KR101070353B1 - 반도체 소자 제조장치의 가스 인젝터 - Google Patents
반도체 소자 제조장치의 가스 인젝터 Download PDFInfo
- Publication number
- KR101070353B1 KR101070353B1 KR1020040041366A KR20040041366A KR101070353B1 KR 101070353 B1 KR101070353 B1 KR 101070353B1 KR 1020040041366 A KR1020040041366 A KR 1020040041366A KR 20040041366 A KR20040041366 A KR 20040041366A KR 101070353 B1 KR101070353 B1 KR 101070353B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- injector
- branch pipe
- gas injector
- main supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
- 기판이 안치되는 반응챔버 내에 가스를 공급하는 가스 인젝터에 있어서,상기 반응챔버를 관통하여 끝단이 상기 반응챔버의 내부에 위치하도록 설치되며 외부로부터 가스를 공급받는 주공급관과,상기 주공급관의 끝단에서 복수개로 분기되는 분기관과,상기 분기관의 끝단에서 복수개로 분기되는 연장 분기관과,상기 연장 분기관의 분기된 복수의 끝단들을 함께 연결하는 인젝터 포트를 구비하며,상기 인젝터 포트에는 상기 연장 분기관의 각각의 끝단에 인접하여 복수 개의 분사공이 형성되고,상기 주공급관은 자신을 회전축으로 하여 회전가능하게 설치되는 것을 특징으로 하는 가스 인젝터.
- 제1항에 있어서, 상기 인젝터 포트가 상기 연장 분기관의 복수개의 끝단에 함께 연결되도록 단수개 설치되는 것을 특징으로 하는 가스 인젝터.
- 삭제
- 제1항에 있어서, 상기 분기관들이 모두 동일한 길이를 갖는 것을 특징으로 하는 가스 인젝터.
- 제1항에 있어서, 상기 분기관은 상기 주공급관의 끝단에서 방사형으로 분기되는 것을 특징으로 하는 가스 인젝터.
- 삭제
- 삭제
- 제1항에 있어서, 상기 인젝터 포트는 막대형 또는 판형인 것을 특징으로 하는 가스 인젝터.
- 제1항에 있어서, 상기 인젝터 포트는 상기 기판과 나란하게 설치되는 것을 특징으로 하는 가스 인젝터.
- 삭제
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20030041412 | 2003-06-25 | ||
| KR1020030041412 | 2003-06-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20050001318A KR20050001318A (ko) | 2005-01-06 |
| KR101070353B1 true KR101070353B1 (ko) | 2011-10-05 |
Family
ID=33536242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020040041366A Expired - Fee Related KR101070353B1 (ko) | 2003-06-25 | 2004-06-07 | 반도체 소자 제조장치의 가스 인젝터 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20040265195A1 (ko) |
| KR (1) | KR101070353B1 (ko) |
| CN (1) | CN1576391B (ko) |
| TW (1) | TW200507050A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101608457B1 (ko) * | 2014-09-29 | 2016-04-01 | 주식회사 티이애플리케이션 | 항온용 저장탱크 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101107502B1 (ko) * | 2005-01-19 | 2012-02-06 | 주성엔지니어링(주) | 표시소자의 제조장치 |
| US8333839B2 (en) * | 2007-12-27 | 2012-12-18 | Synos Technology, Inc. | Vapor deposition reactor |
| US8470718B2 (en) * | 2008-08-13 | 2013-06-25 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film |
| US8758512B2 (en) | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
| US20110076421A1 (en) * | 2009-09-30 | 2011-03-31 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film on curved surface |
| CN101898093A (zh) * | 2010-07-20 | 2010-12-01 | 江苏瑞泰科技有限公司 | 纺丝油剂的加热搅拌装置 |
| KR20130079489A (ko) * | 2010-07-28 | 2013-07-10 | 시너스 테크놀리지, 인코포레이티드 | 기판상에 막을 증착하기 위한 회전 반응기 조립체 |
| US8840958B2 (en) | 2011-02-14 | 2014-09-23 | Veeco Ald Inc. | Combined injection module for sequentially injecting source precursor and reactant precursor |
| JP6170340B2 (ja) * | 2013-05-21 | 2017-07-26 | 東京エレクトロン株式会社 | ガス供給ヘッド、ガス供給機構及び基板処理装置 |
| CN105195036A (zh) * | 2015-09-18 | 2015-12-30 | 宁波天工机械密封有限公司 | 混合搅拌机 |
| JP6710134B2 (ja) * | 2016-09-27 | 2020-06-17 | 東京エレクトロン株式会社 | ガス導入機構及び処理装置 |
| TWI616555B (zh) | 2017-01-17 | 2018-03-01 | 漢民科技股份有限公司 | 應用於半導體設備之噴氣裝置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58185498A (ja) * | 1982-04-21 | 1983-10-29 | Clarion Co Ltd | 薄膜気相成長装置 |
| JP2001254181A (ja) * | 2000-01-06 | 2001-09-18 | Tokyo Electron Ltd | 成膜装置および成膜方法 |
| JP2002075692A (ja) * | 2000-04-26 | 2002-03-15 | Unaxis Balzer Ag | プラズマ反応器 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4553124A (en) * | 1983-09-16 | 1985-11-12 | Carron & Company | Strain gauge transducer assembly |
