JP7224355B2 - 光散乱を調整するための多孔質のミクロン・サイズの粒子 - Google Patents
光散乱を調整するための多孔質のミクロン・サイズの粒子 Download PDFInfo
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- JP7224355B2 JP7224355B2 JP2020534969A JP2020534969A JP7224355B2 JP 7224355 B2 JP7224355 B2 JP 7224355B2 JP 2020534969 A JP2020534969 A JP 2020534969A JP 2020534969 A JP2020534969 A JP 2020534969A JP 7224355 B2 JP7224355 B2 JP 7224355B2
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- light
- light emitting
- refractive index
- porous structure
- semiconductor device
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- 239000002245 particle Substances 0.000 title claims description 99
- 238000000149 argon plasma sintering Methods 0.000 title claims description 60
- 239000011148 porous material Substances 0.000 claims description 82
- 229920000642 polymer Polymers 0.000 claims description 80
- 239000000463 material Substances 0.000 claims description 64
- 229920001296 polysiloxane Polymers 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 38
- 230000007423 decrease Effects 0.000 claims description 23
- 239000003086 colorant Substances 0.000 claims description 13
- 239000011324 bead Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 5
- 239000005373 porous glass Substances 0.000 claims description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 4
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 239000000499 gel Substances 0.000 claims 1
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- 239000011159 matrix material Substances 0.000 description 57
- 239000011358 absorbing material Substances 0.000 description 47
- 239000010410 layer Substances 0.000 description 37
- 230000008859 change Effects 0.000 description 15
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- 230000000694 effects Effects 0.000 description 10
- 239000002346 layers by function Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000008187 granular material Substances 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- -1 stud bumps Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000009365 direct transmission Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
Landscapes
- Optical Elements Other Than Lenses (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/852,822 | 2017-12-22 | ||
| US15/852,822 US10761246B2 (en) | 2017-12-22 | 2017-12-22 | Light emitting semiconductor device having polymer-filled sub-micron pores in porous structure to tune light scattering |
| EP18163955.0 | 2018-03-26 | ||
| EP18163955 | 2018-03-26 | ||
| PCT/US2018/065937 WO2019126000A1 (fr) | 2017-12-22 | 2018-12-17 | Particules poreuses de taille micrométrique pour accorder la diffusion de la lumière |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021508179A JP2021508179A (ja) | 2021-02-25 |
| JP7224355B2 true JP7224355B2 (ja) | 2023-02-17 |
Family
ID=64901675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020534969A Active JP7224355B2 (ja) | 2017-12-22 | 2018-12-17 | 光散乱を調整するための多孔質のミクロン・サイズの粒子 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3729526A1 (fr) |
| JP (1) | JP7224355B2 (fr) |
| KR (1) | KR102440864B1 (fr) |
| CN (1) | CN111712936B (fr) |
| TW (1) | TWI706165B (fr) |
| WO (1) | WO2019126000A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102693789B1 (ko) * | 2017-12-21 | 2024-08-14 | 루미리즈 홀딩 비.브이. | 조명 디바이스 |
| US11189757B2 (en) * | 2019-12-12 | 2021-11-30 | Lumileds Llc | Light emitting diodes with reflective sidewalls comprising porous particles |
| CN114512588B (zh) * | 2022-02-25 | 2023-06-16 | 苏州芯聚半导体有限公司 | 微发光二极管结构及制备方法、显示面板 |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009043903A (ja) | 2007-08-08 | 2009-02-26 | Stanley Electric Co Ltd | Ｌｅｄ光源 |
| JP2010211027A (ja) | 2009-03-11 | 2010-09-24 | Dic Corp | モアレ縞抑制フィルム、及びモアレ縞抑制機能付きプリズムシート |
| JP2011510487A (ja) | 2008-01-15 | 2011-03-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Ｌｅｄ用の光学セラミックにおける、制御された多孔による光の散乱 |
| JP2013529842A (ja) | 2010-08-20 | 2013-07-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品および散乱体 |
| US20130207148A1 (en) | 2010-08-20 | 2013-08-15 | Osram Gmbh | Radiation-emitting component with a converter material, with a thermally conductive contact and method for the production thereof |
