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JP2003171790A - Plating material, method of manufacturing the same, and electric / electronic parts using the same - Google Patents

Plating material, method of manufacturing the same, and electric / electronic parts using the same

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Publication number
JP2003171790A
JP2003171790A JP2001388269A JP2001388269A JP2003171790A JP 2003171790 A JP2003171790 A JP 2003171790A JP 2001388269 A JP2001388269 A JP 2001388269A JP 2001388269 A JP2001388269 A JP 2001388269A JP 2003171790 A JP2003171790 A JP 2003171790A
Authority
JP
Japan
Prior art keywords
plating layer
plating
alloy
thickness
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001388269A
Other languages
Japanese (ja)
Other versions
JP4514012B2 (en
Inventor
Hitoshi Tanaka
仁志 田中
Akira Matsuda
晃 松田
Satoshi Suzuki
智 鈴木
Morimasa Tanimoto
守正 谷本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP2001388269A priority Critical patent/JP4514012B2/en
Publication of JP2003171790A publication Critical patent/JP2003171790A/en
Application granted granted Critical
Publication of JP4514012B2 publication Critical patent/JP4514012B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57)【要約】 【課題】 良好な耐熱性と挿抜性を併有するめっき材料
を提供する。 【解決手段】 導電性基体1の表面に、周期律表4族、
5族、6族、7族、8族、9族、もしくは10族に含ま
れるいずれか1種の金属またはそれを主成分とする合金
から成る下地めっき層2と、CuまたはCu合金から成
る中間めっき層3と、SnまたはSn合金から成る表面
めっき層4とがこの順序で形成されており、かつ、表面
めっき層4の厚みが中間めっき層3の厚みの1.9倍以
上の厚みであるめっき材料。
(57) [Problem] To provide a plating material having both good heat resistance and insertability. SOLUTION: The surface of a conductive substrate 1 has a group 4 of the periodic table,
A base plating layer 2 made of any one of metals belonging to group 5, 6, 7, 8, 9 or 10 or an alloy mainly containing the same, and an intermediate layer made of Cu or Cu alloy The plating layer 3 and the surface plating layer 4 made of Sn or Sn alloy are formed in this order, and the thickness of the surface plating layer 4 is at least 1.9 times the thickness of the intermediate plating layer 3. Plating material.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明はめっき材料とその製
造方法、そのめっき材料を用いた電気・電子部品に関す
る。更に詳しくは、耐熱性が良好で、例えば自動車のエ
ンジンルームのような高温環境下で使用するコネクタの
材料として好適なめっき材料に関する。また、良好な耐
熱性と挿抜性を兼ね備えているので、高温環境下で使用
する嵌合型コネクタや接触子の材料として好適なめっき
材料に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating material, a method for producing the same, and electric / electronic parts using the plating material. More specifically, the present invention relates to a plating material which has good heat resistance and is suitable as a material for a connector used in a high temperature environment such as an automobile engine room. Further, the present invention relates to a plating material suitable as a material for a fitting type connector or a contactor used in a high temperature environment because it has both good heat resistance and insertability / extractability.

【0002】[0002]

【従来の技術】CuやCu合金から成る導電性基材の上
に、SnやSn合金から成るめっき層を設けた材料は、
基材の優れた導電性や強度と、SnやSn合金の良好な
電気接触特性、耐食性、はんだ付け性とを兼ね備えた高
性能導体として知られている。そして、この材料は各種
の端子やコネクタなどに広く用いられている。
2. Description of the Related Art A material in which a plating layer made of Sn or Sn alloy is provided on a conductive base material made of Cu or Cu alloy is
It is known as a high-performance conductor having excellent conductivity and strength of a base material and good electrical contact characteristics, corrosion resistance, and solderability of Sn or Sn alloy. This material is widely used for various terminals and connectors.

【0003】このような材料としては、通常、基材の上
にCuまたはNiの下地めっきを施したのち、その上
に、直接、SnまたはSn合金のめっきを施して製造し
たものが用いられている。この下地めっき層は、基材成
分(CuやZnなどの合金成分)が表面のSnまたはS
n合金へ拡散することを抑制するために設けられるもの
である。とくに、下地めっき層がNiやNi合金から成
るめっき層である場合には、高温環境下にあっても表面
のSnまたはSn合金への上記した拡散を遅延させる効
果が大きい。そのため、長時間に亘って表面におけるS
nやSn合金の特性が確保されることになる。
As such a material, there is usually used a material produced by subjecting a base material to an undercoat of Cu or Ni and then directly plating an Sn or Sn alloy thereon. There is. This base plating layer has a base material component (alloy component such as Cu or Zn) of Sn or S on the surface.
It is provided to suppress diffusion into the n-alloy. In particular, when the base plating layer is a plating layer made of Ni or a Ni alloy, it has a great effect of delaying the above diffusion to Sn or the Sn alloy on the surface even in a high temperature environment. Therefore, the S
The characteristics of n and Sn alloys are secured.

【0004】しかしながら、NiやNi合金の下地めっ
き層を有する上記した材料の場合であっても、次のよう
な問題が生じている。例えば自動車のエンジンルームの
エンジン付近のようなとくに高温となる箇所で用いられ
ると、やはり、基材のCuや、下地のNi、Ni合金が
経時的に表面めっき層側へ拡散していく。そしてある時
間の経過後にあっては、表面めっき層は当初のSnやS
n合金でなくなり、事実上、SnやSn合金から成る表
面めっき層が消失してしまう。その結果、そのめっき材
料は本来の性能を発揮しなくなる。
However, even in the case of the above-mentioned material having the undercoat layer of Ni or Ni alloy, the following problems occur. For example, when it is used in a particularly high temperature place such as in the vicinity of an engine in an automobile engine room, Cu as a base material, Ni as a base material, and Ni and Ni alloys diffuse into the surface plating layer side over time. After a certain period of time, the surface plating layer is initially Sn or S
The surface plating layer made of Sn or Sn alloy disappears as a result of disappearing from the n alloy. As a result, the plated material does not exhibit its original performance.

【0005】このような問題は、SnやSn合金から成
る表面めっき層の厚みを厚くして、当該表面めっき層の
消失時間を長くすることにより解消することができる。
しかしながら、そのような対応策は資源の浪費を招く。
しかも、それだけではなく、そのめっき材料が例えば多
数の端子を同時に嵌合するコネクタ(嵌合型コネクタ)
に用いられる場合、それの相手材への組み付け作業が困
難になるという問題を新たに引き起こすこともある。
Such a problem can be solved by increasing the thickness of the surface plating layer made of Sn or Sn alloy to prolong the disappearance time of the surface plating layer.
However, such countermeasures waste resources.
Moreover, not only that, but the plating material is, for example, a connector that fits a large number of terminals at the same time (fitting type connector)
When it is used for, it may cause a new problem that it becomes difficult to assemble it into the mating material.

【0006】ところで、嵌合型コネクタでは、オス端子
とメス端子を嵌合して電気的接続をとっている。そして
近年、自動車に搭載するコネクタ端子に関しては、伝送
情報の多量化、電子制御化の進展が進んでいる。そのこ
とに伴なって、コネクタピンの多極化が進んでいる。そ
の場合、端子の挿入力が今までと同じであるとするなら
ば、ピン数が増加した分だけコネクタの挿入力を大きく
することが必要となる。そのため、多極化したコネクタ
ピンに対しては、その挿入力を低減させることが強く要
望されている。
By the way, in the fitting type connector, the male terminal and the female terminal are fitted to each other for electrical connection. In recent years, with regard to connector terminals mounted on automobiles, the amount of transmission information is increasing and electronic control is progressing. Along with that, the number of poles of the connector pin is increasing. In that case, if the insertion force of the terminal is the same as before, it is necessary to increase the insertion force of the connector by the increased number of pins. Therefore, it is strongly demanded to reduce the insertion force of a multi-pole connector pin.

