[go: up one dir, main page]

JP2018179783A - Target substance detection chip, target substance detection device and target substance detection method - Google Patents

Target substance detection chip, target substance detection device and target substance detection method Download PDF

Info

Publication number
JP2018179783A
JP2018179783A JP2017080282A JP2017080282A JP2018179783A JP 2018179783 A JP2018179783 A JP 2018179783A JP 2017080282 A JP2017080282 A JP 2017080282A JP 2017080282 A JP2017080282 A JP 2017080282A JP 2018179783 A JP2018179783 A JP 2018179783A
Authority
JP
Japan
Prior art keywords
target substance
substance detection
concavo
detection chip
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017080282A
Other languages
Japanese (ja)
Other versions
JP7029121B2 (en
Inventor
藤巻 真
Makoto Fujimaki
真 藤巻
裕樹 芦葉
Hiroki Ashiba
裕樹 芦葉
雅人 安浦
Masato YASUURA
雅人 安浦
集 田邉
Tsudoi Tanabe
集 田邉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Toppan Inc
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST, Toppan Printing Co Ltd filed Critical National Institute of Advanced Industrial Science and Technology AIST
Priority to JP2017080282A priority Critical patent/JP7029121B2/en
Priority to EP18784840.3A priority patent/EP3594663A4/en
Priority to US16/604,877 priority patent/US11112359B2/en
Priority to PCT/JP2018/015170 priority patent/WO2018190358A1/en
Publication of JP2018179783A publication Critical patent/JP2018179783A/en
Application granted granted Critical
Publication of JP7029121B2 publication Critical patent/JP7029121B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Optical Measuring Cells (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a target substance detection chip, device, and method, which enable detection of a target substance using magnetic particles, improve target substance detection accuracy, and allow for manufacturing a compact target substance detection device at low cost.SOLUTION: A target substance detection chip 1 of the present invention comprises a concavo-concave structure consisting of a plurality of protrusions periodically arranged on a light-transmissive substrate 2.SELECTED DRAWING: Figure 1

Description

本発明は、磁場の印加に伴う目的物質の移動を光学的に観察可能な目的物質検出チップ、目的物質検出装置及び目的物質検出方法に関する。   The present invention relates to a target substance detection chip capable of optically observing the movement of a target substance accompanying the application of a magnetic field, a target substance detection device, and a target substance detection method.

近年、溶液中に存在する微小物質、特にDNA、RNA、タンパク質、ウイルス、細菌等の生体関連物質を検出・定量する方法が開発されている。このような方法としては、例えば、全反射によるエバネッセント場を利用する方法、表面プラズモン共鳴を利用する方法、導波モード(光導波モード、導波路モード、光導波路モードなどとも呼ばれる)の励起を利用する方法が知られている。   In recent years, methods have been developed for detecting and quantifying minute substances present in a solution, particularly biologically relevant substances such as DNA, RNA, proteins, viruses, and bacteria. As such a method, for example, a method using an evanescent field by total reflection, a method using surface plasmon resonance, excitation using a waveguide mode (also called an optical waveguide mode, a waveguide mode, an optical waveguide mode, etc.) The way to do it is known.

前記全反射によるエバネッセント場を利用する方法としては、全反射照明蛍光顕微鏡が挙げられる。全反射照明蛍光顕微鏡は、試料とカバーガラス或いはスライドガラスとの界面で入射光を全反射させ、これによって生じるエバネッセント場を励起光として利用し、ノイズとなるバックグラウンド光が少ない蛍光観察を行う技術である(特許文献1参照)。該技術は、超解像を実現可能な技術であり、単分子観察を可能とする。   As a method of utilizing the evanescent field by the total reflection, there is a total reflection illumination fluorescence microscope. Total reflection illumination fluorescence microscope is a technology that totally reflects incident light at the interface between a sample and a cover glass or slide glass, uses the evanescent field generated thereby as excitation light, and performs fluorescence observation with a small amount of background light as noise. (See Patent Document 1). The technology is a technology capable of achieving super resolution, and enables single molecule observation.

前記表面プラズモン共鳴を利用する方法としては、例えば、表面プラズモン共鳴励起増強蛍光分光法が知られている。
この方法は、クレッチマン配置と呼ばれる光学配置を用いて、プリズムに接したガラス表面の金薄膜層と液体試料との界面での入射光の全反射によって、前記金薄膜上に表面プラズモン共鳴を励起し、前記金薄膜表面に増強電場を形成することを特徴とする。前記表面プラズモン共鳴によって前記金薄膜表面近傍において増強された光を励起光として、前記増強電場内に存在する蛍光分子を励起し、強い蛍光を生じさせ、バックグラウンド光が少ない蛍光観察を行う技術である(特許文献2参照)。
As a method of using the surface plasmon resonance, for example, surface plasmon resonance excitation-enhanced fluorescence spectroscopy is known.
This method excites surface plasmon resonance on the gold thin film by total reflection of incident light at the interface between the gold thin film layer on the glass surface in contact with the prism and the liquid sample using an optical arrangement called a Kretschmann arrangement. Forming an enhanced electric field on the surface of the gold thin film. Using the light enhanced in the vicinity of the surface of the gold thin film by the surface plasmon resonance as excitation light, the fluorescent molecules present in the enhanced electric field are excited to generate strong fluorescence and perform fluorescence observation with less background light (See Patent Document 2).

また、前記導波モードの励起を利用する方法は、シリカガラス基板上にシリコン層(半導体層)とSiO層とをこの順で積層した検出チップを、シリカガラス製の台形プリズム上に設置して、前記検出チップの表面で全反射される条件で前記台形プリズム側から光を照射し、増強電場を得ることを特徴とする(非特許文献1参照)。この方法では、前記検出チップに対して裏面側(シリカガラス基板側)から前記全反射条件を満たしつつ特定の入射角で前記光を照射すると、特定波長の光が前記検出チップ内を伝搬する前記導波モードと結合し、前記導波モードが励起される。前記導波モードが励起されると、前記検出チップ表面近傍に前記増強電場が発生する。これにより、前記増強電場内に存在する蛍光分子が励起され、バックグラウンド光が少ない蛍光観察を行うことができる(非特許文献2参照)。なお、前記半導体層としては、金属層で形成することもでき、前記半導体層を前記金属層で構成する検出チップにおいて励起される前記導波モードは、リーキーモード、漏洩モードなど呼ばれることがある(非特許文献3参照)。 In the method using excitation of the waveguide mode, a detection chip in which a silicon layer (semiconductor layer) and an SiO 2 layer are laminated in this order on a silica glass substrate is placed on a silica glass trapezoidal prism. Then, light is irradiated from the side of the trapezoidal prism under the condition of total reflection on the surface of the detection chip to obtain an enhanced electric field (see Non-Patent Document 1). In this method, when the light is irradiated at a specific incident angle while satisfying the total reflection condition from the back surface side (silica glass substrate side) to the detection chip, the light of a specific wavelength propagates in the detection chip Coupled with the guided mode, the guided mode is excited. When the guided mode is excited, the enhanced electric field is generated near the surface of the detection chip. Thereby, the fluorescent molecule present in the enhanced electric field is excited, and fluorescence observation with less background light can be performed (see Non-Patent Document 2). The semiconductor layer may be formed of a metal layer, and the waveguide mode excited in the detection chip in which the semiconductor layer is formed of the metal layer may be called leaky mode, leaky mode, etc. Non-Patent Document 3).

しかしながら、こうした前記検出チップ表面近傍に生ずる前記増強電場を利用した前記蛍光観察方法では、検出精度に課題を有し、前記検出精度の一層の向上が望まれている。
即ち、前記蛍光観察方法で検出される光信号には、前記蛍光分子からの蛍光のほか、前記検出チップ表面の汚れや傷による散乱光、前記検出チップの構成部材から生じる自家蛍光、試料中に含まれる夾雑物からの発光等に基づくノイズ信号が含まれることから、前記蛍光観察方法では、前記検出精度の低下要因となる前記ノイズ信号を排除することが求められる。
However, in the fluorescence observation method using the enhanced electric field generated in the vicinity of the surface of the detection chip, the detection accuracy has a problem, and further improvement of the detection accuracy is desired.
That is, in the light signal detected by the fluorescence observation method, in addition to the fluorescence from the fluorescent molecule, the scattered light due to the stains or scratches on the surface of the detection chip, the autofluorescence generated from the components of the detection chip, Since the noise signal based on the light emission from the impurities contained is included, the fluorescence observation method is required to exclude the noise signal that is a cause of the decrease in the detection accuracy.

こうしたことから、本発明者らは、前記ノイズ信号を排除した目的物質検出方法として、目的物質に蛍光標識物質や光散乱物質のような標識物質及び磁性粒子を結合させ、その結合体の様子を磁場印加部(例えば、磁石)による磁場の印加前後で比較観察することで、前記磁場印加前における光信号に含まれるノイズ信号を排除した検出を行う方法を提案している。
この方法によれば、前記標識物質及び前記磁性粒子と結合した前記目的物質が前記磁場の印加により移動するのに対し、前記検出チップ表面のキズ等を原因とする前記ノイズ信号は、前記磁場の印加により移動しないことを利用して、前記ノイズ信号を排除した検出を行うことができる(非特許文献4,5参照)。
From the above, as the target substance detection method in which the noise signal is eliminated, the present inventors bind a labeling substance such as a fluorescent labeling substance or a light scattering substance to a target substance and a magnetic particle, and By performing comparative observation before and after application of a magnetic field by a magnetic field application unit (for example, a magnet), a method is proposed in which detection is performed excluding noise signals contained in an optical signal before application of the magnetic field.
According to this method, while the target substance combined with the labeling substance and the magnetic particles is moved by the application of the magnetic field, the noise signal caused by a flaw or the like on the surface of the detection chip is It is possible to perform the detection excluding the noise signal by using the fact that it does not move by application (see Non-Patent Documents 4 and 5).

しかしながら、この提案においても、前記結合体が前記検出チップの表面と非特異的に吸着して前記磁場の印加前後で移動しないことがあり、移動しない前記結合体からの光信号は、前記ノイズ信号と同様に扱われるため、前記結合体と前記検出チップとの吸着状況によっては、前記検出精度の向上が見込めないことがある。一方、この問題を解決するため、強い磁場を印加して前記結合体を確実に移動させようとすると、装置が大掛かりになるとともに製造コストが嵩むこととなる。   However, even in this proposal, the conjugate may adsorb nonspecifically to the surface of the detection chip and may not move before and after application of the magnetic field, and the light signal from the conjugate which does not move is the noise signal In the same manner as in the above, depending on the adsorption situation of the conjugate and the detection chip, improvement in the detection accuracy may not be expected. On the other hand, in order to solve this problem, if a strong magnetic field is applied to move the combination reliably, the apparatus becomes large-scaled and the manufacturing cost increases.

特開2002−236258号公報JP 2002-236258 A 国際公開2015/194663号公報International Publication 2015/194663

M. Fujimaki et al. Optics Express, Vol. 23 (2015) pp.10925 - 10937M. Fujimaki et al. Optics Express, Vol. 23 (2015) pp. 10925-10937 K. Nomura et al. J. Appl. Phys. Vol. 113, (2013) pp.143103-1-143103-6K. Nomura et al. J. Appl. Phys. Vol. 113, (2013) pp. 143103-1-143103-6 R. P. Podgorsek, H. Franke, J. Woods, and S .Morrill, Sensor. Actuat. B51 pp.146-151 (1998年)R. P. Podgorsek, H. Franke, J. Woods, and S. Morrill, Sensor. Actuat. B51 pp. 146-151 (1998) 安浦 雅人、藤巻 真「微量検出のための導波モードイメージセンサの開発」電気学会研究会資料 センサ・マイクロマシン部門総合研究会(2016年6月29日,30日)、pp.45〜52、一般社団法人電気学会(2016年)Masato Yasuura, Makoto Fujimaki "Development of a guided-wave mode image sensor for trace detection" Research Institute of Electrical Engineers of Japan Material Sensor and Micromachine Division General Research Group (June 29, 2016), pp. 45-52, The Institute of Electrical Engineers of Japan (2016) M.Yasuura and M.Fujimaki, Sci. Rep. Vol. 6, pp. 39241-1-39241-7 (2016)M. Yasuura and M. Fujimaki, Sci. Rep. Vol. 6, pp. 39241-1-39241-7 (2016)

本発明は、従来技術における前記諸問題を解決し、磁性粒子を用いた目的物質の検出に用いることができ、前記目的物質の検出精度を向上させるとともに目的物質検出装置を小型でかつ低コストに製造可能な目的物質検出チップ、目的物質検出装置及び目的物質検出方法を提供することを課題とする。   The present invention solves the above-mentioned problems in the prior art and can be used for detection of a target substance using magnetic particles, improves the detection accuracy of the target substance and makes the target substance detection device smaller and less expensive. An object of the present invention is to provide a target substance detection chip that can be manufactured, a target substance detection device, and a target substance detection method.

