KR20120034619A - Film for semiconductor device and semiconductor device - Google Patents

Abstract

When the adhesive film with a dicing sheet laminated | stacked the adhesive film on the dicing film wound up the roll-shaped film for semiconductor devices laminated | stacked on the cover film at predetermined intervals, it suppresses generation | occurrence | production of a transfer mark in an adhesive film. It is possible to provide a film for a semiconductor device. The film for semiconductor devices of this invention is a film for semiconductor devices in which the adhesive film with a dicing sheet which the adhesive film was laminated | stacked on the dicing film was laminated | stacked on the cover film at predetermined intervals, The thickness of a cover film is Ta, It is the film for semiconductor devices in which Ta / Tb exists in the range of 0.07-2.5, when the thickness of a fresh film is made into Tb.

Description

Film and semiconductor device for semiconductor device {FILM FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE}

The present invention relates to a semiconductor device film and a semiconductor device manufactured using the film for semiconductor device.

BACKGROUND ART Conventionally, silver paste is used for fixing a semiconductor chip to a lead frame or an electrode member in the manufacturing process of a semiconductor device. Such a fixing process is performed by apply | coating a paste adhesive on the die pad of a lead frame, etc., mounting a semiconductor chip there, and hardening a paste adhesive layer.

However, paste-like adhesives generate large deviations in coating amount, coating shape, and the like due to the viscosity behavior and deterioration. As a result, since the paste adhesive thickness to be formed becomes nonuniform, the reliability of the adhesion strength with respect to a semiconductor chip is lacking. That is, when the coating amount of the paste adhesive is insufficient, the bonding strength between the semiconductor chip and the electrode member is lowered, and the semiconductor chip is peeled off in the subsequent wire bonding step. On the other hand, if the coating amount of the pasty adhesive is too large, the pasty adhesive flows out onto the semiconductor chip, resulting in poor characteristics, resulting in lower yield and reliability. The problem in such a fixing process becomes particularly remarkable with the enlargement of a semiconductor chip. Therefore, it is necessary to control the application amount of the paste adhesive frequently, which causes trouble in workability and productivity.

In the application | coating process of this paste adhesive, there exists a method of apply | coating a paste adhesive separately to a lead frame or a forming chip. However, in this method, it is difficult to homogenize the paste adhesive layer, and a special device or a long time is required for the application of the paste adhesive. For this reason, the dicing film and the adhesive film with a dicing sheet which provide the adhesive bond layer for chip | tip fixation required for a mounting process while maintaining adhesion of a semiconductor wafer in a dicing process are proposed (for example, refer patent document 1). ).

This adhesive film with a dicing sheet is formed by peeling an adhesive bond layer on a support base material, after dicing a semiconductor wafer under the holding | maintenance by the adhesive bond layer, extending | stretching a support base material, and forming a chip together with an adhesive bond layer It peels and collect | recovers this individually and makes it adhere to adherends, such as a lead frame, through the adhesive bond layer.

Conventionally, the adhesive film with a dicing sheet is produced by bonding together after producing each of a dicing film and an adhesive film separately from the constraint on a manufacturing process. For this reason, from the viewpoint of preventing the loosening, the winding shift, the position shift, the void (bubble), etc. from occurring in the film production process, the production was performed while applying tensile tension to each film during conveyance by a roll. All.

This type of adhesive film with a dicing sheet may be cured if it is placed under an environment of high temperature and high humidity, or stored for a long time under a load. As a result, the fluidity | liquidity of an adhesive bond layer, the fall of the holding force with respect to a semiconductor wafer, and the peelability after dicing are brought about. For this reason, the adhesive film with a dicing sheet is often transported while preserving in refrigeration of -30--10 degreeC, or refrigerated condition of -5-10 degreeC, and this enables the long-term storage of a film characteristic. .

As the adhesive film with a dicing sheet mentioned above, it processes beforehand into the shape (for example, circular shape) of the semiconductor wafer to attach, taking into consideration workability, such as attachment to a semiconductor wafer and installation in a ring frame at the time of dicing. There is a thing which precut processing was performed.

Such an adhesive film with a dicing sheet is manufactured by bonding the adhesive film punched in circular shape to the dicing film with which the adhesive layer was laminated | stacked on the base material, and then punching a dicing film in circular shape corresponding to a ring frame. Thereby, when dicing a semiconductor wafer, a ring frame is attached to the outer peripheral part of a dicing film, and the adhesive film with a dicing sheet can be fixed.

The precut processed adhesive film with a dicing sheet is attached to the long cover film at a predetermined interval, and then wound in a roll shape to be transported or stored as a film for semiconductor device manufacture.

Japanese Patent Laid-Open No. 60-57642

However, in the case of the film for semiconductor devices mentioned above, the thickness of the part in which the adhesive film with a dicing sheet is laminated | stacked becomes thicker than the thickness of the part which is not laminated | stacked. Therefore, especially when the number of windings increases or the tension at the time of winding up becomes high, the edge of the adhesive film with another dicing sheet is pressed by the adhesive film with one dicing sheet, and the winding marks are transferred, and the smoothness of the adhesive film is damaged. There was a case. Such transfer marks are particularly remarkable when the adhesive film is formed of a relatively soft resin, when the thickness of the adhesive film is thick, when the winding number of the film for semiconductor device is large, or the like. Then, when the adhesive film having such transfer marks and having a smoothness defect is attached to the semiconductor wafer, voids (bubbles) are generated between the semiconductor wafer and the adhesive film. Such voids may cause problems during semiconductor wafer processing, and may lower the yield of the semiconductor device to be manufactured.

Therefore, in order to suppress generation | occurrence | production of the said transcription mark, the method of weakening the winding pressure of the film for semiconductor devices is considered. However, in this method, there may be a problem in the case of actual use, such as a winding shift occurs, for example, the setting to the tape mounter becomes difficult.

Moreover, in order to suppress generation | occurrence | production of the said transfer mark, it is thought to provide a buffer base material in the back surface side of an adhesive film. However, there is a problem that residual stress remains between the adhesive film and the buffer substrate, whereby peeling of both occurs at the interface between the adhesive film and the buffer substrate after transportation in the low temperature state and storage for a long time.

This invention is made | formed in view of the above-mentioned subject, The objective is to roll-shaped the film for semiconductor devices laminated | stacked on the cover film by the adhesive film with a dicing sheet in which the adhesive film was laminated | stacked on the dicing film at predetermined intervals. When winding up, it is providing the film for semiconductor devices which can suppress that a transcription mark generate | occur | produces in an adhesive film.

The present inventors examined the film for semiconductor devices in order to solve the said conventional problem. As a result, by controlling the thickness of the cover film and the thickness of the dicing film which comprise the film for semiconductor devices, it discovered that it is possible to suppress generation | occurrence | production of a transcription mark in an adhesive film, and came to complete this invention.

That is, the film for semiconductor devices which concerns on this invention is a film for semiconductor devices in which the adhesive film with a dicing sheet which the adhesive film was laminated | stacked on the dicing film was laminated | stacked on the cover film at predetermined intervals, and the thickness of the said cover film When Ta is set to Tb and the thickness of the dicing film is set to Tb, Ta / Tb is in the range of 0.07 to 2.5.

As for said Ta / Tb, if the thickness Ta of a cover film is made constant, the dither film becomes thick, so that a value is small. According to the said structure, since said Ta / Tb is 0.07 or more, the level | step difference between the part by which the dicing film is laminated | stacked, and the part which is not laminated | stacked is constant. Therefore, the occurrence of transcription marks can be suppressed. Moreover, since said Ta / Tb is 0.07 or more and the thickness of a dicing film is thick compared with a cover film, a stress can be absorbed by the thickness of a cover film, and generation | occurrence | production of a transcription mark can be suppressed. Moreover, since said Ta / Tb is 0.07 or more and the thickness of a dicing film is thick compared with a cover film, at the time of bonding to a semiconductor wafer, the adhesive film with a dicing sheet and a cover film which have a dicing film are peeled suitably. (Picking) In addition, when said Ta / Tb makes thickness Tb of a dicing film constant, for example, the smaller the value, the thinner the thickness of the cover film. Since said Ta / Tb is 2.5 or less, the thickness of a cover film is below fixed. Therefore, the followability to the level | step difference between the part in which the dicing film is laminated | stacked, and the part which is not laminated | stacked is favorable. Moreover, since said Ta / Tb is 2.5 or less and the thickness of a cover film is below fixed, the pressure at the time of laminating | stacking the adhesive film with a dicing sheet to a cover film can be made uniform, and mixing of a bubble can be prevented. have. Thus, according to the said structure, when winding up the film for semiconductor devices in which the adhesive film and the cover film were laminated | stacked on the dicing film in roll shape, it becomes possible to suppress that a transcription mark generate | occur | produces in an adhesive film.

In the said structure, peeling force F1 between the said adhesive film and the said cover film in the T-type peeling test on the conditions of the temperature of 23 +/- 2 degreeC and peeling rate 300mm / min is in the range of 0.025-0.075N / 100mm, Peeling force F2 between an adhesive film and the said dicing film exists in the range of 0.08-10N / 100mm, It is preferable that said F1 and said F2 satisfy | fill the relationship of F1 <F2.

