layer pattern and the filling layer positioned between the plurality of light emitting parts.

A reflective electrode is further formed between the second conductive semiconductor layer, the insulating layer pattern, and the filling layer to surround the light emitting part.

The reflective electrode is formed by including any one material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt and Au.

According to another aspect of the present invention,

Forming a first conductive type semiconductor layer on a substrate; Forming an insulating film on the first conductive semiconductor layer, and patterning the insulating film to expose a portion of the first conductive semiconductor layer; After the first conductive semiconductor layer core is grown from the exposed first conductive semiconductor layer, an active layer is formed to surround the first conductive semiconductor layer core, and a second conductive semiconductor layer is formed to surround the active layer. Forming a plurality of light emitting parts including the first conductive semiconductor layer core, the active layer, and the second conductive semiconductor layer; And forming a filling layer made of a conductive organic material and covering the second conductivity type semiconductor layer and filling the plurality of light emitting parts.

The conductive organic material may be any one selected from the group consisting of PEDOT: PSS, TPDSI ₂ : TFB, PCDTBT, PBTTT, P3HT, and PCBM.

The insulating film pattern is formed of silicon oxide or silicon nitride.

The filling layer is characterized in that the top surface of the plurality of light emitting parts.

The insulating layer may be further formed between the insulating layer pattern and the filling layer positioned between the plurality of light emitting parts.

A reflective electrode may be further formed between the second conductive semiconductor layer, the insulating layer pattern, and the filling layer to surround the light emitting part.

The reflective electrode is formed by including any one material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt and Au.

And removing the substrate after the forming of the plurality of light emitting parts.

The filling layer is formed using a spin coating method or a spray coating method.

As described above, according to the present invention, a semiconductor light emitting device having improved current spreading and current injection efficiency can be obtained by using a conductive organic material as a filling material filling a plurality of light emitting parts.

In addition, by using a conductive organic material as a filling material filling a plurality of light emitting parts, a semiconductor light emitting device capable of lowering contact resistance of an electrode and thereby lowering an operating voltage can be obtained.

In addition, the filling material may be filled until the top of the plurality of light emitting parts of the rod structure becomes flat, thereby preventing the nanorod from being broken during the process. Accordingly, the reliability of the semiconductor light emitting device can be improved.

1 is a cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
2 and 3 are cross-sectional views of a semiconductor light emitting device according to another embodiment of the present invention.
4A to 4G are cross-sectional views illustrating a process of manufacturing a light emitting device according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.

Referring to FIG. 1, a semiconductor light emitting device 100 according to an embodiment may include a substrate 10, a first conductive semiconductor layer 30, an insulating film pattern 40, a first conductive semiconductor layer core 50, The active layer 60, the second conductive semiconductor layer 70, the insulating layer 42, the filling layer 80, and the first and second electrodes 90 and 92 are included.

The substrate 10 may be a substrate made of a material such as sapphire, SiC, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN, or the like. In this case, the sapphire is a hexagonal-rhombo-symmetric crystal having lattice constants of 13.001 Å and 4.758 Å in the c-axis and the a-axis directions, respectively, and the C (0001) plane, the A (1120) R (1102) plane, and the like. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth. The substrate 10 is prepared to grow the buffer layer 20 or the first conductivity type semiconductor layer 30.

A buffer layer 20 may be formed on the substrate 10. The buffer layer is formed to solve the lattice mismatch between the substrate and the first conductivity type semiconductor layer. The buffer layer 20 may be formed at a low temperature without doping, and the buffer layer 20 may be omitted.

The first conductivity type semiconductor layer 30 is formed on the substrate 10. The first conductivity type semiconductor layer 30 may be a III-V group compound. The first conductivity type semiconductor layer 30 may be GaN. The first conductivity type semiconductor layer 30 may be n-doped. Here, n-doping means doping with a Group V element. The first conductivity type semiconductor layer 30 may be n-GaN. Electrons are moved to the active layer through the first conductive semiconductor layer 30.

An insulating film is formed on the first conductive semiconductor layer 30. An insulating layer pattern 40 is formed to pattern a portion of the insulating layer to expose a portion of the first conductive semiconductor layer 30. The insulating layer pattern 40 may be formed of silicon oxide or silicon nitride. The structure of the nanorods may be defined by the insulating layer pattern 40. That is, the cross section of the nanorods may vary according to the insulating layer pattern 40.

