KR20130136963A - Electric contact material - Google Patents
Electric contact material Download PDFInfo
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- KR20130136963A KR20130136963A KR1020137003235A KR20137003235A KR20130136963A KR 20130136963 A KR20130136963 A KR 20130136963A KR 1020137003235 A KR1020137003235 A KR 1020137003235A KR 20137003235 A KR20137003235 A KR 20137003235A KR 20130136963 A KR20130136963 A KR 20130136963A
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- 239000000463 material Substances 0.000 title claims abstract description 29
- 239000011247 coating layer Substances 0.000 claims abstract description 66
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001923 silver oxide Inorganic materials 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 20
- 238000000576 coating method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000007750 plasma spraying Methods 0.000 description 9
- 238000003466 welding Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000005507 spraying Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000001506 calcium phosphate Substances 0.000 description 1
- 229960004106 citric acid Drugs 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- 229940078499 tricalcium phosphate Drugs 0.000 description 1
- 229910000391 tricalcium phosphate Inorganic materials 0.000 description 1
- 235000019731 tricalcium phosphate Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/04—Co-operating contacts of different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/08—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on tungsten carbide
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
- H01H1/023—Composite material having a noble metal as the basic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
- H01H1/023—Composite material having a noble metal as the basic material
- H01H1/0237—Composite material having a noble metal as the basic material and containing oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
- H01H11/04—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C2204/00—End product comprising different layers, coatings or parts of cermet
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Abstract
은-산화물계 전기접점 재료는 전기적 개폐를 반복하는 것에 의해 접점표층에 산화물이 퇴적되고, 그것이 요인이 되어 접점표면에서의 접촉저항을 높여 온도상승을 일으킨다고 하는 문제가 있다. 은-산화물계 전기접점 재료의 접점면에 1∼99mass%Ag-W, 1∼99mass%Ag-WC, W 혹은 WC 중 1종 이상을 1층 이상의 코팅층으로 형성한 것을 특징으로 한다.The silver-oxide type electrical contact material has a problem that oxides are deposited on the contact surface layer by repeating electrical opening and closing, which causes the temperature increase by increasing the contact resistance on the contact surface. At least one of 1 to 99 mass% Ag-W, 1 to 99 mass% Ag-WC, W, or WC is formed on the contact surface of the silver-oxide type electrical contact material as one or more coating layers.
Description
본 발명은 마그넷 스위치, 브레이커, 릴레이 등의 전자개폐기에 사용되는 전기접점 재료에 관한 것이다.The present invention relates to an electrical contact material for use in electronic switchgear, such as magnet switches, breakers, relays.
종래의 은-산화물계 전기접점 재료는 내용착성, 내소모성, 온도특성의 향상을 위해 내부산화조건의 변경이나 제3 원소, 제4 원소의 첨가에 의해 그 때마다 성능적인 과제를 극복해 왔다. 예를 들어 Ag 중에 Sn, In, Sb, Bi 등을 첨가하여 내부산화 처리를 한 재료가 있다 (예를 들어 특허문헌 1 참조).Conventional silver-oxide type electrical contact materials have overcome performance problems at any time by changing internal oxidation conditions or adding third and fourth elements in order to improve welding resistance, wear resistance, and temperature characteristics. For example, there is a material in which internal oxidation treatment is performed by adding Sn, In, Sb, Bi, or the like to Ag (see
또한, mass(질량)%로 Sn: 4∼11%, In: 1∼5%, Te: 0.05∼3%, Cd: 0.05∼3%를 함유하고, 또한 필요에 따라 Fe, Ni, Co 중 1종 이상: 0.01∼1%를 함유하며, 나머지가 Ag와 불가피불순물로 이루어지는 조직을 가지는 Ag 합금을 내부산화 처리한 것이 제안되어 있다(예를 들어 특허문헌 2 참조).In addition, it contains Sn: 4 to 11%, In: 1 to 5%, Te: 0.05 to 3%, Cd: 0.05 to 3% by mass (mass)%, and, if necessary, 1 of Fe, Ni, and Co. Species or more: It is proposed to internally oxidize the Ag alloy which contains 0.01 to 1% and has a structure composed of Ag and an unavoidable impurity (see
그러나 상기한 종래의 기술에서는 은-산화물계 전기접점 재료는 전기적 개폐를 반복하는 것에 의해 접점표층에 산화물이 퇴적되고, 그것이 요인이 되어 접점표면에서의 접촉저항을 높여 온도상승을 일으킨다고 하는 문제가 있다.However, in the above-described conventional technique, the silver-oxide-based electrical contact material has a problem that oxides are deposited on the contact surface layer by repeating electrical switching, which causes the temperature rise by increasing the contact resistance on the contact surface. have.