The film for semiconductor devices is manufactured while applying tensile tension to a dicing film, an adhesive film, and a cover film from a viewpoint of preventing generation | occurrence | production of loosening, winding shift, position shift, and voids (bubble). As a result, the film for semiconductor devices is manufactured in the state in which the tensile residual distortion existed in any one of the films which comprise it. This tensile residual distortion causes shrinkage in each film, for example, when frozen at -30 to -10 ° C or transported at a low temperature of -5 to 10 ° C or stored for a long time. In addition, each film also differs in the degree of shrinkage in terms of different physical properties. For example, the dicing film has the largest degree of shrinkage among the films, and the cover film has the smallest degree of shrinkage. As a result, an interfacial peeling arises between a dicing film and an adhesive film, or the film lifting phenomenon of a cover film arises.

The above constitution sets the peel force F1 between the adhesive film and the cover film to be in the range of 0.025 to 0.075 N / 100 mm, and sets the peel force F2 between the adhesive film and the dicing film to be in the range of 0.08 to 10 N / 100 mm, and then F1 < The configuration satisfies the relationship of F2. As described above, the shrinkage in each film is the largest in the dicing film, so that the shrinkage ratio is increased by making the peeling force F2 between the adhesive film and the dicing film larger than the peeling force F1 between the adhesive film and the cover film. It is to suppress the shrinkage of a large dicing film and to prevent the interface peeling between a dicing film and an adhesive film, and the film lifting phenomenon of a cover film. In addition, part or all of the adhesive film can be prevented from being transferred to the cover film.

In the above configuration, the thickness Ta of the cover film is preferably 10 to 100 µm.

In the above configuration, the thickness Tb of the dicing film is preferably 25 to 180 mu m.

In addition, the semiconductor device which concerns on this invention is manufactured using the film for semiconductor devices described above.

FIG. 1A is a plan view showing an outline of a film for semiconductor devices according to the present embodiment, and FIG. 1B is a partial cross-sectional view thereof.
FIG. 2 is a partial cross-sectional view of the semiconductor device film shown in FIGS. 1A and 1B wound in a roll shape. FIG.
3 is a schematic view for explaining the manufacturing process of the film for a semiconductor device.

The film for semiconductor devices which concerns on this embodiment is demonstrated below.

FIG. 1A is a plan view showing an outline of a film for semiconductor devices according to the present embodiment, and FIG. 1B is a partial cross-sectional view thereof. The film 10 for semiconductor devices has the structure by which the adhesive film 1 with a dicing sheet was laminated | stacked on the cover film 2 at predetermined intervals. In the dicing die bond film 1, the adhesive film 12 is laminated | stacked on the dicing film 11, and the dicing film 11 is the adhesive layer 14 laminated | stacked on the base material 13. Structure.

FIG. 2 is a partial cross-sectional view of the semiconductor device film shown in FIGS. 1A and 1B wound in a roll shape. FIG. As shown in FIG. 2, in the film 10 for semiconductor devices wound by roll shape, the step 19 is carried out to the part by which the adhesive film 1 with a dicing sheet is laminated | stacked, and the part 18 which is not laminated | stacked. Is present. In addition, the some adhesive film 1 with a dicing sheet on the cover film 2 is laminated | stacked mutually shifting in the horizontal direction. Therefore, the edge of the adhesive film 1 with another dicing sheet is pressed by the adhesive film 1 with one dicing sheet.

In the film 10 for semiconductor devices, when the thickness of the cover film 2 is made Ta and the thickness of the dicing film 11 is made Tb, Ta / Tb is 0.07-2.5. It is preferable that it is 0.1-2, and, as for said Ta / Tb, it is more preferable that it is 0.3-1.5. As for Ta / Tb, if the thickness Ta of the cover film 22 is made constant, for example, the smaller the value, the thicker the dicing film 11 becomes. According to the film 10 for semiconductor devices, since the said Ta / Tb is 0.07 or more, the part in which the dicing film 11 is laminated, ie, the part in which the adhesive film 1 with a dicing sheet is laminated, is laminated | stacked, The step 19 with the part 18 which is not made is fixed or less. Therefore, it can suppress that a transcription mark generate | occur | produces in the adhesive film 12 which comprises the adhesive film 1 with a dicing sheet. Moreover, since the said Ta / Tb is 0.07 or more and the thickness of the dicing film 11 is thick compared with the cover film 2, a stress can be absorbed by the thickness of the cover film 2, and generation | occurrence | production of a transcription mark is carried out. Can be suppressed. Moreover, since said Ta / Tb is 0.07 or more and the thickness of a dicing film is thick compared with a cover film, at the time of bonding to a semiconductor wafer, the adhesive film with a dicing sheet and a cover film with a dicing film are peeled suitably. (Picking) In addition, when the said Ta / Tb makes thickness Tb of the dicing film 11 constant, the thickness of the cover film 2 becomes thinner, so that a value is small. In addition, since the said Ta / Tb is 2.5 or less, the thickness of the cover film 2 is fixed or less. Therefore, the followability to the level | step difference between the part in which the dicing film 11 is laminated | stacked, and the part which is not laminated | stacked is favorable. Moreover, since said Ta / Tb is 2.5 or less and the thickness of the cover film 2 is below fixed, the pressure at the time of laminating the adhesive film 1 with a dicing sheet to the cover film 2 can be made uniform. And mixing of bubbles can be prevented. Thus, according to the film 10 for semiconductor devices, when winding up in roll shape, it becomes possible to suppress that a transcription mark generate | occur | produces in the adhesive film 12. FIG.

The peeling force F1 between the adhesive film 12 and the cover film 2 is smaller than the peeling force F2 between the adhesive film 12 and the dicing film 11. In the manufacturing process of the semiconductor device film 10, the dicing film 11, the adhesive film 12, and the cover film from the viewpoint of preventing occurrence of loosening, winding shift, position shift, voids (bubbles), and the like, in the manufacturing process thereof. It is produced by laminating while applying tensile tension to (2). Therefore, tensile residual distortion exists in each film. This tensile residual distortion causes shrinkage in each film, for example, when frozen at -30 to -10 ° C or transported or stored for a long time at a low temperature of -5 to 10 ° C. For example, the dicing film has the largest degree of shrinkage, and the cover film has the smallest degree of shrinkage. Here, in the film for semiconductor devices which concerns on this embodiment, by making said peeling force F1 and F2 into a relationship of F1 <F2, the interfacial peeling between films resulting from the difference of shrinkage in each film, and the film lifting of the cover film 2 are carried out. The phenomenon can be prevented. In addition, it is also possible to prevent part or all of the adhesive film 12 from being transferred to the cover film 2.

The peeling force F1 between the adhesive film 12 and the cover film 2 is preferably in the range of 0.025 to 0.075 N / 100 mm, more preferably in the range of 0.03 to 0.06 N / 100 mm, and in the range of 0.035 to 0.05 N / 100 mm. I am particularly preferred. When the peeling force F1 is less than 0.025N / 100mm, for example, when frozen at -30 to -10 ° C or transported at a low temperature of -5 to 10 ° C or stored for a long time, the adhesive film 12 and the cover film ( Each of 2) shrinks at a different shrinkage rate, whereby a film lifting phenomenon of the cover film 2 may occur. Moreover, during conveyance of the film 10 for semiconductor devices, etc., wrinkles, a winding shift | offset | dye, and mixing of a foreign material may be generated. In addition, voids (bubbles) may be generated between the adhesive film 12 and the semiconductor wafer when the semiconductor wafer is mounted. On the other hand, when the peeling force F1 is larger than 0.075N / 100mm, since the adhesiveness of the adhesive film 12 and the cover film 2 is too strong, at the time of peeling of the cover film 2 or its shrinkage, the adhesive film 12 will be removed. The adhesive agent (it mentions later for details) to comprise may be transferred to one part or whole surface. In addition, the value of the said peeling force F1 means the peeling force between the adhesive film 12 and the cover film 2 before thermosetting, when the adhesive film 12 is a thermosetting type.

Moreover, the peeling force F2 between the adhesive film 12 and the dicing film 11 has preferable inside of the range of 0.08-10N / 100mm, More preferable inside of the range of 0.1-6N / 100mm, and 0.15 ~ 0.4N / 100mm Range I is particularly preferred. When the peeling force F2 is 0.08 N / 100 mm or more, the dicing film 11 and the adhesive film, for example, when frozen at -30 to -10 ° C or transported or stored for a long time at a low temperature of -5 to 10 ° C Each of (12) shrinks at a different shrinkage rate, whereby interfacial peeling can be prevented from occurring between the dicing film 11 and the adhesive film 12. Moreover, during conveyance of the film 10 for semiconductor devices, etc., wrinkles, winding shift | offset | difference, mixing of a foreign material, and generation of a void can be prevented. In addition, chip scattering and chipping can be prevented when dicing a semiconductor wafer. On the other hand, when peeling force F2 is 10 N / 100 mm or less, the peelability between the adhesive film 12 and the adhesive layer 14 at the time of pickup of a semiconductor chip will become suitable, and the pickup of a semiconductor chip can be made favorable. In addition, the adhesive (which is mentioned later for details) which comprises the adhesive layer 14 to a semiconductor chip with an adhesive agent can be prevented from fully sticking. In addition, the numerical range of the said peeling force F2 includes the case where the adhesive layer of the dicing film 11 is ultraviolet curing type, and also hardened | cured to some extent by ultraviolet irradiation previously. In addition, the hardening of the adhesive layer by ultraviolet irradiation may be before bonding with the adhesive film 12, and may be after bonding.

