JP7088791B2 - Plasma treatment device - Google Patents

Description

The present invention relates to a plasma therapy apparatus.

Conventionally, in medical applications such as dental treatment, a plasma type treatment device for irradiating an affected area with plasma or an active gas containing an active species generated by plasma to heal a wound or the like is known. Examples of such a plasma type treatment device include a plasma jet irradiation device and an active gas irradiation device.

For example, Patent Document 1 discloses a dental medical treatment device (plasma jet irradiation device) in which a plasma jet irradiation means is mounted on an irradiation device for performing dental treatment and plasma jet irradiation is possible on a treated area. Such a plasma jet irradiation device used as a dental medical care device generates plasma and directly irradiates the irradiated body with the generated plasma and the active species generated by reacting with the gas in or around the plasma. It is a thing. Examples of the active species include active oxygen species such as hydroxyl radical, singlet oxygen, ozone, hydrogen peroxide, and superoxide anion radical, nitric oxide, nitrogen dioxide, peroxynitrite, nitrite peroxide, and dinitrogen trioxide. Examples include active nitrogen species.
According to the invention described in Patent Document 1, the wounds and the like are healed by directly irradiating the affected area with the generated plasma.

Further, Patent Document 2 discloses an active gas irradiating device that generates an active gas (active species) inside an irradiation device and discharges the active gas from a nozzle to irradiate the affected area. Such an active gas is, for example, active oxygen, active nitrogen, or the like.
According to the invention described in Patent Document 2, the wound and the like are healed by directly irradiating the affected area with the generated active gas as described above.

Japanese Patent No. 5441066 JP-A-2017-050267

Here, in the plasma type treatment device, in order to enhance the effect of wound healing and the like, it is required to irradiate the surface of the irradiated body with plasma or an active gas at a flow rate of a predetermined value or more and in a wide range. .. Further, it is known that the therapeutic effect of plasma depends on the plasma density which changes depending on the relationship between the flow velocity of plasma or active gas and time, and from this viewpoint, the flow velocity of plasma or active gas should be kept constant. Is also required.

As described above, in order to irradiate a wide range of the surface of the irradiated body with plasma or active gas, for example, as shown in the reference diagram of FIG. 6, a method of providing a member for expanding the irradiation angle at the tip of the nozzle is available. (See, for example, reference numeral 60 shown in FIG. 6). Further, when such a member is used, the opening area where the plasma or the active gas is discharged changes, so that when the flow rate of the plasma or the active gas is constant, the flow velocity thereof also changes. For example, when the flow rate of the plasma or the active gas is constant and the opening area is increased, the flow velocity of the plasma or the active gas becomes low.

On the other hand, since the life of the active species contained in the active gas is very short, the flow velocity of the plasma or the active gas is maintained above a certain level in order to enhance the therapeutic effect as much as possible within the range of the short life of the active species. Is required to do. However, as described above, when a member having a large opening area for discharging plasma or active gas is simply adopted for the purpose of expanding the irradiation angle, the flow velocity of plasma or active gas decreases, and the therapeutic effect is achieved. May decrease.

The present invention has been made in view of the above problems, and the treatment is performed under optimum irradiation conditions without reducing the flow velocity of the plasma or the active gas while expanding the irradiation area of the plasma or the active gas on the irradiated object. It is an object of the present invention to provide a plasma type treatment apparatus capable of capable.

In order to solve the above problems, the present invention has the following aspects.
[1] An irradiation device having a plasma generating unit in which plasma is generated and a nozzle having a discharge port for discharging one or both of the plasma and the active gas generated by the plasma is provided, and further, from the nozzle. A removable cartridge having an opening for irradiating the irradiated body with the discharged plasma or the active gas while expanding the irradiation area for the irradiated body, and adjusting the flow rate of the plasma or the active gas. A control unit is provided, and the control unit adjusts the flow rate of the plasma or the active gas according to the opening area of the opening in the cartridge toward the irradiated body from the opening. A plasma-type treatment device that constantly controls the flow velocity of the plasma or the active gas to be irradiated.
[2] The plasma type according to the above [1], wherein the control unit further has a selection means for selecting a flow rate of the plasma or the active gas according to the opening area of the opening provided in the cartridge. Treatment device.
[3] The irradiation device further includes an identification means for identifying the opening area information of the opening provided in the cartridge, and the control unit is based on the opening area information identified by the identification means. The plasma type treatment apparatus according to the above [1], which adjusts the flow rate of plasma or the active gas.
[4] The plasma-type treatment apparatus according to any one of the above [1] to [3], wherein the cartridge has a horn shape in which the inner diameter gradually expands toward the tip side provided with the opening.
[5] The plasma-type treatment apparatus according to any one of [1] to [3] above, wherein the cartridge has a shower shape in which the opening has a plurality of opening holes provided on the tip surface.
[6] In the cartridge, the opening is provided so as to communicate with a plurality of opening holes provided on the tip surface and the plurality of opening holes, and the plasma or the active gas is provided in the plurality of opening holes. The plasma type treatment apparatus according to any one of the above [1] to [3], which has an expanded flow path for introducing the gas.
[7] In the cartridge, the opening is provided so as to communicate with a plurality of opening holes provided on the outer peripheral surface and the plurality of opening holes, and the plasma or the active gas is applied to the plurality of opening holes. The plasma type treatment apparatus according to any one of the above [1] to [3], which has an expanded flow path to be introduced.
[8] The cartridge further has a switching means for switching the opening area of the opening, and the control unit may use the plasma or the active gas according to the opening area of the opening to be switched in the cartridge. The plasma type treatment device according to the above [1], which adjusts the flow rate.
[9] The cartridge has an outer panel having an opening rotatably provided in the axial direction of the cartridge and having a plurality of first opening holes, and the plasma or the active gas rather than the outer panel. An inner panel fixed to the inner wall side of the cartridge and having a plurality of second opening holes is provided on the upstream side in the flow direction, and is provided on the outer panel when the outer panel is rotated. The first opening hole and the second opening hole provided in the inner panel communicate with each other, or the region in the outer panel where the first opening hole is not formed causes the said in the inner panel. The plasma type treatment apparatus according to the above [8], wherein the opening area of the opening is switched by closing at least a part of the second opening.
[10] The cartridge further includes a rotation position detecting means of the outer panel, and the rotation position detecting means of the outer panel when the outer panel is rotated to switch the opening area of the opening. The position information is transmitted to the control unit, and the control unit calculates the opening area in the opening based on the position information of the outer panel, and adjusts the flow rate of the plasma or the active gas based on the calculation result. The plasma type treatment apparatus according to the above [9].
[11] The cartridge further includes a switching mechanism for switching the opening area of the opening by electrically or mechanically rotating the outer panel, and the irradiation device has the opening switched by the switching mechanism. The plasma type treatment apparatus according to the above [9] or [10], which comprises an opening area setting means for setting the opening area of the above.
[12] The plasma-type treatment apparatus according to the above [11], wherein the opening area setting means is provided in the nozzle.

In the present specification, the “active gas” refers to a gas having high chemical activity including any of active species such as radicals, excited atoms / molecules, and ions.

Further, in the present specification, the "opening area" of the opening provided in the cartridge means the area in which the inside and the outside of the cartridge communicate with each other in the opening on the tip end side of the cartridge.

According to the plasma type treatment apparatus of the present invention, by adopting the above configuration, in order to increase the irradiation area of plasma or active gas on the irradiated object, plasma or even when a cartridge having a large opening area is provided. It is possible to set the optimum irradiation conditions and perform treatment with a simple operation without reducing the flow velocity of the active gas. Therefore, it is possible to realize a plasma-type treatment device having an enhanced effect such as wound healing and excellent operability.