前記課題を解決するための手段としては、以下の通りである。即ち、
<1> 光透過性基板上に、複数の凸部を周期的に配して構成される凹凸構造を有することを特徴とする目的物質検出チップ。
<2> 平滑面を有する光透過性基板と、前記光透過性基板の前記平滑面上に積層されるとともに前記光透過性基板側の面と反対の面が凹凸面とされる凹凸構造付与層とで構成され、前記凹凸面で凹凸構造が形成される前記<1>に記載の目的物質検出チップ。
<3> 光透過性基板上に、少なくとも一の面に全反射条件で光が照射されたとき他の面上に増強電場が形成される電場増強層が配され、前記光透過性基板側の面を裏面として前記裏面側から前記電場増強層の前記一の面に対し前記光が全反射条件で照射されたときに前記増強電場が表面近傍に存在可能とされる前記<1>から<2>のいずれかに記載の目的物質検出チップ。
<4> 平滑面を有する光透過性基板と、前記光透過性基板の前記平滑面上に積層される平滑な電場増強層と、前記電場増強層上に積層される凹凸構造付与層とで構成され、前記凹凸構造付与層の凹凸面で凹凸構造が形成される前記<3>に記載の目的物質検出チップ。
<5> 平滑面を有する光透過性基板と、前記光透過性基板の前記平滑面上に積層されるとともに前記光透過性基板側の面と反対の面が第1凹凸面とされる凹凸構造付与層と、前記凹凸構造付与層の前記第1凹凸面上に積層されるとともに前記凹凸構造付与層側の面と反対の面が前記第1凹凸面の凹凸パターンが転写された形状の第2凹凸面とされる電場増強層とで構成され、前記第2凹凸面で凹凸構造が形成される前記<3>に記載の目的物質検出チップ。
<6> 第1凹凸面を有する光透過性基板と、前記光透過性基板の前記第1凹凸面上に積層されるとともに前記光透過性基板側の面と反対の面が前記第1凹凸面の凹凸パターンが転写された形状の第2凹凸面とされる電場増強層とで構成され、前記第2凹凸面で凹凸構造が形成される前記<3>に記載の目的物質検出チップ。
<7> 凸部が2種類以上の形状で形成されるとともに、前記形状の少なくとも1種が2回回転対称形状及び線対称形状のいずれかとされる前記<1>から<6>のいずれかに記載の目的物質検出チップ。
<8> 前記<1>から<7>のいずれかに記載の目的物質検出チップと、前記目的物質検出チップの凹凸構造が形成される面と反対の面を裏面として前記裏面側から全反射条件で光を照射可能とされる光照射部と、前記目的物質検出チップの表面上に導入される液体試料に含まれる磁性粒子を前記表面に平行な方向又は前記表面から遠ざける方向に移動させる第1磁場を印加可能とされる第1磁場印加部及び前記目的物質検出チップの前記裏面側に配されるとともに前記表面上に導入された前記液体試料中の前記磁性粒子を前記表面上に引き寄せる第2磁場を印加可能とされる第2磁場印加部の少なくともいずれかで形成される磁場印加部と、を備えることを特徴とする目的物質検出装置。
<9> 第2の磁場印加部を有し、かつ、前記第2磁場印加部が第2磁場を印加した状態で目的物質検出チップ表面の面内方向と平行な方向のベクトル成分を持つ方向に移動可能とされる前記<8>に記載の目的物質検出装置。
<10> 前記<1>から<7>のいずれかに記載の目的物質検出チップの凹凸構造が形成される面と反対の面を裏面として前記裏面側から全反射条件で光を照射する光照射工程と、前記目的物質検出チップの表面上に導入される液体試料に含まれる目的物質と磁性粒子との結合体を第1磁場の印加により前記表面に平行な方向又は前記表面から遠ざける方向に移動させる第1結合体移動工程、及び、前記裏面側に配される磁場印加部からの第2磁場の印加により前記液体試料中の前記結合体を前記表面上に引き寄せる第2結合体移動工程の少なくともいずれかで実施される結合体移動工程と、を含むことを特徴とする目的物質検出方法。
<11> 第2結合体移動工程を含み、かつ、前記第2結合体移動工程が第2磁場を印加した状態で磁場印加部を目的物質検出チップ表面の面内方向と平行な方向のベクトル成分を持つ方向に移動させ、前記磁場印加部の移動に追従させて結合体を移動させる工程である前記<10>に記載の目的物質検出方法。
The means for solving the problems are as follows. That is,
<1> A target substance detection chip having a concavo-convex structure configured by periodically arranging a plurality of convex portions on a light transmitting substrate.
<2> A light transmitting substrate having a smooth surface, and a concavo-convex structure providing layer which is laminated on the smooth surface of the light transmitting substrate and whose surface opposite to the surface on the light transmitting substrate side is a concavo-convex surface The target substance detection chip according to <1>, wherein the concavo-convex structure is formed by the concavo-convex surface.
<3> An electric field enhancing layer is formed on the light transmitting substrate, on which at least one surface is irradiated with light under total reflection conditions so that an enhanced electric field is formed on the other surface. When the light is irradiated under total reflection conditions to the one surface of the electric field enhancing layer from the back surface side with the surface as the back surface, the enhanced electric field can be present in the vicinity of the surface from <1> to <2 The target substance detection chip according to any one of the above.
<4> A light transmitting substrate having a smooth surface, a smooth electric field enhancing layer laminated on the smooth surface of the light transmitting substrate, and a concavo-convex structure imparting layer laminated on the electric field enhancing layer The target substance detection chip according to <3>, wherein a concavo-convex structure is formed on the concavo-convex surface of the concavo-convex structure providing layer.
<5> A light transmitting substrate having a smooth surface, and a concavo-convex structure in which the light transmitting substrate is laminated on the smooth surface and the surface opposite to the surface on the light transmitting substrate side is a first uneven surface A second layer having a shape obtained by laminating the application layer and the first concavo-convex surface of the concavo-convex structure application layer and the surface opposite to the surface on the concavo-convex structure application layer side to which the concavo-convex pattern of the first concavo-convex surface is transferred The target substance detection chip according to <3>, wherein the target substance detection chip is formed of an electric field enhancing layer which is a concavo-convex surface, and a concavo-convex structure is formed by the second concavo-convex surface.
<6> A light transmitting substrate having a first uneven surface, and a surface stacked on the first uneven surface of the light transmitting substrate and opposite to the light transmitting substrate side is the first uneven surface The target substance detection chip according to <3>, wherein the target substance detection chip is formed of an electric field enhancing layer, which is a second uneven surface having a shape to which the uneven pattern is transferred, and is formed of the second uneven surface.
A <7> convex part is formed in two or more types of shapes, and at least 1 type of the said shape is made into either of 2-fold rotational symmetry shape and line symmetry shape to either of said <1> to <6> The target substance detection chip described above.
<8> Total reflection condition from the back surface side with the target substance detection chip according to any one of <1> to <7> and the surface opposite to the surface on which the concavo-convex structure of the target substance detection chip is formed A light irradiating section capable of irradiating light, and moving a magnetic particle contained in a liquid sample introduced onto the surface of the target substance detection chip in a direction parallel to the surface or in a direction away from the surface A first magnetic field application unit to which a magnetic field can be applied, and a second magnetic field application unit that is disposed on the back surface side of the target substance detection chip and draws the magnetic particles in the liquid sample introduced onto the surface onto the surface A target substance detection device comprising: a magnetic field application unit formed by at least one of a second magnetic field application unit to which a magnetic field can be applied.
<9> A second magnetic field application unit is provided, and the second magnetic field application unit applies a second magnetic field in a direction having a vector component in a direction parallel to the in-plane direction of the target substance detection chip surface. The target substance detection device according to <8>, which is movable.
The light irradiation which irradiates light on total reflection conditions from the said back surface side by making the surface opposite to the surface in which the uneven structure of the target substance detection chip in any one of <10> said <1> to <7> is formed into a back surface Moving the combination of the target substance and the magnetic particles contained in the liquid sample introduced onto the surface of the target substance detection chip in a direction parallel to the surface or in a direction away from the surface by application of a first magnetic field And at least a second combination moving step of drawing the combination in the liquid sample on the surface by application of a second magnetic field from the magnetic field application unit disposed on the back surface side. And a conjugate transfer step performed in any one of the above.
<11> A vector component in a direction parallel to the in-plane direction of the target substance detection chip surface, including the second combined body moving step, and the second combined body moving step applies the second magnetic field, and the magnetic field application unit The target substance detection method according to <10>, wherein the target substance is moved in a direction having the following equation to move the combined body following the movement of the magnetic field application unit.

本発明によれば、従来技術における前記諸問題を解決することができ、磁性粒子を用いた目的物質の検出に用いることができ、前記目的物質の検出精度を向上させるとともに目的物質検出装置を小型でかつ低コストに製造可能な目的物質検出チップ、目的物質検出装置及び目的物質検出方法を提供することができる。   According to the present invention, the above-mentioned problems in the prior art can be solved, which can be used for detection of a target substance using magnetic particles, and the detection accuracy of the target substance can be improved and the target substance detection device can be miniaturized. It is possible to provide a target substance detection chip, a target substance detection device, and a target substance detection method which can be manufactured at low cost.

第1実施形態の概略構成を示す説明図である。It is an explanatory view showing a schematic structure of a 1st embodiment. 凹凸構造により結合体の吸着が抑制される様子を説明する説明図(1)である。It is explanatory drawing (1) explaining a mode that adsorption | suction of a coupling body is suppressed by uneven structure. 凹凸構造により結合体の吸着が抑制される様子を説明する説明図(2)である。It is explanatory drawing (2) explaining a mode that adsorption | suction of a coupling body is suppressed by uneven structure. 第2実施形態の概略構成を示す説明図である。It is explanatory drawing which shows schematic structure of 2nd Embodiment. 第3実施形態の概略構成を示す説明図である。It is explanatory drawing which shows schematic structure of 3rd Embodiment. 第4実施形態の概略構成を示す説明図である。It is explanatory drawing which shows schematic structure of 4th Embodiment. 凹凸構造の形成例を示す斜視図である。It is a perspective view which shows the example of formation of an uneven structure. 凹凸構造の形成例を示す上面図である。It is a top view which shows the example of formation of an uneven structure. 1つの凸部を拡大して示す上面図である。It is a top view which expands and shows one convex part. 上面に加え、長手方向及び短手方向の各側面を付加した図である。It is a figure which added each side of a longitudinal direction and a transverse direction in addition to the upper surface. 第5実施形態の概略構成を示す説明図である。It is explanatory drawing which shows schematic structure of 5th Embodiment. 磁場の印加前における表面上の様子を示す図である。It is a figure which shows the mode on the surface in front of the application of a magnetic field. 磁場の印加後における表面上の様子を示す図である。It is a figure which shows the mode on the surface after the application of a magnetic field. 第6実施形態の概略構成を示す説明図である。It is explanatory drawing which shows schematic structure of 6th Embodiment. 磁場の印加前における表面上の様子を示す図である。It is a figure which shows the mode on the surface in front of the application of a magnetic field. 磁場の印加後における表面上の様子を示す図である。It is a figure which shows the mode on the surface after the application of a magnetic field. 第7実施形態の概略構成を示す説明図である。It is explanatory drawing which shows schematic structure of 7th Embodiment. 第2磁場印加部の移動前における表面上の様子を示す図である。It is a figure which shows the mode on the surface in front of the movement of a 2nd magnetic field application part. 第2磁場印加部の移動後における表面上の様子を示す図である。It is a figure which shows the mode on the surface after the movement of a 2nd magnetic field application part.

(目的物質検出チップ)
本発明の目的物質検出チップは、光透過性基板を有し、必要に応じて、電場増強層、凹凸構造付与層を有する。
(Target substance detection chip)
The target substance detection chip of the present invention has a light transmitting substrate, and as necessary, an electric field enhancing layer and a concavo-convex structure providing layer.

<光透過性基板>
前記光透過性基板は、光を透過させる部材である。
前記光透過性基板としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、ガラス基板やプラスチック基板等の公知の光透過性基板を用いることができる。
また、前記光透過性基板に凹凸面を形成する場合、前記凹凸面の形成方法としては、特に制限はなく、射出成型法、ナノインプリント法、エッチング法等の公知の方法を挙げることができる。
なお、本明細書において、「光透過性」とは、可視光透過率が0.5%以上であることを示す。
<Light transmission substrate>
The light transmitting substrate is a member that transmits light.
There is no restriction | limiting in particular as said transparent substrate, According to the objective, it can select suitably, For example, well-known transparent substrates, such as a glass substrate and a plastic substrate, can be used.
Moreover, when forming an uneven surface in the said transparent substrate, there is no restriction | limiting in particular as a formation method of the said uneven surface, Well-known methods, such as an injection molding method, a nanoimprint method, an etching method, can be mentioned.
In the present specification, “light transmissive” indicates that the visible light transmittance is 0.5% or more.

<電場増強層>
前記電場増強層は、一の面に全反射条件で光が照射されたとき他の面上に増強電場が形成される層である。
前記電場増強層としては、特に制限はなく、目的に応じて適宜選択することができ、公知の表面プラズモン励起層及び導波モード励起層を適用することができる。
<Field enhancement layer>
The electric field enhancing layer is a layer in which an enhancing electric field is formed on another surface when light is irradiated to one surface under total reflection conditions.
There is no restriction | limiting in particular as said electric field enhancement layer, According to the objective, it can select suitably, A well-known surface plasmon excitation layer and a waveguide mode excitation layer can be applied.

前記表面プラズモン励起層としては、例えば、金、銀、プラチナ及びアルミニウムの少なくともいずれかを含む金属層が挙げられる。
前記金属層では、前記一の面に照射される前記光によって前記他の面上に表面プラズモン共鳴が励起され、前記他の面上に前記増強電場が得られる。
前記金属層の厚みとしては、構成材料及び照射する光の波長によって最適値が決定されるが、この値は、フレネルの式を用いた計算から算出可能であることが知られている。一般に、近紫外から近赤外域で前記表面プラズモン共鳴を励起させる場合、前記金属層の厚みは、数nm〜数十nmとなる。
Examples of the surface plasmon excitation layer include metal layers containing at least one of gold, silver, platinum and aluminum.
In the metal layer, surface plasmon resonance is excited on the other surface by the light irradiated to the one surface, and the enhanced electric field is obtained on the other surface.
As the thickness of the metal layer, an optimum value is determined according to the constituent material and the wavelength of light to be irradiated, but it is known that this value can be calculated from calculation using the Fresnel equation. In general, when the surface plasmon resonance is excited in the near ultraviolet to near infrared region, the thickness of the metal layer is several nm to several tens nm.

前記金属層の形成方法としては、特に制限はなく、蒸着法、スパッタリング法、CVD法、PVD法、スピンコート法等の公知の形成方法が挙げられるが、前記光透過性基板の形成材料がプラスチック材料やガラス材料である場合、前記金属層を直接、前記光透過性部材上に形成すると、密着性が低くなり、簡単にはがれてしまうことがある。
そのため、密着性を向上させる観点から、前記光透過性基板の面上にニッケルやクロムを形成材料とする接着層を形成し、この接着層上に前記金属層を形成することが好ましい。
The method of forming the metal layer is not particularly limited, and known methods such as vapor deposition, sputtering, CVD, PVD, spin coating, etc. may be mentioned, but the material for forming the light transmitting substrate is plastic In the case of a material or a glass material, if the metal layer is formed directly on the light transmitting member, the adhesion may be lowered and it may be easily peeled off.
Therefore, from the viewpoint of improving adhesion, it is preferable to form an adhesive layer made of nickel or chromium on the surface of the light transmitting substrate, and to form the metal layer on the adhesive layer.

目的物質又は前記目的物質を標識化する標識物質からの発光を観察する場合、前記目的物質及び前記標識物質が、前記金属層に近接すると、前記目的物質及び前記蛍光物質等が励起光から得たエネルギーが前記金属層に移行し、発光効率が低下するクエンチングと呼ばれる現象が生ずる場合がある。
この場合、前記目的物質及び前記標識物質を前記金属層の表面から離間させる目的で、前記金属層の表面上に被覆層を形成すると、前記クエンチングが抑制され、発光効率の低下を抑制することができる。
前記被覆層としては、特に制限はなく、シリカガラス等のガラス材料、有機高分子材料等で形成される厚みが数nm〜数十nmの透明な層により形成することができる。
When light emission from the target substance or the labeling substance for labeling the target substance is observed, when the target substance and the labeling substance are in proximity to the metal layer, the target substance and the fluorescent substance are obtained from the excitation light Energy may be transferred to the metal layer to cause a phenomenon called quenching in which the luminous efficiency is reduced.
In this case, if a covering layer is formed on the surface of the metal layer for the purpose of separating the target substance and the labeling substance from the surface of the metal layer, the quenching is suppressed and the decrease in light emission efficiency is suppressed. Can.
There is no restriction | limiting in particular as said coating layer, It can form with the transparent material of several nm-several dozen nm thickness formed with glass materials, such as a silica glass, an organic polymer material, etc.

前記導波モード励起層としては、特に制限はなく、金属材料又は半導体材料で形成される薄膜層と、光透過性誘電材料で形成される誘電体層との積層体が挙げられる。
前記導波モード励起層では、前記一の面に照射される前記光によって前記誘電体層内に前記導波モードが励起され、前記他の面上に前記増強電場が得られる。
なお、前記導波モード励起層では、前記薄膜層が前記一の面側の層を構成し、前記誘電体層が前記他の面側を構成する。
There is no restriction | limiting in particular as said waveguide mode excitation layer, The laminated body of the thin film layer formed with a metal material or a semiconductor material, and the dielectric material layer formed with a transparent dielectric material is mentioned.
In the waveguide mode excitation layer, the light irradiated to the one surface excites the waveguide mode in the dielectric layer, and the enhanced electric field is obtained on the other surface.
In the waveguide mode excitation layer, the thin film layer constitutes a layer on the one surface side, and the dielectric layer constitutes the other surface side.