Moreover, the peeling force F3 between the cover film 2 and the dicing film 11 (adhesive layer 14) has preferable inside of the range of 0.025-5N / 100mm, More preferable inside of the range of 0.05-1N / 100mm, The inside of the range of 0.1-0.5N / 100mm is especially preferable. When the peeling force F3 is 0.025 N / 100 mm or more, the dicing film 11 and the cover film, for example, when frozen at -30 to -10 ° C or transported or stored for a long time at a low temperature of -5 to 10 ° C Each of (2) shrinks at a different shrinkage rate, whereby the film lifting phenomenon of the cover film 2 can be prevented from occurring. In addition, generation | occurrence | production of a wrinkle, a winding shift | offset | dye, and mixing of a foreign material can be prevented during conveyance of the film 10 for semiconductor devices. On the other hand, since peeling force F3 is 5 N / 100 mm or less, it can suppress that the adhesiveness of the dicing film 11 and the cover film 2 becomes strong, and can prevent it from picking at the process of peeling a cover film. have.

The value of the said peeling force F1-F3 is the measured value in the T-type peeling test (JISK 6854-3) performed on the conditions of the temperature of 23 +/- 2 degreeC, peeling rate 300mm / min, and inter-chuck distance 100mm. In addition, the brand name "autograph AGS-H" (made by Shimadzu Corporation) was used as a tensile tester.

The base material 13 of the dicing film 11 serves as the strength matrix of not only the dicing film 11 but the film 10 for semiconductor devices. As the base material 13, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, etc. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, poly Polyester such as urethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyether ether ketone, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, aramid (paper), glass , Glass fiber, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, Silicone resin, a metal (foil), paper, etc. are mentioned. In addition, when the adhesive layer 14 is an ultraviolet curing type, it is preferable that it has ultraviolet permeability among the things illustrated above as the base material 13.

Moreover, as a material of the base material 13, polymers, such as a crosslinked body of the said resin, are mentioned. The said plastic film may be used by non-stretching, and may use the thing which performed the uniaxial or biaxial stretching process as needed. According to the resin sheet which provided heat shrinkability by an extending | stretching process etc., the contact area of the adhesive layer 14 and the adhesive film 12 is reduced by heat shrinking the base material 13 after dicing, and the recovery of a semiconductor chip is made easy. can do.

The surface of the base material 13 is chemical or physical such as conventional surface treatment, for example, chromic acid treatment, ozone exposure, flame exposure, high pressure electric shock exposure, ionization radiation treatment, etc., in order to increase the adhesiveness and retention of the adjacent layers. Treatment and coating with a primer (for example, an adhesive substance described later) can be performed.

The base material 13 can select suitably the same kind or a different kind, and can use what blended several species as needed. Moreover, in order to provide antistatic ability, the base material 13 can be provided with the vapor deposition layer of the conductive material whose thickness which consists of a metal, an alloy, these oxides, etc. is about 30-500 kPa on the base material 13. The base material 13 may be a single layer or two or more types of multilayers.

10-170 micrometers is preferable in order that the thickness of the base material 13 ensures the conveyance of a film, and also prevents tearing, crushing, and plastic deformation of a base material even when the support base material expands in a bonding process, More Preferably, it is 50-150 micrometers, More preferably, it is 100-130 micrometers.

It does not specifically limit as an adhesive used for formation of the adhesive layer 14, For example, general pressure-sensitive adhesives, such as an acrylic adhesive and a rubber-based adhesive, can be used. As said pressure sensitive adhesive, the acrylic adhesive which uses an acryl-type polymer as a base polymer from a point of cleanliness by the organic solvents, such as ultrapure water of an electronic component sensitive to contamination, such as a semiconductor wafer and glass, and alcohol, is preferable.

As said acryl-type polymer, (meth) acrylic-acid alkylester (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl Ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester , Alkyl groups such as hexadecyl ester, octadecyl ester, and acyl ester, such as linear or branched alkyl esters having 1 to 30 carbon atoms, especially 4 to 18 carbon atoms, and (meth) acrylic acid cycloalkyl esters (for example, Cyclopentyl ester, cyclohexyl ester, and the like) As there may be mentioned acrylic polymers used. In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and all of the (meth) of this invention are synonymous.

The said acryl-type polymer may contain the unit corresponding to the other monomer component copolymerizable with the said (meth) acrylic-acid alkylester or cycloalkylester as needed for the purpose of modification, such as cohesion force and heat resistance. As such a monomer component, For example, Carboxyl group containing monomers, such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, a crotonic acid; Acid anhydride monomers such as maleic anhydride and itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, Hydroxyl group-containing monomers such as (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Sulfonic acid groups such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid Containing monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; Acrylamide, acrylonitrile, etc. are mentioned. These copolymerizable monomer components may be used alone or in combination of two or more. As for the usage-amount of these copolymerizable monomers, 40 weight% or less of all the monomer components is preferable.

In addition, in order to crosslink the said acrylic polymer, a polyfunctional monomer etc. can also be included as a monomer component for copolymerization as needed. As such a polyfunctional monomer, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylic Late, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, Polyester (meth) acrylate, urethane (meth) acrylate, etc. are mentioned. These polyfunctional monomers can also be used by 1 type (s) or 2 or more types. As for the usage-amount of a polyfunctional monomer, 30 weight% or less of all the monomer components is preferable from a viewpoint of adhesive characteristics.

The said acrylic polymer is obtained by superposing | polymerizing a single monomer or 2 or more types of monomer mixtures. The polymerization can be carried out in any manner such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization or the like. It is preferable that the content of the low molecular weight substance is small in terms of preventing contamination to a clean adherend. In this regard, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3 million.

Moreover, in order to raise the number average molecular weights, such as an acryl-type polymer which is a base polymer, you may employ | adopt an external crosslinking agent suitably for the said adhesive. As a specific means of an external crosslinking method, the method of making it react by adding so-called crosslinking agents, such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine type crosslinking agent, is mentioned. In the case of using an external crosslinking agent, the amount of its use is appropriately determined depending on the balance with the base polymer to be crosslinked and also according to the use of the adhesive. Generally, it is preferable to mix | blend about 5 weight part or less and 0.1-5 weight part with respect to 100 weight part of said base polymers. In addition, you may use additives, such as various conventionally well-known tackifiers and antioxidant, other than the said component as needed for an adhesive.

The adhesive layer 14 can be formed with an ultraviolet curable adhesive. The ultraviolet curable pressure-sensitive adhesive can increase the degree of crosslinking by irradiation of ultraviolet rays, thereby easily lowering the adhesive strength thereof, and making only the portion corresponding to the semiconductor wafer attached portion of the pressure-sensitive adhesive layer 14 makes the difference in the adhesive strength with other portions. Can be.

The inside of the range of 1-170 MPa is preferable, and, as for the tensile elasticity modulus at 23 degreeC after ultraviolet-hardening the said adhesive layer 14, the inside of the range which is 5-100 MPa is more preferable. By setting the tensile modulus to 1 MPa or more, good pick-up property can be maintained. On the other hand, by setting the tensile modulus to be 170 MPa or less, generation of chip scattering during dicing can be prevented. In addition, it is preferable that irradiation of the said ultraviolet-ray is performed by the ultraviolet-ray integrated light quantity of 30-1000mJ / cm <2>, for example. By setting the amount of ultraviolet irradiation integrated light to 30 mJ / cm 2 or more, the pressure-sensitive adhesive layer 14 can be cured without being insufficient, and excessive adhesion with the adhesive film 12 can be prevented. As a result, good pickup can be exhibited at the time of pickup of the semiconductor chip. In addition, it is possible to prevent the adhesive of the pressure-sensitive adhesive layer 14 from adhering to the adhesive film 12 after pickup (so-called pull residue). On the other hand, by setting the amount of ultraviolet irradiation accumulated light to be 1000 mJ / cm 2 or less, an extreme decrease in the adhesive force of the pressure-sensitive adhesive layer 14 is prevented, thereby causing peeling between the adhesive films 12 and dropping of the mounted semiconductor wafer. Prevent it. In addition, it is possible to prevent generation of chip scatter of the formed semiconductor chip during dicing of the semiconductor wafer.

The value of the tensile elasticity modulus of the said adhesive layer is based on the following measuring method. That is, the adhesive layer 14 is cut out of a sample having a length of 30.0 mm, a width of 10.0 mm, and a cross-sectional area of 0.1 to 0.5 mm 2. The sample was subjected to a tensile test in the MD direction at a measurement temperature of 23 ° C., a distance between the chucks, 20 mm, and a tensile speed of 50 mm / minute, and the amount of change (mm) thereof as the sample elongated was measured. Thereby, in the obtained SS (Strain-Strength) curve, a tangent line is drawn at the initial start part thereof, the tensile strength when the tangent line corresponds to 100% elongation is divided by the cross-sectional area, and the value obtained is divided by the tensile strength of the pressure-sensitive adhesive layer. It is made elastic modulus.

Here, the adhesive film 12 is a structure formed only in the attachment part according to the shape seen from the plane of a semiconductor wafer. Therefore, by hardening the ultraviolet curable adhesive layer 14 according to the shape of the adhesive film 12, the adhesive force of the part corresponding to a semiconductor wafer adhesion part can be easily reduced. Since the adhesive film 12 adheres to the portion where the adhesive force is lowered, the interface between the portion of the adhesive layer 14 and the adhesive film 12 has a property of being easily peeled off at the time of pickup. On the other hand, the part which does not irradiate an ultraviolet-ray has sufficient adhesive force.