| JPH02114530A (ja) * | 1988-10-25 | 1990-04-26 | Mitsubishi Electric Corp | 薄膜形成装置 |
| US5103863A (en) * | 1989-12-12 | 1992-04-14 | Conoco Inc. | Inlet distributors and outlet collectors that are rate insensitive |
| US5453124A (en) * | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
| CH687258A5 (de) * | 1993-04-22 | 1996-10-31 | Balzers Hochvakuum | Gaseinlassanordnung. |
| JP3468859B2 (ja) * | 1994-08-16 | 2003-11-17 | 富士通株式会社 | 気相処理装置及び気相処理方法 |
| DE29517100U1 (de) * | 1995-10-17 | 1997-02-13 | Zimmer, Johannes, Klagenfurt | Strömungsteilungs- und -umformungskörper |
| US5938333A (en) * | 1996-10-04 | 1999-08-17 | Amalgamated Research, Inc. | Fractal cascade as an alternative to inter-fluid turbulence |
| US6537418B1 (en) * | 1997-09-19 | 2003-03-25 | Siemens Aktiengesellschaft | Spatially uniform gas supply and pump configuration for large wafer diameters |
| US6399484B1 (en) * | 1998-10-26 | 2002-06-04 | Tokyo Electron Limited | Semiconductor device fabricating method and system for carrying out the same |
| US6499425B1 (en) * | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
| JP2000306884A (ja) * | 1999-04-22 | 2000-11-02 | Mitsubishi Electric Corp | プラズマ処理装置およびプラズマ処理方法 |
| US6333019B1 (en) * | 1999-04-29 | 2001-12-25 | Marc-Olivier Coppens | Method for operating a chemical and/or physical process by means of a hierarchical fluid injection system |
| KR100458982B1 (ko) * | 2000-08-09 | 2004-12-03 | 주성엔지니어링(주) | 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법 |
| AU2002221122A1 (en) * | 2000-12-12 | 2002-06-24 | Tokyo Electron Limited | Thin film forming method and thin film forming device |
| JP3924483B2 (ja) * | 2001-03-19 | 2007-06-06 | アイピーエス リミテッド | 化学気相蒸着装置 |
| KR100427996B1 (ko) * | 2001-07-19 | 2004-04-28 | 주식회사 아이피에스 | 박막증착용 반응용기 및 그를 이용한 박막증착방법 |
| KR100432704B1 (ko) * | 2001-09-01 | 2004-05-24 | 주성엔지니어링(주) | 수소화된 SiOC 박막 제조방법 |
| US20040040502A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
| US20040040503A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
| TW587139B (en) * | 2002-10-18 | 2004-05-11 | Winbond Electronics Corp | Gas distribution system and method for the plasma gas in the chamber |
| KR100862658B1 (ko) * | 2002-11-15 | 2008-10-10 | 삼성전자주식회사 | 반도체 처리 시스템의 가스 주입 장치 |
| US6921437B1 (en) * | 2003-05-30 | 2005-07-26 | Aviza Technology, Inc. | Gas distribution system |
| KR100614648B1 (ko) * | 2004-07-15 | 2006-08-23 | 삼성전자주식회사 | 반도체 소자 제조에 사용되는 기판 처리 장치 |
-
2004
- 2004-06-07 KR KR1020040041366A patent/KR101070353B1/ko not_active Expired - Fee Related
- 2004-06-24 US US10/877,298 patent/US20040265195A1/en not_active Abandoned
- 2004-06-25 TW TW093118687A patent/TW200507050A/zh unknown
- 2004-06-25 CN CN2004100499976A patent/CN1576391B/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58185498A (ja) * | 1982-04-21 | 1983-10-29 | Clarion Co Ltd | 薄膜気相成長装置 |
| JP2001254181A (ja) * | 2000-01-06 | 2001-09-18 | Tokyo Electron Ltd | 成膜装置および成膜方法 |
| JP2002075692A (ja) * | 2000-04-26 | 2002-03-15 | Unaxis Balzer Ag | プラズマ反応器 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101608457B1 (ko) * | 2014-09-29 | 2016-04-01 | 주식회사 티이애플리케이션 | 항온용 저장탱크 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050001318A (ko) | 2005-01-06 |
| TW200507050A (en) | 2005-02-16 |
| US20040265195A1 (en) | 2004-12-30 |
| CN1576391A (zh) | 2005-02-09 |
| CN1576391B (zh) | 2010-08-25 |
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