이 온도상승의 문제를 해결하기 위해서는 첨가하는 산화물량을 감소시키는 방법이 있지만, 첨가하는 산화물의 양을 감소시키면 내용착성, 내소모성이 낮아지게 된다고 하는 문제가 있다.In order to solve this problem of temperature rise, there is a method of reducing the amount of oxide to be added. However, if the amount of oxide to be added is reduced, there is a problem in that welding resistance and wear resistance become low.
안정된 접촉저항을 얻고 게다가 우수한 온도특성의 실현과 내용착성, 내소모성의 향상을 도모하는 것은 상반되게 되어 접점재료의 선택시에 자주 문제가 되고 있다.Obtaining a stable contact resistance and further improving the realization of excellent temperature characteristics, welding resistance, and wear resistance have become contrary, which is frequently a problem when selecting a contact material.
본 발명은 이러한 문제를 해결하는 것을 과제로 한다.It is an object of the present invention to solve such a problem.
그래서 본 발명은 은-산화물계 전기접점 재료의 접점면에 1∼99mass%Ag-W, 1∼99mass%Ag-WC, WC 혹은 W 중 1종 이상으로 두께가 0.1㎛∼1000㎛인 코팅을 함으로써 접점의 저항값을 낮춰 비정상적인 온도상승을 없애고, 또한 내용착성, 내소모성의 대폭적인 향상을 도모하여, 고부하용 전기접점 재료에 사용한 경우에도 수명이 긴 접점으로 할 수 있었다.Thus, the present invention is applied to the contact surface of the silver-oxide type electrical contact material by coating at least one of 1 ~ 99mass% Ag-W, 1 ~ 99mass% Ag-WC, WC or W with a thickness of 0.1㎛ ~ 1000㎛ The resistance value of the contact was lowered to eliminate abnormal temperature rise, and the welding resistance and the wear resistance were greatly improved, and even when used for a high load electrical contact material, the contact could have a long service life.
예로서 도 18에 91.7Ag-5.5SnO2-2.5In2O3-0.3NiO의 접점재료에 W를 코팅한 접점의 조직사진을 나타낸다.As an example, FIG. 18 shows a structure photograph of a contact coated with W on a contact material of 91.7Ag-5.5SnO 2 -2.5In 2 O 3 -0.3NiO.
그리고 전기접점 재료와 1∼99mass %Ag-W, 1∼99mas s%Ag-WC, WC 혹은 W의 코팅층 사이에 Pt, Au, Ag, Ni, Cu 중 적어도 1종의 코팅을 함으로써 접점의 저항값을 낮출 수 있어 비정상적인 온도상승을 방지하는 효과가 있으며 게다가 내용착성, 내소모성의 대폭적인 향상을 도모하여, 고부하용 전기접점 재료에 사용한 경우에도 수명이 긴 접점으로 할 수 있다.And electrical contact material and 1 ~ 99mass % Ag-W, 1-99mas By coating at least one of Pt, Au, Ag, Ni and Cu between s% Ag-WC, WC or W coating layers, the resistance value of the contact can be lowered, thereby preventing abnormal temperature rise and welding resistance A significant improvement in the wear resistance can be achieved, and a long service life can be obtained even when used for a high load electrical contact material.
또한, 코팅방법은 플라즈마 용사, 가스 용사, 고속프레임 용사 등의 용사를 이용한 코팅, 도 1 및 도 2에 나타내는 바와 같은 기중 또는 액중에서의 단속적인 방전, 펄스 등의 방전에 의한 코팅 및 PVD, CVD 등의 증착법 등에 의한다.Further, the coating method is a coating using a spray such as plasma spray, gas spray, high-speed frame spray, intermittent discharge in air or liquid as shown in FIGS. 1 and 2, coating by discharge such as pulse, PVD, CVD By evaporation methods such as the like.