As described above, the portion where the pressure-sensitive adhesive layer 14 is formed of an uncured ultraviolet curable pressure-sensitive adhesive adheres to the adhesive film 12 and can secure a holding force when dicing. Thus, the ultraviolet curable adhesive can support the adhesive film 12 for fixing a chip-shaped semiconductor wafer (semiconductor chip etc.) to adherends, such as a board | substrate, with good balance of adhesion | attachment and peeling. When the adhesive film 12 is laminated only on the attachment portion of the semiconductor wafer, the wafer ring is fixed in the region where the adhesive film 12 is not laminated.

An ultraviolet curable pressure sensitive adhesive has ultraviolet curable functional groups, such as a carbon-carbon double bond, and what shows adhesiveness can be used without a restriction | limiting in particular. As an ultraviolet curable adhesive, the addition type ultraviolet curable adhesive which mix | blended an ultraviolet curable monomer component and an oligomer component with general pressure-sensitive adhesives, such as the said acrylic adhesive and a rubber-based adhesive, can be illustrated, for example.

As an ultraviolet curable monomer component to mix | blend, a urethane oligomer, urethane (meth) acrylate, trimethylol propane tri (meth) acrylate, tetramethylol methane tetra (meth) acrylate, pentaerythritol tri (meth), for example Acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, etc. Can be mentioned. Moreover, various oligomers, such as a urethane type, a polyether type, a polyester type, a polycarbonate type, a polybutadiene type, are mentioned as an ultraviolet curable oligomer component, It is suitable that the molecular weight is the range of about 100-30000. The compounding quantity of an ultraviolet curable monomer component and an oligomer component can determine suitably the quantity which can reduce the adhesive force of an adhesive layer according to the kind of said adhesive layer. Generally, it is 5-500 weight part, Preferably it is about 40-150 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

Moreover, as an ultraviolet curable adhesive, the internal type ultraviolet curable adhesive which used the thing which has a carbon-carbon double bond in a polymer side chain, a main chain, or a main chain terminal as a base polymer other than the addition type ultraviolet curable adhesive mentioned above is mentioned. Since the internal type ultraviolet curable pressure sensitive adhesive does not need to contain an oligomer component or the like which is a low molecular weight component or does not contain much, an oligomer component or the like does not move in the adhesive over time, and thus a pressure sensitive adhesive layer having a stable layer structure It is preferable because it can be formed.

The base polymer having a carbon-carbon double bond can be used without particular limitation as long as it has a carbon-carbon double bond and has adhesiveness. As such a base polymer, what makes an acryl-type polymer a basic skeleton is preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

The method of introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. However, the molecular design is easy to introduce the carbon-carbon double bond into the polymer side chain. For example, after copolymerizing a monomer having a functional group in an acrylic polymer in advance, a compound having a functional group and a carbon-carbon double bond capable of reacting with the functional group is condensed or added while maintaining the ultraviolet curability of the carbon-carbon double bond. A method of making it react is mentioned.

Examples of the combination of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups. Among the combinations of these functional groups, the combination of the hydroxyl group and the isocyanate group is preferable because the reaction can be easily traced. Moreover, as long as it is a combination which produces | generates the acryl-type polymer which has the said carbon-carbon double bond by the combination of these functional groups, a functional group may be any of an acryl-type polymer and the said compound, but in the above-mentioned preferable combination, an acryl-type polymer has a hydroxyl group. It is preferable that the compound has an isocyanate group. In this case, as an isocyanate compound which has a carbon-carbon double bond, methacryloyl isocyanate, 2-methacryloyl oxyethyl isocyanate, m-isopropenyl (alpha), (alpha)-dimethylbenzyl isocyanate, etc. are mentioned, for example. have. As the acrylic polymer, those obtained by copolymerizing the hydroxy group-containing monomers exemplified above, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, and the like are used.

The intrinsic ultraviolet curable pressure sensitive adhesive can be used alone of the base polymer (particularly an acrylic polymer) having the carbon-carbon double bond, but may be blended with the ultraviolet curable monomer component or oligomer component to the extent that the properties are not deteriorated. have. An ultraviolet curable oligomer component etc. exist in the range of 30 weight part with respect to 100 weight part of base polymers normally, Preferably it is the range of 0-10 weight part.

The said ultraviolet curable adhesive contains a photoinitiator, when hardening by ultraviolet rays etc .. As a photoinitiator, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, (alpha)-hydroxy- (alpha), (alpha) '-dimethylacetophenone, 2-methyl- 2-, for example. Α-ketol compounds such as hydroxypropiophenone and 1-hydroxycyclohexylphenyl ketone; Methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinopropane Acetophenone compounds such as -1; Benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; Ketal compounds such as benzyl dimethyl ketal; Aromatic sulfonyl chloride-based compounds such as 2-naphthalenesulfonyl chloride; Optically active oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; Benzophenone compounds such as benzophenone, benzoylbenzoic acid and 3,3'-dimethyl-4-methoxybenzophenone; Thioxanthone, 2-chloro thioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro thioxanthone, 2,4-diethyl thioxide Thioxanthone type compounds, such as a santone and 2, 4- diisopropyl thioxanthone; Camphorquinone; Halogenated ketones; Acylphosphine oxide; Acyl phosphonate etc. are mentioned. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

In the said ultraviolet curable adhesive layer 14, you may make it contain the compound colored by ultraviolet irradiation as needed. By including the compound colored by ultraviolet irradiation in the adhesive layer 14, only the part irradiated with the ultraviolet ray can be colored. Thereby, whether the ultraviolet-ray is irradiated to the adhesive layer 14 can be immediately determined by visual observation, it is easy to recognize a semiconductor wafer adhesion part, and the bonding of a semiconductor wafer is easy. Moreover, when detecting a semiconductor chip by an optical sensor etc., the detection precision becomes high, and a malfunction does not occur at the time of pick-up of a semiconductor chip.

The compound which is colored by ultraviolet irradiation is a compound which is colorless or light color before ultraviolet irradiation but becomes colored by ultraviolet irradiation. Preferred examples of such compounds include leuco dyes. As the leuco dye, conventional triphenylmethane-based, fluorane-based, phenothiazine-based, auramine-based and spiropyran-based ones are preferably used. Specifically 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "- Trisdimethylaminotriphenylmethanol, 4,4 ', 4 "-trisdimethylaminotriphenylmethane, etc. are mentioned.

As a developer used suitably together with these leuco dyes, electron acceptors, such as the initial polymer of phenol formalin resin, aromatic carboxylic acid derivative, and activated clay which are used conventionally, are mentioned, and when changing a hue, Known coloring agents can also be used in combination.

The compound colored by such ultraviolet irradiation may be once contained in an ultraviolet curable adhesive after melt | dissolving in an organic solvent etc., and may be included in the said adhesive as a fine powder shape. The use ratio of this compound is 10 weight% or less in the adhesive layer 14, Preferably it is 0.01 to 10 weight%, It is preferable that it is 0.5 to 5 weight% more preferably. When the ratio of the compound is more than 10% by weight, the ultraviolet ray irradiated to the pressure-sensitive adhesive layer 14 is absorbed excessively by this compound, so that hardening of the portion corresponding to the semiconductor wafer adhesion portion in the pressure-sensitive adhesive layer 14 is insufficient. And adhesive force may not fall enough. On the other hand, in order to fully color, it is preferable to make the ratio of the said compound into 0.01 weight% or more.

In addition, when forming the adhesive layer 14 with an ultraviolet curable adhesive, the thing in which all or one part except the part corresponding to the semiconductor wafer adhesion part of the at least single side | surface of the base material 13 was light-shielded, After the ultraviolet curable pressure sensitive adhesive layer 14 is formed, the ultraviolet ray is irradiated to harden the portion corresponding to the portion attached to the semiconductor wafer, thereby forming the portion having reduced adhesive force. As a light shielding material, what can become a photomask on a support film can be created by printing, vapor deposition, etc. According to such a manufacturing method, the film 10 for semiconductor devices of this invention can be manufactured efficiently.

Moreover, when hardening inhibition by oxygen arises at the time of ultraviolet irradiation, it is preferable to block oxygen (air) from the surface of the ultraviolet curable adhesive layer 14 by arbitrary methods. For example, the method of coating the surface of the said adhesive layer 14 with a separator, the method of irradiating an ultraviolet-ray in nitrogen gas atmosphere, etc. are mentioned.

As for the thickness of the adhesive layer 14, 1-50 micrometers is preferable, More preferably, it is 2-30 micrometers, More preferably, it is 5-25 from the point of compatibility of the chip | tip prevention surface cutoff and the fixing holding of an adhesive film. [Mu] m.

In addition, the sum total of the thickness of the base material 13 and the thickness of the adhesive layer 14, ie, the thickness Tb of the dicing film 11, is a viewpoint of carrying property, the prevention of the notch of a chip | tip cutting surface, the fixing retention of an adhesive film, and the viewpoint of pickup property. 25-180 micrometers is preferable, More preferably, it is 50-150 micrometers, More preferably, it is 100-130 micrometers.

The adhesive film 12 is a layer having an adhesive function, and as the constituent material thereof, a thermoplastic resin and a thermosetting resin may be used in combination, or a thermoplastic resin may be used alone.