Next, a light emitting unit having a nanorod structure including the first conductive semiconductor layer core 50, the active layer 60, and the second conductive semiconductor layer 70 may be formed, and the plurality of light emitting units may be formed. have. Hereinafter, the first conductive semiconductor layer core 50, the active layer 60, and the second conductive semiconductor layer 70 included in the plurality of light emitting units will be described.

A first conductive semiconductor layer core 50 extending from the exposed first conductive semiconductor layer 30 is formed. The first conductivity type semiconductor layer core 50 is formed by growing GaN. The cross-sectional shape of the first conductive semiconductor layer core 50 may be circular or polygonal. That is, the cross-sectional shape of the first conductive semiconductor layer core 50 may vary depending on the insulating film pattern 40.

In addition, the diameters of the first conductive semiconductor layer core 50 may be different from each other. The diameter range of the first conductivity-type semiconductor layer core 50 may be 150 to 700 nm, preferably 500 nm or less. The composition of In entering the active layer may vary according to the diameter of the first conductivity type semiconductor layer core 50. In the case where In has a different composition, light of different wavelengths is emitted. As the content of In increases, the bandgap decreases, and thus the emission wavelength is long. That is, the higher the In content, the longer the wavelength is emitted.

An active layer 60 is formed to surround the first conductive semiconductor layer core 50. The active layer 60 may surround the top and side surfaces of the first conductive semiconductor layer core 50.

The active layer 60 may be formed of a single material such as InGaN, but may have a multi-quantum well (MQW) structure in which a quantum barrier layer and a quantum well layer are alternately disposed, for example, GaN and InGaN. Can be made.

In the active layer 60, electrons and holes are combined to generate light energy.

The second conductivity type semiconductor layer 70 is formed to surround the active layer 60. The second conductivity type semiconductor layer 70 may surround the top and side surfaces of the active layer 60.

The second conductivity-type semiconductor layer 70 may be a III-V group compound. The second conductivity type semiconductor layer 70 may be p-doped. Here, p-doping means doping with group III elements. Also, the second conductivity type semiconductor layer may be doped with Mg impurity. The second conductive semiconductor layer may be GaN. The second conductivity type semiconductor layer 70 may be p-GaN. Holes are transferred to the active layer 60 through the second conductive semiconductor layer 70.

An insulating layer 42 is formed on a portion of the sidewall of the second conductive semiconductor layer 70 and the insulating layer pattern 40. The insulating layer 42 may be made of silicon oxide or silicon nitride. The insulating layer 42 insulates the first conductive semiconductor layer 30 from the filling layer 80 made of a conductive organic material. Therefore, the leakage current is reduced by the insulating layer 42.

The filling layer 80 is formed to fill an upper portion of the insulating layer 42 between the plurality of light emitting portions, including the second conductive semiconductor layer 70.

Here, the filling layer 80 is formed of a conductive organic material. Such conductive organic materials have attracted much attention in recent years as applications in semiconductor light emitting devices because they exhibit high electrical conductivity and transparency. In addition, the conductive organic material has good fluidity and may well fill a plurality of light emitting parts.

The conductive organic material is PEDOT: PSS [poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate)], TPDSI ₂ : TFB [(N, N'-diphenyl-N, N'-bis (ptrichlorosilylpropylphenyl) -4,4 ' -diamine) :( poly (9,9-dioctylfluorenyl-2,7-diyl) -co- (4,4 '(N- (4-secbutylphenyl)) diphenylamine))], PCDTBT (poly [N-9 "- heptadecanyl-2,7-carbazolealt-5,5- (4 ', 7'-di-2-thienyl-2', 1 ', 3'-benzothiadiazole)]), PBTTT [poly 2,5-bis (3- tetradecylthiophen-2-yl) thieno [3,2-b] thiophene], P3HT (poly (3-hexylthiophene), PCBM (C60) ([6,6] -phenyl-C61-butyric acid methyl ester) or PCBM (C70 ([6,6] -phenyl-C71-butyric acid methyl ester), etc. Preferably, the conductive organic material may be PEDOT: PSS [poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate)].