상기에서 코팅층 1층의 두께를 0.1㎛∼1000㎛의 범위로 한 이유는 1층의 두께가 0.1㎛ 미만이면 코팅의 효과가 없기 때문이다. 또한, 1층의 두께가 1000㎛를 초과하면 기술 및 생산비용 면에서 코팅하기가 어렵기 때문이다.The reason why the thickness of one layer of the coating layer is in the range of 0.1 μm to 1000 μm is that when the thickness of one layer is less than 0.1 μm, there is no effect of coating. In addition, if the thickness of one layer exceeds 1000㎛ it is difficult to coat in terms of technology and production cost.
그리고, 1∼99mass %Ag-W, 1∼99mass%Ag-WC에서, Ag 성분이 1mass% 미만 및 99mass%를 초과하면 Ag 합금의 의미가 없어진다.And 1 to 99 mass In% Ag-W, 1-99 mass% Ag-WC, if the Ag component is less than 1 mass% and exceeds 99 mass%, the Ag alloy becomes meaningless.
이와 같이 한 본 발명은 은-산화물계 전기접점 재료에 상기 구성의 코팅을 함으로써 접점의 저항값을 낮추고 내용착성, 내소모성이 향상되어 장수명화가 가능해진다.In the present invention, the coating of the above-described structure on the silver-oxide-based electrical contact material lowers the resistance value of the contact point, and improves the welding resistance and the wear resistance, thereby making it possible to extend the service life.
또한, 전기접점 재료와 코팅층 사이에 Pt, Au, Ag, Ni, Cu 중 적어도 1종을 코팅함으로써 접점의 저항값을 더 낮출 수 있어 비정상적인 온도상승을 방지하며 내용착성, 내소모성이 대폭 향상되어 고부하용 전기접점 재료에 사용한 경우에도 장수명화가 가능해진다.In addition, by coating at least one of Pt, Au, Ag, Ni, and Cu between the electrical contact material and the coating layer, the resistance value of the contact can be further lowered, thereby preventing abnormal temperature rise and greatly improving the welding resistance and wear resistance. Long life can be achieved even when used for a welding electrical contact material.
도 1은 기중 방전에 의한 코팅의 개략설명도
도 2는 액중 방전에 의한 코팅의 개략설명도
도 3은 1층 코팅의 개략설명도
도 4는 부분적 코팅의 개략설명도
도 5는 실시예 9의 개략설명도
도 6은 실시예 10의 개략설명도
도 7은 실시예 11의 개략설명도
도 8은 실시예 12의 개략설명도
도 9는 실시예 13의 개략설명도
도 10은 실시예 14의 개략설명도
도 11은 실시예 15의 개략설명도
도 12는 실시예 16의 개략설명도
도 13은 실시예 17의 개략설명도
도 14는 실시예 18의 개략설명도
도 15는 실시예 19의 개략설명도
도 16은 실시예 20의 개략설명도
도 17은 실시예 21의 개략설명도
도 18은 코팅한 접점의 단면조직사진1 is a schematic diagram of a coating by air discharge
2 is a schematic illustration of a coating by submerged discharge
3 is a schematic illustration of a one layer coating
4 is a schematic illustration of a partial coating
5 is a schematic diagram of Embodiment 9
6 is a schematic explanatory diagram of a tenth embodiment;
7 is a schematic diagram of Embodiment 11
8 is a schematic explanatory diagram of a twelfth embodiment;
9 is a schematic explanatory diagram of a thirteenth embodiment;
10 is a schematic explanatory diagram of a fourteenth embodiment
11 is a schematic diagram of Embodiment 15
12 is a schematic illustration of a sixteenth embodiment
13 is a schematic explanatory diagram of a seventeenth embodiment
14 is a schematic illustration of an eighteenth embodiment
15 is a schematic illustration of Example 19
16 is a schematic illustration of Example 20
17 is a schematic illustration of Example 21
18 is a cross-sectional photograph of a coated contact
이하 도면을 참조하여 본 발명에 의한 실시예를 설명한다.Hereinafter, embodiments of the present invention will be described with reference to the drawings.