【0007】このような要望に応える端子としては、例
えば端子表面にAuめっき層を形成したものがある。そ
の端子を用いたときの挿入力は低減する。しかしなが
ら、Auは高価であるため、他方では、製造される端子
は高コストになるという問題がある。なお、コネクタ端
子としては、一般に、Cuのような導電性基材の表面に
Snめっきが施されているものが使用されている。この
端子の場合、Snは易酸化性材料であるため、大気中で
は、その表面には、常に、硬質なSn酸化皮膜が形成さ
れた状態になっている。
As a terminal which meets such a demand, there is, for example, one in which an Au plating layer is formed on the surface of the terminal. The insertion force when using that terminal is reduced. However, since Au is expensive, on the other hand, there is a problem in that the manufactured terminals are expensive. As the connector terminal, generally, a conductive base material such as Cu having a surface plated with Sn is used. In the case of this terminal, since Sn is an easily oxidizable material, a hard Sn oxide film is always formed on its surface in the atmosphere.

【0008】そして、この端子を挿入すると、上記した
硬質のSn酸化皮膜が相手材との嵌合時に破れる。そし
て、その下に位置する未酸化のSnめっき層と相手材と
が接触して両者間の電気的接続が実現する。しかしなが
ら、形成されているSnめっき層が薄い場合には、その
めっき層全体が酸化皮膜化するため、嵌合時に当該酸化
皮膜が破れにくくなる。しかも、基材がCuまたはCu
合金から成る場合は、高温環境下での実使用時に、表面
の薄いSnめっき層のSn成分と基材成分とが反応して
Cu成分が表面に露出し、表面にはCuの酸化皮膜が形
成される。その結果、相手材との接触信頼性を喪失して
しまう。
When this terminal is inserted, the above-mentioned hard Sn oxide film is broken at the time of fitting with the mating material. Then, the unoxidized Sn plating layer located thereunder and the mating material come into contact with each other to realize electrical connection between the two. However, when the formed Sn plating layer is thin, the entire plating layer forms an oxide film, which makes it difficult for the oxide film to break during fitting. Moreover, the base material is Cu or Cu
When it is made of an alloy, when actually used in a high temperature environment, the Sn component of the thin Sn plating layer on the surface reacts with the base component to expose the Cu component to the surface, and a Cu oxide film is formed on the surface. To be done. As a result, contact reliability with the mating material is lost.

【0009】このような問題は、表面のSnめっき層を
厚くすることにより発生しにくくすることができる。し
かしながら、その場合には、嵌合時に相手材との挿入力
が大きくなるという新たな問題が生ずる。このようなこ
とから、とくに高温環境下においては、高価なAuめっ
き端子を使用するか、または、表面のSnめっき層の厚
みが厚く、またピン数が少ないSnめっき端子しか使用
することができないという問題があった。
Such a problem can be suppressed by increasing the thickness of the Sn plating layer on the surface. However, in that case, a new problem arises that the insertion force with the mating material becomes large at the time of fitting. For this reason, particularly in a high temperature environment, it is possible to use expensive Au-plated terminals or only Sn-plated terminals with a thick Sn plating layer on the surface and a small number of pins. There was a problem.

【0010】ところで、端子の表面にSnまたはSn合
金から成るめっき層を形成する場合、一般に、光沢Sn
めっきとリフローSnめっきが適用されている。これら
のうち、光沢Snめっきによって形成されためっき層の
場合、そのめっき層にはめっき処理時に用いた添加剤成
分が多く含有されている。また、めっきSnの結晶粒径
は微細になる。そのため、めっき層表面の潤滑性が優
れ、かつ、嵌合・摺動時の削れ量も少なくなる。その結
果、嵌合時の挿抜性は優れている。しかしながら、結晶
粒径が微細であるため、高温環境下で用いられると、基
材の成分の、粒界拡散に基づく拡散速度が大きくなって
当該基材成分が表面に拡散してくることがある。すなわ
ち、光沢Snめっきの材料は耐熱性に劣る。
By the way, when a plating layer made of Sn or a Sn alloy is formed on the surface of a terminal, in general, a gloss Sn is used.
Plating and reflow Sn plating are applied. Among these, in the case of a plating layer formed by bright Sn plating, the plating layer contains a large amount of additive components used during the plating process. Further, the crystal grain size of the plating Sn becomes fine. Therefore, the lubricity of the surface of the plating layer is excellent, and the amount of abrasion during fitting / sliding is reduced. As a result, the mating / unmating property at the time of fitting is excellent. However, since the crystal grain size is fine, when used in a high temperature environment, the diffusion rate of the components of the base material due to grain boundary diffusion increases, and the base material components may diffuse to the surface. . That is, the material of bright Sn plating is inferior in heat resistance.

【0011】一方、リフローSnめっきの場合は、全体
のめっき処理終了後に、その表面めっき層を加熱溶融す
る。そのため、形成されたリフローめっき層では、めっ
きSnの結晶粒径は大きくなり、かつ、めっき処理時に
混入した添加剤成分も除去されている。そのため、高温
環境下においても、基材成分の、粒界拡散に基づく拡散
速度は小さくなる。すなわち、その材料の耐熱性は向上
する。しかしながら、めっきSnの結晶粒径が大きいの
で、嵌合・摺動時の削れ量は大きくなり、かつ、添加剤
成分も少ないので潤滑性に劣り、その挿抜性は劣化す
る。
On the other hand, in the case of reflow Sn plating, the surface plating layer is heated and melted after the entire plating process is completed. Therefore, in the formed reflow plating layer, the crystal grain size of the plating Sn is large, and the additive component mixed during the plating process is also removed. Therefore, even under a high temperature environment, the diffusion rate of the base material component based on the grain boundary diffusion becomes small. That is, the heat resistance of the material is improved. However, since the crystal grain size of the plating Sn is large, the amount of shaving at the time of fitting / sliding is large, and since the additive component is also small, the lubricity is poor and the insertability thereof is deteriorated.

【0012】このようなことから、Snめっき層の耐熱
性と挿抜性を高めるために、様々な方法が提案されてい
る。例えば、特開平8−7940号公報や特開平4−3
29891号公報には、耐熱性の向上を目的として、S
nめっき層の下地として、高融点金属、とくにNiのめ
っき層を形成する方法が開示されている。この方法によ
れば、温度領域が100〜120℃程度である場合に
は、Niめっき層が基材成分(CuやZnなどの合金成
分)とSnめっき層のSn成分との反応を抑制し、しか
もNiとSnとの反応速度が小さいので耐熱効果が得ら
れる。しかしながら、140℃以上の高温環境下におい
ては、NiとSnとの反応速度が大きくなり、表面Sn
めっき層の変質が起こり、耐熱効果が得られなくなる。
Under these circumstances, various methods have been proposed in order to enhance the heat resistance and insertability of the Sn plating layer. For example, JP-A-8-7940 and JP-A-4-3
Japanese Patent No. 29891 discloses S for the purpose of improving heat resistance.
A method of forming a plating layer of a refractory metal, especially Ni, as a base of the n plating layer is disclosed. According to this method, when the temperature range is about 100 to 120 ° C., the Ni plating layer suppresses the reaction between the base material component (alloy component such as Cu and Zn) and the Sn component of the Sn plating layer, Moreover, since the reaction rate between Ni and Sn is small, a heat resistance effect can be obtained. However, in a high temperature environment of 140 ° C. or higher, the reaction rate between Ni and Sn increases and the surface Sn
Deterioration of the plating layer occurs and heat resistance cannot be obtained.