The filling layer 80 using the conductive organic material is formed by using a spin coating method or a spray coating method, and thus the filling between the plurality of light emitting parts is effectively performed. In addition, the filling layer 80 is filled up to the upper portion of the second conductive semiconductor layer 70 formed on the nanorods, and the top surface of the plurality of light emitting parts is flattened by the filling layer 80. As such, the filling layer 80 may be filled until the top surfaces of the plurality of light emitting parts are flattened, thereby preventing the light emitting part of the nanorod structure from being broken during the subsequent process.

Since the filling layer 80 has high electrical conductivity, it is possible to smoothly supply current to the light emitting units having the nanorod structures spaced apart from each other. In addition, a plurality of second conductivity-type semiconductor layers formed in the light emitting portion may be connected to each other to exhibit a uniform current distribution. In addition, by using the conductive organic material as the filling layer 80, it is possible to lower the contact resistance of the electrode, thereby lowering the operating voltage.

In one embodiment according to the present invention, no insulating film such as SOG is used. By such a configuration, the SOG process can be eliminated, thereby simplifying the device fabrication process, thereby reducing the cost.

In the light emitting device according to the embodiment, the P-type electrode 90 is formed on the filling layer 80, and the N-type electrode 92 is formed on the first conductive semiconductor layer 30. Holes are supplied through the P-type electrode 90, and electrons are supplied through the N-type electrode 92. The holes and electrons thus supplied generate light energy by bonding in the active layer.

2 and 3 are cross-sectional views of a semiconductor light emitting device according to another embodiment of the present invention. Hereinafter, the description of the same configuration as the embodiment shown in FIG. 1 will be omitted, and only the changed configuration will be described.

Referring to FIG. 2, the semiconductor light emitting device 200 according to another exemplary embodiment of the present invention may include a light transmissive substrate 110, a first conductive semiconductor layer 130, an insulating layer pattern 140, and a first conductive semiconductor layer core. 150, an active layer 160, a second conductive semiconductor layer 170, an insulating layer 142, a reflective electrode 172, a filling layer 180, and first and second electrodes 190 and 192. do. The same is true except for the semiconductor light emitting element and the reflective electrode 172 shown in FIG.

The reflective electrode 172 may be formed to surround the plurality of light emitting parts on the second conductive semiconductor layer 170 and the insulating layer 142. Here, the reflective electrode 172 is made of a light reflective material in addition to the function of forming an electrical ohmic with the second conductivity type semiconductor layer 170, so that the light emitting device 200 is emitted from the active layer 160 when the light emitting device 200 is mounted in a flip chip structure. The light may be guided in the direction in which the light transmissive substrate 110 is disposed or in an upward direction. In consideration of this function, the reflective electrode 172 may include a material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or the like.

As shown in FIG. 3, the semiconductor light emitting device 200 may be fixed on the submount using a solder bump 300 or the like.

In addition, the light transmissive substrate 110 may be removed after the light emitting structure is formed.

When the semiconductor light emitting device is formed as described above, semiconductor light emission is performed by the reflective electrode 172 formed on the entire surface of the plurality of light emitting parts and the filling layer 180 formed entirely on the reflective electrode 172 and formed of a conductive organic material. Heat generated in the device can be effectively released to the submount, so that the reliability of the semiconductor light emitting device can be improved.

4A to 4G are cross-sectional views illustrating a process of manufacturing a light emitting device according to an embodiment of the present invention.

Referring to FIG. 4A, first, a substrate 10 is prepared. As the substrate 10, a substrate made of a material such as sapphire, SiC, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN, or the like may be used. In this case, the sapphire is a hexagonal-rhombo-symmetric crystal having lattice constants of 13.001 Å and 4.758 Å in the c-axis and the a-axis directions, respectively, and the C (0001) plane, the A (1120) R (1102) plane, and the like. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth. However, it is not limited thereto.

The buffer layer 20 is formed on the substrate 10 to eliminate lattice mismatch. The buffer layer 20 may be employed as an undoped semiconductor layer made of nitride, or the like, to mitigate lattice defects of the light emitting structure grown thereon. The buffer layer 20 may be formed using a metal organic chemical vapor deposition (MOCVD) method. However, the buffer layer 200 may not be formed.

Next, a first conductivity type semiconductor layer 30 is formed on the buffer layer 20, and the first conductivity type semiconductor layer 30 is formed of an n-doped n-GaN layer. The first conductive semiconductor layer 30 may also be formed using a MOCVD, MBE, HVPE process, or the like known in the art.