먼저 판두께 1.2mm이고 한 변이 3.5mm인 정사각형 치수로 산소분압 0.5MPa, 내부산화온도 700℃에서 48시간 내부산화시킨 91.7mass%Ag-5.5mass%Sn-2.5mass%In-0.3mass%Ni로 이루어지는 접점재료를 제작한다.First, the plate thickness was 1.2mm and 3.5mm on one side.It was 91.7mass% Ag-5.5mass% Sn-2.5mass% In-0.3mass% Ni, which was internally oxidized for 48 hours at an oxygen partial pressure of 0.5MPa and internal oxidation temperature of 700 ℃. A contact material is produced.
실시예Example 1 One
상기 접점재료에 1mass%Ag-W의 코팅을 기중 방전(도 1 참조)에 의해 실시하여 800㎛의 층두께로 형성했다.1 mass% Ag-W was coated on the contact material by air discharge (see FIG. 1) to form a layer thickness of 800 μm.
기중 방전의 조건은 양극에 1mass%Ag-W, 음극에 91.7mass%Ag-5.5mass%Sn-2.5mass%In-0.3mass%Ni로 이루어지는 접점재료를 접속하고, 대기 중에서 전류 1∼3A, 전압 60V, 방전거리 1mm, 300∼400Hz로 진동시켜 단속적으로 방전시키는 것에 의해 도 3에 나타내는 바와 같이 코팅층(4)을 형성했다.The air discharge condition is connected to a contact material consisting of 1 mass% Ag-W at the anode and 91.7 mass% Ag-5.5 mass% Sn-2.5 mass% In-0.3 mass% Ni, and the current is 1 to 3 A and the voltage in the atmosphere. The
그리고 도 1에 있어서 부호 1은 전극, 부호 2는 접점이다.In Fig. 1,
또한, 상기에서는 기중 방전을 이용했지만 액중 방전이어도 되고, 도 2에 나타내는 바와 같이 인산삼칼슘 용액이나 5% 시트르산 수용액 등의 일반적인 전해액(3) 속에 접점(2)을 넣고 전극(1)과의 사이에서 방전한다.In addition, although air discharge was used in the above, discharge in liquid may be sufficient, and as shown in FIG. 2, the
실시예Example 2 2
상기 접점재료에 1mass%Ag-WC의 코팅을 기중 방전(도 1 참조)에 의해 행하여 100㎛의 층두께로 형성했다.1 mass% Ag-WC was coated on the contact material by air discharge (see FIG. 1) to form a layer thickness of 100 μm.
기중 방전의 조건은 양극에 1mass%Ag-WC, 음극에 91.7mass%Ag-5.5mass%Sn-2.5mass%In-0.3mass%Ni의 접점재료를 접속하고, 대기 중에서 전류 1∼3A, 전압 60V, 방전거리 1mm, 300∼400Hz로 진동시켜 단속적으로 방전시키는 것에 의해 도 4에 나타내는 바와 같이 부분적 코팅층(4)을 형성했다.The air discharge condition is 1mass% Ag-WC at the anode and 91.7mass% Ag-5.5mass% Sn-2.5mass% In-0.3mass% Ni to connect the contact material, current 1 ~ 3A in the air, voltage 60V As shown in FIG. 4, the
실시예Example 3 3
상기 접점재료 표면에 블라스트 처리를 한 후 플라즈마제트 용사에 의해 코팅을 했다.The surface of the contact material was blasted and then coated by plasma jet spraying.