It is a schematic diagram which shows the plasma type therapy apparatus which concerns on one Embodiment of this invention. It is a partial cross-sectional view of the irradiation apparatus provided in the plasma type treatment apparatus which concerns on one Embodiment of this invention. It is xx cross-sectional view of the irradiation apparatus shown in FIG. It is a block diagram which shows the schematic structure of the plasma type therapy apparatus which concerns on one Embodiment of this invention. It is a reference figure explaining the operation of the plasma type treatment apparatus which concerns on this invention. It is a reference figure explaining the operation of the plasma type treatment apparatus which concerns on this invention. It is a schematic diagram which shows the plasma type therapy apparatus which concerns on one Embodiment of this invention, and is the partial breakage figure which shows an example of a cartridge. It is a schematic diagram which shows the plasma type therapy apparatus which concerns on one Embodiment of this invention, and is the partial fracture | figure which shows the other example of a cartridge. It is a schematic diagram which shows the plasma type therapy apparatus which concerns on one Embodiment of this invention, and is the partial fracture | figure which shows the other example of a cartridge. It is a schematic diagram which shows the plasma type therapy apparatus which concerns on one Embodiment of this invention, and is the partial fracture | figure which shows the other example of a cartridge. It is a schematic diagram which shows the plasma type therapy apparatus which concerns on one Embodiment of this invention, and is the partial fracture | figure which shows the other example of a cartridge.

Hereinafter, embodiments of the plasma-type treatment apparatus of the present invention will be described, and the configuration thereof will be described in detail with reference to FIGS. 1 to 11 as appropriate. In addition, in each drawing used in the following description, in order to make it easy to understand the characteristics of the plasma type treatment apparatus of the present invention, the characteristic portion may be enlarged for convenience, and the dimensional ratio of each component may be shown. May differ from the actual one. Further, the materials, dimensions, etc. exemplified in the following description are examples, and the present invention is not limited thereto, and the present invention can be appropriately modified without changing the gist thereof.

The plasma-type treatment apparatus according to the present invention comprises an irradiation device having a plasma generating portion in which plasma is generated and a nozzle having a discharge port for discharging either or both of the plasma and the active gas generated by the plasma. Be prepared. Further, the plasma type treatment apparatus according to the present invention includes a removable cartridge having an opening for irradiating the irradiated body with plasma or active gas discharged from the nozzle while expanding the irradiation area for the irradiated body. A control unit for adjusting the flow rate of plasma or active gas is provided. Then, in the plasma type treatment apparatus according to the present invention, the control unit is irradiated from the opening toward the irradiated body by adjusting the flow rate of plasma or active gas according to the opening area of the opening in the cartridge. It is roughly configured to control the flow velocity of the plasma or active gas to be constant.
The plasma-type treatment device of the present invention may be a plasma jet irradiation device or an active gas irradiation device as long as it includes an irradiation device having a plasma generating unit and a nozzle and a cartridge.

The plasma jet irradiator generates plasma. The plasma jet irradiation device directly irradiates the irradiated object with the generated plasma and the active species. The active species is produced by the reaction between the gas in the plasma or the gas around the plasma and the plasma. Examples of the active species include active oxygen species and active nitrogen species. Examples of the active oxygen species include hydroxyl radical, singlet oxygen, ozone, hydrogen peroxide, superoxide anion radical and the like. Examples of the active nitrogen species include nitric oxide, nitrogen dioxide, peroxynitrite, nitrite peroxide, and dinitrogen trioxide.
The active gas irradiation device generates plasma. The active gas irradiation device irradiates the irradiated body with an active gas containing an active species. The active species is produced by the reaction between the gas in the plasma or the gas around the plasma and the plasma.

<First embodiment>
Hereinafter, the first embodiment of the plasma type treatment apparatus of the present invention will be described mainly with reference to FIGS. 1 to 9.
The plasma type treatment device of this embodiment is an active gas irradiation device.

[Configuration of plasma treatment device]
As shown in FIG. 1, the plasma type treatment device 100 includes an irradiation device (instrument) 10, a supply unit 20, a gas pipeline 30, and an electrical wiring 40. A cartridge 61 is attached to the tip of the nozzle 1 included in the irradiation device 10.
The irradiation device 10 discharges the active gas generated in the irradiation device 10. The supply unit 20 supplies electricity and plasma generating gas to the irradiation device 10.
The gas pipeline 30 connects the irradiation device 10 and the supply unit 20. The electrical wiring 40 electrically connects the irradiation device 10 and the supply unit 20.
In the illustrated example, the gas pipeline 30 and the electric wiring 40 are independent of each other, but the gas pipeline 30 and the electric wiring 40 may be integrally configured.

(Irradiation equipment)
FIG. 2 is a partial cross-sectional view showing a cross section of the irradiation device 10 along the axis. FIG. 3 is a cross-sectional view taken along the line xx of the irradiation device 10 shown in FIG.
The irradiation device 10 includes a long cowling 2, a nozzle 1 protruding from the tip of the cowling 2, a plasma generating unit 12 located in the cowling 2, and an operation switch 9 (operation) provided on the outer peripheral surface of the cowling 2. Part) and. Further, as described above, a cartridge 61, which will be described in detail later, is fixed to the tip of the nozzle 1.

The cowling 2 includes a body portion 2b and a head portion 2a that closes the tip of the body portion 2b.
The body portion 2b is a cylindrical member extending in the pipe axis O1 direction. The body portion 2b is not limited to a cylindrical shape, and may be a polygonal cylinder such as a square cylinder, a hexagonal cylinder, or an octagonal cylinder.

The material of the body portion 2b is not particularly limited, but a material having electrical insulation is preferable from the viewpoint of preventing electric shock. The body portion 2b may be formed of only an electrically insulating material, or may have a multilayer structure having an electrically insulating material and a layer of a metal material on the surface thereof.
Examples of the electrically insulating material include thermoplastic resins and thermosetting resins. Examples of the thermoplastic resin include polyethylene, polypropylene, polyvinyl chloride, polystyrene, acrylonitrile-butadiene-styrene resin (ABS resin) and the like. Examples of the thermosetting resin include phenol resin, melamine resin, urea resin, epoxy resin, unsaturated polyester resin, and silicon resin.
Further, as the metal material, aluminum, copper, iron, stainless steel and the like can be exemplified.
The size of the body portion 2b is not particularly limited, and can be a size that can be easily grasped by fingers.

The head portion 2a is formed so as to gradually narrow toward the tip. That is, the head portion 2a in the present embodiment has a conical shape. The head portion 2a is not limited to a conical shape, and may be a polygonal pyramid shape such as a square weight, a hexagonal weight, or an octagonal weight.
A fitting hole 2c into which the nozzle 1 is inserted is formed at the tip of the head portion 2a. The nozzle 1 is detachably provided on the head portion 2a. In FIG. 2, reference numeral O1 is a tube axis of the body portion 2b. Inside the head portion 2a, a first active gas flow path 7 extending in the direction of the pipe axis O1 is formed.
An operation switch 9 is provided on the outer peripheral surface of the body portion 2b.

The material of the head portion 2a is not particularly limited and may or may not have an insulating property. The material of the head portion 2a is preferably a material having excellent wear resistance and corrosion resistance. Examples of the material having excellent wear resistance and corrosion resistance include metals such as stainless steel. The materials of the head portion 2a and the body portion 2b may be the same or different.
The size of the head portion 2a is determined in consideration of the application of the plasma type treatment device 100 and the like. For example, when the plasma type treatment device 100 is an oral treatment instrument, the size of the head portion 2a is preferably a size that can be inserted into the oral cavity.

The nozzle 1 includes a pedestal portion 1b that fits into the fitting hole 2c, and an irradiation tube 1c that protrudes from the pedestal portion 1b. The pedestal portion 1b and the irradiation tube 1c are integrally formed. A second active gas flow path 8 is formed inside the nozzle 1, and a discharge port 1a is formed at the tip thereof. The second active gas flow path 8 and the first active gas flow path 7 communicate with each other.

