JP6947109B2 - センサ、及び構造体の製造方法 - Google Patents
センサ、及び構造体の製造方法 Download PDFInfo
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- JP6947109B2 JP6947109B2 JP2018071510A JP2018071510A JP6947109B2 JP 6947109 B2 JP6947109 B2 JP 6947109B2 JP 2018071510 A JP2018071510 A JP 2018071510A JP 2018071510 A JP2018071510 A JP 2018071510A JP 6947109 B2 JP6947109 B2 JP 6947109B2
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Description
本開示の別の局面は、基材(3)と、前記基材の表面に形成されたシロキサン系分子膜(5)とを備える構造体(1、101)の製造方法であって、前記基材の表面を親水化し、以下の式(1)又は式(2)で表される有機化合物を前記基材の表面に接触させ、50℃以下の温度の下で、前記有機化合物の加水分解反応及び脱水縮合反応を生じさせ、前記基材の表面にシロキサン系分子膜を形成する構造体の製造方法である。
なお、この欄及び特許請求の範囲に記載した括弧内の符号は、一つの態様として後述する実施形態に記載の具体的手段との対応関係を示すものであって、本開示の技術的範囲を限定するものではない。
1.構造体
本開示の構造体は、基材と、シロキサン系分子膜とを備える。基材の材質は特に限定されない。基材として、例えば、シリコンウエハ等が挙げられる。シロキサン系分子膜を形成し易くするために、基材の表面にOH基が存在することが好ましい。基材は、例えばSiN膜を表面に備える。SiN膜の表面にはOH基が存在する。SiN膜は、例えば、低圧化気相成長(LPCVD)の方法により形成できる。基材の形態は、基板であってもよいし、それ以外の形態であってもよい。
本開示の構造体は、例えば、図2に示す形態を有する。構造体101は、基材3と、シロキサン系分子膜5と、機能性分子7と、を備える。シロキサン系分子膜5は基材3の表面に形成されている。機能性分子7はシロキサン系分子膜5と結合している。
2.センサ
本開示のセンサは、構造体を備える。本開示のセンサは、構造体に加えて他の構成を備えていてもよいし、備えていなくてもよい。センサが備える構造体は、前記「1.構造体」の項で述べた構造体のうち、機能性分子をさらに備えるものである。機能性分子は、例えば、特定の分子と化学的に又は物理的に結合する機能を有する分子である。本開示のセンサは、例えば、機能性分子に特定の分子を結合させることにより、特定の分子を検出したり、特定の分子を定量したりすることができる。
3.構造体の製造方法
本開示の構造体の製造方法は、基材と、その基材の表面に形成されたシロキサン系分子膜とを備える構造体の製造方法である。
本開示の構造体の製造方法によれば、シロキサン系分子膜に凝集が生じ難い。有機化合物は、例えば、有機シラン分子である。有機化合物として、例えば、式(3)〜式(24)のうちのいずれかで表される有機化合物が挙げられる。
4.実施例
(4−1)実施例の構造体の製造
(i)基材の親水化
シリコンウエハを用意した。このシリコンウエハは基材に対応する。シリコンウエハの表面には、低圧化気相成長の方法により、SiN膜が形成されている。SiN膜はOH基を備える。
APTMS10mgを、THF2mlに溶解して有機シラン分子溶液を調製した。この有機シラン分子溶液は飽和溶液である。
前記(i)で親水化したシリコンウエハと、前記(ii)で調製した有機シラン分子溶液とを、密閉可能なスクリュー瓶に入れた。スクリュー瓶の中で、シリコンウエハは有機シラン分子溶液に浸漬された。スクリュー瓶を密閉し、室温で1時間静置した。スクリュー瓶を密閉することで、溶媒の蒸発を抑制できる。このとき、APTMSの加水分解反応及び脱水縮合反応が生じ、シリコンウエハの表面にシロキサン系分子膜が形成された。
シリコンウエハを有機シラン分子溶液から取り出し、THFを用いて洗浄した。この洗浄により、シリコンウエハの表面に結合しなかったAPTMSが除去された。
基本的には実施例の構造体と同様にして、比較例の構造体を製造した。ただし、シロキサン系分子膜の形成に用いる有機シラン分子として、APTMSの代わりに、APTESを用いた。
実施例の構造体、及び比較例の構造体のそれぞれについて、SEMを用いてシロキサン系分子膜を観察した。実施例の構造体におけるSEM観察像を図4に示す。比較例の構造体におけるSEM観察像を図5に示す。
濃度が10mMであるDBCO−NHS溶液5μlと、濃度が0.1MであるNaHCO3水溶液495μlとを混合し、濃度が100μMであるDBCO−NHS溶液(以下では、100μMDBCO−NHS溶液とする)を作成した。濃度が10mMであるDBCO−NHS溶液は、以下の市販品である。
Product Code:761524
CAS No.:1353016-71-3
次に、実施例の構造体と、上記のように作成した100μMDBCO−NHS溶液とを、密閉可能なスクリュー瓶に入れた。スクリュー瓶の中で、実施例の構造体は100μMDBCO−NHS溶液に浸漬された。スクリュー瓶を密閉し、室温で1時間静置した。スクリュー瓶を密閉することで、溶媒の蒸発を抑制できる。このとき、APTMSのNH2基とDBCO−NHSのNHS基とが反応し、DBCO−NHSはシロキサン系分子膜と結合した。DBCO基は、APTMSを介してシリコンウエハの表面に導入された。DBCO−NHSがシロキサン系分子膜と結合した実施例の構造体を、以下では、DBCO基導入構造体とする。DBCO基導入構造体は、機能性分子を備える構造体に対応する。