상기 플라즈마제트 용사의 조건은 플라즈마제트 분위기 중에 입도 5∼125㎛의 Ag분말과 W분말을 50：1이 되도록 혼입하고 대기 중에서 제트전류 500∼800A, 용사거리 100mm, 플라즈마 가스로는 아르곤을 사용(유량 30ℓ/min)하여 용사 건을 300mm/sec에서 왕복이동시켜 코팅층(4)의 두께를 0.1㎛, 코팅층(4)의 조성을 50mass%Ag-W로 하여 코팅층을 형성했다.In the plasma jet spraying conditions, Ag powder having a particle size of 5 to 125 µm and W powder were mixed in a plasma jet atmosphere to be 50: 1, and jet current of 500 to 800 A, a spraying distance of 100 mm, and argon were used as the plasma gas (flow rate). 30 l / min), and the spray gun was reciprocated at 300 mm / sec to form a coating layer having a thickness of the
실시예Example 4 4
상기 실시예 3과 동일한 플라즈마 용사에 의해 코팅층(4)의 두께 20㎛, 코팅층(4)의 조성을 50mass%Ag-WC로 하여 코팅층(4)을 형성했다.By the same plasma spraying as in Example 3, the
실시예Example 5 5
상기 실시예 3과 동일한 플라즈마 용사에 의해 코팅층(4)의 두께 500㎛, 코팅층(4)의 조성을 99mass%Ag-W로 하여 코팅층(4)을 형성했다.By the same plasma spraying as in Example 3, the
실시예Example 6 6
상기 실시예 3과 동일한 플라즈마 용사에 의해 코팅층(4)의 두께 1000㎛, 코팅층(4)의 조성을 99mass%Ag-WC로 하여 코팅층(4)을 형성했다.By the same plasma spraying as in Example 3, the
실시예Example 7 7
상기 실시예 3과 동일한 플라즈마 용사에 의해 코팅층(4)의 두께 300㎛, 코팅층(4)의 조성을 W로 하여 코팅층(4)을 형성했다.The
실시예Example 8 8
상기 실시예 3과 동일한 플라즈마 용사에 의해 코팅층(4)의 두께 600㎛, 코팅층(4)의 조성을 WC로 하여 코팅층(4)을 형성했다.By the same plasma spraying as in Example 3, the
실시예Example 9 9
상기 실시예 3과 동일한 플라즈마 용사에 의해 코팅층 1층의 두께를 50㎛로 하고, 코팅층의 조성을 도 5에 나타내는 바와 같이 밑에서부터 1mass%Ag-W와 1mass%Ag-WC로 하여 교대로 8층의 코팅층(4)을 형성했다.By the same plasma spraying as in Example 3, the thickness of one coating layer was 50 μm, and the composition of the coating layer was alternately made of 1 mass% Ag-W and 1 mass% Ag-WC from the bottom, as shown in Fig. 5. The
실시예Example 10 10
상기 실시예 3과 동일한 플라즈마 용사에 의해 코팅층 1층의 두께를 50㎛로 하고, 코팅층의 조성을 도 6에 나타내는 바와 같이 밑에서부터 50mass%Ag-W와 50mass%Ag-WC로 하여 교대로 6층의 코팅층(4)을 형성했다.By the same plasma spraying as in Example 3, the thickness of one coating layer was 50 µm, and the composition of the coating layer was alternately set to 50 mass% Ag-W and 50 mass% Ag-WC from the bottom, as shown in FIG. The
실시예Example 11 11
상기 실시예 3과 동일한 플라즈마 용사에 의해 코팅층 1층의 두께를 50㎛로 하고, 코팅층의 조성을 도 7에 나타내는 바와 같이 밑에서부터 99mass%Ag-W와 99mass%Ag-WC로 하여 교대로 4층의 코팅층(4)을 형성했다.By the same plasma spraying as in Example 3, the thickness of one coating layer was 50 µm, and the composition of the coating layer was alternately set to 99 mass% Ag-W and 99 mass% Ag-WC as shown in FIG. 7. The
실시예Example 12 12
상기 실시예 3과 동일한 플라즈마 용사에 의해 코팅층 1층의 두께를 50㎛로 하고, 코팅층의 조성을 도 8에 나타내는 바와 같이 밑에서부터 W와 WC로 하여 2층의 코팅층(4)을 형성했다.By the same plasma spraying as in Example 3, the thickness of one coating layer was set to 50 µm, and the coating layer was formed from two layers of W and WC as shown in FIG.