The material of the nozzle 1 is not particularly limited, but may or may not have an insulating property. The material of the nozzle 1 is preferably a material having excellent wear resistance and corrosion resistance. Examples of the material having excellent wear resistance and corrosion resistance include metals such as stainless steel.
Further, as the nozzle 1, for example, a disposable type material may be used from the viewpoint of hygiene.

The length of the flow path in the irradiation tube 1c (that is, the distance L2) in the nozzle 1 can be appropriately determined in consideration of the application of the plasma type treatment device 100 and the like.
The opening diameter of the discharge port 1a is preferably 0.5 to 5 mm, for example. When the opening diameter is at least the above lower limit value, the pressure loss of the active gas can be suppressed. When the opening diameter is not more than the above upper limit value, the flow velocity of the irradiated active gas can be increased to further promote healing and the like.
The irradiation tube 1c is bent with respect to the tube axis O1.
The angle θ formed by the tube axis O2 and the tube axis O1 of the irradiation tube 1c can be determined in consideration of the application of the plasma type treatment device 100 and the like.

As shown in FIGS. 2 and 3, the plasma generating unit 12 includes a tubular dielectric 3, an internal electrode 4, and an external electrode 5.
As shown in FIG. 3, the tubular dielectric 3, the internal electrode 4, and the external electrode 5 are located concentrically with the tube axis O1 as the center.
In the present embodiment, the outer peripheral surface of the internal electrode 4 and the inner peripheral surface of the external electrode 5 face each other with the tubular dielectric 3 interposed therebetween.

The tubular dielectric 3 is a cylindrical member extending in the direction of the tube axis O1. Inside the tubular dielectric 3, a gas flow path 6 extending in the direction of the tube axis O1 is formed. The first active gas flow path 7 and the gas flow path 6 communicate with each other. The tube shaft O1 is the same as the tube shaft of the tubular dielectric 3.

As the material of the tubular dielectric 3, a dielectric material used in a known plasma device can be applied. Examples of the material of the tubular dielectric 3 include glass, ceramics, synthetic resin and the like. The lower the dielectric constant of the tubular dielectric 3, the more preferable.

The inner diameter R of the tubular dielectric 3 is appropriately determined in consideration of the outer diameter d of the internal electrode 4. The inner diameter R is determined so that the distance s described later is within a desired range.

The internal electrode 4 is a substantially columnar member extending in the direction of the tube axis O1. The internal electrode 4 is located inside the tubular dielectric 3 and is separated from the inner surface of the tubular dielectric 3.
The internal electrode 4 includes a shaft portion extending in the direction of the tube shaft O1 and a thread on the outer peripheral surface of the shaft portion. The shaft portion may be solid or hollow. The shaft portion is preferably solid. If the shaft is solid, it is easy to process and the mechanical durability can be improved. The thread of the internal electrode 4 is a spiral thread that orbits in the circumferential direction of the shaft portion. The form of the internal electrode 4 is the same as that of the male screw.
Since the internal electrode 4 has a thread on the outer peripheral surface, the electric field at the tip of the thread is locally strengthened, and the discharge start voltage is lowered. Therefore, plasma can be generated and maintained with low power consumption.
The internal electrode 4 does not have to have irregularities such as threads on the outer peripheral surface. That is, the internal electrode 4 may be a cylindrical member having no unevenness on the outer peripheral surface.

The outer diameter d of the internal electrode 4 is appropriately determined in consideration of the application of the plasma type treatment device 100 (that is, the size of the irradiation device 10) and the like. When the plasma type treatment device 100 is an oral treatment instrument, the outer diameter d is preferably 0.5 to 20 mm, more preferably 1 to 10 mm. When the outer diameter d is at least the above lower limit value, the internal electrode can be easily manufactured. In addition, when the outer diameter d is at least the above lower limit value, the surface area becomes large, plasma can be generated more efficiently, and healing or the like can be further promoted. When the outer diameter d is not more than the above upper limit value, plasma can be generated more efficiently and healing or the like can be further promoted without making the irradiation device 10 excessively large.

The height h of the thread of the internal electrode 4 can be appropriately determined in consideration of the outer diameter d of the internal electrode 4.
The pitch p of the thread of the internal electrode 4 can be appropriately determined in consideration of the length of the internal electrode 4, the outer diameter d, and the like. The pitch p is preferably 0.2 to 3.0 mm, more preferably 0.2 to 2.5 mm, and even more preferably 0.2 to 2.0 mm.

The material of the internal electrode 4 is not particularly limited as long as it is a conductive material, and a metal used for an electrode of a known plasma device can be applied. Examples of the material of the internal electrode 4 include metals such as stainless steel, copper, and tungsten: and carbon.

As the internal electrode 4, JIS B 0205: 2001 metric screw standard product (M2, M2.2, M2.5, M3, M3.5, etc.) and JIS B 2016: 1987 metric trapezoidal screw standard product (Tr8). × 1.5, Tr9 × 2, Tr9 × 1.5, etc.), JIS B 0206: 1973 unified coarse thread standard products (No. 1-64 UNC, No. 2-56 UNC, No. 3-48 UNC, etc.) The same specifications as the above are preferable. If the specifications are equivalent to those of these standard products, it is advantageous in terms of cost.

The distance s between the outer surface (top of the thread) of the internal electrode 4 and the inner surface of the tubular dielectric 3 is preferably 0.05 to 5 mm, more preferably 0.1 to 1 mm. When the distance s is equal to or greater than the above lower limit value, a desired amount of gas can be easily passed. When the distance s is equal to or less than the above upper limit value, plasma can be generated more efficiently and the temperature of the active gas can be lowered.

The external electrode 5 is an annular electrode that orbits along the outer peripheral surface of the tubular dielectric 3. The external electrode 5 exists on a part of the outer peripheral surface of the tubular dielectric 3.

The material of the external electrode 5 is not particularly limited as long as it is a conductive material, and a metal used for an electrode of a known plasma device can be applied. Examples of the material of the external electrode 5 include metals such as stainless steel, copper and tungsten, carbon and the like.

The total of the distance L1 from the tip center point Q1 of the internal electrode 4 to the tip Q2 of the head portion 2a and the distance L2 from the tip Q2 to the discharge port 1a (that is, the distance from the internal electrode 4 to the discharge port 1a) is It is appropriately determined in consideration of the size of the plasma type treatment device 100, the temperature on the surface irradiated with the active gas (the surface of the irradiated body), and the like. If the sum of the distance L1 and the distance L2 is long, the temperature of the surface of the irradiated body can be lowered. When the sum of the distance L1 and the distance L2 is short, the radical density of the active gas can be further increased, and the effects of purification, activation, healing and the like on the surface of the irradiated body can be further enhanced. The tip Q2 is an intersection of the pipe shaft O1 and the pipe shaft O2.
The temperature of the irradiated surface is measured by, for example, a thermocouple or a thermography.

The operation switch 9 transmits an electric signal for starting the discharge of the active gas from the nozzle 1 by being operated by the user.
The operation switch 9 is, for example, a push button. When the operation switch 9 is a push button, the operation switch 9 may have a configuration in which an electric signal is transmitted only once when the user presses the push button once, and the user keeps pressing the push button. It may have a configuration in which an electric signal is continuously transmitted for a period of time.

(Supply unit)
FIG. 4 is a block diagram showing a schematic configuration of the plasma type treatment device (active gas irradiation device) 100 of the present embodiment.
The supply unit 20 includes a gas supply source 70, a control unit 90, a power supply unit (not shown), and a housing 21 for accommodating these.
The housing 21 accommodates the supply source 70 in a detachable manner. As a result, when the gas in the supply source 70 housed in the housing 21 runs out, the supply source 70 can be replaced.
In the present embodiment, a plurality of supply units 20 may be provided to supply two or more different types or the same type of gas to the irradiation device 10.