【0013】また、特開平11−121075号公報や
特開平10−302864号公報には、挿抜性を向上さ
せるために、表面のSnめっき層の厚みを薄くする方法
が開示されている。この方法で形成された表面Snめっ
き層の場合、嵌合・摺動性における削れ量は低減して挿
抜性が良好になる。しかしながら、Snめっき層の厚み
が薄いので、小さな熱履歴によっても表面のSnめっき
層は基材との間の拡散で合金化して消滅してしまい、相
手材との接触抵抗は増大してしまう。
Further, Japanese Patent Laid-Open No. 11-121075 and Japanese Patent Laid-Open No. 10-302864 disclose a method of reducing the thickness of the Sn plating layer on the surface in order to improve the inserting / removing property. In the case of the surface Sn plating layer formed by this method, the amount of abrasion in fitting / sliding property is reduced and the insertability / extractability is improved. However, since the thickness of the Sn plating layer is thin, the Sn plating layer on the surface is alloyed and disappears due to diffusion with the base material even with a small heat history, and the contact resistance with the counterpart material increases.

【0014】このように、表面にSnめっき層を形成し
た従来のめっき材料の場合、その耐熱性と挿抜性の両立
は非常に困難であるという問題があった。
As described above, in the case of the conventional plating material having the Sn plating layer formed on the surface thereof, there is a problem that it is very difficult to achieve both heat resistance and insertability / extractability.

【0015】[0015]

【発明が解決しようとする課題】本発明は、表面にSn
またはSn合金のめっき層が形成されているめっき材料
において、高温環境下にあっても、当該めっき層と基材
や下地めっき層との間で拡散反応が遅くなるように設計
されているので、耐熱性が良好なめっき材料の提供を目
的とし、また、上記した良好な耐熱性とともに挿抜性も
良好であり、高温環境下で使用される嵌合型コネクタや
接触子などの材料として好適なめっき材料の提供を目的
とする。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
Alternatively, in a plating material on which a Sn alloy plating layer is formed, the diffusion reaction between the plating layer and the base material or underlying plating layer is slowed even under a high temperature environment. Plating for the purpose of providing a plating material with good heat resistance, and also with good heat resistance as described above as well as good mating / unmating properties, making it suitable as a material for mating connectors and contacts used in high temperature environments. The purpose is to provide materials.

【0016】更に、本発明は、上記しためっき材料の製
造方法、およびそのめっき材料を用いた電気・電子部
品、例えば嵌合型コネクタ、接触子の提供を目的とす
る。
A further object of the present invention is to provide a method for producing the above-mentioned plating material, and an electric / electronic component using the plating material, such as a fitting type connector and a contact.

【0017】[0017]

【課題を解決するための手段】上記した目的を達成する
ために、本発明においては、導電性基体の表面に、周期
律表4族、5族、6族、7族、8族、9族、もしくは1
0族に含まれるいずれか1種の金属またはそれを主成分
とする合金から成る下地めっき層と、CuまたはCu合
金から成る中間めっき層と、SnまたはSn合金から成
る表面めっき層とがこの順序で形成されていることを特
徴とするめっき材料が提供される。
In order to achieve the above-mentioned object, in the present invention, the surface of a conductive substrate is provided with groups 4, 5, 6, 7, 7 and 8 and 9 of the periodic table. Or 1
The undercoat plating layer made of any one metal included in Group 0 or an alloy containing it as a main component, the intermediate plating layer made of Cu or Cu alloy, and the surface plating layer made of Sn or Sn alloy are in this order. A plating material is provided.

【0018】その場合、前記下地めっき層の厚みが0.
05〜2μmであり、かつ前記中間めっき層の厚みが
0.01〜1μmであることを好適とするめっき材料
と、前記表面めっき層の厚みが、前記中間めっき層の厚
みの1.9倍以上の厚みになっていることを好適とする
めっき材料が提供される。また、本発明においては、導
電性基材の表面に、周期律表4族、5族、6族、7族、
8族、9族、もしくは10族に含まれるいずれか1種の
金属またはそれを主成分とする合金から成る下地めっき
層と、CuまたはCu合金から成る中間めっき層と、S
nまたはSn合金から成る表面めっき層をこの順序で形
成することを特徴とするめっき材料の製造方法が提供さ
れ、好適には、前記中間めっき層を形成したのち、前記
中間めっき層の上に、Snめっき層と、Ag,Bi,C
u,In,PbおよびSbの群から選ばれる少なくとも
1種から成るめっき層とをこの順序で形成し、ついでリ
フロー処理または熱拡散処理を行うめっき材料の製造方
法が提供される。
In this case, the thickness of the base plating layer is 0.
05-2 μm, and the thickness of the intermediate plating layer is preferably 0.01-1 μm, and the thickness of the surface plating layer is 1.9 times or more the thickness of the intermediate plating layer. A plating material having a thickness of 10 mm is provided. In addition, in the present invention, on the surface of the conductive base material, a periodic table group 4, group 5, group 6, group 7,
An underplating layer made of any one of the metals belonging to Group 8, 9 or 10 or an alloy containing it as a main component; an intermediate plating layer made of Cu or a Cu alloy;
There is provided a method for producing a plating material, characterized in that a surface plating layer made of an n or Sn alloy is formed in this order, and preferably, after forming the intermediate plating layer, on the intermediate plating layer, Sn plating layer and Ag, Bi, C
There is provided a method for producing a plating material in which a plating layer made of at least one selected from the group consisting of u, In, Pb and Sb is formed in this order, and then reflow treatment or heat diffusion treatment is performed.

【0019】また、本発明においては、上記しためっき
材料を用いた電気・電子部品、具体的には、嵌合型コネ
クタや接触子が提供される。
Further, the present invention provides an electric / electronic component using the above-mentioned plating material, specifically, a fitting type connector or a contactor.

【0020】[0020]

【発明の実施の形態】本発明のめっき材料は、後述する
ような4層構造になっている。そして、各層の構成材料
や厚みは、前記した耐熱性の向上や、耐熱性と挿抜性を
同時に向上させることとの関係で後述するように設計さ
れる。まず、本発明のめっき材料は、図1で示したよう
に、全体として、導電性基材1の上に、後述する下地め
っき層2、中間めっき層3、および表面めっき層4がこ
の順序で形成されている。このめっき材料は、下地めっ
き層2と表面めっき層4の間に、中間めっき層3が介在
し、この中間めっき3が後述する機能を発揮することに
より、高温環境下における表面めっき層4の消失が抑制
されるところに最大の特徴を有している。
BEST MODE FOR CARRYING OUT THE INVENTION The plating material of the present invention has a four-layer structure as described later. The constituent material and thickness of each layer are designed as described later in relation to the above-mentioned improvement in heat resistance and the simultaneous improvement in heat resistance and insertability / extractability. First, in the plating material of the present invention, as shown in FIG. 1, as a whole, an underlying plating layer 2, an intermediate plating layer 3, and a surface plating layer 4 to be described later are arranged in this order on a conductive base material 1. Has been formed. In this plating material, the intermediate plating layer 3 is interposed between the base plating layer 2 and the surface plating layer 4, and the intermediate plating 3 exhibits the function described later, whereby the surface plating layer 4 disappears in a high temperature environment. Has the greatest feature where is suppressed.

