JP5266059B2 - 回折格子の製造方法 - Google Patents
回折格子の製造方法 Download PDFInfo
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- JP5266059B2 JP5266059B2 JP2008540636A JP2008540636A JP5266059B2 JP 5266059 B2 JP5266059 B2 JP 5266059B2 JP 2008540636 A JP2008540636 A JP 2008540636A JP 2008540636 A JP2008540636 A JP 2008540636A JP 5266059 B2 JP5266059 B2 JP 5266059B2
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1852—Manufacturing methods using mechanical means, e.g. ruling with diamond tool, moulding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
- B29D11/00769—Producing diffraction gratings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Ophthalmology & Optometry (AREA)
- Health & Medical Sciences (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Description
−前記型に抗接着層を塗布して、前記型からの回折格子の分離を促進するステップと、
−前記型に硬化物質を塗布するステップと、
−前記物質を少なくとも部分的に硬化して回折格子を製造するステップと、
−前記型から前記回折格子10を分離させるステップ。
−傾斜角度ψは20度以上及び70度以下である。
−逃げ角γは0度以上及び20度以下であり、
−深さhの格子周期dに対する割合は、0.4以上である。
−傾斜角度ψは25度以上及び45度以下である。
−逃げ角γは5度以上及び12度以下であり、
−深さhの格子周期dに対する割合は、0.6以上である。
−メチル−ノナフルオロ−ブチルエーテルを溶媒として使用し、トリデカフルオロ−1,1,2,2−テトラヒドロ−オクチル−トリクロロシランの0.2%溶液を調合する。
−シリカ型50を上述した溶液に10分間浸す。
−シリカ型50をメチル−ノナフルオロ−ブチルエーテルに10分間浸す。
−型を窒素雰囲気で乾燥させる。
10 回折格子
20 基板
30 抗接着層
50 型
57 突出部(突起)
58 微細溝
60 回折レンズ
200 光導波路
Claims (15)
- 複数の隣接する微細な溝(58)を有する型(50)を用いる回折格子(10)の製造方法であって、前記溝(58)の一方の面の角度と他方の面の角度の平均である、傾斜角(ψ)は、型(50)の平面の垂直軸(N)に対し20度以上及び70度以下であり、前記溝(58)の深さ(h)は型(50)の格子周期(d)の0.4倍以上であり、前記型(50)の格子周期(d)は0.2μm以上及び10μm以下であり、前記溝(58)の一方の面に対する他方の面の角度である、逃げ角(γ)は、0度よりも大きく20度以下であり、前記方法は、
前記型(50)からの回折格子(10)の分離を促進するために、前記型(50)に抗接着層(30)を塗布するステップと、
前記型(50)に硬化物質(M1)を塗布するステップと、
回折格子(10)を製造するために、前記硬化物質(M1)を少なくとも部分的に硬化するステップと、
前記硬化物質(M1)を部分的に硬化することによって、前記型(50)から前記回折格子(10)を局所的に分離させるステップと、を少なくとも含む方法。 - 前記溝(58)の傾斜角(ψ)は、前記型(50)の平面の垂直軸(N)に対し25度以上及び45度以下である、請求項1に記載の方法。
- 前記溝(58)の逃げ角γは5度以上及び12度以下で請求項1又は2に記載の方法。
- 前記型(50)の充てん率(c2)は0.2以上及び0.8以下である、請求項1〜3のいずれか1項に記載の方法。
- 前記溝(58)の深さ(h)は、格子周期(d)の0.6以上である、請求項1〜4のいずれか1項に記載の方法。
- 前記硬化物質(M1)が熱により硬化する、請求項1〜5のいずれか1項に記載の方法。
- 前記回折格子(10)は、前記硬化物質(M1)の温度が50℃以上のときに柔軟に保たれ前記回折格子(10)が前記型(50)から分離する、請求項6に記載の方法。
- 前記硬化物質(M1)がUV照射により硬化する、請求項1〜5のいずれか1項に記載の方法。
- 前記回折格子(10)の前記硬化物質(M1)が半固化状態のときに前記回折格子(10)が前記型(50)から分離する、請求項1〜8のいずれか1項に記載の方法。
- さらに基板(20)を前記回折格子(10)に接合させる、請求項1〜9のいずれか1項に記載の方法。
- 分離力を前記基板(20)の角及び/又は端部において前記回折格子(10)が前記型(50)から離れる方向に向かわせることにより前記回折格子(10)が前記型(50)から分離する、請求項10に記載の方法。
- 前記基板(20)は屈曲が可能である、請求項10又は11に記載の方法。
- さらに、前記基板(20)を接着促進剤で処理する、請求項10〜12のいずれか1項に記載の方法。
- 前記型(50)は、第一の傾斜角(ψ1)を有する第一の溝(58a)と第二の傾斜角(ψ2)を有する第二の溝(58b)とを少なくとも有し、前記第一の傾斜角(ψ1)は前記第二の傾斜角(ψ2)と相違する、請求項1〜13のいずれか1項に記載の方法。
- 前記型(50)の少なくともひとつの領域(A3)は、円形の及び/又は曲線状の微細溝(58)を含む、請求項1〜14のいずれか1項に記載の方法。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/FI2005/050422 WO2007057500A1 (en) | 2005-11-18 | 2005-11-18 | Method of producing a diffraction grating element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009516225A JP2009516225A (ja) | 2009-04-16 |
| JP5266059B2 true JP5266059B2 (ja) | 2013-08-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008540636A Expired - Lifetime JP5266059B2 (ja) | 2005-11-18 | 2005-11-18 | 回折格子の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8092723B2 (ja) |
| EP (1) | EP1949147B1 (ja) |
| JP (1) | JP5266059B2 (ja) |
| CN (1) | CN101313234B (ja) |
| AT (1) | ATE550685T1 (ja) |
| WO (1) | WO2007057500A1 (ja) |
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| CN111929985A (zh) * | 2020-08-13 | 2020-11-13 | 杭州欧光芯科技有限公司 | 一种斜齿光栅的纳米压印方法 |
| CN112394436B (zh) * | 2020-11-25 | 2021-07-06 | 中国科学院上海光学精密机械研究所 | 1064纳米波段的非对称结构全介质反射式合束光栅 |
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| IT1255205B (it) | 1992-07-03 | 1995-10-20 | Composizione di ensimaggio per fibre polipropileniche | |
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| JP4338558B2 (ja) | 2004-03-11 | 2009-10-07 | 三洋電機株式会社 | 光ピックアップ |
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- 2005-11-18 US US12/094,232 patent/US8092723B2/en not_active Expired - Lifetime
- 2005-11-18 AT AT05812973T patent/ATE550685T1/de active
- 2005-11-18 JP JP2008540636A patent/JP5266059B2/ja not_active Expired - Lifetime
- 2005-11-18 EP EP05812973A patent/EP1949147B1/en not_active Expired - Lifetime
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| ATE550685T1 (de) | 2012-04-15 |
| US20090224416A1 (en) | 2009-09-10 |
| WO2007057500A1 (en) | 2007-05-24 |
| EP1949147A4 (en) | 2010-07-14 |
| CN101313234B (zh) | 2011-01-05 |
| EP1949147B1 (en) | 2012-03-21 |
| US8092723B2 (en) | 2012-01-10 |
| JP2009516225A (ja) | 2009-04-16 |
| CN101313234A (zh) | 2008-11-26 |
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