The power supply unit (not shown) supplies electricity to each component in the operation switch 9, the plasma generation unit 12, and the supply unit 20 of the irradiation device 10.
The feeding unit can adjust the voltage and frequency applied between the internal electrode 4 and the external electrode 5 of the plasma generating unit 12.
The power feeding unit is connected to, for example, a power source (not shown) such as a 100V household power source.

The supply source 70 supplies the plasma generation gas to the plasma generation unit 12. The supply source 70 is a pressure-resistant container in which a gas for plasma generation is housed. As shown in FIG. 4, the supply source 70 is detachably attached to the pipe 75 arranged in the housing 21. The pipe 75 connects the supply source 70 and the gas pipe line 30.
A solenoid valve 71, a pressure regulator 73, a flow rate controller 74, and a pressure sensor 72 (remaining amount sensor) are attached to the pipe 75.

When the solenoid valve 71 is opened, plasma generation gas is supplied from the supply source 70 to the irradiation device 10 via the pipe 75 and the gas pipeline 30. In the illustrated example, the solenoid valve 71 does not have a configuration in which the valve opening degree can be adjusted, but has a configuration in which only opening and closing can be switched. The solenoid valve 71 may have a configuration in which the valve opening degree can be adjusted.

The pressure regulator 73 is arranged between the solenoid valve 71 and the supply source 70. The pressure regulator 73 reduces the pressure of the plasma generating gas (reducing the plasma generating gas) from the supply source 70 toward the solenoid valve 71.

The flow rate controller 74 is arranged between the solenoid valve 71 and the gas pipeline 30. The flow rate controller 74 adjusts the flow rate (supply amount per unit time) of the plasma generating gas that has passed through the solenoid valve 71. The flow rate controller 74 adjusts the flow rate of the plasma generating gas to, for example, 3 L / min.
The flow rate controller 74 is arranged between the solenoid valve 71 and the gas pipeline 30. The flow rate controller 74 adjusts the flow rate (supply amount per unit time) of the plasma generating gas that has passed through the solenoid valve 71. The flow rate controller 74 adjusts the flow rate of the plasma generating gas to, for example, 3 L / min.

The pressure sensor 72 detects the remaining amount V1 of the plasma generating gas in the supply source 70. The pressure sensor 72 measures the pressure (residual pressure) in the supply source 70 as the remaining amount V1. The pressure sensor 72 measures the pressure (primary pressure) of the plasma generating gas passing between the pressure regulator 73 and the supply source 70 (primary side of the pressure regulator 73) as the pressure of the supply source 70. As the pressure sensor 72, for example, Keyence's AP-V80 series (specifically, for example, AP-15S) or the like can be adopted.

A joint 76 is provided at the end of the pipe 75 on the supply source 70 side. A supply source 70 is detachably attached to the joint 76. By attaching and detaching the supply source 70 to the joint 76, the solenoid valve 71, the pressure regulator 73, the flow controller 74, and the pressure sensor 72 (hereinafter referred to as “solenoid valve 71, etc.”) are fixed to the housing 21 and the supply source is maintained. The 70 can be replaced.
In this case, a common solenoid valve 71 or the like can be used for both the supply source 70 before replacement and the supply source 70 after replacement. The solenoid valve 71 or the like may be fixed to the supply source 70 and may be integrally detachable from the housing 21 together with the supply source 70.

The control unit 90 is configured by using, for example, an information processing device. That is, the control unit 90 includes a CPU (Central Processor Unit) connected by a bus, a memory, and an auxiliary storage device. The control unit 90 operates by executing a program. The control unit 90 may be built in, for example, the supply unit 20. The control unit 90 controls the irradiation device 10 and the supply unit 20.
The solenoid valve 71, the pressure sensor 72, the flow rate controller 74, and the operation switch 9 of the irradiation device 10 are electrically connected to the control unit 90.
The control unit 90 controls the solenoid valve 71 and the flow rate controller 74.

The operation switch 9 of the irradiation device 10 is electrically connected to the control unit 90 via the electric wiring 40. When the user operates the operation switch 9, an electric signal is sent from the operation switch 9 to the control unit 90. When the control unit 90 receives the electric signal from the operation switch 9, the control unit 90 operates the solenoid valve 71 and the flow rate controller 74.

Although details will be described with the cartridge described later, the control unit 90 provided in the plasma type treatment apparatus 100 of the present embodiment adjusts the flow rate of plasma or active gas according to the opening area of the opening in the cartridge. Thereby, it has a function of controlling the flow velocity of the plasma or the active gas irradiated from the opening toward the irradiated body to be constant.

When the operation switch 9 is a push button and the user transmits an electric signal only once when the push button is pressed, the control unit 90 sets the solenoid valve 71 and the flow rate controller 74, for example, as follows. Control.
When the control unit 90 receives the electric signal from the operation switch 9, the control unit 90 opens the solenoid valve 71 for a predetermined time and causes the flow controller 74 to adjust the flow rate of the plasma generating gas that has passed through the solenoid valve 71. Further, the control unit 90 applies a voltage between the internal electrode 4 and the external electrode 5 for a predetermined time. As a result, a certain amount of plasma generating gas is supplied from the supply source 70 to the plasma generating unit 12, and the active gas is continuously discharged from the nozzle 1 for a predetermined time (for example, about several seconds to several tens of seconds).

When the operation switch 9 is a push button and the user keeps pressing the push button while continuously transmitting an electric signal, the control unit 90 uses, for example, the solenoid valve 71, the flow rate controller 74, and the figure as shown below. Controls the abbreviated power supply unit.
While the control unit 90 receives the electric signal from the operation switch 9, the control unit 90 opens the solenoid valve 71 and causes the flow controller 74 to adjust the flow rate of the plasma generating gas that has passed through the solenoid valve 71. Further, the control unit 90 applies a voltage between the internal electrode 4 and the external electrode 5. As a result, while the user keeps pressing the operation switch 9, the plasma generation gas is supplied from the supply source 70 to the plasma generation unit 12, and the active gas is continuously discharged from the nozzle 1.

(Gas pipeline)
The gas pipeline 30 is a path for supplying plasma generation gas from the supply unit 20 to the irradiation device 10. The gas pipeline 30 is connected to the rear end of the tubular dielectric 3 of the irradiation device 10. The material of the gas pipe line 30 is not particularly limited, and a known material used for the gas pipe can be applied. As the material of the gas pipeline 30, for example, a resin pipe, a rubber tube, or the like can be exemplified, and a flexible material is preferable.

(Electric wiring)
The electrical wiring 40 electrically connects the wiring for supplying electricity from the feeding unit of the supply unit 20 to the plasma generating unit 12 of the irradiation device 10, and the operation switch 9 of the irradiation device 10 and the control unit 90 of the supply unit 20. Equipped with wiring.
The electrical wiring 40 is connected to the internal electrode 4, the external electrode 5, and the operation switch 9 of the irradiation device 10. The material of the electric wiring 40 is not particularly limited, and a known material used for the electric wiring can be applied. As the material of the electric wiring 40, a metal conductor or the like coated with an insulating material can be exemplified.

(cartridge)
In the plasma type treatment apparatus according to the present invention, the cartridge 61 is attached to the irradiation device 10. In the example shown in FIGS. 1 and 2, the cartridge 61 having a horn shape in which the inner diameter gradually increases toward the tip side provided with the opening 61a, as shown in the enlarged view in the fracture view of FIG. 7, is used. It is detachably attached so as to be press-fitted into the tip of the nozzle 1.
The cartridge in the present embodiment may be, for example, a structure that can be washed and used repeatedly, or may be a disposable type. Examples of the method for cleaning the cartridge include a cleaning method using an autoclave as well as a cleaning method using ethanol.