【0021】まず、導電性基材1の材料は格別限定され
るものではなく、例えば接続コネクタとしての用途を考
慮し、要求される機械的強度、耐熱性、導電性に応じ
て、例えば、純銅;リン青銅、黄銅、洋白、ベリリウム
銅、コルソン合金のような銅合金;純鉄、ステンレス鋼
のような鉄合金;各種のニッケル合金;Cu被覆Fe材
やNi被覆Fe材のような複合材料などから適宜に選定
すればよい。
First, the material of the conductive base material 1 is not particularly limited, and, for example, in consideration of its use as a connection connector, pure copper may be used depending on the required mechanical strength, heat resistance and conductivity. Copper alloys such as phosphor bronze, brass, nickel silver, beryllium copper, Corson alloy; pure iron, iron alloys such as stainless steel; various nickel alloys; composite materials such as Cu-coated Fe material and Ni-coated Fe material It may be appropriately selected from the above.

【0022】これらの材料のうち、CuまたはCu合金
が好適である。なお、導電性基材1がCu系材料でない
場合は、その表面にCuまたはCu合金のめっきを施し
てから実使用に供すると、めっき膜の密着性や耐食性が
更に向上する。この導電性基材1の上に形成されている
下地めっき層2は、基材1と表面めっき層との密着強度
を確保するために設けられるとともに、基材の成分が表
層側に熱拡散することを防止するバリア層としても機能
する。具体的には、周期律表4族元素(Ti,Zr,H
f)、5族元素(V,Nb,Ta)、6族元素(Cr,
Mo,W)、7族元素(Mn,Tc,Re)、8族元素
(Fe,Ru,Os)、9族元素(Co,Rh,I
r)、10族元素(Ni,Pd,Pt)のいずれか、ま
たはそれを主成分とする合金で形成されている。
Of these materials, Cu or Cu alloy is preferable. If the conductive base material 1 is not a Cu-based material, the surface of the conductive base material 1 may be plated with Cu or a Cu alloy before being used for practical use, so that the adhesion and corrosion resistance of the plated film are further improved. The base plating layer 2 formed on the conductive base material 1 is provided to secure the adhesion strength between the base material 1 and the surface plating layer, and the components of the base material are thermally diffused to the surface layer side. It also functions as a barrier layer for preventing this. Specifically, elements of Group 4 of the periodic table (Ti, Zr, H
f) Group 5 element (V, Nb, Ta), Group 6 element (Cr,
Mo, W), Group 7 elements (Mn, Tc, Re), Group 8 elements (Fe, Ru, Os), Group 9 elements (Co, Rh, I)
r) It is formed of any one of Group 10 elements (Ni, Pd, Pt) or an alloy containing it as a main component.

【0023】これらの金属はいずれも融点が1000℃
以上の高融点金属である。そして、例えば接続コネクタ
の使用環境温度は一般に200℃以下であるため、この
ような使用環境下では、この下地めっき層2は熱拡散を
起こしにくいことはもち論のこと、基材成分の表層側へ
の熱拡散を有効に防止する。上記した金属のうち、価格
の点、めっき処理が行いやすい点などから、Ni,C
o,Feが好適である。そして、それらを主成分とする
合金としては、例えば、Ni−P,Ni−Sn,Co−
P,Ni−Co,Ni−Co−P,Ni−Cu,Ni−
Cr,Ni−Zn,Ni−Feなどをあげることができ
る。
Each of these metals has a melting point of 1000 ° C.
The above-mentioned refractory metals. And, for example, since the operating environment temperature of the connector is generally 200 ° C. or lower, it is a matter of course that the undercoat plating layer 2 is unlikely to cause thermal diffusion under such an operating environment. Effectively prevent heat diffusion to the. Of the above metals, Ni, C are used because of their price and ease of plating.
o and Fe are preferred. And as an alloy containing them as main components, for example, Ni-P, Ni-Sn, Co-
P, Ni-Co, Ni-Co-P, Ni-Cu, Ni-
Cr, Ni-Zn, Ni-Fe, etc. can be mentioned.

【0024】なお、上記した下地めっき層は例えばPV
D法のようなめっき法によっても形成することができる
が、湿式めっき法を適用することの方が好ましい。ここ
で、めっき材料の耐熱性の向上を主たる目的とする場
合、下地めっき層2の厚みは0.05〜2μmの範囲内
に設定されていることが好ましい。この下地めっき層2
の厚みが薄すぎると上記した効果は充分に発揮されなく
なり、また厚すぎるとめっき歪みが大きくなって基材1
から剥離しやくすくなるからである。
The above-mentioned base plating layer is, for example, PV.
It can be formed by a plating method such as the D method, but it is preferable to apply the wet plating method. Here, when the main purpose is to improve the heat resistance of the plating material, the thickness of the base plating layer 2 is preferably set within the range of 0.05 to 2 μm. This base plating layer 2
If the thickness of the base material is too thin, the above-mentioned effects cannot be sufficiently exhibited, and if it is too thick, the plating distortion becomes large and the base material 1
This is because it peels off easily and becomes dull.

【0025】また、めっき材料の耐熱性の向上ととも
に、挿抜性の向上を意図する場合、下地めっき層2の厚
みは、格別限定されるものではないが、上記した基材成
分の表層側の拡散防止効果を発揮させるためには、0.
25μm以上であればよい。しかし、あまり厚くしても
無意味であるばかりではなく、端子への加工時に加工割
れを起こす場合もあるので、加工性を考慮して、その厚
みの上限は概ね0.5〜2μmの範囲内に設定すればよ
い。
When it is intended to improve the heat resistance of the plating material as well as the insertion / removal property, the thickness of the base plating layer 2 is not particularly limited, but the diffusion of the above-mentioned base material components on the surface layer side. In order to exert the preventive effect, 0.
It may be 25 μm or more. However, not only is it meaningless if it is made too thick, but it may cause processing cracks during processing into terminals. Therefore, considering the workability, the upper limit of the thickness is generally within the range of 0.5 to 2 μm. You can set it to.