前記金属材料としては、特に制限はなく、例えば、金、銀、銅、プラチナ、アルミニウム等が挙げられる。
また、前記半導体材料としては、特に制限はなく、例えば、シリコン、ゲルマニウム等の半導体材料又は既知の化合物半導体材料が挙げられるが、中でも、安価で加工が容易なシリコンが好ましい。
前記薄膜層の厚みとしては、前記表面プラズモン励起層と同様で、構成材料及び照射する光の波長によって最適値が決定されるとともに、この値は、フレネルの式を用いた計算から算出可能であることが知られている。一般に、近紫外から近赤外域の波長帯の光を使用する場合、前記薄膜層の厚みは、数nm〜数百nmとなる。
There is no restriction | limiting in particular as said metal material, For example, gold | metal | money, silver, copper, platinum, aluminum etc. are mentioned.
The semiconductor material is not particularly limited, and examples thereof include semiconductor materials such as silicon and germanium or known compound semiconductor materials. Among these, silicon is preferable because of low cost and easy processing.
The thickness of the thin film layer is the same as that of the surface plasmon excitation layer, and the optimum value is determined by the constituent material and the wavelength of the light to be irradiated, and this value can be calculated from the calculation using the Fresnel equation. It is known. In general, when light in a wavelength band of near ultraviolet to near infrared is used, the thickness of the thin film layer is several nm to several hundreds nm.

前記光透過性誘電材料としては、特に制限はなく、例えば、酸化シリコン、窒化シリコン、アクリル樹脂等の樹脂材料、酸化チタン等の金属酸化物、窒化アルミニウム等の金属窒化物が挙げられるが、作製が容易で、化学的安定性が高い酸化シリコンが好ましい。
なお、前記薄膜層及び前記誘電体層の形成方法としては、材料に応じて公知の形成方法から適宜選択することができる。
The light transmitting dielectric material is not particularly limited, and examples thereof include resin materials such as silicon oxide, silicon nitride and acrylic resin, metal oxides such as titanium oxide, and metal nitrides such as aluminum nitride. It is preferable to use silicon oxide which is easy to use and has high chemical stability.
In addition, as a formation method of the said thin film layer and the said dielectric material layer, it can select suitably from the well-known formation method according to material.

<凹凸構造付与層>
前記凹凸構造付与層は、前記光透過性を有するとともに一の面が凹凸面とされる層である。
前記凹凸構造付与層の形成材料としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、アクリル樹脂、ポリエステル樹脂、ポリオレフィン樹脂、汎用プラスチック、エンジニアリングプラスチック、スーパーエンジニアリングプラスチック、合成高分子樹脂、天然樹脂、紫外線硬化性樹脂、熱硬化性樹脂、熱可塑性樹脂等の公知の光透過性材料を用いることができる。
また、前記凹凸面の形成方法としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、エッチング法、電子線描画法、レーザー描画法、レーザー干渉法、切削法、自己組織化法等の公知の形成方法が挙げられる。加えて、前記形成方法で賦形したものを型、版として使用し、型、版に溶融した各種材料を流し込み、硬化した後に剥離することで型、版の凹凸を転写する方法等を挙げることができる。
<Convex-convex structure application layer>
The said uneven | corrugated structure provision layer is a layer which has the said light transmittance | permeability, and makes one surface an uneven surface.
There is no restriction | limiting in particular as a forming material of the said uneven structure provision layer, According to the objective, it can select suitably, For example, an acrylic resin, polyester resin, polyolefin resin, general purpose plastics, engineering plastics, super engineering plastics, synthetic high Known light transmitting materials such as molecular resin, natural resin, ultraviolet curable resin, thermosetting resin, thermoplastic resin and the like can be used.
The method of forming the uneven surface is not particularly limited and may be appropriately selected according to the purpose. For example, etching method, electron beam drawing method, laser drawing method, laser interference method, cutting method, self-organization Known formation methods such as In addition, a method of transferring asperities of the mold and the plate by using the material formed by the above-mentioned forming method as a mold and a plate, pouring the molten various materials into the mold and the plate, curing after peeling is mentioned. Can.

<層構成>
前記目的物質検出チップとしては、前記光透過性基板自身で構成されるか、前記光透過性基板上に前記凹凸構造付与層が積層されるか、前記光透過性基板上に前記電場増強層が積層されるか、前記光透過性基板上に前記電場増強層及び前記凹凸構造付与層が積層されて構成される。
前記目的物質検出チップにおいて前記電場増強層が形成されない場合には、前記凹凸構造が形成される面と反対の面を裏面として前記裏面側から光が全反射条件で照射されたときにエバネッセント場が表面上に存在可能とされる。
また、前記目的物質検出チップにおいて前記電場増強層が形成される場合には、前記裏面側から前記光が全反射条件で照射されたときに前記増強電場が表面上に存在可能とされる。
なお、具体的な層構成の例については、図面とともに後述する。
<Layer composition>
The target substance detection chip may be constituted by the light transmitting substrate itself, or the uneven structure imparting layer may be laminated on the light transmitting substrate, or the electric field enhancing layer may be formed on the light transmitting substrate. Alternatively, the electric field enhancing layer and the concavo-convex structure imparting layer may be laminated on the light transmitting substrate.
In the case where the electric field enhancing layer is not formed in the target substance detection chip, an evanescent field is generated when light is irradiated from the back surface side on the back surface side with the surface opposite to the surface on which the uneven structure is formed as the back surface. It is possible to exist on the surface.
In the case where the electric field enhancing layer is formed in the target substance detection chip, the enhanced electric field can be present on the surface when the light is irradiated from the back surface side under total reflection conditions.
A specific example of the layer configuration will be described later with reference to the drawings.

<凹凸構造>
前記目的物質検出チップは、前記目的物質に少なくとも磁性粒子が結合して形成された結合体の吸着を抑制することを目的として、複数の凸部を周期的に配して構成される凹凸構造を前記表面に有するように形成される。
前記凹凸構造は、前記光透過性基板及び前記凹凸構造付与層のいずれかに形成される凹凸面に基づいて形成される。
Irregular structure
The target substance detection chip has a concavo-convex structure configured by periodically arranging a plurality of convex portions for the purpose of suppressing adsorption of a combined body formed by binding at least magnetic particles to the target substance. It is formed to have on the surface.
The said uneven structure is formed based on the uneven surface formed in either of the said transparent substrate and the said uneven | corrugated structure provision layer.

前記凸部の形状としては、特に制限はなく、短軸方向の断面視で角柱状、台形状、半円状、半楕円状等の任意の形状とすることができる。
前記凹凸構造としては、特に制限はないが、例えば、前記結合体が直径1μm程度であると見積もられる場合には、全体又は一部が、凸部の高さが1μm〜1.55μmとされるとともに隣接する前記凸部間のピッチ間隔が0.45μm〜0.55μmの小間隔及び1.45μm〜1.55μmの大間隔のいずれかとされる周期構造とされることが好ましい。
なお、前記凹凸構造の具体的な例については、図面とともに後述する。
There is no restriction | limiting in particular as a shape of the said convex part, It can be set as arbitrary shapes, such as prismatic shape, trapezoid shape, semicircle shape, semielliptical shape, by the cross sectional view of the minor axis direction.
The concavo-convex structure is not particularly limited. For example, when it is estimated that the combined body has a diameter of about 1 μm, the height of the convex part is 1 μm to 1.55 μm in whole or in part. In addition, it is preferable that a periodic structure in which the pitch interval between adjacent convex portions is either a small interval of 0.45 μm to 0.55 μm or a large interval of 1.45 μm to 1.55 μm.
In addition, the specific example of the said uneven structure is later mentioned with drawing.

[第1実施形態]
本発明の第1実施形態について図面を参照しつつ説明する。なお、第1実施形態は、本発明の目的物質検出チップに係る実施形態である。
図1に示すように、目的物質検出チップ1は、光透過性基板2と、凹凸構造付与層3とを有する。なお、図1は、第1実施形態の概略構成を示す説明図である。
光透過性基板2は、平滑面を有し、前記平滑面上に凹凸構造付与層3が積層される。
なお、光透過性基板2は、前記平滑面を底とする函状体を形成するように側壁部が形成され、前記函状体内を液体貯留部として目的物質の存在を検証する液体試料を貯留させるように構成されてもよい。
また、本明細書において、平滑とは、光学的に平滑であることを意味し、平滑とされる面の面精度がλ/2以下であることを意味する。
First Embodiment
A first embodiment of the present invention will be described with reference to the drawings. The first embodiment is an embodiment according to the target substance detection chip of the present invention.
As shown in FIG. 1, the target substance detection chip 1 has a light transmitting substrate 2 and a concavo-convex structure providing layer 3. FIG. 1 is an explanatory view showing a schematic configuration of the first embodiment.
The light transmitting substrate 2 has a smooth surface, and the concavo-convex structure providing layer 3 is stacked on the smooth surface.
The light transmitting substrate 2 has a side wall portion so as to form a box-like body having the smooth surface as the bottom, and the box-like body is used as a liquid storage portion to store a liquid sample for verifying the presence of the target substance. It may be configured to
Further, in the present specification, “smooth” means optically smooth, and means that the surface precision of the surface to be smooth is λ / 2 or less.

凹凸構造付与層3は、光透過性基板2上に積層されるとともに光透過性基板2側の面と反対の面が凹凸面とされる。なお、凹凸構造付与層3としては、特に制限はないが、粘着、接着、融着又は貼合等により光透過性基板2上に固定される。   The concavo-convex structure imparting layer 3 is laminated on the light transmitting substrate 2 and a surface opposite to the surface on the light transmitting substrate 2 side is a concavo-convex surface. In addition, there is no restriction | limiting in particular as an uneven | corrugated structure provision layer 3, It fixes on the transparent substrate 2 by adhesion, adhesion | attachment, melt | fusion, bonding etc.

目的物質検出チップ1では、凹凸構造付与層3の前記凹凸面により凹凸構造が表面に形成される。
また、目的物質検出チップ1では、光透過性基板2上に凹凸構造付与層3が積層された構造とされ、前記凹凸構造が形成される面と反対の面を裏面として前記裏面側から凹凸構造付与層3に対し前記光が全反射条件で照射されたときに前記エバネッセント場が表面近傍に存在可能とされる。
In the target substance detection chip 1, a concavo-convex structure is formed on the surface by the concavo-convex surface of the concavo-convex structure providing layer 3.
The target substance detection chip 1 has a structure in which the concavo-convex structure application layer 3 is stacked on the light transmitting substrate 2, and the concavo-convex structure is viewed from the back surface side with the surface opposite to the surface on which the concavo-convex structure is formed. When the light is irradiated to the application layer 3 under total reflection conditions, the evanescent field can be present near the surface.

前記凹凸構造は、前記表面上に導入される前記液体試料中の前記結合体が前記表面に吸着することを抑制する役割を有し、複数の凸部が周期的に配されて構成される。この凹凸構造により前記結合体の吸着が抑制される様子を図2(a),(b)を参照しつつ説明する。なお、図2(a),(b)は、前記凹凸構造により前記結合体の吸着が抑制される様子を説明する説明図である。   The uneven structure has a role of suppressing adsorption of the combined body in the liquid sample introduced onto the surface to the surface, and a plurality of convex portions are periodically arranged. A state in which the adsorption of the combined body is suppressed by this uneven structure will be described with reference to FIGS. 2 (a) and 2 (b). 2 (a) and 2 (b) are explanatory diagrams for explaining how adsorption of the combined body is suppressed by the concavo-convex structure.

図2(a)に示すように、前記凹凸構造は、隣接する前記凸部間のピッチ間隔Pが、結合体Mの粒子径Rに対して、9/20R〜11/20Rの長さ、即ち、結合体Mの粒子径Rよりも小間隔で設定される。また、前記凸部の高さHが、結合体Mの粒子径Rに対して、1R〜2μmの長さに設定され、前記凸部の幅Wが、結合体Mの粒子径Rに対して、9/20R〜3/2Rの長さに設定される。
このような凹凸構造を有すると、接触面積を減らし,付着仕事量を小さくすることにより、目的物質検出チップ1の前記表面(凹凸構造付与層3の前記凹凸面)に結合体Mが吸着することを抑制することができる。
ここで、前記磁場の印加に伴う前記目的物質の移動観察を行う観点から、結合体Mとして、例えば直径1μm程度の球状と見なせる場合において好適に用いることができる。このような例としては、大きさが数nmのタンパク質を前記目的物質とし、前記標識物質として大きさ数nmの蛍光色素を用い、前記磁気微粒子として粒子径1μmの磁性粒子を用いた場合が挙げられる。この例では、前記目的物質や前記標的物質は、前記磁気微粒子の100分の1以下の大きさであり、よって、結合体Mは粒子径1μmの球と見なすことができ、前記凹凸構造が形成されることで、目的物質検出チップ1の利便性を向上させることができる。
このような例の場合、ピッチ間隔Pとしては、0.45μm〜0.55μmが好ましく、高さHとしては、1μm〜1.55μmが好ましく、幅Wとしては、としては、0.45μm〜1.5μmが好ましい。
As shown in FIG. 2 (a), the relief structure, the pitch spacing P 1 between the convex portions adjacent to each, to the particle diameter R of the conjugate M, 9 / 20R~11 / 20R length of, That is, the distance is set smaller than the particle diameter R of the combined body M. Further, the height H of the convex portion is set to a length of 1 R to 2 μm with respect to the particle diameter R of the combined body M, and the width W of the convex portion with respect to the particle diameter R of the combined body M , 9 / 20R to 3 / 2R are set.
Having such a concavo-convex structure reduces the contact area and reduces the work of adhesion, whereby the conjugate M is adsorbed to the surface of the target substance detection chip 1 (the concavo-convex surface of the concavo-convex structure imparting layer 3). Can be suppressed.
Here, from the viewpoint of performing movement observation of the target substance accompanying the application of the magnetic field, it can be suitably used in the case where it can be regarded as, for example, a sphere having a diameter of about 1 μm as the combined body M. As such an example, a case where a protein of several nm in size is used as the target substance, a fluorescent dye of several nm in size is used as the labeling substance, and magnetic particles of 1 μm in particle diameter are used as the magnetic fine particles is mentioned. Be In this example, the target substance and the target substance have a size equal to or smaller than one-hundredth of the size of the magnetic fine particles, and thus the conjugate M can be regarded as a sphere having a particle diameter of 1 μm, and the uneven structure is formed By doing this, the convenience of the target substance detection chip 1 can be improved.
In the case of such an example, the pitch interval P1 is preferably 0.45 μm to 0.55 μm, the height H is preferably 1 μm to 1.55 μm, and the width W is preferably 0.45 μm to 1.5 μm is preferred.

図2(a)に示す例では、ピッチ間隔Pを結合体Mの粒子径Rよりも小間隔としたが、図2(b)に示すように、ピッチ間隔Pを結合体Mの粒子径Rに対して、29/20R〜31/20Rの長さ、即ち、結合体Mの粒子径Rよりも大間隔で設定してもよい。また、ピッチ間隔Pとしては、直径1μm程度の結合体を検出することを想定して、1.45μm〜1.55μmが好ましい。
このような凹凸構造を有すると、結合体1つが付着し安定する可能性があるが、複数個が付着して安定、凝集するための付着仕事量を小さくすることにより、前記目的物質検出チップ1の前記表面(凹凸構造付与層3’の前記凹凸面)に結合体Mが吸着することを抑制することができる。
なお、高さH及び幅Wについては、図2(a)を用いた説明と同様である。
また、図2(a),(b)では、前記凸部の形状を断面四角柱状として説明したが、前記凸部の形状としては、断面台形状、半円状、半楕円状等の任意の形状とすることができ、これらの形状におけるピッチ間隔P、高さH及び幅Wについては、それぞれ最大となる長さで、前記設定を適用することができる。
In the example shown in FIG. 2 (a), it was smaller interval than the particle size R of the coupling body M the pitch P 1, as shown in FIG. 2 (b), the particles of the conjugate M the pitch interval P 1 With respect to the diameter R, the lengths of 29 / 20R to 31 / 20R, that is, the particle diameter R of the combined body M may be set larger. As the pitch P 1, on the assumption that the detection conjugate having a diameter of about 1 [mu] m, 1.45Myuemu~1.55Myuemu are preferred.
When such a concavo-convex structure is provided, one combined body may be attached and stabilized, but the target substance detection chip 1 is obtained by reducing the amount of work of adhesion for a plurality of attached and stable, and aggregated. It can suppress that the coupling body M adsorb | sucks to the said surface (The said uneven surface of uneven | corrugated structure provision layer 3 ') of the.
The height H and the width W are the same as those described with reference to FIG.
Moreover, although the shape of the said convex part was demonstrated as cross-sectional square pillar shape in FIG. 2 (a), (b), as a shape of the said convex part, arbitrary shapes, such as cross-sectional trapezoidal shape, semicircle shape, semielliptical shape, etc. The settings can be applied to the pitches P 1 , the height H and the width W in these shapes with the maximum length.