Here, the operation of the cartridge used in the plasma type treatment apparatus according to the present invention will be described with reference to the reference drawings of FIGS. 5 and 6.
As shown in the reference diagram of FIG. 5, in the conventional plasma type treatment apparatus, there are many cases where plasma or an active gas is directly irradiated from the nozzle 1 to the surface of the irradiated body H. Further, the irradiation angle of the plasma or the active gas in this case depends on the opening area obtained from the inner diameter W1 of the nozzle 1. As shown in FIG. 5, when plasma or an active gas is directly irradiated from a nozzle 1 having a linear flow path, the irradiation width is as narrow as W2, and there is no large difference from the inner diameter W1 of the nozzle 1. Therefore, as shown in the reference diagram of FIG. 6, a cartridge 60 for expanding the irradiation area of plasma or active gas on the irradiated body H is used for the purpose of expanding the irradiation range and improving the therapeutic effect. Can be considered. On the other hand, when the cartridge as described above is used, the opening area for discharging the plasma or the active gas becomes large. Therefore, when the flow rate of the plasma or the active gas is constant, the flow velocity of the plasma or the active gas becomes low. In the plasma type treatment apparatus according to the present invention, in order to expand the irradiation range of the plasma or the active gas to the irradiated body H, the flow velocity of the plasma or the active gas is reduced even when a cartridge having a large opening area is provided. Optimal irradiation conditions can be set with a simple operation.

That is, in the cartridge 61 shown in FIG. 7, the irradiation angle α of the plasma or active gas discharged from the discharge port 1a of the nozzle 1 is expanded with respect to the irradiated body H, and the irradiation area of the irradiated body H is increased. While expanding, irradiation is performed from the opening 61a toward the irradiated body H. By adopting such a cartridge 61 having a horn shape, plasma or an active gas diffuses along the inner wall of the horn shape, so that the plasma or active gas can be effectively expanded while the irradiation area for the irradiated body H is effectively expanded. It becomes possible to irradiate the irradiated body H with the active gas. As a result, the surface of the irradiated body H can be stably irradiated with plasma or an active gas over a wide area, and the therapeutic effect can be improved and the efficiency can be improved.

As described above, in the plasma type treatment apparatus 100 of the present embodiment, the control unit 90 adjusts the flow rate of the plasma or the active gas according to the opening area of the opening 61a in the cartridge 61 from the opening 61a. The flow velocity of the plasma or active gas irradiated toward the irradiated body H is controlled to be constant.
Specifically, although detailed illustration is omitted, for example, a button (not shown) in which the control unit 90 selects the flow rate of plasma or active gas according to the opening area of the opening 61a provided in the cartridge, or the like. A configuration having a selection means can be adopted. Thereby, in order to expand the irradiation range (irradiation area) of the plasma or the active gas to the irradiated body H, the flow rate of the plasma or the active gas is increased even when the opening area at the opening of the cartridge is made large. Therefore, the treatment can be performed under the optimum irradiation conditions without reducing the flow velocity of the plasma or the active gas. That is, the therapeutic effect is further enhanced by irradiating a wide area of the surface of the irradiated body H with an active gas (and plasma) containing an active species having a short life at a flow rate of a certain level or higher to secure a predetermined flow rate.

Here, in the control unit 90 described above, the means for adjusting the flow rate of the plasma or the active gas is not limited to the configuration using the selection button as described above. For example, in the irradiation apparatus 10, further, a visual identification means for identifying the opening area information of the opening provided in the cartridge is provided, and the control unit 90 is based on the opening area information identified by the above-mentioned identification means. A configuration for adjusting the flow rate of the plasma or the active gas may be adopted.
Specifically, for example, the cartridge is provided with a concavo-convex shape that differs depending on the opening area information of the opening, and the irradiation device 10 is provided with a switching lever (not shown). A configuration that can be moved as appropriate may be adopted. In this case, the opening area information switched by the switching lever is transmitted to the control unit 90, so that the flow rate of the plasma or the active gas is switched to a predetermined flow rate, and the flow velocity above a certain level is maintained.
By adopting the above configuration, when the cartridge is replaced, the operation of switching the flow rate by the selection button or the like can be omitted, so that a plasma type treatment device having excellent operability can be realized.

Alternatively, for example, a microchip having a drawing diagram for identifying the opening area information of the opening is embedded in the cartridge, a reading means for drawing the drawing is provided in the irradiation device 10, and the opening stored in the microchip when the cartridge is attached. A configuration may be adopted in which the area information is identified by the reading means. In this case, the opening area information read by the reading means of the irradiation device 10 is transmitted to the control unit 90, and the flow rate of the plasma or the active gas is switched to a predetermined flow rate, so that the flow velocity above a certain level is maintained. ..
Alternatively, instead of the above-mentioned identification means using a microchip, for example, an identification means using a barcode or the like may be adopted.

Here, the preferable range of the flow velocity of the plasma or the active gas described in the present embodiment can be appropriately set according to the size of the site to be treated, the type of disease, and the like, and is, for example, approximately 10 m / sec. The flow velocity is about 200 m / sec.

The shape of the cartridge is not limited to the horn shape shown in FIG. 7.
For example, as in the cartridge 62 of the example shown in FIG. 8, the opening 62a may have a shower shape having a plurality of opening holes 62b provided on the tip surface. By adopting the shower-shaped cartridge 62 provided with the openings 62a composed of the plurality of opening holes 62b as described above, the overall opening area increases according to the number of opening holes 62b, so that the irradiated body It becomes possible to irradiate the irradiated body with plasma or active gas from the opening 62a while effectively expanding the irradiation area with respect to H.

Further, as in the cartridge 63 of the example shown in FIG. 9, the opening 63a is provided so as to communicate with the plurality of opening holes 63b provided on the tip surface and the plurality of opening holes 63b, and the plurality of opening holes are provided. A configuration having an expanded flow path 63c for supplying plasma or an active gas to 63b may be adopted. By attaching the cartridge 63 shown in FIG. 9 to the nozzle 1, the plasma or the active gas discharged from the discharge port 1a of the nozzle 1 is first introduced into the expansion flow path 63c. Then, the plasma or the active gas introduced into the expanded flow path 63c flows into the plurality of opening holes 63b from the expanded flow path 63c, and then is irradiated from each of the plurality of opening holes 63b toward the irradiated body H. .. At this time, since the overall opening area increases according to the number of opening holes 63b, plasma or active gas is transferred from the opening 63a to the irradiated body H while effectively expanding the irradiation area for the irradiated body H. It becomes possible to irradiate toward. In the example shown in FIG. 9, plasma or an active gas is discharged from each of the plurality of opening holes 63b to irradiate a wide area on the surface of the irradiated body H.

Further, as in the cartridge 64 of the example shown in FIG. 11, the opening 64a is provided so as to communicate with the plurality of opening holes 64b provided on the outer peripheral surface 64A and the plurality of opening holes 64b, and the plurality of opening holes are provided. A configuration having an enlarged flow path 64c for introducing plasma or an active gas into 64b may be adopted. Although detailed illustration is omitted in FIG. 11, a plurality of opening holes 64b are provided over the entire surface of the outer peripheral surface 64A.

By attaching the cartridge 64 shown in FIG. 11 to the nozzle 1, the plasma or the active gas discharged from the discharge port 1a of the nozzle 1 is first introduced into the expanded flow path 64c. Then, the plasma or the active gas introduced into the expanded flow path 64c flows into the plurality of opening holes 64b from the expanded flow path 64c, and then from each of the plurality of opening holes 64b, approximately 360 ° around the outer peripheral surface 64A. Irradiated over. When the cartridge 64 having such a configuration is used to treat the oral cavity, for example, it is possible to irradiate a wide area of the skin in the oral cavity with plasma or an active gas.