실시예Example 13 13
판두께 1.2mm이고 한 변이 3.5mm인 정사각형 치수로 산소분압 0.5MPa, 내부산화온도 700℃에서 48시간 내부산화시킨 91.7mass%Ag-5.5mass%Sn-2.5mass%In-0.3mass%Ni로 이루어지는 접점재료의 표면에 블라스트 처리를 한 후, 플라즈마제트 용사에 의해 코팅층을 형성했다.It is composed of 91.7mass% Ag-5.5mass% Sn-2.5mass% In-0.3mass% Ni which was internally oxidized for 48 hours at an oxygen partial pressure of 0.5MPa and internal oxidation temperature of 700mm with a plate size of 1.2mm and 3.5mm on one side. After blasting the surface of the contact material, a coating layer was formed by plasma jet spraying.
플라즈마제트 용사의 조건은 상기 실시예 3과 동일한 조건으로 행하고, 플라즈마제트 분위기 중에 입도 5∼125㎛의 Ag분말과 W분말을 99：1이 되도록 혼입하고 서서히 W분말을 증량시켜 단계적으로 조성을 변화시키고, 코팅층 1층의 두께를 100㎛로 하여 코팅층의 조성을 도 9에 나타내는 바와 같이 밑에서부터 99mass%Ag-W, 75massAg-W, 50mass%Ag-W, 25mass%Ag-W, 1mass%Ag-W로 하여 코팅층(4)을 형성했다.Plasma jet spraying conditions were carried out under the same conditions as in Example 3, and the Ag powder and the W powder having a particle size of 5 to 125 µm were mixed in a plasma jet atmosphere to be 99: 1, and the W powder was gradually increased to change the composition step by step. The thickness of one coating layer was 100 μm, and the composition of the coating layer was 99 mass% Ag-W, 75 massAg-W, 50 mass% Ag-W, 25 mass% Ag-W, and 1 mass% Ag-W as shown in FIG. To form a coating layer (4).
실시예Example 14 14
실시예 13과 동일하게 하여 코팅층 1층의 두께를 100㎛로 하고, 코팅층의 조성을 도 10에 나타내는 바와 같이 밑에서부터 99mass%Ag-WC, 75mass%Ag-WC, 50mass%Ag-WC, 25mass%Ag-WC, 1mass%Ag-WC로 하여 코팅층(4)을 형성했다.In the same manner as in Example 13, the thickness of one coating layer was 100 μm, and the composition of the coating layer was 99mass% Ag-WC, 75mass% Ag-WC, 50mass% Ag-WC, 25mass% Ag from the bottom as shown in FIG. The
실시예Example 15 15
판두께 1.2mm이고 한 변이 3.5mm인 정사각형 치수로 산소분압 0.5MPa, 내부산화온도 700℃에서 48 시간 내부산화시킨 91.7mass%Ag-5.5mass%Sn-2.5mass%In-0.3mass%Ni로 이루어지는 접점재료의 표면에 블라스트 처리를 한 후, 플라즈마제트 용사에 의해 코팅층을 형성했다.Square plate with 1.2mm plate thickness and 3.5mm one side After blasting the surface of the contact material, a coating layer was formed by plasma jet spraying.
플라즈마제트 용사의 조건은 상기 실시예 3과 동일한 조건으로 행하고, 코팅층 1층의 두께를 50㎛, 코팅층의 조성을 도 11에 나타내는 바와 같이 밑에서부터 1mass%Ag-W와 Au로 하여 교대로 5층의 코팅층(4)을 형성했다.Plasma jet spraying conditions were carried out under the same conditions as in Example 3, and the thickness of one coating layer was 50 µm, and the composition of the coating layer was 1 mass% Ag-W and Au from the bottom, as shown in FIG. In turn, five
실시예Example 16 16
상기 실시예 15와 동일하게 하여 코팅층 1층의 두께를 40㎛, 코팅층의 조성을 도 12에 나타내는 바와 같이 밑에서부터 1mass%Ag-W와 Au 및 Pt로 하여 교대로 7층의 코팅층(4)을 형성했다.In the same manner as in Example 15, the thickness of one coating layer was 40 μm and the composition of the coating layer was alternately formed with 1 mass% Ag-W, Au, and Pt from the bottom, thereby forming seven
실시예Example 17 17
상기 실시예 15와 동일하게 하여 코팅층 1층의 두께를 50㎛, 코팅층의 조성을 도 13에 나타내는 바와 같이 밑에서부터 50mass%Ag-W와 Au로 하여 교대로 5층의 코팅층(4)을 형성했다.In the same manner as in Example 15, five layers of
