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IN2014DN10277A - - Google Patents

Info

Publication number
IN2014DN10277A
IN2014DN10277A IN10277DEN2014A IN2014DN10277A IN 2014DN10277 A IN2014DN10277 A IN 2014DN10277A IN 10277DEN2014 A IN10277DEN2014 A IN 10277DEN2014A IN 2014DN10277 A IN2014DN10277 A IN 2014DN10277A
Authority
IN
India
Prior art keywords
data strobe
training
strobe signal
signal
enable signal
Prior art date
Application number
Other languages
English (en)
Inventor
Glenn A Dearth
Warren R Anderson
Anwar P Kashem
Richard W Reeves
Edoardo Prete
Gerald R Talbot
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of IN2014DN10277A publication Critical patent/IN2014DN10277A/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14Handling requests for interconnection or transfer
    • G06F13/16Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668Details of memory controller
    • G06F13/1689Synchronisation and timing concerns
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/42Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4204Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus
    • G06F13/4234Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus
    • G06F13/4243Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus with synchronous protocol
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1093Input synchronization
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076Timing circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1066Output synchronization
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222Clock generating, synchronizing or distributing circuits within memory device

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Synchronisation In Digital Transmission Systems (AREA)
  • Memory System (AREA)
  • Dram (AREA)
IN10277DEN2014 2012-05-22 2013-05-22 IN2014DN10277A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/477,642 US8760946B2 (en) 2012-05-22 2012-05-22 Method and apparatus for memory access delay training
PCT/US2013/042281 WO2013177315A1 (fr) 2012-05-22 2013-05-22 Procédé et appareil d'apprentissage de retard d'accès mémoire

Publications (1)

Publication Number Publication Date
IN2014DN10277A true IN2014DN10277A (fr) 2015-08-07

Family

ID=48614140

Family Applications (1)

Application Number Title Priority Date Filing Date
IN10277DEN2014 IN2014DN10277A (fr) 2012-05-22 2013-05-22

Country Status (7)

Country Link
US (1) US8760946B2 (fr)
EP (1) EP2852898B1 (fr)
JP (1) JP5819027B2 (fr)
KR (1) KR101549648B1 (fr)
CN (1) CN104335197B (fr)
IN (1) IN2014DN10277A (fr)
WO (1) WO2013177315A1 (fr)

