[go: up one dir, main page]

IN2012DN02314A - - Google Patents

Download PDF

Info

Publication number
IN2012DN02314A
IN2012DN02314A IN2314DEN2012A IN2012DN02314A IN 2012DN02314 A IN2012DN02314 A IN 2012DN02314A IN 2314DEN2012 A IN2314DEN2012 A IN 2314DEN2012A IN 2012DN02314 A IN2012DN02314 A IN 2012DN02314A
Authority
IN
India
Prior art keywords
thin film
baking
thickness
dielectric thin
carried out
Prior art date
Application number
Inventor
Hideaki Sakurai
Toshiaki Watanabe
Nobuyuki Soyama
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2012DN02314A publication Critical patent/IN2012DN02314A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/624—Sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/003—Titanates
    • C01G23/006—Alkaline earth titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
    • C04B35/4686—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on phases other than BaTiO3 perovskite phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/441—Alkoxides, e.g. methoxide, tert-butoxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6562—Heating rate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

In this process of forming a dielectric thin film, when a dielectric thin film represented by Ba1-xSrxTiyO3 (0.2 < x < 0.6 and 0.9 < y < 1.1) is formed by a sol-gel method, the process from coating to baking is carried out 2 to 9 times, the thickness of the thin film formed after the initial baking is 20 nm to 80 nm, the thickness of each thin film formed after the second baking and beyond is 20 nm to less than 200 nm, each baking from the first time to the second to ninth times is carried out by heating to a prescribed temperature within the range of 500°C to 800°C at a heating rate of 1°C to 50°C/minute in an atmosphere at atmospheric pressure, and the total thickness of the dielectric thin film is 100 nm to 600 nm.
IN2314DEN2012 2009-09-02 2010-09-02 IN2012DN02314A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009202474 2009-09-02
PCT/JP2010/065059 WO2011027833A1 (en) 2009-09-02 2010-09-02 Method for forming dielectric thin film, and thin film capacitor comprising the dielectric thin film

Publications (1)

Publication Number Publication Date
IN2012DN02314A true IN2012DN02314A (en) 2015-08-21

Family

ID=43649367

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2314DEN2012 IN2012DN02314A (en) 2009-09-02 2010-09-02

Country Status (7)

Country Link
US (1) US8891227B2 (en)
EP (1) EP2474505B1 (en)
JP (1) JP5617441B2 (en)
KR (1) KR101759361B1 (en)
CN (1) CN102482115A (en)
IN (1) IN2012DN02314A (en)
WO (1) WO2011027833A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101452186B1 (en) * 2012-12-26 2014-10-21 주식회사 누리비스타 Paste for internal electrode and multi-layer ceramic capacitor using the same
JP2014144881A (en) * 2013-01-28 2014-08-14 Mitsubishi Materials Corp Dielectric thin film-forming composition and method of forming dielectric thin film using the same
CN105006362B (en) * 2015-07-28 2018-06-19 桂林电子科技大学 A kind of thin film capacitor preparation method of peelable substrate
JP6665673B2 (en) * 2016-05-12 2020-03-13 三菱マテリアル株式会社 Manufacturing method of ferroelectric thin film
KR101813374B1 (en) * 2016-05-13 2017-12-28 삼성전기주식회사 Thin film capacitor and manufacturing method of the same
US10479732B2 (en) 2017-03-31 2019-11-19 Tdk Corporation Oxynitride thin film and capacitance element
HUE062794T2 (en) * 2018-07-30 2023-12-28 Digital Concepts Company Ltd Controllable capacitor and method for controlling and making such capacitor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236404A (en) 1984-05-10 1985-11-25 日本曹達株式会社 Method of producing thin film ferrodielectric material
JPH01308801A (en) 1988-06-08 1989-12-13 Murata Mfg Co Ltd Production of thin film of dielectric material
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
US6174564B1 (en) * 1991-12-13 2001-01-16 Symetrix Corporation Method of making metal polyoxyalkylated precursor solutions
JP3007795B2 (en) * 1994-06-16 2000-02-07 シャープ株式会社 Method for producing composite metal oxide dielectric thin film
JP3178303B2 (en) * 1995-06-23 2001-06-18 三菱マテリアル株式会社 Composition for forming Ba1-xSrxTiyO3 thin film and method for forming Ba1-xSrxTiyO3 thin film
JP3446461B2 (en) * 1995-06-09 2003-09-16 三菱マテリアル株式会社 Composition for forming Ba1-xSrxTiyO3 thin film, method for forming Ba1-xSrxTiyO3 thin film, and method for manufacturing thin-film capacitor
KR100406665B1 (en) * 1995-06-09 2004-03-26 미쓰비시 마테리알 가부시키가이샤 Compositions for forming Ba1-xSrxTiyO3 thin films and methods for forming Ba1-xSrxTiyO3 thin films
JPH0978249A (en) 1995-09-14 1997-03-25 Fujitsu Ltd Method for producing dielectric thin film
CN1049644C (en) * 1997-03-21 2000-02-23 中国科学院上海硅酸盐研究所 Process of preparing strontium-barium titanate film by using water as solvent for precursor solution
JP3599558B2 (en) * 1998-03-10 2004-12-08 シャープ株式会社 Method of manufacturing variable capacitance element for high frequency and variable capacitance element for high frequency
JP4048650B2 (en) * 1999-06-07 2008-02-20 三菱マテリアル株式会社 Raw material solution for forming perovskite oxide thin films
US6803134B1 (en) 2002-05-31 2004-10-12 The United States Of America As Represented By The Secretary Of The Army Paraelectric thin film material and method statement of government interest
US20080171176A1 (en) 2004-03-15 2008-07-17 Energenius, Inc. Thin Film Ferroelectric Microwave Components and Devices on Flexible Metal Foil Substrates
JP3958343B2 (en) 2005-04-28 2007-08-15 三井金属鉱業株式会社 Method for forming oxide dielectric layer and capacitor layer forming material having oxide dielectric layer obtained by the method
EP1887843A1 (en) * 2005-04-28 2008-02-13 Mitsui Mining & Smelting Co., Ltd. Method for oxide dielectric layer formation, and capacitor layer forming material comprising oxide dielectric layer formed by said formation method
JP2007019432A (en) * 2005-07-11 2007-01-25 Tokyo Ohka Kogyo Co Ltd Paraelectric film and its forming method
JP4907266B2 (en) * 2006-08-25 2012-03-28 太陽誘電株式会社 Tunable capacitor
JP2009202474A (en) 2008-02-28 2009-09-10 Toshiba Tec Corp Inkjet recording device