The tensile storage modulus at 23 ° C before curing of the adhesive film 12 is preferably within the range of 50 to 5000 MPa, more preferably within the range of 300 to 4000 MPa, and even more preferably within the range of 500 to 3000 MPa. By setting the tensile storage modulus to 50 MPa or more, the adhesive melted to the semiconductor chip by friction with the dicing blades during the dicing of the semiconductor wafer can be prevented from causing pickup failure. On the other hand, by setting the tensile storage modulus to 5000 MPa or less, adhesion to a semiconductor wafer to be mounted, a substrate to be die-bonded, or the like can be improved.

The value of the tensile storage modulus is based on the following measurement method. That is, the solution of an adhesive composition is apply | coated and dried on the release liner which performed the mold release process, and the adhesive film 12 of thickness 100micrometer is formed. The tensile storage elastic modulus in 23 degreeC before the hardening of the adhesive film 12 is measured using this viscoelasticity measuring apparatus (Leometrics make: model: RSA-II). More specifically, the sample size is 30.0 × 5.0 in width × 0.1 mm in thickness, and the measurement sample is set in a film tension measurement jig, and the frequency is 10.0 Hz, the distortion is 0.025%, and the temperature is raised in the temperature range of -30 ° C to 280 ° C. Measure under the condition of the rate 10 ° C / min.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin And polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins and fluorine resins. These thermoplastic resins can be used individually or in combination of 2 or more types. Among these thermoplastic resins, acrylic resins having less ionic impurities and high heat resistance and which can ensure the reliability of semiconductor devices are particularly preferable.

It does not specifically limit as said acrylic resin, The polymer etc. which have 1 or 2 or more types of ester of acrylic acid or methacrylic acid which have a C30 or less, especially a C4-C18 linear or branched alkyl group are mentioned. have. As said alkyl group, a methyl group, an ethyl group, a propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group or dodecyl group Etc. can be mentioned.

Moreover, it does not specifically limit as another monomer which forms the said polymer, For example, it contains carboxyl groups, such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, or crotonic acid. Monomers, acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, (meth) acrylic acid 6 -Hydroxyhexyl, (meth) acrylic acid 8-hydroxyoctyl, (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl or (4-hydroxymethylcyclohexyl) -methylacrylate, etc. Hydroxyl group-containing monomer, styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate A bit or a (meth) sulfonic acid group-containing monomers such as one oxy-naphthalene sulfonic acid with acrylic or 2-hydroxyethyl acrylate may be mentioned phosphoric acid group-containing monomers such as phosphate.

A phenol resin, an amino resin, unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, or a thermosetting polyimide resin etc. are mentioned as said thermosetting resin. These resin can be used individually or in combination of 2 or more types. In particular, epoxy resins containing less ionic impurities or the like that corrode semiconductor chips are preferred. As the curing agent of the epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl Bifunctional epoxy resins, polyfunctional epoxy resins such as type, naphthalene type, fluorene type, phenol novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, or hydantoin type, tris Epoxy resins, such as glycidyl isocyanurate type or glycidyl amine type, are used. These can be used individually or in combination of 2 or more types. Of these epoxy resins, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferable. It is because these epoxy resins are rich in reactivity with the phenol resin as a hardening | curing agent, and are excellent in heat resistance.

Moreover, the said phenol resin acts as a hardening | curing agent of the said epoxy resin, For example, a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, tert- butyl phenol novolak resin, a nonyl phenol novolak resin, etc. Polyoxystyrene, such as a novolak-type phenol resin, a resol-type phenol resin, polyparaoxy styrene, etc. are mentioned. These can be used individually or in combination of 2 or more types. Among these phenol resins, phenol novolak resins and phenol aralkyl resins are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.

It is preferable to mix | blend the compounding ratio of the said epoxy resin and a phenol resin so that the hydroxyl group in a phenol resin per 0.5 equivalent of epoxy groups in the said epoxy resin component may be 0.5-2.0 equivalent. More suitable is 0.8 to 1.2 equivalents. That is, when the compounding ratio of both is out of the said range, sufficient hardening reaction will not advance and it will become easy to deteriorate the characteristic of hardened | cured epoxy resin.

Moreover, in this embodiment, the adhesive film 12 containing an epoxy resin, a phenol resin, and an acrylic resin is especially preferable. Since these resins have little ionic impurities and high heat resistance, the reliability of the semiconductor chip can be ensured. In this case, the blending ratio is 10 to 200 parts by weight based on 100 parts by weight of the acrylic resin component.

In order to crosslink to some extent previously, the adhesive film 12 which concerns on this embodiment may add the polyfunctional compound which reacts with the functional group etc. of the molecular chain terminal of a polymer at the time of preparation, as a crosslinking agent. Thereby, the adhesive characteristic under high temperature is improved and heat resistance is improved.

As said crosslinking agent, a conventionally well-known thing can be employ | adopted. In particular, polyisocyanate compounds, such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5- naphthalene diisocyanate, and the adduct of polyhydric alcohol and diisocyanate, are more preferable. As addition amount of a crosslinking agent, it is preferable to set it as 0.05-7 weight part normally with respect to 100 weight part of said polymers. If the amount of the crosslinking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 part by weight, cohesion force is insufficient, which is not preferable. Moreover, you may make it contain together such polyisocyanate compound and other polyfunctional compounds, such as an epoxy resin, as needed.

Moreover, the inorganic filler can be mix | blended suitably with the adhesive film 12 according to the use. Mixing of an inorganic filler enables provision of conductivity, improvement of thermal conductivity, adjustment of elastic modulus, and the like. Examples of the inorganic filler include ceramics such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead and tin. And various inorganic powders made of metals such as zinc, palladium, solder, alloys, and other carbons. These can be used individually or in combination of 2 or more types. Among them, silica, in particular fused silica, is suitably used. Moreover, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.01-80 micrometers.

It is preferable to set the compounding quantity of the said inorganic filler to 0-80 weight part with respect to 100 weight part of organic components, and it is more preferable to set it to 0-70 weight part.

Moreover, the other additive can be mix | blended suitably with the adhesive film 12 as needed. As another additive, a flame retardant, a silane coupling agent, an ion trap agent, etc. are mentioned, for example. As said flame retardant, antimony trioxide, antimony pentoxide, a brominated epoxy resin etc. are mentioned, for example. These can be used individually or in combination of 2 or more types. As said silane coupling agent, (beta)-(3, 4- epoxycyclohexyl) ethyltrimethoxysilane, (gamma)-glycidoxy propyl trimethoxysilane, (gamma)-glycidoxy propylmethyl diethoxysilane, etc. are mentioned, for example. Can be. These compounds can be used individually or in combination of 2 or more types. As said ion trap agent, hydrotalcites, bismuth hydroxide, etc. are mentioned, for example. These can be used individually or in combination of 2 or more types.

Although the thickness of the adhesive film 12 is not specifically limited, For example, it is about 5-100 micrometers, Preferably it is about 5-70 micrometers.

The film 10 for semiconductor devices can be provided with antistatic ability. Thereby, generation | occurrence | production of the static electricity at the time of the adhesion | attachment and peeling, etc., breakage of a circuit by the charging of semiconductor wafer etc. by this, etc. can be prevented. The provision of the antistatic ability is a method of adding an antistatic agent or a conductive substance to the base material 13, the pressure-sensitive adhesive layer 14, or the adhesive film 12, and the conductive layer made of a charge transfer complex or a metal film to the base material 13. It can carry out by a suitable method, such as laying. As these systems, a system in which impurity ions that are likely to deteriorate the semiconductor wafer is hardly generated. Examples of conductive materials (conductive fillers) blended for the purpose of imparting conductivity, improving thermal conductivity, and the like, include silver, metal oxides such as spherical shapes such as aluminum, gold, copper, nickel, and conductive alloys, needle-shaped, flake-shaped metal powders, and alumina. , Amorphous carbon black, graphite, and the like. However, the said adhesive film 12 is preferable at the point which can prevent an electrically conductive thing from leaking electrically.

The adhesive film 12 is protected by the cover film 2. The cover film 2 has a function as a protective material which protects the adhesive film 12 until it is practically provided. The cover film 2 is peeled off when the semiconductor wafer is attached onto the adhesive film 12 of the adhesive film with a dicing sheet. As the cover film 2, a plastic film, paper, etc. surface-coated with peeling agents, such as polyethylene terephthalate (PET), polyethylene, a polypropylene, a fluorine-type peeling agent and a long-chain alkylacrylate type peeling agent, can also be used.

As for thickness Ta of the cover film 2, 10-100 micrometers is preferable from a viewpoint of workability and conveyability, More preferably, it is 15-75 micrometers, More preferably, it is 25-50 micrometers.

Next, the manufacturing method of the film 10 for semiconductor devices which concerns on this embodiment is demonstrated below.

The manufacturing method of the film 10 for semiconductor devices which concerns on this embodiment forms the adhesive layer 14 on the base material 13, and manufactures the dicing film 11, and adhere | attaches on the base separator 22 Bonding the adhesive layer 14 and the adhesive film 12 of the dicing film 11 to the process of forming the film 12, the process of punching the adhesive film 12 according to the shape of the semiconductor wafer to which it adheres, The adhesive film 1 with a dicing sheet is made by peeling the base material separator 22 on the adhesive film 12, the process of laminating | stacking as a surface, the process of punching the dicing film 11 in the circular shape corresponding to the ring frame, and the like. And a step of bonding the adhesive film 1 with the dicing sheet to the cover film 2 at predetermined intervals.