以上のように第1実施形態に係る目的物質検出チップ1では、前記凹凸構造により、前記結合体の吸着を抑制することができる。
また、第1実施形態に係る目的物質検出チップ1では、前記表面上への前記磁場の印加を規制することがなく、前記結合体の移動が可能であることから、前記磁性粒子を用いた目的物質の検出に用いることができ、適用される目的物質検出装置を小型でかつ低コストに製造することが可能とされる。
As described above, in the target substance detection chip 1 according to the first embodiment, the adsorption of the combined body can be suppressed by the uneven structure.
Moreover, in the target substance detection chip 1 according to the first embodiment, the application of the magnetic field onto the surface is not restricted, and the movement of the combined body is possible. It can be used to detect substances, and the target substance detection device to be applied can be manufactured in a small size and at low cost.

なお、第1実施形態に係る目的物質検出チップ1では、光透過性基板2上に凹凸構造付与層3が積層された構造とされるが、光透過性基板2自身に凹凸構造付与層3における前記凹凸面と同様の凹凸面を形成することで、光透過性基板自身により目的物質検出チップを構成することができる。
[第2実施形態]
本発明の第2実施形態について図面を参照しつつ説明する。なお、第2実施形態は、本発明の目的物質検出チップに係る実施形態である。
図3に示すように、目的物質検出チップ10は、光透過性基板12と、凹凸構造付与層13と、電場増強層14とを有する。なお、図3は、第2実施形態の概略構成を示す説明図である。
The target substance detection chip 1 according to the first embodiment has a structure in which the concavo-convex structure imparting layer 3 is laminated on the light transmitting substrate 2, but in the light transmissible substrate 2 itself, the concavo-convex structure imparting layer 3 is By forming the uneven surface similar to the uneven surface, it is possible to configure the target substance detection chip from the light transmitting substrate itself.
Second Embodiment
A second embodiment of the present invention will be described with reference to the drawings. The second embodiment is an embodiment according to the target substance detection chip of the present invention.
As shown in FIG. 3, the target substance detection chip 10 has a light transmitting substrate 12, a concavo-convex structure providing layer 13, and an electric field enhancing layer 14. FIG. 3 is an explanatory view showing a schematic configuration of the second embodiment.

光透過性基板12は、平滑面を有し、前記平滑面上に電場増強層14が積層される。また、光透過性基板12は、前記平滑面を底とする函状体を形成するように側壁部が形成され、前記函状体内を液体貯留部15として目的物質の存在を検証する液体試料を貯留させるように構成される。   The light transmitting substrate 12 has a smooth surface, and the electric field enhancing layer 14 is stacked on the smooth surface. Further, the light transmitting substrate 12 is formed with a side wall portion so as to form a box having the above-mentioned smooth surface at the bottom, and a liquid sample for verifying the presence of the target substance as the liquid reservoir 15 in the box. It is configured to be stored.

電場増強層14は、一の面から全反射条件で光が照射されたときに他の面上に増強電場が形成される層であり、光透過性基板12の前記平滑面上に積層される平滑な層とされる。なお、電場増強層14は、公知の表面プラズモン励起層及び導波モード励起層に準じて構成される。
凹凸構造付与層13は、電場増強層14上に積層されるとともに電場増強層14側の面と反対の面が凹凸面とされる。なお、凹凸構造付与層13としては、特に制限はないが、粘着、接着、融着又は貼合等により電場増強層14上に固定される。なお、電場増強層14として公知の表面プラズモン励起層を用いる場合、前記増強電場が目的物質検出チップ10の表面近傍に存在可能とされるには、凹凸構造付与層13は前記増強電場が前記表面に到達する程度に薄い必要がある。従って、この場合には、凹凸構造付与層13の最も薄い部分、つまり凸部が形成されていない部分の厚さは、200nm以下であることが好ましい。このような薄い凹凸構造付与層13を形成するには、電場増強層14上にレジストを塗布し、レジストを露光後現像して凹凸構造を付与する手法が好ましい。一方、電場増強層14として公知の導波モード励起層を用いる場合、凹凸構造付与層13が電場増強層14における前記誘電体層と一体となって導波路層を形成するため、凹凸構造付与層13の厚さには特に制限はなく、前記増強電場を目的物質検出チップ10の表面近傍に存在可能とされる。
The electric field enhancement layer 14 is a layer in which an enhanced electric field is formed on the other surface when light is irradiated from one surface under total reflection conditions, and is laminated on the smooth surface of the light transmitting substrate 12. It is a smooth layer. The electric field enhancing layer 14 is configured according to a known surface plasmon excitation layer and a waveguide mode excitation layer.
The concavo-convex structure imparting layer 13 is stacked on the electric field enhancing layer 14 and a surface opposite to the surface on the electric field enhancing layer 14 side is a concavo-convex surface. The concavo-convex structure imparting layer 13 is not particularly limited, but is fixed on the electric field enhancing layer 14 by adhesion, adhesion, fusion, or bonding. When the surface plasmon excitation layer known as the electric field enhancing layer 14 is used, the concavo-convex structure providing layer 13 has the enhancing electric field on the surface so that the enhancing electric field can be present in the vicinity of the surface of the target substance detection chip 10. Need to be thin enough to reach Therefore, in this case, it is preferable that the thickness of the thinnest portion of the concavo-convex structure providing layer 13, that is, the portion where the convex portion is not formed is 200 nm or less. In order to form such a thin concavo-convex structure imparting layer 13, it is preferable to apply a resist on the electric field enhancing layer 14 and develop the resist after exposure to give a concavo-convex structure. On the other hand, in the case of using a known waveguide mode excitation layer as the electric field enhancing layer 14, the concavo-convex structure providing layer 13 is integrated with the dielectric layer in the electric field enhancing layer 14 to form a waveguide layer. There is no particular limitation on the thickness 13, and the enhanced electric field can be present near the surface of the target substance detection chip 10.

目的物質検出チップ10では、最表層を構成する凹凸層付与層13の前記凹凸面により凹凸構造が前記表面に形成される。
また、目的物質検出チップ10では、光透過性基板12上に電場増強層14と凹凸構造付与層13とがこの順で積層された構造とされ、前記凹凸構造が形成される面と反対の面を裏面として前記裏面側から電場増強層の前記一の面に対し前記光が全反射条件で照射されたときに前記増強電場が表面近傍に存在可能とされる。なお、上述のように、電場増強層14として公知の導波モード励起層を用いる場合、凹凸構造付与層13が電場増強層14における前記誘電体層と一体となって導波路層を形成するため、前記光が全反射される面は、凹凸構造付与層13の表面となる。
In the target substance detection chip 10, a concavo-convex structure is formed on the surface by the concavo-convex surface of the concavo-convex layer providing layer 13 constituting the outermost layer.
Further, in the target substance detection chip 10, the electric field enhancing layer 14 and the concavo-convex structure imparting layer 13 are stacked in this order on the light transmitting substrate 12, and the surface opposite to the surface on which the concavo-convex structure is formed. When the light is irradiated from the back surface side to the one surface of the electric field enhancing layer from the back surface side under total reflection conditions, the enhanced electric field can be present in the vicinity of the surface. As described above, in the case of using a known waveguide mode excitation layer as the electric field enhancing layer 14, the concavo-convex structure providing layer 13 is integrated with the dielectric layer in the electric field enhancing layer 14 to form a waveguide layer. The surface on which the light is totally reflected is the surface of the concavo-convex structure providing layer 13.

以上のように第2実施形態に係る目的物質検出チップ10では、前記凹凸構造により、前記結合体の吸着を抑制することができる。
また、第2実施形態に係る目的物質検出チップ10では、前記表面上への前記磁場の印加を規制することがなく、前記結合体の移動が可能であることから、前記磁性粒子を用いた目的物質の蛍光観察に用いることができ、適用される目的物質検出装置を小型でかつ低コストに製造することが可能とされる。
なお、これ以外の事項は、目的物質検出チップ1と同様であるため、重複した説明を省略する。
As described above, in the target substance detection chip 10 according to the second embodiment, the adsorption of the combined body can be suppressed by the uneven structure.
Further, in the target substance detection chip 10 according to the second embodiment, the application of the magnetic field onto the surface is not restricted, and the movement of the combined body is possible. It can be used for fluorescence observation of substances, and the target substance detection device to be applied can be manufactured in a small size and at low cost.
The other matters are the same as those of the target substance detection chip 1, and therefore, the redundant description will be omitted.

[第3実施形態]
本発明の第3実施形態について図面を参照しつつ説明する。なお、第3実施形態は、本発明の目的物質検出チップに係る実施形態である。
図4に示すように、目的物質検出チップ20は、光透過性基板22と、凹凸構造付与層23と、電場増強層24とを有し、光透過性基板22には、任意の構成として液体貯留部25が形成される。なお、図4は、第3実施形態の概略構成を示す説明図である。
Third Embodiment
A third embodiment of the present invention will be described with reference to the drawings. The third embodiment is an embodiment according to the target substance detection chip of the present invention.
As shown in FIG. 4, the target substance detection chip 20 has a light transmitting substrate 22, a concavo-convex structure imparting layer 23, and an electric field enhancing layer 24, and the light transmitting substrate 22 has a liquid as an optional configuration. Reservoir 25 is formed. FIG. 4 is an explanatory view showing a schematic configuration of the third embodiment.

目的物質検出チップ20では、目的物質検出チップ10と異なり、光透過性基板22上に凹凸構造付与層23が形成されるとともに凹凸構造付与層23上に電場増強層24が形成される。
即ち、目的物質検出チップ20では、平滑面を有する光透過性基板22と、光透過性基板22の前記平滑面上に積層されるとともに光透過性基板22側の面と反対の面が第1凹凸面とされる凹凸構造付与層23と、凹凸構造付与層23の前記第1凹凸面上に積層されるとともに凹凸構造付与層23側の面と反対の面が前記第1凹凸面の凹凸パターンが転写された形状の第2凹凸面とされる電場増強層24とで構成され、前記第2凹凸面で凹凸構造が形成される。
なお、凹凸構造付与層23としては、特に制限はないが、粘着、接着、融着又は貼合等より光透過性基板22上に固定される。
In the target substance detection chip 20, unlike the target substance detection chip 10, the concavo-convex structure imparting layer 23 is formed on the light transmitting substrate 22 and the electric field enhancing layer 24 is formed on the concavo-convex structure imparting layer 23.
That is, in the target substance detection chip 20, the light transmitting substrate 22 having a smooth surface, and the surface that is stacked on the smooth surface of the light transmitting substrate 22 and opposite to the surface on the light transmitting substrate 22 side is The concavo-convex structure imparting layer 23, which is a concavo-convex surface, and the concavo-convex pattern of the first concavo-convex surface are laminated on the first concavo-convex surface of the concavo-convex structure imparting layer 23 And the electric field enhancing layer 24 which is a second concavo-convex surface of the transferred shape, and the concavo-convex structure is formed by the second concavo-convex surface.
The concavo-convex structure imparting layer 23 is not particularly limited, but is fixed on the light transmitting substrate 22 by adhesion, adhesion, fusion, or bonding.

凹凸構造付与層23における前記第1凹凸面は、凹凸構造付与層3(及び3’)における前記凹凸面と同様に形成される。
凹凸構造付与層23の前記第1凹凸面上に均一な厚みで電場増強層24を形成すると、前記第1凹凸面の凹凸パターンが転写された形状の前記第2凹凸面を電場増強層24に形成することができ、最表層を構成する電場増強層24の前記第2凹凸面により凹凸構造が表面に形成される。
The said 1st uneven surface in the uneven | corrugated structure provision layer 23 is formed similarly to the said uneven surface in the uneven | corrugated structure provision layer 3 (and 3 ').
When the electric field enhancing layer 24 is formed with a uniform thickness on the first uneven surface of the uneven structure imparting layer 23, the second uneven surface having the shape to which the uneven pattern of the first uneven surface is transferred is formed on the electric field enhancing layer 24. A concavo-convex structure can be formed on the surface by the second concavo-convex surface of the electric field enhancing layer 24 that can be formed and that forms the outermost layer.

このように構成される目的物質検出チップ20では、電場増強層24が最表層とされるため、目的物質検出チップ10における、電場増強層14から凹凸構造付与層13を介して前記表面上に形成される前記増強電場よりも、前記増強電場を前記表面上に広範囲で存在させることができ、前記増強電場における前記目的物質等の光信号観察を行い易い。
即ち、前記増強電場が及ぶ範囲は、電場増強層14及び電場増強層24のいずれにおいても400nm〜1,200nm程度離れた範囲までであり、これ以上離れると電場が急激に減衰することから、電場増強層24を最表層として前記増強電場を前記表面上に広範囲で存在させる目的物質検出チップ20では、前記増強電場による前記目的物質等の検出範囲を目的物質検出チップ10と比べて広く設定することができる。
なお、これ以外の事項は、目的物質検出チップ10と同様であるため、重複した説明を省略する。
In the target substance detection chip 20 configured as described above, since the electric field enhancement layer 24 is the outermost layer, the target substance detection chip 10 is formed on the surface from the electric field enhancement layer 14 through the concavo-convex structure imparting layer 13. The enhanced electric field can be present in a wider range on the surface than the enhanced electric field, and it is easier to observe an optical signal of the target substance or the like in the enhanced electric field.
That is, the range to which the enhanced electric field extends is a range separated by about 400 nm to about 1,200 nm in both the electric field enhancing layer 14 and the electric field enhancing layer 24. In the target substance detection chip 20 in which the enhanced electric field is present in a wide area on the surface with the enhancement layer 24 as the outermost layer, the detection range of the target substance or the like by the enhanced electric field is set wider than the target substance detection chip 10 Can.
The other matters are the same as those of the target substance detection chip 10, and therefore redundant description will be omitted.

[第4実施形態]
本発明の第4実施形態について図面を参照しつつ説明する。なお、第4実施形態は、本発明の目的物質検出チップに係る実施形態である。
図5に示すように、目的物質検出チップ30は、光透過性基板32と、電場増強層34とを有し、光透過性基板32には、液体貯留部35が形成される。なお、図5は、第4実施形態の概略構成を示す説明図である。
Fourth Embodiment
A fourth embodiment of the present invention will be described with reference to the drawings. The fourth embodiment is an embodiment according to the target substance detection chip of the present invention.
As shown in FIG. 5, the target substance detection chip 30 has a light transmitting substrate 32 and an electric field enhancing layer 34, and the liquid storing portion 35 is formed in the light transmitting substrate 32. FIG. 5 is an explanatory view showing a schematic configuration of the fourth embodiment.