[How to use the plasma treatment device]
Next, a method of using the plasma type treatment device 100 will be described.
For example, a user such as a doctor moves the irradiation device 10 with the irradiation device 10 and directs the nozzle 1 toward the irradiated body described later. In this state, the operation switch 9 is pressed to supply plasma generation gas from the supply source 70 of the supply unit 20 to the plasma generation unit 12 of the irradiation device 10 via the gas pipeline 30, and the plasma of the irradiation device 10 is supplied from the supply unit 20. Electricity is supplied to the generation unit 12.
The plasma generating gas supplied to the plasma generating section 12 flows into the inner space of the tubular dielectric 3 from the rear end portion of the tubular dielectric 3. The plasma generating gas is ionized at a position where the internal electrode 4 to which the voltage is applied and the external electrode 5 face each other, and becomes plasma.

In the present embodiment, the internal electrode 4 and the external electrode 5 face each other in a direction orthogonal to the flow direction of the plasma generating gas. The plasma generated at the position where the outer peripheral surface of the internal electrode 4 and the inner peripheral surface of the external electrode 5 face each other includes the gas flow path 6, the first active gas flow path 7, and the second active gas flow path 8. In this order. During this period, the plasma flows while changing the gas composition, and becomes an active gas containing active species such as radicals.

The active gas generated as described above is discharged from the discharge port 1a of the nozzle 1. The discharged active gas further activates a part of the gas in the vicinity of the discharge port 1a to generate an active species. The irradiated body is irradiated with an active gas containing these active species.

Examples of the irradiated body include cells, biological tissues, and individual organisms.
Examples of the biological tissue include each organ (visceral organ), epithelial tissue covering the inner surface of the body surface and the body cavity, periodontal tissue (gingival, alveolar bone, root membrane, cementum, etc.), teeth, bone and the like. Examples of diseases and symptoms that can be treated by irradiation with active gas include oral diseases such as gingival inflammation and periodontal disease, and skin wounds.
Examples of individual organisms include mammals (humans, dogs, cats, pigs, etc.), birds, fish, and the like.

Examples of the plasma generating gas include rare gases (helium, neon, argon, krypton, etc.), nitrogen, air, oxygen, and the like. These gases may be used alone or in combination of two or more.
The plasma generating gas preferably contains nitrogen as a main component. In the present embodiment, the term "nitrogen as a main component" means that the content of nitrogen in the plasma generating gas is more than 50% by volume.
That is, the nitrogen content in the plasma generating gas is preferably more than 50% by volume, more preferably 70% by volume or more, further preferably 80 to 100% by mass, and particularly preferably 90 to 100% by mass. Examples of gas components other than nitrogen in the plasma generating gas include oxygen and rare gases.

When the plasma type treatment device 100 is an oral treatment device, the oxygen concentration of the plasma generating gas introduced into the tubular dielectric 3 is preferably 1% by volume or less. When the oxygen concentration is not more than the upper limit, the generation of ozone can be reduced.

The flow rate of the plasma generating gas introduced into the tubular dielectric 3 is preferably 1 to 10 L / min. When the flow rate of the plasma generating gas introduced into the tubular dielectric 3 is at least the above lower limit value, it is easy to suppress an increase in the temperature of the irradiated surface in the irradiated body. When the flow rate of the plasma generating gas is not more than the above upper limit value, the cleaning, activation or healing of the irradiated body can be further promoted.

The AC voltage applied between the internal electrode 4 and the external electrode 5 is preferably 5 kVpp or more and 20 kVpp or less. Here, the unit "Vpp (Volt peak to peak)" representing the AC voltage is the potential difference between the maximum value and the minimum value of the AC voltage waveform.
When the internal electrode 4 is a cylindrical member having no unevenness on the outer peripheral surface, the AC voltage applied between the internal electrode 4 and the external electrode 5 is preferably 10 kVpp or more. When the internal electrode 4 having no unevenness on the outer peripheral surface is used, it is necessary to increase the AC voltage applied between the internal electrode 4 and the external electrode 5 as compared with the case where the internal electrode 4 having unevenness on the outer peripheral surface is used. be.
When the applied AC voltage is not more than the above upper limit value, the temperature of the generated plasma can be suppressed low. When the applied AC voltage is equal to or higher than the above lower limit value, plasma can be generated more efficiently.

The frequency of the alternating current applied between the internal electrode 4 and the external electrode 5 is preferably 0.5 kHz or more and less than 20 kHz, more preferably 1 kHz or more and less than 15 kHz, further preferably 2 kHz or more and less than 10 kHz, and particularly preferably 3 kHz or more and less than 9 kHz. Most preferably, it is 4 kHz or more and less than 8 kHz. When the AC frequency is not more than the above upper limit value, the temperature of the generated plasma can be suppressed low. When the AC frequency is equal to or higher than the above lower limit, plasma can be generated more efficiently.

The temperature of the active gas irradiated from the discharge port 1a of the nozzle 1 is preferably 50 ° C. or lower, more preferably 45 ° C. or lower, still more preferably 40 ° C. or lower. When the temperature of the active gas irradiated from the discharge port 1a of the nozzle 1 is not more than the above upper limit value, the temperature of the irradiated surface is likely to be 40 ° C. or less. By setting the temperature of the irradiated surface to 40 ° C. or lower, irritation to the affected area can be reduced even when the irradiated area is the affected area. The lower limit of the temperature of the active gas irradiated from the discharge port 1a of the nozzle 1 is not particularly limited, and is, for example, 10 ° C. The temperature of the active gas is a value obtained by measuring the temperature of the active gas at the discharge port 1a with a thermocouple.

The distance (irradiation distance) from the discharge port 1a to the surface of the irradiated object is preferably in the range of, for example, 1.0 to 10 mm. When the irradiation distance is at least the above lower limit value, the temperature of the surface of the irradiated body can be lowered, and the irritation to the irradiated body can be further alleviated. When the irradiation distance is not more than the above upper limit value, the effect of healing and the like can be further enhanced.

The temperature of the surface of the irradiated object at a position separated from the discharge port 1a at a distance of 1 mm or more and 10 mm or less is preferably 40 ° C. or less. When the temperature of the surface of the irradiated body is 40 ° C. or lower, the irritation to the surface of the irradiated body can be reduced. The lower limit of the temperature of the surface of the irradiated body is not particularly limited, but is, for example, 10 ° C.
The temperature of the surface of the irradiated body is a combination of the AC voltage applied between the internal electrode 4 and the external electrode 5, the discharge amount of the activated gas to be irradiated, the distance from the tip center point Q1 of the internal electrode 4 to the discharge port 1a, and the like. It can also be adjusted by. The temperature of the surface of the irradiated body can be measured using a thermocouple.

Examples of the active species contained in the active gas include hydroxyl radical, singlet oxygen, ozone, hydrogen peroxide, superoxide anion radical, nitric oxide, nitrogen dioxide, peroxynitrite, nitrite peroxide, dinitrogen trioxide, etc. It can be exemplified. The type of the active species contained in the active gas can be adjusted by, for example, the type of the plasma generating gas.

The density of hydroxyl radicals (radical density) in the active gas is preferably 0.1 to 300 μmol / L, more preferably 0.1 to 100 μmol / L, and even more preferably 0.1 to 50 μmol / L. When the radical density is at least the above lower limit value, it is easy to promote the cleansing, activation or healing of abnormalities of the irradiated body selected from cells, biological tissues and individual organisms. When the radical density is not more than the above upper limit value, the irritation to the surface of the irradiated body can be reduced.

The radical density can be measured, for example, by the following method.
Irradiate 0.2 mL of DMPO (5,5-dimethyl-1-pyrrroline-N-oxide) 0.2 mol / L solution with an active gas for 30 seconds. At this time, the distance from the discharge port 1a to the liquid level is 5.0 mm. The hydroxyl radical concentration of the solution irradiated with the active gas is measured by using the electron spin resonance (ESR) method, and this is used as the radical density.