The manufacturing process of the dicing film 11 is performed as follows, for example. First, the base material 13 can be formed into a film by a conventionally well-known film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like.

Next, after apply | coating an adhesive composition solution on the base material 13 and forming a coating film, the said coating film is dried (preheated crosslinking as needed), and the adhesive layer 14 is formed. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating etc. are mentioned. Moreover, as dry conditions, it can set suitably according to the thickness, material, etc. of a coating film. Specifically, it is performed within the range of a drying temperature of 80-150 degreeC and a drying time of 0.5 to 5 minutes, for example. Moreover, after apply | coating an adhesive composition on the 1st separator 21 and forming a coating film, you may dry the coating film on the said dry conditions, and may form the adhesive layer 14. FIG. Then, the adhesive layer 14 is bonded together with the 1st separator 21 on the base material 13. Thereby, the dicing film 11 in which the adhesive layer 14 was protected by the 1st separator 21 is produced (refer FIG. 3 (a)). The produced dicing film 11 may have a long shape wound in a roll shape. In this case, it is preferable to wind up while applying tensile tension in the longitudinal direction or the width direction so that loosening, winding shift | offset | difference, and position shift | offset | difference do not arise in the dicing film 11. However, by applying tensile tension, the dicing film 11 is wound into a roll shape in a state where tensile residual distortion remains. In addition, although the dicing film 11 may be extended by the said tension tension at the time of winding up of the dicing film 11, winding is not aiming for an extending | stretching operation.

As the adhesive layer 14, when it consists of an ultraviolet curable adhesive and employ | adopts ultraviolet-ray hardening previously, it forms as follows. That is, after apply | coating an ultraviolet curable adhesive composition on the base material 13, and forming a coating film, the said coating film is dried under predetermined conditions (heat crosslinking as needed), and an adhesive layer is formed. A coating method, coating conditions, and drying conditions can be performed similarly to the above. Moreover, after apply | coating an ultraviolet curable adhesive composition on the 1st separator 21 and forming a coating film, you may dry a coating film on the said dry conditions, and may form an adhesive layer. Thereafter, the pressure-sensitive adhesive layer is transferred onto the base material 13. Moreover, an ultraviolet-ray is irradiated to a pressure-sensitive adhesive layer under predetermined conditions. Although it does not specifically limit as irradiation conditions of an ultraviolet-ray, Usually, the inside of the range used as accumulated light quantity 50-800mJ / cm <2> is preferable, and the inside of the range which becomes 100-500mJ / cm <2> is more preferable. By adjusting the accumulated light amount within the above numerical range, the peel force F2 between the adhesive film 12 and the dicing film 11 can be controlled within the range of 0.08 to 10N / 100mm. When the irradiation of ultraviolet rays is less than 30 mJ / cm 2, curing of the pressure-sensitive adhesive layer 14 may be insufficient, and the peeling force with the adhesive film 12 may be too large. As a result, adhesiveness with a die bond film increases, and the pick-up property falls. In addition, glue residue may occur in the adhesive film after pick-up. On the other hand, when accumulated light amount exceeds 1000 mJ / cm <2>, the peeling force with the adhesive film 12 may become small too much. As a result, interfacial peeling may occur between the adhesive layer 14 and the adhesive film 12. As a result, chip scattering may occur at the time of dicing of a semiconductor wafer. In addition, thermal damage may be given to the base 13. Moreover, hardening of the adhesive layer 14 advances excessively, tensile elasticity modulus becomes large too much, and expandability falls. In addition, you may irradiate an ultraviolet-ray after the bonding process with the adhesive film 12 mentioned later. In this case, it is preferable to perform ultraviolet irradiation from the base material 13 side.

The manufacturing process of the adhesive film 12 is performed as follows. That is, the adhesive composition solution for forming the adhesive film 12 is apply | coated so that it may become predetermined thickness on the substrate separator 22, and a coating film is formed. Thereafter, the coating film is dried under predetermined conditions to form an adhesive film 12. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating etc. are mentioned. Moreover, as dry conditions, it can set suitably according to the thickness, material, etc. of a coating film. Specifically, it is performed within the range of a drying temperature of 70-160 degreeC and 1 to 5 minutes of drying time, for example. Moreover, after apply | coating an adhesive composition on the 2nd separator 23 and forming a coating film, you may dry the coating film on the said dry conditions, and may form the adhesive film 12. FIG. Thereafter, the adhesive film 12 is bonded together with the second separator 23 on the substrate separator 22. Thereby, the laminated | multilayer film by which the adhesive film 12 and the 2nd separator 23 were laminated | stacked sequentially on the base separator 22 is produced (refer FIG.3 (b)). This laminated film may have a long shape wound in a roll shape. In this case, it is preferable to wind up while applying tensile tension in the longitudinal direction or the width direction so that loosening, winding shift, and position shift may not occur in the adhesive film 12.

Next, the adhesive film 12 is punched in accordance with the shape of the semiconductor wafer to be attached, and bonded to the dicing film 11. Thereby, the adhesive film 1 with a dicing sheet is obtained. That is, while peeling the 1st separator 21 from the dicing film 11, the 2nd separator 23 is peeled from the punched adhesive film 12, the adhesive film 12 and the adhesive layer 14 are carried out. Are bonded to each other so as to be a bonding surface (see FIG. 3 (c)). At this time, crimping | bonding is performed with respect to at least one of the dicing film 11 or the adhesive film 12, applying tensile tension to a peripheral edge part. In addition, when the dicing film 11 is long wound by roll shape, it is preferable to convey with respect to the dicing film 11 without applying tensile tension to the maximum in the longitudinal direction. This is to suppress the tensile residual distortion of the film. However, you may apply tensile tension to the dicing film 11 within the range of 10-25 N from a viewpoint of preventing generation | occurrence | production of loosening, winding shift | offset | difference, position shift | offset | difference, a void (bubble), etc .. If it is in the said range, even if the tensile residual distortion remains in the dicing film 11, the interface peeling between the dicing film 11 and the adhesive film 12 can be prevented.

In addition, bonding of the dicing film 11 and the adhesive film 12 can be performed by crimping | bonding, for example. At this time, although lamination temperature is not specifically limited, Usually, 30-80 degreeC is preferable, 30-60 degreeC is more preferable, 30-50 degreeC is especially preferable. Moreover, although linear pressure is not specifically limited, Usually, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. With respect to the adhesive film 12 in which the glass transition temperature of an organic component exists in the range of -20-50 degreeC, an adhesive film is adjusted by laminating temperature and / or linear pressure in the said numerical range, respectively, and bonding with the dicing film 11 Peeling force F2 between (12) and dicing film 11 can be controlled in the range of 0.08-10N / 100mm. Here, for example, peeling force F2 between the dicing film 11 and the adhesive film 12 can be enlarged by making lamination temperature high in the said range. Moreover, peeling force F2 can also be enlarged also by making linear pressure large in the said range.

Subsequently, the base separator 22 on the adhesive film 12 is peeled off, and the cover film 2 is bonded while applying tensile tension. Subsequently, the dicing film 11 is punched in a circular shape corresponding to the ring frame at predetermined intervals. Thereby, the film 10 for semiconductor devices in which the precut adhesive film 1 with a dicing sheet was laminated | stacked on the cover film 2 at predetermined intervals is produced.

It is preferable to perform bonding of the adhesive film 12 in the adhesive film 1 with a dicing sheet to the cover film 2 by crimping | bonding. At this time, although lamination temperature is not specifically limited, Usually, 20-80 degreeC is preferable, 20-60 degreeC is more preferable, 20-50 degreeC is especially preferable. Moreover, although linear pressure is not specifically limited, Usually, 0.1-20 kgf / cm is preferable and 0.2-10 kgf / cm is more preferable. With respect to the adhesive film 12 in which the glass transition temperature of an organic component exists in the range of -20-50 degreeC, a lamination temperature and / or a linear pressure are adjusted in the said numerical range, respectively, and it bonds with the cover film 2, an adhesive film ( Peeling force F1 between 12) and cover film 2 can be controlled in the range of 0.025-0.075N / 100mm. Here, the peeling force F1 between the adhesive film 1 with a dicing sheet and the cover film 2 can be enlarged by making lamination temperature high in the said range, for example. Moreover, peeling force F1 can also be enlarged also by making linear pressure large in the said range. Moreover, about the cover film 2, it is preferable to convey, without adding tensile tension to the maximum in the longitudinal direction. This is to suppress the tensile residual distortion of the cover film 2. However, from a viewpoint of preventing generation | occurrence | production of loosening, winding shift | offset | difference, position shift | offset | difference, a void (bubble), etc. to the cover film 2, you may apply tensile tension within the range of 10-25N. If it is in the said range, even if the tensile residual distortion remains in the cover film 2, the film lifting phenomenon of the cover film 2 with respect to the adhesive film 1 with a dicing sheet can be prevented from occurring.

Moreover, the 1st separator 21 bonded on the adhesive layer 14 of the dicing film 11, the base material separator 22 of the adhesive film 12, and the 2nd bonded on the adhesive film 12 thereof The separator 23 is not particularly limited, and a conventionally known release treated film can be used. The first separator 21 and the second separator 23 each have a function as a protective material. In addition, the substrate separator 22 has a function as a substrate when the adhesive film 12 is transferred onto the pressure-sensitive adhesive layer 14 of the dicing film 11. The material constituting each of these films is not particularly limited, and conventionally known ones can be employed. Specifically, the plastic film, paper, etc. which were surface-coated with peeling agents, such as polyethylene terephthalate (PET), polyethylene, a polypropylene, a fluorine-type peeling agent and a long chain alkylacrylate type | system | group peeling agent, are mentioned.