目的物質検出チップ30では、目的物質検出チップ20と同様に電場増強層34が最表層とされるが、目的物質検出チップ20と異なり、光透過性基板32上に電場増強層34を積層させて構成される。
即ち、目的物質検出チップ30では、光透過性基板32自体に凹凸構造付与層3(及び3’)における前記凹凸面と同様の第1凹凸面を形成し、この前記第1凹凸面上に均一な厚みで電場増強層34を形成することで、前記第1凹凸面の凹凸パターンが転写された形状の前記第2凹凸面を電場増強層34に形成し、最表層を構成する電場増強層34の前記第2凹凸面により凹凸構造が表面に形成される。
なお、前記第1凹凸面を有する光透過性基板32は、凹凸構造付与層3(及び3’)の形成方法と同様の方法により形成することができる。
In the target substance detection chip 30, the electric field enhancement layer 34 is made the outermost layer similarly to the target substance detection chip 20, but unlike the target substance detection chip 20, the electric field enhancement layer 34 is laminated on the light transmitting substrate 32. Configured
That is, in the target substance detection chip 30, a first uneven surface similar to the uneven surface in the uneven structure imparting layer 3 (and 3 ') is formed on the light transmitting substrate 32 itself, and uniform on the first uneven surface. By forming the electric field enhancing layer 34 with a certain thickness, the second uneven surface having the shape to which the uneven pattern of the first uneven surface is transferred is formed in the electric field enhancing layer 34, and the electric field enhancing layer 34 constituting the outermost layer is formed. An uneven structure is formed on the surface by the second uneven surface.
The light transmitting substrate 32 having the first concavo-convex surface can be formed by the same method as the method of forming the concavo-convex structure providing layer 3 (and 3 ′).

このように構成される目的物質検出チップ30では、前記増強電場を前記表面上に広範囲で存在させることができ、前記増強電場における前記目的物質等の光信号観察を行い易いことに加え、凹凸構造付与層を配さない分、部品点数を減らしてより低コストに製造することができる。   In the target substance detection chip 30 configured in this manner, the enhanced electric field can be present in a wide range on the surface, and in addition to facilitating observation of the light signal of the target substance or the like in the enhanced electric field, Since the application layer is not provided, the number of parts can be reduced and the cost can be reduced.

[凹凸構造の形成例]
第1実施形態〜第4実施形態における前記凹凸構造について、更に好適な形成例を図面を参照しつつ説明する。
図6(a),(b)に示すように、凹凸構造形成例50は、複数の凸部51が平滑部52上に形成される。なお、図6(a)は、前記凹凸構造の形成例を示す斜視図であり、図6(b)は、前記凹凸構造の形成例を示す上面図である。
[Example of formation of uneven structure]
About the said uneven structure in 1st Embodiment-4th Embodiment, a further suitable example of formation is demonstrated, referring to drawings.
As shown in FIGS. 6A and 6B, in the example of the concavo-convex structure forming example 50, a plurality of convex portions 51 are formed on the smooth portion 52. 6 (a) is a perspective view showing an example of formation of the concavo-convex structure, and FIG. 6 (b) is a top view showing an example of formation of the concavo-convex structure.

凹凸構造形成例50では、複数の凸部51が2種類以上の形状で形成される。即ち、凹凸構造形成例では、凸部51が長手方向(図中の「Y」方向)の長さが異なる複数の形状で形成される。
また、複数の凸部51は、図7(a),(b)に一例を拡大して示すように、それぞれが2回回転対称形状及び線対称形状のいずれかとされる。なお、図7(a)は、1つの凸部を拡大して示す上面図であり、図7(b)は、上面に加え、長手方向及び短手方向の各側面を付加した図である。
In the concavo-convex structure forming example 50, the plurality of convex portions 51 are formed in two or more types of shapes. That is, in the example of the concavo-convex structure formation, the protrusions 51 are formed in a plurality of shapes having different lengths in the longitudinal direction (the “Y” direction in the drawing).
Each of the plurality of convex portions 51 has either a two-fold rotational symmetry shape or a line symmetry shape, as an example is shown enlarged in FIGS. 7A and 7B. 7 (a) is a top view showing one convex portion in an enlarged manner, and FIG. 7 (b) is a view in which each side surface in the longitudinal direction and the short direction is added to the upper surface.

複数の凸部51は、長手方向の長さが最も長いものが中央に配され、これを対称軸とみたてたときに、短手方向(図中の「X」方向)で隣接するものの長手方向の長さを前記中央に配されたものから離れる順に短くして3つずつ配された、上面視で菱形状の単位周期構造を有する。
また、複数の凸部51は、前記単位周期構造の長手方向の端部における長手方向の長さが最も短いものを、短手方向で隣接する他の前記単位周期構造と共有するように配されるとともに、一の前記単位周期構造における前記長手方向の長さが最も長いものが、長手方向で隣接する他の前記単位周期構造における前記長手方向の長さが最も短いものと対向するように配され、全体が複数の前記単位周期構造を周期的に配置させた周期構造を有する。
このように構成される凹凸構造形成例50では、個々の前記単位周期構造が自然界の魚類が有する鱗片とよく似た構造とされ、全体が鱗肌状とされることから、前記複数の凸部51が形成された表面上に前記結合体を含む異物の吸着を抑制することができる。
なお、本例では、前記単位周期構造を菱形状としたが、二等辺三角形状としてもよいし、平行四辺形状としてもよい。
また、凹凸構造形成例50により前記目的物質検出チップの前記凹凸構造を形成する場合には、前記凹凸面、前記第2凹凸面の下地となる前記第1凹凸面に凹凸構造形成例50の凹凸形状を適用すればよい。
また、凹凸構造形成例50における短手方向の長さは、図2(a),(b)を用いて説明した「幅W」に相当する。
また、凹凸構造形成例50の形成方法としては、特開2015−160342号公報に記載の事項を適用することができる。
As for the plurality of convex portions 51, those having the longest length in the longitudinal direction are disposed at the center, and when viewed from this as the axis of symmetry, the lengths of adjacent ones in the lateral direction ("X" direction in the figure) It has a rhombic unit periodic structure in top view, in which the length of the direction is shortened three in order in a direction away from the one disposed at the center.
Further, the plurality of convex portions 51 are arranged so as to share the shortest one in the longitudinal direction at the end in the longitudinal direction of the unit periodic structure with the other unit periodic structure adjacent in the lateral direction. Are arranged such that the longest length in the longitudinal direction in one of the unit period structures is opposed to the shortest length in the other adjacent unit period structures in the longitudinal direction. And the whole has a periodic structure in which a plurality of the unit periodic structures are periodically arranged.
In the example 50 of forming a concavo-convex structure configured as described above, each of the unit periodic structures is made to have a structure similar to the scaly flakes possessed by fish in the natural world, and the whole is made scaly. It is possible to suppress the adsorption of foreign matter including the above-mentioned combined body on the surface on which 51 is formed.
In the present example, the unit periodic structure is in the shape of a rhombus, but may be in the form of an isosceles triangle or in the form of a parallelogram.
When the uneven structure of the target substance detection chip is formed by the uneven structure forming example 50, the uneven structure forming example 50 is formed on the uneven surface and the first uneven surface serving as the base of the second uneven surface. The shape may be applied.
Further, the length in the short direction in the example 50 of forming the concavo-convex structure corresponds to the "width W" described using Figs. 2 (a) and 2 (b).
Moreover, as a formation method of uneven | corrugated structure formation example 50, the matter of Unexamined-Japanese-Patent No. 2015-160342 can be applied.

(目的物質検出装置)
本発明の目的物質検出装置は、本発明の前記目的物質検出チップと光照射部と磁場印加部とを備え、必要に応じて光検出部を有する。
前記目的物質検出装置では、前記目的物質と結合する前記磁性粒子を用いて前記目的物質を検出する。前記目的物質が前記エバネッセント場又は前記増強電場によって、蛍光や散乱光を生じにくい物質である場合に前記目的物質を標識化させるための標識物質が用いられる。
前記標識物質としては、特に制限はなく、前記目的物質と特異的に吸着ないし結合して前記目的物質を標識化する蛍光標識物質や光散乱物質が挙げられる。
前記蛍光標識物質としては、例えば、蛍光色素、量子ドット、蛍光染色剤等の公知の蛍光物質を用いることができる。
また、前記光散乱物質としては、例えば、ナノ粒子、例えばポリスチレンビーズや金ナノ粒子などの公知の光散乱物質を用いることができる。
なお、前記目的物質と前記標識物質との結合方法としては、特に制限はなく、物理吸着、抗原−抗体反応、DNAハイブリダイゼーション、ビオチン−アビジン結合、キレート結合、アミノ結合などの公知の結合方法を適用することができる。
(Target substance detection device)
The target substance detection device of the present invention comprises the target substance detection chip of the present invention, a light irradiation part, and a magnetic field application part, and has a light detection part as necessary.
The target substance detection device detects the target substance using the magnetic particles bound to the target substance. When the target substance is a substance which hardly generates fluorescence or scattered light by the evanescent field or the enhanced electric field, a labeling substance for labeling the target substance is used.
The labeling substance is not particularly limited, and examples thereof include a fluorescent labeling substance and a light scattering substance, which specifically adsorb or bind to the target substance to label the target substance.
As the fluorescent labeling substance, for example, known fluorescent substances such as fluorescent dyes, quantum dots, fluorescent stains and the like can be used.
Moreover, as said light-scattering substance, well-known light-scattering substances, such as a nanoparticle, for example, a polystyrene bead and a gold nanoparticle, can be used, for example.
The method for binding the target substance to the labeling substance is not particularly limited, and known binding methods such as physical adsorption, antigen-antibody reaction, DNA hybridization, biotin-avidin bond, chelate bond, amino bond and the like may be used. It can apply.

<光照射部>
前記光照射部は、前記目的物質検出チップの前記凹凸構造が形成される面と反対の面を裏面として前記裏面側から全反射条件で光を照射可能とされる。
前記光照射部の光源としては、特に制限はなく、目的に応じて適宜選択することができ、公知のランプ、LED、レーザー等が挙げられる。本発明では、前記目的物質検出チップの前記裏面側から全反射条件で光を照射することで前記表面にエバネッセント場又は増強電場を形成し、前記エバネッセント場又は前記増強電場を励起光とした前記目的物質及び前記磁性粒子を含む結合体から光信号を発生させる。そのため前記光照射部に求められる役割としては、前記目的物質検出チップの前記裏面側から全反射条件で光を照射することのみであり、このような役割を担うものであれば光源の選択に制限がない。
<Light irradiator>
The light irradiator is capable of emitting light under the condition of total reflection from the back surface side with the surface opposite to the surface on which the uneven structure of the target substance detection chip is formed as the back surface.
There is no restriction | limiting in particular as a light source of the said light irradiation part, According to the objective, it can select suitably, A well-known lamp, LED, a laser, etc. are mentioned. In the present invention, an evanescent field or an enhanced electric field is formed on the surface by irradiating light from the back side of the target substance detection chip under total reflection conditions, and the object wherein the evanescent field or the enhanced electric field is excitation light An optical signal is generated from the combination comprising the substance and the magnetic particles. Therefore, the role required of the light irradiation unit is only to irradiate light from the back surface side of the target substance detection chip under total reflection conditions, and selection of a light source is limited if it plays such a role. There is no

ランプ、LED等の放射光源を用いる場合には、前記目的物質検出チップの前記表面側からの照射光の漏れ出しを避けるため、放射される光のうち前記目的物質検出チップの前記裏面側に照射される全ての方位における光が全反射条件を満たす必要がある。こうしたことから、放射光源を用いる場合には、照射光の照射方向を特定の方位に規制するコリメートレンズ等の案内部を用いてもよい。
また、光信号として蛍光を用いる場合、蛍光を励起可能な波長を持つ単色光源を用いるか、または、ランプ、LED等の広い波長帯域を持つ光源からの光をバンドパスフィルタ等の光学フィルタを透過させて単色化し、蛍光を励起可能な波長のみを取り出した後に前記目的物質検出チップの前記裏面側から照射することが好ましい。
When a radiation light source such as a lamp or an LED is used, the back surface side of the target substance detection chip is irradiated with the emitted light to avoid leakage of the irradiation light from the surface side of the target substance detection chip. It is necessary for the light in all directions to satisfy the condition of total reflection. From such a thing, when using a radiation light source, you may use guide parts, such as a collimating lens which controls the irradiation direction of irradiation light to a specific direction.
When fluorescence is used as the light signal, a monochromatic light source having a wavelength capable of exciting the fluorescence is used, or light from a light source having a wide wavelength band such as a lamp or an LED is transmitted through an optical filter such as a band pass filter. It is preferable that irradiation is performed from the back surface side of the target substance detection chip after taking out only a wavelength capable of exciting fluorescence and extracting fluorescence.

ここで、前記目的物質検出チップの前記表面と前記裏面とが平行な板である場合、前記裏面側から照射された光は、前記表面上に液体が存在すると全反射されない。よって、このような場合には、前記目的物質検出チップの前記裏面部分に回折格子を形成することにより、前記回折格子に特定の角度で光を照射したときに、光が前記回折格子で回折されて前記目的物質検出チップ内に導入されるとともに、前記目的物質検出チップ内に導入された光が全反射条件で表面に照射されて前記表面上に前記エバネッセント場又は前記増強電場が形成されるように、前記目的物質検出チップを構成してもよい。または、前記表面と前記裏面とが平行にならないように形成してもよい。或いは、前記光源から照射される光を公知のプリズムを介して前記目的物質検出チップの前記裏面に照射することとしてもよい。前記プリズムとしては、前記目的物質検出チップの前記裏面に屈折率調整オイル又は光学用接着剤等により光学的に貼り合せて用いることができる。また、前記プリズムの形成材料として、前記光透過性基板の形成材料と同じ形成材料が選択される場合には、前記光透過性基板と前記プリズムとが一体成型されたものを用いることもできる。   Here, when the front surface and the back surface of the target substance detection chip are parallel plates, the light irradiated from the back surface side is not totally reflected if a liquid is present on the surface. Therefore, in such a case, by forming a diffraction grating on the back surface portion of the target substance detection chip, the light is diffracted by the diffraction grating when the diffraction grating is irradiated with light at a specific angle. Light is introduced into the target substance detection chip, and the light introduced into the target substance detection chip is irradiated on the surface under total reflection conditions to form the evanescent field or the enhanced electric field on the surface Alternatively, the target substance detection chip may be configured. Or you may form so that the said surface and the said back may not become parallel. Alternatively, light emitted from the light source may be irradiated to the back surface of the target substance detection chip through a known prism. The prism can be optically bonded to the back surface of the target substance detection chip with a refractive index adjustment oil, an optical adhesive, or the like. In addition, when the same forming material as the forming material of the light transmitting substrate is selected as the forming material of the prism, it is also possible to use one in which the light transmitting substrate and the prism are integrally molded.

<磁場印加部>
前記磁場印加部は、第1の磁場印加部及び第2の磁場印加部の少なくともいずれかで形成される。
<Magnetic field application unit>
The magnetic field application unit is formed of at least one of a first magnetic field application unit and a second magnetic field application unit.