The density of singlet oxygen (singlet oxygen density) in the active gas is preferably 0.1 to 300 μmol / L, more preferably 0.1 to 100 μmol / L, and even more preferably 0.1 to 50 μmol / L. When the singlet oxygen density is at least the above lower limit value, it is easy to promote the cleansing, activation or healing of abnormalities of irradiated bodies such as cells, biological tissues and individual organisms. When it is not more than the above upper limit value, the irritation to the surface of the irradiated body can be reduced.

The singlet oxygen density can be measured by, for example, the following method.
0.4 mL of TPC (2,2,5,5-tetramethyl-3-pyrrroline-3-carboxamide) 0.1 mol / L solution is irradiated with an active gas for 30 seconds. At this time, the distance from the discharge port 1a to the liquid level is 5.0 mm. The singlet oxygen concentration of the solution irradiated with the active gas is measured by using the electron spin resonance (ESR) method, and this is defined as the singlet oxygen density.

The flow rate of the active gas discharged from the discharge port 1a is preferably 1 to 10 L / min.
When the flow rate of the active gas discharged from the discharge port 1a is at least the above lower limit value, the effect of the active gas acting on the surface of the irradiated object can be sufficiently enhanced. When the flow rate of the active gas discharged from the discharge port 1a is not more than the above upper limit value, it is possible to prevent the temperature of the surface of the irradiated body of the active gas from rising excessively. In addition, when the surface of the irradiated body is wet, rapid drying of the surface of the irradiated body can be prevented. Furthermore, when the surface of the irradiated body is the affected area, irritation to the patient can be suppressed. In the plasma type treatment apparatus 100, the flow rate of the active gas discharged from the discharge port 1a can be adjusted by the supply amount of the plasma generating gas to the tubular dielectric 3.
Further, in the plasma type treatment apparatus according to the present invention, the flow rate of the above-mentioned active gas is adjusted in consideration of the opening area of the opening in the cartridge.

The active gas produced by the plasma-type treatment device 100 has an effect of promoting healing of trauma and abnormalities. By irradiating a cell, a living tissue or an individual organism with an active gas, the cleansing, activation, or healing of the irradiated portion can be promoted.

When irradiating an active gas for the purpose of promoting healing of trauma or abnormality, the irradiation frequency, the number of irradiations, and the irradiation period are not particularly limited. For example, when irradiating the affected area with an active gas at an irradiation amount of 1 to 5.0 L / min, irradiation conditions such as 1 to 5 times a day, 10 seconds to 10 minutes each time, 1 to 30 days, etc. promote healing. It is preferable from the viewpoint of

The plasma type treatment device 100 of the present embodiment is particularly useful as an oral treatment instrument and a dental treatment instrument. Further, the plasma type treatment device 100 of the present embodiment is also suitable as an instrument for animal treatment.

[Action effect]
According to the plasma type treatment apparatus 100 of the present embodiment as described above, by adopting the above configuration, a cartridge having a large opening area is used in order to expand the irradiation area of plasma or active gas on the irradiated body H. Even in the case of the above, it is possible to set the optimum irradiation conditions and perform the treatment by a simple operation without reducing the flow velocity of the plasma or the active gas. Therefore, it is possible to realize a plasma-type treatment device having an enhanced effect such as wound healing and excellent operability.

<Second embodiment>
Hereinafter, the detailed configuration of the plasma-type treatment apparatus according to the second embodiment of the present invention will be described mainly with reference to FIG. 10 (see also FIG. 1 and the like as appropriate).
The plasma type treatment device described in this embodiment is also an active gas type irradiation device.
Further, in the present embodiment, the same configuration as the plasma type treatment device 100 of the first embodiment described above will be described with the same reference numerals, and detailed description thereof will be omitted.

In the plasma type treatment device of the present embodiment, instead of the cartridge having an opening having a constant opening area as described above, a cartridge 80 having a switchable (variable) opening area is attached to the irradiation device 10. In that respect, it is different from the plasma type treatment device 100 of the first embodiment. The plasma type treatment apparatus of the present embodiment is also first in that the control unit 90 is configured to adjust the flow rate of plasma or active gas according to the operation of switching the opening area in the cartridge 80. Unlike the plasma type treatment device 100 of the embodiment, other configurations are substantially the same as those of the plasma type treatment device 100.

As shown in FIG. 10, the cartridge 80 provided in the plasma-type treatment apparatus of the present embodiment has a switching means for switching the opening area of the opening 81, as described in detail below. Then, in the present embodiment, the control unit 90 is configured to be able to adjust the flow rate of the plasma or the active gas according to the opening area of the opening 81 to be switched in the cartridge 80.

Specifically, in the cartridge 80 shown in FIG. 10, an outer panel 82 having an opening 81 rotatably provided in the axial direction of the cartridge 80 and having a plurality of first opening holes 82a, and the outer panel 82. It is composed of an inner panel 83 which is fixedly provided on the inner wall side of the cartridge 80 and has a plurality of second opening holes 83a on the upstream side in the flow direction of the plasma or the active gas. Further, the outer panel 82 and the inner panel 83 are arranged so as to be adjacent to each other. Then, when the outer panel 82 is rotated, the cartridge 80 communicates with the first opening hole 82a provided in the outer panel 82 and the second opening hole 83a provided in the inner panel 83. Alternatively, the opening area of the opening 81 can be switched by blocking at least a part of the second opening hole 83a in the inner panel 83 by the region in which the first opening hole 82a is not formed in the outer panel 82. It is said that it has a similar structure. That is, in the present embodiment, the outer panel 82 and the inner panel 83 constituting the opening 81 constitute a means for switching the opening area.
In the example shown in FIG. 10, plasma or an active gas is discharged from each of the plurality of first opening holes 82a to irradiate a wide range of the surface of the irradiated body H.

Further, in the present embodiment, the cartridge 80 may be further provided with a rotation position detecting means (not shown) for detecting the rotation position of the outer panel 82. In the plasma type treatment device of the present embodiment, when the rotation position detecting means rotates the outer panel 82 to switch the opening area of the opening 81, the position information of the outer panel 82 is transmitted to the control unit 90. Then, the control unit 90 calculates the opening area in the opening 81 based on the position information of the outer panel 82, and adjusts the flow rate of the plasma or the active gas based on the calculation result.

As the means for detecting the rotation position of the outer panel 82, for example, in addition to the means by light detection using LEDs and Hall elements, the means by magnetic detection by a magnetic sensor, the means using a small contact switch, and the like are not limited. Can be adopted.

According to the plasma type treatment apparatus of the present embodiment, the opening area by the first opening hole 82a and the second opening hole 83a depends on the relationship between the position where the rotatable outer panel 82 and the fixed inner panel 83 overlap each other. By changing, the opening area of the opening 81 in the cartridge 80 can be set to a desired area. Then, by transmitting the rotation position information of the outer panel 82 to the control unit 90 from the rotation position detecting means provided in the cartridge 80, the control unit 90 adjusts the flow rate of the plasma or the active gas, and the opening of the cartridge 80. It becomes possible to uniformly control the flow velocity of the plasma or active gas irradiated from 81 toward the irradiated body H.
Therefore, according to the plasma type treatment device of the present embodiment, as in the plasma type treatment device 100 of the first embodiment, the plasma or the active gas can be used while expanding the irradiation area of the plasma or the active gas on the irradiated body H. Effective treatment can be performed under optimal irradiation conditions without reducing the flow velocity.

Further, according to the plasma type treatment apparatus of the present embodiment, by providing the cartridge 80 having the above configuration, it is possible to adjust various opening areas with only one type of cartridge without replacing the cartridge. It has excellent properties, and it is possible to reduce the operating cost of the device.