【0026】次に、この下地めっき層2の上に形成され
る中間めっき層3は、CuまたはCu合金から成る。そ
して、この中間めっき層3は、後述する態様で下地めっ
き層2の成分と表面めっき層4のSn成分とが相互拡散
することを防止する層として機能する。中間めっき層3
のCu成分と下地めっき層2の成分(前記した金属また
はその合金)との反応速度よりも、上記Cu成分と表面
めっき層4のSn成分との反応速度の方が大きい。した
がって、このめっき材料が高温環境下に曝されると、表
面めっき層4のSn成分の中間めっき層3への熱拡散が
進行し、結果として、中間めっき層3は、図2で示した
ように、Sn−Cu金属間化合物から成る層3’に転化
していく。同時に、めっき材料の表面めっき層4のSn
成分は、中間めっき層3との界面を起点として中間めっ
き層3の方へ拡散移動して上記金属間化合物に転化して
いく。その結果、Sn(またはSn合金)が残存してい
る層であるめっき層4’の厚みは薄くなる。そして、中
間めっき層3のCu成分が上層側から拡散してくるSn
やSn合金を受容し終わった時点で、SnやSn合金と
CuやCu合金間の相互拡散は停止する。
Next, the intermediate plating layer 3 formed on the base plating layer 2 is made of Cu or Cu alloy. The intermediate plating layer 3 functions as a layer that prevents the components of the base plating layer 2 and the Sn component of the surface plating layer 4 from interdiffusing in a manner described later. Intermediate plating layer 3
The reaction rate between the Cu component and the Sn component of the surface plating layer 4 is higher than the reaction rate between the Cu component and the component of the underlying plating layer 2 (the metal or its alloy described above). Therefore, when this plating material is exposed to a high temperature environment, thermal diffusion of the Sn component of the surface plating layer 4 to the intermediate plating layer 3 progresses, and as a result, the intermediate plating layer 3 is as shown in FIG. Then, it is converted into a layer 3 ′ made of an Sn—Cu intermetallic compound. At the same time, Sn of the surface plating layer 4 of the plating material
The components diffuse and move toward the intermediate plating layer 3 starting from the interface with the intermediate plating layer 3 and are converted into the intermetallic compound. As a result, the thickness of the plating layer 4 ', which is a layer in which Sn (or Sn alloy) remains, becomes thin. Then, the Sn component in which the Cu component of the intermediate plating layer 3 diffuses from the upper layer side
Upon completion of receiving the Sn or Sn alloy, the mutual diffusion between the Sn or Sn alloy and Cu or the Cu alloy stops.

【0027】その結果、図2で示したように、図1の中
間めっき層3と表面めっき層4の一部は、金属間化合物
から成る層3’になる。また図1の表面めっき層4は、
その厚みが薄くなっているが、SnやSn合金から成る
層4’として残ることになる。このように、下地めっき
層2とSnやSn合金から成る層4’の間に金属間化合
物の層3’が介在していることにより、層4’と下地め
っき層2の間の反応は抑制されることになる。
As a result, as shown in FIG. 2, a part of the intermediate plating layer 3 and the surface plating layer 4 of FIG. 1 becomes a layer 3'made of an intermetallic compound. The surface plating layer 4 in FIG.
Although its thickness is thin, it remains as a layer 4 ′ made of Sn or Sn alloy. As described above, the intermetallic compound layer 3 ′ is interposed between the base plating layer 2 and the layer 4 ′ made of Sn or Sn alloy, so that the reaction between the layer 4 ′ and the base plating layer 2 is suppressed. Will be done.

【0028】したがって、このめっき材料の場合、高温
環境下にあっては図2で示した層構造の状態、すなわ
ち、SnやSn合金とCuやCu合金の相互拡散は抑制
された状態で使用されることになる。そのため、Snや
Sn合金から成る表面めっき層が使用過程で消失してし
まうことはなくなる。Sn−Cu金属間化合物として
は、Cu6Sn5やCu3Snがよく知られている。そし
て、Cu6Sn5の場合、Cuの1体積に対しSnの1.
9体積が反応して生成した化合物である。またCu3S
nの場合は、Cuの1体積に対しSnの0.8体積が反
応して生成した化合物である。
Therefore, in the case of this plating material, under the high temperature environment, it is used in the state of the layer structure shown in FIG. 2, that is, in the state where the mutual diffusion of Sn or Sn alloy and Cu or Cu alloy is suppressed. Will be. Therefore, the surface plating layer made of Sn or Sn alloy does not disappear during the use process. As the Sn-Cu intermetallic compound, Cu6Sn5 and Cu3Sn are well known. In the case of Cu6Sn5, one volume of Cu is 1.
Nine volumes are the compound produced by the reaction. Also Cu3S
In the case of n, it is a compound formed by reacting 0.8 volume of Sn with 1 volume of Cu.

【0029】したがって、表面めっき層4の厚みが中間
めっき層3の厚みの1.9倍以上になっていれば、上記
した相互拡散により、中間めっき層3のCu成分が全て
上記したSn−Cu金属間化合物に転化してしまったと
しても、いまだ、SnまたはSn合金から成る表面めっ
き層4’は残存する。そして、中間めっき層3のCu成
分は、Sn−Cu金属間化合物として固定され、その熱
拡散が抑制されている。
Therefore, if the thickness of the surface plating layer 4 is 1.9 times or more the thickness of the intermediate plating layer 3, the above-mentioned mutual diffusion causes all the Cu components of the intermediate plating layer 3 to be the above-mentioned Sn-Cu. Even if it is converted into an intermetallic compound, the surface plating layer 4 ′ made of Sn or Sn alloy still remains. Then, the Cu component of the intermediate plating layer 3 is fixed as a Sn-Cu intermetallic compound, and its thermal diffusion is suppressed.

【0030】このようなことから、本発明のめっき材料
においては、表面めっき層4の厚みを中間めっき層3の
厚みの1.9倍以上の値に設計することが好ましい。こ
のようにすることにより、そのめっき材料は、高温環境
下にあっても、表面めっき層4' は必ずSnまたはSn
合金のままであるため、その接触信頼性は確保される。
From the above, in the plating material of the present invention, the thickness of the surface plating layer 4 is preferably designed to be 1.9 times or more the thickness of the intermediate plating layer 3. By doing so, even if the plating material is in a high temperature environment, the surface plating layer 4'will always contain Sn or Sn.
Since the alloy remains as it is, its contact reliability is secured.

【0031】その場合、中間めっき層3の厚みを薄くし
すぎると、例えば中間めっき層3がCuから成る場合に
は、その層には多数の微細孔が存在している。そのた
め、下地めっき層2のNi成分やCu成分などがこの微
細孔を通って中間めっき層に拡散してくるようになる。
また、中間めっき層3の厚みを厚くしすぎると、表面め
っき層4の厚みを可成り厚くしない限り、そのSnやS
n合金が上記した相互拡散で全て消費されてしまい、結
局、表面にはSnまたはSn合金が残存しなくなってし
まう。このことを避けるために、表面めっき層4を厚く
すると、それは、その材料を嵌合型コネクタと使用した
ときに、その挿入抵抗が大きくなってしまう。
In this case, if the thickness of the intermediate plating layer 3 is too thin, for example, when the intermediate plating layer 3 is made of Cu, a large number of fine holes are present in the layer. Therefore, the Ni component and the Cu component of the base plating layer 2 will diffuse into the intermediate plating layer through these fine holes.
Further, if the thickness of the intermediate plating layer 3 is too thick, unless the thickness of the surface plating layer 4 is considerably increased, the Sn or S
The n alloy is completely consumed by the above-mentioned mutual diffusion, and eventually Sn or Sn alloy does not remain on the surface. To avoid this, if the surface plating layer 4 is made thick, it will have a large insertion resistance when the material is used with a mating connector.