<第1の磁場印加部>
第1の磁場印加部は、前記目的物質検出チップの前記表面上に導入される前記液体試料に含まれる前記磁性粒子を前記表面に平行な方向又は前記表面から遠ざける方向に移動させる第1磁場を印加可能とされる部であり、前記目的物質検出チップの前記表面から前記磁性粒子を遠ざける遠ざけ磁場、又は、前記目的物質検出チップの前記表面上で前記表面に平行に移動させる方向に磁力を作用させる平行移動用磁場を印加可能とされる。
前記磁性粒子とともに前記結合体を構成する前記目的物質及び標識物質は、前記エバネッセント場又は前記増強電場内においてのみ、光信号を発生する。また、前記エバネッセント場及び前記増強電場の電場強度は、前記目的物質検出チップの前記表面から遠ざかるにつれて減衰する。その為、遠ざけ磁場の印加によって前記結合体が前記表面から遠ざけられると光信号が減衰し、更に、前記結合体が、前記エバネッセント場又は前記増強電場の電場強度がゼロとみなせる程度までの距離以上に前記表面から遠ざけられると、前記結合体の光信号が消滅することとなる。また、前記光検出部に撮像デバイスを用い、2次元画像情報を取得できる場合には、前記第1の磁場の印加によって表面上で変動した前記結合体の発する光信号は、前記光信号の変動として経時的に計測することが可能となる。前記目的物質検出装置では、このような光信号の減衰(消滅を含む)又は変動(減衰、消滅を伴い得る)を検知して、前記目的物質を検知する。
前記第1の磁場印加部としては、磁場の印加により前記結合体を移動させることが可能であれば、特に制限はなく、目的に応じて適宜選択することができ、公知の電磁石及び永久磁石のいずれか1つ以上を用いることができる。
<First magnetic field application unit>
A first magnetic field application unit moves a first magnetic field for moving the magnetic particles contained in the liquid sample introduced onto the surface of the target substance detection chip in a direction parallel to the surface or in a direction away from the surface It is a portion that can be applied, and a magnetic field to move the magnetic particles away from the surface of the target substance detection chip, or a magnetic field acting in a direction to move parallel to the surface on the surface of the target substance detection chip Can be applied.
The target substance and the labeling substance that constitute the conjugate together with the magnetic particles generate an optical signal only in the evanescent field or the enhanced electric field. In addition, the electric field strengths of the evanescent field and the enhanced electric field attenuate as they move away from the surface of the target substance detection chip. Therefore, when the combination is moved away from the surface by the application of a magnetic field, the light signal is attenuated, and further, the combination is a distance to such an extent that the electric field strength of the evanescent field or the enhanced electric field can be regarded as zero. The optical signal of the combined body disappears when it is moved away from the surface. In addition, when two-dimensional image information can be acquired by using an imaging device for the light detection unit, the light signal emitted from the combined body that has fluctuated on the surface by the application of the first magnetic field is fluctuation of the light signal. It becomes possible to measure over time. The target substance detection device detects the target substance by detecting such attenuation (including extinction) or fluctuation (which may be accompanied by attenuation or extinction) of the light signal.
The first magnetic field application unit is not particularly limited as long as the combination can be moved by application of a magnetic field, and can be appropriately selected according to the purpose. Any one or more can be used.

<第2の磁場印加部>
前記第2の磁場印加部は、前記目的物質検出チップの前記裏面側に配されるとともに前記表面上に導入された前記液体試料中の前記磁性粒子を前記表面上に引き寄せる第2磁場を印加可能とされる部である。
前記第2の磁場印加部としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、公知の電磁石及び永久磁石を用いて構成することができる。
このような前記第2の磁場印加部を有すると、前記液体試料中を浮遊する前記結合体を前記目的物質検出チップの前記表面に引き寄せることができ、短時間で前記目的物質の検出を行うことができる。
<Second magnetic field application unit>
The second magnetic field application unit can apply a second magnetic field that is disposed on the back surface side of the target substance detection chip and draws the magnetic particles in the liquid sample introduced onto the surface onto the surface. It is a section that
There is no restriction | limiting in particular as said 2nd magnetic field application part, According to the objective, it can select suitably, For example, it can comprise using a well-known electromagnet and permanent magnet.
When such a second magnetic field application unit is provided, the combined body floating in the liquid sample can be drawn to the surface of the target substance detection chip, and the target substance is detected in a short time. Can.

また、前記第2の磁場印加部としては、前記第2磁場を印加させた状態で前記磁性粒子を前記表面の面内方向と平行な方向のベクトル成分を持つ方向に移動可能とされる部であることが好ましい。
このような前記第2の磁場印加部としては、例えば、スライド部材上に前記電磁石又は前記永久磁石を保持し、前記目的物質検出チップの前記裏面側における前記光照射部からの前記光が照射される領域(検出領域)の近傍に前記電磁石又は前記永久磁石を位置させる初期状態と、前記目的物質検出チップの前記表面の面内方向と平行な方向のベクトル成分を持つ方向に向けて前記電磁石又は前記永久磁石を移動させた状態との間で移動制御させることで構成することができる。なお、前記電磁石を用いる場合、前記移動制御中、連続的或いは断続的に励磁させた状態とする。また、前記移動制御中に励磁の強度を変化させてもよい。
また、複数の前記電磁石又は永久磁石を配置し、各部材における前記磁場の印加状態を制御することによっても、前記スライド部材上に前記電磁石又は前記永久磁石を保持して前記移動制御を行う構成と同等の効果を得ることができる。
また、前記第2の磁場印加部としては、特に制限はないが、貫通孔が形成されている、或いはU字型などの不完全な環状、或いは複数の部材が環状乃至不完全な環状に配置された構成であってもよい。
前記第2の磁場印加部が前記第2磁場を印加させた状態で前記磁性粒子を前記表面の面内方向と平行な方向のベクトル成分を持つ方向に移動可能とされる部であると、ノイズ信号を排除することができる。
即ち、記磁性粒子と結合した前記目的物質が前記第2の磁場印加部の移動に追従して移動するのに対し、前記目的物質検出チップ表面のキズ等により生ずるノイズが前記第2の磁場印加部の移動に追従して移動しないことから、移動する光信号に着目した検出を行うことで、前記ノイズ信号を排除することができる。
The second magnetic field application unit is a unit capable of moving the magnetic particles in a direction having a vector component in a direction parallel to the in-plane direction of the surface in a state where the second magnetic field is applied. Is preferred.
As the second magnetic field application unit, for example, the electromagnet or the permanent magnet is held on a slide member, and the light from the light irradiation unit on the back surface side of the target substance detection chip is irradiated. The electromagnet or the permanent magnet in an initial state in which the electromagnet or the permanent magnet is positioned in the vicinity of the target region (detection region), and the electromagnet or direction having a vector component in a direction parallel to the in-plane direction of the surface of the target substance detection chip It can comprise by carrying out movement control between the state to which the said permanent magnet was moved. In addition, when using the said electromagnet, it is set as the state made to excite continuously or intermittently during the said movement control. Further, the intensity of excitation may be changed during the movement control.
In addition, a configuration is also provided in which the movement control is performed by holding the electromagnet or the permanent magnet on the slide member by arranging a plurality of electromagnets or permanent magnets and controlling the application state of the magnetic field in each member. The same effect can be obtained.
Further, the second magnetic field application unit is not particularly limited, but a through hole is formed, or an incomplete ring such as a U shape or a plurality of members are arranged in a ring or an incomplete ring The configuration may be modified.
The second magnetic field application unit is a unit capable of moving the magnetic particles in a direction having a vector component in a direction parallel to the in-plane direction of the surface in a state where the second magnetic field is applied. The signal can be eliminated.
That is, while the target substance combined with the magnetic magnetic particles moves following the movement of the second magnetic field application unit, the noise caused by a flaw or the like on the surface of the target substance detection chip is applied to the second magnetic field Since the movement does not follow the movement of the unit, the noise signal can be eliminated by performing detection based on the moving light signal.

<光検出部>
前記光検出部は、前記目的物質検出チップの前記表面側に配され、前記結合体から発せられる光信号を検出可能とされる。
前記光検出部としては、特に制限はなく、目的に応じて適宜選択することができ、公知のフォトダイオード、光電子増倍管等の光検出器を用いることができる。
光信号の情報を2次元画像情報として取得することができると、光点として現れる2次元画像情報における光信号の位置情報や、2次元上で観察されるサイズ情報、光点における光信号強度の増減情報を時系列で観察することにより、その光点が、目的物質によるものであるか、目的物質に関与する情報を示すものであるか、又は、夾雑物、光源出力の揺らぎ、検出板表面のキズ等の目的物質に関与しない情報を示すものであるかを区別することが可能となる。このような2次元画像情報の取得を可能とするには、前記光検出部として撮像デバイスを選択すればよい。前記撮像デバイスとしては、特に制限はなく、目的に応じて適宜選択することができ、公知のCCDイメージセンサ、CMOSイメージセンサ等のイメージセンサを用いることができる。
<Light detection unit>
The light detection unit is disposed on the front surface side of the target substance detection chip, and can detect an optical signal emitted from the combined body.
There is no restriction | limiting in particular as said light detection part, According to the objective, it can select suitably, Photodetectors, such as a well-known photodiode and a photomultiplier tube, can be used.
If information of an optical signal can be acquired as two-dimensional image information, position information of the optical signal in the two-dimensional image information appearing as a light spot, size information observed in two dimensions, light signal intensity at the light spot By observing the increase / decrease information in time series, the light spot is due to the target substance, or indicates information related to the target substance, or foreign matter, fluctuation of light source output, detection plate surface It is possible to distinguish whether it is information that does not relate to the target substance such as scratches. In order to enable acquisition of such two-dimensional image information, an imaging device may be selected as the light detection unit. There is no restriction | limiting in particular as said imaging device, According to the objective, it can select suitably, Image sensors, such as a well-known CCD image sensor and a CMOS image sensor, can be used.

(目的物質検出方法)
本発明の目的物質検出方法は、少なくとも光照射工程と結合体移動工程とを含む。
(Target substance detection method)
The target substance detection method of the present invention includes at least a light irradiation step and a conjugate transfer step.

<光照射工程>
前記光照射工程は、本発明の前記目的物質検出チップの前記凹凸構造が形成される面と反対の面を裏面として前記裏面側から全反射条件で光を照射する工程である。
前記光照射工程は、本発明の前記目的物質検出装置における前記光照射部により実施することができる。
<Light irradiation process>
The light irradiation step is a step of irradiating light under total reflection conditions from the back surface side with the surface opposite to the surface on which the uneven structure of the target substance detection chip of the present invention is formed as the back surface.
The said light irradiation process can be implemented by the said light irradiation part in the said target substance detection apparatus of this invention.

<結合体移動工程>
前記結合体移動工程は、前記目的物質検出チップの表面上に導入される液体試料に含まれる目的物質と磁性粒子との結合体を第1磁場の印加により前記表面に平行な方向又は前記表面から遠ざける方向に移動させる第1結合体移動工程、及び、前記裏面側に配される磁場印加部からの第2磁場の印加により前記液体試料中の前記結合体を前記表面上に引き寄せる第2結合体移動工程のいずれかで実施される工程である。
前記第2結合体移動工程としては、更に、前記第2磁場を印加した状態で前記磁場印加部を前記表面の面内方向と平行な方向のベクトル成分を持つ方向に移動させ、前記磁場印加部の移動に追従させて前記結合体を移動させる工程であることが好ましい。
前記結合体移動工程は、本発明の前記目的物質検出装置における前記磁場印加部により実施することができる。
<Conjugate transfer process>
In the conjugate transfer step, the conjugate of the target substance and the magnetic particles contained in the liquid sample introduced onto the surface of the target substance detection chip is applied in a direction parallel to the surface or from the surface by the application of a first magnetic field. A second combined body moving step in a direction to move away, and a second combined body for drawing the combined body in the liquid sample on the surface by application of a second magnetic field from a magnetic field application unit disposed on the back side It is a process carried out in any of the transfer processes.
In the second combined body moving step, the magnetic field applying unit is further moved in a direction having a vector component in a direction parallel to the in-plane direction of the surface in a state where the second magnetic field is applied, It is preferable to be a step of moving the combined body in accordance with the movement of
The combined body transfer step can be performed by the magnetic field application unit in the target substance detection device of the present invention.

[第5実施形態]
次に、本発明の第5実施形態を図面を参照しつつ説明する。なお、第5実施形態は、本発明の目的物質検出装置に係る実施形態である。
図8に示すように目的物質検出装置100は、公知の全反射照明蛍光顕微鏡の構成に準じて光学系が構成され、目的物質検出チップ1と、光源110及び光学プリズム120で構成される光照射部と、第1磁場印加部130と、光検出部140(撮像デバイス)とで構成される。なお、前記撮像デバイスは、例えば、公知のCCDイメージセンサ等で構成され、2次元画像の取得が可能とされる。なお、図8は、第5実施形態の概略構成を示す説明図である。
Fifth Embodiment
Next, a fifth embodiment of the present invention will be described with reference to the drawings. The fifth embodiment is an embodiment according to the target substance detection device of the present invention.
As shown in FIG. 8, in the target substance detection device 100, an optical system is configured according to the configuration of a known total reflection illumination fluorescent microscope, and light irradiation is configured with the target substance detection chip 1, the light source 110 and the optical prism 120. And a first magnetic field application unit 130 and a light detection unit 140 (imaging device). The imaging device is configured by, for example, a known CCD image sensor or the like, and can acquire a two-dimensional image. FIG. 8 is an explanatory view showing a schematic configuration of the fifth embodiment.

目的物質検出チップ1は、裏面側からの光Lの照射を受け、表面(凹凸構造付与層3が形成される側の面)上に前記エバネッセント場を存在可能とされる。また、目的物質検出チップ1は、前記表面上に導入された液体試料AをカバーガラスGで保持することとしている。
前記光照射部は、光源110から照射される光Lが光学プリズム120を介して光透過性基板2に入射し、光透過性基板2を透過して、凹凸構造付与層3の表面で全反射される条件で照射可能とされる。
また、第1磁場印加部130は、目的物質検出チップ1の前記表面上の検出領域(前記光照射部による光Lの照射を受け、前記表面上に前記エバネッセント場が形成される領域)に対して斜め上方に配され、前記表面上に導入された液体試料A中の結合体を磁場の印加により第1磁場印加部130の方向に引き寄せつつ、目的物質検出チップ1の前記表面から遠ざける方向に移動させるように構成される。本例における第1磁場印加部130は、電磁石により構成される。
The target substance detection chip 1 is irradiated with the light L from the back surface side, and the evanescent field can be present on the surface (surface on which the concavo-convex structure imparting layer 3 is formed). In addition, the target substance detection chip 1 holds the liquid sample A introduced onto the surface with a cover glass G.
In the light irradiator, the light L irradiated from the light source 110 is incident on the light transmitting substrate 2 through the optical prism 120, passes through the light transmitting substrate 2, and is totally reflected on the surface of the uneven structure imparting layer 3 Irradiation is possible under the following conditions.
In addition, the first magnetic field application unit 130 is applied to a detection region on the surface of the target substance detection chip 1 (a region where the evanescent field is formed on the surface upon receiving the light L from the light irradiation unit). Of the liquid sample A introduced on the surface toward the first magnetic field application unit 130 by application of a magnetic field, in a direction away from the surface of the target substance detection chip 1 It is configured to move. The first magnetic field application unit 130 in the present example is configured of an electromagnet.

このように構成される目的物質検出装置100では、先ず、目的物質検出チップ1の前記表面上に液体試料Aを導入させる。
次に、液体試料Aの液中を浮遊する前記結合体が目的物質検出チップ1の前記表面上に重力沈降した後、光学プリズム120を介して凹凸構造付与層3の表面で全反射される条件で光源110から光Lを照射し、光検出部140で目的物質検出チップ1の前記表面上に形成される前記エバネッセント場に基づく光信号Sを取得する。
In the target substance detection device 100 configured as described above, first, the liquid sample A is introduced onto the surface of the target substance detection chip 1.
Next, the condition in which the combined body floating in the liquid of the liquid sample A is gravitationally settled on the surface of the target substance detection chip 1 and then totally reflected on the surface of the uneven structure providing layer 3 via the optical prism 120 The light L is emitted from the light source 110 in step S12, and the light detection unit 140 acquires the light signal S based on the evanescent field formed on the surface of the target substance detection chip 1.