실시예Example 18 18
상기 실시예 15와 동일하게 하여 코팅층 1층의 두께를 40㎛, 코팅층의 조성을 도 14에 나타내는 바와 같이 밑에서부터 50mass%Ag-W와 Au 및 Pt로 하여 교대로 7층의 코팅층(4)을 형성했다.In the same manner as in Example 15, the thickness of one coating layer was 40 μm, and the composition of the coating layer was alternately formed with 50 mass% Ag-W, Au, and Pt from the bottom, thereby forming seven
실시예Example 19 19
상기 실시예 15와 동일하게 하여 코팅층 1층의 두께를 20㎛, 코팅층의 조성을 도 15에 나타내는 바와 같이 밑에서부터 99mass%Ag-W와 Au로 하여 교대로 9층의 코팅층(4)을 형성했다.In the same manner as in Example 15, nine
실시예Example 20 20
상기 실시예 15와 동일하게 하여 코팅층 1층의 두께를 20㎛, 코팅층의 조성을 도 16에 나타내는 바와 같이 밑에서부터 99mass%Ag-WC와 Au 및 Pt로 하여 교대로 10층의 코팅층(4)을 형성했다.In the same manner as in Example 15, the thickness of one coating layer was 20 μm, and the composition of the coating layer was alternately formed with 99 mass% Ag-WC, Au and Pt from the bottom to form 10 coating layers 4. did.
실시예Example 21 21
상기 실시예 15와 동일하게 하여 코팅층 1층의 두께를 10㎛, 코팅층의 조성을 도 17에 나타내는 바와 같이 밑에서부터 99mass%Ag-WC와 Ni, Ag 및 Cu로 하여 교대로 9층의 코팅층(4)을 형성했다.In the same manner as in Example 15, the thickness of one coating layer was 10 μm, and the composition of the coating layer was alternately set to 99 mass% Ag-WC, Ni, Ag, and Cu as shown in FIG. 17. Formed.
비교예Comparative Example 1 One
판두께 1.2mm이고 한 변이 3.5mm인 정사각형 치수로 산소분압 0.5MPa, 내부산화온도 700℃에서 48시간 내부산화시킨 91.7mass%Ag-5.5mass%Sn-2.5mass%In-0.3mass%Ni로 이루어지는 접점을 제작했다.It is composed of 91.7mass% Ag-5.5mass% Sn-2.5mass% In-0.3mass% Ni which was internally oxidized for 48 hours at an oxygen partial pressure of 0.5MPa and internal oxidation temperature of 700mm with a plate size of 1.2mm and 3.5mm on one side. I made contact.
비교예Comparative Example 2 2
판두께 1.2mm이고 한 변이 3.5mm인 정사각형 치수로 산소분압 0.5MPa, 내부산화온도 700℃에서 48시간 내부산화시킨 92.3mass%Ag-5mass%Sn-2.5mass%In-0.2mass%Ni로 이루어지는 접점을 제작했다.The contact is composed of 92.3mass% Ag-5mass% Sn-2.5mass% In-0.2mass% Ni, which is internally internalized for 48 hours at an oxygen partial pressure of 0.5MPa and internal oxidation temperature of 700mm with a plate size of 1.2mm and 3.5mm on one side. Made.
비교예Comparative Example 3 3
판두께 1.2mm이고 한 변이 3.5mm인 정사각형 치수로 산소분압 0.5MPa, 내부산화온도 700℃에서 48시간 내부산화시킨 91.9mass%Ag-7mass%Sn-1mass%In-0.1mass%Ni로 이루어지는 접점을 제작했다.The contact is made of 91.9mass% Ag-7mass% Sn-1mass% In-0.1mass% Ni, which is internally oxidized for 48 hours at an oxygen partial pressure of 0.5MPa and internal oxidation temperature of 700. Made.
상기 각 실시예 및 비교예에 대해 접점시험을 했다. 접점시험은 접촉저항의 측정과 용착시험(60A정격용) 및 시판중인 접촉기에 의한 소모량 측정(AC200V 20A)을 하여 전기특성을 평가했다.Contact test was done about each said Example and the comparative example. In the contact test, electrical characteristics were evaluated by measuring contact resistance, welding test (for 60A rating), and consumption measurement by a commercially available contactor (AC200V 20A).