【0032】このようなことから、中間めっき層3の厚
みは0.01〜1.0μmの範囲内に設定することが好
ましい。中間めっき層3の形成に用いるCu合金として
は、例えば、Cu−Zn,Cu−Sn,Cu−Ni,N
i−Snなどをあげることができる。その場合、Cu成
分の量は、上記したCu−Sn系金属間化合物の生成を
阻害しない量であることが必要であるが、例えば50質
量%以上の値であればよい。
Therefore, the thickness of the intermediate plating layer 3 is preferably set within the range of 0.01 to 1.0 μm. As the Cu alloy used for forming the intermediate plating layer 3, for example, Cu-Zn, Cu-Sn, Cu-Ni, N
i-Sn etc. can be mentioned. In that case, the amount of the Cu component needs to be an amount that does not inhibit the formation of the Cu—Sn intermetallic compound described above, but may be, for example, a value of 50% by mass or more.

【0033】なお、本発明のめっき材料の場合、中間め
っき層3と表面めっき層4の厚みに関して、上記した関
係、すなわち、後者の厚みを前者の厚みの1.9倍以上
に設定するという関係を維持した状態で表面めっき層4
の厚みを薄くすることができる。その結果、挿抜性を高
めることができる。例えば、中間めっき層3の厚みを
0.49μm以下とすれば、めっき材料における表面め
っき層の厚みを1μm以下にしても、充分な耐熱性を確
保した状態で良好な挿抜性を発揮させることができる。
また、中間めっき層3の厚みを0.3μm以下とすれ
ば、表面めっき層4の厚みを更に薄い0.6μm程度に
設定することができて好適である。
In the case of the plating material of the present invention, the relationship between the thicknesses of the intermediate plating layer 3 and the surface plating layer 4 is as described above, that is, the thickness of the latter is set to be 1.9 times or more the thickness of the former. Surface plating layer 4 while maintaining
The thickness of can be reduced. As a result, the ease of insertion and removal can be improved. For example, if the thickness of the intermediate plating layer 3 is 0.49 μm or less, even if the thickness of the surface plating layer of the plating material is 1 μm or less, good insertability / extractability can be exhibited while ensuring sufficient heat resistance. it can.
Further, if the thickness of the intermediate plating layer 3 is 0.3 μm or less, the thickness of the surface plating layer 4 can be set to a thinner thickness of about 0.6 μm, which is preferable.

【0034】既に説明したように、表面めっき層4はS
nまたはSn合金で形成され、めっき材料としての電気
接触特性、耐食性、はんだ付け性を確保するために設け
られる。とくにSn合金で形成すると、挿抜性を更に向
上させることができるので好適である。その場合のSn
合金としては、例えば、SnにAg,Bi,Cu,I
n,Pb,Sbの1種または2種以上が含有されている
ものを好適例とする。これらのSn合金は、いずれも、
はんだ付け性が良好で、また、表面めっき層の形成時に
ウイスカを発生しないからである。
As described above, the surface plating layer 4 is S
It is formed of an n- or Sn-alloy and is provided to secure the electrical contact characteristics, corrosion resistance, and solderability as a plating material. In particular, it is preferable to form the Sn alloy because the insertability can be further improved. Sn in that case
As an alloy, for example, Sn, Ag, Bi, Cu, I
A preferable example is one containing one or more of n, Pb and Sb. All of these Sn alloys are
This is because the solderability is good and whiskers do not occur when the surface plating layer is formed.

【0035】なお、Pbは環境への流出が問題となって
いるので、できるだけ、Pbを含むSn合金の使用は避
けた方がよい。このSn合金めっき層は所定の合金めっ
き浴を用いて形成することができるが、次のような方法
で形成すると製造コストを大幅に低減することができて
好適である。
Since Pb has a problem of flowing out to the environment, it is better to avoid using Sn alloy containing Pb as much as possible. This Sn alloy plating layer can be formed using a predetermined alloy plating bath, but it is preferable to form it by the following method because the manufacturing cost can be significantly reduced.

【0036】すなわち、基材上に、下地めっき層、中間
めっき層を形成したのち、更に、Snめっき層、および
Ag,Bi,Cu,In,Pb,Sbの1種または2種
以上の金属のめっき層をこの順序で積層する。なお、上
記したSnめっき層はSn合金めっき層であってもよ
い。ついで、この積層体全体に対し、リフロー処理また
は熱拡散処理を施して、上記した金属めっき層の金属と
Sn層(またはSn合金めっき層)のSnとの間で選択
的な熱拡散を行って、両者を合金化する。例えば、リフ
ロー処理の場合、実体温度230〜300℃で5秒以下
のリフロー処理を行い、また熱拡散処理の場合は、温度
100〜120℃で数時間行えばよい。この程度の温度
であれば、他の層間での熱拡散はほとんど起こらないか
らである。
That is, after a base plating layer and an intermediate plating layer are formed on a base material, a Sn plating layer and one or more metals of Ag, Bi, Cu, In, Pb and Sb are further added. The plating layers are laminated in this order. The Sn plating layer described above may be a Sn alloy plating layer. Then, the entire laminated body is subjected to a reflow treatment or a thermal diffusion treatment to selectively perform thermal diffusion between the metal of the metal plating layer and Sn of the Sn layer (or Sn alloy plating layer). , Alloy them. For example, in the case of reflow treatment, the reflow treatment may be performed at a substantial temperature of 230 to 300 ° C. for 5 seconds or less, and in the case of thermal diffusion treatment, it may be performed at a temperature of 100 to 120 ° C. for several hours. This is because at this temperature, thermal diffusion between other layers hardly occurs.

【0037】なお、本発明のめっき材料においては、基
材と下地めっき層の間、下地めっき層と中間めっき層の
間、または中間めっき層と表面めっき層の間に、各めっ
き層の厚みよりも薄い異種材料のめっき層を介在させて
もよい。また、素材形状としては、条材、丸線材、角線
材などの形状のいずれであってもよい。
In addition, in the plating material of the present invention, the thickness of each plating layer may be different between the base material and the base plating layer, between the base plating layer and the intermediate plating layer, or between the intermediate plating layer and the surface plating layer. Also, a thin plating layer of different materials may be interposed. Further, the material shape may be any shape such as a strip material, a round wire material, and a square wire material.

【0038】[0038]

【実施例】実施例1〜24,比較例1〜9 黄銅条に、電解脱脂、酸洗を順次行ったのち、下地めっ
き層、中間めっき層、表面めっき層を順次形成して、表
2、表3で示した各種のめっき材料を製造した。なお、
各層形成時のめっき条件は表1に示したとおりである。
EXAMPLES Examples 1 to 24, Comparative Examples 1 to 9 After electrolytic degreasing and pickling were sequentially performed on brass strips, a base plating layer, an intermediate plating layer and a surface plating layer were sequentially formed, and Table 2, Various plating materials shown in Table 3 were manufactured. In addition,
The plating conditions for forming each layer are as shown in Table 1.

【0039】[0039]

【表1】 [Table 1]

【0040】製造した各めっき材料を表2、表3で示し
た温度に加熱し、そのときの表面めっき層の残存厚みを
下記の仕様で測定した。また、初期時における動摩擦係
数を下記の仕様で測定した。 残存厚み:めっき材料を温度100〜160℃のエアバ
スの中に120時間放置したのち、定電流溶解法で測
定。 動摩擦係数:バウデン型摩擦試験器を用い、荷重294
mN、摺動距離10mm、摺動速度100M/min、摺動回
数1回の条件下で測定。なお、相手材としては、板厚
0.25mmの黄銅条にリフローSnめっきを1μm施し
たのち、0.5mmRに張り出し加工を行ったものを用い
た。 以下の結果を一括して表2および表3に示す。
The produced plating materials were heated to the temperatures shown in Tables 2 and 3, and the residual thickness of the surface plating layer at that time was measured according to the following specifications. Moreover, the dynamic friction coefficient at the initial stage was measured according to the following specifications. Remaining thickness: The plating material was left in an air bath at a temperature of 100 to 160 ° C. for 120 hours and then measured by a constant current melting method. Dynamic friction coefficient: Load 294 using Bowden type friction tester
Measured under conditions of mN, sliding distance of 10 mm, sliding speed of 100 M / min, and number of sliding times of 1. The mating material used was a brass strip having a plate thickness of 0.25 mm, plated with 1 μm of reflow Sn, and then overhanged to 0.5 mmR. The following results are collectively shown in Tables 2 and 3.