| JP2014010894A (ja) | 2012-06-27 | 2014-01-20 | Okano Electric Wire Co Ltd | Ｌｅｄ照明装置 |
| JP2016037483A (ja) | 2014-08-11 | 2016-03-22 | シャープ株式会社 | 二核錯体およびそれを用いた発光素子、色変換基板、電子機器 |
| JP2016081040A (ja) | 2014-10-21 | 2016-05-16 | パナソニックＩｐマネジメント株式会社 | 光反射材料、ならびに光反射材料を用いた発光装置 |
| JP2017188686A (ja) | 2016-04-04 | 2017-10-12 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
| JP2017191875A (ja) | 2016-04-14 | 2017-10-19 | 株式会社小糸製作所 | 発光モジュール |
| JP2017531315A (ja) | 2014-09-03 | 2017-10-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | オプトエレクトロニクス半導体デバイス、及び、フラッシュライト |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003131001A (ja) * | 2001-05-25 | 2003-05-08 | Shipley Co Llc | 多孔性光学物質 |
| DE10153259A1 (de) * | 2001-10-31 | 2003-05-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| US20050106377A1 (en) * | 2003-11-18 | 2005-05-19 | Koestner Roland J. | Anti-glare optical film for display devices |
| TWI280673B (en) * | 2004-09-22 | 2007-05-01 | Sharp Kk | Optical semiconductor device, optical communication device, and electronic equipment |
| JP2006229259A (ja) * | 2006-05-30 | 2006-08-31 | Kyocera Corp | 発光装置 |
| DE102007015474A1 (de) * | 2007-03-30 | 2008-10-02 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| CN101661983B (zh) * | 2008-08-26 | 2012-03-14 | 富准精密工业(深圳)有限公司 | 发光二极管及其制备方法 |
| JP6114032B2 (ja) * | 2009-08-12 | 2017-04-12 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 照明装置 |
| EP2630527A1 (fr) * | 2010-10-20 | 2013-08-28 | 3M Innovative Properties Company | Film de miroir semi-spéculaire à large bande incorporant une couche polymère à nanovides |
| DE102012217643A1 (de) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| TW201616689A (zh) * | 2014-06-25 | 2016-05-01 | 皇家飛利浦有限公司 | 經封裝之波長轉換發光裝置 |
| US20170306221A1 (en) * | 2014-09-23 | 2017-10-26 | Philips Lighting Holding B.V. | Encapsulated materials in porous particles |
| US9774010B2 (en) * | 2014-10-21 | 2017-09-26 | Panasonic Intellectual Property Management Co., Ltd. | Light reflective material and light-emitting device |
| BR102016004795B1 (pt) * | 2015-03-05 | 2021-09-08 | Nichia Corporation | Diodo emissor de luz |
-
2018
- 2018-12-17 WO PCT/US2018/065937 patent/WO2019126000A1/fr not_active Ceased
- 2018-12-17 JP JP2020534969A patent/JP7224355B2/ja active Active
- 2018-12-17 KR KR1020207021173A patent/KR102440864B1/ko active Active
- 2018-12-17 CN CN201880090105.7A patent/CN111712936B/zh active Active
- 2018-12-17 EP EP18827330.4A patent/EP3729526A1/fr active Pending
- 2018-12-22 TW TW107146682A patent/TWI706165B/zh active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009043903A (ja) | 2007-08-08 | 2009-02-26 | Stanley Electric Co Ltd | Ｌｅｄ光源 |
| JP2011510487A (ja) | 2008-01-15 | 2011-03-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Ｌｅｄ用の光学セラミックにおける、制御された多孔による光の散乱 |
| JP2010211027A (ja) | 2009-03-11 | 2010-09-24 | Dic Corp | モアレ縞抑制フィルム、及びモアレ縞抑制機能付きプリズムシート |
| JP2013529842A (ja) | 2010-08-20 | 2013-07-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品および散乱体 |
| US20130207148A1 (en) | 2010-08-20 | 2013-08-15 | Osram Gmbh | Radiation-emitting component with a converter material, with a thermally conductive contact and method for the production thereof |
| JP2014010894A (ja) | 2012-06-27 | 2014-01-20 | Okano Electric Wire Co Ltd | Ｌｅｄ照明装置 |
| JP2016037483A (ja) | 2014-08-11 | 2016-03-22 | シャープ株式会社 | 二核錯体およびそれを用いた発光素子、色変換基板、電子機器 |
| JP2017531315A (ja) | 2014-09-03 | 2017-10-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | オプトエレクトロニクス半導体デバイス、及び、フラッシュライト |
| JP2016081040A (ja) | 2014-10-21 | 2016-05-16 | パナソニックＩｐマネジメント株式会社 | 光反射材料、ならびに光反射材料を用いた発光装置 |
| JP2017188686A (ja) | 2016-04-04 | 2017-10-12 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
| JP2017191875A (ja) | 2016-04-14 | 2017-10-19 | 株式会社小糸製作所 | 発光モジュール |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI706165B (zh) | 2020-10-01 |
| KR102440864B1 (ko) | 2022-09-07 |
| CN111712936B (zh) | 2023-10-20 |
| CN111712936A (zh) | 2020-09-25 |
| JP2021508179A (ja) | 2021-02-25 |
| WO2019126000A1 (fr) | 2019-06-27 |
| TW201937205A (zh) | 2019-09-16 |
| KR20200099190A (ko) | 2020-08-21 |
| EP3729526A1 (fr) | 2020-10-28 |
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