(4−5)Cyanine3導入構造体の製造
濃度が100μMであるCyanine3アジド溶液4μlと、PBS396μlとを混合し、濃度が1μMであるCyanine3アジド溶液(以下では、1μMCyanine3アジド溶液とする)を作成した。PBSは、137mMのNaClと、2.7mMのKClと、10mMのリン酸とを含む緩衝液である。PBSのpHは7.4である。濃度が100μMであるCyanine3アジド溶液は、以下の市販品である。
Product Code:B1030
CAS No.:なし
次に、DBCO基導入構造体と、上記のように作成した1μMCyanine3アジド溶液とを、密閉可能なスクリュー瓶に入れた。スクリュー瓶の中で、DBCO基導入構造体は1μMCyanine3アジド溶液に浸漬された。スクリュー瓶を密閉し、室温で1時間静置した。スクリュー瓶を密閉することで、溶媒の蒸発を抑制できる。このとき、DBCO基とアジド基とが反応し、Cyanine3アジドは、DBCO−NHSと結合した。Cyanine3は、APTMS及びDBCO−NHSを介してシリコンウエハの表面に導入された。Cyanine3が導入された構造体を、以下では、Cyanine3導入構造体とする。Cyanine3導入構造体は、機能性分子を備える構造体に対応する。
(4−6)機能性分子を備える構造体の評価
DBCO基導入構造体と、Cyanine3導入構造体との蛍光イメージを図12に示す。図12において「APTMS>DBCO−NHS」はDBCO基導入構造体を示す。図12において「APTMS>DBCO−NHS>Cy3−N3」はCyanine3導入構造体を示す。
以上、本開示の実施形態について説明したが、本開示は上述の実施形態に限定されることなく、種々変形して実施することができる。
Claims (6)
- 構造体(1、101)を備えるセンサ(201)であって、
前記構造体は、
基材(3)と、
p-アミノフェニルトリメトキシシランを用いて前記基材の表面に形成されたシロキサン系分子膜(5)と、
前記シロキサン系分子膜と結合した機能性分子(7、7A、7B、7C、7D)と、
を備え、
前記シロキサン系分子膜と結合している前記機能性分子は、前記シロキサン系分子膜における領域(9、11、13、15)ごとに異なるセンサ。 - 請求項1に記載のセンサであって、
前記機能性分子は、p-アミノフェニルトリメトキシシランが備えるアミノ基と直接的に又は間接的に結合しているセンサ。 - 請求項1又は2に記載のセンサであって、
前記機能性分子は、特定の分子(17A、17B、17C、17D)と化学的に又は物理的に結合する機能を有するセンサ。 - 請求項1〜3のいずれか1項に記載のセンサであって、
前記機能性分子は、低分子、錯体、DNA、ペプチド、抗体、及び糖鎖から成る群から選択される1以上であるセンサ。 - 基材(3)と、前記基材の表面に形成されたシロキサン系分子膜(5)とを備える構造体(1、101)の製造方法であって、
前記基材の表面を親水化し、
p-アミノフェニルトリメトキシシランを前記基材の表面に接触させ、
50℃以下の温度の下で、p-アミノフェニルトリメトキシシランの加水分解反応及び脱水縮合反応を生じさせ、前記基材の表面にシロキサン系分子膜を形成する構造体の製造方法。 - 請求項5に記載の構造体の製造方法であって、
p-アミノフェニルトリメトキシシランの飽和溶液を前記基材の表面に接触させる構造体の製造方法。
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| PCT/JP2019/010541 WO2019193943A1 (ja) | 2018-04-03 | 2019-03-14 | 構造体、センサ、及び構造体の製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4554088A (en) * | 1983-05-12 | 1985-11-19 | Advanced Magnetics Inc. | Magnetic particles for use in separations |
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| JPH0679167A (ja) * | 1992-09-02 | 1994-03-22 | Toshiba Corp | 単分子膜の製造方法 |
| EP2574617B1 (en) * | 1996-02-09 | 2016-04-20 | Cornell Research Foundation, Inc. | Detection of nucleic acid sequence differences using the ligase detection reaction with addressable arrays |
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| JP2002356651A (ja) | 2001-05-30 | 2002-12-13 | Dow Corning Toray Silicone Co Ltd | 撥水コーティング用シリコーン組成物 |
| AU2002322458A1 (en) | 2001-07-13 | 2003-01-29 | Nanosphere, Inc. | Method for immobilizing molecules onto surfaces |
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