次に、第1磁場印加部130としての前記電磁石を励磁して液体試料A中の前記結合体を磁場の印加により第1磁場印加部130に向けて引き寄せ、目的物質検出チップ1の前記表面から遠ざける方向に移動させる。
ここで、目的物質検出装置100では、目的物質検出チップ1の前記表面に形成される前記凹凸構造により、前記結合体と目的物質検出チップ1の前記表面との吸着が抑制され、前記磁場の印加前後で前記結合体を容易に移動させることができる。
次に、観察視野を維持したまま前記結合体を移動させた後の目的物質検出チップ1の前記表面上の光信号を光信号検出部140で取得する。
Next, the electromagnet as the first magnetic field application unit 130 is excited to draw the combined substance in the liquid sample A toward the first magnetic field application unit 130 by applying a magnetic field, and from the surface of the target substance detection chip 1 Move in the direction to move away.
Here, in the target substance detection device 100, adsorption of the combined body and the surface of the target substance detection chip 1 is suppressed by the uneven structure formed on the surface of the target substance detection chip 1, and application of the magnetic field is performed. The conjugate can be easily moved back and forth.
Next, an optical signal detection unit 140 acquires an optical signal on the surface of the target substance detection chip 1 after moving the combination while maintaining the observation field of view.

このように構成される目的物質検出装置100では、前記磁場の印加前後(前記結合体の移動前後)における光信号が、図9(a),(b)のように得られ、前記目的物質に基づく光信号a,cを、目的物質検出チップ1の前記表面上のキズ、前記表面に吸着ないし前記表面上に存在する夾雑物、光源出力の揺らぎなどのノイズ信号bと明確に区別して検出される。なお、図9(a)が前記磁場の印加前における前記表面上の様子を示す図であり、図9(b)が前記磁場の印加後における前記表面上の様子を示す図である。また、図示しないが、観察視野外からの移動に基づく、光信号の出現も検出対象とすることができる。
以上のように目的物質検出装置100によれば、目的物質検出チップ1の前記凹凸構造により前記結合体を容易に移動させることができ、前記結合体を構成する前記目的物質を高精度に検出することができる。また、目的物質検出チップ1の前記表面上に前記夾雑物が吸着している場合でも、その存在を無視した検出を行うことができるため、必ずしも検出ごとに前記表面を洗浄処理する必要がなく、効率的な検出を行うことができる。
In the target substance detection device 100 configured as described above, optical signals before and after application of the magnetic field (before and after movement of the combined body) are obtained as shown in FIGS. 9A and 9B, and the target substance is obtained. The light signals a and c based on are detected clearly from noise signals b such as flaws on the surface of the target substance detection chip 1, adsorption on the surface or contaminants present on the surface, and fluctuations in light source output. Ru. FIG. 9A is a view showing the appearance on the surface before application of the magnetic field, and FIG. 9B is a view showing the appearance on the surface after the application of the magnetic field. Although not shown, the appearance of an optical signal based on movement from outside the observation field can also be detected.
As described above, according to the target substance detection device 100, the combination can be easily moved by the uneven structure of the target substance detection chip 1, and the target substance constituting the combination is detected with high accuracy. be able to. Further, even when the contaminants are adsorbed on the surface of the target substance detection chip 1, the detection can be performed ignoring the presence thereof, so that the surface does not have to be washed every time the detection is performed. Efficient detection can be performed.

[第6実施形態]
次に、本発明の第6実施形態を図面を参照しつつ説明する。なお、第6実施形態は、本発明の目的物質検出装置に係る実施形態である。
図10に示すように目的物質検出装置200は、公知の表面プラズモン共鳴センサ及び導波モードセンサに準じて光学系が構成され、目的物質検出チップ10と、光源210及び光学プリズム220で構成される光照射部と、第1磁場印加部230と、光検出部240(前記撮像デバイス)とで構成される。なお、図10は、第6実施形態の概略構成を示す説明図である。
Sixth Embodiment
Next, a sixth embodiment of the present invention will be described with reference to the drawings. The sixth embodiment is an embodiment according to the target substance detection device of the present invention.
As shown in FIG. 10, the target substance detection apparatus 200 has an optical system according to a known surface plasmon resonance sensor and a waveguide mode sensor, and is configured of a target substance detection chip 10, a light source 210 and an optical prism 220. It comprises a light irradiation unit, a first magnetic field application unit 230, and a light detection unit 240 (the imaging device). FIG. 10 is an explanatory view showing a schematic configuration of the sixth embodiment.

目的物質検出チップ10は、裏面側からの光Lの照射を受け、表面(凹凸構造付与層13が形成される側の面)上に前記増強電場を存在可能とされる。また、目的物質検出チップ10では、液体貯留部15に液体試料Aが導入される。
前記光照射部は、光源210から照射される光Lを光学プリズム220及び光透過性基板12を介して電場増強層14に全反射条件で照射可能とされる。
また、第1磁場印加部230は、目的物質検出チップ10の前記表面上の検出領域(前記光照射部による光Lの照射を受け、前記表面上に前記増強電場が形成される領域)に対して斜め上方に配され、液体貯留部15に導入された液体試料A中の結合体を磁場の印加により第1磁場印加部230の方向に引き寄せつつ、目的物質検出チップ10の前記表面から遠ざける方向に移動させるように構成される。本例における第1磁場印加部230は、電磁石により構成される。
The target substance detection chip 10 is irradiated with the light L from the back surface side, and the enhanced electric field can be present on the surface (the surface on which the concavo-convex structure imparting layer 13 is formed). Further, in the target substance detection chip 10, the liquid sample A is introduced into the liquid storage unit 15.
The light irradiator enables the light L emitted from the light source 210 to be irradiated to the electric field enhancing layer 14 through the optical prism 220 and the light transmitting substrate 12 under total reflection conditions.
In addition, the first magnetic field application unit 230 is applied to a detection region on the surface of the target substance detection chip 10 (a region in which the enhanced electric field is formed on the surface upon receiving the light L from the light irradiation unit). Of the liquid sample A introduced into the liquid storage unit 15 toward the first magnetic field application unit 230 by application of a magnetic field, while moving away from the surface of the target substance detection chip 10 Configured to be moved to The first magnetic field application unit 230 in the present example is configured of an electromagnet.

このように構成される目的物質検出装置200では、先ず、液体貯留部15に液体試料Aを導入させる。
次に、液体試料Aの液中を浮遊する前記結合体が目的物質検出チップ10の前記表面上に重力沈降した後、光源210から照射される光Lを光学プリズム220及び光透過性基板12を介して電場増強層14の一の面に対して全反射条件で照射し、光検出部240で目的物質検出チップ10の前記表面上に形成される前記増強電場に基づく光信号Sを取得する。
In the target substance detection device 200 configured as described above, first, the liquid sample A is introduced into the liquid storage unit 15.
Next, after the combined body floating in the liquid of the liquid sample A gravity settles on the surface of the target substance detection chip 10, the light L emitted from the light source 210 is used as the optical prism 220 and the light transmitting substrate 12 The light is irradiated to one surface of the electric field enhancing layer 14 under total reflection conditions, and the light detection unit 240 obtains an optical signal S based on the enhanced electric field formed on the surface of the target substance detection chip 10.

次に、第1磁場印加部230としての前記電磁石を励磁して液体貯留部15における液体試料A中の前記結合体を磁場の印加により第1磁場印加部に向けて引き寄せ、目的物質検出チップ10の前記表面から遠ざける方向に移動させる。
ここで、目的物質検出装置200は、目的物質検出チップ10の前記表面に形成される前記凹凸構造により、前記結合体と目的物質検出チップ10の前記表面との吸着が抑制され、前記磁場の印加前後で前記結合体を容易に移動させることができる。
次に、観察視野を維持したまま前記結合体を移動させた後の目的物質検出チップ10の前記表面上の光信号を光信号検出部240で取得する。
Next, the electromagnet as the first magnetic field application unit 230 is excited to draw the combined body in the liquid sample A in the liquid storage unit 15 toward the first magnetic field application unit by applying a magnetic field, and the target substance detection chip 10 Move away from the surface of the
Here, in the target substance detection device 200, the adsorption between the combined body and the surface of the target substance detection chip 10 is suppressed by the uneven structure formed on the surface of the target substance detection chip 10, and the application of the magnetic field is performed. The conjugate can be easily moved back and forth.
Next, an optical signal detection unit 240 acquires an optical signal on the surface of the target substance detection chip 10 after moving the combination while maintaining the observation field of view.

このように構成される目的物質検出装置200では、前記磁場の印加前後(前記結合体の移動前後)における光信号が、図11(a),(b)のように得られ、前記目的物質に基づく光信号d,fを、目的物質検出チップ10の前記表面上のキズ、前記表面に吸着ないし前記表面上に存在する夾雑物、光源出力の揺らぎなどのノイズ信号eと明確に区別して検出される。なお、図11(a)が前記磁場の印加前における前記表面上の様子を示す図であり、図11(b)が前記磁場の印加後における前記表面上の様子を示す図である。
図11(a),(b)に示すように光信号は、前記増強電場の減衰によりバックグランドが暗視野とされ、目的物質検出装置200では、光点の光信号に基づき、前記目的物質を検出する。また、図示しないが、観察視野外からの移動に基づく、光信号の出現も検出対象とすることができる。
目的物質検出装置200によれば、目的物質検出チップ10の前記凹凸構造により前記結合体を容易に移動させることができ、前記結合体を構成する前記目的物質を高精度に検出することができる。また、目的物質検出チップ10の前記表面上に前記夾雑物が吸着している場合でも、その存在を無視した検出を行うことができるため、必ずしも検出ごとに液体貯留部15を洗浄処理する必要がなく、効率的な検出を行うことができる。
In the target substance detection device 200 configured as described above, optical signals before and after application of the magnetic field (before and after movement of the combined body) are obtained as shown in FIGS. 11A and 11B, and the target substance is obtained. The light signals d and f based on are detected clearly from noise signals e such as flaws on the surface of the target substance detection chip 10, adsorption on the surface or contaminants present on the surface, and fluctuations in the light source output. Ru. FIG. 11A is a view showing the appearance on the surface before the application of the magnetic field, and FIG. 11B is a view showing the appearance on the surface after the application of the magnetic field.
As shown in FIGS. 11 (a) and 11 (b), the background of the light signal is turned to a dark field by the attenuation of the enhanced electric field, and the target substance detection device 200 detects the target substance based on the light signal of the light spot. To detect. Although not shown, the appearance of an optical signal based on movement from outside the observation field can also be detected.
According to the target substance detection device 200, the combination can be easily moved by the uneven structure of the target substance detection chip 10, and the target substance constituting the combination can be detected with high accuracy. In addition, even when the contaminants are adsorbed on the surface of the target substance detection chip 10, detection can be performed ignoring the presence thereof, so the liquid storage portion 15 needs to be washed every time it is detected. And efficient detection can be performed.

[第7の実施形態]
次に、本発明の第7実施形態を図面を参照しつつ説明する。なお、第7実施形態は、本発明の目的物質検出装置に係る実施形態である。
図12に示すように、第7実施形態に係る目的物質検出装置300は、公知の表面プラズモン共鳴センサ及び導波モードセンサに準じて光学系が構成され、目的物質検出チップ10と、光源310及び光学プリズム320で構成される光照射部と、第2磁場印加部330と、光検出部340(前記撮像デバイス)とで構成される。なお、図12は、第7実施形態の概略構成を示す説明図である。
前記光照射部及び光検出部340は、第6の実施形態に係る目的物質検出装置200における前記光照射部及び光信号検出部240と同様に構成することができ、第7の実施形態に係る目的物質検出装置300は、第1磁場印加部230に代えて第2磁場印加部330を配する点で第7の実施形態に係る目的物質検出装置200と相違する。以下、相違点について説明する。
Seventh Embodiment
Next, a seventh embodiment of the present invention will be described with reference to the drawings. The seventh embodiment is an embodiment according to the target substance detection device of the present invention.
As shown in FIG. 12, in the target substance detection device 300 according to the seventh embodiment, an optical system is configured according to a known surface plasmon resonance sensor and waveguide mode sensor, and a target substance detection chip 10, a light source 310, and It is comprised by the light irradiation part comprised by the optical prism 320, the 2nd magnetic field application part 330, and the light detection part 340 (the said imaging device). FIG. 12 is an explanatory view showing a schematic configuration of the seventh embodiment.
The light irradiation unit and the light detection unit 340 can be configured in the same manner as the light irradiation unit and the light signal detection unit 240 in the target substance detection device 200 according to the sixth embodiment, and the seventh embodiment The target substance detection device 300 is different from the target substance detection device 200 according to the seventh embodiment in that a second magnetic field application unit 330 is provided instead of the first magnetic field application unit 230. The differences will be described below.

第2磁場印加部330は、目的物質検出チップ10の前記裏面側に配されるとともに液体貯留部15に導入された液体試料A中の前記結合体を磁場の印加により目的物質検出チップ10の前記表面上に引き寄せ可能とされるとともに前記磁場を印加した状態で目的物質検出チップ10の前記表面の面内方向と平行な方向のベクトル成分を持つ方向に移動可能とされる。ここで、第2磁場印加部330は、永久磁石と前記永久磁石をX又はXの方向にスライド移動させるスライド移動部材(不図示)とで形成される。
前記結合体の移動は、第2磁場印加部330からの前記磁場の印加により、一旦、目的物質検出チップ10の液体試料A中の前記結合体を目的物質検出チップ10の前記表面上に引き寄せた後、前記磁場を印加した状態で第2磁場印加部330を目的物質検出チップ10の前記表面の面内方向と平行な方向のベクトル成分を持つ方向(X又はXの方向)に移動させ、この第2磁場印加部330の移動に追従させて行う。
この第2磁場印加部330を用いる場合、前記磁場の印加により液体試料A中の前記結合体を目的物質検出チップ10の前記表面上に引き寄せるため、液体試料Aの液中を浮遊する前記結合体が目的物質検出チップ10の前記表面上に重力沈降することを待つ必要がない。
The second magnetic field application unit 330 is disposed on the back surface side of the target substance detection chip 10 and applies the magnetic field to the combined body in the liquid sample A introduced to the liquid storage part 15 as the target substance detection chip 10 It can be drawn on the surface and can be moved in a direction having a vector component in a direction parallel to the in-plane direction of the surface of the target substance detection chip 10 in the state where the magnetic field is applied. Here, the second magnetic field applying unit 330 is formed out with sliding member for sliding said permanent magnet and the permanent magnet in the direction of the X 1 or X 2 (not shown).
In the movement of the combined body, the combination in the liquid sample A of the target substance detection chip 10 was once drawn to the surface of the target substance detection chip 10 by the application of the magnetic field from the second magnetic field application unit 330. After that, with the magnetic field applied, the second magnetic field application unit 330 is moved in a direction (direction of X 1 or X 2 ) having a vector component in a direction parallel to the in-plane direction of the surface of the target substance detection chip 10 The movement of the second magnetic field application unit 330 is made to follow.
In the case of using the second magnetic field application unit 330, the combination in the liquid sample A floats because the combination in the liquid sample A is drawn on the surface of the target substance detection chip 10 by the application of the magnetic field. There is no need to wait for gravity to settle on the surface of the target substance detection chip 10.

また、このように構成される目的物質検出装置300では、第2磁場印加部の移動前後における光信号が、図13(a),(b)のように得られ、前記目的物質に基づく光信号hを、目的物質検出チップ10の前記表面上のキズ、前記表面に吸着ないし前記表面上に存在する夾雑物、光源出力の揺らぎなどのノイズ信号iと明確に区別して検出することができる。なお、図13(a)が第2磁場印加部の移動前における前記表面上の様子を示す図であり、図13(b)が第2磁場印加部の移動後における前記表面上の様子を示す図である。   Further, in the target substance detection device 300 configured as described above, optical signals before and after the movement of the second magnetic field application unit are obtained as shown in FIGS. 13A and 13B, and an optical signal based on the target substance is obtained. h can be clearly distinguished from noise signals i such as flaws on the surface of the target substance detection chip 10, impurities adsorbed on the surface or contaminants present on the surface, and fluctuations of the light source output. FIG. 13 (a) is a view showing the state on the surface before movement of the second magnetic field application unit, and FIG. 13 (b) is a view showing the state on the surface after movement of the second magnetic field application unit. FIG.