The adhesive film of the present invention can be used as a die bond film or a film for flip chip type semiconductor back surface. A flip chip type semiconductor back surface film is used for forming on the back surface of a semiconductor element (for example, a semiconductor chip) flip-chip-connected on a to-be-adhered body (for example, various board | substrates, such as a lead frame and a circuit board). .

<Examples>

In the following, preferred embodiments of the present invention will be described in detail by way of example. However, unless otherwise indicated, the material, compounding quantity, etc. which are described in this Example are not the meaning which limits only the summary of this invention only to them. In addition, a part means a weight part.

(Example 1)

<Production of dicing film>

88.8 parts of 2-ethylhexyl acrylate (henceforth "2EHA"), 2-hydroxyethyl acrylate (henceforth "HEA") in the reaction container provided with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirring apparatus. ) 11.2 parts, 0.2 parts of benzoyl peroxide, and 65 parts of toluene were put, and the polymerization process was performed at 61 degreeC for 6 hours in nitrogen stream, and the acrylic polymer A of the weight average molecular weight 850,000 was obtained. The molar ratio of 2EHA to HEA was set at 100 mol to 20 mol. In addition, the weight average molecular weight was measured by GPC (gel permeation chromatography) and it was set as the value computed by polystyrene conversion.

12 parts (80 mol% with respect to HEA) of 2-methacryloyloxyethyl isocyanate (henceforth "MOI") are added to this acrylic polymer A, and addition reaction process is performed at 50 degreeC for 48 hours in air stream, And acrylic polymer A 'were obtained.

Next, with respect to 100 parts of acrylic polymer A ', 8 parts of isocyanate type crosslinking agents (brand name "Coronate L", Nippon Polyurethane Co., Ltd. product), and a photoinitiator (brand name "Irgacure 651", Ciba specialty chemicals) 5 parts) was added, and the adhesive solution was produced.

The adhesive solution prepared above was apply | coated on the surface which carried out the silicone process of PET peeling liner (1st separator), and it heat-crosslinked at 120 degreeC for 2 minutes, and formed the adhesive layer of thickness 10micrometer. Subsequently, the polyolefin film (base material) of thickness 100micrometer was bonded to the surface of the said adhesive layer. Then, it preserve | saved for 24 hours at 50 degreeC.

Moreover, the said PET peeling liner was peeled off, and ultraviolet-ray was directly irradiated only to the part (circular shape of diameter 220mm) corresponded to the semiconductor wafer adhesion part (circular shape of diameter 200mm) of an adhesive layer. This produced the dicing film which concerns on a present Example. In addition, irradiation conditions are as follows. In addition, the tensile elasticity modulus of the adhesive layer was measured by the method of mentioning later, and the tensile elasticity modulus was 19.7 Mpa.

<Irradiation condition of ultraviolet rays>

Ultraviolet (UV) Irradiation Device: High Pressure Mercury Lamp

UV irradiation integrated light quantity: 500mJ / ㎠

Output: 120W

Irradiation intensity: 200mW / ㎠

<Production of adhesive film>

Isocyanate type crosslinking agent (Nippon Polyurethane (100g) with respect to 100 parts of acrylic ester type polymers (Negami Kogyo Co., Ltd. make, brand name; Paracron W-197CM, Tg: 18 degreeC) which have ethyl acrylate-methylmethacrylate as a main component. Co., Ltd. manufacture, brand name: Coronate HX) 2 parts, epoxy resin (JER Corporation make, Epicoat 1004) 50 parts, phenol resin (Mitsui Chemical Industries, Ltd. make, brand name: Mirex XLC-3L) 10 parts As an inorganic filler, 30 parts of spherical silica (manufactured by Admatex Co., Ltd., trade name; SO-25R, average particle diameter: 0.5 mu m) was dissolved in methyl ethyl ketone, and prepared to have a concentration of 18.0% by weight. Moreover, it was 531 Mpa when the tensile elasticity modulus of the adhesive film before thermosetting was measured by the method mentioned later.

The solution of this adhesive composition was apply | coated with a fountain coater on a release process film (substrate separator), and an application layer was formed, and 150 degreeC and 10 m / s hot air were sprayed directly on this application layer for 2 minutes, and it dried. . This produced the 25-micrometer-thick adhesive film on the mold release process film. In addition, as a mold release process film (substrate separator), what carried out the silicone mold release process to the polyethylene terephthalate film (50 micrometers in thickness) was used.

<Production of adhesive film with dicing sheet>

Subsequently, the adhesive film was cut out into a circular shape having a diameter of 230 mm, and the pressure-sensitive adhesive layer and the adhesive film cut out into a circular shape were bonded to each other. Bonding uses a nip roll, bonding conditions are lamination temperature 50 degreeC, linear pressure 3kgf / cm, and also the base material separator on an adhesive film is peeled off, and as a mold release process film (cover film), the polyethylene terephthalate processed by silicone mold release The film (38 micrometers in thickness) was bonded. At this time, in order to prevent position shift, voids, etc. with respect to a cover film, the lamination temperature is not added but linear pressure is 2 kgf / cm, applying the tensile tension of 17N to MD direction using a dancer roll. It bonded together and produced the adhesive film with a dicing sheet.

<Production of film for semiconductor device>

Moreover, the film for semiconductor devices which concerns on this Example with which 200 adhesive sheets with a dicing sheet were bonded by space | interval of 10 mm was obtained by punching a dicing film in circular shape of diameter 270mm so that an adhesive film might become the center.

(Example 2)

<Production of dicing film>

The dicing film which concerns on a present Example used the same thing as the said Example 1.

<Production of adhesive film>

Isocyanate type crosslinking agent (Nippon Polyurethane () Ltd., brand name; Coronate HX) 4 parts, epoxy resin (JER Co., Ltd. make, Epicoat 1004) 30 parts, phenol resin (Mitsui Chemical Industries, Ltd., brand name: Mirex XLC-3L) 15 parts As an inorganic filler, 60 parts of spherical silica (manufactured by Admatex Co., Ltd., trade name; SO-25R, average particle diameter: 0.5 mu m) was dissolved in methyl ethyl ketone, and prepared to have a concentration of 18.0% by weight. Moreover, it was 224 Mpa when the tensile elasticity modulus of the adhesive film before thermosetting was measured by the method mentioned later.

<Production of film for semiconductor device>

The film for semiconductor devices according to the second embodiment was bonded to the polyethylene terephthalate film (thickness: 38 µm) subjected to the silicone release treatment in the same manner as in the first embodiment except that the adhesive film was used. Produced.

(Example 3)

<Production of dicing film>

The dicing film which concerns on a present Example is the said implementation except having made thickness of the adhesive layer after drying into 5 micrometers and thickness of the polyolefin film (base material) to be used for 40 micrometers, and making the total thickness of a dicing film into 45 micrometers. In the same manner as in Example 1, a dicing film according to the present Example was produced.

<Production of adhesive film>

The adhesive film which concerns on a present Example used the same thing as the said Example 1.

<Production of film for semiconductor device>

The film for semiconductor devices according to the third embodiment of the present invention was bonded to the polyethylene terephthalate film (thickness 100 µm) in which the silicone mold release treatment was performed in the same manner as in the first embodiment except that the dicing film was used. Was produced.

(Example 4)

<Production of dicing film>

The dicing film which concerns on a present Example is the said implementation except having made thickness of the adhesive layer after drying into 10 micrometers, thickness of the polyolefin film (base material) to be used, and making the total thickness of a dicing film into 160 micrometers. In the same manner as in Example 1, a dicing film according to the present Example was produced.

<Production of adhesive film>

The adhesive film which concerns on a present Example used the same thing as the said Example 1.

<Production of film for semiconductor device>

The film for semiconductor devices in the film for semiconductor devices according to the fourth embodiment was bonded to the polyethylene terephthalate film (thickness 12 µm) in which the silicone mold release treatment was performed in the same manner as in the first embodiment except that the dicing film was used. Was produced.

(Example 5)

<Production of dicing film>

The dicing film which concerns on a present Example is the said implementation except having made thickness of the adhesive layer after drying into 5 micrometers, thickness of the polyolefin film (base material) to be used, and making the total thickness of a dicing film into 80 micrometers. A dicing film according to the present example was produced in the same manner as in Example 1.

<Production of adhesive film>

The adhesive film which concerns on a present Example used the same thing as the said Example 1.

<Production of film for semiconductor device>

In the film for semiconductor devices according to the fifth embodiment, the polyethylene terephthalate film subjected to the silicone release treatment in the same manner as in the first embodiment except that the lamination temperature was 50 ° C and linear pressure 5 kg / cm using the dicing film. The film for semiconductor device manufacture was produced by bonding (75 micrometers in thickness).

(Comparative Example 1)

<Production of dicing film>

The dicing film which concerns on this comparative example is 50 micrometers in thickness, and the thickness of the polyolefin film (base material) to be used was 150 micrometers, and the said dicing film was carried out except that the total thickness of the dicing film was 200 micrometers. In the same manner as in Example 1, a dicing film according to this comparative example was produced.

