JP2009048199A5 - - Google Patents
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- Publication number
- JP2009048199A5 JP2009048199A5 JP2008232509A JP2008232509A JP2009048199A5 JP 2009048199 A5 JP2009048199 A5 JP 2009048199A5 JP 2008232509 A JP2008232509 A JP 2008232509A JP 2008232509 A JP2008232509 A JP 2008232509A JP 2009048199 A5 JP2009048199 A5 JP 2009048199A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- film
- liquid crystal
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010408 film Substances 0.000 claims 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000011810 insulating material Substances 0.000 claims 3
- 239000004973 liquid crystal related substance Substances 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910004205 SiNX Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Claims (3)
前記多結晶シリコン膜上にゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜上にゲート電極を形成する段階と、
前記ゲート電極上に前記ゲート電極の損傷を防止する絶縁膜を形成する段階と、
前記多結晶シリコン膜に不純物をイオン注入する段階と、
前記ゲート絶縁膜及び前記絶縁膜にレーザビームを照射することにより、不純物をアニーリングする段階と、
を含む製造方法により製造され、
前記絶縁膜を形成する段階では、照射されるレーザビームのエネルギーバンドギャップより大きいバンドギャップを有する絶縁物質で前記絶縁膜が形成されている、
液晶表示装置用薄膜トランジスタ基板。 Forming a polycrystalline silicon film on the substrate;
Forming a gate insulating film on the polycrystalline silicon film;
Forming a gate electrode on the gate insulating film;
Forming an insulating film on the gate electrode to prevent damage to the gate electrode;
Ion-implanting impurities into the polycrystalline silicon film;
Irradiating the gate insulating film and the insulating film with a laser beam to anneal impurities;
Manufactured by a manufacturing method including
In the step of forming the insulating film, the insulating film is formed of an insulating material having a band gap larger than the energy band gap of the irradiated laser beam.
Thin film transistor substrate for liquid crystal display device.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950035200A KR100188090B1 (en) | 1995-10-12 | 1995-10-12 | Fabrication method of thin film transistor panel for lcd |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005172379A Division JP4312741B2 (en) | 1995-10-12 | 2005-06-13 | Thin film transistor substrate for liquid crystal display device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009048199A JP2009048199A (en) | 2009-03-05 |
| JP2009048199A5 true JP2009048199A5 (en) | 2009-09-10 |
Family
ID=19430017
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27048196A Expired - Fee Related JP3774278B2 (en) | 1995-10-12 | 1996-10-14 | Method for manufacturing thin film transistor substrate for liquid crystal display device |
| JP2005172379A Expired - Fee Related JP4312741B2 (en) | 1995-10-12 | 2005-06-13 | Thin film transistor substrate for liquid crystal display device and manufacturing method thereof |
| JP2008232509A Withdrawn JP2009048199A (en) | 1995-10-12 | 2008-09-10 | Thin film transistor substrate for liquid crystal display device and manufacturing method thereof |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27048196A Expired - Fee Related JP3774278B2 (en) | 1995-10-12 | 1996-10-14 | Method for manufacturing thin film transistor substrate for liquid crystal display device |
| JP2005172379A Expired - Fee Related JP4312741B2 (en) | 1995-10-12 | 2005-06-13 | Thin film transistor substrate for liquid crystal display device and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (3) | JP3774278B2 (en) |
| KR (1) | KR100188090B1 (en) |
| TW (1) | TWI246620B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3318285B2 (en) | 1999-05-10 | 2002-08-26 | 松下電器産業株式会社 | Method for manufacturing thin film transistor |
| KR101781175B1 (en) * | 2015-08-31 | 2017-09-22 | 가천대학교 산학협력단 | Junctionless field-effect transistor having ultra-thin low-crystalline-silicon channel and fabrication method thereof |
| WO2019244665A1 (en) * | 2018-06-22 | 2019-12-26 | 住友重機械工業株式会社 | Laser annealing method for semiconductor device, semiconductor device, laser annealing method, control device for laser annealing device, and laser annealing device |
| CN109920731B (en) * | 2019-03-20 | 2021-03-19 | 上海华虹宏力半导体制造有限公司 | Polycrystalline silicon thin film transistor and manufacturing method thereof |
| CN115497816B (en) * | 2022-10-19 | 2023-10-17 | 弘大芯源(深圳)半导体有限公司 | Semiconductor field effect integrated circuit and preparation method thereof |
-
1995
- 1995-10-12 KR KR1019950035200A patent/KR100188090B1/en not_active Expired - Lifetime
-
1996
- 1996-09-07 TW TW085110952A patent/TWI246620B/en not_active IP Right Cessation
- 1996-10-14 JP JP27048196A patent/JP3774278B2/en not_active Expired - Fee Related
-
2005
- 2005-06-13 JP JP2005172379A patent/JP4312741B2/en not_active Expired - Fee Related
-
2008
- 2008-09-10 JP JP2008232509A patent/JP2009048199A/en not_active Withdrawn
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