Referring to FIG. 4B, an insulating film is formed on the first conductive semiconductor layer 30. The insulating layer may be formed of silicon oxide or silicon nitride. Such an insulating film may be formed by a method such as sputtering or CVD.

The insulating layer pattern 40 is formed to expose a portion of the first conductive semiconductor layer 30 by patterning the insulating layer through a photolithography process. The gaps between the insulating layer patterns 40 may be formed differently.

Referring to FIG. 4C, GaN is grown from the exposed top surface of the first conductive semiconductor layer 30 to form a first conductive semiconductor layer core 50. The first conductivity type semiconductor layer core 50 may be grown in a direction perpendicular to the substrate 10. The first conductivity type semiconductor layer core 50 may be grown by MOCVD, but is not limited thereto. The first conductive semiconductor layer core 50 may have a shape of a circle or a polygon according to the insulating layer pattern 40, and may have a diameter of 150 to 700 nm.

Referring to FIG. 4D, the active layer 60 and the second conductive semiconductor layer 70 are formed on the top and side surfaces of the first conductive semiconductor layer core 50.

The active layer 60 may be formed of a single material such as InGaN, but may have a multi-quantum well (MQW) structure in which a quantum barrier layer and a quantum well layer are alternately disposed, for example, GaN and InGaN. Can be made.

The active layer 60 and the second conductive semiconductor layer 70 may be deposited three-dimensionally in the vertical and horizontal directions.

Referring to FIG. 4E, an insulating layer 42 is formed on the insulating film pattern 40 of the semiconductor light emitting device in which the second conductive semiconductor layer 70 is formed. The insulating layer 42 may insulate the first conductive semiconductor layer 30 and the filling layer 80 made of a conductive organic material to be formed later. Therefore, the leakage current is reduced by the insulating layer 42.

In view of such a function, the insulating layer 42 may be any material as long as it has an electrical insulating property, but it is preferable to absorb light to a minimum, and thus, for example, silicon oxide such as SiO ₂ , SiO x N y, SixNy, silicon Nitride will be available. In addition, the insulating layer 42 may be formed using a suitable deposition process, for example, a MOCVD process.

Referring to FIG. 4F, the filling layer 80 is formed to fill the gap between the plurality of light emitting parts on the insulating layer 42 including the second conductive semiconductor layer 70. The filling layer 80 is formed of a conductive organic material. The conductive organic material is PEDOT: PSS [poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate)], TPDSI ₂ : TFB [(N, N'-diphenyl-N, N'-bis (ptrichlorosilylpropylphenyl) -4,4 ' -diamine) :( poly (9,9-dioctylfluorenyl-2,7-diyl) -co- (4,4 '(N- (4-secbutylphenyl)) diphenylamine))], PCDTBT (poly [N-9 ″- heptadecanyl-2,7-carbazolealt-5,5- (4 ', 7'-di-2-thienyl-2', 1 ', 3'-benzothiadiazole)]), PBTTT [poly 2,5-bis (3- tetradecylthiophen-2-yl) thieno [3,2-b] thiophene], P3HT (poly (3-hexylthiophene), PCBM (C60) ([6,6] -phenyl-C61-butyric acid methyl ester) or PCBM (C70 ([6,6] -phenyl-C71-butyric acid methyl ester), etc. Preferably, the conductive organic material may be PEDOT: PSS [poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate)].

The filling layer 80 is formed using a spin coating method or a spray coating method.

Top surfaces of the plurality of light emitting parts are flattened by the filling layer 80.

The filling layer 80 may smoothly supply current to the light emitting units having nanorod structures spaced apart from each other. In addition, a plurality of second conductivity-type semiconductor layers formed in the light emitting portion may be connected to each other to exhibit a uniform current distribution.

Therefore, in one embodiment according to the present invention, an insulating film such as SOG is not used. By such a configuration, the SOG process can be eliminated, thereby simplifying the device fabrication process, thereby reducing the cost.

Referring to FIG. 4G, a P-type electrode 90 is formed on the second conductive semiconductor layer 70 and an N-type electrode 92 is formed on the first conductive semiconductor layer 30. .