<Production of film for semiconductor device>

The polyethylene terephthalate film subjected to silicone release treatment in the same manner as in Example 1 except that the film for semiconductor devices according to Comparative Example 1 was laminated at a temperature of 60 ° C. and a linear pressure of 5 kg / cm using the dicing film. The film for semiconductor devices was produced by bonding (12 micrometers in thickness).

(Comparative Example 2)

<Production of dicing film>

The dicing film which concerns on this comparative example made the said thickness except that the thickness of the adhesive layer after drying set the thickness of the polyolefin film (base material) to 15 micrometers, and to use 40 micrometers, and made the total thickness of a dicing film into 55 micrometers. In the same manner as in Example 1, a dicing film according to this comparative example was produced.

<Production of film for semiconductor device>

The film for semiconductor devices according to the present comparative example 2 was bonded to the polyethylene terephthalate film (150 µm thick) subjected to the silicone release treatment in the same manner as in Example 1, except that the dicing film was used. Produced.

(Measurement of peeling force)

Peeling force between an adhesive film and a cover film in the film for semiconductor devices obtained by each Example and the comparative example, peeling force between a dicing film and an adhesive film, and peeling force between a cover film and a dicing film (adhesive layer) The measurement was carried out by a T-type peeling test (JIS K6854-3) under conditions of a temperature of 23 ± 2 ° C., a relative humidity of 55 ± 5% Rh, and a peel rate of 300 mm / min. In addition, the brand name "Autograph AGS-H" (made by Shimadzu Corporation) was used as a tensile tester.

(Tensile Modulus of Adhesive Layer)

The value of the tensile elasticity modulus of an adhesive layer is based on the following measuring method. That is, the adhesive layer 14 is cut out of a sample having a length of 30.0 mm, a width of 10.0 mm, and a cross-sectional area of 0.1 to 0.5 mm 2. The sample was subjected to a tensile test in the MD direction at a measurement temperature of 23 ° C., a distance between the chucks, 20 mm, and a tensile speed of 50 mm / min, to measure the amount of change (mm) due to the extension of the sample. Thereby, in the obtained SS (Strain-Strength) curve, a tangent line is drawn at the initial start part thereof, the tensile strength when the tangent line corresponds to 100% elongation is divided by the cross-sectional area, and the value obtained is divided by the tensile strength of the pressure-sensitive adhesive layer. It was set as elastic modulus.

(Tensile Modulus of Adhesive Film Before Thermosetting)

The adhesive composition of the Example and the comparative example was apply | coated so that it might become 100 micrometers on the release liner which performed the mold release process, and the dicing film was obtained. About this adhesive film, the tensile elasticity modulus in 23 degreeC was measured using the viscoelasticity measuring apparatus (Leometrics company make: model: RSA-II). More specifically, the sample size is set to 30 mm in length x 5 mm in width x 0.1 mm in thickness, and the measurement sample is set in a film tension measurement jig, and the frequency is 10.0 Hz, the distortion is 0.025%, and the temperature increase rate in the temperature range of -30 to 280 ° C. It measured under the conditions of 10 degree-C / min.

(With or without surface peeling and film lifting)

Confirmation of the film lifting in the film for semiconductor devices obtained by each Example and the comparative example was performed as follows. That is, each film for semiconductor devices was left to stand for 120 hours in the freezer of temperature -30 +/- 2 degreeC. Moreover, it was left to stand for 24 hours in the environment of the temperature of 23 +/- 2 degreeC, and 55 +/- 5% Rh of relative humidity. Then, the presence or absence of the interface peeling and the film lifting between each film in the film for semiconductor devices was confirmed. Evaluation criteria made (circle) the case where no interface peeling and film lifting were observed visually, and made the case where it observed ×.

(Voids after mounting)

The presence or absence of the void of the film for semiconductor devices obtained by each Example and the comparative example was confirmed as follows. That is, the cover film was peeled from each film for semiconductor devices, and the semiconductor wafer was mounted on the adhesive film. As a semiconductor wafer, the thing of 8 inches in size and thickness of 75 micrometers was used. The mounting conditions of the semiconductor wafer were as follows.

<Join conditions>

Adhesion apparatus: ACC Corporation make, brand name; RM-300

Attachment Speedometer: 50 mm / sec Attachment Pressure: 0.2 MPa

Adhesion temperature: 50 ℃

Then, the presence or absence of the void (bubble) of the bonding surface of the adhesive film with a dicing sheet and a semiconductor wafer was confirmed with the microscope. The results are shown in Table 1 below.

(Evaluation of pickup)

The cover film was peeled from each film for semiconductor devices, and the semiconductor wafer was mounted on the adhesive film. As a semiconductor wafer, the thing of 8 inches in size and thickness of 75 micrometers was used. The mounting conditions of the semiconductor wafer were the same as above.

Subsequently, the semiconductor wafer was diced according to the following conditions, and 30 semiconductor chips were formed. In addition, the semiconductor chip was picked up together with the adhesive film. The pickup was performed for 30 semiconductor chips (10 mm in length x 10 mm in width), and the success rate was calculated by counting the case where the semiconductor chip was successfully picked up without damage. The results are shown in Table 1 below. Moreover, in the comparative example 1, the conveyance error (not picking) generate | occur | produced several times, without the peeling of a cover film and an adhesive film at the time of bonding in a mounter. Pickup conditions are as follows.

<Dicing Condition>

Dicing Method: Step Cut

Dicing apparatus: DISCO DFD6361 (brand name, a disco company)

Dicing Speed: 30mm / sec

Dicing blade: Z1; Disco company production "NBC-ZH2030-SE27HCD"

Z2; Disco company production "NBC-ZH1030-SE27HCB"

Dicing blade rotation speed: Z1; 40,000 rpm, Z2; 45,000 rpm

Dicing tape cutting depth: 20 μm

Wafer Chip Size: 10mm × 10mm

<Pickup condition>

Pickup device: Brand name `` SPA-300 '' manufactured by Shinkawa Corporation

Number of needles: 9

Lifting amount: 300㎛

Lifting speed: 10mm / sec

Pulling volume: 3mm

<Evaluation of voids by wound wound transcription after 1 month cold storage>

The film for semiconductor devices obtained by each Example and the comparative example was wound up in roll shape with winding tension 2 kg. And in this state, it was left to stand in the refrigerator of temperature 5 degreeC for 1 month. Then, after returning to room temperature, the roll was unwinded and the semiconductor wafer was mounted using the 100-th dicing die-bonding film, and the presence or absence of the void was visually confirmed. As a semiconductor wafer, the thing of 8 inches in size and thickness of 75 micrometers was used. In addition, joining conditions were made the same as void evaluation after said mount. The results are shown in Table 1.

In addition, peeling force F1 of Table 1 shows the peeling force between the adhesive film with a dicing sheet, and a cover film, peeling force F2 shows the peeling force between a dicing film, and an adhesive film, and peeling force F3 is a cover film and a die | dye. The peeling force between the singling films (adhesive layer) is shown.

(result)

As is apparent from Table 1, in the film for semiconductor devices of Examples 1 to 5, no void was observed immediately after mounting of the semiconductor wafer. In addition, when wound and stored for 1 month, the void by the wound wound transcription was not confirmed. Moreover, the adhesive film with a dicing sheet and the cover film were able to be peeled off (picking) suitably at the time of bonding to a semiconductor wafer by a mounter apparatus. In contrast, in the film for semiconductor devices of Comparative Example 1, voids were confirmed immediately after mounting of the semiconductor wafer. Moreover, when winding and cold storage for one month, the void by the wound wound transcription was confirmed. Moreover, the phenomenon of film lifting of a cover film was also confirmed. In addition, at the time of mounting of a semiconductor wafer, a conveyance error occurred several times without the cover film peeling from the film for semiconductor devices. In addition, chip scattering and chipping occurred during dicing of the semiconductor wafer. Moreover, in the film for semiconductor devices of the comparative example 2, although pick-up property was favorable, the void was confirmed immediately after mounting of a semiconductor wafer. Moreover, when winding up and cold storage for 1 month, the void by the wound wound transcription was confirmed. Moreover, the phenomenon of film lifting of a cover film was also confirmed.

1: adhesive film with dicing sheet
2: cover film
10: film for semiconductor devices
11: dicing film
12: adhesive film
13: description
14: adhesive layer
21: first separator
22: substrate separator
23: second separator

Claims (5)

An adhesive film with a dicing sheet, in which an adhesive film is laminated on a dicing film, is a film for a semiconductor device laminated on a cover film at a predetermined interval, the thickness of the cover film is Ta, and the thickness of the dicing film is When it is set as Tb, Ta / Tb exists in the range of 0.07-2.5, The film for semiconductor devices characterized by the above-mentioned. The peel force F1 between the adhesive film and the cover film in the T-type peel test under a temperature of 23 ± 2 ° C. and a peel rate of 300 mm / min is in the range of 0.025 to 0.075 N / 100 mm. And a peel force F2 between the adhesive film and the dicing film is in the range of 0.08 to 10N / 100mm, and the F1 and the F2 satisfy a relationship of F1 <F2. The film Ta for semiconductor device according to claim 1 or 2, wherein the thickness Ta of the cover film is 10 to 100 µm. The semiconductor device film according to any one of claims 1 to 3, wherein the thickness Tb of the dicing film is 25 to 180 µm. The semiconductor device manufactured using the film for semiconductor devices in any one of Claims 1-4.

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