[표 1][Table 1]
1: 전극 2: 접점
3: 전해액 4: 코팅층1: electrode 2: contact
3: electrolyte solution 4: coating layer
Claims (4)
코팅층 1층의 두께를 0.1㎛∼1000㎛로 한 것을 특징으로 하는 전기접점 재료.The method of claim 1,
The electrical contact material characterized by setting the thickness of one coating layer to 0.1 micrometer-1000 micrometers.
1∼99mass%Ag-W 혹은 1∼99mass%Ag-WC에서 Ag 양을 단계적으로 변화시킨 복수층의 코팅층을 형성한 것을 특징으로 하는 전기접점 재료.The method of claim 1,
An electrical contact material comprising forming a coating layer of a plurality of layers in which the Ag amount is changed in steps from 1 to 99 mass% Ag-W or 1 to 99 mass% Ag-WC.
1∼99mass%Ag-W 혹은 1∼99mass%Ag-WC의 코팅층 사이에 Pt, Au, Ag, Ni, Cu 중 적어도 1종의 코팅층을 형성한 것을 특징으로 하는 전기접점 재료.The method of claim 1,
An electrical contact material comprising at least one coating layer of Pt, Au, Ag, Ni, and Cu formed between 1 to 99 mass% Ag-W or 1 to 99 mass% Ag-WC.
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| KR20180086781A (en) * | 2017-01-23 | 2018-08-01 | 현대자동차주식회사 | Electrical contact material |
| WO2019117365A1 (en) * | 2017-12-13 | 2019-06-20 | 엘티메탈 주식회사 | Method for producing electrical contact material using thermal spraying method, and electrical contact material produced thereby |
| KR102013824B1 (en) * | 2018-03-13 | 2019-08-23 | 재단법인 포항산업과학연구원 | Electrical contact and manufacturing method of the same |
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| KR20160078348A (en) * | 2013-10-29 | 2016-07-04 | 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 | High contrast grating optoelectronics |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6214570Y2 (en) * | 1980-01-16 | 1987-04-14 | ||
| JPS5810319A (en) * | 1981-07-13 | 1983-01-20 | 株式会社東芝 | Composite sintered contact |
| JP2518458B2 (en) * | 1990-07-27 | 1996-07-24 | 三菱電機株式会社 | Circuit breaker |
| JP2777120B2 (en) * | 1997-05-01 | 1998-07-16 | 株式会社徳力本店 | Ag-oxide-based material and method for producing the same |
| JP5128153B2 (en) * | 2006-03-17 | 2013-01-23 | 古河電気工業株式会社 | Electrical contact material and manufacturing method thereof |
-
2011
- 2011-07-26 TW TW100126295A patent/TW201229254A/en unknown
- 2011-07-27 JP JP2012526536A patent/JP5684809B2/en not_active Expired - Fee Related
- 2011-07-27 WO PCT/JP2011/067155 patent/WO2012014949A1/en not_active Ceased
- 2011-07-27 CN CN201180036903XA patent/CN103109338A/en active Pending
- 2011-07-27 KR KR1020137003235A patent/KR20130136963A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180086781A (en) * | 2017-01-23 | 2018-08-01 | 현대자동차주식회사 | Electrical contact material |
| WO2019117365A1 (en) * | 2017-12-13 | 2019-06-20 | 엘티메탈 주식회사 | Method for producing electrical contact material using thermal spraying method, and electrical contact material produced thereby |
| KR102013824B1 (en) * | 2018-03-13 | 2019-08-23 | 재단법인 포항산업과학연구원 | Electrical contact and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201229254A (en) | 2012-07-16 |
| CN103109338A (en) | 2013-05-15 |
| JP5684809B2 (en) | 2015-03-18 |
| JPWO2012014949A1 (en) | 2013-09-12 |
| WO2012014949A1 (en) | 2012-02-02 |
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| PA0105 | International application |
Patent event date: 20130207 Patent event code: PA01051R01D Comment text: International Patent Application |
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