1,10,20,30 目的物質検出チップ
2,12,22 光透過性基板
3,3’13,23 凹凸構造付与層
14,24,34 電場増強層
15,25,35 液体貯留部
50 凹凸構造形成例
51 凸部
52 平滑面
100,200,300 目的物質検出装置
110,210,310 光源
120,220,320 光学プリズム
130,230 第1磁場印加部
140,240,340 光検出部
330 第2磁場印加部

1, 10, 20, 30 Target substance detection chip 2, 12, 22 Light transmitting substrate 3, 3 13 13, 23 Irregular structure application layer 14, 24, 34 Electric field enhancing layer 15, 25, 35 Liquid reservoir 50 Irregular structure Formation example 51 Convex part 52 Smooth surface 100, 200, 300 Target substance detection device 110, 210, 310 Light source 120, 220, 320 Optical prism 130, 230 First magnetic field application unit 140, 240, 340 Light detection unit 330 Second magnetic field Applying unit

Claims (11)

光透過性基板上に、複数の凸部を周期的に配して構成される凹凸構造を有することを特徴とする目的物質検出チップ。   A target substance detection chip having a concavo-convex structure configured by periodically arranging a plurality of convex portions on a light transmitting substrate. 平滑面を有する光透過性基板と、前記光透過性基板の前記平滑面上に積層されるとともに前記光透過性基板側の面と反対の面が凹凸面とされる凹凸構造付与層とで構成され、前記凹凸面で凹凸構造が形成される請求項1に記載の目的物質検出チップ。   A light transmitting substrate having a smooth surface, and a concavo-convex structure providing layer which is laminated on the smooth surface of the light transmitting substrate and whose surface opposite to the surface on the light transmitting substrate side is a concavo-convex surface The target substance detection chip according to claim 1, wherein an uneven structure is formed on the uneven surface. 光透過性基板上に、少なくとも一の面に全反射条件で光が照射されたとき他の面上に増強電場が形成される電場増強層が配され、前記光透過性基板側の面を裏面として前記裏面側から前記電場増強層の前記一の面に対し前記光が全反射条件で照射されたときに前記増強電場が表面近傍に存在可能とされる請求項1から2のいずれかに記載の目的物質検出チップ。   On the light transmitting substrate, an electric field enhancing layer is formed in which an enhanced electric field is formed on at least one surface when light is irradiated under total reflection conditions, and the surface on the light transmitting substrate side is the back surface The enhanced electric field according to any one of claims 1 to 2, wherein the enhanced electric field can be present in the vicinity of the surface when the light is irradiated from the back surface side to the one surface of the electric field enhancing layer under total reflection conditions. Target substance detection chip. 平滑面を有する光透過性基板と、前記光透過性基板の前記平滑面上に積層される平滑な電場増強層と、前記電場増強層上に積層される凹凸構造付与層とで構成され、前記凹凸構造付与層の凹凸面で凹凸構造が形成される請求項3に記載の目的物質検出チップ。   A light transmitting substrate having a smooth surface, a smooth electric field enhancing layer laminated on the smooth surface of the light transmitting substrate, and a concavo-convex structure imparting layer stacked on the electric field enhancing layer, 4. The target substance detection chip according to claim 3, wherein a concavo-convex structure is formed on the concavo-convex surface of the concavo-convex structure providing layer. 平滑面を有する光透過性基板と、前記光透過性基板の前記平滑面上に積層されるとともに前記光透過性基板側の面と反対の面が第1凹凸面とされる凹凸構造付与層と、前記凹凸構造付与層の前記第1凹凸面上に積層されるとともに前記凹凸構造付与層側の面と反対の面が前記第1凹凸面の凹凸パターンが転写された形状の第2凹凸面とされる電場増強層とで構成され、前記第2凹凸面で凹凸構造が形成される請求項3に記載の目的物質検出チップ。   A light transmitting substrate having a smooth surface, and a concavo-convex structure providing layer which is laminated on the smooth surface of the light transmitting substrate and whose surface opposite to the surface on the light transmitting substrate side is a first uneven surface A second concavo-convex surface having a shape in which the concavo-convex pattern of the first concavo-convex surface is transferred onto the first concavo-convex surface of the concavo-convex structure providing layer and the surface opposite to the surface on the concavo-convex structure providing layer side; 4. The target substance detection chip according to claim 3, wherein the target substance detection chip is configured by an electric field enhancing layer to be formed, and a concavo-convex structure is formed by the second concavo-convex surface. 第1凹凸面を有する光透過性基板と、前記光透過性基板の前記第1凹凸面上に積層されるとともに前記光透過性基板側の面と反対の面が前記第1凹凸面の凹凸パターンが転写された形状の第2凹凸面とされる電場増強層とで構成され、前記第2凹凸面で凹凸構造が形成される請求項3に記載の目的物質検出チップ。   A light transmitting substrate having a first uneven surface, and a surface which is laminated on the first uneven surface of the light transmitting substrate and opposite to the surface on the light transmitting substrate side has an uneven pattern of the first uneven surface 4. The target substance detection chip according to claim 3, wherein the target substance detection chip is formed of an electric field enhancing layer which is a second concavo-convex surface of a transferred shape, and the concavo-convex structure is formed by the second concavo-convex surface. 凸部が2種類以上の形状で形成されるとともに、前記形状の少なくとも1種が2回回転対称形状及び線対称形状のいずれかとされる請求項1から6のいずれかに記載の目的物質検出チップ。   The target substance detection chip according to any one of claims 1 to 6, wherein the convex portion is formed in two or more types of shapes, and at least one of the shapes is made into either a 2-fold rotational symmetry shape or a line symmetry shape. . 請求項1から7のいずれかに記載の目的物質検出チップと、
前記目的物質検出チップの凹凸構造が形成される面と反対の面を裏面として前記裏面側から全反射条件で光を照射可能とされる光照射部と、
前記目的物質検出チップの表面上に導入される液体試料に含まれる磁性粒子を前記表面に平行な方向又は前記表面から遠ざける方向に移動させる第1磁場を印加可能とされる第1磁場印加部及び前記目的物質検出チップの前記裏面側に配されるとともに前記表面上に導入された前記液体試料中の前記磁性粒子を前記表面上に引き寄せる第2磁場を印加可能とされる第2磁場印加部の少なくともいずれかで形成される磁場印加部と、
を備えることを特徴とする目的物質検出装置。
The target substance detection chip according to any one of claims 1 to 7.
A light irradiation unit capable of emitting light under the condition of total reflection from the back surface side with the surface opposite to the surface on which the concavo-convex structure of the target substance detection chip is formed as the back surface;
A first magnetic field application unit capable of applying a first magnetic field for moving magnetic particles contained in a liquid sample introduced onto the surface of the target substance detection chip in a direction parallel to the surface or in a direction away from the surface; A second magnetic field application unit disposed on the back surface side of the target substance detection chip and capable of applying a second magnetic field for attracting the magnetic particles in the liquid sample introduced onto the surface onto the surface A magnetic field application unit formed by at least one of
A target substance detection device comprising:
第2の磁場印加部を有し、かつ、前記第2磁場印加部が第2磁場を印加した状態で目的物質検出チップ表面の面内方向と平行な方向のベクトル成分を持つ方向に移動可能とされる請求項8に記載の目的物質検出装置。   A second magnetic field application unit, and movable in a direction having a vector component in a direction parallel to the in-plane direction of the surface of the target substance detection chip in a state where the second magnetic field application unit applies a second magnetic field; The target substance detection device according to claim 8. 請求項1から7のいずれかに記載の目的物質検出チップの凹凸構造が形成される面と反対の面を裏面として前記裏面側から全反射条件で光を照射する光照射工程と、
前記目的物質検出チップの表面上に導入される液体試料に含まれる目的物質と磁性粒子との結合体を第1磁場の印加により前記表面に平行な方向又は前記表面から遠ざける方向に移動させる第1結合体移動工程、及び、前記裏面側に配される磁場印加部からの第2磁場の印加により前記液体試料中の前記結合体を前記表面上に引き寄せる第2結合体移動工程の少なくともいずれかで実施される結合体移動工程と、
を含むことを特徴とする目的物質検出方法。
A light irradiation step of irradiating light under total reflection conditions from the back surface side with the surface opposite to the surface on which the concavo-convex structure of the target substance detection chip according to any one of claims 1 to 7 is formed,
First, a combination of a target substance and magnetic particles contained in a liquid sample introduced onto the surface of the target substance detection chip is moved in a direction parallel to the surface or in a direction away from the surface by application of a first magnetic field At least one of a combined body moving step, and a second combined body moving step of drawing the combined body in the liquid sample on the surface by applying a second magnetic field from the magnetic field application unit disposed on the back surface side A conjugate transfer step to be performed;
A target substance detection method characterized by including.
第2結合体移動工程を含み、かつ、前記第2結合体移動工程が第2磁場を印加した状態で磁場印加部を目的物質検出チップ表面の面内方向と平行な方向のベクトル成分を持つ方向に移動させ、前記磁場印加部の移動に追従させて結合体を移動させる工程である請求項10に記載の目的物質検出方法。

A direction including a second combined body moving step and a vector component in a direction parallel to the in-plane direction of the target substance detection chip surface in the state where the second combined body moving step applies a second magnetic field The target substance detection method according to claim 10, wherein the combined substance is moved following the movement of the magnetic field application unit.

JP2017080282A 2017-04-14 2017-04-14 Target substance detection chip, target substance detection device and target substance detection method Expired - Fee Related JP7029121B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017080282A JP7029121B2 (en) 2017-04-14 2017-04-14 Target substance detection chip, target substance detection device and target substance detection method
EP18784840.3A EP3594663A4 (en) 2017-04-14 2018-04-11 CHIP FOR DETECTION OF DESIRED SUBSTANCES, DEVICE FOR DETECTION OF DESIRED SUBSTANCES, AND METHOD FOR DETECTING DESIRED SUBSTANCES
US16/604,877 US11112359B2 (en) 2017-04-14 2018-04-11 Target substance detection chip, target substance detection device, and target substance detection method
PCT/JP2018/015170 WO2018190358A1 (en) 2017-04-14 2018-04-11 Desired-substance detection chip, desired-substance detection device, and desired-substance detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017080282A JP7029121B2 (en) 2017-04-14 2017-04-14 Target substance detection chip, target substance detection device and target substance detection method

Publications (2)

Publication Number Publication Date
JP2018179783A true JP2018179783A (en) 2018-11-15
JP7029121B2 JP7029121B2 (en) 2022-03-03

Family

ID=64275104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017080282A Expired - Fee Related JP7029121B2 (en) 2017-04-14 2017-04-14 Target substance detection chip, target substance detection device and target substance detection method

Country Status (1)

Country Link
JP (1) JP7029121B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020159812A (en) * 2019-03-26 2020-10-01 東芝テック株式会社 Computation device, sample preparing device, and detector

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5841143A (en) * 1997-07-11 1998-11-24 The United States Of America As Represented By Administrator Of The National Aeronautics And Space Administration Integrated fluorescene
US20040149928A1 (en) * 2003-02-03 2004-08-05 Gruhlke Russell W. Tunable cross-coupling evanescent mode optical devices and methods of making the same
WO2007102585A1 (en) * 2006-03-09 2007-09-13 National Institute Of Advanced Industrial Science And Technology Optical waveguide mode sensor
JP2010512534A (en) * 2006-12-12 2010-04-22 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Microelectronic sensor device for detecting label particles
JP2011107032A (en) * 2009-11-19 2011-06-02 Omron Corp Surface plasmon resonance chip
JP5301894B2 (en) * 2008-06-27 2013-09-25 富士フイルム株式会社 Detection method
JP2014016221A (en) * 2012-07-09 2014-01-30 Fujifilm Corp Optical field amplifying device and method of manufacturing the same
JP2015052562A (en) * 2013-09-09 2015-03-19 大日本印刷株式会社 Surface-enhanced Raman scattering measurement substrate and manufacturing method thereof
US20150177140A1 (en) * 2012-12-15 2015-06-25 Junpeng Guo Nanostructure diffraction gratings for integrated spectroscopy and sensing

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5841143A (en) * 1997-07-11 1998-11-24 The United States Of America As Represented By Administrator Of The National Aeronautics And Space Administration Integrated fluorescene
US20040149928A1 (en) * 2003-02-03 2004-08-05 Gruhlke Russell W. Tunable cross-coupling evanescent mode optical devices and methods of making the same
WO2007102585A1 (en) * 2006-03-09 2007-09-13 National Institute Of Advanced Industrial Science And Technology Optical waveguide mode sensor
JP2010512534A (en) * 2006-12-12 2010-04-22 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Microelectronic sensor device for detecting label particles
JP5301894B2 (en) * 2008-06-27 2013-09-25 富士フイルム株式会社 Detection method
JP2011107032A (en) * 2009-11-19 2011-06-02 Omron Corp Surface plasmon resonance chip
JP2014016221A (en) * 2012-07-09 2014-01-30 Fujifilm Corp Optical field amplifying device and method of manufacturing the same
US20150177140A1 (en) * 2012-12-15 2015-06-25 Junpeng Guo Nanostructure diffraction gratings for integrated spectroscopy and sensing
JP2015052562A (en) * 2013-09-09 2015-03-19 大日本印刷株式会社 Surface-enhanced Raman scattering measurement substrate and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020159812A (en) * 2019-03-26 2020-10-01 東芝テック株式会社 Computation device, sample preparing device, and detector
JP2023181535A (en) * 2019-03-26 2023-12-21 東芝テック株式会社 detection system
JP7738042B2 (en) 2019-03-26 2025-09-11 東芝テック株式会社 Detection System

Also Published As

Publication number Publication date
JP7029121B2 (en) 2022-03-03

Similar Documents

Publication Publication Date Title
JP7008334B2 (en) Optical detection method and optical detection device
US11112359B2 (en) Target substance detection chip, target substance detection device, and target substance detection method
US10107807B2 (en) One dimensional photonic crystals for enhanced fluorescence based sensing, imaging and assays
WO2013011831A1 (en) Target substance detection chip, target substance detection plate, target substance detection device and target substance detection method
JP6738070B2 (en) Optical detection device and optical detection method
JP6664741B2 (en) Optical measuring method and measuring device
JP5920692B2 (en) Target substance detection chip, target substance detection device, and target substance detection method
JP7028455B2 (en) Target substance detection device and target substance detection method
JP5923811B2 (en) Target substance detection plate, target substance detection apparatus, and target substance detection method
JP7029121B2 (en) Target substance detection chip, target substance detection device and target substance detection method
JP6913966B2 (en) Sensor chip, target substance detection device and target substance detection method
US7662614B2 (en) Biochip platform including dielectric particle layer and optical assay apparatus using the same
JP6928930B2 (en) Target substance detection chip, target substance detection device and target substance detection method
JP7097563B2 (en) Target substance detection device and target substance detection method
JP5622215B2 (en) Microplate having periodic structure, surface plasmon excitation enhanced fluorescence microscope, fluorescence microplate reader using the same, and method for detecting specific antigen-antibody reaction
JP6936987B2 (en) Target substance detection chip, target substance detection device and target substance detection method
JP6991504B2 (en) Target substance detection device and target substance detection method
US20140217267A1 (en) Method and device for coupling a light beam into a foil
WO2024043167A1 (en) Target substance measuring method, and target substance measuring system
Summers et al. Cytometric biochips with optically active surfaces for spatial engineering of fluorescence excitation
JP2019035683A (en) Target substance detection chip, target substance detection device, and target substance detection method
Chung Chip-based bioassay based on surface plasmon resonance for label-free biomolecular detection

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200205

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20201110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210518

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210708

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220114

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220201

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220207

R150 Certificate of patent or registration of utility model

Ref document number: 7029121

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees