KR101816838B1 - 나노 임프린트용 레플리카 몰드, 그 제조방법 및 나노 임프린트용 레플리카 몰드 제조장치 - Google Patents
나노 임프린트용 레플리카 몰드, 그 제조방법 및 나노 임프린트용 레플리카 몰드 제조장치 Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
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- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B29C35/0888—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using transparant moulds
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- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
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- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
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- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
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- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Abstract
본 발명의 나노 임프린트용 레플리카 몰드는, 플라스틱 필름으로 형성된 베이스; 상기 베이스에 형성된 전사부; 및 상기 베이스에 분리 가능하게 형성되고, 상기 전사부가 노출될 수 있도록 중공이 형성되며, 상기 전사부의 외주면이 번져서 경화되어 형성된 파티클이 형성되는 가이드 필름을 포함하고, 상기 전사부는 레진으로 형성되고, 요철 형상의 패턴이 형성된다.
Description
도 2는 레플리카 몰드, 스탬프 몰드, 기판의 패턴 형성 순서도,
도 3은 본 발명의 나노 임프린트용 레플리카 몰드의 구성도,
도 4는 본 발명의 나노 임프린트용 레플리카 몰드에 대한 다른 실시예의 구성도,
도 5는 본 발명의 나노 임프린트용 레플리카 몰드의 파티클 제거에 대한 구성도,
도 6은 본 발명의 나노 임프린트용 레플리카 몰드의 파티클 제거에 대한 평면도를 나타낸 도면이다.
30 : 가이드 필름 40 : 쿠션층
Claims (8)
- 마스터 몰드로부터 패턴이 전사되고, 기판에 패턴을 형성시키는 스템프 몰드에 상기 패턴을 전사시키는 나노 임프린트용 레플리카 몰드로서,
플라스틱 필름으로 형성된 베이스;
중공을 구비하고, 상기 베이스 상에 형성되는 가이드 필름; 및
상기 중공에 레진이 충진되고, 상기 마스터 몰드의 가압에 의하여 상기 패턴이 전사되는 전사부;를 포함하고,
상기 마스터 몰드로부터 패턴 전사시에 상기 전사부 외주면으로 번진 부분이 경화되어 형성되는 파티클을 제거하도록, 상기 가이드 필름은 상기 베이스로부터 분리 가능하게 형성되는 것을 특징으로 하는, 나노 임프린트용 레플리카 몰드.
- 삭제
- 삭제
- 삭제
- 삭제
- 청구항 1에 있어서,
상기 베이스의 일면에는 탄성을 갖는 쿠션층이 형성된 것을 특징으로 하는,
나노 임프린트용 레플리카 몰드.
- 청구항 1의 나노 임프린트용 레플리카 몰드를 이용한 나노 임프린트용 레플리카 몰드 제조장치로서,
상기 가이드 필름의 중공에 레진을 충진하여 상기 전사부를 형성하는 충진부;
일측에 마스터 몰드가 부착되고, 상기 마스터 몰드를 상하로 승강시켜 상기 마스터 몰드의 패턴을 상기 전사부에 전사시키는 가압부; 및
상기 가압부 방향으로 광을 조사하는 조사부를 포함하는, 나노 임프린트용 레플리카 몰드 제조장치.
- 청구항 1의 나노 임프린트용 레플리카 몰드를 이용한 나노 임프린트용 레플리카 몰드 제조방법으로서,
상기 가이드 필름의 중공에 레진을 충진하여 상기 전사부를 형성하는 충진단계;
상기 전사부로 마스터 몰드를 이동시키고, 상기 마스터 몰드를 가압하여 패턴을 형성하는 패턴 형성단계;
상기 전사부에 광을 조사하여 상기 전사부를 경화하는 경화단계; 및
상기 가이드 필름을 제거하는 제거단계를 포함하는, 나노 임프린트용 레플리카 몰드의 제조방법.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160086614A KR101816838B1 (ko) | 2016-07-08 | 2016-07-08 | 나노 임프린트용 레플리카 몰드, 그 제조방법 및 나노 임프린트용 레플리카 몰드 제조장치 |
| TW106122628A TWI693141B (zh) | 2016-07-08 | 2017-07-06 | 奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置 |
| JP2018562675A JP2019519108A (ja) | 2016-07-08 | 2017-07-07 | ナノインプリント用レプリカモールド、その製造方法およびナノインプリント用レプリカモールド製造装置 |
| PCT/KR2017/007306 WO2018009026A1 (ko) | 2016-07-08 | 2017-07-07 | 나노 임프린트용 레플리카 몰드, 그 제조방법 및 나노 임프린트용 레플리카 몰드 제조장치 |
| CN201780029355.5A CN109073979A (zh) | 2016-07-08 | 2017-07-07 | 纳米压印用复制模、其制造方法及纳米压印用复制模制造装置 |
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| KR1020160086614A KR101816838B1 (ko) | 2016-07-08 | 2016-07-08 | 나노 임프린트용 레플리카 몰드, 그 제조방법 및 나노 임프린트용 레플리카 몰드 제조장치 |
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| CN (1) | CN109073979A (ko) |
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| KR101990122B1 (ko) * | 2018-11-21 | 2019-06-19 | 주식회사 기가레인 | 임프린트 리소그래피용 리플리카 몰드 제작 장치 및 그 제작 방법 |
| KR102180106B1 (ko) | 2019-04-26 | 2020-11-18 | 부산대학교 산학협력단 | 슬리브형 나노 및 마이크로 패턴을 가지는 롤 금형 제조 방법 |
| KR102832186B1 (ko) * | 2020-12-01 | 2025-07-09 | 주식회사 기가레인 | 나노 임프린트용 레진 경화 장치 |
| CN115373219A (zh) * | 2022-08-29 | 2022-11-22 | 歌尔光学科技有限公司 | 塑料晶圆的处理方法、塑料晶圆、光栅片及光波导器件 |
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| JP5558327B2 (ja) * | 2010-12-10 | 2014-07-23 | 株式会社東芝 | パターン形成方法、半導体装置の製造方法およびテンプレートの製造方法 |
| EP2979845A1 (en) * | 2012-05-08 | 2016-02-03 | Asahi Kasei E-materials Corporation | Transfer method and thermal nanoimprinting apparatus |
| JP6010481B2 (ja) * | 2013-02-27 | 2016-10-19 | 旭化成株式会社 | フィルム状モールドの製造方法 |
| JP6331292B2 (ja) * | 2013-08-30 | 2018-05-30 | 大日本印刷株式会社 | インプリント方法およびインプリント装置 |
| KR102135913B1 (ko) * | 2013-10-28 | 2020-07-20 | 엘지디스플레이 주식회사 | 클램프 및 이를 포함하는 유기전계발광표시장치의 제조장치 |
| WO2015064685A1 (ja) * | 2013-11-01 | 2015-05-07 | Jx日鉱日石エネルギー株式会社 | 帯状のフィルム基材上に不連続なパターンを有する塗膜を形成するための塗布装置、及び凹凸パターンを有する帯状のフィルム部材の製造方法 |
| KR20150079055A (ko) * | 2013-12-31 | 2015-07-08 | 주식회사 효성 | 사이드필름이 적용된 디스플레이용 광학필름 및 이의 제조방법 |
| JP6317247B2 (ja) * | 2014-12-22 | 2018-04-25 | 富士フイルム株式会社 | インプリント用モールド |
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- 2017-07-07 WO PCT/KR2017/007306 patent/WO2018009026A1/ko not_active Ceased
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010000719A (ja) * | 2008-06-20 | 2010-01-07 | Mitsubishi Rayon Co Ltd | フィルム状レプリカモールド、その製造方法および微細凹凸構造を有するフィルム製品の製造方法 |
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| Publication number | Publication date |
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| WO2018009026A1 (ko) | 2018-01-11 |
| TWI693141B (zh) | 2020-05-11 |
| JP2019519108A (ja) | 2019-07-04 |
| CN109073979A (zh) | 2018-12-21 |
| TW201801881A (zh) | 2018-01-16 |
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