【0041】[0041]

【表2】 [Table 2]

【0042】[0042]

【表3】 [Table 3]

【0043】表2および表3から次のことから明らかで
ある。 (1)実施例と比較例を対比すると、実施例は、全体と
して、環境温度が高温になっても、表面めっき層(S
n)が残存しており、しかも動摩擦係数が小さくなって
いる。そして、形成した表面めっき層の厚みが厚い実施
例のものほど加熱後における表面めっき層(Sn)の残
存厚みは厚くなっていて耐熱性を保持している。しか
し、他方では、動摩擦係数は、表面めっき層の厚みが薄
い実施例の方が小さくなっている。このようなことか
ら、表面めっき層の厚みが薄いものの方が挿抜性の点で
有利である。
It is clear from Tables 2 and 3 that: (1) Comparing the example with the comparative example, the example shows that the surface plated layer (S
n) remains, and the coefficient of dynamic friction is small. The thicker the surface plating layer formed is, the thicker the surface plating layer (Sn) remains after heating and the more heat resistant it is. On the other hand, however, the coefficient of dynamic friction is smaller in the embodiment in which the thickness of the surface plating layer is thinner. For this reason, the thinner surface plating layer is more advantageous in terms of insertability and removal.

【0044】(2)実施例7〜10のように、下地めっ
き層がNi層以外であっても、それが基体成分(Cuや
Znなどの合金成分)の表層側の拡散を防止するもので
あれば同様の効果が得られている。また、実施例6〜1
1のように、中間めっき層の、下地めっき層に対する反
応速度よりも、表面めっき層に対する反応速度の方が大
きい場合であっても同様の効果が得られている。
(2) As in Examples 7 to 10, even if the base plating layer is other than the Ni layer, it prevents diffusion of the base component (alloy component such as Cu or Zn) on the surface layer side. If there is, the same effect is obtained. Moreover, Examples 6 to 1
Even when the reaction speed of the intermediate plating layer with respect to the surface plating layer is higher than the reaction speed of the intermediate plating layer with respect to the underlying plating layer, the same effect is obtained.

【0045】実施例13の場合のように、中間めっき層
の厚みが薄いと、下地めっき層と表面めっき層の拡散を
抑制する効果は小さくなっている。実施例14と実施例
15を対比して明らかなように、表面めっき層が厚くな
ると耐熱性は向上し、薄くなると動摩擦係数が小さくな
って挿抜性が向上している。
When the thickness of the intermediate plating layer is thin as in the case of Example 13, the effect of suppressing the diffusion of the base plating layer and the surface plating layer is small. As is clear from comparison between Example 14 and Example 15, as the surface plating layer is thicker, the heat resistance is improved, and as it is thinner, the dynamic friction coefficient is smaller and the mating / releasing property is improved.

【0046】実施例25〜33、比較例10〜25 実施例3、実施例5、実施例9、実施例12、比較例
5、および比較例6のそれぞれの試料から、タブ幅が
2.3mmであるオス端子とメス端子を製作した。これら
オス端子とメス端子を、表4で示したように組み合わせ
て嵌合し、ついで嵌合した部材に対し温度160℃で1
20時間の熱処理を施したのち、各部材における端子間
の接触抵抗を測定した。なお、嵌合時の挿入は挿入力の
速度2mm/secで行い、挿入時のピーク強度を挿入力と
して測定した。n=5の平均値を求め、結果を表4に示
した。
Examples 25-33, Comparative Examples 10-25 From the respective samples of Example 3, Example 5, Example 9, Example 12, Example 5, and Comparative Example 6, the tab width was 2.3 mm. I made male and female terminals. These male and female terminals are combined and fitted as shown in Table 4, and then the mated members are placed at a temperature of 160 ° C for 1
After heat treatment for 20 hours, the contact resistance between the terminals of each member was measured. The insertion at the time of fitting was performed at an insertion force speed of 2 mm / sec, and the peak strength at the time of insertion was measured as the insertion force. The average value of n = 5 was determined, and the results are shown in Table 4.

【0047】また、接触抵抗は、端子にリードをはんだ
付けし、電流10mAを流して測定した。n=10の平均
値を求め、結果を表4に示した。
The contact resistance was measured by soldering a lead to the terminal and passing a current of 10 mA. The average value of n = 10 was calculated, and the results are shown in Table 4.

【0048】[0048]

【表4】 [Table 4]

【0049】表4から次のことが明らかである。 (1)実施例と比較例を対比すると、実施例の場合、全
体として嵌合時の挿入力は低く、しかも熱処理後の接触
抵抗が低くなっている。また、各実施例と各比較例にお
ける嵌合時の挿入力は概ね5.3〜6.5Nと低い値にな
っている。そして、オス端子に実施例のものを用いた方
が、メス端子に用いた場合よりも挿入力が低くなってい
る。これは、嵌合時においては、メス端子側は点接触状
態となって削れる箇所が1点になるが、オス端子側では
線状に接触していくので削れる箇所が線状になるためで
あると考えられる。
From Table 4, the following is clear. (1) Comparing the example with the comparative example, in the case of the example as a whole, the insertion force at the time of fitting is low and the contact resistance after heat treatment is low. In addition, the insertion force at the time of fitting in each of the examples and the comparative examples is a low value of approximately 5.3 to 6.5N. The insertion force of the male terminal of the embodiment is lower than that of the female terminal. This is because at the time of fitting, the female terminal side is in a point contact state and there is only one point to be shaved, but the male terminal side is in linear contact so that the shaved portion is linear. it is conceivable that.

【0050】したがって、低い挿入力を目的とする場合
には、オス端子側の表面めっき層(Sn)の厚みを薄く
することが有効であると考えられる。また、実施例にお
いて、熱処理後の接触抵抗が低い理由は、熱処理後にあ
っても本発明の実施例端子は表面めっき層(Sn)が残
存していることにより接触信頼性が向上しているためで
あると考えられる。他方、比較例端子を用いた場合は、
熱処理により表面めっき層(Sn)が消滅して接触抵抗
が高くなってしまう。
Therefore, it is considered effective to reduce the thickness of the surface plating layer (Sn) on the male terminal side when a low insertion force is intended. In addition, the reason why the contact resistance after the heat treatment is low in the examples is that the contact reliability is improved because the surface plating layer (Sn) remains in the example terminals of the present invention even after the heat treatment. Is considered to be. On the other hand, when using the comparative example terminal,
The heat treatment causes the surface plating layer (Sn) to disappear and the contact resistance to increase.