Although not shown in FIG. 10, in the plasma type treatment apparatus of the present embodiment, for example, the cartridge 80 further rotates the outer panel 82 electrically or mechanically to cause the opening 81. The irradiation device 2 shown in FIG. 2 is provided with a diagrammatic opening area switching mechanism for switching the opening area of the above-mentioned opening area. A provided configuration may be adopted. Further, the opening area setting means (not shown) may be provided in the nozzle 1.

Examples of the switching mechanism for electrically rotating the outer panel 82 include a small motor and an electromagnetic valve. When such a configuration is adopted, for example, by operating an opening area setting means composed of a button switch, a rotation switch, or the like, this operation signal is transmitted to the control unit 90, and the control unit 90 is not shown in the figure. Controls the rotation of the switching mechanism. By rotating the outer panel 82 with the rotation of the switching mechanism, the rotation position of the outer panel 82 can be set to a desired position, and the opening area of the opening 81 can be set to a desired area.

Further, as the switching mechanism for mechanically rotating the outer panel 82, for example, a mechanism connected to the above-mentioned opening area setting means by a gear, a cam mechanism, or the like can be mentioned. When such a configuration is adopted, for example, by operating the opening area setting means composed of a rotary knob or the like, the switching mechanism rotates in conjunction with this operation, and the outer panel 82 rotates accordingly. .. Thereby, the rotation position of the outer panel 82 can be set to a desired position, and the opening area of the opening 81 can be set to a desired area.

<Other embodiments>
The plasma-type treatment apparatus of the present invention may include a plasma generating unit, an irradiation device having a nozzle for discharging one or both of plasma and active gas, and a cartridge attached to the tip of the nozzle. However, the present invention is not limited to the above embodiment.

For example, the power feeding unit (not shown) may be provided inside the housing 21 of the supply unit 20, but may be provided independently of the supply unit 20.
In the illustrated example, the control unit 90 is provided inside the housing 21 of the supply unit 20, but may be provided independently of the supply unit 20.
Further, in the illustrated example, although only one supply unit 20 is provided, a configuration may be adopted in which a plurality of supply units are provided and two or more kinds of different or similar gases are supplied to the irradiation device 10.
Further, in the illustrated example, the cartridge 61 and the like are attached to the nozzle 1, but may be attached to the cowling 2, for example.

Further, the operation switch 9 may be different from the above embodiment. For example, instead of providing the operation switch 9 on the irradiation device 10, a foot pedal may be provided on the supply unit 20. In this case, it is possible to adopt a configuration in which the foot pedal is used as an operation unit and, for example, when the user steps on the foot pedal, the plasma generation gas is supplied from the supply source 70 to the plasma generation unit 12.

In the above embodiment, the shape of the internal electrode 4 is screw-shaped, but the shape of the internal electrode is not limited as long as plasma can be generated between the internal electrode and the external electrode.
The internal electrode may or may not have irregularities on the surface. The internal electrode preferably has a shape having irregularities on the outer peripheral surface.
The shape of the internal electrode may be, for example, a coil shape, or a rod shape or a tubular shape having a plurality of protrusions, holes, and through holes formed on the outer peripheral surface. As the cross-sectional shape of the internal electrode, for example, a circular shape such as a perfect circle or an ellipse, or a polygon such as a quadrangle or a hexagon can be exemplified.

In addition, it is possible to replace the constituent elements in the above-described embodiment with well-known constituent elements as appropriate without departing from the spirit of the present invention, and the above-mentioned modifications may be appropriately combined.

The plasma type treatment apparatus of the present invention can further enhance the effect of plasma. Therefore, the plasma-type treatment device of the present invention is suitable as a medical treatment device or an animal treatment device other than humans.
The treatment method using the treatment device of the present invention is also effective in promoting healing of living tissues. The treatment method using the treatment device of the present invention is effective not only for the treatment of humans but also for the treatment of animals other than humans.

1 ... Nozzle 1a ... Discharge port 3 ... Tubular dielectric (plasma generating part)
4 ... Internal electrode (plasma generator)
5 ... External electrode (plasma generator)
9 ... Operation switch 10 ... Irradiation device 12 ... Plasma generator 60, 61, 62, 63, 64, 80 ... Cartridge 60a, 61a, 62a, 63a, 64a, 81 ... Opening 62b, 63b, 64b ... Multiple opening holes 90 ... Control unit 100 ... Plasma type treatment device (active gas irradiation device)
H ... Irradiated body α ... Irradiation angle

Claims (12)

An irradiation device having a plasma generating unit for generating plasma and a nozzle having a discharge port for discharging one or both of the plasma and the active gas generated by the plasma is provided.
Further, a removable cartridge having an opening for irradiating the irradiated body with the plasma or the active gas discharged from the nozzle while expanding the irradiation area for the irradiated body.
A control unit for adjusting the flow rate of the plasma or the active gas is provided.
The control unit adjusts the flow rate of the plasma or the active gas according to the opening area of the opening in the cartridge, so that the plasma or the plasma is irradiated from the opening toward the irradiated body. A plasma-type treatment device that controls the flow velocity of active gas to a constant level. The plasma-type treatment apparatus according to claim 1, wherein the control unit further has a selection means for selecting a flow rate of the plasma or the active gas according to the opening area of the opening provided in the cartridge. The irradiation device further includes an identification means for identifying the opening area information of the opening provided in the cartridge.
The plasma-type treatment device according to claim 1, wherein the control unit adjusts the flow rate of the plasma or the active gas based on the opening area information identified by the identification means. The plasma-type treatment apparatus according to any one of claims 1 to 3, wherein the cartridge has a horn shape in which the inner diameter gradually increases toward the tip side provided with the opening. The plasma-type treatment apparatus according to any one of claims 1 to 3, wherein the cartridge has a shower shape having a plurality of opening holes provided on the tip surface of the cartridge. The cartridge is provided so that the opening communicates with a plurality of opening holes provided on the tip surface and the plurality of opening holes, and the plasma or the active gas is introduced into the plurality of opening holes. The plasma-type treatment apparatus according to any one of claims 1 to 3, further comprising an expanded flow path. The cartridge is expanded so that the opening is provided so as to communicate with a plurality of opening holes provided on the outer peripheral surface and the plurality of opening holes, and the plasma or the active gas is introduced into the plurality of opening holes. The plasma-type treatment apparatus according to any one of claims 1 to 3, which has a flow path. The cartridge further has a switching means for switching the opening area of the opening.
The plasma-type treatment device according to claim 1, wherein the control unit adjusts the flow rate of the plasma or the active gas according to the opening area of the opening to be switched in the cartridge. The cartridge has an outer panel having an opening rotatably provided in the axial direction of the cartridge and having a plurality of first opening holes, and the cartridge in the flow direction of the plasma or the active gas rather than the outer panel. On the upstream side, an inner plate which is fixedly provided on the inner wall side of the cartridge and has a plurality of second opening holes is provided.
When the outer panel is rotated, the first opening hole provided in the outer panel and the second opening hole provided in the inner panel communicate with each other, or the first opening hole in the outer panel is used. The plasma-type treatment apparatus according to claim 8, wherein the opening area of the opening is switched by closing at least a part of the second opening in the inner panel with a region in which the opening is not formed. The cartridge further comprises a rotation position detecting means of the outer panel.
The rotation position detecting means transmits the position information of the outer panel to the control unit when the outer panel is rotated to switch the opening area of the opening.
The plasma type according to claim 9, wherein the control unit calculates the opening area in the opening based on the position information of the outer panel, and adjusts the flow rate of the plasma or the active gas based on the calculation result. Treatment device. The cartridge further comprises a switching mechanism for switching the opening area of the opening by electrically or mechanically rotating the outer panel.
The plasma-type treatment device according to claim 9 or 10, wherein the irradiation device includes an opening area setting means for setting an opening area of the opening that is switched by the switching mechanism. The plasma-type treatment device according to claim 11, wherein the opening area setting means is provided in the nozzle.

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