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

100, 200: semiconductor light emitting element
10, 110: substrate
20, 120: buffer layer
30 and 130: first conductive semiconductor layer
40, 140: insulating film pattern
42, 142: insulation layer
50, 150: first conductive semiconductor layer core
60, 160: active layer
70, 170: second conductivity type semiconductor layer
80, 180: filling layer
90, 190: P-type electrode
92, 192: N-type electrode

Claims (22)

A plurality of light emitting parts spaced apart from each other in a rod form and sequentially formed with a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; And
A filling layer formed of a conductive organic material and covering the second conductive semiconductor layer and filling the light emitting parts; The semiconductor light emitting device comprising:
The method of claim 1,
The conductive organic material is any one selected from the group consisting of PEDOT: PSS, TPDSI ₂ : TFB, PCDTBT, PBTTT, P3HT, PCBM.
The method of claim 1,
The filling layer is a semiconductor light emitting device, characterized in that the filling so as to planarize the top surface of the plurality of light emitting portion.
The method of claim 1,
And a reflective electrode is further formed between the second conductive semiconductor layer and the filling layer to surround the light emitting part.
5. The method of claim 4,
The reflective electrode is a semiconductor light emitting device comprising any one selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt and Au
The method of claim 1,
The plurality of light emitting parts is a semiconductor light emitting device, characterized in that formed on the substrate
Board;
A first conductivity type semiconductor layer formed on the substrate;
An insulating film pattern formed on the first conductive semiconductor layer to expose a portion of the first conductive semiconductor layer;
A plurality of light emitting parts including a first conductive semiconductor layer core formed to extend from the exposed first conductive semiconductor layer, an active layer surrounding the core, and a second conductive semiconductor layer surrounding the active layer; And
A filling layer formed of a conductive organic material and covering the second conductive semiconductor layer and filling the light emitting parts; The semiconductor light emitting device comprising:
The method of claim 7, wherein
The conductive organic material is any one selected from the group consisting of PEDOT: PSS, TPDSI ₂ : TFB, PCDTBT, PBTTT, P3HT, PCBM.
The method of claim 7, wherein
The insulating film pattern is a semiconductor light emitting device, characterized in that made of silicon oxide or silicon nitride.
The method of claim 7, wherein
The filling layer is a semiconductor light emitting device, characterized in that the filling so as to planarize the top surface of the plurality of light emitting portion.
The method of claim 7, wherein
And an insulating layer is further formed between the insulating layer pattern and the filling layer positioned between the plurality of light emitting parts.
The method of claim 7, wherein
And a reflective electrode is further formed between the second conductive semiconductor layer and the insulating layer pattern and the filling layer to surround the light emitting part.
The method of claim 12,
The reflective electrode is a semiconductor light emitting device comprising any one selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt and Au
Forming a first conductivity type semiconductor layer on the substrate;
Forming an insulating film on the first conductive semiconductor layer, and patterning the insulating film to expose a portion of the first conductive semiconductor layer;
After the first conductive semiconductor layer core is grown from the exposed first conductive semiconductor layer, an active layer is formed to surround the first conductive semiconductor layer core, and a second conductive semiconductor layer is formed to surround the active layer. Forming a plurality of light emitting parts including the first conductive semiconductor layer core, the active layer, and the second conductive semiconductor layer; And
Forming a filling layer made of a conductive organic material and covering the second conductive semiconductor layer and filling the plurality of light emitting parts.
15. The method of claim 14,
The conductive organic material is a semiconductor light emitting device manufacturing method, characterized in that any one selected from the group consisting of PEDOT: PSS, TPDSI ₂ : TFB, PCDTBT, PBTTT, P3HT, PCBM.
15. The method of claim 14,
The insulating film pattern is a semiconductor light emitting device manufacturing method, characterized in that formed of silicon oxide or silicon nitride.
15. The method of claim 14,
The filling layer is a semiconductor light emitting device manufacturing method, characterized in that for flattening the upper surface of the plurality of light emitting portion.
15. The method of claim 14,
And forming an insulating layer between the insulating layer pattern and the filling layer positioned between the plurality of light emitting parts.
15. The method of claim 14,
And forming a reflective electrode between the second conductive semiconductor layer, the insulating layer pattern, and the filling layer to surround the light emitting part.
20. The method of claim 19,
The reflective electrode is a semiconductor light emitting device manufacturing method comprising a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt and Au.
20. The method of claim 19,
And removing the substrate after the forming of the plurality of light emitting parts.
15. The method of claim 14,
The filling layer is a semiconductor light emitting device manufacturing method, characterized in that formed by using a spin coating method or a spray coating method.

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