【0051】[0051]

【発明の効果】以上の説明で明らかなように、本発明の
めっき材料は、下地めっき層と表面めっき層の間にCu
またはCu合金から成る中間めっき層を介在させてお
り、そして表面めっき層と中間めっき層の厚みを、高温
環境下にあっても表面めっき層のSnまたはSn合金が
残存するように設計されている。
As is apparent from the above description, the plating material of the present invention is made of Cu between the base plating layer and the surface plating layer.
Alternatively, an intermediate plating layer made of a Cu alloy is interposed, and the thicknesses of the surface plating layer and the intermediate plating layer are designed so that Sn or Sn alloy of the surface plating layer remains even in a high temperature environment. .

【0052】したがって、このめっき材料は、耐熱性が
良好であり、また良好な耐熱性と挿抜性を兼ね備えてい
て、例えば自動車エンジンルーム内のような高温環境下
に配置されるコネクタ、また嵌合型コネクタ、接触子な
どの各種電気・電子部品用の材料として有用である。
Therefore, this plating material has good heat resistance, and also has good heat resistance and insertability / extractability. For example, the connector is placed in a high temperature environment such as an automobile engine room, and is also fitted. It is useful as a material for various electrical and electronic parts such as mold connectors and contacts.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のめっき材料の1例を示す断面図であ
る。
FIG. 1 is a cross-sectional view showing an example of a plating material of the present invention.

【図2】図1のめっき材料を高温環境下に曝したときの
層構造を示す断面図である。
FIG. 2 is a cross-sectional view showing a layer structure when the plating material of FIG. 1 is exposed to a high temperature environment.

【符号の説明】[Explanation of symbols]

1 導電性基材 2 下地めっき層 3 中間めっき層 3’ SnとCuとの相互拡散層 4 表面めっき層 4’ Sn残存めっき層 1 Conductive substrate 2 Undercoat layer 3 Intermediate plating layer Interdiffusion layer of 3'Sn and Cu 4 Surface plating layer 4'Sn residual plating layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 智 東京都千代田区丸の内2丁目6番1号 古 河電気工業株式会社内 (72)発明者 谷本 守正 東京都千代田区丸の内2丁目6番1号 古 河電気工業株式会社内 Fターム(参考) 4K024 AA03 AA04 AA14 AA21 AB03 CA01 CA04 CA06 DB02    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Satoshi Suzuki             2-6-1, Marunouchi, Chiyoda-ku, Tokyo             Kawa Electric Industry Co., Ltd. (72) Inventor Morimasa Tanimoto             2-6-1, Marunouchi, Chiyoda-ku, Tokyo             Kawa Electric Industry Co., Ltd. F-term (reference) 4K024 AA03 AA04 AA14 AA21 AB03                       CA01 CA04 CA06 DB02

Claims (13)

【特許請求の範囲】[Claims] 【請求項1】 導電性基体の表面に、周期律表4族、5
族、6族、7族、8族、9族、もしくは10族に含まれ
るいずれか1種の金属またはそれを主成分とする合金か
ら成る下地めっき層と、CuまたはCu合金から成る中
間めっき層と、SnまたはSn合金から成る表面めっき
層とがこの順序で形成されていることを特徴とするめっ
き材料。
1. A periodic table group 5 or 5 is formed on the surface of a conductive substrate.
Plating layer made of any one of the metals included in Group 6, 6, 7, 8, 9 or 10 or an alloy containing it as a main component, and an intermediate plating layer made of Cu or a Cu alloy And a surface plating layer made of Sn or a Sn alloy are formed in this order.
【請求項2】 前記表面めっき層は、リフロー処理され
た層である請求項1のめっき材料。
2. The plating material according to claim 1, wherein the surface plating layer is a layer subjected to reflow treatment.
【請求項3】 前記下地めっき層が、Ni,Co,もし
くはFeのいずれか1種の金属、または前記金属を主成
分とする合金から成る請求項1または2のめっき材料。
3. The plating material according to claim 1, wherein the base plating layer is made of any one metal of Ni, Co, and Fe or an alloy containing the metal as a main component.
【請求項4】 前記Sn合金が、Ag,Bi,Cu,I
n,Pb,およびSbの群から選ばれる少なくとも1種
を含有する請求項1〜3のいずれかのめっき材料。
4. The Sn alloy is Ag, Bi, Cu, I
The plating material according to claim 1, containing at least one selected from the group consisting of n, Pb, and Sb.
【請求項5】 前記下地めっき層の厚みが0.05〜2
μmであり、かつ、前記中間めっき層の厚みが0.01
〜1μmである請求項1〜4のいずれかのめっき材料。
5. The thickness of the base plating layer is 0.05 to 2
μm, and the thickness of the intermediate plating layer is 0.01
The plating material according to any one of claims 1 to 4, which has a thickness of ˜1 μm.
【請求項6】 前記表面めっき層の厚みが、前記中間め
っき層の厚みの1.9倍以上の厚みになっている請求項
1〜4のいずれかのめっき材料。
6. The plating material according to claim 1, wherein the thickness of the surface plating layer is 1.9 times or more the thickness of the intermediate plating layer.
【請求項7】 前記中間めっき層の厚みが0.05〜0.
49μmである請求項6のめっき材料。
7. The thickness of the intermediate plating layer is 0.05 to 0.5.
The plating material according to claim 6, which has a thickness of 49 μm.
【請求項8】 前記表面めっき層の厚みが1μm以下で
ある請求項7のめっき材料。
8. The plating material according to claim 7, wherein the surface plating layer has a thickness of 1 μm or less.
【請求項9】 前記導電性基材がCuまたはCu合金か
ら成る請求項1〜8のいずれかのめっき材料。
9. The plating material according to claim 1, wherein the conductive base material is made of Cu or a Cu alloy.
【請求項10】 導電性基材の表面に、周期律表4族、
5族、6族、7族、8族、9族、もしくは10族に含ま
れるいずれか1種の金属またはそれを主成分とする合金
から成る下地めっき層と、CuまたはCu合金から成る
中間めっき層と、SnまたはSn合金から成る表面めっ
き層をこの順序で形成することを特徴とするめっき材料
の製造方法。
10. A surface of a conductive substrate is provided with a periodic table group 4 group,
An underplating layer made of any one of the metals belonging to Group 5, 6, 7, 8, 9, or 10 or an alloy containing it as a main component, and an intermediate plating made of Cu or a Cu alloy. A method for producing a plating material, comprising forming a layer and a surface plating layer made of Sn or Sn alloy in this order.
【請求項11】 前記中間めっき層の上に、Snめっき
層またはSn合金めっき層、ならびに、Ag,Bi,C
u,In,Pb,およびSbの群から選ばれる少なくと
も1種から成るめっき層をこの順序で形成し、ついで、
リフロー処理または熱拡散処理を行う請求項10のめっ
き材料の製造方法。
11. A Sn plating layer or a Sn alloy plating layer, and Ag, Bi, C on the intermediate plating layer.
A plating layer made of at least one selected from the group consisting of u, In, Pb, and Sb is formed in this order, and then,
The method for producing a plating material according to claim 10, wherein the reflow treatment or the thermal diffusion treatment is performed.
【請求項12】 請求項1〜9のいずれかのめっき材料
から成ることを特徴とする電気・電子部品。
12. An electric / electronic component comprising the plating material according to any one of claims 1 to 9.
【請求項13】 電気・電子部品が、嵌合型コネクタま
たは接触子である請求項12の電気・電子部品。
13. The electric / electronic component according to claim 12, wherein the electric / electronic component is a fitting type connector or a contact.
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