Also Published As

Publication number Publication date
WO2011027833A1 (en) 2011-03-10
CN102482115A (en) 2012-05-30
EP2474505B1 (en) 2016-07-27
JP5617441B2 (en) 2014-11-05
KR101759361B1 (en) 2017-07-18
EP2474505A4 (en) 2013-03-20
JP2011073960A (en) 2011-04-14
EP2474505A1 (en) 2012-07-11
KR20120059596A (en) 2012-06-08
US8891227B2 (en) 2014-11-18
US20120224297A1 (en) 2012-09-06

Similar Documents

Publication Publication Date Title
IN2012DN02314A (en)
MX392387B (en) Process for forming a shaped film product
WO2007084558A3 (en) Method of producing particles by physical vapor deposition in an ionic liquid
WO2015057552A3 (en) Ion exchange process and chemically strengthened glass substrates resulting therefrom
WO2014124178A3 (en) Coating and curing apparatus and methods
WO2011159922A3 (en) Graphene films and methods of making thereof
WO2010023853A3 (en) Manufacturing method for glass substrate with thin film
TN2011000458A1 (en) Thin film coating and method of making of making the same
WO2010077067A3 (en) Method for preparing metallic thin film
WO2011065796A3 (en) Preparation method for anti-glare glass
WO2012064050A3 (en) Method for manufacturing a group iii nitride substrate using a chemical lift-off process
WO2014085315A3 (en) Method for forming a barrier layer
WO2011092017A8 (en) Method for producing a coated item by means of texture etching
WO2010111311A3 (en) New dielectric oxide films and method for making same
WO2018008985A3 (en) Production method for and use of polymer thin-film culture plate for production method for and application of cell sheet
WO2011027115A3 (en) Trans parent electrically conducting oxides
EP2647039A4 (en) Coating liquid for forming metal oxide thin film, metal oxide thin film, field effect transistor, and method for producing the field effect transistor
JP2012091353A5 (en)
GB201106553D0 (en) Mthod for coating substrates
WO2008096871A1 (en) Photocatalyst thin film, method for forming photocatalyst thin film, and photocatalyst thin film coated product
PH12012502133A1 (en) Instant noodles and method of producing the same
WO2011107094A3 (en) Solar cell having dielectric back reflective coating and method for the production thereof
WO2011160814A3 (en) Method for creating a passivated boron-doped region, especially during production of a solar cell, and solar cell with passivated boron-diffused region
RU2015101144A (en) INSULATING COATING FOR GLASS CONTAINERS
WO2013057065A3 (en) Ceramic product for use as a target