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US9607714B2 (en) 2012-12-26 2017-03-28 Nvidia Corporation Hardware command training for memory using write leveling mechanism
US9824772B2 (en) * 2012-12-26 2017-11-21 Nvidia Corporation Hardware chip select training for memory using read commands
US9378169B2 (en) 2012-12-31 2016-06-28 Nvidia Corporation Method and system for changing bus direction in memory systems
US9190129B2 (en) * 2013-05-31 2015-11-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Continuous tuning of preamble release timing in a double data-rate memory device interface
US9478268B2 (en) * 2014-06-12 2016-10-25 Qualcomm Incorporated Distributed clock synchronization
KR20160147517A (ko) 2015-06-15 2016-12-23 에스케이하이닉스 주식회사 반도체시스템
KR102472123B1 (ko) 2016-03-16 2022-11-30 에스케이하이닉스 주식회사 반도체 시스템 및 그의 동작 방법
US10331195B2 (en) * 2016-06-06 2019-06-25 Qualcomm Incorporated Power and performance aware memory-controller voting mechanism
US10103837B2 (en) 2016-06-23 2018-10-16 Advanced Micro Devices, Inc. Asynchronous feedback training
US10749756B2 (en) 2016-06-24 2020-08-18 Advanced Micro Devices, Inc. Channel training using a replica lane
KR102536657B1 (ko) * 2016-07-12 2023-05-30 에스케이하이닉스 주식회사 반도체 장치 및 반도체 시스템
US10311236B2 (en) 2016-11-22 2019-06-04 Advanced Micro Devices, Inc. Secure system memory training
KR102649888B1 (ko) 2016-11-29 2024-03-22 에스케이하이닉스 주식회사 트레이닝 장치 및 이를 포함하는 반도체 시스템
KR102671708B1 (ko) * 2016-12-16 2024-06-04 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
KR102760070B1 (ko) * 2016-12-16 2025-01-31 에스케이하이닉스 주식회사 메모리 시스템 및 이의 동작 방법
JP6890055B2 (ja) * 2017-06-30 2021-06-18 ルネサスエレクトロニクス株式会社 半導体装置
US10545866B1 (en) * 2017-06-30 2020-01-28 Cadence Design Systems, Inc. Method and system for efficient re-determination of a data valid window
KR102273191B1 (ko) 2017-09-08 2021-07-06 삼성전자주식회사 스토리지 장치 및 그것의 데이터 트레이닝 방법
KR102447499B1 (ko) 2017-10-19 2022-09-26 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 동작 방법
CN108922570B (zh) * 2018-07-13 2020-11-13 豪威科技(上海)有限公司 读dqs信号的相位偏移检测方法、训练方法、电路及系统
JP2020046918A (ja) * 2018-09-19 2020-03-26 キオクシア株式会社 記憶装置及び制御方法
KR102691395B1 (ko) * 2018-12-20 2024-08-05 에스케이하이닉스 주식회사 메모리 시스템, 메모리 시스템의 동작 방법 및 메모리 콘트롤러
US10622982B1 (en) * 2019-01-10 2020-04-14 Western Digital Technologies, Inc. Measurement, calibration and tuning of memory bus duty cycle
CN113450852B (zh) * 2020-03-25 2022-04-12 长鑫存储技术有限公司 半导体存储器的训练方法及相关设备
KR102866520B1 (ko) 2020-05-06 2025-10-01 삼성전자주식회사 저장 장치 및 그것의 리트레이닝 방법
JP2022146543A (ja) * 2021-03-22 2022-10-05 キオクシア株式会社 半導体記憶装置、メモリシステム、および方法
JP7384543B2 (ja) * 2021-04-19 2023-11-21 ▲騰▼▲訊▼科技(深▲セン▼)有限公司 クロック同期システム、信号同期制御方法、記憶媒体及びコンピュータプログラム
US11967960B2 (en) * 2021-07-30 2024-04-23 Advanced Micro Devices, Inc. Methods and apparatus for synchronizing data transfers across clock domains using heads-up indications
US12068021B2 (en) * 2021-12-28 2024-08-20 Micron Technology, Inc. Low power clock injection during idle mode operations
US12272423B2 (en) 2022-05-25 2025-04-08 Samsung Electronics Co., Ltd. Methods of operating a near memory processing-dual in-line memory module (NMP-DIMM) for performing a read operation and an adaptive latency module and a system thereof
US12504909B2 (en) 2022-09-28 2025-12-23 Advanced Micro Devices, Inc. Memory power performance state optimization during image display
CN116501268B (zh) * 2023-06-28 2024-02-27 牛芯半导体(深圳)有限公司 应用于ddr phy的数据读取方法

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KR100543910B1 (ko) * 2003-05-30 2006-01-23 주식회사 하이닉스반도체 디지털 지연고정루프 및 그의 제어 방법
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KR100605588B1 (ko) * 2004-03-05 2006-07-28 주식회사 하이닉스반도체 반도체 기억 소자에서의 지연 고정 루프 및 그의 클럭록킹 방법
US7543172B2 (en) 2004-12-21 2009-06-02 Rambus Inc. Strobe masking in a signaling system having multiple clock domains
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US7924637B2 (en) 2008-03-31 2011-04-12 Advanced Micro Devices, Inc. Method for training dynamic random access memory (DRAM) controller timing delays
KR101040242B1 (ko) * 2008-10-13 2011-06-09 주식회사 하이닉스반도체 데이터 스트로브 신호 생성장치 및 이를 이용하는 반도체 메모리 장치
US8385144B2 (en) 2011-02-25 2013-02-26 Lsi Corporation Utilizing two algorithms to determine a delay value for training DDR3 memory
JP5733126B2 (ja) * 2011-09-15 2015-06-10 富士通セミコンダクター株式会社 メモリインタフェース回路及びタイミング調整方法

Also Published As

Publication number Publication date
CN104335197A (zh) 2015-02-04
KR20140147898A (ko) 2014-12-30
US20130315014A1 (en) 2013-11-28
WO2013177315A1 (fr) 2013-11-28
CN104335197B (zh) 2017-04-19
JP2015520902A (ja) 2015-07-23
JP5819027B2 (ja) 2015-11-18
US8760946B2 (en) 2014-06-24
EP2852898A1 (fr) 2015-04-01
KR101549648B1 (ko) 2015-09-03
EP2852898B1 (fr) 2017-08-02

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